JP6737620B2 - 有機el表示装置及び有機el表示装置の製造方法 - Google Patents
有機el表示装置及び有機el表示装置の製造方法 Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims description 10
- 238000000034 method Methods 0.000 title description 10
- 239000004065 semiconductor Substances 0.000 claims description 60
- 150000002500 ions Chemical class 0.000 claims description 37
- 239000010408 film Substances 0.000 description 101
- 239000010410 layer Substances 0.000 description 44
- 239000011229 interlayer Substances 0.000 description 22
- 239000000758 substrate Substances 0.000 description 16
- 239000012535 impurity Substances 0.000 description 10
- 239000003990 capacitor Substances 0.000 description 8
- 230000005669 field effect Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
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- 230000005684 electric field Effects 0.000 description 5
- 238000012986 modification Methods 0.000 description 5
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- 238000007789 sealing Methods 0.000 description 5
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- 238000005468 ion implantation Methods 0.000 description 4
- 230000001681 protective effect Effects 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000005525 hole transport Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
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Description
1の領域414と第2の領域416のうち、第2の領域416とは平面視で重なるような
領域を有し、第1の領域414とは重なる領域を有さないように形成される。
Claims (3)
- 複数の画素を有し、前記各画素に有機EL素子に流す電流を制御するトランジスタを有する有機EL表示装置であって、
前記トランジスタは、
一方が前記有機EL素子と電気的に接続され、他方が前記有機EL表示装置の外部から電源が供給されるドレイン電極及びソース電極と、
前記ソース電極と前記ドレイン電極の間に形成された第1のゲート電極と、
前記第1のゲート電極の下層側に形成された半導体膜と、を有し、
前記半導体膜における、前記第1のゲート電極と前記ドレイン電極または前記ソース電極の間の領域の一方の第1の領域は、n型イオンが高い濃度で注入され、他の一方の第2の領域は、n型イオンが低い濃度で注入され、
前記トランジスタは、前記第1のゲート電極上に絶縁層を介して第2のゲート電極を備え、
前記第2のゲート電極は、断面視で、前記ソース電極側から前記ドレイン電極側にかけて前記第1のゲート電極を覆うように連続的に設けられる、
ことを特徴とする有機EL表示装置。 - 複数の画素を有し、前記各画素に有機EL素子に流す電流を制御するトランジスタを有する有機EL表示装置であって、
前記トランジスタは、
一方が前記有機EL素子と電気的に接続され、他方が前記有機EL表示装置の外部から電源が供給されるドレイン電極及びソース電極と、
前記ソース電極と前記ドレイン電極の間に形成された第1のゲート電極と、
前記第1のゲート電極の下層側に形成された半導体膜と、を有し、
前記半導体膜における、前記第1のゲート電極と前記ドレイン電極または前記ソース電極の間の領域の一方の第1の領域は、n型イオンが高い濃度で注入され、他の一方の第2の領域は、n型イオンが低い濃度で注入され、
前記第1のゲート電極上に第1絶縁層を介して第2のゲート電極を備え、
前記ドレイン電極および前記ソース電極は、前記第2のゲート電極上の第2絶縁層に設けられたコンタクトホールを介して前記半導体膜と電気的に接続する、
ことを特徴とする有機EL表示装置。 - 複数の画素を有し、前記各画素に有機EL素子に流す電流を制御するトランジスタを有する有機EL表示装置の製造方法であって、
前記トランジスタに含まれる半導体膜を形成する工程と、
前記半導体膜の上層側に、前記半導体膜の中央部に第1のゲート電極を形成する工程と、
前記第1のゲート電極をマスクとして、前記半導体膜にn型イオンを注入する工程と、
前記半導体膜と前記第1のゲート電極を覆うように絶縁膜を形成する工程と、
前記絶縁膜の上層側に、前記半導体膜と電気的に接続するドレイン電極とソース電極を形成する工程と、
前記絶縁膜の上層側に、前記第1のゲート電極と前記ドレイン電極または前記ソース電極の間の領域の一方のみと重なるように第2のゲート電極を形成する工程と、
前記ドレイン電極と前記ソース電極を形成する前に、前記第2のゲート電極をマスクとして、前記半導体膜にn型イオンを注入する工程と、
を含むことを特徴とする製造方法。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016075394A JP6737620B2 (ja) | 2016-04-04 | 2016-04-04 | 有機el表示装置及び有機el表示装置の製造方法 |
US15/468,939 US20170287998A1 (en) | 2016-04-04 | 2017-03-24 | Organic el display device and method of manufacturing an organic el display device |
CN201710198483.4A CN107275409B (zh) | 2016-04-04 | 2017-03-29 | 有机el显示装置和有机el显示装置的制造方法 |
KR1020170040596A KR101944610B1 (ko) | 2016-04-04 | 2017-03-30 | 유기 el 표시 장치 및 유기 el 표시 장치의 제조 방법 |
TW106110690A TWI638581B (zh) | 2016-04-04 | 2017-03-30 | Organic EL display device and method of manufacturing organic EL display device |
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JPH0590586A (ja) * | 1991-09-30 | 1993-04-09 | Nec Corp | 薄膜トランジスタ |
JP3358526B2 (ja) * | 1998-02-18 | 2002-12-24 | 日本電気株式会社 | 高耐圧薄膜トランジスタの駆動方法 |
US6512504B1 (en) * | 1999-04-27 | 2003-01-28 | Semiconductor Energy Laborayory Co., Ltd. | Electronic device and electronic apparatus |
US6384427B1 (en) * | 1999-10-29 | 2002-05-07 | Semiconductor Energy Laboratory Co., Ltd. | Electronic device |
US6646287B1 (en) * | 1999-11-19 | 2003-11-11 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device with tapered gate and insulating film |
US7223643B2 (en) * | 2000-08-11 | 2007-05-29 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a semiconductor device |
JP5177923B2 (ja) * | 2001-06-29 | 2013-04-10 | 株式会社半導体エネルギー研究所 | 半導体装置および電子機器 |
JP2004095671A (ja) * | 2002-07-10 | 2004-03-25 | Seiko Epson Corp | 薄膜トランジスタ、スイッチング回路、アクティブ素子基板、電気光学装置、電子機器、サーマルヘッド、液滴吐出ヘッド、印刷装置、薄膜トランジスタ駆動発光表示装置 |
US6963083B2 (en) * | 2003-06-30 | 2005-11-08 | Lg.Philips Lcd Co., Ltd. | Liquid crystal display device having polycrystalline TFT and fabricating method thereof |
KR100686337B1 (ko) * | 2003-11-25 | 2007-02-22 | 삼성에스디아이 주식회사 | 박막 트랜지스터, 이의 제조 방법 및 이를 사용하는 평판표시장치 |
WO2007011061A1 (en) * | 2005-07-22 | 2007-01-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
JP2007273919A (ja) * | 2006-03-31 | 2007-10-18 | Nec Corp | 半導体装置及びその製造方法 |
JP2008027976A (ja) * | 2006-07-18 | 2008-02-07 | Mitsubishi Electric Corp | 薄膜トランジスタアレイ基板、その製造方法、及び表示装置 |
WO2008029544A1 (en) * | 2006-09-08 | 2008-03-13 | Sharp Kabushiki Kaisha | Semiconductor device, method for fabricating the same and electronic device |
JP2010073920A (ja) * | 2008-09-19 | 2010-04-02 | Seiko Epson Corp | 半導体装置の製造方法 |
KR101889918B1 (ko) * | 2010-12-14 | 2018-09-21 | 삼성디스플레이 주식회사 | 유기 발광 디스플레이 장치 및 이의 제조 방법 |
KR20120140474A (ko) * | 2011-06-21 | 2012-12-31 | 삼성디스플레이 주식회사 | 유기 발광 디스플레이 장치와, 이의 제조 방법 |
WO2013002189A1 (ja) * | 2011-06-30 | 2013-01-03 | シャープ株式会社 | バッファ回路および表示装置 |
KR101947019B1 (ko) * | 2012-10-26 | 2019-02-13 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 및 그 제조 방법 |
CN104681628A (zh) * | 2015-03-17 | 2015-06-03 | 京东方科技集团股份有限公司 | 多晶硅薄膜晶体管和阵列基板及制造方法与一种显示装置 |
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KR20170114945A (ko) | 2017-10-16 |
TW201742506A (zh) | 2017-12-01 |
CN107275409A (zh) | 2017-10-20 |
JP2017188535A (ja) | 2017-10-12 |
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CN107275409B (zh) | 2021-02-05 |
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