CN107275409A - 有机el显示装置和有机el显示装置的制造方法 - Google Patents

有机el显示装置和有机el显示装置的制造方法 Download PDF

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CN107275409A
CN107275409A CN201710198483.4A CN201710198483A CN107275409A CN 107275409 A CN107275409 A CN 107275409A CN 201710198483 A CN201710198483 A CN 201710198483A CN 107275409 A CN107275409 A CN 107275409A
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丸山哲
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Japan Display Central Inc
Japan Display Inc
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Abstract

本发明提供有机EL显示装置和该有机EL显示装置的制造方法，不导致过度的亮度降低和消耗电力的增加就可改善每个像素的晶体管特性不均。本发明的有机EL显示装置具有多个像素，在上述各像素中具有控制流过有机EL元件的电流的晶体管，上述晶体管包括：一方与上述有机EL元件电连接、另一方被从上述有机EL显示装置的外部供给电源的漏电极和源电极；形成在上述源电极与上述漏电极之间的第1栅电极；和形成在上述第1栅电极的下层侧的半导体膜，上述半导体膜中的、上述栅电极与上述漏电极或上述源电极之间的区域的一方的第1区域被以高浓度注入n型离子，另一方的第2区域被以低浓度注入n型离子。

Description

有机EL显示装置和有机EL显示装置的制造方法
技术领域
本发明涉及有机EL显示装置和有机EL显示装置的制造方法。
背景技术
近年来，使用了被称为有机发光二极管(OLED：Organic Light Emitting Diode)的自发光体(以下，称为有机EL元件)的有机EL显示装置正在实用化。有机EL显示装置使用设于各像素的场效应晶体管，控制流过各像素的有机EL元件的电流，由此进行图像显示。
场效应晶体管具有与向栅电极施加的电压相对应的源电极和漏电极间的电流放大作用，但是，当在漏电极的附近产生强电场时，产生下述那样的翘曲现象(kinkphenomenon)。即，在漏电极的附近产生强电场时，因该强电场，从源电极流向漏电极的电子被加速，加速后的电子与晶格的碰撞而产生载流子(碰撞电离现象)。通过该载流子，场效应晶体管不仅具有单纯的电流放大作用，还具有包含急剧的电流变化的电压电流特性(翘曲现象)。
在此，使用图7说明翘曲现象。例如，图7是表示场效应晶体管的电压电流特性的图，横轴表示栅电极的电压(Vd)，纵轴表示源极与漏极间的电流(Id)。如图7的部分700所示，在产生了翘曲现象的情况下，场效应晶体管具有Vd电压高于一定电压时Id急剧上升的电压电流特性。
并且，基于翘曲现象的场效应晶体管的特性变化根据像素的不同而存在很大偏差，所以，产生像素间的亮度不均、横线、纵线等显示不良。
于是，例如专利文献1公开了如下内容：在具有多栅极结构的TFT(Thin FilmTransistor：薄膜晶体管)中，在2个沟道区域之间设置将n型离子低浓度地注入的低浓度杂质区域(以下称为LDD区域：Lightly Doped Drain)和高浓度杂质区域，通过缓和漏电极与源电极间的电场的变化，来抑制翘曲现象的产生。
现有技术文献
专利文献
专利文献1：日本特开2014-44439号公报
发明内容
如专利文献1那样，在LDD区域与高浓度杂质区域邻接的结构中，LDD区域与高浓度杂质区域的边界位置没有在每个像素中一致的情况下，翘曲现象的减轻效果因像素而不同，有可能残存显示不良。
另外，为了抑制LDD区域与高浓度杂质区域的边界位置的不均的产生，也考虑对相当于专利文献1的LDD区域的区域也高浓度地注入杂质的结构，但是这会导致晶体管的电阻增加，从而产生消耗电力的增加和亮度的下降。
本发明是鉴于上述技术问题而完成的，其目的在于提供一种不导致过度的亮度降低和消耗电力的增加就改善了每个像素的晶体管特性不均的有机EL显示装置和该有机EL显示装置的制造方法。
本发明的一个方面是一种有机EL显示装置，具有多个像素，在上述各像素中具有控制流过有机EL元件的电流的晶体管，其特征在于，上述晶体管包括：一方与上述有机EL元件电连接、另一方被从上述有机EL显示装置的外部供给电源的漏电极和源电极；形成在上述源电极和上述漏电极之间的第1栅电极；和形成在上述第1栅电极的下层侧的半导体膜，上述半导体膜的、上述第1栅电极与上述漏电极或上述源电极之间的区域的一方的第1区域被以高浓度注入n型离子，另一方的第2区域被以低浓度注入n型离子。
另外，本发明的另一个方面提供一种有机EL显示装置的制造方法，上述有机EL显示装置具有多个像素，在上述各像素中具有控制流过有机EL元件的电流的晶体管，其特征在于，上述有机EL显示装置的制造方法包括：形成包含于上述晶体管的半导体膜的步骤；在上述半导体膜的上层侧，在上述半导体膜的中央部形成第1栅电极的步骤；以上述第1栅电极为掩模，对上述半导体膜注入n型离子的步骤；以覆盖上述半导体膜和上述第1栅电极的方式形成绝缘膜的步骤；在上述绝缘膜的上层侧，以仅与上述半导体膜中的、上述第1栅电极与上述漏电极侧或上述源电极之间的区域中的一方重合的方式形成第2栅电极的步骤；和以上述第2栅电极为掩模，对上述半导体膜注入n型离子的步骤。
附图说明
图1是示意地表示本发明的实施方式的有机EL显示装置的图。
图2是表示有机EL面板的概略的图。
图3是表示像素和控制电路的概略的图。
图4是表示驱动晶体管的平面图的图。
图5是表示驱动晶体管附近的TFT基板的截面的图。
图6是用于说明有机EL显示装置的制造步骤的流程图。
图7是用于说明翘曲现象的图。
附图标记说明
100有机EL显示装置；110上框架；120下框架；200有机EL面板；202TFT基板；204保护膜；206驱动IC；208像素；210显示区域；300驱动晶体管；302发光二极管；304电源布线；306阴极布线；308电容器；310定时控制晶体管；312定时控制布线；314灰度信号布线；316定时控制电路；318灰度控制电路；402源电极；404漏电极；406第1栅电极；408半导体膜；410第2栅电极；412接触孔；414第1区域；416第2区域；500基板；502基底膜；504栅极绝缘膜；506第1层间绝缘膜；508第2层间绝缘膜；510第3层间绝缘膜；512平坦化膜；514阳极电极；516肋；518发光层；520阴极电极；522封固膜；700产生翘曲现象的区域
具体实施方式
以下，参照附图说明本发明的各实施方式。此外，公开不过是一个例子，对本领域技术人员而言，能够容易想到的具有发明的主旨的适当变更当然包含于本发明的范围。另外，为了使说明更加明确，存在与实际的情况相比示意地表示附图各部分的宽度、厚度、形状等的情况，但是终究是一个例子，不限定本发明的解释。另外，在本说明书和各附图中，对与在前面的附图已说明了的要素相同的要素，标注相同的附图标记，适当省略详细的说明。
图1是表示本发明的实施方式的有机EL显示装置100的概略的图。如图1所示，有机EL显示装置100由以被上框架110和下框架120夹着的方式固定的有机EL面板200构成。
图2是表示图1的有机EL面板200的构成的图。有机EL面板200包括TFT(Thin FilmTransistor：薄膜晶体管)基板202、保护膜204和驱动IC(Integrated Circuit：集成电路)206。
TFT基板202具有呈矩阵状配置在显示区域210的多个像素208。具体来说，例如，TFT基板202具有射出3至4个彼此不同的波长区域的光的多个像素208。各像素208包括由有机EL元件形成的发光层518和控制流向发光层518的电流的驱动晶体管300。发光层518和驱动晶体管300在后文述说。保护膜204是保护TFT基板202的膜，以覆盖显示区域210的表面的方式通过接合剂贴合。
驱动IC206通过控制各像素208的亮度，使显示区域210显示图像。具体来说，例如图3记载所示，通过控制流向设于各像素208的驱动晶体管300的电流，在显示区域210显示图像。
接着，说明像素208和控制像素208发光的定时和亮度的控制电路。如图3所示，像素208包括驱动晶体管300、发光二极管302、电源布线304、阴极布线306、电容器308、定时控制晶体管310、定时控制布线312和灰度信号布线314。另外，有机EL面板200包括定时控制电路316。并且，驱动IC206包括灰度控制电路318。
驱动晶体管300控制流向发光二极管302的电流。具体来说，驱动晶体管300根据电容器308所保持的电压来控制流向发光二极管302的电流的大小，由此控制发光二极管302所发出的亮度。
发光二极管302通过从发光二极管302的阳极端子向阴极端子流过电流而发光。具体来说，发光二极管302通过由驱动晶体管300控制的电流从阳极端子流向阴极端子，而发出与该电流的大小相对应的强度的光。此外，发光二极管302由后述的发光层518构成。
电源布线304将电源供给到驱动晶体管300。具体来说，电源布线304与驱动晶体管300的源电极402或漏电极404的一者电连接。另外，电源布线304对驱动晶体管300的源电极402或漏电极404供给用于驱动驱动晶体管300的电源。
阴极布线306与发光二极管302的阴极端子电连接。此外，阴极布线306与后述的阴极电极520电连接。
电容器308保持与流向发光二极管302的电流的大小相对应的电压。具体来说，电容器308保持从灰度信号布线314经由定时控制晶体管310供给的电压。
定时控制晶体管310控制改变电容器308所保持的电压的定时。具体来说，定时控制晶体管310基于供给到定时控制晶体管310的栅极端子的信号，将灰度信号布线314的电压供给到电容器308。
定时控制布线312与定时控制晶体管310的栅极端子电连接，将从定时控制电路316供给的信号供给到定时控制晶体管310的栅极端子。
灰度信号布线314与定时控制晶体管310的源极端子或漏极端子电连接。另外，灰度信号布线314将从灰度控制电路318供给的电压经由定时控制晶体管310供给到电容器308。
定时控制电路316控制各像素208的发光二极管302发光的定时。具体来说，定时控制电路316生成控制各像素208的发光二极管302发光的定时的信号，并将其供给到各像素208的定时控制布线312。此外，定时控制电路316可以形成在TFT基板202所包含的基板500上，也可以形成在驱动IC206的内部。
灰度控制电路318控制各像素208所包含的发光二极管302发出的亮度。具体来说，灰度控制电路318基于从有机EL显示装置100的外部供给的显示画像，生成与各像素208的亮度相对应的电压，并将其供给到各像素208的灰度信号布线314。此外，灰度控制电路318形成在驱动IC206的内部。
接着，说明驱动晶体管300。图4是表示在俯视时各像素208中设置的驱动晶体管300的概略的图。如图4所示，驱动晶体管300包括源电极402、漏电极404、第1栅电极406、半导体膜408、第2栅电极410。
漏电极404和源电极402中的一方与发光层518电连接，另一方被从有机EL显示装置100的外部施加与显示的画像相对应的电压。具体来说，例如，漏电极404配置在驱动晶体管300的右端部，经由后述的阳极电极514与发光层518电连接。源电极402配置在驱动晶体管300的左侧，被驱动IC206经由灰度信号布线314施加与灰度值对应的电压。此外，漏电极404和源电极402可以调换。
另外，漏电极404经由形成在漏电极404与半导体膜408之间的层的接触孔412而与半导体膜408电连接。同样地，源电极402经由形成在源电极402与半导体膜408之间的层的接触孔412而与半导体膜408电连接。关于该接触孔412使用截面图(图5)在后文述说。
第1栅电极406形成在源电极402和漏电极404之间。具体来说，例如，第1栅电极406在源电极402与漏电极404之间的区域中形成为在俯视时与源电极402和漏电极404的任一者都不重合。另外，第1栅电极406形成为具有在俯视时与第1区域的至少一部分重合的区域。
半导体膜408形成在栅电极的下层侧。具体来说，半导体膜408在第1栅电极406、漏电极404和源电极402的下层侧在从形成有漏电极404的区域到形成有源电极402的区域的范围内形成。
并且，在驱动晶体管300中，半导体膜408中的、作为栅电极与漏电极404或源电极402之间的区域的一方的第1区域414被以高浓度注入n型离子，作为另一方的第2区域416被以低浓度注入n型离子。
具体来说，例如，在作为设置在漏电极404的接触孔412与第1栅电极406之间的区域的第1区域414形成的半导体膜408，为了形成N型半导体而被高浓度地注入磷等杂质(n型离子)。另外，在作为设置在源电极402的接触孔412与第1栅电极406之间的区域的第2区域416形成的半导体膜408，被以比第1区域414低的浓度注入磷等用于形成N型半导体的n型离子。
第2栅电极410形成为与第1栅电极406等电位地连接，具有与第1区域414和第2区域416中的、第2区域416在俯视时重合的区域，不具有与第1区域414重合的区域。
具体来说，例如，第2栅电极410从形成在源电极402的接触孔412附近形成至第1栅电极406的漏电极404侧的端部。另外，第2栅电极410隔着绝缘层形成在第1栅电极406之上。
在使第2栅电极410的电位与第1栅电极406为等电位的情况下，与使第2栅电极410浮置的情况、不设置第2栅电极410的情况相比，缓和源电极402与漏电极404间的电场的强度的效果变高，对翘曲现象的降低发挥效果。
另外，如果在使第2栅电极410浮置的情况下，每个像素208的电位变动变大，无法期待屏蔽效果。
此外，第2栅电极410的源电极402侧的端部优选以不与源电极402短路的程度靠近源电极402。具体来说，优选使该端部尽可能靠近源电极402，由此用第2栅电极410尽可能地将第2区域416覆盖。根据该构成，第1区域414在该第1区域414的整个区域被以高浓度注入n型离子，第2区域416在该第2区域416的整个区域被以低浓度注入n型离子。
接着，使用图5说明驱动晶体管300附近的TFT基板202的截面。如图所示，TFT基板202包括基板500、基底膜502、半导体膜408、栅极绝缘膜504、第1栅电极406、第1层间绝缘膜506、第2层间绝缘膜508、第2栅电极410、第3层间绝缘膜510、漏电极404、源电极402、平坦化膜512、阳极电极514、肋516、发光层518、阴极电极520、封固膜522。
基板500例如由玻璃、可挠性树脂形成。基底膜502例如由绝缘材料在基板500的表面形成为半导体膜408的缓冲层。
半导体膜408在基底膜502的上层形成在形成有驱动晶体管300的区域。具体来说，半导体膜408在基底膜502的上层，并在形成有漏电极404和源电极402的区域之间由非晶硅等半导体材料形成。另外，半导体膜408在第1区域414被以高浓度注入n型离子，在第2区域416被以低浓度注入n型离子。
栅极绝缘膜504以覆盖半导体膜408的方式例如由SiO形成。第1栅电极406在栅极绝缘膜504的上层，形成为与形成有半导体膜408的区域的一部分重合。
第1层间绝缘膜506以覆盖第1栅电极406的方式例如由SiN形成。第2层间绝缘膜508在第1层间绝缘膜506的上层例如由SiO形成。
第2栅电极410形成在第2层间绝缘膜508的上层。具体来说，例如，第2栅电极410在第2层间绝缘膜508的上层，形成为与第1栅电极406和第2区域416重合。在此，第2栅电极410的源电极402侧的端部优选以不与源电极402短路的程度靠近源电极402。另外，第2栅电极410的漏电极404侧的端部不与第1栅电极406重合即可，如图5所示，可以构成为不形成在与第1栅电极406的端部相同的位置。
第3层间绝缘膜510以覆盖第2栅电极410的方式例如由SiO形成。
漏电极404形成在第3层间绝缘膜510的上层。具体来说，例如，漏电极404在第3层间绝缘膜510的上层，形成为与半导体膜408的图面上右侧端部重合。另外，漏电极404经由在形成在漏电极404和半导体膜408之间的层设置的接触孔412，与半导体膜408电连接。
源电极402形成在第3层间绝缘膜510的上层。具体来说，例如，源电极402在第3层间绝缘膜510的上层，形成为与半导体膜408的图面上左侧端部重合。另外，源电极402经由在形成在源电极402和半导体膜408之间的层设置的接触孔412，与半导体膜408电连接。
平坦化膜512形成为覆盖漏电极404和源电极402。具体来说，平坦化膜512形成为将漏电极404、源电极402和形成在漏电极404与源电极402的下层的第3层间绝缘膜510覆盖，通过平坦化膜512使形成在下侧的层导致的层差平坦化。
阳极电极514形成在平坦化膜512的上层。具体来说，阳极电极514形成在平坦化膜512的上层，经由设置在平坦化膜512的接触孔与漏电极404电连接。
肋516形成为覆盖阳极电极514的周缘部。通过该肋516能够防止阳极电极514与阴极电极520的短路。
发光层518形成在阳极电极514的上层侧。具体来说，发光层518通过将空穴注入层、空穴输送层、有机EL元件、电子注入层、电子输送层和上部电极层叠而形成。有机EL元件通过从阳极电极514注入的空穴和从阴极电极520注入的电子再结合而发光。空穴注入层、空穴输送层、电子注入层和电子输送层与现有技术相同，因此省略说明。此外，在本实施方式中，发光层518使用按每个像素208发出不同颜色的光的材料形成。
阴极电极520形成在肋516和发光层518的上层。具体来说，例如阴极电极520由ITO(Indium Tin Oxide：氧化铟锡)等的透明电极形成在肋516和发光层518的上层，通过在其与阳极电极514之间流过电流，使发光层518发光。
封固膜522形成为在阴极电极520的上层覆盖TFT基板202。封固膜522防止水分等成为使有机EL元件劣化的原因的分子进入发光层518。
如上所述，成为如下结构：仅半导体膜408中的、第1栅电极406的源电极402侧和漏电极404侧的区域中的一方与第2栅电极410重合，由此，第1区域414和第2区域416被第1栅电极406分离。而且，在将第1区域414和第2区域416分离形成的基础上，使一方为LDD区域，使另一方为高浓度杂质区域，由此，能够防止在LDD区域和高浓度杂质区域的边界位置产生不均。
并且，在第1区域414的整个区域以高浓度注入n型离子，在第2区域416的整个区域以低浓度注入n型离子，由此，在第1区域414和第2区域416中，能够防止注入n型离子的区域的大小产生不均的情况。由此，能够对每个驱动晶体管300防止因翘曲现象导致的影响的大小产生不均的情况，能够提高显示品质。
此外，为了防止翘曲现象的产生，还考虑增长驱动晶体管300的沟道的长度的方法。但是，近年来，伴随显示装置的高精细化，正在进行驱动晶体管300的狭小化，增长沟道的长度比较困难，所以，在高精细的显示装置中，上述结构特别有效。
另外，在上述中，形成具有第2栅电极410的结构，但是不限于此。只要是将第1区域414和第2区域416分离形成、使一方为LDD区域而使另一方为高浓度杂质区域的结构，则也可以为驱动晶体管300不包含第2栅电极410的结构。
接着，说明上述那样的具有驱动晶体管300的有机EL显示装置100的制造方法。图6是表示该制造方法的流程图。首先，以覆盖基板500的方式形成基底膜502，在基底膜502上形成半导体膜408(S601)。接着，在形成栅极绝缘膜504后，第1栅电极406形成为在栅极绝缘膜504的上层，与形成有半导体膜408的区域的一部分重合(S602)。
接着，进行第1次n型离子的注入(S603)。具体来说，例如，以第1栅电极406为掩模对半导体膜408进行n型离子的注入。即，对半导体膜408的第1区域414和第2区域416注入n型离子。在第1次n型离子的注入完成的时刻，第1区域414和第2区域416中的半导体膜408均成为被注入了低浓度的n型离子的状态。
接着，以覆盖第1栅电极406和栅极绝缘膜504的方式形成第1层间绝缘膜506和第2层间绝缘膜508(S604)。然后，第2栅电极410形成为仅与第1区域414和第2区域416中的、第2区域416重合(S605)。
接着，进行第2次n型离子的注入(S606)。具体来说，例如，以第2栅电极410为掩模对半导体膜408进行n型离子的注入。即，仅对半导体膜408的第1区域414和第2区域416中的、第1区域414注入n型离子。在S606中，将n型离子仅注入第1区域414，由此，第1区域414中的半导体膜408成为被注入了高浓度的n型离子的状态。即，在第2次n型离子的注入完成的时刻，第1区域414为被注入了高浓度的n型离子的区域，第2区域416成为LDD区域。
接着，以覆盖第2栅电极410的方式形成第3层间绝缘膜510(S607)。然后，在从半导体膜408至第3层间绝缘膜510叠层的各层的半导体膜408的两端部形成接触孔412的基础上，以经由该接触孔412与半导体膜408电连接的方式形成漏电极404和源电极402(S608)。
并且，在制造有机EL显示装置100的步骤中，包括形成在图5中说明的平坦化膜512至封固膜522的各层的步骤、夹入上框架和下框架的步骤等，但是，该步骤与现有技术相同，因此省略详细的说明。
如以上那样，使在第1次注入n型离子时使用的掩模与在第2次注入n型离子时使用的掩模不同，由此，第1区域414被注入两次n型离子，第2区域416仅被注入一次n型离子。通过该步骤，能够对第1区域414注入高浓度的n型离子，对第2区域416注入低浓度的n型离子。
在本发明的思想范畴中，对于本领域技术人员而言，能够想到各种变形例和修正例，应了解这些变形例和修正例也属于本发明的范围。例如，本领域技术人员对上述的各实施方式适当进行构成要素的追加、删除或者设计变更而得到的方案、或者进行步骤的追加、省略或者条件变形而得到的方案，只要具备本发明的要旨，也包含于本发明的范围内。

Claims (5)

1.一种有机EL显示装置，具有多个像素，在各所述像素中具有对流过有机EL元件的电流进行控制的晶体管，
所述有机EL显示装置的特征在于，
所述晶体管具有：
漏电极和源电极，所述漏电极和源电极中的一方与所述有机EL元件电连接，另一方被从所述有机EL显示装置的外部供给电源；
形成在所述源电极和所述漏电极之间的第1栅电极；和
形成在所述第1栅电极的下层侧的半导体膜，
所述半导体膜的、所述第1栅电极与所述漏电极或所述源电极之间的区域中的一方的第1区域被以高浓度注入n型离子，另一方的第2区域被以低浓度注入n型离子。
2.如权利要求1所述的有机EL显示装置，其特征在于：
所述第1区域在该第1区域的整个区域中被以高浓度注入n型离子，所述第2区域在该第2区域的整个区域中被以低浓度注入n型离子。
3.如权利要求1所述的有机EL显示装置，其特征在于：
所述晶体管在所述第1栅电极之上隔着绝缘层具备第2栅电极，该第2栅电极具有在俯视时与所述第1栅电极和所述第1区域的至少一部分重合的区域。
4.如权利要求3所述的有机EL显示装置，其特征在于：
所述第2栅电极设置成：具有与所述第1区域和所述第2区域中的、所述第1区域在俯视时重合的区域，不具有与所述第1区域和所述第2区域中的、所述第2区域重合的区域。
5.一种有机EL显示装置的制造方法，所述有机EL显示装置具有多个像素，在各所述像素中具有对流过有机EL元件的电流进行控制的晶体管，
所述有机EL显示装置的制造方法的特征在于，包括：
形成包含于所述晶体管的半导体膜的步骤；
在所述半导体膜的上层侧，在所述半导体膜的中央部形成第1栅电极的步骤；
以所述第1栅电极为掩模，对所述半导体膜注入n型离子的步骤；
以覆盖所述半导体膜和所述第1栅电极的方式形成绝缘膜的步骤；
在所述绝缘膜的上层侧，以仅与所述半导体膜中的、所述第1栅电极与所述漏电极侧或所述源电极之间的区域中的一方重合的方式形成第2栅电极的步骤；和
以所述第2栅电极为掩模，对所述半导体膜注入n型离子的步骤。
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