JP2014517535A - 半導体記憶装置を提供するための技法 - Google Patents
半導体記憶装置を提供するための技法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 58
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- 239000000758 substrate Substances 0.000 claims description 44
- 239000012535 impurity Substances 0.000 claims description 26
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 19
- 229910052710 silicon Inorganic materials 0.000 claims description 19
- 239000010703 silicon Substances 0.000 claims description 19
- 150000004767 nitrides Chemical class 0.000 claims description 10
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- 230000000903 blocking effect Effects 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 3
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- 239000007769 metal material Substances 0.000 description 16
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 8
- 229910052785 arsenic Inorganic materials 0.000 description 8
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 8
- 229910052698 phosphorus Inorganic materials 0.000 description 8
- 239000011574 phosphorus Substances 0.000 description 8
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 6
- 229910052796 boron Inorganic materials 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 238000001514 detection method Methods 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 230000000779 depleting effect Effects 0.000 description 2
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
- G11C16/0416—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and no select transistor, e.g. UV EPROM
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/20—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels
- H10B41/23—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
- H10B41/27—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/10—EEPROM devices comprising charge-trapping gate insulators characterised by the top-view layout
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/20—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels
- H10B43/23—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
- H10B43/27—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
Abstract
【選択図】図1
Description
Claims (28)
- 行および列のアレイで配列される複数のメモリセルであって、各メモリセルが、
ソース線に結合される第1の領域と、
ビット線に結合される第2の領域と、
トンネリング絶縁層を介して少なくとも1本のワード線に容量結合され、前記第1の領域と前記第2の領域との間に配置される本体領域と
を備える、複数のメモリセル
を備える半導体記憶装置。 - 前記第1の領域および前記第2の領域がドナー不純物を添加される、請求項1に記載の半導体記憶装置。
- 前記本体領域がアクセプタ不純物を添加される、請求項1に記載の半導体記憶装置。
- 前記トンネリング絶縁層が、複数の絶縁層または複数の誘電層を備える、請求項1に記載の半導体記憶装置。
- 前記複数の絶縁層または前記複数の誘電層が、熱酸化物層、窒化物層、酸化物層、電荷トラップ窒化物層、および遮断酸化物層の内の少なくとも1つを備える、請求項4に記載の半導体記憶装置。
- 前記複数の絶縁層または前記複数の誘電層が多様な厚さから構成される、請求項5に記載の半導体記憶装置。
- 前記少なくとも1本のワード線が複数の層を備える、請求項1に記載の半導体記憶装置。
- 前記ワード線の前記複数の層が、第2の金属層の厚さの約10分の1の厚さを有する第1のシリコン層を備える、請求項7に記載の半導体記憶装置。
- 前記第1の領域、前記第2の領域、および前記本体領域が連続隣接関係で配置され、P基板によって画定される平面から垂直に延在する、請求項1に記載の半導体記憶装置。
- 前記本体領域が、第1のフローティングゲート領域および第2のフローティングゲート領域を備える、請求項1に記載の半導体記憶装置。
- 前記第1のフローティングゲート領域が前記少なくとも1本のワード線の第1のワード線に容量結合され、前記第2のフローティングゲート領域が前記少なくとも1本のワード線の第2のワード線に容量結合される、請求項10に記載の半導体記憶装置。
- 前記少なくとも1本のワード線が第2の本体領域に容量結合される、請求項1に記載の半導体記憶装置。
- 前記少なくとも1本のワード線が、前記本体領域の第1のフローティングゲート領域および前記第2の本体領域の第2のフローティングゲート領域に容量結合される、請求項12に記載の半導体記憶装置。
- 前記第1の領域が連続平面領域を備える、請求項1に記載の半導体記憶装置。
- 前記第1の領域が、前記連続平面領域に形成される複数の突出部をさらに備える、請求項14に記載の半導体記憶装置。
- 前記第1の領域が細長い連続平面領域を備える、請求項1に記載の半導体記憶装置。
- 前記細長い連続平面領域が前記アレイの列または行を形成する、請求項15に記載の半導体記憶装置。
- 半導体記憶装置にバイアスをかけるための方法であって、
行および列のアレイで配列される複数のメモリセルに複数の電位を印加するステップであって、
前記複数のメモリセルのそれぞれの第1の領域に第1の電位を印加することと、
前記複数のメモリセルのそれぞれの第2の領域に第2の電位を印加することと、
トンネリング絶縁層を介して前記本体領域に容量結合される前記アレイの少なくとも1本のそれぞれのワード線を介して前記複数のメモリセルのそれぞれの本体領域に第3の電位を印加することと
を含む、前記複数のメモリセルに前記複数の電位を印加するステップ
を含む方法。 - P基板を電気的アースに結合することをさらに含む、請求項18に記載の方法。
- 前記第1の電位が、書込み論理低動作を実行するために前記第1の領域に印加される、請求項19に記載の方法。
- 前記本体領域に印加される前記第3の電位が、前記書込み低動作を実行するために、前記本体領域から多数電荷をはじくための負の電位である、請求項20に記載の方法。
- 前記第2の領域に印加される第2の電位および前記本体領域に印加される前記第3の電位が、書込み低動作を実行するためである、請求項19に記載の方法。
- 前記本体領域に印加される前記第3の電位が、前記書込み論理低動作を実行するために前記本体領域の中に少数電荷をトンネルする負の電位である、請求項22に記載の方法。
- 前記第2の領域に印加される前記第2の電位および前記本体領域に印加される前記第3の電位が、書込み論理高動作を実行するために正の電位である、請求項19に記載の方法。
- 前記第2の領域および前記本体領域に印加される前記正の電位が、前記書込み論理高動作を実行するために前記本体領域に多数電荷をトンネルするための帯間トンネリング効果を生じさせる、請求項24に記載の方法。
- 前記第2の領域に印加される前記第2の電位および前記本体領域に印加される前記第3の電位が、書込み論理高動作を実行するためである、請求項19に記載の方法。
- 前記多数電荷が、前記書込み論理高動作を実行するために前記本体領域の中に注入される、請求項26に記載の方法。
- 前記第2の領域に印加される前記第2の電位および前記本体領域に印加される前記第3の電位が、読取り動作を実行するために正の電位である、請求項19に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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US13/153,707 | 2011-06-06 | ||
US13/153,707 US9559216B2 (en) | 2011-06-06 | 2011-06-06 | Semiconductor memory device and method for biasing same |
PCT/US2012/040891 WO2012170409A2 (en) | 2011-06-06 | 2012-06-05 | Techniques for providing a semiconductor memory device |
Publications (2)
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JP2014517535A true JP2014517535A (ja) | 2014-07-17 |
JP5851595B2 JP5851595B2 (ja) | 2016-02-03 |
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JP2014514550A Active JP5851595B2 (ja) | 2011-06-06 | 2012-06-05 | 半導体記憶装置を提供するための技法 |
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US (1) | US9559216B2 (ja) |
EP (1) | EP2718973A4 (ja) |
JP (1) | JP5851595B2 (ja) |
CN (1) | CN103688357A (ja) |
WO (1) | WO2012170409A2 (ja) |
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JP5851595B2 (ja) | 2016-02-03 |
US20120307568A1 (en) | 2012-12-06 |
EP2718973A4 (en) | 2015-04-15 |
EP2718973A2 (en) | 2014-04-16 |
WO2012170409A3 (en) | 2013-03-14 |
US9559216B2 (en) | 2017-01-31 |
CN103688357A (zh) | 2014-03-26 |
WO2012170409A2 (en) | 2012-12-13 |
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