CN1630024B - 半导体器件及其制造方法 - Google Patents

半导体器件及其制造方法 Download PDF

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Publication number
CN1630024B
CN1630024B CN2004100489599A CN200410048959A CN1630024B CN 1630024 B CN1630024 B CN 1630024B CN 2004100489599 A CN2004100489599 A CN 2004100489599A CN 200410048959 A CN200410048959 A CN 200410048959A CN 1630024 B CN1630024 B CN 1630024B
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silicon film
crystallization
film
semiconductor device
crystal silicon
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Expired - Fee Related
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CN2004100489599A
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Chinese (zh)
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CN1630024A (zh
Inventor
山崎舜平
寺本聪
小山润
尾形靖
早川昌彦
纳光明
大谷久
滨谷敏次
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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    • H—ELECTRICITY
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02686—Pulsed laser beam
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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
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    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02672—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using crystallisation enhancing elements
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28158—Making the insulator
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
    • H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
    • H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
    • H01L21/3226—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering of silicon on insulator
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
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    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0314—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral top-gate TFTs comprising only a single gate
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    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0316—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral bottom-gate TFTs comprising only a single gate
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    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H10D30/6715—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes characterised by the doping profiles, e.g. having lightly-doped source or drain extensions
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6731—Top-gate only TFTs
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H10D30/6745—Polycrystalline or microcrystalline silicon
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
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    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0221—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies
    • H10D86/0223—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials
    • H10D86/0225—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials using crystallisation-promoting species, e.g. using a Ni catalyst
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    • H10D86/201—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
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    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6739—Conductor-insulator-semiconductor electrodes

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  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Recrystallisation Techniques (AREA)
  • Thin Film Transistor (AREA)
CN2004100489599A 1996-01-19 1997-01-19 半导体器件及其制造方法 Expired - Fee Related CN1630024B (zh)

Applications Claiming Priority (24)

Application Number Priority Date Filing Date Title
JP2621096 1996-01-19
JP26210/1996 1996-01-19
JP26210/96 1996-01-19
JP2603796 1996-01-20
JP26037/1996 1996-01-20
JP26037/96 1996-01-20
JP32875/96 1996-01-26
JP32874/96 1996-01-26
JP3287596 1996-01-26
JP3287496 1996-01-26
JP32875/1996 1996-01-26
JP32874/1996 1996-01-26
JP3298196 1996-01-27
JP32981/1996 1996-01-27
JP32981/96 1996-01-27
JP58334/1996 1996-02-20
JP58334/96 1996-02-20
JP5833496 1996-02-20
JP8875996 1996-03-17
JP88759/1996 1996-03-17
JP88759/96 1996-03-17
JP33515296A JP3729955B2 (ja) 1996-01-19 1996-11-29 半導体装置の作製方法
JP335152/1996 1996-11-29
JP335152/96 1996-11-29

Related Parent Applications (1)

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CNB971095159A Division CN1160758C (zh) 1996-01-19 1997-01-19 半导体器件及其制造方法

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CN1630024A CN1630024A (zh) 2005-06-22
CN1630024B true CN1630024B (zh) 2010-04-28

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CNB971095159A Expired - Fee Related CN1160758C (zh) 1996-01-19 1997-01-19 半导体器件及其制造方法

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US (4) US6077731A (enExample)
JP (1) JP3729955B2 (enExample)
KR (1) KR100419550B1 (enExample)
CN (2) CN1630024B (enExample)

Families Citing this family (144)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3255942B2 (ja) * 1991-06-19 2002-02-12 株式会社半導体エネルギー研究所 逆スタガ薄膜トランジスタの作製方法
US6777763B1 (en) 1993-10-01 2004-08-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for fabricating the same
KR100265179B1 (ko) * 1995-03-27 2000-09-15 야마자끼 순페이 반도체장치와 그의 제작방법
JP4056571B2 (ja) 1995-08-02 2008-03-05 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP3645378B2 (ja) 1996-01-19 2005-05-11 株式会社半導体エネルギー研究所 半導体装置の作製方法
US5985740A (en) 1996-01-19 1999-11-16 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device including reduction of a catalyst
JP3645379B2 (ja) 1996-01-19 2005-05-11 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP3729955B2 (ja) * 1996-01-19 2005-12-21 株式会社半導体エネルギー研究所 半導体装置の作製方法
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US6478263B1 (en) 1997-01-17 2002-11-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and its manufacturing method
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US6331457B1 (en) * 1997-01-24 2001-12-18 Semiconductor Energy Laboratory., Ltd. Co. Method for manufacturing a semiconductor thin film
US6180439B1 (en) 1996-01-26 2001-01-30 Semiconductor Energy Laboratory Co., Ltd. Method for fabricating a semiconductor device
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US6100562A (en) 1996-03-17 2000-08-08 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
TW556263B (en) * 1996-07-11 2003-10-01 Semiconductor Energy Lab Semiconductor device and method of manufacturing the same
US8603870B2 (en) 1996-07-11 2013-12-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
US6979882B1 (en) * 1996-07-16 2005-12-27 Semiconductor Energy Laboratory Co., Ltd. Electronic device and method for manufacturing the same
JP3759999B2 (ja) * 1996-07-16 2006-03-29 株式会社半導体エネルギー研究所 半導体装置、液晶表示装置、ｅｌ装置、ｔｖカメラ表示装置、パーソナルコンピュータ、カーナビゲーションシステム、ｔｖプロジェクション装置及びビデオカメラ
US6590230B1 (en) 1996-10-15 2003-07-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
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US6617648B1 (en) * 1998-02-25 2003-09-09 Semiconductor Energy Laboratory Co., Ltd. Projection TV
US7248232B1 (en) 1998-02-25 2007-07-24 Semiconductor Energy Laboratory Co., Ltd. Information processing device
JP3980156B2 (ja) 1998-02-26 2007-09-26 株式会社半導体エネルギー研究所 アクティブマトリクス型表示装置
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US6482684B1 (en) 1998-03-27 2002-11-19 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a TFT with Ge seeded amorphous Si layer
JP4156075B2 (ja) * 1998-04-23 2008-09-24 株式会社半導体エネルギー研究所 画像表示装置
JP2000039628A (ja) 1998-05-16 2000-02-08 Semiconductor Energy Lab Co Ltd 半導体表示装置
JP4223094B2 (ja) 1998-06-12 2009-02-12 株式会社半導体エネルギー研究所 電気光学表示装置
JP2000003875A (ja) 1998-06-12 2000-01-07 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JP2000002872A (ja) 1998-06-16 2000-01-07 Semiconductor Energy Lab Co Ltd 液晶表示装置およびその作製方法
JP2000012864A (ja) 1998-06-22 2000-01-14 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
US7294535B1 (en) 1998-07-15 2007-11-13 Semiconductor Energy Laboratory Co., Ltd. Crystalline semiconductor thin film, method of fabricating the same, semiconductor device, and method of fabricating the same
US7153729B1 (en) 1998-07-15 2006-12-26 Semiconductor Energy Laboratory Co., Ltd. Crystalline semiconductor thin film, method of fabricating the same, semiconductor device, and method of fabricating the same
JP4030193B2 (ja) 1998-07-16 2008-01-09 株式会社半導体エネルギー研究所 半導体装置の作製方法
US6346437B1 (en) * 1998-07-16 2002-02-12 Sharp Laboratories Of America, Inc. Single crystal TFT from continuous transition metal delivery method
JP3592535B2 (ja) 1998-07-16 2004-11-24 株式会社半導体エネルギー研究所 半導体装置の作製方法
US7282398B2 (en) 1998-07-17 2007-10-16 Semiconductor Energy Laboratory Co., Ltd. Crystalline semiconductor thin film, method of fabricating the same, semiconductor device and method of fabricating the same
US7084016B1 (en) 1998-07-17 2006-08-01 Semiconductor Energy Laboratory Co., Ltd. Crystalline semiconductor thin film, method of fabricating the same, semiconductor device, and method of fabricating the same
US6271101B1 (en) 1998-07-29 2001-08-07 Semiconductor Energy Laboratory Co., Ltd. Process for production of SOI substrate and process for production of semiconductor device
US6559036B1 (en) 1998-08-07 2003-05-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
US6294441B1 (en) 1998-08-18 2001-09-25 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
JP4476390B2 (ja) 1998-09-04 2010-06-09 株式会社半導体エネルギー研究所 半導体装置の作製方法
US6656779B1 (en) 1998-10-06 2003-12-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor apparatus having semiconductor circuits made of semiconductor devices, and method of manufacture thereof
US7126161B2 (en) 1998-10-13 2006-10-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having El layer and sealing material
US7022556B1 (en) 1998-11-11 2006-04-04 Semiconductor Energy Laboratory Co., Ltd. Exposure device, exposure method and method of manufacturing semiconductor device
JP4646343B2 (ja) * 1998-11-27 2011-03-09 株式会社半導体エネルギー研究所 半導体装置の作製方法
KR100317620B1 (ko) * 1998-12-19 2002-06-20 구본준, 론 위라하디락사 실리콘박막을결정화하는방법과이를이용한박막트랜지스터제조방법
US6639244B1 (en) 1999-01-11 2003-10-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of fabricating the same
EP1020920B1 (en) 1999-01-11 2010-06-02 Sel Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having a driver TFT and a pixel TFT on a common substrate
US6590229B1 (en) 1999-01-21 2003-07-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and process for production thereof
US6593592B1 (en) 1999-01-29 2003-07-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having thin film transistors
US6576924B1 (en) 1999-02-12 2003-06-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having at least a pixel unit and a driver circuit unit over a same substrate
KR100654927B1 (ko) 1999-03-04 2006-12-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그의 제작방법
JP2000349025A (ja) * 1999-03-26 2000-12-15 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
US6861670B1 (en) 1999-04-01 2005-03-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having multi-layer wiring
US7122835B1 (en) 1999-04-07 2006-10-17 Semiconductor Energy Laboratory Co., Ltd. Electrooptical device and a method of manufacturing the same
US6878968B1 (en) 1999-05-10 2005-04-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR100333361B1 (ko) * 1999-08-21 2002-04-18 박종섭 반도체장치의 제조방법
US7232742B1 (en) 1999-11-26 2007-06-19 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device that includes forming a material with a high tensile stress in contact with a semiconductor film to getter impurities from the semiconductor film
US7060153B2 (en) 2000-01-17 2006-06-13 Semiconductor Energy Laboratory Co., Ltd. Display device and method of manufacturing the same
US6639265B2 (en) 2000-01-26 2003-10-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the semiconductor device
TW494447B (en) 2000-02-01 2002-07-11 Semiconductor Energy Lab Semiconductor device and manufacturing method thereof
JP4986332B2 (ja) * 2000-03-21 2012-07-25 株式会社半導体エネルギー研究所 半導体装置の作製方法
US7045444B2 (en) 2000-12-19 2006-05-16 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device that includes selectively adding a noble gas element
US6858480B2 (en) 2001-01-18 2005-02-22 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device
TWI221645B (en) * 2001-01-19 2004-10-01 Semiconductor Energy Lab Method of manufacturing a semiconductor device
US7115453B2 (en) * 2001-01-29 2006-10-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method of the same
JP2002231627A (ja) 2001-01-30 2002-08-16 Semiconductor Energy Lab Co Ltd 光電変換装置の作製方法
US7141822B2 (en) * 2001-02-09 2006-11-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP4993810B2 (ja) 2001-02-16 2012-08-08 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP5088993B2 (ja) * 2001-02-16 2012-12-05 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4718700B2 (ja) 2001-03-16 2011-07-06 株式会社半導体エネルギー研究所 半導体装置の作製方法
US7052943B2 (en) * 2001-03-16 2006-05-30 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
US6812081B2 (en) * 2001-03-26 2004-11-02 Semiconductor Energy Laboratory Co.,.Ltd. Method of manufacturing semiconductor device
US6809023B2 (en) * 2001-04-06 2004-10-26 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device having uniform crystal grains in a crystalline semiconductor film
US6743700B2 (en) * 2001-06-01 2004-06-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor film, semiconductor device and method of their production
TW558861B (en) * 2001-06-15 2003-10-21 Semiconductor Energy Lab Laser irradiation stage, laser irradiation optical system, laser irradiation apparatus, laser irradiation method, and method of manufacturing semiconductor device
TWI282126B (en) * 2001-08-30 2007-06-01 Semiconductor Energy Lab Method for manufacturing semiconductor device
JP2003224070A (ja) * 2001-11-26 2003-08-08 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
US7078322B2 (en) * 2001-11-29 2006-07-18 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a thin film transistor
DE10159161A1 (de) * 2001-12-01 2003-06-18 Solvay Pharm Gmbh Verfahren zur Gewinnung von Oestrogenen aus Stutenharn
TW200304227A (en) * 2002-03-11 2003-09-16 Sanyo Electric Co Top gate type thin film transistor
TWI288443B (en) * 2002-05-17 2007-10-11 Semiconductor Energy Lab SiN film, semiconductor device, and the manufacturing method thereof
US6861338B2 (en) * 2002-08-22 2005-03-01 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor and method of manufacturing the same
JP2004172389A (ja) * 2002-11-20 2004-06-17 Renesas Technology Corp 半導体装置およびその製造方法
US7374976B2 (en) * 2002-11-22 2008-05-20 Semiconductor Energy Laboratory Co., Ltd. Method for fabricating thin film transistor
JP4175877B2 (ja) 2002-11-29 2008-11-05 株式会社半導体エネルギー研究所 半導体装置及びその作製方法
US7838875B1 (en) 2003-01-22 2010-11-23 Tsang Dean Z Metal transistor device
JP2004281998A (ja) * 2003-01-23 2004-10-07 Seiko Epson Corp トランジスタとその製造方法、電気光学装置、半導体装置並びに電子機器
US6900082B2 (en) * 2003-02-24 2005-05-31 Man Wong, The Hong Kong University Of Science & Technology Methods for forming laterally crystallized polysilicon and devices fabricated therefrom
US7423343B2 (en) * 2003-08-05 2008-09-09 Semiconductor Energy Laboratory Co., Ltd. Wiring board, manufacturing method thereof, semiconductor device and manufacturing method thereof
JP4350465B2 (ja) * 2003-09-05 2009-10-21 三菱電機株式会社 半導体装置の製造方法
US7964925B2 (en) * 2006-10-13 2011-06-21 Hewlett-Packard Development Company, L.P. Photodiode module and apparatus including multiple photodiode modules
KR100560470B1 (ko) * 2003-11-24 2006-03-13 삼성에스디아이 주식회사 다이오드 접속된 트랜지스터의 제조 방법 및 이를 이용한화상 표시 장치
KR100623251B1 (ko) * 2004-02-19 2006-09-18 삼성에스디아이 주식회사 다결정 실리콘 박막의 제조 방법 및 이를 사용하여제조되는 다결정 실리콘을 사용하는 박막 트랜지스터
JP2006019609A (ja) * 2004-07-05 2006-01-19 Hitachi Displays Ltd 画像表示装置
US7648861B2 (en) * 2004-08-03 2010-01-19 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating a semiconductor device including separately forming a second semiconductor film containing an impurity element over the first semiconductor region
US7560789B2 (en) 2005-05-27 2009-07-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US7683429B2 (en) * 2005-05-31 2010-03-23 Semiconductor Energy Laboratory Co., Ltd. Microstructure and manufacturing method of the same
US7642612B2 (en) 2005-06-17 2010-01-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP2007220825A (ja) * 2006-02-15 2007-08-30 Sumco Corp シリコンウェーハの製造方法
JP2008028070A (ja) * 2006-07-20 2008-02-07 Sumco Corp 貼り合わせウェーハの製造方法
DE102006036798B4 (de) * 2006-08-07 2013-08-29 Infineon Technologies Ag Elektronisches Bauteil und Verfahren zum Herstellen
JP2008130596A (ja) * 2006-11-16 2008-06-05 Ihi Corp ガラス基板の熱処理方法及び装置
JP2008182063A (ja) * 2007-01-25 2008-08-07 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
US8420456B2 (en) * 2007-06-12 2013-04-16 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing for thin film transistor
KR100919781B1 (ko) * 2007-07-06 2009-10-01 전자부품연구원 필름형 박막을 위한 다공질 기판의 제조 방법
US7932138B2 (en) * 2007-12-28 2011-04-26 Viatron Technologies Inc. Method for manufacturing thin film transistor
KR101293261B1 (ko) 2009-10-21 2013-08-09 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치 및 표시 장치를 갖는 전자 기기
US20110147817A1 (en) * 2009-12-17 2011-06-23 Infineon Technologies Austria Ag Semiconductor component having an oxide layer
US20120318662A1 (en) 2009-12-24 2012-12-20 Nissan Chemical Industries, Ltd. Method for forming bond between different elements
US8796116B2 (en) 2011-01-31 2014-08-05 Sunedison Semiconductor Limited Methods for reducing the metal content in the device layer of SOI structures and SOI structures produced by such methods
TWI658516B (zh) 2011-03-11 2019-05-01 日商半導體能源研究所股份有限公司 半導體裝置的製造方法
US9196753B2 (en) 2011-04-19 2015-11-24 Micron Technology, Inc. Select devices including a semiconductive stack having a semiconductive material
JP2013149953A (ja) 2011-12-20 2013-08-01 Semiconductor Energy Lab Co Ltd 半導体装置及び半導体装置の作製方法
US9735280B2 (en) 2012-03-02 2017-08-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, method for manufacturing semiconductor device, and method for forming oxide film
JP6320762B2 (ja) * 2014-01-15 2018-05-09 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法
JP6255651B2 (ja) * 2014-03-07 2018-01-10 富士フイルム株式会社 薄膜トランジスタ
CN104022023A (zh) * 2014-06-24 2014-09-03 上海大学 准分子激光辅助醋酸镍溶液金属诱导晶化非晶硅薄膜的方法
KR101676099B1 (ko) * 2014-09-24 2016-11-15 오씨아이 주식회사 Nf3 가스 분리농축 방법, 장치 및 시스템
CN105047539B (zh) * 2015-08-07 2017-08-01 西安电子科技大学 提高SiC MOSFET沟道迁移率的方法
DE102017118975B4 (de) * 2017-08-18 2023-07-27 Infineon Technologies Ag Halbleitervorrichtung mit einem cz-halbleiterkörper und verfahren zum herstellen einer halbleitervorrichtung mit einem cz-halbleiterkörper
CN110354691B (zh) * 2018-03-26 2020-12-18 京东方科技集团股份有限公司 气体筛选膜及其制造方法和面罩
JP7208779B2 (ja) 2018-12-11 2023-01-19 キオクシア株式会社 基板処理装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5147826A (en) * 1990-08-06 1992-09-15 The Pennsylvania Research Corporation Low temperature crystallization and pattering of amorphous silicon films
US5289030A (en) * 1991-03-06 1994-02-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device with oxide layer
US5354697A (en) * 1991-09-23 1994-10-11 U.S. Philips Corporation Implantation method having improved material purity
US5470763A (en) * 1993-09-21 1995-11-28 Nec Corporation Method for manufacturing thin film transistor with short hydrogen passivation time

Family Cites Families (280)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US459610A (en) * 1891-09-15 desroziers
US3389024A (en) 1964-05-12 1968-06-18 Licentia Gmbh Method of forming a semiconductor by diffusion through the use of a cobalt salt
USRE28385E (en) 1968-03-20 1975-04-08 Method of treating semiconductor devices
US3556880A (en) 1968-04-11 1971-01-19 Rca Corp Method of treating semiconductor devices to improve lifetime
US3783049A (en) 1971-03-31 1974-01-01 Trw Inc Method of platinum diffusion
US3890632A (en) 1973-12-03 1975-06-17 Rca Corp Stabilized semiconductor devices and method of making same
US4086020A (en) 1974-06-07 1978-04-25 Hitachi, Ltd. Hydraulic machine
US4174217A (en) 1974-08-02 1979-11-13 Rca Corporation Method for making semiconductor structure
DE2508802A1 (de) 1975-02-28 1976-09-09 Siemens Ag Verfahren zum abscheiden von elementarem silicium
US4059461A (en) 1975-12-10 1977-11-22 Massachusetts Institute Of Technology Method for improving the crystallinity of semiconductor films by laser beam scanning and the products thereof
US4132571A (en) 1977-02-03 1979-01-02 International Business Machines Corporation Growth of polycrystalline semiconductor film with intermetallic nucleating layer
SE7800261L (sv) 1977-02-28 1978-08-29 Rca Corp Sett att tillverka en halvledaranordning
US4226898A (en) 1978-03-16 1980-10-07 Energy Conversion Devices, Inc. Amorphous semiconductors equivalent to crystalline semiconductors produced by a glow discharge process
US4140548A (en) 1978-05-19 1979-02-20 Maruman Integrated Circuits Inc. MOS Semiconductor process utilizing a two-layer oxide forming technique
US4309224A (en) 1978-10-06 1982-01-05 Tokyo Shibaura Denki Kabushiki Kaisha Method for manufacturing a semiconductor device
US4231809A (en) * 1979-05-25 1980-11-04 Bell Telephone Laboratories, Incorporated Method of removing impurity metals from semiconductor devices
DE2932569C2 (de) 1979-08-10 1983-04-07 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zur Reduzierung der Dichte der schnellen Oberflächenzustände bei MOS-Bauelementen
US4300989A (en) 1979-10-03 1981-11-17 Bell Telephone Laboratories, Incorporated Fluorine enhanced plasma growth of native layers on silicon
US4379020A (en) 1980-06-16 1983-04-05 Massachusetts Institute Of Technology Polycrystalline semiconductor processing
US5262350A (en) 1980-06-30 1993-11-16 Semiconductor Energy Laboratory Co., Ltd. Forming a non single crystal semiconductor layer by using an electric current
US4277884A (en) 1980-08-04 1981-07-14 Rca Corporation Method for forming an improved gate member utilizing special masking and oxidation to eliminate projecting points on silicon islands
US4330363A (en) 1980-08-28 1982-05-18 Xerox Corporation Thermal gradient control for enhanced laser induced crystallization of predefined semiconductor areas
US4409724A (en) 1980-11-03 1983-10-18 Texas Instruments Incorporated Method of fabricating display with semiconductor circuits on monolithic structure and flat panel display produced thereby
US4534820A (en) 1981-10-19 1985-08-13 Nippon Telegraph & Telephone Public Corporation Method for manufacturing crystalline film
DE3202484A1 (de) 1982-01-27 1983-08-04 Bayer Ag, 5090 Leverkusen Metallisierte halbleiter und verfahren zu ihrer herstellung
US4466073A (en) 1982-04-26 1984-08-14 The Perkin Elmer Corporation Wafer prealigner using pulsed vacuum spinners
US4481121A (en) 1982-05-17 1984-11-06 Hughes Tool Company Viscosifier for oil base drilling fluids
US4511800A (en) * 1983-03-28 1985-04-16 Rca Corporation Optical reflectance method for determining the surface roughness of materials in semiconductor processing
JPS6045219A (ja) * 1983-08-23 1985-03-11 Toshiba Corp アクテイブマトリクス型表示装置
US4546376A (en) 1983-09-30 1985-10-08 Citizen Watch Co., Ltd. Device for semiconductor integrated circuits
JPS60105216U (ja) 1983-12-23 1985-07-18 日産自動車株式会社 自動車のサスペンシヨン装置
US4544418A (en) 1984-04-16 1985-10-01 Gibbons James F Process for high temperature surface reactions in semiconductor material
US4727044A (en) 1984-05-18 1988-02-23 Semiconductor Energy Laboratory Co., Ltd. Method of making a thin film transistor with laser recrystallized source and drain
JPS6163107U (enExample) 1984-09-29 1986-04-28
JPS6163017U (enExample) 1984-10-01 1986-04-28
EP0178447B1 (en) 1984-10-09 1993-02-17 Fujitsu Limited A manufacturing method of an integrated circuit based on semiconductor-on-insulator technology
JPS61270313A (ja) 1984-11-27 1986-11-29 Sumitomo Special Metals Co Ltd 希土類合金紛末の製造方法
US4735824A (en) 1985-05-31 1988-04-05 Kabushiki Kaisha Toshiba Method of manufacturing an MOS capacitor
US5962869A (en) 1988-09-28 1999-10-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor material and method for forming the same and thin film transistor
JPH05299339A (ja) 1991-03-18 1993-11-12 Semiconductor Energy Lab Co Ltd 半導体材料およびその作製方法
US5296405A (en) 1985-08-02 1994-03-22 Semiconductor Energy Laboratory Co.., Ltd. Method for photo annealing non-single crystalline semiconductor films
US5753542A (en) * 1985-08-02 1998-05-19 Semiconductor Energy Laboratory Co., Ltd. Method for crystallizing semiconductor material without exposing it to air
US4597160A (en) 1985-08-09 1986-07-01 Rca Corporation Method of fabricating a polysilicon transistor with a high carrier mobility
US4634473A (en) 1985-09-09 1987-01-06 Rca Corporation Method for fabricating a radiation hardened oxide having structural damage
DE3689843T2 (de) 1986-03-06 1994-09-01 Toshiba Kawasaki Kk Steuerschaltung einer Flüssigkristallanzeige.
JPS62169356U (enExample) 1986-04-16 1987-10-27
JPH0766425B2 (ja) 1986-05-02 1995-07-19 日本電気株式会社 Ｉｃカ−ドのリ−ダ・ライタ
US4755481A (en) 1986-05-15 1988-07-05 General Electric Company Method of making a silicon-on-insulator transistor
US5221423A (en) 1986-05-20 1993-06-22 Fujitsu Limited Process for cleaning surface of semiconductor substrate
US4911781A (en) 1987-05-05 1990-03-27 The Standard Oil Company VLS Fiber growth process
JPH07114184B2 (ja) 1987-07-27 1995-12-06 日本電信電話株式会社 薄膜形シリコン半導体装置およびその製造方法
JPS6481324A (en) 1987-09-24 1989-03-27 Toshiba Corp Manufacture of semiconductor device
US4959247A (en) 1987-12-14 1990-09-25 Donnelly Corporation Electrochromic coating and method for making same
JPH01187875A (ja) 1988-01-22 1989-07-27 Seiko Epson Corp 半導体素子の製造方法
JP2623276B2 (ja) 1988-01-22 1997-06-25 株式会社日立製作所 薄膜半導体装置の製造方法
JP2638869B2 (ja) 1988-01-22 1997-08-06 セイコーエプソン株式会社 半導体素子の製造方法
JP2730900B2 (ja) 1988-02-15 1998-03-25 三洋電機株式会社 半導体装置の製造方法
US5225355A (en) 1988-02-26 1993-07-06 Fujitsu Limited Gettering treatment process
US5043224A (en) 1988-05-12 1991-08-27 Lehigh University Chemically enhanced thermal oxidation and nitridation of silicon and products thereof
US5173446A (en) 1988-06-28 1992-12-22 Ricoh Company, Ltd. Semiconductor substrate manufacturing by recrystallization using a cooling medium
US4996077A (en) 1988-10-07 1991-02-26 Texas Instruments Incorporated Distributed ECR remote plasma processing and apparatus
US4996523A (en) 1988-10-20 1991-02-26 Eastman Kodak Company Electroluminescent storage display with improved intensity driver circuits
JPH02140915A (ja) 1988-11-22 1990-05-30 Seiko Epson Corp 半導体装置の製造方法
DE69033153T2 (de) 1989-03-31 1999-11-11 Canon K.K., Tokio/Tokyo Verfahren zur Herstellung einer Halbleiterdünnschicht und damit hergestellte Halbleiterdünnschicht
US5200630A (en) 1989-04-13 1993-04-06 Sanyo Electric Co., Ltd. Semiconductor device
JPH02275641A (ja) 1989-04-17 1990-11-09 Seiko Epson Corp 半導体装置の製造方法
JPH02148687U (enExample) 1989-05-17 1990-12-18
US5075259A (en) 1989-08-22 1991-12-24 Motorola, Inc. Method for forming semiconductor contacts by electroless plating
US5278093A (en) 1989-09-23 1994-01-11 Canon Kabushiki Kaisha Method for forming semiconductor thin film
US5358907A (en) 1990-01-30 1994-10-25 Xerox Corporation Method of electrolessly depositing metals on a silicon substrate by immersing the substrate in hydrofluoric acid containing a buffered metal salt solution
JPH03280418A (ja) 1990-03-28 1991-12-11 Seiko Epson Corp 半導体膜の製造方法
JPH0760807B2 (ja) 1990-03-29 1995-06-28 株式会社ジーティシー 半導体薄膜の製造方法
US5089441A (en) 1990-04-16 1992-02-18 Texas Instruments Incorporated Low-temperature in-situ dry cleaning process for semiconductor wafers
DE69127395T2 (de) 1990-05-11 1998-01-02 Asahi Glass Co Ltd Verfahren zum Herstellen eines Dünnfilm-Transistors mit polykristallinem Halbleiter
EP0459763B1 (en) 1990-05-29 1997-05-02 Semiconductor Energy Laboratory Co., Ltd. Thin-film transistors
JP3186096B2 (ja) 1990-06-14 2001-07-11 アジレント・テクノロジーズ・インク 感光素子アレイの製造方法
JP2973492B2 (ja) 1990-08-22 1999-11-08 ソニー株式会社 半導体薄膜の結晶化方法
US5112764A (en) 1990-09-04 1992-05-12 North American Philips Corporation Method for the fabrication of low leakage polysilicon thin film transistors
US5210050A (en) 1990-10-15 1993-05-11 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a semiconductor device comprising a semiconductor film
JPH088439Y2 (ja) 1990-10-19 1996-03-06 株式会社丸東製作所 ペネトロメータ
TW237562B (enExample) * 1990-11-09 1995-01-01 Semiconductor Energy Res Co Ltd
DE69131570T2 (de) 1990-11-16 2000-02-17 Seiko Epson Corp., Tokio/Tokyo Verfahren zur Herstellung einer Dünnfilm-Halbleiteranordnung
KR950013784B1 (ko) 1990-11-20 1995-11-16 가부시키가이샤 한도오따이 에네루기 겐큐쇼 반도체 전계효과 트랜지스터 및 그 제조방법과 박막트랜지스터
KR950001360B1 (ko) 1990-11-26 1995-02-17 가부시키가이샤 한도오따이 에네루기 겐큐쇼 전기 광학장치와 그 구동방법
JP2838318B2 (ja) 1990-11-30 1998-12-16 株式会社半導体エネルギー研究所 感光装置及びその作製方法
JPH0828520B2 (ja) 1991-02-22 1996-03-21 株式会社半導体エネルギー研究所 薄膜半導体装置およびその製法
JP2794678B2 (ja) 1991-08-26 1998-09-10 株式会社 半導体エネルギー研究所 絶縁ゲイト型半導体装置およびその作製方法
JPH0824104B2 (ja) 1991-03-18 1996-03-06 株式会社半導体エネルギー研究所 半導体材料およびその作製方法
JP2794499B2 (ja) 1991-03-26 1998-09-03 株式会社半導体エネルギー研究所 半導体装置の作製方法
JPH0794757B2 (ja) 1991-04-10 1995-10-11 ナショナル住宅産業株式会社 交差屋根の交差部分の雨仕舞い構造
JPH05182923A (ja) 1991-05-28 1993-07-23 Semiconductor Energy Lab Co Ltd レーザーアニール方法
DE69223009T2 (de) 1991-08-02 1998-04-02 Canon Kk Flüssigkristall-Anzeigeeinheit
JP2784615B2 (ja) 1991-10-16 1998-08-06 株式会社半導体エネルギー研究所 電気光学表示装置およびその駆動方法
US5244836A (en) 1991-12-30 1993-09-14 North American Philips Corporation Method of manufacturing fusible links in semiconductor devices
US5485019A (en) 1992-02-05 1996-01-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for forming the same
US5424230A (en) 1992-02-19 1995-06-13 Casio Computer Co., Ltd. Method of manufacturing a polysilicon thin film transistor
JPH05299348A (ja) 1992-02-20 1993-11-12 Nec Corp 多結晶シリコン薄膜の形成方法
US5254480A (en) 1992-02-20 1993-10-19 Minnesota Mining And Manufacturing Company Process for producing a large area solid state radiation detector
US5402141A (en) * 1992-03-11 1995-03-28 Honeywell Inc. Multigap liquid crystal color display with reduced image retention and flicker
JPH05291220A (ja) 1992-04-14 1993-11-05 Sony Corp 半導体装置の製造方法
JPH0794756B2 (ja) 1992-05-28 1995-10-11 カナメルーフシステム株式会社 金属瓦の止着構造
US5288662A (en) 1992-06-15 1994-02-22 Air Products And Chemicals, Inc. Low ozone depleting organic chlorides for use during silicon oxidation and furnace tube cleaning
JP3280418B2 (ja) 1992-06-25 2002-05-13 松下電工株式会社 ヘアカッター
JP2560178B2 (ja) 1992-06-29 1996-12-04 九州電子金属株式会社 半導体ウェーハの製造方法
JP3280420B2 (ja) 1992-07-30 2002-05-13 株式会社紀文フードケミファ 豆乳を含むカルシウム吸収促進組成物
CN100465742C (zh) * 1992-08-27 2009-03-04 株式会社半导体能源研究所 有源矩阵显示器
US5300187A (en) 1992-09-03 1994-04-05 Motorola, Inc. Method of removing contaminants
JPH06177034A (ja) * 1992-12-03 1994-06-24 Sony Corp 半導体単結晶の成長方法
JP3241515B2 (ja) 1992-12-04 2001-12-25 株式会社半導体エネルギー研究所 半導体装置の製造方法
US5604360A (en) * 1992-12-04 1997-02-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including a plurality of thin film transistors at least some of which have a crystalline silicon film crystal-grown substantially in parallel to the surface of a substrate for the transistor
US5403762A (en) * 1993-06-30 1995-04-04 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating a TFT
TW226478B (en) * 1992-12-04 1994-07-11 Semiconductor Energy Res Co Ltd Semiconductor device and method for manufacturing the same
US6323071B1 (en) * 1992-12-04 2001-11-27 Semiconductor Energy Laboratory Co., Ltd. Method for forming a semiconductor device
JP3240719B2 (ja) * 1992-12-10 2001-12-25 ソニー株式会社 半導体薄膜結晶の成長方法
JPH0823104B2 (ja) 1992-12-11 1996-03-06 敏郎 小林 染色機
US5902993A (en) * 1992-12-28 1999-05-11 Kyocera Corporation Image scanner for image inputting in computers, facsimiles word processor, and the like
US5843225A (en) 1993-02-03 1998-12-01 Semiconductor Energy Laboratory Co., Ltd. Process for fabricating semiconductor and process for fabricating semiconductor device
JP3497198B2 (ja) * 1993-02-03 2004-02-16 株式会社半導体エネルギー研究所 半導体装置および薄膜トランジスタの作製方法
JPH06296023A (ja) * 1993-02-10 1994-10-21 Semiconductor Energy Lab Co Ltd 薄膜状半導体装置およびその作製方法
US6997985B1 (en) * 1993-02-15 2006-02-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor, semiconductor device, and method for fabricating the same
JP3662263B2 (ja) * 1993-02-15 2005-06-22 株式会社半導体エネルギー研究所 半導体装置の作製方法
US5639698A (en) 1993-02-15 1997-06-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor, semiconductor device, and method for fabricating the same
JP3562588B2 (ja) * 1993-02-15 2004-09-08 株式会社半導体エネルギー研究所 半導体装置の製造方法
JP3300153B2 (ja) 1993-02-15 2002-07-08 株式会社半導体エネルギー研究所 半導体装置の製造方法
US5275851A (en) 1993-03-03 1994-01-04 The Penn State Research Foundation Low temperature crystallization and patterning of amorphous silicon films on electrically insulating substrates
JPH06314787A (ja) 1993-03-05 1994-11-08 Semiconductor Energy Lab Co Ltd 薄膜半導体装置およびその作製方法
JP3107941B2 (ja) * 1993-03-05 2000-11-13 株式会社半導体エネルギー研究所 薄膜トランジスタおよびその作製方法
JPH06314785A (ja) 1993-03-05 1994-11-08 Semiconductor Energy Lab Co Ltd 薄膜半導体装置およびその作製方法
TW278219B (enExample) * 1993-03-12 1996-06-11 Handotai Energy Kenkyusho Kk
TW241377B (enExample) * 1993-03-12 1995-02-21 Semiconductor Energy Res Co Ltd
US6413805B1 (en) 1993-03-12 2002-07-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device forming method
CN1095204C (zh) * 1993-03-12 2002-11-27 株式会社半导体能源研究所 半导体器件和晶体管
US5624851A (en) * 1993-03-12 1997-04-29 Semiconductor Energy Laboratory Co., Ltd. Process of fabricating a semiconductor device in which one portion of an amorphous silicon film is thermally crystallized and another portion is laser crystallized
JP3193803B2 (ja) * 1993-03-12 2001-07-30 株式会社半導体エネルギー研究所 半導体素子の作製方法
US5501989A (en) * 1993-03-22 1996-03-26 Semiconductor Energy Laboratory Co., Ltd. Method of making semiconductor device/circuit having at least partially crystallized semiconductor layer
DE69416363T2 (de) * 1993-03-23 1999-09-23 Semiconductor Energy Laboratory Co., Ltd. Abbildendes festkörperbauteil und herstellungsverfahren dafür
JP3345089B2 (ja) 1993-03-26 2002-11-18 株式会社半導体エネルギー研究所 カラーフィルタ基板の作製方法
US5612732A (en) * 1993-03-31 1997-03-18 Casio Computer Co., Ltd. Portable compact imaging and displaying apparatus with rotatable camera
KR100355938B1 (ko) * 1993-05-26 2002-12-16 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치제작방법
US6875628B1 (en) * 1993-05-26 2005-04-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and fabrication method of the same
KR100186886B1 (ko) * 1993-05-26 1999-04-15 야마자끼 승페이 반도체장치 제작방법
US5481121A (en) * 1993-05-26 1996-01-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having improved crystal orientation
US5818076A (en) * 1993-05-26 1998-10-06 Semiconductor Energy Laboratory Co., Ltd. Transistor and semiconductor device
US5366926A (en) 1993-06-07 1994-11-22 Xerox Corporation Low temperature process for laser dehydrogenation and crystallization of amorphous silicon
JPH0745519Y2 (ja) 1993-06-11 1995-10-18 株式会社 ニッチ 鎖とフックの連結ボルト
JPH06349735A (ja) 1993-06-12 1994-12-22 Semiconductor Energy Lab Co Ltd 半導体装置
JP3450376B2 (ja) * 1993-06-12 2003-09-22 株式会社半導体エネルギー研究所 半導体装置の作製方法
US6713330B1 (en) * 1993-06-22 2004-03-30 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating a thin film transistor
US5488000A (en) * 1993-06-22 1996-01-30 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating a thin film transistor using a nickel silicide layer to promote crystallization of the amorphous silicon layer
TW295703B (enExample) 1993-06-25 1997-01-11 Handotai Energy Kenkyusho Kk
JP2791858B2 (ja) 1993-06-25 1998-08-27 株式会社半導体エネルギー研究所 半導体装置作製方法
US5895933A (en) 1993-06-25 1999-04-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for its preparation
US5387530A (en) 1993-06-29 1995-02-07 Digital Equipment Corporation Threshold optimization for soi transistors through use of negative charge in the gate oxide
US5372860A (en) 1993-07-06 1994-12-13 Corning Incorporated Silicon device production
JP3288490B2 (ja) * 1993-07-09 2002-06-04 富士通株式会社 半導体装置の製造方法及び半導体装置の製造装置
JP2789293B2 (ja) 1993-07-14 1998-08-20 株式会社半導体エネルギー研究所 半導体装置作製方法
KR0141659B1 (ko) * 1993-07-19 1998-07-15 가나이 쓰토무 이물제거 방법 및 장치
US5529937A (en) * 1993-07-27 1996-06-25 Semiconductor Energy Laboratory Co., Ltd. Process for fabricating thin film transistor
US5663077A (en) * 1993-07-27 1997-09-02 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a thin film transistor in which the gate insulator comprises two oxide films
US5985704A (en) * 1993-07-27 1999-11-16 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a semiconductor device
US5492843A (en) * 1993-07-31 1996-02-20 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating semiconductor device and method of processing substrate
JP2975973B2 (ja) * 1993-08-10 1999-11-10 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
JP2762215B2 (ja) * 1993-08-12 1998-06-04 株式会社半導体エネルギー研究所 薄膜トランジスタおよび半導体装置の作製方法
US5580815A (en) * 1993-08-12 1996-12-03 Motorola Inc. Process for forming field isolation and a structure over a semiconductor substrate
JPH0766424A (ja) 1993-08-20 1995-03-10 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JP2814049B2 (ja) * 1993-08-27 1998-10-22 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
TW264575B (enExample) * 1993-10-29 1995-12-01 Handotai Energy Kenkyusho Kk
JP3562590B2 (ja) 1993-12-01 2004-09-08 株式会社半導体エネルギー研究所 半導体装置作製方法
US5612250A (en) * 1993-12-01 1997-03-18 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a semiconductor device using a catalyst
CN100358095C (zh) * 1993-12-02 2007-12-26 株式会社半导体能源研究所 半导体器件的制造方法
US5869362A (en) * 1993-12-02 1999-02-09 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device
US5654203A (en) * 1993-12-02 1997-08-05 Semiconductor Energy Laboratory, Co., Ltd. Method for manufacturing a thin film transistor using catalyst elements to promote crystallization
JP2860869B2 (ja) * 1993-12-02 1999-02-24 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
US5535471A (en) * 1993-12-15 1996-07-16 Texas Instruments Incorporated Tool for cleaning LPCVD furnace tube
TW272319B (enExample) 1993-12-20 1996-03-11 Sharp Kk
KR100319332B1 (ko) * 1993-12-22 2002-04-22 야마자끼 순페이 반도체장치및전자광학장치
JP2873669B2 (ja) 1993-12-24 1999-03-24 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
TW279275B (enExample) 1993-12-27 1996-06-21 Sharp Kk
JP3041177B2 (ja) 1993-12-27 2000-05-15 シャープ株式会社 半導体装置の製造方法
JPH07199150A (ja) * 1993-12-28 1995-08-04 Canon Inc 液晶表示装置
JP3108296B2 (ja) * 1994-01-26 2000-11-13 三洋電機株式会社 表示装置の製造方法
JP3221473B2 (ja) * 1994-02-03 2001-10-22 株式会社半導体エネルギー研究所 半導体装置の作製方法
US6884698B1 (en) * 1994-02-23 2005-04-26 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device with crystallization of amorphous silicon
JP3378078B2 (ja) * 1994-02-23 2003-02-17 株式会社半導体エネルギー研究所 半導体装置の作製方法
US5610737A (en) * 1994-03-07 1997-03-11 Kabushiki Kaisha Toshiba Thin film transistor with source and drain regions having two semiconductor layers, one being fine crystalline silicon
JP3150840B2 (ja) 1994-03-11 2001-03-26 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP3195157B2 (ja) * 1994-03-28 2001-08-06 シャープ株式会社 半導体装置の製造方法およびその製造装置
JP3344072B2 (ja) * 1994-03-31 2002-11-11 ソニー株式会社 薄膜トランジスタの製造方法
KR100279217B1 (ko) 1994-04-13 2001-02-01 야마자끼 순페이 반도체 장치 형성 방법, 결정성 반도체 막 형성 방법, 박막 트랜지스터 형성 방법 및 반도체 장치 제조 방법
JP3192546B2 (ja) 1994-04-15 2001-07-30 シャープ株式会社 半導体装置およびその製造方法
JPH07302912A (ja) 1994-04-29 1995-11-14 Semiconductor Energy Lab Co Ltd 半導体装置
US5621244A (en) 1994-05-16 1997-04-15 Lin; Shih-Jen Fin assembly for an integrated circuit
JP3540012B2 (ja) * 1994-06-07 2004-07-07 株式会社半導体エネルギー研究所 半導体装置作製方法
JP3468848B2 (ja) 1994-06-09 2003-11-17 株式会社半導体エネルギー研究所 薄膜トランジスタおよびその作製方法、並びに液晶表示装置およびその作製方法
US6337232B1 (en) 1995-06-07 2002-01-08 Semiconductor Energy Laboratory Co., Ltd. Method of fabrication of a crystalline silicon thin film semiconductor with a thin channel region
JPH07335906A (ja) 1994-06-14 1995-12-22 Semiconductor Energy Lab Co Ltd 薄膜状半導体装置およびその作製方法
JP3190520B2 (ja) * 1994-06-14 2001-07-23 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
JP3504336B2 (ja) * 1994-06-15 2004-03-08 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP3067949B2 (ja) * 1994-06-15 2000-07-24 シャープ株式会社 電子装置および液晶表示装置
JP3072000B2 (ja) * 1994-06-23 2000-07-31 株式会社半導体エネルギー研究所 半導体装置の作製方法
TW273639B (en) * 1994-07-01 1996-04-01 Handotai Energy Kenkyusho Kk Method for producing semiconductor device
US5898188A (en) * 1994-07-06 1999-04-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for its fabrication
JP3683605B2 (ja) 1994-09-26 2005-08-17 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP3034765B2 (ja) 1994-07-28 2000-04-17 株式会社半導体エネルギー研究所 レーザー処理方法
TW406861U (en) * 1994-07-28 2000-09-21 Semiconductor Energy Lab Laser processing system
JP3295241B2 (ja) 1994-07-28 2002-06-24 株式会社半導体エネルギー研究所 半導体装置の作製方法
KR0136932B1 (ko) 1994-07-30 1998-04-24 문정환 반도체 소자 및 그의 제조방법
JP3464285B2 (ja) 1994-08-26 2003-11-05 株式会社半導体エネルギー研究所 半導体装置の作製方法
TW395008B (en) * 1994-08-29 2000-06-21 Semiconductor Energy Lab Semiconductor circuit for electro-optical device and method of manufacturing the same
JP3442500B2 (ja) * 1994-08-31 2003-09-02 株式会社半導体エネルギー研究所 半導体回路の作製方法
TW374247B (en) * 1994-09-15 1999-11-11 Semiconductor Energy Lab Co Ltd Method of fabricating semiconductor device
US5712191A (en) * 1994-09-16 1998-01-27 Semiconductor Energy Laboratory Co., Ltd. Method for producing semiconductor device
JP3600326B2 (ja) * 1994-09-29 2004-12-15 旺宏電子股▲ふん▼有限公司 不揮発性半導体メモリ装置およびその製造方法
JP3942651B2 (ja) * 1994-10-07 2007-07-11 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP3486240B2 (ja) * 1994-10-20 2004-01-13 株式会社半導体エネルギー研究所 半導体装置
JP3474286B2 (ja) 1994-10-26 2003-12-08 株式会社半導体エネルギー研究所 薄膜トランジスタの作製方法
JP3467334B2 (ja) 1994-10-31 2003-11-17 Ｔｄｋ株式会社 エレクトロルミネセンス表示装置
JPH08129358A (ja) 1994-10-31 1996-05-21 Tdk Corp エレクトロルミネセンス表示装置
JPH08129360A (ja) 1994-10-31 1996-05-21 Tdk Corp エレクトロルミネセンス表示装置
JP3535241B2 (ja) * 1994-11-18 2004-06-07 株式会社半導体エネルギー研究所 半導体デバイス及びその作製方法
US6008101A (en) 1994-11-29 1999-12-28 Semiconductor Energy Laboratory Co., Ltd. Laser processing method of semiconductor device
US5756364A (en) * 1994-11-29 1998-05-26 Semiconductor Energy Laboratory Co., Ltd. Laser processing method of semiconductor device using a catalyst
US5684365A (en) 1994-12-14 1997-11-04 Eastman Kodak Company TFT-el display panel using organic electroluminescent media
US5550066A (en) 1994-12-14 1996-08-27 Eastman Kodak Company Method of fabricating a TFT-EL pixel
DE69535970D1 (de) 1994-12-14 2009-08-06 Eastman Kodak Co Elektrolumineszente Vorrichtung mit einer organischen elektrolumineszenten Schicht
TW297950B (enExample) * 1994-12-16 1997-02-11 Handotai Energy Kenkyusho Kk
US6006763A (en) 1995-01-11 1999-12-28 Seiko Epson Corporation Surface treatment method
JPH08255907A (ja) 1995-01-18 1996-10-01 Canon Inc 絶縁ゲート型トランジスタ及びその製造方法
US5929464A (en) 1995-01-20 1999-07-27 Semiconductor Energy Laboratory Co., Ltd. Active matrix electro-optical device
JP4130237B2 (ja) * 1995-01-28 2008-08-06 株式会社半導体エネルギー研究所 結晶性珪素膜の作製方法及び半導体装置の作製方法
US6165876A (en) 1995-01-30 2000-12-26 Yamazaki; Shunpei Method of doping crystalline silicon film
TW344901B (en) 1995-02-15 1998-11-11 Handotai Energy Kenkyusho Kk Active matrix display device
JP3364081B2 (ja) * 1995-02-16 2003-01-08 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP3778456B2 (ja) 1995-02-21 2006-05-24 株式会社半導体エネルギー研究所 絶縁ゲイト型薄膜半導体装置の作製方法
JPH08241997A (ja) 1995-03-03 1996-09-17 Tdk Corp 薄膜トランジスタ
JPH08241057A (ja) 1995-03-03 1996-09-17 Tdk Corp 画像表示装置
JP3675886B2 (ja) * 1995-03-17 2005-07-27 株式会社半導体エネルギー研究所 薄膜半導体デバイスの作製方法
TW355845B (en) * 1995-03-27 1999-04-11 Semiconductor Energy Lab Co Ltd Semiconductor device and a method of manufacturing the same
JP3499327B2 (ja) * 1995-03-27 2004-02-23 株式会社半導体エネルギー研究所 表示装置の作製方法
JP3292657B2 (ja) 1995-04-10 2002-06-17 キヤノン株式会社 薄膜トランジスタ及びそれを用いた液晶表示装置の製造法
US6069674A (en) * 1995-05-19 2000-05-30 Sharp Kabushiki Kaisha Liquid crystal display apparatus
US5704986A (en) 1995-09-18 1998-01-06 Taiwan Semiconductor Manufacturing Company Ltd Semiconductor substrate dry cleaning method
JPH1056180A (ja) * 1995-09-29 1998-02-24 Canon Inc 半導体装置及びその製造方法
JPH09191111A (ja) 1995-11-07 1997-07-22 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
US5940732A (en) 1995-11-27 1999-08-17 Semiconductor Energy Laboratory Co., Method of fabricating semiconductor device
JP3124480B2 (ja) 1995-12-12 2001-01-15 株式会社半導体エネルギー研究所 半導体装置の作製方法
US5734179A (en) 1995-12-12 1998-03-31 Advanced Micro Devices, Inc. SRAM cell having single layer polysilicon thin film transistors
TW309633B (enExample) 1995-12-14 1997-07-01 Handotai Energy Kenkyusho Kk
TW319912B (enExample) * 1995-12-15 1997-11-11 Handotai Energy Kenkyusho Kk
US5782665A (en) 1995-12-29 1998-07-21 Xerox Corporation Fabricating array with storage capacitor between cell electrode and dark matrix
JP3645379B2 (ja) 1996-01-19 2005-05-11 株式会社半導体エネルギー研究所 半導体装置の作製方法
US6478263B1 (en) 1997-01-17 2002-11-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and its manufacturing method
US5985740A (en) 1996-01-19 1999-11-16 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device including reduction of a catalyst
JP3729955B2 (ja) * 1996-01-19 2005-12-21 株式会社半導体エネルギー研究所 半導体装置の作製方法
US5888858A (en) 1996-01-20 1999-03-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and fabrication method thereof
KR100440083B1 (ko) 1996-01-23 2004-10-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체박막제작방법
US6180439B1 (en) * 1996-01-26 2001-01-30 Semiconductor Energy Laboratory Co., Ltd. Method for fabricating a semiconductor device
US7056381B1 (en) * 1996-01-26 2006-06-06 Semiconductor Energy Laboratory Co., Ltd. Fabrication method of semiconductor device
US6465287B1 (en) * 1996-01-27 2002-10-15 Semiconductor Energy Laboratory Co., Ltd. Method for fabricating a semiconductor device using a metal catalyst and high temperature crystallization
US6063654A (en) 1996-02-20 2000-05-16 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a thin film transistor involving laser treatment
TW317643B (enExample) 1996-02-23 1997-10-11 Handotai Energy Kenkyusho Kk
JP3476320B2 (ja) 1996-02-23 2003-12-10 株式会社半導体エネルギー研究所 半導体薄膜およびその作製方法ならびに半導体装置およびその作製方法
US6100562A (en) 1996-03-17 2000-08-08 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
US5786533A (en) * 1996-04-17 1998-07-28 Michelin North America, Inc. Method for analyzing a separation in a deformable structure
JP3727416B2 (ja) 1996-05-31 2005-12-14 株式会社半導体エネルギー研究所 表示装置
JPH1012889A (ja) 1996-06-18 1998-01-16 Semiconductor Energy Lab Co Ltd 半導体薄膜および半導体装置
JP3519214B2 (ja) 1996-06-20 2004-04-12 株式会社半導体エネルギー研究所 集積回路およびその作製方法
US6005648A (en) 1996-06-25 1999-12-21 Semiconductor Energy Laboratory Co., Ltd. Display device
TW556263B (en) 1996-07-11 2003-10-01 Semiconductor Energy Lab Semiconductor device and method of manufacturing the same
JP3759999B2 (ja) 1996-07-16 2006-03-29 株式会社半導体エネルギー研究所 半導体装置、液晶表示装置、ｅｌ装置、ｔｖカメラ表示装置、パーソナルコンピュータ、カーナビゲーションシステム、ｔｖプロジェクション装置及びビデオカメラ
JP4086925B2 (ja) 1996-12-27 2008-05-14 株式会社半導体エネルギー研究所 アクティブマトリクスディスプレイ
JPH10200114A (ja) 1996-12-30 1998-07-31 Semiconductor Energy Lab Co Ltd 薄膜回路
US6011275A (en) 1996-12-30 2000-01-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
JPH10223532A (ja) 1997-02-10 1998-08-21 Semiconductor Energy Lab Co Ltd 半導体の作製方法及び半導体装置の作製方法
JP3942683B2 (ja) 1997-02-12 2007-07-11 株式会社半導体エネルギー研究所 半導体装置作製方法
JP4831850B2 (ja) 1997-07-08 2011-12-07 株式会社半導体エネルギー研究所 薄膜トランジスタの作製方法
US5846857A (en) 1997-09-05 1998-12-08 Advanced Micro Devices, Inc. CMOS processing employing removable sidewall spacers for independently optimized N- and P-channel transistor performance
US6294441B1 (en) 1998-08-18 2001-09-25 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
JP3425392B2 (ja) * 1999-05-27 2003-07-14 シャープ株式会社 半導体装置の製造方法
CN1109212C (zh) 2000-10-30 2003-05-21 甘国工 管壁有空心增强结构的高分子拉伸定向复合塑料管

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5147826A (en) * 1990-08-06 1992-09-15 The Pennsylvania Research Corporation Low temperature crystallization and pattering of amorphous silicon films
US5289030A (en) * 1991-03-06 1994-02-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device with oxide layer
US5354697A (en) * 1991-09-23 1994-10-11 U.S. Philips Corporation Implantation method having improved material purity
US5470763A (en) * 1993-09-21 1995-11-28 Nec Corporation Method for manufacturing thin film transistor with short hydrogen passivation time

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CN1630024A (zh) 2005-06-22
KR100419550B1 (ko) 2004-06-18
US6504174B1 (en) 2003-01-07
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US20030094625A1 (en) 2003-05-22
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