CN105047539B - 提高SiC MOSFET沟道迁移率的方法 - Google Patents
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- CN105047539B CN105047539B CN201510486422.9A CN201510486422A CN105047539B CN 105047539 B CN105047539 B CN 105047539B CN 201510486422 A CN201510486422 A CN 201510486422A CN 105047539 B CN105047539 B CN 105047539B
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- 238000000034 method Methods 0.000 title claims abstract description 61
- 230000037230 mobility Effects 0.000 title claims abstract description 26
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 40
- 229910052681 coesite Inorganic materials 0.000 claims abstract description 34
- 229910052906 cristobalite Inorganic materials 0.000 claims abstract description 34
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 34
- 229910052682 stishovite Inorganic materials 0.000 claims abstract description 34
- 229910052905 tridymite Inorganic materials 0.000 claims abstract description 34
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 30
- 239000001301 oxygen Substances 0.000 claims abstract description 30
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 30
- 235000012431 wafers Nutrition 0.000 claims abstract description 23
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims abstract description 22
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 21
- 230000003647 oxidation Effects 0.000 claims abstract description 20
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 20
- 239000012298 atmosphere Substances 0.000 claims abstract description 12
- 229910052751 metal Inorganic materials 0.000 claims abstract description 7
- 239000002184 metal Substances 0.000 claims abstract description 7
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 7
- 229920005591 polysilicon Polymers 0.000 claims abstract description 7
- 238000002203 pretreatment Methods 0.000 claims abstract description 6
- 238000012545 processing Methods 0.000 claims abstract description 6
- 239000000243 solution Substances 0.000 claims description 26
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 18
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 17
- 238000002347 injection Methods 0.000 claims description 17
- 239000007924 injection Substances 0.000 claims description 17
- 238000005516 engineering process Methods 0.000 claims description 12
- 239000011259 mixed solution Substances 0.000 claims description 9
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 6
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 6
- 239000008367 deionised water Substances 0.000 claims description 6
- 229910021641 deionized water Inorganic materials 0.000 claims description 6
- 238000000407 epitaxy Methods 0.000 claims description 6
- 238000000137 annealing Methods 0.000 claims description 5
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 4
- 229910000077 silane Inorganic materials 0.000 claims description 4
- 235000011114 ammonium hydroxide Nutrition 0.000 claims description 3
- QAOWNCQODCNURD-UHFFFAOYSA-N sulfuric acid Substances OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 50
- 229910010271 silicon carbide Inorganic materials 0.000 description 50
- 230000008569 process Effects 0.000 description 15
- 238000010586 diagram Methods 0.000 description 12
- 238000002513 implantation Methods 0.000 description 12
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 9
- 238000004140 cleaning Methods 0.000 description 9
- 150000002500 ions Chemical class 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 7
- 229910044991 metal oxide Inorganic materials 0.000 description 6
- 125000004432 carbon atom Chemical group C* 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- 150000004706 metal oxides Chemical class 0.000 description 5
- 229910052757 nitrogen Inorganic materials 0.000 description 5
- 238000001259 photo etching Methods 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 230000005669 field effect Effects 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
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- 229910000838 Al alloy Inorganic materials 0.000 description 2
- -1 Nitrogen ion Chemical class 0.000 description 2
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- 229910001069 Ti alloy Inorganic materials 0.000 description 2
- REDXJYDRNCIFBQ-UHFFFAOYSA-N aluminium(3+) Chemical compound [Al+3] REDXJYDRNCIFBQ-UHFFFAOYSA-N 0.000 description 2
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- 229910003465 moissanite Inorganic materials 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
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- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 1
- 150000001335 aliphatic alkanes Chemical class 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
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- 229910052799 carbon Inorganic materials 0.000 description 1
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- 238000010438 heat treatment Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1608—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
Claims (8)
Priority Applications (1)
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CN201510486422.9A CN105047539B (zh) | 2015-08-07 | 2015-08-07 | 提高SiC MOSFET沟道迁移率的方法 |
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CN201510486422.9A CN105047539B (zh) | 2015-08-07 | 2015-08-07 | 提高SiC MOSFET沟道迁移率的方法 |
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CN105047539A CN105047539A (zh) | 2015-11-11 |
CN105047539B true CN105047539B (zh) | 2017-08-01 |
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Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
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CN105513962A (zh) * | 2016-01-12 | 2016-04-20 | 上海晶亮电子科技有限公司 | 碳化硅器件中的Trench MOSFET的栅氧化加工方法 |
CN108807505B (zh) * | 2018-08-28 | 2021-01-08 | 电子科技大学 | 一种碳化硅mosfet器件及其制造方法 |
FR3086101B1 (fr) | 2018-09-17 | 2022-07-08 | Ion Beam Services | Dispositif d'amelioration de la mobilite des porteurs dans un canal de mosfet sur carbure de silicium |
CN109801840A (zh) * | 2018-12-04 | 2019-05-24 | 中国科学院微电子研究所 | 一种改善SiC器件界面特征的方法及SiC器件 |
CN110783174A (zh) * | 2019-10-22 | 2020-02-11 | 中国电子科技集团公司第五十五研究所 | 一种在碳化硅材料上制造栅极氧化层的方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6136727A (en) * | 1997-12-19 | 2000-10-24 | Fuji Eletric Co., Ltd. | Method for forming thermal oxide film of silicon carbide semiconductor device |
CN1318157A (zh) * | 1998-09-17 | 2001-10-17 | 宽蒂斯瑞普特公司 | 使用无抗蚀剂电子束光刻制造亚微米抗蚀金属/半导体结构 |
CN1630024A (zh) * | 1996-01-19 | 2005-06-22 | 株式会社半导体能源研究所 | 半导体器件及其制造方法 |
Family Cites Families (1)
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US20060244074A1 (en) * | 2005-04-29 | 2006-11-02 | Chien-Hao Chen | Hybrid-strained sidewall spacer for CMOS process |
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2015
- 2015-08-07 CN CN201510486422.9A patent/CN105047539B/zh active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1630024A (zh) * | 1996-01-19 | 2005-06-22 | 株式会社半导体能源研究所 | 半导体器件及其制造方法 |
US6136727A (en) * | 1997-12-19 | 2000-10-24 | Fuji Eletric Co., Ltd. | Method for forming thermal oxide film of silicon carbide semiconductor device |
CN1318157A (zh) * | 1998-09-17 | 2001-10-17 | 宽蒂斯瑞普特公司 | 使用无抗蚀剂电子束光刻制造亚微米抗蚀金属/半导体结构 |
Non-Patent Citations (1)
Title |
---|
4H-SiC MESFET理论模型与实验研究;吕红亮;《中国博士学位论文全文数据库·信息科技辑》;20080430;第I135-26页 * |
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Effective date of registration: 20210324 Address after: Room 405, building 3, no.1690, Cailun Road, Pudong New Area, Shanghai, 200120 Patentee after: Yaoxin microelectronics technology (Shanghai) Co.,Ltd. Address before: 105-14, 1st floor, building A1, phase II, software new town, 156 Tiangu 8th Road, Yuhua Street office, high tech Zone, Xi'an, Shaanxi 710000 Patentee before: Xi'an Cresun Innovation Technology Co.,Ltd. |
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