JP2005116727A - 絶縁体薄膜の製造方法と絶縁体薄膜および半導体装置の製造方法と半導体装置 - Google Patents
絶縁体薄膜の製造方法と絶縁体薄膜および半導体装置の製造方法と半導体装置 Download PDFInfo
- Publication number
- JP2005116727A JP2005116727A JP2003347931A JP2003347931A JP2005116727A JP 2005116727 A JP2005116727 A JP 2005116727A JP 2003347931 A JP2003347931 A JP 2003347931A JP 2003347931 A JP2003347931 A JP 2003347931A JP 2005116727 A JP2005116727 A JP 2005116727A
- Authority
- JP
- Japan
- Prior art keywords
- atomic layer
- thin film
- insulator thin
- forming
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 127
- 239000012212 insulator Substances 0.000 title claims abstract description 101
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 55
- 239000004065 semiconductor Substances 0.000 title claims description 30
- 239000000758 substrate Substances 0.000 claims abstract description 79
- 238000000034 method Methods 0.000 claims abstract description 66
- 229910052751 metal Inorganic materials 0.000 claims abstract description 54
- 239000002184 metal Substances 0.000 claims abstract description 54
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 43
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 42
- 239000010703 silicon Substances 0.000 claims abstract description 41
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 34
- 238000000231 atomic layer deposition Methods 0.000 claims abstract description 33
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 30
- 239000001301 oxygen Substances 0.000 claims abstract description 30
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 28
- 229910052757 nitrogen Inorganic materials 0.000 claims description 14
- 239000012298 atmosphere Substances 0.000 claims description 8
- 229910052796 boron Inorganic materials 0.000 abstract description 11
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract description 10
- 230000035515 penetration Effects 0.000 abstract description 7
- 230000006866 deterioration Effects 0.000 abstract description 6
- 230000000452 restraining effect Effects 0.000 abstract 1
- 239000010408 film Substances 0.000 description 91
- 239000007789 gas Substances 0.000 description 20
- 125000004429 atom Chemical group 0.000 description 19
- 229910052814 silicon oxide Inorganic materials 0.000 description 19
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 18
- 229910004298 SiO 2 Inorganic materials 0.000 description 11
- 229910052735 hafnium Inorganic materials 0.000 description 11
- 238000010586 diagram Methods 0.000 description 9
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 9
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(iv) oxide Chemical compound O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 7
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 7
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 6
- 229910004129 HfSiO Inorganic materials 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 6
- 230000005669 field effect Effects 0.000 description 6
- 238000005121 nitriding Methods 0.000 description 6
- 229920005591 polysilicon Polymers 0.000 description 6
- 238000000137 annealing Methods 0.000 description 5
- 238000007796 conventional method Methods 0.000 description 5
- 239000011261 inert gas Substances 0.000 description 5
- 229910044991 metal oxide Inorganic materials 0.000 description 5
- 150000004706 metal oxides Chemical class 0.000 description 5
- 238000010926 purge Methods 0.000 description 5
- 239000007772 electrode material Substances 0.000 description 4
- PDPJQWYGJJBYLF-UHFFFAOYSA-J hafnium tetrachloride Chemical compound Cl[Hf](Cl)(Cl)Cl PDPJQWYGJJBYLF-UHFFFAOYSA-J 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 239000012299 nitrogen atmosphere Substances 0.000 description 4
- 239000007800 oxidant agent Substances 0.000 description 4
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000004151 rapid thermal annealing Methods 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 2
- 229910003902 SiCl 4 Inorganic materials 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 229910000449 hafnium oxide Inorganic materials 0.000 description 2
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- UHUUYVZLXJHWDV-UHFFFAOYSA-N trimethyl(methylsilyloxy)silane Chemical compound C[SiH2]O[Si](C)(C)C UHUUYVZLXJHWDV-UHFFFAOYSA-N 0.000 description 2
- 230000005641 tunneling Effects 0.000 description 2
- QFSLTTNSFXNOGU-UHFFFAOYSA-N 2,3-dimethylbutan-2-ylsilane Chemical compound CC(C)C(C)(C)[SiH3] QFSLTTNSFXNOGU-UHFFFAOYSA-N 0.000 description 1
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 description 1
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- GMMGOEVABABMBA-UHFFFAOYSA-N CC(C)C(C)(C)N[Hf] Chemical compound CC(C)C(C)(C)N[Hf] GMMGOEVABABMBA-UHFFFAOYSA-N 0.000 description 1
- SDHZVBFDSMROJJ-UHFFFAOYSA-N CCCCO[Hf] Chemical group CCCCO[Hf] SDHZVBFDSMROJJ-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 150000001638 boron Chemical class 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- QOSATHPSBFQAML-UHFFFAOYSA-N hydrogen peroxide;hydrate Chemical compound O.OO QOSATHPSBFQAML-UHFFFAOYSA-N 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- -1 nitrogen ions Chemical class 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000005001 rutherford backscattering spectroscopy Methods 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 239000005049 silicon tetrachloride Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/401—Oxides containing silicon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
- C23C16/45529—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations specially adapted for making a layer stack of alternating different compositions or gradient compositions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02321—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02321—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer
- H01L21/02329—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer introduction of nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02337—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour
- H01L21/0234—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour treatment by exposure to a plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28158—Making the insulator
- H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
- H01L21/28202—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation in a nitrogen-containing ambient, e.g. nitride deposition, growth, oxynitridation, NH3 nitridation, N2O oxidation, thermal nitridation, RTN, plasma nitridation, RPN
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/3141—Deposition using atomic layer deposition techniques [ALD]
- H01L21/3142—Deposition using atomic layer deposition techniques [ALD] of nano-laminates, e.g. alternating layers of Al203-Hf02
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/511—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures
- H01L29/513—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures the variation being perpendicular to the channel plane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/517—Insulating materials associated therewith the insulating material comprising a metallic compound, e.g. metal oxide, metal silicate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
- H01L21/02181—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing hafnium, e.g. HfO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
- H01L21/31604—Deposition from a gas or vapour
- H01L21/31608—Deposition of SiO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
- H01L21/31604—Deposition from a gas or vapour
- H01L21/31645—Deposition of Hafnium oxides, e.g. HfO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/518—Insulating materials associated therewith the insulating material containing nitrogen, e.g. nitride, oxynitride, nitrogen-doped material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Manufacturing & Machinery (AREA)
- General Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Nanotechnology (AREA)
- Plasma & Fusion (AREA)
- Formation Of Insulating Films (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Recrystallisation Techniques (AREA)
Abstract
【解決手段】原子層蒸着法を用いて基板100上に薄膜を形成する絶縁体薄膜102の製造方法であって、前記基板100の処理表面にシリコン原子層を形成し、前記シリコン原子層上に酸素原子層を形成する第1工程と、前記基板100の処理表面に金属原子層を形成し、前記金属原子層上に酸素原子層を形成する第2工程とを有することを特徴とし、前記第1工程および前記第2工程の実施回数を制御することにより前記絶縁体薄膜102中の前記金属原子の濃度を制御する絶縁体薄膜の製造方法である。
【選択図】図1
Description
Claims (16)
- 原子層蒸着法を用いて基板上に薄膜を形成する絶縁体薄膜の製造方法であって、
前記基板の処理表面にシリコン原子層を形成し、前記シリコン原子層上に酸素原子層を形成する第1工程と、
前記基板の処理表面に金属原子層を形成し、前記金属原子層上に酸素原子層を形成する第2工程と
を有することを特徴とする絶縁体薄膜の製造方法。 - 前記第1工程および前記第2工程の実施回数を制御することにより前記絶縁体薄膜中の前記金属原子の濃度を制御する
ことを特徴とする請求項1記載の絶縁体薄膜の製造方法。 - 窒素を含む雰囲気中でプラズマを発生させた状態で前記絶縁体薄膜中に窒素を添加する工程
を備えたことを特徴とする請求項1記載の絶縁体薄膜の製造方法。 - 前記プラズマはパルス電源により放電を行うこと
を特徴とする請求項3記載の絶縁体薄膜の製造方法。 - 前記絶縁体薄膜を不活性雰囲気中でアニールする
ことを特徴とする請求項1記載の絶縁体薄膜の製造方法。 - 原子層蒸着法を用いて基板上に形成される絶縁体薄膜であって、
前記絶縁体薄膜は、
原子層蒸着法を用いて、前記基板の処理表面にシリコン原子層を形成し、前記シリコン原子層上に酸素原子層を形成する第1工程と、
原子層蒸着法を用いて、前記基板の処理表面に金属原子層を形成し、前記金属原子層上に酸素原子層を形成する第2工程と
の実施回数を制御することにより前記絶縁体薄膜中の前記金属原子の濃度を制御して形成されたものである
ことを特徴とする絶縁体薄膜。 - 前記絶縁体薄膜中に窒素が添加されている
ことを特徴とする請求項6記載の絶縁体薄膜。 - 前記絶縁体薄膜は不活性雰囲気中でアニールされている
ことを特徴とする請求項6記載の絶縁体薄膜。 - 絶縁体薄膜を形成する工程を備えた半導体装置の製造方法であって、
前記絶縁体薄膜の形成工程は、
原子層蒸着法を用いて、基板の処理表面にシリコン原子層を形成し、前記シリコン原子層上に酸素原子層を形成する第1工程と、
原子層蒸着法を用いて、前記基板の処理表面に金属原子層を形成し、前記金属原子層上に酸素原子層を形成する第2工程とを備えた
ことを特徴とする半導体装置の製造方法。 - 前記第1工程および前記第2工程の実施回数を制御することにより前記絶縁体薄膜中の前記金属原子の濃度を制御する
ことを特徴とする請求項9記載の半導体装置の製造方法。 - 前記絶縁体薄膜中に窒素が添加されている
ことを特徴とする請求項9記載の半導体装置の製造方法。 - 前記絶縁体薄膜は不活性雰囲気中でアニールされている
ことを特徴とする請求項9記載の半導体装置の製造方法。 - 絶縁体薄膜を備えた半導体装置であって、
前記絶縁体薄膜は、
原子層蒸着法を用いて、基板の処理表面にシリコン原子層を形成し、前記シリコン原子層上に酸素原子層を形成する第1工程と、
原子層蒸着法を用いて、前記基板の処理表面に金属原子層を形成し、前記金属原子層上に酸素原子層を形成する第2工程と
を実施することにより形成されたものである
ことを特徴とする半導体装置。 - 前記第1工程および前記第2工程の実施回数を制御することにより前記絶縁体薄膜中の前記金属原子の濃度が制御されている
ことを特徴とする請求項13記載の半導体装置。 - 前記絶縁体薄膜中に窒素が添加されている
ことを特徴とする請求項13記載の半導体装置。 - 前記絶縁体薄膜は不活性雰囲気中でアニールされている
ことを特徴とする請求項13記載の半導体装置。
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003347931A JP4059183B2 (ja) | 2003-10-07 | 2003-10-07 | 絶縁体薄膜の製造方法 |
US10/957,948 US7189660B2 (en) | 2003-10-07 | 2004-10-04 | Method of producing insulator thin film, insulator thin film, method of manufacturing semiconductor device, and semiconductor device |
KR1020040079501A KR101078498B1 (ko) | 2003-10-07 | 2004-10-06 | 절연체 박막의 제조 방법 |
DE102004048679.4A DE102004048679B4 (de) | 2003-10-07 | 2004-10-06 | Verfahren zum Herstellen eines Isolator-Dünnfilms sowie Verfahren zum Herstellen eines Halbleiterbauteils |
TW093130432A TWI261879B (en) | 2003-10-07 | 2004-10-07 | Method of producing insulator thin film, insulator thin film, method of manufacturing semiconductor device, and semiconductor device |
US11/644,236 US7473994B2 (en) | 2003-10-07 | 2006-12-22 | Method of producing insulator thin film, insulator thin film, method of manufacturing semiconductor device, and semiconductor device |
US12/349,374 US7622401B2 (en) | 2003-10-07 | 2009-01-06 | Method of producing insulator thin film, insulator thin film, method of manufacturing semiconductor device, and semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003347931A JP4059183B2 (ja) | 2003-10-07 | 2003-10-07 | 絶縁体薄膜の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005116727A true JP2005116727A (ja) | 2005-04-28 |
JP4059183B2 JP4059183B2 (ja) | 2008-03-12 |
Family
ID=34430941
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2003347931A Expired - Fee Related JP4059183B2 (ja) | 2003-10-07 | 2003-10-07 | 絶縁体薄膜の製造方法 |
Country Status (5)
Country | Link |
---|---|
US (3) | US7189660B2 (ja) |
JP (1) | JP4059183B2 (ja) |
KR (1) | KR101078498B1 (ja) |
DE (1) | DE102004048679B4 (ja) |
TW (1) | TWI261879B (ja) |
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005191482A (ja) * | 2003-12-26 | 2005-07-14 | Semiconductor Leading Edge Technologies Inc | 半導体装置及びその製造方法 |
JP2006032948A (ja) * | 2004-07-10 | 2006-02-02 | Samsung Electronics Co Ltd | 複合誘電膜の形成方法、及びこれを用いる半導体装置の製造方法 |
JP2006073758A (ja) * | 2004-09-01 | 2006-03-16 | Hitachi Kokusai Electric Inc | 半導体装置の製造方法 |
JP2007005365A (ja) * | 2005-06-21 | 2007-01-11 | Nec Electronics Corp | 高誘電率膜の成膜方法および半導体装置の製造方法 |
JP2008205136A (ja) * | 2007-02-19 | 2008-09-04 | Rohm Co Ltd | 半導体装置及びその製造方法 |
JP2009514218A (ja) * | 2005-10-26 | 2009-04-02 | インターナショナル・ビジネス・マシーンズ・コーポレーション | 二重の閾値電圧制御手段を有する低閾値電圧の半導体デバイス |
JP2009545138A (ja) * | 2006-07-21 | 2009-12-17 | エーエスエム アメリカ インコーポレイテッド | 金属シリケート膜のald |
JP2010073867A (ja) * | 2008-09-18 | 2010-04-02 | Tokyo Electron Ltd | 半導体装置及び半導体装置の製造方法 |
US8227032B2 (en) | 2005-03-17 | 2012-07-24 | L'air Liquide Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude | Method of forming silicon oxide containing films |
JP2015159295A (ja) * | 2015-03-25 | 2015-09-03 | 株式会社日立国際電気 | 半導体デバイスの製造方法および基板処理装置 |
US9234275B2 (en) | 2012-12-11 | 2016-01-12 | Tokyo Electron Limited | Method and apparatus of forming metal compound film, and electronic product |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005317583A (ja) * | 2004-04-27 | 2005-11-10 | Renesas Technology Corp | 半導体装置およびその製造方法 |
JP4554330B2 (ja) * | 2004-10-21 | 2010-09-29 | 株式会社リコー | 高耐久性を有する断熱スタンパ構造 |
JP2006279019A (ja) * | 2005-03-03 | 2006-10-12 | Sony Corp | 薄膜の形成方法および半導体装置の製造方法 |
JP4762169B2 (ja) * | 2007-02-19 | 2011-08-31 | 富士通セミコンダクター株式会社 | 半導体装置の製造方法 |
KR100872799B1 (ko) * | 2007-09-11 | 2008-12-09 | 포항공과대학교 산학협력단 | 플라스마 원자층 증착법을 이용한 반도체 콘택트용 금속실리사이드 제조방법 |
JP2010034440A (ja) * | 2008-07-31 | 2010-02-12 | Toshiba Corp | 半導体装置及びその製造方法 |
US10304677B2 (en) | 2017-09-29 | 2019-05-28 | Taiwan Semiconductor Manufacturing Co., Ltd. | Low-k feature formation processes and structures formed thereby |
DE102018110837A1 (de) | 2017-09-29 | 2019-04-04 | Taiwan Semiconductor Manufacturing Co., Ltd. | Prozesse zur Bildung von Merkmalen mit einem niedrigen K-Wert und dadurch gebildete Aufbauten |
US11920256B2 (en) * | 2019-08-05 | 2024-03-05 | Nippon Telegraph And Telephone Corporation | Method for growing rare earth oxide crystal on a semiconductor substrate |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100269328B1 (ko) * | 1997-12-31 | 2000-10-16 | 윤종용 | 원자층 증착 공정을 이용하는 도전층 형성방법 |
JP2000058832A (ja) | 1998-07-15 | 2000-02-25 | Texas Instr Inc <Ti> | オキシ窒化ジルコニウム及び/又はハフニウム・ゲ―ト誘電体 |
US6308909B1 (en) | 1999-02-09 | 2001-10-30 | The Procter & Gamble Company | Web rewinder chop-off and transfer assembly |
US6479173B1 (en) * | 1999-12-17 | 2002-11-12 | Motorola, Inc. | Semiconductor structure having a crystalline alkaline earth metal silicon nitride/oxide interface with silicon |
KR100803770B1 (ko) * | 2000-03-07 | 2008-02-15 | 에이에스엠 인터내셔널 엔.브이. | 구배(graded)박막 |
JPWO2002023614A1 (ja) | 2000-09-18 | 2004-01-22 | 東京エレクトロン株式会社 | ゲート絶縁体の成膜方法、ゲート絶縁体の成膜装置、クラスターツール |
JP3792589B2 (ja) * | 2001-03-29 | 2006-07-05 | 富士通株式会社 | 半導体装置の製造方法 |
JP2003069011A (ja) | 2001-08-27 | 2003-03-07 | Hitachi Ltd | 半導体装置とその製造方法 |
JP4102072B2 (ja) | 2002-01-08 | 2008-06-18 | 株式会社東芝 | 半導体装置 |
US6586349B1 (en) * | 2002-02-21 | 2003-07-01 | Advanced Micro Devices, Inc. | Integrated process for fabrication of graded composite dielectric material layers for semiconductor devices |
US7163901B2 (en) | 2002-03-13 | 2007-01-16 | Varian Semiconductor Equipment Associates, Inc. | Methods for forming thin film layers by simultaneous doping and sintering |
EP1644983B1 (en) * | 2003-06-26 | 2008-10-29 | Mears Technologies, Inc. | Semiconductor device including mosfet having bandgap-engineered superlattice |
US6958486B2 (en) * | 2003-06-26 | 2005-10-25 | Rj Mears, Llc | Semiconductor device including band-engineered superlattice |
-
2003
- 2003-10-07 JP JP2003347931A patent/JP4059183B2/ja not_active Expired - Fee Related
-
2004
- 2004-10-04 US US10/957,948 patent/US7189660B2/en active Active
- 2004-10-06 DE DE102004048679.4A patent/DE102004048679B4/de not_active Expired - Fee Related
- 2004-10-06 KR KR1020040079501A patent/KR101078498B1/ko active IP Right Grant
- 2004-10-07 TW TW093130432A patent/TWI261879B/zh not_active IP Right Cessation
-
2006
- 2006-12-22 US US11/644,236 patent/US7473994B2/en active Active
-
2009
- 2009-01-06 US US12/349,374 patent/US7622401B2/en active Active
Cited By (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005191482A (ja) * | 2003-12-26 | 2005-07-14 | Semiconductor Leading Edge Technologies Inc | 半導体装置及びその製造方法 |
JP2006032948A (ja) * | 2004-07-10 | 2006-02-02 | Samsung Electronics Co Ltd | 複合誘電膜の形成方法、及びこれを用いる半導体装置の製造方法 |
JP4564310B2 (ja) * | 2004-09-01 | 2010-10-20 | 株式会社日立国際電気 | 半導体装置の製造方法 |
JP2006073758A (ja) * | 2004-09-01 | 2006-03-16 | Hitachi Kokusai Electric Inc | 半導体装置の製造方法 |
US8613976B2 (en) | 2005-03-17 | 2013-12-24 | L'Air Liquide, SociétéAnonyme pour l'Etude et l'Exploitation des Procédés Georges Claude | Method of forming silicon oxide containing films |
US8227032B2 (en) | 2005-03-17 | 2012-07-24 | L'air Liquide Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude | Method of forming silicon oxide containing films |
JP2007005365A (ja) * | 2005-06-21 | 2007-01-11 | Nec Electronics Corp | 高誘電率膜の成膜方法および半導体装置の製造方法 |
JP4554446B2 (ja) * | 2005-06-21 | 2010-09-29 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
JP2009514218A (ja) * | 2005-10-26 | 2009-04-02 | インターナショナル・ビジネス・マシーンズ・コーポレーション | 二重の閾値電圧制御手段を有する低閾値電圧の半導体デバイス |
KR101442212B1 (ko) * | 2006-07-21 | 2014-09-18 | 에이에스엠 아메리카, 인코포레이티드 | 금속 실리케이트 막들의 원자층 증착 |
JP2009545138A (ja) * | 2006-07-21 | 2009-12-17 | エーエスエム アメリカ インコーポレイテッド | 金属シリケート膜のald |
KR101505970B1 (ko) | 2006-07-21 | 2015-03-26 | 에이에스엠 아메리카, 인코포레이티드 | 금속 실리케이트 막들의 원자층 증착 |
JP2008205136A (ja) * | 2007-02-19 | 2008-09-04 | Rohm Co Ltd | 半導体装置及びその製造方法 |
JP2010073867A (ja) * | 2008-09-18 | 2010-04-02 | Tokyo Electron Ltd | 半導体装置及び半導体装置の製造方法 |
US9234275B2 (en) | 2012-12-11 | 2016-01-12 | Tokyo Electron Limited | Method and apparatus of forming metal compound film, and electronic product |
JP2015159295A (ja) * | 2015-03-25 | 2015-09-03 | 株式会社日立国際電気 | 半導体デバイスの製造方法および基板処理装置 |
Also Published As
Publication number | Publication date |
---|---|
US7622401B2 (en) | 2009-11-24 |
DE102004048679B4 (de) | 2016-09-01 |
KR20050033831A (ko) | 2005-04-13 |
TWI261879B (en) | 2006-09-11 |
US7473994B2 (en) | 2009-01-06 |
JP4059183B2 (ja) | 2008-03-12 |
US20050116266A1 (en) | 2005-06-02 |
US20090104788A1 (en) | 2009-04-23 |
TW200524043A (en) | 2005-07-16 |
US7189660B2 (en) | 2007-03-13 |
US20070105398A1 (en) | 2007-05-10 |
DE102004048679A1 (de) | 2005-05-12 |
KR101078498B1 (ko) | 2011-10-31 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US7622401B2 (en) | Method of producing insulator thin film, insulator thin film, method of manufacturing semiconductor device, and semiconductor device | |
US6303481B2 (en) | Method for forming a gate insulating film for semiconductor devices | |
KR101282343B1 (ko) | 금속게이트를 갖는 반도체장치 및 그 제조 방법 | |
CN103069552B (zh) | 包括具有在其侧壁上增强的氮浓度的SiON栅电介质的MOS晶体管 | |
US9224594B2 (en) | Surface preparation with remote plasma | |
US7037816B2 (en) | System and method for integration of HfO2 and RTCVD poly-silicon | |
JP2007524994A (ja) | 低eotプラズマ窒化ゲート誘電体用の2ステップポスト窒化アニ−リング | |
JP4887604B2 (ja) | 半導体装置の製造方法 | |
US7939396B2 (en) | Base oxide engineering for high-K gate stacks | |
JP5050351B2 (ja) | 半導体装置の製造方法 | |
KR20110100480A (ko) | 식각액, 식각액을 사용한 게이트 절연막의 형성 방법 및 식각액을 사용한 반도체 소자의 제조 방법 | |
WO2004107451A1 (ja) | Mis型電界効果トランジスタを備える半導体装置及びその製造方法並びに金属酸化膜の形成方法 | |
JP2007123662A (ja) | 半導体装置の製造方法および半導体装置 | |
JP3540234B2 (ja) | 半導体装置の製造方法 | |
JP4639000B2 (ja) | Mis型半導体装置及びその製造方法 | |
JP2004247474A (ja) | 半導体装置及びその製造方法並びに成膜方法 | |
KR100680970B1 (ko) | 반도체 소자의 게이트 형성방법 | |
JP2006019615A (ja) | 半導体装置及びその製造方法 | |
JP2005079563A (ja) | 電子デバイスの製造方法 | |
JP4719422B2 (ja) | 半導体装置の製造方法 | |
JP5141321B2 (ja) | 半導体装置の製造方法 | |
KR100650758B1 (ko) | 반도체 소자의 게이트 형성방법 | |
JP2006253267A (ja) | 半導体装置の製造方法および半導体装置 | |
JP2005277318A (ja) | 高誘電体薄膜を備えた半導体装置及びその製造方法 | |
KR100650757B1 (ko) | 반도체 소자의 게이트 형성방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20050223 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20061130 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20061212 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20070209 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20070612 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20070810 |
|
A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20070904 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20071127 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20071210 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20101228 Year of fee payment: 3 |
|
R151 | Written notification of patent or utility model registration |
Ref document number: 4059183 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R151 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20111228 Year of fee payment: 4 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20121228 Year of fee payment: 5 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20131228 Year of fee payment: 6 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |