CN105280503B - 提高横向导电结构 SiC MOSFET 沟道迁移率的方法 - Google Patents
提高横向导电结构 SiC MOSFET 沟道迁移率的方法 Download PDFInfo
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- CN105280503B CN105280503B CN201510486182.2A CN201510486182A CN105280503B CN 105280503 B CN105280503 B CN 105280503B CN 201510486182 A CN201510486182 A CN 201510486182A CN 105280503 B CN105280503 B CN 105280503B
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- 238000000034 method Methods 0.000 title claims abstract description 56
- 230000037230 mobility Effects 0.000 title description 16
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 38
- 229910052681 coesite Inorganic materials 0.000 claims abstract description 33
- 229910052906 cristobalite Inorganic materials 0.000 claims abstract description 33
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 33
- 229910052682 stishovite Inorganic materials 0.000 claims abstract description 33
- 229910052905 tridymite Inorganic materials 0.000 claims abstract description 33
- 235000012431 wafers Nutrition 0.000 claims abstract description 23
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 21
- 239000001301 oxygen Substances 0.000 claims abstract description 21
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 21
- 238000002347 injection Methods 0.000 claims abstract description 18
- 239000007924 injection Substances 0.000 claims abstract description 18
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims abstract description 16
- 238000000137 annealing Methods 0.000 claims abstract description 11
- 238000005516 engineering process Methods 0.000 claims abstract description 11
- 238000000407 epitaxy Methods 0.000 claims abstract description 9
- 230000003647 oxidation Effects 0.000 claims abstract description 9
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 9
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 7
- 229920005591 polysilicon Polymers 0.000 claims abstract description 7
- 229910052751 metal Inorganic materials 0.000 claims abstract description 6
- 239000002184 metal Substances 0.000 claims abstract description 6
- 125000006850 spacer group Chemical group 0.000 claims abstract description 6
- 238000002203 pretreatment Methods 0.000 claims abstract description 4
- 238000002513 implantation Methods 0.000 claims description 26
- 239000000243 solution Substances 0.000 claims description 25
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 18
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 17
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 15
- 229910052757 nitrogen Inorganic materials 0.000 claims description 11
- 239000011259 mixed solution Substances 0.000 claims description 9
- 238000004140 cleaning Methods 0.000 claims description 7
- 239000007789 gas Substances 0.000 claims description 7
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 6
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 6
- -1 Nitrogen ion Chemical class 0.000 claims description 6
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 claims description 6
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 6
- 239000012298 atmosphere Substances 0.000 claims description 6
- 239000008367 deionised water Substances 0.000 claims description 6
- 229910021641 deionized water Inorganic materials 0.000 claims description 6
- 229910000077 silane Inorganic materials 0.000 claims description 6
- REDXJYDRNCIFBQ-UHFFFAOYSA-N aluminium(3+) Chemical compound [Al+3] REDXJYDRNCIFBQ-UHFFFAOYSA-N 0.000 claims description 4
- 239000000203 mixture Substances 0.000 claims description 4
- 235000011114 ammonium hydroxide Nutrition 0.000 claims description 3
- 239000007788 liquid Substances 0.000 claims description 3
- 239000001294 propane Substances 0.000 claims description 3
- 239000000758 substrate Substances 0.000 claims description 3
- QAOWNCQODCNURD-UHFFFAOYSA-N sulfuric acid Substances OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 3
- 239000000376 reactant Substances 0.000 claims description 2
- 230000035484 reaction time Effects 0.000 claims description 2
- 230000015572 biosynthetic process Effects 0.000 claims 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 39
- 229910010271 silicon carbide Inorganic materials 0.000 description 39
- 230000008569 process Effects 0.000 description 14
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- 150000002500 ions Chemical class 0.000 description 7
- 125000004432 carbon atom Chemical group C* 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 238000001259 photo etching Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 230000005669 field effect Effects 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- 229910003465 moissanite Inorganic materials 0.000 description 3
- 230000001590 oxidative effect Effects 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 1
- 229910001069 Ti alloy Inorganic materials 0.000 description 1
- 150000001335 aliphatic alkanes Chemical class 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen(.) Chemical compound [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
- H01L29/66068—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Electrodes Of Semiconductors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
Description
Claims (8)
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CN201510486182.2A CN105280503B (zh) | 2015-08-07 | 2015-08-07 | 提高横向导电结构 SiC MOSFET 沟道迁移率的方法 |
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CN201510486182.2A CN105280503B (zh) | 2015-08-07 | 2015-08-07 | 提高横向导电结构 SiC MOSFET 沟道迁移率的方法 |
Publications (2)
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CN105280503A CN105280503A (zh) | 2016-01-27 |
CN105280503B true CN105280503B (zh) | 2017-12-01 |
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Families Citing this family (3)
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US20200027716A1 (en) * | 2016-09-26 | 2020-01-23 | Zf Friedrichshafen Ag | Method of Manufacturing an Insulation Layer on Silicon Carbide and Semiconductor Device |
CN110199380B (zh) * | 2017-01-17 | 2023-03-28 | Zf 腓德烈斯哈芬股份公司 | 在碳化硅上制造绝缘层的方法 |
CN108766887B (zh) | 2018-05-25 | 2019-07-30 | 中国科学院微电子研究所 | 基于两步微波等离子体氧化的凹槽mosfet器件的制造方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6841436B2 (en) * | 2001-10-15 | 2005-01-11 | Denso Corporation | Method of fabricating SiC semiconductor device |
CN102779852A (zh) * | 2012-07-18 | 2012-11-14 | 电子科技大学 | 一种具有复合栅介质结构的SiC VDMOS器件 |
CN103730359A (zh) * | 2013-10-09 | 2014-04-16 | 西安电子科技大学 | 复合栅介质SiC MISFET器件的制作方法 |
Family Cites Families (1)
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US7122488B2 (en) * | 2004-03-15 | 2006-10-17 | Sharp Laboratories Of America, Inc. | High density plasma process for the formation of silicon dioxide on silicon carbide substrates |
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- 2015-08-07 CN CN201510486182.2A patent/CN105280503B/zh active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6841436B2 (en) * | 2001-10-15 | 2005-01-11 | Denso Corporation | Method of fabricating SiC semiconductor device |
CN102779852A (zh) * | 2012-07-18 | 2012-11-14 | 电子科技大学 | 一种具有复合栅介质结构的SiC VDMOS器件 |
CN103730359A (zh) * | 2013-10-09 | 2014-04-16 | 西安电子科技大学 | 复合栅介质SiC MISFET器件的制作方法 |
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Effective date of registration: 20220608 Address after: No. 518, Linjiang Road, Gaobu Town, Yuecheng District, Shaoxing City, Zhejiang Province Patentee after: Shaoxing SMIC integrated circuit manufacturing Co.,Ltd. Address before: 710071 Taibai South Road, Yanta District, Xi'an, Shaanxi Province, No. 2 Patentee before: XIDIAN University |
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Effective date of registration: 20231215 Address after: Room 203-18, Building 1, No. 1433 Renmin East Road, Gaobu Street, Yuecheng District, Shaoxing City, Zhejiang Province, 312035 Patentee after: Xinlian Power Technology (Shaoxing) Co.,Ltd. Address before: No. 518, Linjiang Road, Gaobu Town, Yuecheng District, Shaoxing City, Zhejiang Province Patentee before: Shaoxing SMIC integrated circuit manufacturing Co.,Ltd. |
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