KR100317620B1 - 실리콘박막을결정화하는방법과이를이용한박막트랜지스터제조방법 - Google Patents
실리콘박막을결정화하는방법과이를이용한박막트랜지스터제조방법 Download PDFInfo
- Publication number
- KR100317620B1 KR100317620B1 KR1019980056447A KR19980056447A KR100317620B1 KR 100317620 B1 KR100317620 B1 KR 100317620B1 KR 1019980056447 A KR1019980056447 A KR 1019980056447A KR 19980056447 A KR19980056447 A KR 19980056447A KR 100317620 B1 KR100317620 B1 KR 100317620B1
- Authority
- KR
- South Korea
- Prior art keywords
- thin film
- amorphous silicon
- silicon thin
- metal
- crystallizing
- Prior art date
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 145
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 51
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 51
- 239000010703 silicon Substances 0.000 title claims abstract description 51
- 238000000034 method Methods 0.000 title claims abstract description 42
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 21
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 86
- 239000002184 metal Substances 0.000 claims abstract description 53
- 229910052751 metal Inorganic materials 0.000 claims abstract description 53
- 238000002425 crystallisation Methods 0.000 claims abstract description 33
- 230000008025 crystallization Effects 0.000 claims abstract description 30
- 229910021332 silicide Inorganic materials 0.000 claims abstract description 22
- 238000000151 deposition Methods 0.000 claims abstract description 17
- 239000000758 substrate Substances 0.000 claims abstract description 16
- 239000003054 catalyst Substances 0.000 claims abstract description 13
- 239000007769 metal material Substances 0.000 claims abstract description 9
- 238000005530 etching Methods 0.000 claims abstract description 5
- 239000010408 film Substances 0.000 claims description 17
- 229910045601 alloy Inorganic materials 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims description 3
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 229910052741 iridium Inorganic materials 0.000 claims description 3
- 229910052742 iron Inorganic materials 0.000 claims description 3
- 229910052748 manganese Inorganic materials 0.000 claims description 3
- 229910052762 osmium Inorganic materials 0.000 claims description 3
- 229910052763 palladium Inorganic materials 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 229910052703 rhodium Inorganic materials 0.000 claims description 3
- 229910052707 ruthenium Inorganic materials 0.000 claims description 3
- 229910052706 scandium Inorganic materials 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 229910052720 vanadium Inorganic materials 0.000 claims description 3
- 229910052725 zinc Inorganic materials 0.000 claims description 3
- 238000004140 cleaning Methods 0.000 claims description 2
- 238000001259 photo etching Methods 0.000 claims description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 abstract description 17
- 238000011109 contamination Methods 0.000 abstract description 7
- 239000000463 material Substances 0.000 abstract description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 18
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 15
- 229910052759 nickel Inorganic materials 0.000 description 7
- 238000010438 heat treatment Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 230000006698 induction Effects 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 239000011856 silicon-based particle Substances 0.000 description 2
- 206010010144 Completed suicide Diseases 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 239000002923 metal particle Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 229910021334 nickel silicide Inorganic materials 0.000 description 1
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02672—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using crystallisation enhancing elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
- H01L29/66757—Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78651—Silicon transistors
- H01L29/7866—Non-monocrystalline silicon transistors
- H01L29/78672—Polycrystalline or microcrystalline silicon transistor
- H01L29/78675—Polycrystalline or microcrystalline silicon transistor with normal-type structure, e.g. with top gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Recrystallisation Techniques (AREA)
- Thin Film Transistor (AREA)
Abstract
Description
Claims (8)
- 기판 상에 비정질 실리콘 박막을 증착하는 공정과,상기 비정질 실리콘 박막 상에 실리콘 결정화 촉매로 작용하는 금속박막을 증착하여 상기 비정질 실리콘 박막과 상기 금속박막이 반응되어 계면에 금속-실리사이드가 형성되도록 하는 공정과,상기 비정질 실리콘 박막과 반응되지 않은 상기 금속박막을 제거하는 공정과,상기 비정질 실리콘 박막의 소정 부분을 표면으로부터 소정의 두께만큼 제거하여 활성영역을 한정하는 공정과,상기 활성영역을 포함하는 상기 비정질 실리콘 박막을 결정화하는 공정을 포함하는 실리콘 박막을 결정화하는 방법.
- 청구항 1에 있어서,상기 금속박막은 NI, Cu, Fe, Co, Ru, Rh, Pd, Os, Ir, Pt, Sc, Ti, V, Cr, Mn, Zn, Au, Ag 등의 금속물질 혹은, 이들의 합금으로 형성하는 비정질 실리콘 박막을 결정화하는 방법.
- 청구항 1에 있어서,상기 비정질 실리콘 박막을 50∼500Å의 두께로 식각하여 제거하는 실리콘 박막을 결정화하는 방법.
- 청구항 1에 있어서,상기 금속박막을 증착하기 전에 상기 비정질 실리콘 박막의 표면을 세정하는 공정을 더 포함하는 실리콘 박막을 결정화하는 방법.
- 기판 상에 비정질 실리콘 박막을 증착하는 공정과,상기 비정질 실리콘 박막 상에 실리콘 결정화 촉매로 작용하는 금속박막을 증착하여 상기 비정질 실리콘 박막과 상기 금속박막이 반응되어 계면에 금속-실리사이드가 형성되도록 하는 공정과,상기 비정질 실리콘 박막과 반응되지 않은 상기 금속박막을 제거하는 공정과,상기 비정질 실리콘 박막의 소정 부분을 표면으로부터 소정 두께만큼 제거하여 활성영역을 한정하는 공정과,상기 활성영역을 포함하는 상기 비정질 실리콘 박막을 결정화하는 공정과,상기 결정화된 실리콘 박막을 상기 활성영역에만 잔류하도록 사진식각하여 활성층을 형성하는 공정과,상기 활성층 상에 게이트절연막을 개재하는 게이트전극을 형성하는 공정과,상기 활성층에 소오스영역과 드레인영역을 형성하는 공정을 포함하는 박막트랜지스터 제조방법.
- 청구항 5에 있어서,상기 금속박막은 NI, Cu, Fe, Co, Ru, Rh, Pd, Os, Ir, Pt, Sc, Ti, V, Cr, Mn, Zn, Au, Ag 등의 금속물질 혹은, 이들의 합금으로 형성하는 박막트랜지스터 제조방법.
- 청구항 5에 있어서,상기 비정질 실리콘 박막을 50∼500Å의 두께로 식각하여 제거하는 박막트랜지스터 제조방법.
- 청구항 8에 있어서,상기 금속박막을 증착하기 전에 상기 비정질 실리콘 박막의 표면을 세정하는 공정을 더 포함하는 박막트랜지스터 제조방법.
Priority Applications (1)
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KR1019980056447A KR100317620B1 (ko) | 1998-12-19 | 1998-12-19 | 실리콘박막을결정화하는방법과이를이용한박막트랜지스터제조방법 |
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KR1019980056447A KR100317620B1 (ko) | 1998-12-19 | 1998-12-19 | 실리콘박막을결정화하는방법과이를이용한박막트랜지스터제조방법 |
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KR20000040728A KR20000040728A (ko) | 2000-07-05 |
KR100317620B1 true KR100317620B1 (ko) | 2002-06-20 |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100873661B1 (ko) | 2007-07-10 | 2008-12-12 | 한국기계연구원 | 금속 촉매 성장을 이용한 박막 실리콘 형성 방법과 그방법에 의해 제조된 박막 실리콘을 이용한 전자소자 |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100715908B1 (ko) * | 2000-12-29 | 2007-05-08 | 엘지.필립스 엘시디 주식회사 | 박막 트랜지스터 및 그 제조방법 |
KR20020076791A (ko) * | 2001-03-30 | 2002-10-11 | 주승기 | 실리콘 박막의 결정화 방법 및 이를 이용한박막트랜지스터 제조 방법 |
KR100437474B1 (ko) * | 2001-04-04 | 2004-06-23 | 삼성에스디아이 주식회사 | 듀얼채널층을 갖는 박막 트랜지스터 및 그의 제조방법 |
KR100458714B1 (ko) * | 2001-11-06 | 2004-12-03 | 네오폴리((주)) | Oeld용 결정질 실리콘 박막트랜지스터 패널 및 제작방법 |
KR100418217B1 (ko) * | 2001-12-27 | 2004-02-14 | 엘지.필립스 엘시디 주식회사 | 폴리실리콘 박막트랜지스터 제조방법 |
KR20030058543A (ko) * | 2001-12-31 | 2003-07-07 | 비오이 하이디스 테크놀로지 주식회사 | 다결정질 실리콘 박막 트랜지스터의 제조 방법 |
KR100488958B1 (ko) * | 2002-03-08 | 2005-05-11 | 비오이 하이디스 테크놀로지 주식회사 | 다결정 실리콘 박막트랜지스터의 제조 방법 |
KR100530041B1 (ko) * | 2003-03-28 | 2005-11-22 | 주승기 | 니켈 합금층을 이용한 다결정 실리콘 박막 형성방법 및이를 이용한 박막 트랜지스터의 제조방법 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07153689A (ja) * | 1993-06-22 | 1995-06-16 | Semiconductor Energy Lab Co Ltd | 半導体およびその作製方法 |
KR970060391A (ko) * | 1996-01-19 | 1997-08-12 | 순페이 야마자키 | 반도체장치 및 그 제작방법 |
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1998
- 1998-12-19 KR KR1019980056447A patent/KR100317620B1/ko not_active IP Right Cessation
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH07153689A (ja) * | 1993-06-22 | 1995-06-16 | Semiconductor Energy Lab Co Ltd | 半導体およびその作製方法 |
KR970060391A (ko) * | 1996-01-19 | 1997-08-12 | 순페이 야마자키 | 반도체장치 및 그 제작방법 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100873661B1 (ko) | 2007-07-10 | 2008-12-12 | 한국기계연구원 | 금속 촉매 성장을 이용한 박막 실리콘 형성 방법과 그방법에 의해 제조된 박막 실리콘을 이용한 전자소자 |
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