KR100488958B1 - 다결정 실리콘 박막트랜지스터의 제조 방법 - Google Patents
다결정 실리콘 박막트랜지스터의 제조 방법 Download PDFInfo
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- KR100488958B1 KR100488958B1 KR10-2002-0012456A KR20020012456A KR100488958B1 KR 100488958 B1 KR100488958 B1 KR 100488958B1 KR 20020012456 A KR20020012456 A KR 20020012456A KR 100488958 B1 KR100488958 B1 KR 100488958B1
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- South Korea
- Prior art keywords
- metal
- gate insulating
- insulating film
- depositing
- crystallization
- Prior art date
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- 238000000034 method Methods 0.000 title claims abstract description 27
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 22
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 15
- 229910052751 metal Inorganic materials 0.000 claims abstract description 50
- 239000002184 metal Substances 0.000 claims abstract description 50
- 238000002425 crystallisation Methods 0.000 claims abstract description 31
- 239000010408 film Substances 0.000 claims abstract description 30
- 230000008025 crystallization Effects 0.000 claims abstract description 26
- 239000010409 thin film Substances 0.000 claims abstract description 22
- 238000005530 etching Methods 0.000 claims abstract description 18
- 238000000151 deposition Methods 0.000 claims abstract description 14
- 238000000206 photolithography Methods 0.000 claims abstract description 13
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 12
- 238000010438 heat treatment Methods 0.000 claims abstract description 9
- 238000000059 patterning Methods 0.000 claims abstract description 9
- 239000011521 glass Substances 0.000 claims abstract description 8
- 239000000758 substrate Substances 0.000 claims abstract description 8
- 238000005468 ion implantation Methods 0.000 claims abstract description 6
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 8
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 8
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 4
- 229910052786 argon Inorganic materials 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 239000010949 copper Substances 0.000 claims description 4
- 239000007789 gas Substances 0.000 claims description 4
- 239000001307 helium Substances 0.000 claims description 4
- 229910052734 helium Inorganic materials 0.000 claims description 4
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 4
- 239000001257 hydrogen Substances 0.000 claims description 4
- 229910052739 hydrogen Inorganic materials 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims description 4
- 229910052763 palladium Inorganic materials 0.000 claims description 4
- 229910017052 cobalt Inorganic materials 0.000 claims description 2
- 239000010941 cobalt Substances 0.000 claims description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 2
- 238000005224 laser annealing Methods 0.000 claims description 2
- 238000011109 contamination Methods 0.000 abstract description 3
- 238000005516 engineering process Methods 0.000 abstract description 3
- 230000015572 biosynthetic process Effects 0.000 abstract description 2
- 239000012535 impurity Substances 0.000 description 6
- 230000005669 field effect Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 238000007792 addition Methods 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 230000004941 influx Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
- H01L29/78621—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02672—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using crystallisation enhancing elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42384—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
- H01L29/66757—Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78651—Silicon transistors
- H01L29/7866—Non-monocrystalline silicon transistors
- H01L29/78672—Polycrystalline or microcrystalline silicon transistor
- H01L29/78675—Polycrystalline or microcrystalline silicon transistor with normal-type structure, e.g. with top gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
- H01L21/02686—Pulsed laser beam
Abstract
Description
Claims (5)
- 유리 기판 위에 비정질 실리콘을 증착한 후, 포토리소그라피와 식각공정을 이용하여 액티브 영역을 패터닝하는 단계와,상기 구조물 위에 제 1 게이트 절연막을 증착한 후, 포토리소그라피와 식각을 이용하여 상기 제 1 게이트 절연막을 패터닝하는 단계와,상기 구조물 위에 금속유도 측면결정화를 위한 금속을 증착한 후, 소오스/드레인 영역에 이온주입을 진행한 다음 열처리하여, 채널 영역은 금속유도 측면결정화를 진행하고, 소오스/드레인 영역은 금속유도 결정화를 진행하는 단계와,상기 제 1 게이트 절연막을 건식 및 식각 공정을 이용하여 제거하는 단계와,상기 구조물 위에 제 2 게이트 절연막과 게이트 전극용 층을 연속으로 증착한 후, 포토리소그라피와 식각 공정을 이용하여 상기 제 2 게이트 절연막 패턴 및 게이트 전극을 형성하되, 이와 동시에 상기 게이트 전극 및 상기 제 2게이트 절연막 패턴 폭을 조절하여 오프셋을 정의하는 단계를 구비한 것을 특징으로 하는 다결정 실리콘 박막트랜지스터의 제조 방법.
- 제 1 항에 있어서,상기 열처리는 약 300∼800℃의 온도와 일정 가스분위기(수소 또는 헬륨, 아르곤, 질소)에서 수시간 열처리하는 것을 특징으로 하는 다결정 실리콘 박막트랜지스터의 제조 방법.
- 제 2 항에 있어서,상기 열처리는 관상로 또는 엑시머레이저 어닐링법으로 실시하는 것을 특징으로 하는 다결정 실리콘 박막트랜지스터의 제조 방법.
- 제 1 항에 있어서,상기 금속은 니켈, 패러디움, 구리, 코발트 중 하나를 사용하여 0.1∼1000Å 두께로 형성하는 것을 특징으로 하는 다결정 실리콘 박막트랜지스터의 제조 방법.
- 삭제
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KR10-2002-0012456A KR100488958B1 (ko) | 2002-03-08 | 2002-03-08 | 다결정 실리콘 박막트랜지스터의 제조 방법 |
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KR10-2002-0012456A KR100488958B1 (ko) | 2002-03-08 | 2002-03-08 | 다결정 실리콘 박막트랜지스터의 제조 방법 |
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KR20030073075A KR20030073075A (ko) | 2003-09-19 |
KR100488958B1 true KR100488958B1 (ko) | 2005-05-11 |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101035752B1 (ko) * | 2005-11-30 | 2011-05-20 | 사천홍시현시기건유한공사 | 다결정 실리콘 박막 트랜지스터 및 그 제조방법 |
WO2024075923A1 (ko) * | 2022-10-06 | 2024-04-11 | 삼성디스플레이 주식회사 | 박막트랜지스터, 트랜지스터 어레이 기판 및 트랜지스터 어레이 기판의 제조 방법 |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100751315B1 (ko) * | 2004-01-10 | 2007-08-22 | 삼성에스디아이 주식회사 | 박막 트랜지스터, 박막 트랜지스터 제조 방법 및 이를구비한 평판 디스플레이 소자 |
KR100889626B1 (ko) | 2007-08-22 | 2009-03-20 | 삼성모바일디스플레이주식회사 | 박막트랜지스터, 그의 제조방법, 이를 구비한유기전계발광표시장치, 및 그의 제조방법 |
KR100889627B1 (ko) | 2007-08-23 | 2009-03-20 | 삼성모바일디스플레이주식회사 | 박막트랜지스터, 그의 제조방법, 및 이를 구비한유기전계발광표시장치 |
KR100982310B1 (ko) | 2008-03-27 | 2010-09-15 | 삼성모바일디스플레이주식회사 | 박막트랜지스터, 그의 제조방법, 및 이를 포함하는유기전계발광표시장치 |
KR101002666B1 (ko) | 2008-07-14 | 2010-12-21 | 삼성모바일디스플레이주식회사 | 박막트랜지스터, 그의 제조방법, 및 이를 포함하는유기전계발광표시장치 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0992839A (ja) * | 1995-09-28 | 1997-04-04 | Nec Corp | 薄膜トランジスタおよびその製造方法 |
KR100186886B1 (ko) * | 1993-05-26 | 1999-04-15 | 야마자끼 승페이 | 반도체장치 제작방법 |
KR20000040728A (ko) * | 1998-12-19 | 2000-07-05 | 구본준 | 실리콘 박막을 결정화하는 방법과 이를 이용한 박막트랜지스터제조방법 |
KR20020076625A (ko) * | 2001-03-29 | 2002-10-11 | 삼성에스디아이 주식회사 | 금속유도화 측면결정화방법을 이용한 박막 트랜지스터의제조방법 |
-
2002
- 2002-03-08 KR KR10-2002-0012456A patent/KR100488958B1/ko active IP Right Grant
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100186886B1 (ko) * | 1993-05-26 | 1999-04-15 | 야마자끼 승페이 | 반도체장치 제작방법 |
JPH0992839A (ja) * | 1995-09-28 | 1997-04-04 | Nec Corp | 薄膜トランジスタおよびその製造方法 |
KR20000040728A (ko) * | 1998-12-19 | 2000-07-05 | 구본준 | 실리콘 박막을 결정화하는 방법과 이를 이용한 박막트랜지스터제조방법 |
KR20020076625A (ko) * | 2001-03-29 | 2002-10-11 | 삼성에스디아이 주식회사 | 금속유도화 측면결정화방법을 이용한 박막 트랜지스터의제조방법 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101035752B1 (ko) * | 2005-11-30 | 2011-05-20 | 사천홍시현시기건유한공사 | 다결정 실리콘 박막 트랜지스터 및 그 제조방법 |
WO2024075923A1 (ko) * | 2022-10-06 | 2024-04-11 | 삼성디스플레이 주식회사 | 박막트랜지스터, 트랜지스터 어레이 기판 및 트랜지스터 어레이 기판의 제조 방법 |
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