JP2017046016A - 半導体チップ - Google Patents
半導体チップ Download PDFInfo
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- JP2017046016A JP2017046016A JP2016236397A JP2016236397A JP2017046016A JP 2017046016 A JP2017046016 A JP 2017046016A JP 2016236397 A JP2016236397 A JP 2016236397A JP 2016236397 A JP2016236397 A JP 2016236397A JP 2017046016 A JP2017046016 A JP 2017046016A
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7816—Lateral DMOS transistors, i.e. LDMOS transistors
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- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
- H01L29/7836—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's with a significant overlap between the lightly doped extension and the gate electrode
Abstract
【解決手段】 パンチスルー抑制構成を備えた先端トランジスタは、長さLgを有するゲートと、第1濃度のドーパントを有するようにドープされたウェルと、ゲートの下方に位置し且つ第2濃度のドーパントを有するスクリーン領域とを含む。第2濃度のドーパントは5×1018ドーパント原子/cm3より高いとし得る。少なくとも1つのパンチスルー抑制領域が、ゲートの下方且つスクリーン領域とウェルとの間に配設される。パンチスルー抑制領域は、第1濃度と第2濃度との間の第3濃度のドーパントを有する。トランジスタの閾値電圧を調整するために、ウェル領域にバイアス電圧が印加され得る。
【選択図】 図1
Description
Claims (8)
- 半導体上に形成され、ゲート電極とソースおよびドレインを有する複数のトランジスタとを含み、
前記複数のトランジスタのうちの少なくとも1つのトランジスタは、前記ゲート電極の下方で前記ソースと前記ドレインの間に延在する複数の不純物領域を有し、前記複数の不純物領域はP型又はN型の不純物分布を形成し、前記不純物分布は前記ゲート電極の下方の第1の深さに第1の濃度を有し、前記ゲート電極の下方で前記第1の深さより浅い第2の深さに、前記第1の濃度より低い第2の濃度を有し、また、
前記複数のトランジスタの各々は、共通のアンドープエピタキシャル膜で形成されたチャネル領域を有し、前記チャネル領域は閾値電圧調整領域の上に形成されており、前記閾値電圧調整領域は前記第2の濃度に関係すること、
を特徴とする半導体チップ。 - 前記不純物分布は、前記第1の深さより浅く前記第2の深さより深い位置に第1のノッチを有することを特徴とする請求項1に記載の半導体チップ。
- 前記不純物分布のうちの前記第1の濃度の分布は、前記トランジスタの空乏層領域を確定するスクリーン領域を成すことを特徴とする請求項1または2に記載の半導体チップ。
- 前記第1の深さは、前記トランジスタのゲート長より浅く、前記ゲート長の1/5より深いことを特徴とする請求項1乃至3のいずれか一項に記載の半導体チップ。
- 前記不純物分布は更に、前記ゲート電極の下方で前記第1の深さより深い第3の深さに、前記第1の濃度より低く前記第2の濃度より高い第3の濃度を有することを特徴とする請求項1乃至4のいずれか一項に記載の半導体チップ。
- 前記不純物分布は、前記第1の深さより深く前記第3の深さより浅い位置に第2のノッチを有することを特徴とする請求項5に記載の半導体チップ。
- 前記不純物分布のうちの前記第3の濃度の分布は、前記トランジスタのパンチスルー抑制領域を成すことを特徴とする請求項5または6に記載の半導体チップ。
- 前記ソース及び前記ドレインのうちの一方の横方向外側で前記トランジスタのボディ内に注入形成され、前記第1の濃度の分布が成す領域の下方にあって該領域と電気的に接触した前記トランジスタのボディにバイアス電圧を選択的に印加するボディタップを更に有することを特徴とする請求項1乃至7のいずれか一項に記載の半導体チップ。
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JP2002198529A (ja) * | 2000-10-18 | 2002-07-12 | Hitachi Ltd | 半導体装置およびその製造方法 |
JP2004047933A (ja) * | 2002-07-12 | 2004-02-12 | Samsung Electronics Co Ltd | 統合領域を有する半導体素子及びその製造方法 |
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US20130181298A1 (en) | 2013-07-18 |
CN105070716B (zh) | 2018-12-18 |
JP2013533624A (ja) | 2013-08-22 |
KR20130088134A (ko) | 2013-08-07 |
US10325986B2 (en) | 2019-06-18 |
JP6371822B2 (ja) | 2018-08-08 |
CN105070716A (zh) | 2015-11-18 |
KR101817376B1 (ko) | 2018-01-11 |
KR101919737B1 (ko) | 2018-11-16 |
TW201205811A (en) | 2012-02-01 |
US20140167156A1 (en) | 2014-06-19 |
US9508800B2 (en) | 2016-11-29 |
US20110121404A1 (en) | 2011-05-26 |
WO2011163169A1 (en) | 2011-12-29 |
CN103038721A (zh) | 2013-04-10 |
US20170040419A1 (en) | 2017-02-09 |
US20160181370A1 (en) | 2016-06-23 |
US9263523B2 (en) | 2016-02-16 |
CN103038721B (zh) | 2015-08-19 |
KR20180005739A (ko) | 2018-01-16 |
TWI543369B (zh) | 2016-07-21 |
US8421162B2 (en) | 2013-04-16 |
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