JP2008235568A - 半導体装置およびその製造方法 - Google Patents
半導体装置およびその製造方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 34
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 18
- 239000013078 crystal Substances 0.000 claims abstract description 75
- 239000012535 impurity Substances 0.000 claims abstract description 67
- 125000001475 halogen functional group Chemical group 0.000 claims abstract description 51
- 239000000758 substrate Substances 0.000 claims abstract description 45
- 238000000034 method Methods 0.000 claims description 18
- 239000007790 solid phase Substances 0.000 claims description 14
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims description 13
- 238000010438 heat treatment Methods 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 5
- 230000000694 effects Effects 0.000 abstract description 9
- 239000010410 layer Substances 0.000 description 60
- 238000002513 implantation Methods 0.000 description 17
- 125000006850 spacer group Chemical group 0.000 description 16
- 229910021332 silicide Inorganic materials 0.000 description 15
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 15
- 239000002184 metal Substances 0.000 description 12
- 229910052751 metal Inorganic materials 0.000 description 12
- 229910004298 SiO 2 Inorganic materials 0.000 description 10
- 239000002243 precursor Substances 0.000 description 10
- 150000002500 ions Chemical class 0.000 description 8
- 238000004151 rapid thermal annealing Methods 0.000 description 8
- 239000002994 raw material Substances 0.000 description 8
- 238000005530 etching Methods 0.000 description 7
- 238000002955 isolation Methods 0.000 description 7
- 238000005468 ion implantation Methods 0.000 description 5
- 238000001020 plasma etching Methods 0.000 description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 4
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 4
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 4
- 229910052785 arsenic Inorganic materials 0.000 description 4
- BUMGIEFFCMBQDG-UHFFFAOYSA-N dichlorosilicon Chemical compound Cl[Si]Cl BUMGIEFFCMBQDG-UHFFFAOYSA-N 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 238000002109 crystal growth method Methods 0.000 description 3
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 239000012808 vapor phase Substances 0.000 description 3
- 229910002441 CoNi Inorganic materials 0.000 description 2
- 229910052691 Erbium Inorganic materials 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 229910052769 Ytterbium Inorganic materials 0.000 description 2
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 229910052787 antimony Inorganic materials 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 239000011259 mixed solution Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229910052727 yttrium Inorganic materials 0.000 description 2
- 229910004129 HfSiO Inorganic materials 0.000 description 1
- -1 NiPt Inorganic materials 0.000 description 1
- 229910004541 SiN Inorganic materials 0.000 description 1
- 238000001015 X-ray lithography Methods 0.000 description 1
- 229910006501 ZrSiO Inorganic materials 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 238000010306 acid treatment Methods 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000005380 borophosphosilicate glass Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- ZOCHARZZJNPSEU-UHFFFAOYSA-N diboron Chemical compound B#B ZOCHARZZJNPSEU-UHFFFAOYSA-N 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000000609 electron-beam lithography Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
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Abstract
【解決手段】本発明の一態様に係る半導体装置は、Si基板と、前記Si基板上にゲート絶縁膜を介して形成されたゲート電極と、前記Si基板の前記ゲート電極の下方に形成されたチャネル領域と、前記チャネル領域を挟んで形成されたソース・ドレイン領域と、前記チャネル領域を挟んで形成され、導電型不純物を含まない第1のエピタキシャル成長結晶からなるエピタキシャル層と、前記チャネル領域と前記エピタキシャル層の間に形成され、導電型不純物を含む第2のエピタキシャル成長結晶からなる、前記ソース・ドレイン領域と異なる導電型のハロー領域と、を有する。
【選択図】図1
Description
(半導体装置の構成)
図1は、本発明の第1の実施の形態に係る半導体装置の断面図である。半導体装置1は、Si基板2上にゲート絶縁膜3を介して形成されたゲート電極4と、ゲート電極4の上面に形成された第1のシリサイド層11と、ゲート電極4の側面に形成されたオフセットスペーサ5と、オフセットスペーサ5の側面に形成されたゲート側壁6と、Si基板2内のゲート電極4の下方に形成されたチャネル領域13と、チャネル領域13を挟んで形成されたエピタキシャル層7と、前記チャネル領域13と前記エピタキシャル層7の間に形成されたハロー領域8と、Si基板2の表面近傍に形成されたエクステンション領域9aを含むソース・ドレイン領域9と、ソース・ドレイン領域9の上面に形成された第2のシリサイド層12と、Si基板2内に形成された素子分離領域10と、を有して概略構成される。
図2A(a)〜(d)、図2B(e)〜(h)は、本発明の第1の実施の形態に係る半導体装置の製造工程を示す断面図である。
本発明の第1の実施の形態によれば、ハロー領域8をエピタキシャル結晶成長法により形成するため、イオン注入法によりハロー領域を形成する場合と比較して、ハロー領域の形状および大きさを正確に制御し、且つ、急峻な不純物プロファイルを形成することができる。また、ハロー領域をソース・ドレイン領域9の下方に形成せず、エピタキシャル層7とチャネル領域13の間にのみ形成することで、接合リーク電流の発生や接合容量の増加を抑制することができる。
本発明の第2の実施の形態は、ハロー領域の製造方法において第1の実施の形態と異なる。なお、他の部材の構成や製造工程等、第1の実施の形態と同様の点については、簡単のために説明を省略する。
図3(a)〜(d)は、本発明の第2の実施の形態に係る半導体装置の製造工程を示す断面図である。
本発明の第2の実施の形態によれば、ハロー領域19を固相エピタキシャル結晶成長法により形成し、第1の実施の形態と同様の効果を得ることができる。
本発明は、上記各実施の形態に限定されず、発明の主旨を逸脱しない範囲内において種々変形実施が可能である。
2 Si基板
3 ゲート絶縁膜
4 ゲート電極
7 エピタキシャル層
8、19 ハロー領域
9 ソース・ドレイン領域
9a エクステンション領域
13 チャネル領域
15 凹部
15a 第1の領域
15b 第2の領域
16、18 不純物含有層
17 非晶質膜
Claims (5)
- Si基板と、
前記Si基板上にゲート絶縁膜を介して形成されたゲート電極と、
前記Si基板の前記ゲート電極の下方に形成されたチャネル領域と、
前記チャネル領域を挟んで形成されたソース・ドレイン領域と、
前記チャネル領域を挟んで形成され、導電型不純物を含まない第1のエピタキシャル成長結晶からなるエピタキシャル層と、
前記チャネル領域と前記エピタキシャル層の間に形成され、導電型不純物を含む第2のエピタキシャル成長結晶からなる、前記ソース・ドレイン領域と異なる導電型のハロー領域と、
を有することを特徴とする半導体装置。 - 前記第1のエピタキシャル成長結晶と前記第2のエピタキシャル成長結晶の少なくともいずれか一方は、Si結晶と異なる格子定数を有する結晶であることを特徴とする請求項1に記載の半導体装置。
- 前記Si結晶と異なる格子定数を有する結晶は、SiGe結晶またはSiC結晶であることを特徴とする請求項2に記載の半導体装置。
- Si基板上にゲート絶縁膜を介してゲート電極を形成する工程と、
前記ゲート電極を形成した後、前記Si基板のその露出面の直下の第1の領域、および前記Si基板の前記ゲート電極の下方の領域の一部であり、前記第1の領域に接する第2の領域に凹部を形成する工程と、
前記凹部内の前記第1の領域の少なくとも一部および前記第2の領域に導電型不純物を含む結晶をエピタキシャル成長させる工程と、
前記導電型不純物を含む結晶の前記凹部内の前記第1の領域に位置する部分を除去して、前記導電型不純物を含む結晶をハロー領域に加工する工程と、
前記導電型不純物を含む結晶を前記ハロー領域に加工した後、前記凹部内の前記第1の領域に導電型不純物を含まない結晶をエピタキシャル成長させてエピタキシャル層を形成する工程と、
前記エピタキシャル層を形成した後、前記ハロー領域に含まれる前記導電型不純物と異なる導電型の不純物を注入してソース・ドレイン領域を形成する工程と、
を含むことを特徴とする半導体装置の製造方法。 - Si基板上にゲート絶縁膜を介してゲート電極を形成する工程と、
前記ゲート電極を形成した後、前記Si基板のその露出面の直下の第1の領域、および前記Si基板の前記ゲート電極の下方の領域の一部であり、前記第1の領域に接する第2の領域に凹部を形成する工程と、
前記凹部内の前記第1の領域の少なくとも一部および前記第2の領域に導電型不純物を含む非晶質膜を堆積させる工程と、
熱処理を施すことにより、前記非晶質膜と前記Si基板の界面から前記非晶質膜の内部に向けて結晶を固相エピタキシャル成長させて、前記凹部内の前記第1の領域の少なくとも一部および前記第2の領域に固相エピタキシャル層を形成する工程と、
前記固相エピタキシャル層の前記凹部内の前記第1の領域に位置する部分を除去して、前記固相エピタキシャル層をハロー領域に加工する工程と、
前記固相エピタキシャル層を前記ハロー領域に加工した後、前記凹部内の前記第1の領域に導電型不純物を含まない結晶をエピタキシャル成長させてエピタキシャル層を形成する工程と、
前記エピタキシャル層を形成した後、前記ハロー領域に含まれる前記導電型不純物と異なる導電型の不純物を注入してソース・ドレイン領域を形成する工程と、
を含むことを特徴とする半導体装置の製造方法。
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