JP4822852B2 - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
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- JP4822852B2 JP4822852B2 JP2006008945A JP2006008945A JP4822852B2 JP 4822852 B2 JP4822852 B2 JP 4822852B2 JP 2006008945 A JP2006008945 A JP 2006008945A JP 2006008945 A JP2006008945 A JP 2006008945A JP 4822852 B2 JP4822852 B2 JP 4822852B2
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- 239000004065 semiconductor Substances 0.000 title claims description 65
- 238000004519 manufacturing process Methods 0.000 title claims description 53
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 141
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 75
- 229910052710 silicon Inorganic materials 0.000 claims description 75
- 239000010703 silicon Substances 0.000 claims description 75
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 claims description 66
- 229910021334 nickel silicide Inorganic materials 0.000 claims description 64
- 238000000034 method Methods 0.000 claims description 61
- 239000000758 substrate Substances 0.000 claims description 61
- 239000002184 metal Substances 0.000 claims description 54
- 229910052751 metal Inorganic materials 0.000 claims description 54
- 229910021332 silicide Inorganic materials 0.000 claims description 47
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 47
- 239000007789 gas Substances 0.000 claims description 45
- 229910052759 nickel Inorganic materials 0.000 claims description 44
- 230000008569 process Effects 0.000 claims description 41
- PEUPIGGLJVUNEU-UHFFFAOYSA-N nickel silicon Chemical compound [Si].[Ni] PEUPIGGLJVUNEU-UHFFFAOYSA-N 0.000 claims description 37
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 31
- 238000009792 diffusion process Methods 0.000 claims description 29
- 229910000077 silane Inorganic materials 0.000 claims description 27
- 238000010438 heat treatment Methods 0.000 claims description 25
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims description 20
- 239000013078 crystal Substances 0.000 claims description 19
- 238000001039 wet etching Methods 0.000 claims description 15
- 238000005530 etching Methods 0.000 claims description 13
- 238000002955 isolation Methods 0.000 claims description 13
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 11
- 238000009413 insulation Methods 0.000 claims description 7
- 239000001257 hydrogen Substances 0.000 claims description 6
- 229910052739 hydrogen Inorganic materials 0.000 claims description 6
- 238000012545 processing Methods 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 5
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 claims description 5
- 238000005755 formation reaction Methods 0.000 description 21
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 19
- 229920005591 polysilicon Polymers 0.000 description 19
- 230000015572 biosynthetic process Effects 0.000 description 16
- 239000012535 impurity Substances 0.000 description 16
- 229910052814 silicon oxide Inorganic materials 0.000 description 11
- 230000001133 acceleration Effects 0.000 description 9
- 238000006243 chemical reaction Methods 0.000 description 7
- 238000004544 sputter deposition Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 230000009467 reduction Effects 0.000 description 5
- 239000002019 doping agent Substances 0.000 description 4
- 238000005468 ion implantation Methods 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 3
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 3
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000005566 electron beam evaporation Methods 0.000 description 2
- 230000035515 penetration Effects 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- UXBCHMIKTYBYTN-LQPTXBPRSA-N (3s,8s,9s,10r,13r,14s,17r)-3-[12-(3-iodophenyl)dodecoxy]-10,13-dimethyl-17-[(2r)-6-methylheptan-2-yl]-2,3,4,7,8,9,11,12,14,15,16,17-dodecahydro-1h-cyclopenta[a]phenanthrene Chemical compound O([C@@H]1CC2=CC[C@H]3[C@@H]4CC[C@@H]([C@]4(CC[C@@H]3[C@@]2(C)CC1)C)[C@H](C)CCCC(C)C)CCCCCCCCCCCCC1=CC=CC(I)=C1 UXBCHMIKTYBYTN-LQPTXBPRSA-N 0.000 description 1
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 1
- -1 HfO 2 Chemical class 0.000 description 1
- 229910004129 HfSiO Inorganic materials 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 229910006501 ZrSiO Inorganic materials 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 238000000277 atomic layer chemical vapour deposition Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910000078 germane Inorganic materials 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910052914 metal silicate Inorganic materials 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000011946 reduction process Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
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Description
図1A〜1Lは、本発明の第1の実施形態による半導体装置10の製造方法の概要を示す。また図2は、前記図1A〜1Lのうち、図1H〜1Lの工程に対応したフローチャートを示す。
[第2実施形態]
次に、本発明の第2の実施形態によるCMOS素子の製造方法を、図5A〜図5Fを参照しながら説明する。
その際、形成される低抵抗シリサイド層16S,16Dのシリコン下地層中への侵入深さは、先の実施形態と同様、図6Cのシリサイド形成工程がシラン雰囲気中において実行されるため、20nm以下に抑制され、シリサイド層16S,16Dが、浅いソース拡散領域あるいはドレイン拡散領域を貫通して、素子領域を構成するウェルと短絡を生じてしまう問題は、生じない。
絶縁膜で画成されたシリコン面上に、自己整合プロセスにより選択的にニッケルモノシリサイド層を形成する工程を含む半導体装置の製造方法であって、
前記絶縁膜およびシリコン面を有するシリコン基板上に金属ニッケル膜を、前記絶縁膜およびシリコン面を覆うように形成する工程と、
前記シリコン基板を、シランガス雰囲気中、220℃を超えない温度で熱処理し、前記シリコン面表面および前記金属ニッケル膜の表面に、組成が主としてNi2Siで表される第1のニッケルシリサイド層を形成する工程と、
前記第1のニッケルシリサイド層形成工程の後、前記金属ニッケル膜をウェットエッチング処理により、除去する工程と、
前記第1のニッケルシリサイド層を熱処理により、ニッケルモノシリサイド(NiSi)を主とする第2のニッケルシリサイド層に変換する工程と、よりなることを特徴とする半導体装置の製造方法。
前記金属ニッケル膜の形成工程の後、前記第1のニッケルシリサイド層形成工程の前に、前記金属ニッケル膜を還元性雰囲気中で熱処理し、前記金属ニッケル膜表面の酸化膜を除去する工程を含むことを特徴とする付記1記載の半導体装置の製造方法
(付記3)
前記金属ニッケル膜は、10〜50nmの膜厚に形成されることを特徴とする付記1または2記載の半導体装置の製造方法。
前記還元性ガスは水素ガスであり、前記酸化膜除去工程は、140〜200℃の温度で実行されることを特徴とする付記3記載の半導体装置の製造方法。
前記シランガスは、モノシランガスまたはジシランガスであることを特徴とする付記1〜4のうち、いずれか一項記載の半導体装置の製造方法。
前記還元性雰囲気中での熱処理工程と、前記第1のシリサイド層の形成工程は、連続して、同一の処理装置中において実行されることを特徴とする付記2記載の半導体装置の製造方法。
基板上に素子分離構造を、前記素子分離構造が、シリコン面よりなる素子領域を画成するように形成する工程と、
前記素子領域上にゲート電極を、前記素子領域中において前記シリコン基板表面に形成されたゲート絶縁膜を介して形成する工程と、
前記ゲート電極のそれぞれの側壁面に第1および第2の側壁絶縁膜を形成する工程と、
前記シリコン基板中、前記第1の側壁絶縁膜および第2の側壁絶縁膜のそれぞれ外側に、同じ導電型のソースおよびドレイン領域を形成する工程と、
前記ソースおよびドレイン領域の表面に、NiSiを主とする第1および第2のニッケルモノシリサイド層をそれぞれ形成する工程と、を含む半導体装置の製造方法であって、
前記第1および第2のニッケルモノシリサイド層を形成する工程は、
前記シリコン基板上に、前記第1および第2の拡散領域を覆うように、また前記ゲート電極を前記第1および第2の側壁絶縁膜を含めて覆うように、金属ニッケル膜を堆積する工程と、
前記金属ニッケル膜を、前記第1および第2の拡散領域表面と、シランガス雰囲気中、220℃を超えない温度で熱処理し、前記ソース領域表面、前記ドレイン領域表面および前記金属ニッケル膜の表面に、Ni2Siを主とする組成の第1,第2および第3のニッケルシリサイド層を、それぞれ形成する工程と、
前記第1〜第3のニッケルシリサイド層の形成工程の後、金属ニッケル膜および前記第3のニッケルシリサイド層をウェットエッチング処理により除去する工程と、
前記ソースおよびドレイン領域において、前記第1および第2のニッケルシリサイド層を、熱処理により、前記第1および第2のニッケルモノシリサイド層に変換する工程と、よりなることを特徴とする半導体装置の製造方法。
前記金属ニッケル膜の形成工程の後、前記第1〜ダイオード3のニッケルシリサイド層形成工程の前に、前記金属ニッケル膜を還元性雰囲気中で熱処理し、前記金属ニッケル膜表面の酸化膜を除去する工程を含むことを特徴とする付記7記載の半導体装置の製造方法
(付記9)
前記金属ニッケル膜は、10〜50nmの膜厚に形成されることを特徴とする付記7または8記載の半導体装置の製造方法。
前記還元性ガスは水素ガスであり、前記酸化膜除去工程は、140〜200℃の温度で実行されることを特徴とする付記8記載の半導体装置の製造方法。
前記シランガスは、モノシランガスまたはジシランガスであることを特徴とする付記7〜9のうち、いずれか一項記載の半導体装置の製造方法。
前記還元性雰囲気中での熱処理工程と、前記第1のシリサイド層の形成工程は、連続して、同一の処理装置中において実行されることを特徴とする付記8記載の半導体装置の製造方法。
前記ソースおよびドレイン領域を形成する工程は、前記素子領域中に、前記ゲート電極および前記第1および第2の側壁絶縁膜をマスクに、イオン注入を行う工程を含むことを特徴とする付記7〜12のうち、いずれか一項記載の半導体装置の製造方法。
前記ソースおよびドレイン領域は、SiGe混晶層よりなることを特徴とする付記7〜12のうち、いずれか一項記載の半導体装置の製造方法。
前記ソースおよびドレイン領域を形成する工程は、前記素子領域中、前記第1および第2の側壁絶縁膜の外側において前記シリコン面をエッチングし、前記第1および第2の側壁面のそれぞれ外側において第1および第2の凹部を形成する工程と、前記第1および第2の凹部中にSiGe混晶層をエピタキシャルに成長させる工程とよりなることを特徴とする付記14記載の半導体装置の製造方法。
1A,11A,11B 素子領域
1I,11I 素子分離領域
1a,1b,11aN,11bN,11aP,11bP ソース/ドレインエクステンション領域
1c,1d,11SN,11DN,11SP,11DP ソース/ドレイン領域
11SNb、11DNb、11SPb、11Dpb 埋込拡散領域
12 ゲート絶縁膜
3,13N,13P ゲート電極
4A,4B,13WN,14W 側壁絶縁膜
14A,14B SiGe混晶層
5,15 金属Ni膜
6s,6d,6g,16s,16d,16g,16 Ni2Si層
6S,6D,6G,16S,16D,16G NiSi層
Claims (9)
- 絶縁膜で画成されたシリコン面上に、自己整合プロセスにより選択的にニッケルモノシリサイド層を形成する工程を含む半導体装置の製造方法であって、
前記絶縁膜およびシリコン面を有するシリコン基板上に金属ニッケル膜を、前記絶縁膜およびシリコン面を覆うように形成する工程と、
前記金属ニッケル膜を形成する工程の後、前記シリコン基板を、シランガス雰囲気中、220℃を超えない温度で熱処理し、前記シリコン面表面および前記金属ニッケル膜の表面に、組成が主としてNi2Siで表される第1のニッケルシリサイド層を形成する工程と、
前記第1のニッケルシリサイド層形成工程の後、前記第1のニッケルシリサイド層の一部をウェットエッチングにより除去する工程と、
前記第1のニッケルシリサイド層を除去する工程の後、前記金属ニッケル膜をウェットエッチング処理により、除去する工程と、
前記金属ニッケル膜を除去する工程の後、前記第1のニッケルシリサイド層を熱処理により、ニッケルモノシリサイド(NiSi)を主とする第2のニッケルシリサイド層に変換する工程と、を含むことを特徴とする半導体装置の製造方法。 - 前記金属ニッケル膜の形成工程の後、前記第1のニッケルシリサイド層形成工程の前に、前記金属ニッケル膜を還元性雰囲気中で熱処理し、前記金属ニッケル膜表面の酸化膜を除去する工程を含むことを特徴とする請求項1記載の半導体装置の製造方法。
- 前記金属ニッケル膜を前記還元性雰囲気中で熱処理する工程は、水素雰囲気中で、140〜200℃の温度で実行されることを特徴とする請求項2記載の半導体装置の製造方法。
- 前記金属ニッケル膜は、10〜50nmの膜厚に形成されることを特徴とする請求項1〜3のうち、いずれか一項記載の半導体装置の製造方法。
- 前記シランガスは、モノシランガスまたはジシランガスであることを特徴とする請求項1〜4のうち、いずれか一項記載の半導体装置の製造方法。
- 前記還元性雰囲気中での熱処理工程と、前記第1のシリサイド層の形成工程は、連続して、同一の処理装置中において実行されることを特徴とする請求項2記載の半導体装置の製造方法。
- シリコン基板上に素子分離構造を、前記素子分離構造が、シリコン面よりなる素子領域を画成するように形成する工程と、
素子分離構造を形成する工程の後、前記素子領域上にゲート電極を、前記素子領域中において前記シリコン基板表面に形成されたゲート絶縁膜を介して形成する工程と、
前記ゲート電極を形成する工程の後、前記ゲート電極のそれぞれの側壁面に第1の側壁絶縁膜および第2の側壁絶縁膜を形成する工程と、
前記第1の側壁絶縁膜および前記第2の側壁絶縁膜を形成する工程の後、前記シリコン基板中、前記第1の側壁絶縁膜および前記第2の側壁絶縁膜のそれぞれ外側に、同じ導電型のソース領域およびドレイン領域を形成する工程と、
前記ソース領域および前記ドレイン領域を形成する工程の後、前記ソース領域および前記ドレイン領域の表面に、NiSiを主とする第1のニッケルモノシリサイド層および第2のニッケルモノシリサイド層をそれぞれ形成する工程と、を含む半導体装置の製造方法であって、
前記第1のニッケルモノシリサイド層および前記第2のニッケルモノシリサイド層を形成する工程は、
前記シリコン基板上に、前記第1の拡散領域および前記第2の拡散領域を覆うように、また前記ゲート電極を前記第1の側壁絶縁膜および前記第2の側壁絶縁膜を含めて覆うように、金属ニッケル膜を堆積する工程と、
前記金属ニッケル膜を堆積する工程の後、前記金属ニッケル膜を、前記第1および第2の拡散領域表面と、シランガス雰囲気中、220℃を超えない温度で熱処理し、前記ソース領域表面、前記ドレイン領域表面および前記金属ニッケル膜の表面に、Ni2Siを主とする組成の第1のニッケルシリサイド層,第2のニッケルシリサイド層および第3のニッケルシリサイド層を、それぞれ形成する工程と、
前記第1のニッケルシリサイド層、前記第2のニッケルシリサイド層および前記第3のニッケルシリサイド層を形成する工程の後、前記第3のニッケルシリサイド層をウェットエッチング処理により除去する工程と、
前記第3のニッケルシリサイド層を除去する工程の後、前記金属ニッケル膜をウェットエッチング処理により除去する工程と、
前記金属ニッケル膜を除去する工程の後、前記ソース領域および前記ドレイン領域において、前記第1のニッケルシリサイド層および前記第2のニッケルシリサイド層を、熱処理により、前記第1のニッケルモノシリサイド層および前記第2のニッケルモノシリサイド層に変換する工程と、
を含むことを特徴とする半導体装置の製造方法。 - 前記ソース領域および前記ドレイン領域は、SiGe混晶層よりなることを特徴とする請求項7記載の半導体装置の製造方法。
- 前記ソース領域および前記ドレイン領域を形成する工程は、前記素子領域中、前記第1の側壁絶縁膜および前記第2の側壁絶縁膜の外側において前記シリコン面をエッチングし、前記第1の側壁絶縁膜および前記第2の側壁絶縁膜のそれぞれ外側において第1の凹部および第2の凹部を形成する工程と、前記第1の凹部および前記第2の凹部中にSiGe混晶層をエピタキシャルに成長させる工程と、を含むことを特徴とする請求項8記載の半導体装置の製造方法。
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