DK152060B - Fremgangsmaade til opbygning af tynde hinder af en forbindelse paa et substrat - Google Patents
Fremgangsmaade til opbygning af tynde hinder af en forbindelse paa et substrat Download PDFInfo
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- C23C16/45548—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction
- C23C16/45551—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction for relative movement of the substrate and the gas injectors or half-reaction reactor compartments
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Description
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Opfindelsen angår en fremgangsmåde til opbygning af tynde hinder af en forbindelse på et substrat ud fra denne forbindelses grundstoffer ved hjælp af efter hinanden følgende fladereaktionstrin.
Ved hidtil kendte fremgangsmåder til fremstilling af sammensatte tynde hinder fra gasformig tilstand er vakuumfordampning den vigtigste. Denne fordampning foretages enten direkte ved anvendelse af den pågældende forbindelse som kilde eller ved samtidig fordampning af forskellige kemiske grundstofkomponenter fra forskellige kilder. I det første tilfælde opdeles forbindelsen i sine komponenter. Dette er den største ulempe. Den fremstillede hindes støkiometri er da svær at kontrollere, og støkiometrien har sædvanligvis en tilbøjelighed til at variere under fordampningsprocessen. Når fordamp-
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ningen foretages ved samtidig fordampning af forskellige komponenter, forudsætter dannelsen af god støkiometri en nøje kontrol af komponenternes fordampningshastighed eller selektiv tilbagefordampning af de komponenter, som fordampes lettest. Ligesom ved fordampning fra en kemisk forbindelse kan hindens kernedannelsesegenskaber og krystalstruktur også ved samtidig fordampning af komponenter kun kontrolleres på en utilfredsstillende måde.
Når et enkrystallinsk substrat anvendes på tidligere kendt måde, kan den selektive tilbagefordampning gøres så tilpas effektiv, at den film, der opbygges, fortsætter substratets krystalstruktur. Vedrørende denne hidtil kendte fremgangsmåde, Moleculår Beam Epitaxy, henvises til J. Vac. Sci. Technol, bind 10, nr. 5, september/oktober 1973. L.L. Chang et al., "Structures Grown by Molecular Epitaxy".
Når en færdig kemisk forbindelse anvendes som kilde, kan forbindelsens sønderdeling formindskes på forud kendt måde ved hjælp af forstøvningsteknik, idet det materiale, som skal overføres, løsgøres fra kilden ved hjælp af ionbombardement. Den bedste støkiometri i forbindelse med forstøvningsteknik opnås i almindelighed ved hjælp af såkaldt bias-forstøvning, som kan sammenlignes med anvendelse af tilbagefordampning-
Et af opfindelsens formål er at undgå de ulemper, der forekommer i forbindelse med de hidtil kendte fremgangsmåder.
Fremgangsmåden ifølge opfindelsen kaldes "atomic layer epitaxy", forkortet ALE.
De vigtigste grupper af forbindelseshinder udgøres af II-VI og III-V binære forbindelser og kombinationer af disse. Dette beror i hovedsagen på disse forbindelsers halvlederegenskaber. Hindernes krystalstruktur har en primær betydning for vellykkede halvlederanvendelser. Ved de fleste anvendelser er disse krav tilstrækkeligt store til at begrænse det anvendelige materiale til enkeltkrystaller alene, som kan dannes ved aflejring af et enkrystallinsk substrat. Aflejring af kemiske forbindelser er ret vanskelig sammenlignet med aflejring af grundstoffer såsom silicium og germanium. Dette beror i hovedsagen på den mere indviklede tilvækst af forbindelser, som ved 3
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binære forbindelser og aflejring fra garformig tilstand inkluderer forekomsten af både forbindelsens gasformige og faste tilstand og af de to grundstofkomponenter. For at opnå god støkiometri må man derfor nøje kunne kontrollere grundstofkomponenternes indgangshastigheder eller partielle tryk og også substratets temperatur.
Ved mange anvendelser er det ønskeligt at have halvledermaterialet i form af en tynd hinde på et substrat, som ikke udgøres af en enkeltkrystal, men kombinerer lav pris og muligheden for vidtstrakte overflader. Sådanne anvendelser, hvor II-VI og III-V forbindelser er af størst interesse, er eksempelvis solceller, forskellige optoelek-troniske apparater, afbildningsapparater, gengivelsesapparater osv.
En mere udbredt anvendelse af sådanne apparater er imidlertid blevet vanskeliggjort af den dårlige kvalitet for det halvledermateriale, som opnås ved den hidtil kendte aflejringsteknik.
Et ufravigeligt træk ved hvert af de hidtil kendte aflejringsfremgangsmåder, som anvendes ved fremstilling af en aflejret hinde på ikke-enkrystallinske substrater, er kernedannelse ved begyndelse af hindens tilvækst. Hinden opnår ikke en kontinuerlig struktur, før de enkelte mikrokrystaller (voksende kerner) berører hinanden. Dette sker i almindelighed, når hindens gennemsnitlige tykkelse er af størrelsesordenen 100 Å. De hinder, som dannes, har en polykrystal-linsk (eller under visse forhold amorf) struktur. Hindernes elektriske egenskab påvirkes i høj grad af materialets polykrystallinske struktur. Det er ikke blot hindernes elektriske egenskaber, som lider under materialets dårlige struktur, men også den kemiske stabilitet, som er en nødvendig forudsætning for en teknisk anvendelse af hinderne. Både de elektriske og kemiske egenskaber for de sammensatte hinder påvirkes desuden stærkt af støkiometriafvigelser, der er svære at undgå ved aflejringsprocessen.
Fremgangsmåden ifølge opfindelsen til opbygning af tynde hinder af en forbindelse på et substrat er ejendommelig ved, at temperaturen for substratet og damptrykket for forbindelsens komponenter indstilles således, at overfladen bliver dækket fuldstændigt eller delvist af et atomlag i hvert reaktionstrin.
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Ifølge et yderligere træk ved opfindelsen kan der som reagerende damp anvendes en forbindelse af et af grundstofferne. Selve grundstoffet kan imidlertid også anvendes som reagerende damp.
Fremgangsmåden ifølge opfindelsen fremviser vigtige træk af epitaxi, selv 5 når der anvendes et amorft substrat, og resulterer i en kernedannelsesfri forbindelseshinde, som er meget orienteret i hindens tilvækstretning. En væsentlig forskel i forhold til andre aflejringsmetoder er, at hinden op-bygges trinvis med et atomlag af gangen som en følge af en overfladereaktion mellem en grundstofkomponent i gasformig tilstand og en an-10 den, som udgøres af overfladeatomer i den under opbygningen værende sammensatte hinde.
Processen kan gøres selvafbalancerende, hvis temperaturen for den overflade, som er ved at blive bygget op, holdes tilstrækkelig høj til at forhindre grundstofkondensering ved hvert enkelt reaktionstrin. Ved en 15 binær hinde AB, hvor A er et grundstof fra grupperne I, II, III og IV, og B er grundstof fra grupperne VII, VI og V, gentages reaktionen cyclisk, dvs. gassen A reagerer med en overflade B og danner en overflade med A-B forbindelsesbindinger. Derefter tillades overfladen at reagere med gassen B, hvorved reaktionen mellem gassen B og overfladen 20 A danner B-A bindinger. Resultatet er en overflade B, som igen udsættes for en gas A osv.
Når der anvendes et glassubstrat, er betingelsen for, at den trinvise fremskridende proces vil starte, at én af forbindelsens komponenter danner tilstrækkelig stærke bindinger med oxygenatomer, som danner 25 glassets overflade. Denne betingelse opfyldes direkte i de fleste 11-VI og lll-V forbindelser, og den kan i praksis opfyldes af alle forbindelser, som er egnede for ALE-tilvækst, ved anvendelse af et mellemliggende atomlag.
Hvis ALE-fremgangsmåden anvendes til aflejring af enkeltkrystaller, må substratets skilleretning opfylde betingelsen for komponentatomplaner i 30 rotation.
Opfindelsen vil i det følgende blive nærmere beskrevet ved hjælp af udførelsesformer, der er vist på tegningen, på hvilken
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5 fig. 1 viser et snit i et apparat til brug ved udøvelse af fremgangsmåden ifølge opfindelsen, fig. 2 viser et snit efter linjen II-II i fig. 1, fig. 3 viser et snit i et andet apparat ifølge opfindelsen, fig. 4 viset et snit efter linjen IV-IV i fig. 3, fig. 5 viser et apparat ifølge opfindelsen, hvor reaktionskamrene kan vakuumtætnes, men hvor aksial bevægelse af substratholderen alligevel tillades, fig. 6 viser en udførelsesform for apparatet ifølge opfindelsen, hvor substratet er stationært, og fig. 7 viser en modifkation af den i fig. 6 viste udførelsesform, og ifølge denne fig. 7 sker hindens tilvækst på begge sider af substratet, medens reaktionskammeret kan evakueres mellem hvert reaktionstrin gennem et specielt ventilaggregat.
Ved fremgangsmåden ifølge opfindelsen aflejres et atomlag, der eksempelvis udgøres af et grundstof A og et grundstof B, af hvilke grundstoffet A sædvanligvis hører til en af grupperne I, II, III eller IV i det periodiske system, medens grundstoffet B hører til en af grupperne VII, VI eller V. De mest sædvanlige hinder, som fremstilles ved hjcfelp af fremgangsmåden ifølge opfindelsen, udgøres af I-VII, II-VI, III-v-forbindelser eller -oxider. Ifølge opfindelsen reagerer grundstoffet A i gasformig tilstand med den under opbygning værende overflade, hvis overfladeatomer hører til gruppen B, og danner et enatomigt lag på grund af den stærke binding B-A til overfladen, medens alle yderligere A-atomer, som rammer overfladen, umiddelbart vil overgå i den gasformige tilstand, hvis A-A-bindingen ikke er tilstrækkelig stærk til at kunne forhindre grundstoffet A's tilbagefordampning. Da den hinde, som opbygges, samvirker med grundstoffet A, der er i gasformig tilstand, kan den kun vokse med ét atomlag, selv om antallet af.de atomer, der rammer overfladen, væsentlig skulle overstige det antal, som svarer til et fleratomigt
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lag. Som følge af/ at den under opbygningen værende overflade har samvirket med grundstoffet A i dets gasformige tilstand, tillades den at reagere med grundstoffet B i dettes gasformige tilstand, hvorved A-atomerne i det yderste lag igen indgår i en stærk binding B-A med de B-atomer, der rammer overfladen. Overfladen dækkes nu med et enkelt atomlag af grundstoffet B. Bindingen B-B kan ikke forhindre grundstoffet B i at gå tilbage til gasformig tilstand. Disse alternerende reaktionstrin gentages lige til den nødvendige tykkelse af AB-forbindelsen er blevet opnået.
Nogle fordelagtige udførelsesformer for fremgangsmåden ifølge opfindelsen vil nu blive detaljeret beskrevet under henvisning til tegningens fig. 1 - 7.
Fig. 1 og 2 viser et vakuumapparat bestående af et kammer 10, inde i hvilket et substrat 14, hvorpå der skal opbygges en hinde, er monteret på en rund skive 12, der er drejelig ved hjælp af en aksel 11. Neden under skiven 12 er der anbragt dampkilder 13a og 13b, som danner indbyrdes isolerede sektorer, og i hver af disse kilder er der frembragt et ønsket damptryk for grundstofkomponenterne i den hinde, som skal opbygges. Når skiven 12 bringes til at rotere, bringes substratet 14 efter tur til at samvirke med damp af grundstoffet A (13a) og B (13b), hvorved hinden vokser i overensstemmelse med fremgangsmåden ifølge opfindelsen, hvis det antages, at de gastryk og den temperatur på substratet 14, som processen kræver, er blevet virkeliggjort.
Ved den udførelsesform, der er vist i fig. 3 og 4, er skiven 12 i den første udførelsesform blevet erstattet med en ring 12b, som kan bringes til at rotere ved hjælp af akselen 11. Substratet 14 er monteret på den ydre periferi af denne ring. Dampkilderne 13a, 13b og 13c er placeret radialt omkring ringen 12b. Ringen 12a's rotationshastighed ligger fordelagtigt mellem 1-20 omdrejninger/sekund.
Et apparat af den art, der er vist i fig. 1 - 4, hvor substratet 14 er bevægeligt, og dampkilderne 13 er stationære, kan også udformes således, at substratet 14 er stationært, og dampkilderne er bevægelige. Apparatet kan eksempelvis også konstrueres således, at
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substratet 14 fastgøres på et transportbåndlignende organ, som fører substratet forbi dampkilderne. Det er klart, at den relative bevægelse mellem substratet og dampkilderne kan opnås ved hjælp af et stort antal forskellige slags indretninger.
Apparatet ifølge fig. 5 har et vakuumkammer 10 og separate reaktionskamre 19a og 19b, hvor substratet 14 bevæger sig i en cirkel og er vakuumtæt aftætnet under hver reaktion. Dette arrangement giver en bedre isolering af reaktionstrinene og medfører mindre lækage af reaktionsgasser, men det er i mekanisk henseende mere indviklet. Bedre isolering af reaktionstrinene kan også opnås med et mindre antal bevasgelige mekaniske dele ved anvendelse af en udførelses form ifølge fig. 6 og 7. Ifølge fig. 5 kan akselen 10a også bevæges i aksial retning. Det udstyr, der anvendes til at foretage disse to bevægelser, er skematisk illustreret ved hjælp af en blok 24. En blok 23 repræsenterer skematisk styringen af den pågældende bevægelse, og en blok 22 repræsenterer skematisk reguleringen af ventilerne 15a og 15b. Kilderne for de forskellige gasser er forsynet med henvisningsnumrene 20a og 20b. Henvisningsnummeret 21 betegner tætningsorganer i forbindelse med reaktionskamrene 19a og 19b.
I det i fig. 6 viste apparat er substratet monteret stationært på et underlag 12c, og substratet holdes på en passende temperatur ved hjælp af et opvarmningsorgan 17. Apparatet omfatter to dampkilder 13a og 13b, som er indrettet til efter tur at påvirke substratet 14. Dette opnås ved hjælp af ventilerne 15a og 15b i rør 16a og 16b. Disse ventiler åbnes og lukkes efter tur på en sådan måde, at medens den ene af ventilerne 15a/15b er åben, er den anden 15b/15a lukket. De indretninger, som frembringer denne funktion, er skematisk vist med en blok 18 og en elektrisk afbryder k.
Ifølge fig. 7 er kilderne 20a og 20b for forskellige gasser placeret uden for reaktionskammeret 19. Substratet 14 i kammeret 10 holdes på plads af specielle holdere 29 og 30.
Reaktionskammeret 10 fyldes med grundstofgasserne i rotation gennem ventilerne 15a og 15b, og de evakueres mellem de efter hinanden følgende trin ved hjælp af en ventil 26. Ved dette arrangement bliver reaktionskammeret 10's vægge dækket med den kemiske forbindelse
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samtidig med opbygning af hinden på substratet 14, som dækkes på begge sider. En blok 28 angiver organer til påvirkning af ventilen 26, og blokken 25 repræsenterer deres reguleringsorganer.
Den foreliggende opfindelses teoretiske baggrund beskrives herefter mere i detaljer under henvisning til de ovenfor beskrevne forskellige udførelsesformer for apparatet ifølge opfindelsen.
I kilden er grundstoffet A i ligevægt mellem sin faste tilstand og sit damptryk p. med en temperatur T (eller, hvis T overskrider smeltepunktet for A, opretholdes ligevægt mellem grundstoffets flydende og gasformige tilstand). Det samme gælder for grundstoffet B i kilden 13b. Ved en selvafbalanceret ALE-fremgangsmåde holdes substratets temperatur Tq højere end kildernes temperaturer TA og Τβ, hvilket indebærer, at dampene af A og B ikke kondenseres på substratet. I tilfælde af, at A-atomerne danner en fast forbindelse med oxygen, hvis bindingsenergi er tilstrækkelig stor til at forhindre sønderdeling, bliver substratet dækket med et fleratomigt lag af A-atomer ved hjælp af A-O-bindinger. Denne aflejring af A--atomer på overfladen kan udtrykkes ved en ligning (hvis man antager, at /UA aA0 dPA a-PA> ' dt)! s /UA ,<XA0 .
PA = 1 - e--- rA0 (1)
Ns hvor PA = det relative overfladeareal, der er dækket med A-atomer, yUA = A-atomernes kollisionstæthed med overfladen, som ifølge den kinetiske gasteori er P ~ ?n Γ A atom ; 1(Γυ 1 .Q = — — ' - i j as ' ' ^2 mkT [_ cm^ j [torr] cm^s 15 2 N = overfladeatomernes tæthed N «10 l/orn
O S
tA0 = overfladens vekselvirkningstid med O-atomer og reagerende gas A [s]
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* αΑ0 = sandsynligheden for overfladereaktion, dvs. A-atom med overfladen af 0=atomer svarende til "vedhæftningskoefficienten" ved sædvanlige aflejringsfremgangsmåder.
Sandsynligheden α for overfladereaktionen er en kompliceret funk-tion af reaktionsoverfladens temperatur og trykket for den reagerende gas. Den varierer meget afhængig af de forskellige grundstoffer og de forbindelser, som dannes. Man har fundet, at α er højere for enatomige gasser end for to- eller fleratomige gasser.
Ligningen (1) viser, at den relative dækning af overfladen med A--atomer asymptotisk nærmer sig en med forøget tid for vekselvirkning.
En betydningsfuld fordel ved ALE-tilvækst er, at den dannede forbindelses damptryk har sin mindste værdi i tilvækstretningen, og de stærkest mulige bindinger forekommer vinkelret på overfladen.
Hvis B-atomerne danner en fast forbindelse med oxygen med høj bindingsenergi, vil substratet, som samvirker med B-kilden, blive dækket med B-atomer nøjagtigt som ovenfor beskrevet ved vekselvirkning mellem A-atomerne og glasoverfladen. For grundstoffet af B-typen er dette ikke i almindelighed tilfældet, hvilket indebærer, at substratglassets overflade forbliver uforandret under sin vekselvirkning med B-dampen.
Under det følgende reaktionstrin bringes de med et enatomigt lag af A-atomer dækkede substrater til at vekselvirke med kilden for B--atomer i'gasformig tilstand. Overfladen bliver da dækket med B-ato-mer ifølge ligning (1), og et enatomigt lag af B-atomer dannes med A-B-forbindelsesbindinger. De betingelser, som gælder for damptrykket for nævnte enatomige B-lag med A-B-bindinger og for B-atomerne, som bindes med dette lag med B-B-bindinger , adskiller sig meget, hvilket resulterer i en ekstremt selektiv ti-lbagefordampning af B-atomer, som ikke har dannet forbindelsesbindinger.
Under gentagne reaktionstrin under rotationen bliver substratets overflade dækket med et lag med strukturen 0-A-B-A-B-A-B..., hvor O'et i begyndelsen vedrører substratets overfladeatomlag, medens de
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efterfølgende A-B-lag danner en stærkt orienteret hinde af den kemiske forbindelse AB. Ved perfekt dækning under hvert reaktionstrin bestemmes den totale tykkelse af hinden af antallet af rotationsomdrejninger og af forbindelsens gitterkonstant.
Hvis man anvender kilder med forskellige grundstoffer Αι*·*Αη/
Bl’*'®m' ^an man °Pky99e lagstrukturer indeholdende forbindelseskombinationer som f.eks. supergitter, heteroforbindelser osv.
De beskrevne betingelser for ALE-tilvækst kan defineres med udtrykkene i ligning (1). For at opnå garanti for fuld dækning som ovenfor beskrevet må følgende betingelser opfyldes: aAO/uA tAO » N , s ttAB/UA fcAB >> N (2)
S
og aBA/UB tBA » Ng
Da pA og pB direkte vekselvirker med den reagerende overflade, som det er tilfældet i fig. 1,. 2, 3, 4, 5 og 7, er kildernes temperaturer og Tg sammenknyttet med yU^ og yUg ved ligningerne: /UA = f(pA) = f(TA) (3) /UB “ =
For at sikre en perfekt tilbagefordampning af de grundstoffer, som ikke har dannet forbindelsesbindinger, hvilket er nødvendigt i en selvafbalanceret ALE-proces, må substratets temperatur TQ holdes tilstrækkelig meget højere end temperaturerne og Τβ. Den øverste grænse for Tq bestemmes i princippet af fordampningens damptryk.
Da man anvender glassubstrat, bestemmes imidlertid den øverste grænse Tq i praksis i almindelighed af substratglassets blødgørings-punkt. Det bør bemærkes, at den under opbygningen værende overflades skilleretning ved ALE-tilvækst meget effektivt minimerer forbindelsens damptryk. Dette er eksempelvis konstateret i forbindelse med CdSe-tilvækst, som er foretaget med TQ > 500°C uden nogen konstaterbar tilbagefordampning af forbindelsen.
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Det er klart, at ALE-tilvækst kan udføres med flere forskellige typer af apparater. Det vigtige er kildens og substratets temperatur og de trinvise vekselvirkninger under rotationen mellem substratet og den kemiske forbindelses grundstofdampe. Især giver grupperne II-VI forbindelser en stor frihed for konstruktionen af ap-paratet. Dette beror på II- og VI-grundstoffernes høje damptryk.
To apparater, som adskiller sig fra apparatet ifølge fig. 5, er vist i fig. 6 og 7.
Ved ALE-tilvækst kan vekselvirkning mellem dampen og en komponent også opnås ved anvendelse af en gasformig forbindelse af grundstoffet, som aflejres på reaktionsoverfladen i analogi med anvendelse af kemisk dampaflejring. Denne slags reaktion kan eksempelvis opnås med H2S i stedet for S2· De modsvarende overfladereaktioner med ZnS-tilvækst er H2S(g) + Zn(s)-» ZnS(s) + H2(g) med H2S, modsvarende reaktionen S2(g) + 2 Zn(s)~*2 ZnS(s) med ren S2-gas. Ifølge ALE-princippet er reaktionerne kun mulige, så længe Zn(s)-overfladeatomer findes tilgængelige. ALE-proceduren kan udføres ved aflejring af forstøvningstypen af komponentgrundstofferne. I dette tilfælde er en inert gas eller plasma til stede ved reaktionstrinene.
Ved tilpasning af ligning (1) til overflader, som ikke er helt dækket med atomer, der forårsager overfladereaktion med de pågældende gasatomer, skal ligningen kun tilpasses den aktive del af overfladen. Hvis en AB-forbindelse opbygges under anvendelse af partiel overfladedækning ved hvert eller ved et af fremgangsmådens trin, kan ligning (1) modificeres til
/UÅ aaR
—L___££ . t (4) PA = ΡΒ*"β Ns ab
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for A-atom-reaktionstrin og P = P * -e = <*>
B A e N
s for B-atom-reaktionstrin, hvor Ρβ* og vedrører den relative dækning med B- og A-.atomer på overfladen før henholdsvis A- og B-r eak tions trinet.
Den partielle dækning af et komponentgrundstof er speciel vigtig, når man opbygger hinder af en forbindelse med grundstoffer, som har et lavt damptryk, og af en forbindelse, som indeholder forskellige mængder af komponentgrundstoffer. Et vigtigt eksempel på det førstnævnte er opbygning af III-V-forbindelser på et substrat, der ikke kan opvarmes til en temperatur TQ, der er tilstrækkelig høj til at sikre en perfekt tilbagefordampning af grundstofferne fra gruppen III. I et sådant tilfælde begrænses overfladereaktionen mellem overfladeatomerne fra gruppe V og de gasformige atomer fra gruppe III til kun at forårsage en partiel dækning med atomer fra gruppe III for at sikre, at der ikke forekommer et for stort antal atomer fra gruppe III på overfladen. Gruppen V's gasreaktion med overfladen, som er partielt dækket med atomer fra gruppe III, kan gøres tilstrækkelig perfekt til at sikre en orienteret kernedannelsesfri ALE-tilvækst af forbindelsen.
Et andet vigtigt tilfælde, hvor partielle overfladereaktionstrin må anvendes, er tilvækst af dioxider af grundstoffer, som er stabile eller relativt stabile monooxider. Tilvækst af tindioxid med ALE-teknik er et illustrativt eksempel. For at danne SnC>2 i stedet for SnO begrænses vekselvirkningen nu mellem Sn-damp og O-overfla-den til kun at forårsage et par procents dækning. (^“Vekselvirkning, som udføres med C^-plasma, sikrer, at et maksimalt antal oxygenatomer bindes med Sn-atomer og således bevirker tilstrækkelig tilvækst af dioxidet. En god grund til at anvende ALE-tilvækst også i sådanne tilfælde er den iagttagelse, at et SnO^-lag på en glasplade har elektrisk ledningsevne i overfladens plan begyndende fra en Sn02-tykkelse på 10Å. Ledningsevnen har ingen tunneleffekt, hvilket beviser, at hinden har en kontinuerlig krystalstruktur. Sådanne hin
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der er fysisk ekstremt faste og kemisk modstandsdygtige, hvilket i det hele taget også gælder alle hinder af kemiske forbindelser fremstillet ved ALE-teknik, uanset om dækningen af den reagerende overflade er fuldstændig eller partiel ved de individuelle reaktionstrin.
Eksempler.
Eksempel 1.
ALE-tilvækst af ZnS foretages med apparatet ifølge fig. 1 og 2. Følgende værdier for systemparametrene anvendes:
Rotationshastighed 2 omdrejninger/sekund - substratmateriale:
Corning Glass 7059 - substrattemperatur 320°C - totalt bombardement med Zn-atomer under en vekselvirkning mellem overflade og 15 2
Zn-dampen omkring 5 x 10 atomer/cm , (hvilket måles med en kvarts krystal-hastighedsindikator), hvilket svarer til et effek- _3 tivt Zn-damptryk på omkring 10 torr og en ligevægtstemperatur på
omkring 290°C i Zn-kilden - S-kildens ligevægtstemperatur 100°C
_2 svarende til et damptryk på omkring 10 torr og et totalt bom- 16 2 bardement med på omkring 5 x 10 molekyler/cm .
Efter en 10 minutters proces var hindens tykkelse omkring 0,27 ^um, og efter 20 og 30 minutters processer var tykkelsen henholdsvis omkring 0,54 yum og 0,80 ^urn.
Hindens struktur undersøgtes med ætsningsteknik.
Eksempel 2.
ALE-tilvækst af SnC^-lag på substrat af Corning Glass 7059 udføres med et apparat ifølge fig. 1 og 2 på følgende måde:
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- substratets temperatur 300°C
- totalt antal Sn-atomer under en vekselvirkning med Sn-kilden 14 2 omkring 0,6 x 10 atomer/cm - oxygenkilden var af plasmatypen med et totaltryk på 10 - 100 mtorr og 40 mA plasmastrøm. Det totale bombardement af 09 ioner 14 2 ^ var -7 * 10 ioner/cm under en vekselvirkning med plasmakilden - med en rotationshastighed på 1 omdrejning/sekund giver denne proces en tilvækst af Sn02~hinde på 600 Å på 25 minutter, hvilket giver en gennemsnitlig tilvæksthastighed på 0,4 Å for hver omdrejning.
Eksempel 3.
ALE-tilvækst af GaP-lag på et substrat af Corning Glass 7059 udføres med et apparat ifølge fig. 1 og 2 på følgende måde:
- substratets temperatur ~300°C
- totalt antal Ga-atomer under en vekselvirkning med Ga-kilden ~10^ at omer/cm^ - totalt antal P-molekyler (antagelig P.), som rammer overfladen 4 15 under en vekselvirkning med en phosphorovn omkring 5 * 10 2 atomer/cm - i løbet af 25 minutter og med en rotationshastighed på 1 omdrej-ning/sekund aflejres en 0,25 yU tyk film, når ovennævnte parameter anvendes. Den gennemsnitlige tilvæksthastighed er 1,7 Å for hver omdrejning.
Eksempel 4.
ALE-aflejring af ZnS udføres med et apparat ifølge krav 7. Følgende systemparametre anvendes: - substrat Corning Glass 7059
- substratets temperatur ~470°C
- Zn-kildens temperatur ~390°C
- S-kildens temperatur ~120°C
- vekselvirkningstid med Zn-kilden 6 sekunder
Claims (2)
1. Fremgangsmåde til opbygning af tynde hinder af en forbindelse på et substrat ud fra denne forbindelses grundstoffer ved hjælp af efter hinanden følgende fladereaktionstrin, kendetegnet ved, at temperaturen for substratet og damptrykket for forbindelsens komponenter indstilles således, at overfladen bliver dækket fuldstændigt eller delvist af et atomlag i hvert reaktionstrin.
2. Fremgangsmåde til opbygning af tynde hinder af en forbindelse ifølge krav 1, kendetegnet ved, at der som reagerende damp anvendes en forbindelse af et af grundstofferne.
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