NL173824B - Werkwijze voor het op een oppervlak doen aangroeien van dunne films van een verbinding. - Google Patents

Werkwijze voor het op een oppervlak doen aangroeien van dunne films van een verbinding.

Info

Publication number
NL173824B
NL173824B NLAANVRAGE7513284,A NL7513284A NL173824B NL 173824 B NL173824 B NL 173824B NL 7513284 A NL7513284 A NL 7513284A NL 173824 B NL173824 B NL 173824B
Authority
NL
Netherlands
Prior art keywords
single element
atomic layer
substrate
subjecting
elements
Prior art date
Application number
NLAANVRAGE7513284,A
Other languages
English (en)
Other versions
NL173824C (nl
NL7513284A (nl
Original Assignee
Lohja Ab Oy
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lohja Ab Oy filed Critical Lohja Ab Oy
Publication of NL7513284A publication Critical patent/NL7513284A/nl
Publication of NL173824B publication Critical patent/NL173824B/nl
Application granted granted Critical
Publication of NL173824C publication Critical patent/NL173824C/nl

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/02—Pretreatment of the material to be coated
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C23C16/45548—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction
    • C23C16/45551—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction for relative movement of the substrate and the gas injectors or half-reaction reactor compartments
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02543—Phosphides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02551—Group 12/16 materials
    • H01L21/02557—Sulfides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/025—Deposition multi-step
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/072—Heterojunctions
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/169—Vacuum deposition, e.g. including molecular beam epitaxy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/935—Gas flow control
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/971—Stoichiometric control of host substrate composition
NLAANVRAGE7513284,A 1974-11-29 1975-11-13 Werkwijze voor het op een oppervlak doen aangroeien van dunne films van een verbinding. NL173824C (nl)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FI743473A FI52359C (fi) 1974-11-29 1974-11-29 Menetelmä ja laite yhdisteohutkalvojen kasvattamiseksi.

Publications (3)

Publication Number Publication Date
NL7513284A NL7513284A (nl) 1976-06-01
NL173824B true NL173824B (nl) 1983-10-17
NL173824C NL173824C (nl) 1984-03-16

Family

ID=8508475

Family Applications (1)

Application Number Title Priority Date Filing Date
NLAANVRAGE7513284,A NL173824C (nl) 1974-11-29 1975-11-13 Werkwijze voor het op een oppervlak doen aangroeien van dunne films van een verbinding.

Country Status (26)

Country Link
US (1) US4058430A (nl)
JP (1) JPS5735158B2 (nl)
AT (2) AT381122B (nl)
AU (1) AU505960B2 (nl)
BE (1) BE835906A (nl)
BR (1) BR7507724A (nl)
CA (1) CA1066174A (nl)
CH (1) CH618469A5 (nl)
CS (1) CS249502B2 (nl)
DD (1) DD122479A5 (nl)
DE (1) DE2553048C3 (nl)
DK (1) DK152060C (nl)
FI (1) FI52359C (nl)
FR (1) FR2292517A1 (nl)
GB (1) GB1495987A (nl)
HK (1) HK64880A (nl)
HU (1) HU174175B (nl)
IL (1) IL48478A (nl)
IN (1) IN143912B (nl)
IT (1) IT1049804B (nl)
NL (1) NL173824C (nl)
NO (1) NO143634C (nl)
PL (1) PL118412B1 (nl)
SE (2) SE393967B (nl)
SU (1) SU810085A3 (nl)
ZA (1) ZA757128B (nl)

Families Citing this family (870)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FI118158B (sv) 1999-10-15 2007-07-31 Asm Int Förfarande för modifiering av utgångsämneskemikalierna i en ALD-prosess
FI117944B (fi) 1999-10-15 2007-04-30 Asm Int Menetelmä siirtymämetallinitridiohutkalvojen kasvattamiseksi
FI119941B (fi) * 1999-10-15 2009-05-15 Asm Int Menetelmä nanolaminaattien valmistamiseksi
GB2000882B (en) * 1977-07-01 1982-04-07 Hitachi Ltd Vacuum vapour-deposition apparatus
US4313338A (en) * 1978-08-18 1982-02-02 Matsushita Electric Industrial Co., Ltd. Gas sensing device
US4239584A (en) * 1978-09-29 1980-12-16 International Business Machines Corporation Molecular-beam epitaxy system and method including hydrogen treatment
DE2847620C2 (de) * 1978-11-02 1984-10-18 Siemens AG, 1000 Berlin und 8000 München Vorrichtung zur Herstellung von elektrischen Bauelementen, insbesondere Schichtkondensatoren
FI57975C (fi) * 1979-02-28 1980-11-10 Lohja Ab Oy Foerfarande och anordning vid uppbyggande av tunna foereningshinnor
US4289797A (en) * 1979-10-11 1981-09-15 Western Electric Co., Incorporated Method of depositing uniform films of Six Ny or Six Oy in a plasma reactor
US4261771A (en) * 1979-10-31 1981-04-14 Bell Telephone Laboratories, Incorporated Method of fabricating periodic monolayer semiconductor structures by molecular beam epitaxy
DE3040693A1 (de) * 1979-11-08 1981-05-27 Deutsche Itt Industries Gmbh, 7800 Freiburg Verfahren zur metallisierung von halbleiterbauelementen
WO1983001466A1 (en) * 1981-10-15 1983-04-28 Davey, Keith, Simon Thin films of compounds and alloy compounds of group iii and group v elements
FI64878C (fi) * 1982-05-10 1984-01-10 Lohja Ab Oy Kombinationsfilm foer isynnerhet tunnfilmelektroluminensstrukturer
JPS5950027A (ja) * 1982-09-13 1984-03-22 Hitachi Ltd 二硫化チタン薄膜およびその形成法
US4520039A (en) * 1982-09-23 1985-05-28 Sovonics Solar Systems Compositionally varied materials and method for synthesizing the materials
US4664960A (en) * 1982-09-23 1987-05-12 Energy Conversion Devices, Inc. Compositionally varied materials and method for synthesizing the materials
US4483725A (en) * 1982-09-30 1984-11-20 At&T Bell Laboratories Reactive vapor deposition of multiconstituent material
JPS59156996A (ja) * 1983-02-23 1984-09-06 Koito Mfg Co Ltd 化合物結晶膜の製造方法とその装置
US4523051A (en) * 1983-09-27 1985-06-11 The Boeing Company Thin films of mixed metal compounds
GB8332394D0 (en) * 1983-12-05 1984-01-11 Pilkington Brothers Plc Coating apparatus
JPS60110163U (ja) * 1983-12-29 1985-07-26 スズキ株式会社 パ−キングブレ−キケ−ブルの配索構造
JPS60202927A (ja) * 1984-03-28 1985-10-14 Nippon Telegr & Teleph Corp <Ntt> ３−５族元素化合物半導体層の形成法
US4592926A (en) * 1984-05-21 1986-06-03 Machine Technology, Inc. Processing apparatus and method
GB2162862B (en) * 1984-07-26 1988-10-19 Japan Res Dev Corp A method of growing a thin film single crystalline semiconductor
JPH0766909B2 (ja) * 1984-07-26 1995-07-19 新技術事業団 元素半導体単結晶薄膜の成長法
JPH0766906B2 (ja) * 1984-07-26 1995-07-19 新技術事業団 ＧａＡｓエピタキシャル成長方法
GB2162207B (en) * 1984-07-26 1989-05-10 Japan Res Dev Corp Semiconductor crystal growth apparatus
JPH0766910B2 (ja) * 1984-07-26 1995-07-19 新技術事業団 半導体単結晶成長装置
US5294286A (en) * 1984-07-26 1994-03-15 Research Development Corporation Of Japan Process for forming a thin film of silicon
GB8421162D0 (en) * 1984-08-21 1984-09-26 British Telecomm Growth of semi-conductors
US4622083A (en) * 1985-03-11 1986-11-11 Texas Instruments Incorporated Molecular beam epitaxial process
JPS61210679A (ja) * 1985-03-15 1986-09-18 Sony Corp 半導体装置
US5250148A (en) * 1985-05-15 1993-10-05 Research Development Corporation Process for growing GaAs monocrystal film
US6077718A (en) * 1985-07-23 2000-06-20 Canon Kabushiki Kaisha Method for forming deposited film
US5769950A (en) * 1985-07-23 1998-06-23 Canon Kabushiki Kaisha Device for forming deposited film
US5261961A (en) * 1985-07-23 1993-11-16 Canon Kabushiki Kaisha Device for forming deposited film
JPH0817159B2 (ja) * 1985-08-15 1996-02-21 キヤノン株式会社 堆積膜の形成方法
AU590327B2 (en) * 1985-09-09 1989-11-02 Sumitomo Electric Industries, Ltd. Method of growth of thin film layer for use in a composite semiconductor
US4837048A (en) * 1985-10-24 1989-06-06 Canon Kabushiki Kaisha Method for forming a deposited film
US4834022A (en) * 1985-11-08 1989-05-30 Focus Semiconductor Systems, Inc. CVD reactor and gas injection system
EP0250603B1 (en) * 1985-12-09 1994-07-06 Nippon Telegraph and Telephone Corporation Process for forming thin film of compound semiconductor
JPH0645885B2 (ja) * 1985-12-16 1994-06-15 キヤノン株式会社 堆積膜形成法
JPH0645888B2 (ja) * 1985-12-17 1994-06-15 キヤノン株式会社 堆積膜形成法
JPS62142778A (ja) * 1985-12-18 1987-06-26 Canon Inc 堆積膜形成法
JPH0645890B2 (ja) * 1985-12-18 1994-06-15 キヤノン株式会社 堆積膜形成法
US5160543A (en) * 1985-12-20 1992-11-03 Canon Kabushiki Kaisha Device for forming a deposited film
JPH0746729B2 (ja) * 1985-12-26 1995-05-17 キヤノン株式会社 薄膜トランジスタの製造方法
JPS62226892A (ja) * 1986-03-29 1987-10-05 Univ Tohoku 単結晶サフアイア薄膜の製造法
AU7077087A (en) * 1986-03-31 1987-10-08 Canon Kabushiki Kaisha Forming a deposited film
US4828938A (en) * 1986-04-11 1989-05-09 Hughes Aircraft Company Method for depositing materials containing tellurium and product
US4767494A (en) * 1986-07-04 1988-08-30 Nippon Telegraph & Telephone Corporation Preparation process of compound semiconductor
JPH0834180B2 (ja) * 1986-08-26 1996-03-29 セイコー電子工業株式会社 化合物半導体薄膜の成長方法
JP2587623B2 (ja) * 1986-11-22 1997-03-05 新技術事業団 化合物半導体のエピタキシヤル結晶成長方法
US4834023A (en) * 1986-12-19 1989-05-30 Canon Kabushiki Kaisha Apparatus for forming deposited film
JPH0812844B2 (ja) * 1987-03-27 1996-02-07 日本電気株式会社 ▲ｉｉｉ▼−ｖ族化合物半導体およびその形成方法
US5068204A (en) * 1987-03-27 1991-11-26 Misawa Co. Ltd. Method of manufacturing a light emitting element
JPH0666274B2 (ja) * 1987-07-01 1994-08-24 日本電気株式会社 ▲ｉｉｉ▼−ｖ族化合物半導体の形成方法
GB8718916D0 (en) * 1987-08-10 1987-09-16 Ion Tech Ltd Thin film alloying apparatus
US5296087A (en) * 1987-08-24 1994-03-22 Canon Kabushiki Kaisha Crystal formation method
FI81926C (fi) * 1987-09-29 1990-12-10 Nokia Oy Ab Foerfarande foer uppbyggning av gaas-filmer pao si- och gaas-substrater.
DE3743938C2 (de) * 1987-12-23 1995-08-31 Cs Halbleiter Solartech Verfahren zum Atomschicht-Epitaxie-Aufwachsen einer III/V-Verbindungshalbleiter-Dünnschicht
US5166092A (en) * 1988-01-28 1992-11-24 Fujitsu Limited Method of growing compound semiconductor epitaxial layer by atomic layer epitaxy
US5130269A (en) * 1988-04-27 1992-07-14 Fujitsu Limited Hetero-epitaxially grown compound semiconductor substrate and a method of growing the same
US5261959A (en) * 1988-05-26 1993-11-16 General Electric Company Diamond crystal growth apparatus
US5108779A (en) * 1988-05-26 1992-04-28 General Electric Company Diamond crystal growth process
ATE112418T1 (de) * 1988-06-03 1994-10-15 Ibm Verfahren zur herstellung künstlicher hochtemperatur-supraleiter mit mehrschichtiger struktur.
US4951603A (en) * 1988-09-12 1990-08-28 Daidousanso Co., Ltd. Apparatus for producing semiconductors
US4931132A (en) * 1988-10-07 1990-06-05 Bell Communications Research, Inc. Optical control of deposition of crystal monolayers
JPH0647515B2 (ja) * 1988-12-08 1994-06-22 シャープ株式会社 化合物半導体エピタキシャル成長法
DE3843157C1 (nl) * 1988-12-22 1990-05-10 Du Pont De Nemours (Deutschland) Gmbh, 6380 Bad Homburg, De
US5013683A (en) * 1989-01-23 1991-05-07 The Regents Of The University Of California Method for growing tilted superlattices
JPH0824191B2 (ja) * 1989-03-17 1996-03-06 富士通株式会社 薄膜トランジスタ
US4993358A (en) * 1989-07-28 1991-02-19 Watkins-Johnson Company Chemical vapor deposition reactor and method of operation
US5164040A (en) * 1989-08-21 1992-11-17 Martin Marietta Energy Systems, Inc. Method and apparatus for rapidly growing films on substrates using pulsed supersonic jets
US5338389A (en) * 1990-01-19 1994-08-16 Research Development Corporation Of Japan Method of epitaxially growing compound crystal and doping method therein
US5094974A (en) * 1990-02-28 1992-03-10 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Growth of III-V films by control of MBE growth front stoichiometry
US5091335A (en) * 1990-03-30 1992-02-25 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration MBE growth technology for high quality strained III-V layers
US5071670A (en) * 1990-06-11 1991-12-10 Kelly Michael A Method for chemical vapor deposition under a single reactor vessel divided into separate reaction chambers each with its own depositing and exhausting means
US5225366A (en) * 1990-06-22 1993-07-06 The United States Of America As Represented By The Secretary Of The Navy Apparatus for and a method of growing thin films of elemental semiconductors
US5483919A (en) * 1990-08-31 1996-01-16 Nippon Telegraph And Telephone Corporation Atomic layer epitaxy method and apparatus
WO1992012278A1 (en) * 1991-01-11 1992-07-23 University Of Georgia Research Foundation, Inc. Method to electrochemically deposit compound semiconductors
US5385651A (en) * 1991-01-11 1995-01-31 University Of Georgia Research Foundation Digital electrochemical etching of compound semiconductors
US5291066A (en) * 1991-11-14 1994-03-01 General Electric Company Moisture-proof electrical circuit high density interconnect module and method for making same
US5311055A (en) * 1991-11-22 1994-05-10 The United States Of America As Represented By The Secretary Of The Navy Trenched bipolar transistor structures
US5455459A (en) * 1992-03-27 1995-10-03 Martin Marietta Corporation Reconstructable interconnect structure for electronic circuits
US5458084A (en) * 1992-04-16 1995-10-17 Moxtek, Inc. X-ray wave diffraction optics constructed by atomic layer epitaxy
US5330610A (en) * 1993-05-28 1994-07-19 Martin Marietta Energy Systems, Inc. Method of digital epilaxy by externally controlled closed-loop feedback
GB2280309B (en) * 1993-06-22 1997-05-07 Mitsubishi Chem Ind Method of manufacturing a group II-VI compound semiconductor
FI92897C (fi) * 1993-07-20 1995-01-10 Planar International Oy Ltd Menetelmä kerrosrakenteen valmistamiseksi elektroluminenssikomponentteja varten
US6130147A (en) * 1994-04-07 2000-10-10 Sdl, Inc. Methods for forming group III-V arsenide-nitride semiconductor materials
JP3181171B2 (ja) * 1994-05-20 2001-07-03 シャープ株式会社 気相成長装置および気相成長方法
US5641984A (en) * 1994-08-19 1997-06-24 General Electric Company Hermetically sealed radiation imager
JP2654608B2 (ja) * 1994-09-09 1997-09-17 科学技術振興事業団 ＧａＡｓ半導体ダイオードの製造方法
FI100409B (fi) * 1994-11-28 1997-11-28 Asm Int Menetelmä ja laitteisto ohutkalvojen valmistamiseksi
FI97730C (fi) * 1994-11-28 1997-02-10 Mikrokemia Oy Laitteisto ohutkalvojen valmistamiseksi
FI97731C (fi) * 1994-11-28 1997-02-10 Mikrokemia Oy Menetelmä ja laite ohutkalvojen valmistamiseksi
FI954922A (fi) * 1995-10-16 1997-04-17 Picopak Oy Valmistusmenetelmä sekä kontaktinystyrakenne puolijohdepalojen tiheitä pintaliitoksia varten
US5698262A (en) * 1996-05-06 1997-12-16 Libbey-Owens-Ford Co. Method for forming tin oxide coating on glass
US6342277B1 (en) * 1996-08-16 2002-01-29 Licensee For Microelectronics: Asm America, Inc. Sequential chemical vapor deposition
WO1998000587A1 (fr) * 1996-07-02 1998-01-08 Jury Viktorovich Klevkov Procede de production de composes cristallins d'une grande purete et dispositif de mise en oeuvre de ce procede
US5747113A (en) * 1996-07-29 1998-05-05 Tsai; Charles Su-Chang Method of chemical vapor deposition for producing layer variation by planetary susceptor rotation
US5916365A (en) * 1996-08-16 1999-06-29 Sherman; Arthur Sequential chemical vapor deposition
FI100758B (fi) * 1996-09-11 1998-02-13 Planar Internat Oy Ltd Menetelmä ZnS:Mn-loisteainekerroksen kasvattamiseksi ohutkalvoelektrol uminenssikomponentteja varten
JPH10308283A (ja) 1997-03-04 1998-11-17 Denso Corp Ｅｌ素子およびその製造方法
US5851849A (en) * 1997-05-22 1998-12-22 Lucent Technologies Inc. Process for passivating semiconductor laser structures with severe steps in surface topography
FI972874A0 (fi) * 1997-07-04 1997-07-04 Mikrokemia Oy Foerfarande och anordning foer framstaellning av tunnfilmer
US7393561B2 (en) * 1997-08-11 2008-07-01 Applied Materials, Inc. Method and apparatus for layer by layer deposition of thin films
KR100274603B1 (ko) * 1997-10-01 2001-01-15 윤종용 반도체장치의제조방법및그의제조장치
US5972430A (en) * 1997-11-26 1999-10-26 Advanced Technology Materials, Inc. Digital chemical vapor deposition (CVD) method for forming a multi-component oxide layer
FI104383B (fi) 1997-12-09 2000-01-14 Fortum Oil & Gas Oy Menetelmä laitteistojen sisäpintojen päällystämiseksi
FI108355B (fi) 1998-07-28 2002-01-15 Planar Systems Oy Nõyt÷n ohutkalvorakenteen eristekalvo sekõ ohutkalvo-elektroluminesessi-nõytt÷laite
FI108375B (fi) 1998-09-11 2002-01-15 Asm Microchemistry Oy Menetelmõ eristõvien oksidiohutkalvojen valmistamiseksi
US20060219157A1 (en) * 2001-06-28 2006-10-05 Antti Rahtu Oxide films containing titanium
US6358632B1 (en) 1998-11-10 2002-03-19 Planar Systems, Inc. TFEL devices having insulating layers
AU3229600A (en) * 1999-02-12 2000-08-29 Gelest, Inc. Chemical vapor deposition of tungsten nitride
FI118342B (fi) 1999-05-10 2007-10-15 Asm Int Laite ohutkalvojen valmistamiseksi
US6503561B1 (en) 1999-07-08 2003-01-07 Air Products And Chemicals, Inc. Liquid precursor mixtures for deposition of multicomponent metal containing materials
US6238734B1 (en) 1999-07-08 2001-05-29 Air Products And Chemicals, Inc. Liquid precursor mixtures for deposition of multicomponent metal containing materials
FI110311B (fi) 1999-07-20 2002-12-31 Asm Microchemistry Oy Menetelmä ja laitteisto aineiden poistamiseksi kaasuista
US7554829B2 (en) 1999-07-30 2009-06-30 Micron Technology, Inc. Transmission lines for CMOS integrated circuits
CN100371491C (zh) 1999-08-17 2008-02-27 东京电子株式会社 脉冲等离子体处理方法及其设备
US6391785B1 (en) * 1999-08-24 2002-05-21 Interuniversitair Microelektronica Centrum (Imec) Method for bottomless deposition of barrier layers in integrated circuit metallization schemes
US6511539B1 (en) * 1999-09-08 2003-01-28 Asm America, Inc. Apparatus and method for growth of a thin film
TW515032B (en) * 1999-10-06 2002-12-21 Samsung Electronics Co Ltd Method of forming thin film using atomic layer deposition method
US6576053B1 (en) 1999-10-06 2003-06-10 Samsung Electronics Co., Ltd. Method of forming thin film using atomic layer deposition method
FI117942B (fi) 1999-10-14 2007-04-30 Asm Int Menetelmä oksidiohutkalvojen kasvattamiseksi
US6727169B1 (en) * 1999-10-15 2004-04-27 Asm International, N.V. Method of making conformal lining layers for damascene metallization
WO2001029893A1 (en) 1999-10-15 2001-04-26 Asm America, Inc. Method for depositing nanolaminate thin films on sensitive surfaces
US6475276B1 (en) 1999-10-15 2002-11-05 Asm Microchemistry Oy Production of elemental thin films using a boron-containing reducing agent
KR100363084B1 (ko) * 1999-10-19 2002-11-30 삼성전자 주식회사 박막 구조를 위한 다중막을 포함하는 커패시터 및 그 제조 방법
US6203613B1 (en) 1999-10-19 2001-03-20 International Business Machines Corporation Atomic layer deposition with nitrate containing precursors
US6780704B1 (en) 1999-12-03 2004-08-24 Asm International Nv Conformal thin films over textured capacitor electrodes
US6503330B1 (en) 1999-12-22 2003-01-07 Genus, Inc. Apparatus and method to achieve continuous interface and ultrathin film during atomic layer deposition
SE517886C2 (sv) * 1999-12-27 2002-07-30 Gunnarssons C Verkstads Ab Anordning och förfarade för placering av strön på en brädstapel
FI118474B (fi) 1999-12-28 2007-11-30 Asm Int Laite ohutkalvojen valmistamiseksi
FI118343B (fi) 1999-12-28 2007-10-15 Asm Int Laite ohutkalvojen valmistamiseksi
US6576062B2 (en) * 2000-01-06 2003-06-10 Tokyo Electron Limited Film forming apparatus and film forming method
US6551399B1 (en) 2000-01-10 2003-04-22 Genus Inc. Fully integrated process for MIM capacitors using atomic layer deposition
US6492283B2 (en) 2000-02-22 2002-12-10 Asm Microchemistry Oy Method of forming ultrathin oxide layer
US7419903B2 (en) * 2000-03-07 2008-09-02 Asm International N.V. Thin films
AU2001245388A1 (en) 2000-03-07 2001-09-17 Asm America, Inc. Graded thin films
US6500499B1 (en) 2000-03-10 2002-12-31 Air Products And Chemicals, Inc. Deposition and annealing of multicomponent ZrSnTi and HfSnTi oxide thin films using solventless liquid mixture of precursors
JP4556282B2 (ja) * 2000-03-31 2010-10-06 株式会社デンソー 有機ｅｌ素子およびその製造方法
FI117978B (fi) * 2000-04-14 2007-05-15 Asm Int Menetelmä ja laitteisto ohutkalvon kasvattamiseksi alustalle
TW576873B (en) * 2000-04-14 2004-02-21 Asm Int Method of growing a thin film onto a substrate
FI117979B (fi) 2000-04-14 2007-05-15 Asm Int Menetelmä oksidiohutkalvojen valmistamiseksi
US7060132B2 (en) * 2000-04-14 2006-06-13 Asm International N.V. Method and apparatus of growing a thin film
US20020195056A1 (en) * 2000-05-12 2002-12-26 Gurtej Sandhu Versatile atomic layer deposition apparatus
FI118805B (fi) * 2000-05-15 2008-03-31 Asm Int Menetelmä ja kokoonpano kaasufaasireaktantin syöttämiseksi reaktiokammioon
US6759325B2 (en) 2000-05-15 2004-07-06 Asm Microchemistry Oy Sealing porous structures
US7494927B2 (en) 2000-05-15 2009-02-24 Asm International N.V. Method of growing electrical conductors
US6482733B2 (en) 2000-05-15 2002-11-19 Asm Microchemistry Oy Protective layers prior to alternating layer deposition
US6679951B2 (en) 2000-05-15 2004-01-20 Asm Intenational N.V. Metal anneal with oxidation prevention
US6878628B2 (en) 2000-05-15 2005-04-12 Asm International Nv In situ reduction of copper oxide prior to silicon carbide deposition
WO2001088972A1 (en) 2000-05-15 2001-11-22 Asm Microchemistry Oy Process for producing integrated circuits
US7141278B2 (en) * 2000-06-08 2006-11-28 Asm Genitech Korea Ltd. Thin film forming method
US20040224504A1 (en) 2000-06-23 2004-11-11 Gadgil Prasad N. Apparatus and method for plasma enhanced monolayer processing
US6620723B1 (en) 2000-06-27 2003-09-16 Applied Materials, Inc. Formation of boride barrier layers using chemisorption techniques
US7101795B1 (en) 2000-06-28 2006-09-05 Applied Materials, Inc. Method and apparatus for depositing refractory metal layers employing sequential deposition techniques to form a nucleation layer
US7732327B2 (en) 2000-06-28 2010-06-08 Applied Materials, Inc. Vapor deposition of tungsten materials
US7405158B2 (en) 2000-06-28 2008-07-29 Applied Materials, Inc. Methods for depositing tungsten layers employing atomic layer deposition techniques
US6551929B1 (en) 2000-06-28 2003-04-22 Applied Materials, Inc. Bifurcated deposition process for depositing refractory metal layers employing atomic layer deposition and chemical vapor deposition techniques
US7964505B2 (en) 2005-01-19 2011-06-21 Applied Materials, Inc. Atomic layer deposition of tungsten materials
US6585823B1 (en) * 2000-07-07 2003-07-01 Asm International, N.V. Atomic layer deposition
US6592942B1 (en) * 2000-07-07 2003-07-15 Asm International N.V. Method for vapour deposition of a film onto a substrate
US6458416B1 (en) * 2000-07-19 2002-10-01 Micron Technology, Inc. Deposition methods
CN1218331C (zh) * 2000-08-02 2005-09-07 株式会社新王磁材 薄膜稀土族永久磁铁及其制造方法
KR100458982B1 (ko) * 2000-08-09 2004-12-03 주성엔지니어링(주) 회전형 가스분사기를 가지는 반도체소자 제조장치 및 이를이용한 박막증착방법
US7192888B1 (en) * 2000-08-21 2007-03-20 Micron Technology, Inc. Low selectivity deposition methods
US6461909B1 (en) 2000-08-30 2002-10-08 Micron Technology, Inc. Process for fabricating RuSixOy-containing adhesion layers
US6903005B1 (en) 2000-08-30 2005-06-07 Micron Technology, Inc. Method for the formation of RuSixOy-containing barrier layers for high-k dielectrics
US7094690B1 (en) * 2000-08-31 2006-08-22 Micron Technology, Inc. Deposition methods and apparatuses providing surface activation
WO2002027063A2 (en) 2000-09-28 2002-04-04 President And Fellows Of Harward College Vapor deposition of oxides, silicates and phosphates
US6617173B1 (en) 2000-10-11 2003-09-09 Genus, Inc. Integration of ferromagnetic films with ultrathin insulating film using atomic layer deposition
US20030190424A1 (en) * 2000-10-20 2003-10-09 Ofer Sneh Process for tungsten silicide atomic layer deposition
KR100382149B1 (ko) 2000-11-30 2003-05-09 한국전자통신연구원 스트론튬 탄탈륨 산화물 박막 형성 방법
WO2002045167A2 (en) 2000-11-30 2002-06-06 Asm International N.V. Thin films for magnetic devices
AU2002232844A1 (en) * 2000-12-06 2002-06-18 Angstron Systems, Inc. System and method for modulated ion-induced atomic layer deposition (mii-ald)
US9255329B2 (en) * 2000-12-06 2016-02-09 Novellus Systems, Inc. Modulated ion-induced atomic layer deposition (MII-ALD)
US6630201B2 (en) 2001-04-05 2003-10-07 Angstron Systems, Inc. Adsorption process for atomic layer deposition
US6800173B2 (en) * 2000-12-15 2004-10-05 Novellus Systems, Inc. Variable gas conductance control for a process chamber
US6825447B2 (en) 2000-12-29 2004-11-30 Applied Materials, Inc. Apparatus and method for uniform substrate heating and contaminate collection
US6998579B2 (en) 2000-12-29 2006-02-14 Applied Materials, Inc. Chamber for uniform substrate heating
US6765178B2 (en) 2000-12-29 2004-07-20 Applied Materials, Inc. Chamber for uniform substrate heating
US6811814B2 (en) 2001-01-16 2004-11-02 Applied Materials, Inc. Method for growing thin films by catalytic enhancement
US20020127336A1 (en) * 2001-01-16 2002-09-12 Applied Materials, Inc. Method for growing thin films by catalytic enhancement
TW556004B (en) * 2001-01-31 2003-10-01 Planar Systems Inc Methods and apparatus for the production of optical filters
KR100408733B1 (ko) 2001-02-02 2003-12-11 주성엔지니어링(주) 박막 증착 방법
US6951804B2 (en) 2001-02-02 2005-10-04 Applied Materials, Inc. Formation of a tantalum-nitride layer
WO2002080244A2 (en) 2001-02-12 2002-10-10 Asm America, Inc. Improved process for deposition of semiconductor films
US6613656B2 (en) * 2001-02-13 2003-09-02 Micron Technology, Inc. Sequential pulse deposition
US6852167B2 (en) 2001-03-01 2005-02-08 Micron Technology, Inc. Methods, systems, and apparatus for uniform chemical-vapor depositions
US6878206B2 (en) 2001-07-16 2005-04-12 Applied Materials, Inc. Lid assembly for a processing system to facilitate sequential deposition techniques
US6660126B2 (en) 2001-03-02 2003-12-09 Applied Materials, Inc. Lid assembly for a processing system to facilitate sequential deposition techniques
US9139906B2 (en) 2001-03-06 2015-09-22 Asm America, Inc. Doping with ALD technology
US7563715B2 (en) 2005-12-05 2009-07-21 Asm International N.V. Method of producing thin films
US7491634B2 (en) * 2006-04-28 2009-02-17 Asm International N.V. Methods for forming roughened surfaces and applications thereof
US6734020B2 (en) 2001-03-07 2004-05-11 Applied Materials, Inc. Valve control system for atomic layer deposition chamber
US6939579B2 (en) * 2001-03-07 2005-09-06 Asm International N.V. ALD reactor and method with controlled wall temperature
US6764940B1 (en) 2001-03-13 2004-07-20 Novellus Systems, Inc. Method for depositing a diffusion barrier for copper interconnect applications
US7186648B1 (en) 2001-03-13 2007-03-06 Novellus Systems, Inc. Barrier first method for single damascene trench applications
US8043484B1 (en) 2001-03-13 2011-10-25 Novellus Systems, Inc. Methods and apparatus for resputtering process that improves barrier coverage
US7781327B1 (en) 2001-03-13 2010-08-24 Novellus Systems, Inc. Resputtering process for eliminating dielectric damage
FI109770B (fi) 2001-03-16 2002-10-15 Asm Microchemistry Oy Menetelmä metallinitridiohutkalvojen valmistamiseksi
DE10296448T5 (de) * 2001-03-20 2004-04-15 Mattson Technology Inc., Fremont Verfahren zum Abscheiden einer Schicht mit einer verhältnismässig hohen Dielektrizitätskonstante auf ein Substrat
US6908639B2 (en) 2001-04-02 2005-06-21 Micron Technology, Inc. Mixed composition interface layer and method of forming
US20020144786A1 (en) * 2001-04-05 2002-10-10 Angstron Systems, Inc. Substrate temperature control in an ALD reactor
US6627268B1 (en) 2001-05-03 2003-09-30 Novellus Systems, Inc. Sequential ion, UV, and electron induced chemical vapor deposition
US6759081B2 (en) 2001-05-11 2004-07-06 Asm International, N.V. Method of depositing thin films for magnetic heads
SE523263C2 (sv) * 2001-05-23 2004-04-06 Gunnarssons C Verkstads Ab Anordning och förfarande för läggning av strön på en brädstapel
US6828218B2 (en) 2001-05-31 2004-12-07 Samsung Electronics Co., Ltd. Method of forming a thin film using atomic layer deposition
US7056278B2 (en) * 2001-06-01 2006-06-06 Adamed Sp. Z.O.O. Method of treating overactive bladder in women
US6849545B2 (en) 2001-06-20 2005-02-01 Applied Materials, Inc. System and method to form a composite film stack utilizing sequential deposition techniques
US6861334B2 (en) * 2001-06-21 2005-03-01 Asm International, N.V. Method of fabricating trench isolation structures for integrated circuits using atomic layer deposition
US7211144B2 (en) 2001-07-13 2007-05-01 Applied Materials, Inc. Pulsed nucleation deposition of tungsten layers
US20030029715A1 (en) 2001-07-25 2003-02-13 Applied Materials, Inc. An Apparatus For Annealing Substrates In Physical Vapor Deposition Systems
US9051641B2 (en) 2001-07-25 2015-06-09 Applied Materials, Inc. Cobalt deposition on barrier surfaces
US20090004850A1 (en) 2001-07-25 2009-01-01 Seshadri Ganguli Process for forming cobalt and cobalt silicide materials in tungsten contact applications
US8110489B2 (en) 2001-07-25 2012-02-07 Applied Materials, Inc. Process for forming cobalt-containing materials
JP2005504885A (ja) 2001-07-25 2005-02-17 アプライド　マテリアルズ　インコーポレイテッド 新規なスパッタ堆積方法を使用したバリア形成
US6835414B2 (en) 2001-07-27 2004-12-28 Unaxis Balzers Aktiengesellschaft Method for producing coated substrates
US7085616B2 (en) 2001-07-27 2006-08-01 Applied Materials, Inc. Atomic layer deposition apparatus
JP4921652B2 (ja) * 2001-08-03 2012-04-25 エイエスエム インターナショナル エヌ．ヴェー． イットリウム酸化物およびランタン酸化物薄膜を堆積する方法
WO2003023835A1 (en) * 2001-08-06 2003-03-20 Genitech Co., Ltd. Plasma enhanced atomic layer deposition (peald) equipment and method of forming a conducting thin film using the same thereof
US7368014B2 (en) * 2001-08-09 2008-05-06 Micron Technology, Inc. Variable temperature deposition methods
US8026161B2 (en) 2001-08-30 2011-09-27 Micron Technology, Inc. Highly reliable amorphous high-K gate oxide ZrO2
US6806145B2 (en) 2001-08-31 2004-10-19 Asm International, N.V. Low temperature method of forming a gate stack with a high k layer deposited over an interfacial oxide layer
KR100434698B1 (ko) * 2001-09-05 2004-06-07 주식회사 하이닉스반도체 반도체소자의 선택적 에피성장법
US9708707B2 (en) 2001-09-10 2017-07-18 Asm International N.V. Nanolayer deposition using bias power treatment
US6718126B2 (en) 2001-09-14 2004-04-06 Applied Materials, Inc. Apparatus and method for vaporizing solid precursor for CVD or atomic layer deposition
WO2003025243A2 (en) * 2001-09-14 2003-03-27 Asm International N.V. Metal nitride deposition by ald using gettering reactant
US6936906B2 (en) 2001-09-26 2005-08-30 Applied Materials, Inc. Integration of barrier layer and seed layer
US7049226B2 (en) 2001-09-26 2006-05-23 Applied Materials, Inc. Integration of ALD tantalum nitride for copper metallization
US6960537B2 (en) 2001-10-02 2005-11-01 Asm America, Inc. Incorporation of nitrogen into high k dielectric film
US6589887B1 (en) * 2001-10-11 2003-07-08 Novellus Systems, Inc. Forming metal-derived layers by simultaneous deposition and evaporation of metal
US7025894B2 (en) * 2001-10-16 2006-04-11 Hewlett-Packard Development Company, L.P. Fluid-ejection devices and a deposition method for layers thereof
US7780785B2 (en) 2001-10-26 2010-08-24 Applied Materials, Inc. Gas delivery apparatus for atomic layer deposition
US6916398B2 (en) 2001-10-26 2005-07-12 Applied Materials, Inc. Gas delivery apparatus and method for atomic layer deposition
US7204886B2 (en) 2002-11-14 2007-04-17 Applied Materials, Inc. Apparatus and method for hybrid chemical processing
KR100782529B1 (ko) * 2001-11-08 2007-12-06 에이에스엠지니텍코리아 주식회사 증착 장치
KR100760291B1 (ko) * 2001-11-08 2007-09-19 에이에스엠지니텍코리아 주식회사 박막 형성 방법
US6773507B2 (en) 2001-12-06 2004-08-10 Applied Materials, Inc. Apparatus and method for fast-cycle atomic layer deposition
US6729824B2 (en) 2001-12-14 2004-05-04 Applied Materials, Inc. Dual robot processing system
US6902620B1 (en) * 2001-12-19 2005-06-07 Novellus Systems, Inc. Atomic layer deposition systems and methods
US6900122B2 (en) 2001-12-20 2005-05-31 Micron Technology, Inc. Low-temperature grown high-quality ultra-thin praseodymium gate dielectrics
KR20030058595A (ko) * 2001-12-31 2003-07-07 주식회사 하이닉스반도체 박막 형성 방법
KR100979575B1 (ko) * 2002-01-17 2010-09-01 썬듀 테크놀로지스 엘엘씨 원자층 침착 장치 및 이의 제조방법
US6767795B2 (en) 2002-01-17 2004-07-27 Micron Technology, Inc. Highly reliable amorphous high-k gate dielectric ZrOXNY
AU2003238853A1 (en) 2002-01-25 2003-09-02 Applied Materials, Inc. Apparatus for cyclical deposition of thin films
US6998014B2 (en) 2002-01-26 2006-02-14 Applied Materials, Inc. Apparatus and method for plasma assisted deposition
US6866746B2 (en) * 2002-01-26 2005-03-15 Applied Materials, Inc. Clamshell and small volume chamber with fixed substrate support
US6911391B2 (en) 2002-01-26 2005-06-28 Applied Materials, Inc. Integration of titanium and titanium nitride layers
US6827978B2 (en) 2002-02-11 2004-12-07 Applied Materials, Inc. Deposition of tungsten films
US6833161B2 (en) 2002-02-26 2004-12-21 Applied Materials, Inc. Cyclical deposition of tungsten nitride for metal oxide gate electrode
US6972267B2 (en) 2002-03-04 2005-12-06 Applied Materials, Inc. Sequential deposition of tantalum nitride using a tantalum-containing precursor and a nitrogen-containing precursor
EP1485513A2 (en) * 2002-03-08 2004-12-15 Sundew Technologies, LLC Ald method and apparatus
US6893506B2 (en) * 2002-03-11 2005-05-17 Micron Technology, Inc. Atomic layer deposition apparatus and method
US7220312B2 (en) * 2002-03-13 2007-05-22 Micron Technology, Inc. Methods for treating semiconductor substrates
KR100468847B1 (ko) * 2002-04-02 2005-01-29 삼성전자주식회사 알콜을 이용한 금속산화물 박막의 화학기상증착법
US7439191B2 (en) 2002-04-05 2008-10-21 Applied Materials, Inc. Deposition of silicon layers for active matrix liquid crystal display (AMLCD) applications
US6846516B2 (en) 2002-04-08 2005-01-25 Applied Materials, Inc. Multiple precursor cyclical deposition system
US6720027B2 (en) 2002-04-08 2004-04-13 Applied Materials, Inc. Cyclical deposition of a variable content titanium silicon nitride layer
US6869838B2 (en) 2002-04-09 2005-03-22 Applied Materials, Inc. Deposition of passivation layers for active matrix liquid crystal display (AMLCD) applications
US6875271B2 (en) 2002-04-09 2005-04-05 Applied Materials, Inc. Simultaneous cyclical deposition in different processing regions
US7279432B2 (en) 2002-04-16 2007-10-09 Applied Materials, Inc. System and method for forming an integrated barrier layer
US20040247787A1 (en) * 2002-04-19 2004-12-09 Mackie Neil M. Effluent pressure control for use in a processing system
US20040025787A1 (en) * 2002-04-19 2004-02-12 Selbrede Steven C. System for depositing a film onto a substrate using a low pressure gas precursor
US7589029B2 (en) 2002-05-02 2009-09-15 Micron Technology, Inc. Atomic layer deposition and conversion
US7160577B2 (en) 2002-05-02 2007-01-09 Micron Technology, Inc. Methods for atomic-layer deposition of aluminum oxides in integrated circuits
US7045430B2 (en) * 2002-05-02 2006-05-16 Micron Technology Inc. Atomic layer-deposited LaAlO3 films for gate dielectrics
US20040129212A1 (en) * 2002-05-20 2004-07-08 Gadgil Pradad N. Apparatus and method for delivery of reactive chemical precursors to the surface to be treated
US20040086434A1 (en) * 2002-11-04 2004-05-06 Gadgil Pradad N. Apparatus and method for treating objects with radicals generated from plasma
US7205218B2 (en) 2002-06-05 2007-04-17 Micron Technology, Inc. Method including forming gate dielectrics having multiple lanthanide oxide layers
US7135421B2 (en) 2002-06-05 2006-11-14 Micron Technology, Inc. Atomic layer-deposited hafnium aluminum oxide
US7221586B2 (en) 2002-07-08 2007-05-22 Micron Technology, Inc. Memory utilizing oxide nanolaminates
US7186385B2 (en) * 2002-07-17 2007-03-06 Applied Materials, Inc. Apparatus for providing gas to a processing chamber
US6955211B2 (en) 2002-07-17 2005-10-18 Applied Materials, Inc. Method and apparatus for gas temperature control in a semiconductor processing system
US7066194B2 (en) 2002-07-19 2006-06-27 Applied Materials, Inc. Valve design and configuration for fast delivery system
US6772072B2 (en) 2002-07-22 2004-08-03 Applied Materials, Inc. Method and apparatus for monitoring solid precursor delivery
US6915592B2 (en) 2002-07-29 2005-07-12 Applied Materials, Inc. Method and apparatus for generating gas to a processing chamber
US6921702B2 (en) 2002-07-30 2005-07-26 Micron Technology Inc. Atomic layer deposited nanolaminates of HfO2/ZrO2 films as gate dielectrics
US7153542B2 (en) * 2002-08-06 2006-12-26 Tegal Corporation Assembly line processing method
GB0218417D0 (en) 2002-08-08 2002-09-18 Seagate Technology Llc Combined atomic layer deposition and damascene processing for definition of narrow trenches
US7186630B2 (en) 2002-08-14 2007-03-06 Asm America, Inc. Deposition of amorphous silicon-containing films
US6884739B2 (en) 2002-08-15 2005-04-26 Micron Technology Inc. Lanthanide doped TiOx dielectric films by plasma oxidation
US20040071878A1 (en) * 2002-08-15 2004-04-15 Interuniversitair Microelektronica Centrum (Imec Vzw) Surface preparation using plasma for ALD Films
US20040036129A1 (en) * 2002-08-22 2004-02-26 Micron Technology, Inc. Atomic layer deposition of CMOS gates with variable work functions
US6967154B2 (en) * 2002-08-26 2005-11-22 Micron Technology, Inc. Enhanced atomic layer deposition
US7084078B2 (en) 2002-08-29 2006-08-01 Micron Technology, Inc. Atomic layer deposited lanthanide doped TiOx dielectric films
US6936086B2 (en) * 2002-09-11 2005-08-30 Planar Systems, Inc. High conductivity particle filter
US6821563B2 (en) 2002-10-02 2004-11-23 Applied Materials, Inc. Gas distribution system for cyclical layer deposition
US6770536B2 (en) 2002-10-03 2004-08-03 Agere Systems Inc. Process for semiconductor device fabrication in which a insulating layer is formed on a semiconductor substrate
US20040069227A1 (en) 2002-10-09 2004-04-15 Applied Materials, Inc. Processing chamber configured for uniform gas flow
US6905737B2 (en) 2002-10-11 2005-06-14 Applied Materials, Inc. Method of delivering activated species for rapid cyclical deposition
US6869818B2 (en) 2002-11-18 2005-03-22 Redwood Microsystems, Inc. Method for producing and testing a corrosion-resistant channel in a silicon device
US7101813B2 (en) 2002-12-04 2006-09-05 Micron Technology Inc. Atomic layer deposited Zr-Sn-Ti-O films
US6958302B2 (en) 2002-12-04 2005-10-25 Micron Technology, Inc. Atomic layer deposited Zr-Sn-Ti-O films using TiI4
US7262133B2 (en) 2003-01-07 2007-08-28 Applied Materials, Inc. Enhancement of copper line reliability using thin ALD tan film to cap the copper line
US20040134427A1 (en) * 2003-01-09 2004-07-15 Derderian Garo J. Deposition chamber surface enhancement and resulting deposition chambers
JP4528489B2 (ja) 2003-01-27 2010-08-18 独立行政法人理化学研究所 ｐ型半導体を用いた紫外発光素子
US6868859B2 (en) * 2003-01-29 2005-03-22 Applied Materials, Inc. Rotary gas valve for pulsing a gas
US6994319B2 (en) * 2003-01-29 2006-02-07 Applied Materials, Inc. Membrane gas valve for pulsing a gas
US7713592B2 (en) 2003-02-04 2010-05-11 Tegal Corporation Nanolayer deposition process
US7192892B2 (en) 2003-03-04 2007-03-20 Micron Technology, Inc. Atomic layer deposited dielectric layers
US20040177813A1 (en) 2003-03-12 2004-09-16 Applied Materials, Inc. Substrate support lift mechanism
US20040178175A1 (en) * 2003-03-12 2004-09-16 Pellin Michael J. Atomic layer deposition for high temperature superconductor material synthesis
US6955986B2 (en) 2003-03-27 2005-10-18 Asm International N.V. Atomic layer deposition methods for forming a multi-layer adhesion-barrier layer for integrated circuits
US6972055B2 (en) * 2003-03-28 2005-12-06 Finens Corporation Continuous flow deposition system
US7135369B2 (en) 2003-03-31 2006-11-14 Micron Technology, Inc. Atomic layer deposited ZrAlxOy dielectric layers including Zr4AlO9
US7294360B2 (en) 2003-03-31 2007-11-13 Planar Systems, Inc. Conformal coatings for micro-optical elements, and method for making the same
US7342984B1 (en) 2003-04-03 2008-03-11 Zilog, Inc. Counting clock cycles over the duration of a first character and using a remainder value to determine when to sample a bit of a second character
US20040198069A1 (en) 2003-04-04 2004-10-07 Applied Materials, Inc. Method for hafnium nitride deposition
US8298933B2 (en) 2003-04-11 2012-10-30 Novellus Systems, Inc. Conformal films on semiconductor substrates
US7842605B1 (en) 2003-04-11 2010-11-30 Novellus Systems, Inc. Atomic layer profiling of diffusion barrier and metal seed layers
US7183186B2 (en) 2003-04-22 2007-02-27 Micro Technology, Inc. Atomic layer deposited ZrTiO4 films
US20040211357A1 (en) * 2003-04-24 2004-10-28 Gadgil Pradad N. Method of manufacturing a gap-filled structure of a semiconductor device
KR20060079144A (ko) 2003-06-18 2006-07-05 어플라이드 머티어리얼스, 인코포레이티드 배리어 물질의 원자층 증착
US7192824B2 (en) 2003-06-24 2007-03-20 Micron Technology, Inc. Lanthanide oxide / hafnium oxide dielectric layers
DE602004027256D1 (de) * 2003-06-27 2010-07-01 Sundew Technologies Llc Vorrichtung und verfahren zur steuerung des dampfdrucks einer chemikalienquelle
US20100129548A1 (en) * 2003-06-27 2010-05-27 Sundew Technologies, Llc Ald apparatus and method
US7067407B2 (en) * 2003-08-04 2006-06-27 Asm International, N.V. Method of growing electrical conductors
US6818517B1 (en) 2003-08-29 2004-11-16 Asm International N.V. Methods of depositing two or more layers on a substrate in situ
US20050067103A1 (en) 2003-09-26 2005-03-31 Applied Materials, Inc. Interferometer endpoint monitoring device
US7803476B2 (en) 2003-11-07 2010-09-28 Gm Global Technology Operations, Inc. Electrical contact element for a fuel cell having a conductive monoatomic layer coating
US20050103264A1 (en) * 2003-11-13 2005-05-19 Frank Jansen Atomic layer deposition process and apparatus
US20050221004A1 (en) * 2004-01-20 2005-10-06 Kilpela Olli V Vapor reactant source system with choked-flow elements
US9039401B2 (en) 2006-02-27 2015-05-26 Microcontinuum, Inc. Formation of pattern replicating tools
US20050172897A1 (en) * 2004-02-09 2005-08-11 Frank Jansen Barrier layer process and arrangement
US7115304B2 (en) * 2004-02-19 2006-10-03 Nanosolar, Inc. High throughput surface treatment on coiled flexible substrates
US20050233477A1 (en) * 2004-03-05 2005-10-20 Tokyo Electron Limited Substrate processing apparatus, substrate processing method, and program for implementing the method
US20050210455A1 (en) * 2004-03-18 2005-09-22 International Business Machines Corporation Method for generating an executable workflow code from an unstructured cyclic process model
US7405143B2 (en) * 2004-03-25 2008-07-29 Asm International N.V. Method for fabricating a seed layer
US20050252449A1 (en) 2004-05-12 2005-11-17 Nguyen Son T Control of gas flow and delivery to suppress the formation of particles in an MOCVD/ALD system
JP4879509B2 (ja) * 2004-05-21 2012-02-22 株式会社アルバック 真空成膜装置
US8119210B2 (en) 2004-05-21 2012-02-21 Applied Materials, Inc. Formation of a silicon oxynitride layer on a high-k dielectric material
US8323754B2 (en) 2004-05-21 2012-12-04 Applied Materials, Inc. Stabilization of high-k dielectric materials
JP5179179B2 (ja) * 2004-06-28 2013-04-10 ケンブリッジ ナノテック インコーポレイテッド 蒸着システムおよび蒸着方法
US20060019493A1 (en) * 2004-07-15 2006-01-26 Li Wei M Methods of metallization for microelectronic devices utilizing metal oxide
US20060019029A1 (en) * 2004-07-20 2006-01-26 Hamer Kevin T Atomic layer deposition methods and apparatus
US7081421B2 (en) 2004-08-26 2006-07-25 Micron Technology, Inc. Lanthanide oxide dielectric layer
US7588988B2 (en) 2004-08-31 2009-09-15 Micron Technology, Inc. Method of forming apparatus having oxide films formed using atomic layer deposition
US7494939B2 (en) 2004-08-31 2009-02-24 Micron Technology, Inc. Methods for forming a lanthanum-metal oxide dielectric layer
US20060073276A1 (en) * 2004-10-04 2006-04-06 Eric Antonissen Multi-zone atomic layer deposition apparatus and method
US7235501B2 (en) 2004-12-13 2007-06-26 Micron Technology, Inc. Lanthanum hafnium oxide dielectrics
US7687383B2 (en) 2005-02-04 2010-03-30 Asm America, Inc. Methods of depositing electrically active doped crystalline Si-containing films
US20060177601A1 (en) * 2005-02-10 2006-08-10 Hyung-Sang Park Method of forming a ruthenium thin film using a plasma enhanced atomic layer deposition apparatus and the method thereof
US7374964B2 (en) 2005-02-10 2008-05-20 Micron Technology, Inc. Atomic layer deposition of CeO2/Al2O3 films as gate dielectrics
US7666773B2 (en) 2005-03-15 2010-02-23 Asm International N.V. Selective deposition of noble metal thin films
US7389023B2 (en) * 2005-03-15 2008-06-17 Hewlett-Packard Development Company, L.P. Method and apparatus for forming a photonic crystal
US7608549B2 (en) * 2005-03-15 2009-10-27 Asm America, Inc. Method of forming non-conformal layers
US8025922B2 (en) 2005-03-15 2011-09-27 Asm International N.V. Enhanced deposition of noble metals
US7687409B2 (en) 2005-03-29 2010-03-30 Micron Technology, Inc. Atomic layer deposited titanium silicon oxide films
WO2006106764A1 (ja) * 2005-03-30 2006-10-12 Matsushita Electric Industrial Co., Ltd. 伝送線路
US7662729B2 (en) 2005-04-28 2010-02-16 Micron Technology, Inc. Atomic layer deposition of a ruthenium layer to a lanthanide oxide dielectric layer
US7396415B2 (en) * 2005-06-02 2008-07-08 Asm America, Inc. Apparatus and methods for isolating chemical vapor reactions at a substrate surface
US7927948B2 (en) 2005-07-20 2011-04-19 Micron Technology, Inc. Devices with nanocrystals and methods of formation
US7473637B2 (en) 2005-07-20 2009-01-06 Micron Technology, Inc. ALD formed titanium nitride films
US8058644B1 (en) 2005-08-03 2011-11-15 Ari Aviram Nanostructure for molecular electronics comprising collinear metal lines defining precise nanoscale gap
US7402534B2 (en) 2005-08-26 2008-07-22 Applied Materials, Inc. Pretreatment processes within a batch ALD reactor
US8110469B2 (en) 2005-08-30 2012-02-07 Micron Technology, Inc. Graded dielectric layers
US20070054048A1 (en) * 2005-09-07 2007-03-08 Suvi Haukka Extended deposition range by hot spots
US7464917B2 (en) 2005-10-07 2008-12-16 Appiled Materials, Inc. Ampoule splash guard apparatus
US8993055B2 (en) 2005-10-27 2015-03-31 Asm International N.V. Enhanced thin film deposition
US20070128862A1 (en) 2005-11-04 2007-06-07 Paul Ma Apparatus and process for plasma-enhanced atomic layer deposition
JP4803578B2 (ja) 2005-12-08 2011-10-26 東京エレクトロン株式会社 成膜方法
WO2007075435A2 (en) * 2005-12-15 2007-07-05 Fluens Corporation Apparatus for reactive sputtering
JP2009521801A (ja) * 2005-12-22 2009-06-04 エーエスエム アメリカ インコーポレイテッド ドープされた半導体物質のエピタキシャル堆積
US7713584B2 (en) * 2005-12-22 2010-05-11 Asm International N.V. Process for producing oxide films
FI121341B (fi) * 2006-02-02 2010-10-15 Beneq Oy Hopean suojapinnoitus
KR101379015B1 (ko) 2006-02-15 2014-03-28 한국에이에스엠지니텍 주식회사 플라즈마 원자층 증착법을 이용한 루테늄 막 증착 방법 및고밀도 루테늄 층
US7709402B2 (en) 2006-02-16 2010-05-04 Micron Technology, Inc. Conductive layers for hafnium silicon oxynitride films
JP5121698B2 (ja) * 2006-03-06 2013-01-16 東京エレクトロン株式会社 プラズマ処理装置
US20070215036A1 (en) * 2006-03-15 2007-09-20 Hyung-Sang Park Method and apparatus of time and space co-divided atomic layer deposition
US20070218702A1 (en) * 2006-03-15 2007-09-20 Asm Japan K.K. Semiconductor-processing apparatus with rotating susceptor
US7235736B1 (en) 2006-03-18 2007-06-26 Solyndra, Inc. Monolithic integration of cylindrical solar cells
US8137464B2 (en) * 2006-03-26 2012-03-20 Lotus Applied Technology, Llc Atomic layer deposition system for coating flexible substrates
FR2900226B1 (fr) * 2006-04-25 2017-09-29 Messier Bugatti Four de traitement ou analogue
US7798096B2 (en) 2006-05-05 2010-09-21 Applied Materials, Inc. Plasma, UV and ion/neutral assisted ALD or CVD in a batch tool
US20070280895A1 (en) * 2006-06-02 2007-12-06 Weimer Alan W Coated particles and sunscreen and cosmetic products containing same
US20070281089A1 (en) * 2006-06-05 2007-12-06 General Electric Company Systems and methods for roll-to-roll atomic layer deposition on continuously fed objects
US8278176B2 (en) 2006-06-07 2012-10-02 Asm America, Inc. Selective epitaxial formation of semiconductor films
US7645696B1 (en) 2006-06-22 2010-01-12 Novellus Systems, Inc. Deposition of thin continuous PVD seed layers having improved adhesion to the barrier layer
US7855147B1 (en) 2006-06-22 2010-12-21 Novellus Systems, Inc. Methods and apparatus for engineering an interface between a diffusion barrier layer and a seed layer
US7801623B2 (en) * 2006-06-29 2010-09-21 Medtronic, Inc. Implantable medical device having a conformal coating
US7795160B2 (en) * 2006-07-21 2010-09-14 Asm America Inc. ALD of metal silicate films
US8187679B2 (en) * 2006-07-29 2012-05-29 Lotus Applied Technology, Llc Radical-enhanced atomic layer deposition system and method
US7601648B2 (en) 2006-07-31 2009-10-13 Applied Materials, Inc. Method for fabricating an integrated gate dielectric layer for field effect transistors
US7615486B2 (en) * 2007-04-17 2009-11-10 Lam Research Corporation Apparatus and method for integrated surface treatment and deposition for copper interconnect
US7563730B2 (en) 2006-08-31 2009-07-21 Micron Technology, Inc. Hafnium lanthanide oxynitride films
US8053372B1 (en) 2006-09-12 2011-11-08 Novellus Systems, Inc. Method of reducing plasma stabilization time in a cyclic deposition process
US7871678B1 (en) 2006-09-12 2011-01-18 Novellus Systems, Inc. Method of increasing the reactivity of a precursor in a cyclic deposition process
KR20080027009A (ko) * 2006-09-22 2008-03-26 에이에스엠지니텍코리아 주식회사 원자층 증착 장치 및 그를 이용한 다층막 증착 방법
JP2008078448A (ja) * 2006-09-22 2008-04-03 Hitachi Kokusai Electric Inc 基板処理装置
JP2010506408A (ja) 2006-10-05 2010-02-25 エーエスエム アメリカ インコーポレイテッド 金属シリケート膜のａｌｄ
US8986456B2 (en) 2006-10-10 2015-03-24 Asm America, Inc. Precursor delivery system
US8268409B2 (en) * 2006-10-25 2012-09-18 Asm America, Inc. Plasma-enhanced deposition of metal carbide films
US8795771B2 (en) 2006-10-27 2014-08-05 Sean T. Barry ALD of metal-containing films using cyclopentadienyl compounds
US8092695B2 (en) 2006-10-30 2012-01-10 Applied Materials, Inc. Endpoint detection for photomask etching
US7775508B2 (en) 2006-10-31 2010-08-17 Applied Materials, Inc. Ampoule for liquid draw and vapor draw with a continuous level sensor
US7611751B2 (en) * 2006-11-01 2009-11-03 Asm America, Inc. Vapor deposition of metal carbide films
US7727864B2 (en) 2006-11-01 2010-06-01 Asm America, Inc. Controlled composition using plasma-enhanced atomic layer deposition
US7510634B1 (en) 2006-11-10 2009-03-31 Novellus Systems, Inc. Apparatus and methods for deposition and/or etch selectivity
US7598170B2 (en) * 2007-01-26 2009-10-06 Asm America, Inc. Plasma-enhanced ALD of tantalum nitride films
US7595270B2 (en) * 2007-01-26 2009-09-29 Asm America, Inc. Passivated stoichiometric metal nitride films
US8821637B2 (en) 2007-01-29 2014-09-02 Applied Materials, Inc. Temperature controlled lid assembly for tungsten nitride deposition
US7682966B1 (en) 2007-02-01 2010-03-23 Novellus Systems, Inc. Multistep method of depositing metal seed layers
US8043432B2 (en) * 2007-02-12 2011-10-25 Tokyo Electron Limited Atomic layer deposition systems and methods
WO2008100963A1 (en) 2007-02-12 2008-08-21 Lotus Applied Technology, Llc Fabrication of composite materials using atomic layer deposition
US8025932B2 (en) * 2007-02-21 2011-09-27 Colorado School Of Mines Self-limiting thin film synthesis achieved by pulsed plasma-enhanced chemical vapor deposition
US20080241387A1 (en) * 2007-03-29 2008-10-02 Asm International N.V. Atomic layer deposition reactor
US20080241384A1 (en) * 2007-04-02 2008-10-02 Asm Genitech Korea Ltd. Lateral flow deposition apparatus and method of depositing film by using the apparatus
US7845546B2 (en) 2007-04-07 2010-12-07 Inficon Gmbh Method for producing a vacuum measuring cell of the membrane type
US7713874B2 (en) * 2007-05-02 2010-05-11 Asm America, Inc. Periodic plasma annealing in an ALD-type process
US7922880B1 (en) 2007-05-24 2011-04-12 Novellus Systems, Inc. Method and apparatus for increasing local plasma density in magnetically confined plasma
US7897516B1 (en) 2007-05-24 2011-03-01 Novellus Systems, Inc. Use of ultra-high magnetic fields in resputter and plasma etching
TWI398541B (zh) 2007-06-05 2013-06-11 羅門哈斯電子材料有限公司 有機金屬化合物
US7939932B2 (en) * 2007-06-20 2011-05-10 Analog Devices, Inc. Packaged chip devices with atomic layer deposition protective films
US7638170B2 (en) 2007-06-21 2009-12-29 Asm International N.V. Low resistivity metal carbonitride thin film deposition by atomic layer deposition
US8017182B2 (en) * 2007-06-21 2011-09-13 Asm International N.V. Method for depositing thin films by mixed pulsed CVD and ALD
US8142847B2 (en) 2007-07-13 2012-03-27 Rohm And Haas Electronic Materials Llc Precursor compositions and methods
KR20090018290A (ko) * 2007-08-17 2009-02-20 에이에스엠지니텍코리아 주식회사 증착 장치
US7759199B2 (en) 2007-09-19 2010-07-20 Asm America, Inc. Stressor for engineered strain on channel
US7659197B1 (en) 2007-09-21 2010-02-09 Novellus Systems, Inc. Selective resputtering of metal seed layers
KR101544198B1 (ko) 2007-10-17 2015-08-12 한국에이에스엠지니텍 주식회사 루테늄 막 형성 방법
US7939447B2 (en) 2007-10-26 2011-05-10 Asm America, Inc. Inhibitors for selective deposition of silicon containing films
KR101376336B1 (ko) 2007-11-27 2014-03-18 한국에이에스엠지니텍 주식회사 원자층 증착 장치
WO2009070574A2 (en) * 2007-11-27 2009-06-04 North Carolina State University Methods for modification of polymers, fibers and textile media
US7655564B2 (en) 2007-12-12 2010-02-02 Asm Japan, K.K. Method for forming Ta-Ru liner layer for Cu wiring
FI122749B (fi) * 2007-12-20 2012-06-29 Beneq Oy Pinnoitusmenetelmä
US7655543B2 (en) * 2007-12-21 2010-02-02 Asm America, Inc. Separate injection of reactive species in selective formation of films
US20100123993A1 (en) * 2008-02-13 2010-05-20 Herzel Laor Atomic layer deposition process for manufacture of battery electrodes, capacitors, resistors, and catalyzers
US8071066B1 (en) 2008-02-13 2011-12-06 Laor Consulting, LLC Method and apparatus for improving the quality of diamonds and other gemstones
US7799674B2 (en) 2008-02-19 2010-09-21 Asm Japan K.K. Ruthenium alloy film for copper interconnects
US8273178B2 (en) 2008-02-28 2012-09-25 Asm Genitech Korea Ltd. Thin film deposition apparatus and method of maintaining the same
US8545936B2 (en) 2008-03-28 2013-10-01 Asm International N.V. Methods for forming carbon nanotubes
US20090315093A1 (en) 2008-04-16 2009-12-24 Asm America, Inc. Atomic layer deposition of metal carbide films using aluminum hydrocarbon compounds
US8741062B2 (en) * 2008-04-22 2014-06-03 Picosun Oy Apparatus and methods for deposition reactors
US8383525B2 (en) 2008-04-25 2013-02-26 Asm America, Inc. Plasma-enhanced deposition process for forming a metal oxide thin film and related structures
US7666474B2 (en) 2008-05-07 2010-02-23 Asm America, Inc. Plasma-enhanced pulsed deposition of metal carbide films
KR101436564B1 (ko) * 2008-05-07 2014-09-02 한국에이에스엠지니텍 주식회사 비정질 실리콘 박막 형성 방법
US8076237B2 (en) * 2008-05-09 2011-12-13 Asm America, Inc. Method and apparatus for 3D interconnect
US8017523B1 (en) 2008-05-16 2011-09-13 Novellus Systems, Inc. Deposition of doped copper seed layers having improved reliability
US20090291209A1 (en) * 2008-05-20 2009-11-26 Asm International N.V. Apparatus and method for high-throughput atomic layer deposition
US9238867B2 (en) 2008-05-20 2016-01-19 Asm International N.V. Apparatus and method for high-throughput atomic layer deposition
EP2159304A1 (en) * 2008-08-27 2010-03-03 Nederlandse Organisatie voor toegepast- natuurwetenschappelijk onderzoek TNO Apparatus and method for atomic layer deposition
US8084104B2 (en) 2008-08-29 2011-12-27 Asm Japan K.K. Atomic composition controlled ruthenium alloy film formed by plasma-enhanced atomic layer deposition
US8133555B2 (en) 2008-10-14 2012-03-13 Asm Japan K.K. Method for forming metal film by ALD using beta-diketone metal complex
US8146896B2 (en) 2008-10-31 2012-04-03 Applied Materials, Inc. Chemical precursor ampoule for vapor deposition processes
US10378106B2 (en) 2008-11-14 2019-08-13 Asm Ip Holding B.V. Method of forming insulation film by modified PEALD
JP5384291B2 (ja) 2008-11-26 2014-01-08 株式会社日立国際電気 半導体装置の製造方法、基板処理方法及び基板処理装置
US20100136313A1 (en) * 2008-12-01 2010-06-03 Asm Japan K.K. Process for forming high resistivity thin metallic film
KR20110100618A (ko) * 2008-12-05 2011-09-14 로터스 어플라이드 테크놀로지, 엘엘씨 향상된 장벽 층 특성을 갖는 얇은 막의 고속 증착
US9379011B2 (en) 2008-12-19 2016-06-28 Asm International N.V. Methods for depositing nickel films and for making nickel silicide and nickel germanide
US7927942B2 (en) * 2008-12-19 2011-04-19 Asm International N.V. Selective silicide process
US8557702B2 (en) 2009-02-02 2013-10-15 Asm America, Inc. Plasma-enhanced atomic layers deposition of conductive material over dielectric layers
US20100221426A1 (en) * 2009-03-02 2010-09-02 Fluens Corporation Web Substrate Deposition System
US20100227476A1 (en) * 2009-03-04 2010-09-09 Peck John D Atomic layer deposition processes
NL2002590C2 (en) * 2009-03-04 2010-09-07 Univ Delft Technology Apparatus and process for atomic or molecular layer deposition onto particles during pneumatic transport.
US9394608B2 (en) 2009-04-06 2016-07-19 Asm America, Inc. Semiconductor processing reactor and components thereof
US8486191B2 (en) 2009-04-07 2013-07-16 Asm America, Inc. Substrate reactor with adjustable injectors for mixing gases within reaction chamber
US20100266765A1 (en) * 2009-04-21 2010-10-21 White Carl L Method and apparatus for growing a thin film onto a substrate
US8071452B2 (en) * 2009-04-27 2011-12-06 Asm America, Inc. Atomic layer deposition of hafnium lanthanum oxides
DE102009033686A1 (de) 2009-07-17 2011-01-20 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauteil und Verfahren zur Herstellung eines anorganischen optoelektronischen Halbleiterbauteils
US9327416B2 (en) 2009-07-17 2016-05-03 The Gillette Company Atomic layer deposition coatings on razor components
US8329569B2 (en) 2009-07-31 2012-12-11 Asm America, Inc. Deposition of ruthenium or ruthenium dioxide
US8877655B2 (en) 2010-05-07 2014-11-04 Asm America, Inc. Systems and methods for thin-film deposition of metal oxides using excited nitrogen-oxygen species
US8883270B2 (en) 2009-08-14 2014-11-11 Asm America, Inc. Systems and methods for thin-film deposition of metal oxides using excited nitrogen—oxygen species
US8802201B2 (en) 2009-08-14 2014-08-12 Asm America, Inc. Systems and methods for thin-film deposition of metal oxides using excited nitrogen-oxygen species
US9117773B2 (en) * 2009-08-26 2015-08-25 Asm America, Inc. High concentration water pulses for atomic layer deposition
EP2339048B1 (en) 2009-09-14 2016-12-07 Rohm and Haas Electronic Materials, L.L.C. Method for depositing organometallic compounds
JP5809152B2 (ja) 2009-10-20 2015-11-10 エーエスエム インターナショナル エヌ．ヴェー．Ａｓｍ Ｉｎｔｅｒｎａｔｉｏｎａｌ Ｎ．Ｖ． 誘電体膜をパッシベーションする方法
US8367528B2 (en) 2009-11-17 2013-02-05 Asm America, Inc. Cyclical epitaxial deposition and etch
PT104865A (pt) 2009-12-09 2011-06-09 Univ Aveiro Barreira metálica de magnésio contra a difusão de oxigénio aplicada a dispositivos de microelectrónica
JP5482196B2 (ja) * 2009-12-25 2014-04-23 東京エレクトロン株式会社 成膜装置、成膜方法及び記憶媒体
US8637123B2 (en) * 2009-12-29 2014-01-28 Lotus Applied Technology, Llc Oxygen radical generation for radical-enhanced thin film deposition
US20110293830A1 (en) 2010-02-25 2011-12-01 Timo Hatanpaa Precursors and methods for atomic layer deposition of transition metal oxides
JP5543251B2 (ja) * 2010-03-23 2014-07-09 スタンレー電気株式会社 イオンプレーティング法を用いた成膜方法およびそれに用いられる装置
TW201134969A (en) * 2010-04-09 2011-10-16 Hon Hai Prec Ind Co Ltd Coating bracket and coating device using same
KR20130055606A (ko) * 2010-04-15 2013-05-28 노벨러스 시스템즈, 인코포레이티드 가스 및 액체 주입 방법들 및 장치
KR101791033B1 (ko) 2010-07-23 2017-10-27 로터스 어플라이드 테크놀로지, 엘엘씨 롤-투-롤 박막 증착을 위한 유연한 웹 기재의 한쪽 측면과 접촉하는 기재 이동 메커니즘
US8778204B2 (en) 2010-10-29 2014-07-15 Applied Materials, Inc. Methods for reducing photoresist interference when monitoring a target layer in a plasma process
KR101881181B1 (ko) 2010-11-04 2018-08-16 노벨러스 시스템즈, 인코포레이티드 탄탈륨의 이온 유도 원자층 증착
KR102111702B1 (ko) * 2011-04-07 2020-05-15 피코순 오와이 플라즈마 소오스를 갖는 원자층 퇴적
US8871617B2 (en) 2011-04-22 2014-10-28 Asm Ip Holding B.V. Deposition and reduction of mixed metal oxide thin films
US8809170B2 (en) 2011-05-19 2014-08-19 Asm America Inc. High throughput cyclical epitaxial deposition and etch process
US9312155B2 (en) 2011-06-06 2016-04-12 Asm Japan K.K. High-throughput semiconductor-processing apparatus equipped with multiple dual-chamber modules
US9793148B2 (en) 2011-06-22 2017-10-17 Asm Japan K.K. Method for positioning wafers in multiple wafer transport
US10364496B2 (en) 2011-06-27 2019-07-30 Asm Ip Holding B.V. Dual section module having shared and unshared mass flow controllers
US10707082B2 (en) * 2011-07-06 2020-07-07 Asm International N.V. Methods for depositing thin films comprising indium nitride by atomic layer deposition
US10854498B2 (en) 2011-07-15 2020-12-01 Asm Ip Holding B.V. Wafer-supporting device and method for producing same
US20130023129A1 (en) 2011-07-20 2013-01-24 Asm America, Inc. Pressure transmitter for a semiconductor processing environment
US9062390B2 (en) 2011-09-12 2015-06-23 Asm International N.V. Crystalline strontium titanate and methods of forming the same
US8961804B2 (en) 2011-10-25 2015-02-24 Applied Materials, Inc. Etch rate detection for photomask etching
US9341296B2 (en) 2011-10-27 2016-05-17 Asm America, Inc. Heater jacket for a fluid line
US9096931B2 (en) 2011-10-27 2015-08-04 Asm America, Inc Deposition valve assembly and method of heating the same
US9017481B1 (en) 2011-10-28 2015-04-28 Asm America, Inc. Process feed management for semiconductor substrate processing
US8808559B2 (en) 2011-11-22 2014-08-19 Applied Materials, Inc. Etch rate detection for reflective multi-material layers etching
US9167625B2 (en) 2011-11-23 2015-10-20 Asm Ip Holding B.V. Radiation shielding for a substrate holder
US9005539B2 (en) 2011-11-23 2015-04-14 Asm Ip Holding B.V. Chamber sealing member
US8900469B2 (en) 2011-12-19 2014-12-02 Applied Materials, Inc. Etch rate detection for anti-reflective coating layer and absorber layer etching
US20130171350A1 (en) * 2011-12-29 2013-07-04 Intermolecular Inc. High Throughput Processing Using Metal Organic Chemical Vapor Deposition
US8778081B2 (en) * 2012-01-04 2014-07-15 Colorado State University Research Foundation Process and hardware for deposition of complex thin-film alloys over large areas
US9202727B2 (en) 2012-03-02 2015-12-01 ASM IP Holding Susceptor heater shim
US8946830B2 (en) 2012-04-04 2015-02-03 Asm Ip Holdings B.V. Metal oxide protective layer for a semiconductor device
TWI622664B (zh) 2012-05-02 2018-05-01 Ａｓｍ智慧財產控股公司 相穩定薄膜，包括該薄膜之結構及裝置，及其形成方法
US8728832B2 (en) 2012-05-07 2014-05-20 Asm Ip Holdings B.V. Semiconductor device dielectric interface layer
KR20130142869A (ko) * 2012-06-20 2013-12-30 주식회사 엠티에스나노테크 원자층 증착 장치 및 방법
US8933375B2 (en) 2012-06-27 2015-01-13 Asm Ip Holding B.V. Susceptor heater and method of heating a substrate
US9558931B2 (en) 2012-07-27 2017-01-31 Asm Ip Holding B.V. System and method for gas-phase sulfur passivation of a semiconductor surface
US9117866B2 (en) 2012-07-31 2015-08-25 Asm Ip Holding B.V. Apparatus and method for calculating a wafer position in a processing chamber under process conditions
US9659799B2 (en) 2012-08-28 2017-05-23 Asm Ip Holding B.V. Systems and methods for dynamic semiconductor process scheduling
US9169975B2 (en) 2012-08-28 2015-10-27 Asm Ip Holding B.V. Systems and methods for mass flow controller verification
US9021985B2 (en) 2012-09-12 2015-05-05 Asm Ip Holdings B.V. Process gas management for an inductively-coupled plasma deposition reactor
US9324811B2 (en) 2012-09-26 2016-04-26 Asm Ip Holding B.V. Structures and devices including a tensile-stressed silicon arsenic layer and methods of forming same
US10714315B2 (en) 2012-10-12 2020-07-14 Asm Ip Holdings B.V. Semiconductor reaction chamber showerhead
US9805939B2 (en) 2012-10-12 2017-10-31 Applied Materials, Inc. Dual endpoint detection for advanced phase shift and binary photomasks
US20140134849A1 (en) * 2012-11-09 2014-05-15 Intermolecular Inc. Combinatorial Site Isolated Plasma Assisted Deposition
US8778574B2 (en) 2012-11-30 2014-07-15 Applied Materials, Inc. Method for etching EUV material layers utilized to form a photomask
US9640416B2 (en) 2012-12-26 2017-05-02 Asm Ip Holding B.V. Single-and dual-chamber module-attachable wafer-handling chamber
US20160376700A1 (en) 2013-02-01 2016-12-29 Asm Ip Holding B.V. System for treatment of deposition reactor
US8894870B2 (en) 2013-02-01 2014-11-25 Asm Ip Holding B.V. Multi-step method and apparatus for etching compounds containing a metal
WO2014131043A1 (en) 2013-02-25 2014-08-28 Solan, LLC Methods for fabricating graphite-based structures and devices made therefrom
US9484191B2 (en) 2013-03-08 2016-11-01 Asm Ip Holding B.V. Pulsed remote plasma method and system
US9589770B2 (en) 2013-03-08 2017-03-07 Asm Ip Holding B.V. Method and systems for in-situ formation of intermediate reactive species
US9412602B2 (en) 2013-03-13 2016-08-09 Asm Ip Holding B.V. Deposition of smooth metal nitride films
US8846550B1 (en) 2013-03-14 2014-09-30 Asm Ip Holding B.V. Silane or borane treatment of metal thin films
US8841182B1 (en) 2013-03-14 2014-09-23 Asm Ip Holding B.V. Silane and borane treatments for titanium carbide films
US9589797B2 (en) 2013-05-17 2017-03-07 Microcontinuum, Inc. Tools and methods for producing nanoantenna electronic devices
US8993054B2 (en) 2013-07-12 2015-03-31 Asm Ip Holding B.V. Method and system to reduce outgassing in a reaction chamber
US9018111B2 (en) 2013-07-22 2015-04-28 Asm Ip Holding B.V. Semiconductor reaction chamber with plasma capabilities
US9793115B2 (en) 2013-08-14 2017-10-17 Asm Ip Holding B.V. Structures and devices including germanium-tin films and methods of forming same
US9396934B2 (en) 2013-08-14 2016-07-19 Asm Ip Holding B.V. Methods of forming films including germanium tin and structures and devices including the films
US9214254B2 (en) 2013-09-26 2015-12-15 Eastman Kodak Company Ultra-thin AZO with nano-layer alumina passivation
US9240412B2 (en) 2013-09-27 2016-01-19 Asm Ip Holding B.V. Semiconductor structure and device and methods of forming same using selective epitaxial process
US9556516B2 (en) 2013-10-09 2017-01-31 ASM IP Holding B.V Method for forming Ti-containing film by PEALD using TDMAT or TDEAT
US9605343B2 (en) 2013-11-13 2017-03-28 Asm Ip Holding B.V. Method for forming conformal carbon films, structures conformal carbon film, and system of forming same
US10179947B2 (en) 2013-11-26 2019-01-15 Asm Ip Holding B.V. Method for forming conformal nitrided, oxidized, or carbonized dielectric film by atomic layer deposition
US9394609B2 (en) 2014-02-13 2016-07-19 Asm Ip Holding B.V. Atomic layer deposition of aluminum fluoride thin films
US10683571B2 (en) 2014-02-25 2020-06-16 Asm Ip Holding B.V. Gas supply manifold and method of supplying gases to chamber using same
US9447498B2 (en) 2014-03-18 2016-09-20 Asm Ip Holding B.V. Method for performing uniform processing in gas system-sharing multiple reaction chambers
US10167557B2 (en) 2014-03-18 2019-01-01 Asm Ip Holding B.V. Gas distribution system, reactor including the system, and methods of using the same
US11015245B2 (en) 2014-03-19 2021-05-25 Asm Ip Holding B.V. Gas-phase reactor and system having exhaust plenum and components thereof
KR20150109984A (ko) * 2014-03-21 2015-10-02 삼성전자주식회사 기체 차단 필름, 이를 포함하는 냉장고 및 기체 차단 필름의 제조방법
WO2015153584A1 (en) 2014-04-01 2015-10-08 Pneumaticoat Technologies Llc Passive electronics components comprising coated nanoparticles and methods for producing and using the same
US10569330B2 (en) 2014-04-01 2020-02-25 Forge Nano, Inc. Energy storage devices having coated passive components
DE102014105219A1 (de) 2014-04-11 2015-10-15 Plasma Electronic Gmbh Analysebehältnis sowie Analysesystem
RU2554819C1 (ru) * 2014-04-16 2015-06-27 Общество с ограниченной ответственностью "КОНМЕТ" Способ получения биоактивного покрытия на имплантируемом в костную ткань человека титановом имплантате
US10643925B2 (en) 2014-04-17 2020-05-05 Asm Ip Holding B.V. Fluorine-containing conductive films
US9404587B2 (en) 2014-04-24 2016-08-02 ASM IP Holding B.V Lockout tagout for semiconductor vacuum valve
DE102014010241A1 (de) 2014-05-30 2015-12-03 Schott Ag Körper, bevorzugt mit einer Oberfläche umfassend bevorzugt einen Glaskörper mit einer Glasoberfläche und Verfahren zur Herstellung desselben
US10858737B2 (en) 2014-07-28 2020-12-08 Asm Ip Holding B.V. Showerhead assembly and components thereof
US9543180B2 (en) 2014-08-01 2017-01-10 Asm Ip Holding B.V. Apparatus and method for transporting wafers between wafer carrier and process tool under vacuum
US9890456B2 (en) 2014-08-21 2018-02-13 Asm Ip Holding B.V. Method and system for in situ formation of gas-phase compounds
US10941490B2 (en) 2014-10-07 2021-03-09 Asm Ip Holding B.V. Multiple temperature range susceptor, assembly, reactor and system including the susceptor, and methods of using the same
US9657845B2 (en) 2014-10-07 2017-05-23 Asm Ip Holding B.V. Variable conductance gas distribution apparatus and method
US10002936B2 (en) 2014-10-23 2018-06-19 Asm Ip Holding B.V. Titanium aluminum and tantalum aluminum thin films
KR102300403B1 (ko) 2014-11-19 2021-09-09 에이에스엠 아이피 홀딩 비.브이. 박막 증착 방법
KR102263121B1 (ko) 2014-12-22 2021-06-09 에이에스엠 아이피 홀딩 비.브이. 반도체 소자 및 그 제조 방법
KR102405123B1 (ko) * 2015-01-29 2022-06-08 삼성디스플레이 주식회사 표시 장치의 제조 장치 및 표시 장치의 제조 방법
US9478415B2 (en) 2015-02-13 2016-10-25 Asm Ip Holding B.V. Method for forming film having low resistance and shallow junction depth
US10529542B2 (en) 2015-03-11 2020-01-07 Asm Ip Holdings B.V. Cross-flow reactor and method
US10276355B2 (en) 2015-03-12 2019-04-30 Asm Ip Holding B.V. Multi-zone reactor, system including the reactor, and method of using the same
US10458018B2 (en) 2015-06-26 2019-10-29 Asm Ip Holding B.V. Structures including metal carbide material, devices including the structures, and methods of forming same
US10062567B2 (en) * 2015-06-30 2018-08-28 International Business Machines Corporation Reducing autodoping of III-V semiconductors by atomic layer epitaxy (ALE)
US10600673B2 (en) 2015-07-07 2020-03-24 Asm Ip Holding B.V. Magnetic susceptor to baseplate seal
US9899291B2 (en) 2015-07-13 2018-02-20 Asm Ip Holding B.V. Method for protecting layer by forming hydrocarbon-based extremely thin film
US10043661B2 (en) 2015-07-13 2018-08-07 Asm Ip Holding B.V. Method for protecting layer by forming hydrocarbon-based extremely thin film
US10083836B2 (en) 2015-07-24 2018-09-25 Asm Ip Holding B.V. Formation of boron-doped titanium metal films with high work function
US10087525B2 (en) 2015-08-04 2018-10-02 Asm Ip Holding B.V. Variable gap hard stop design
US9647114B2 (en) 2015-08-14 2017-05-09 Asm Ip Holding B.V. Methods of forming highly p-type doped germanium tin films and structures and devices including the films
US9711345B2 (en) 2015-08-25 2017-07-18 Asm Ip Holding B.V. Method for forming aluminum nitride-based film by PEALD
KR102420015B1 (ko) 2015-08-28 2022-07-12 삼성전자주식회사 Cs-ald 장치의 샤워헤드
CN107949655B (zh) * 2015-09-02 2020-12-29 Beneq有限公司 用于处理基材表面的设备和操作该设备的方法
US9960072B2 (en) 2015-09-29 2018-05-01 Asm Ip Holding B.V. Variable adjustment for precise matching of multiple chamber cavity housings
US9607842B1 (en) 2015-10-02 2017-03-28 Asm Ip Holding B.V. Methods of forming metal silicides
US9909214B2 (en) 2015-10-15 2018-03-06 Asm Ip Holding B.V. Method for depositing dielectric film in trenches by PEALD
US9941425B2 (en) 2015-10-16 2018-04-10 Asm Ip Holdings B.V. Photoactive devices and materials
US10211308B2 (en) 2015-10-21 2019-02-19 Asm Ip Holding B.V. NbMC layers
DE102015118041A1 (de) 2015-10-22 2017-04-27 Osram Opto Semiconductors Gmbh Leuchtdiodenchip und Verfahren zur Herstellung eines Leuchtdiodenchips
US10322384B2 (en) 2015-11-09 2019-06-18 Asm Ip Holding B.V. Counter flow mixer for process chamber
US9455138B1 (en) 2015-11-10 2016-09-27 Asm Ip Holding B.V. Method for forming dielectric film in trenches by PEALD using H-containing gas
US9786491B2 (en) 2015-11-12 2017-10-10 Asm Ip Holding B.V. Formation of SiOCN thin films
US9786492B2 (en) 2015-11-12 2017-10-10 Asm Ip Holding B.V. Formation of SiOCN thin films
US9905420B2 (en) 2015-12-01 2018-02-27 Asm Ip Holding B.V. Methods of forming silicon germanium tin films and structures and devices including the films
JP6697706B2 (ja) * 2015-12-07 2020-05-27 凸版印刷株式会社 原子層堆積装置
US9873943B2 (en) 2015-12-15 2018-01-23 Taiwan Semiconductor Manufacturing Co., Ltd. Apparatus and method for spatial atomic layer deposition
US9607837B1 (en) 2015-12-21 2017-03-28 Asm Ip Holding B.V. Method for forming silicon oxide cap layer for solid state diffusion process
US9627221B1 (en) 2015-12-28 2017-04-18 Asm Ip Holding B.V. Continuous process incorporating atomic layer etching
US9735024B2 (en) 2015-12-28 2017-08-15 Asm Ip Holding B.V. Method of atomic layer etching using functional group-containing fluorocarbon
US11139308B2 (en) 2015-12-29 2021-10-05 Asm Ip Holding B.V. Atomic layer deposition of III-V compounds to form V-NAND devices
US9754779B1 (en) 2016-02-19 2017-09-05 Asm Ip Holding B.V. Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches
US10468251B2 (en) 2016-02-19 2019-11-05 Asm Ip Holding B.V. Method for forming spacers using silicon nitride film for spacer-defined multiple patterning
US10529554B2 (en) 2016-02-19 2020-01-07 Asm Ip Holding B.V. Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches
US10501866B2 (en) 2016-03-09 2019-12-10 Asm Ip Holding B.V. Gas distribution apparatus for improved film uniformity in an epitaxial system
US10343920B2 (en) 2016-03-18 2019-07-09 Asm Ip Holding B.V. Aligned carbon nanotubes
US9892913B2 (en) 2016-03-24 2018-02-13 Asm Ip Holding B.V. Radial and thickness control via biased multi-port injection settings
US10865475B2 (en) 2016-04-21 2020-12-15 Asm Ip Holding B.V. Deposition of metal borides and silicides
US10190213B2 (en) 2016-04-21 2019-01-29 Asm Ip Holding B.V. Deposition of metal borides
US10087522B2 (en) 2016-04-21 2018-10-02 Asm Ip Holding B.V. Deposition of metal borides
US10032628B2 (en) 2016-05-02 2018-07-24 Asm Ip Holding B.V. Source/drain performance through conformal solid state doping
US10367080B2 (en) 2016-05-02 2019-07-30 Asm Ip Holding B.V. Method of forming a germanium oxynitride film
KR102378021B1 (ko) 2016-05-06 2022-03-23 에이에스엠 아이피 홀딩 비.브이. SiOC 박막의 형성
KR102592471B1 (ko) 2016-05-17 2023-10-20 에이에스엠 아이피 홀딩 비.브이. 금속 배선 형성 방법 및 이를 이용한 반도체 장치의 제조 방법
US11453943B2 (en) 2016-05-25 2022-09-27 Asm Ip Holding B.V. Method for forming carbon-containing silicon/metal oxide or nitride film by ALD using silicon precursor and hydrocarbon precursor
US10388509B2 (en) 2016-06-28 2019-08-20 Asm Ip Holding B.V. Formation of epitaxial layers via dislocation filtering
US9859151B1 (en) 2016-07-08 2018-01-02 Asm Ip Holding B.V. Selective film deposition method to form air gaps
US10612137B2 (en) 2016-07-08 2020-04-07 Asm Ip Holdings B.V. Organic reactants for atomic layer deposition
US9793135B1 (en) 2016-07-14 2017-10-17 ASM IP Holding B.V Method of cyclic dry etching using etchant film
US10714385B2 (en) 2016-07-19 2020-07-14 Asm Ip Holding B.V. Selective deposition of tungsten
US10619243B2 (en) 2016-07-22 2020-04-14 Triratna P. Muneshwar Method to improve precursor utilization in pulsed atomic layer processes
US10381226B2 (en) 2016-07-27 2019-08-13 Asm Ip Holding B.V. Method of processing substrate
US10177025B2 (en) 2016-07-28 2019-01-08 Asm Ip Holding B.V. Method and apparatus for filling a gap
US9887082B1 (en) 2016-07-28 2018-02-06 Asm Ip Holding B.V. Method and apparatus for filling a gap
US9812320B1 (en) 2016-07-28 2017-11-07 Asm Ip Holding B.V. Method and apparatus for filling a gap
KR102532607B1 (ko) 2016-07-28 2023-05-15 에이에스엠 아이피 홀딩 비.브이. 기판 가공 장치 및 그 동작 방법
US10395919B2 (en) 2016-07-28 2019-08-27 Asm Ip Holding B.V. Method and apparatus for filling a gap
KR102613349B1 (ko) 2016-08-25 2023-12-14 에이에스엠 아이피 홀딩 비.브이. 배기 장치 및 이를 이용한 기판 가공 장치와 박막 제조 방법
US10090316B2 (en) 2016-09-01 2018-10-02 Asm Ip Holding B.V. 3D stacked multilayer semiconductor memory using doped select transistor channel
US10410943B2 (en) 2016-10-13 2019-09-10 Asm Ip Holding B.V. Method for passivating a surface of a semiconductor and related systems
US10643826B2 (en) 2016-10-26 2020-05-05 Asm Ip Holdings B.V. Methods for thermally calibrating reaction chambers
US11532757B2 (en) 2016-10-27 2022-12-20 Asm Ip Holding B.V. Deposition of charge trapping layers
US10435790B2 (en) 2016-11-01 2019-10-08 Asm Ip Holding B.V. Method of subatmospheric plasma-enhanced ALD using capacitively coupled electrodes with narrow gap
US10643904B2 (en) 2016-11-01 2020-05-05 Asm Ip Holdings B.V. Methods for forming a semiconductor device and related semiconductor device structures
US10229833B2 (en) 2016-11-01 2019-03-12 Asm Ip Holding B.V. Methods for forming a transition metal nitride film on a substrate by atomic layer deposition and related semiconductor device structures
US10714350B2 (en) 2016-11-01 2020-07-14 ASM IP Holdings, B.V. Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures
US10134757B2 (en) 2016-11-07 2018-11-20 Asm Ip Holding B.V. Method of processing a substrate and a device manufactured by using the method
KR102546317B1 (ko) 2016-11-15 2023-06-21 에이에스엠 아이피 홀딩 비.브이. 기체 공급 유닛 및 이를 포함하는 기판 처리 장치
US10340135B2 (en) 2016-11-28 2019-07-02 Asm Ip Holding B.V. Method of topologically restricted plasma-enhanced cyclic deposition of silicon or metal nitride
US10186420B2 (en) 2016-11-29 2019-01-22 Asm Ip Holding B.V. Formation of silicon-containing thin films
KR20180068582A (ko) 2016-12-14 2018-06-22 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
US9916980B1 (en) 2016-12-15 2018-03-13 Asm Ip Holding B.V. Method of forming a structure on a substrate
US11581186B2 (en) 2016-12-15 2023-02-14 Asm Ip Holding B.V. Sequential infiltration synthesis apparatus
US11447861B2 (en) * 2016-12-15 2022-09-20 Asm Ip Holding B.V. Sequential infiltration synthesis apparatus and a method of forming a patterned structure
KR20180070971A (ko) 2016-12-19 2018-06-27 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
US10269558B2 (en) 2016-12-22 2019-04-23 Asm Ip Holding B.V. Method of forming a structure on a substrate
US10867788B2 (en) 2016-12-28 2020-12-15 Asm Ip Holding B.V. Method of forming a structure on a substrate
US11390950B2 (en) 2017-01-10 2022-07-19 Asm Ip Holding B.V. Reactor system and method to reduce residue buildup during a film deposition process
US10655221B2 (en) 2017-02-09 2020-05-19 Asm Ip Holding B.V. Method for depositing oxide film by thermal ALD and PEALD
US10468261B2 (en) 2017-02-15 2019-11-05 Asm Ip Holding B.V. Methods for forming a metallic film on a substrate by cyclical deposition and related semiconductor device structures
US10529563B2 (en) 2017-03-29 2020-01-07 Asm Ip Holdings B.V. Method for forming doped metal oxide films on a substrate by cyclical deposition and related semiconductor device structures
US10283353B2 (en) 2017-03-29 2019-05-07 Asm Ip Holding B.V. Method of reforming insulating film deposited on substrate with recess pattern
US10103040B1 (en) 2017-03-31 2018-10-16 Asm Ip Holding B.V. Apparatus and method for manufacturing a semiconductor device
USD830981S1 (en) 2017-04-07 2018-10-16 Asm Ip Holding B.V. Susceptor for semiconductor substrate processing apparatus
US20210087687A1 (en) * 2017-04-10 2021-03-25 Picosun Oy Uniform deposition
US10847529B2 (en) 2017-04-13 2020-11-24 Asm Ip Holding B.V. Substrate processing method and device manufactured by the same
KR102457289B1 (ko) 2017-04-25 2022-10-21 에이에스엠 아이피 홀딩 비.브이. 박막 증착 방법 및 반도체 장치의 제조 방법
US10504901B2 (en) 2017-04-26 2019-12-10 Asm Ip Holding B.V. Substrate processing method and device manufactured using the same
CN114875388A (zh) 2017-05-05 2022-08-09 Asm Ip 控股有限公司 用于受控形成含氧薄膜的等离子体增强沉积方法
US10770286B2 (en) 2017-05-08 2020-09-08 Asm Ip Holdings B.V. Methods for selectively forming a silicon nitride film on a substrate and related semiconductor device structures
US10892156B2 (en) 2017-05-08 2021-01-12 Asm Ip Holding B.V. Methods for forming a silicon nitride film on a substrate and related semiconductor device structures
US10446393B2 (en) 2017-05-08 2019-10-15 Asm Ip Holding B.V. Methods for forming silicon-containing epitaxial layers and related semiconductor device structures
US10504742B2 (en) 2017-05-31 2019-12-10 Asm Ip Holding B.V. Method of atomic layer etching using hydrogen plasma
US10886123B2 (en) 2017-06-02 2021-01-05 Asm Ip Holding B.V. Methods for forming low temperature semiconductor layers and related semiconductor device structures
US11306395B2 (en) 2017-06-28 2022-04-19 Asm Ip Holding B.V. Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus
US10685834B2 (en) 2017-07-05 2020-06-16 Asm Ip Holdings B.V. Methods for forming a silicon germanium tin layer and related semiconductor device structures
KR20190009245A (ko) 2017-07-18 2019-01-28 에이에스엠 아이피 홀딩 비.브이. 반도체 소자 구조물 형성 방법 및 관련된 반도체 소자 구조물
US11018002B2 (en) 2017-07-19 2021-05-25 Asm Ip Holding B.V. Method for selectively depositing a Group IV semiconductor and related semiconductor device structures
US10541333B2 (en) 2017-07-19 2020-01-21 Asm Ip Holding B.V. Method for depositing a group IV semiconductor and related semiconductor device structures
US11374112B2 (en) 2017-07-19 2022-06-28 Asm Ip Holding B.V. Method for depositing a group IV semiconductor and related semiconductor device structures
US10312055B2 (en) 2017-07-26 2019-06-04 Asm Ip Holding B.V. Method of depositing film by PEALD using negative bias
US10590535B2 (en) 2017-07-26 2020-03-17 Asm Ip Holdings B.V. Chemical treatment, deposition and/or infiltration apparatus and method for using the same
US10605530B2 (en) 2017-07-26 2020-03-31 Asm Ip Holding B.V. Assembly of a liner and a flange for a vertical furnace as well as the liner and the vertical furnace
US10692741B2 (en) 2017-08-08 2020-06-23 Asm Ip Holdings B.V. Radiation shield
US10770336B2 (en) 2017-08-08 2020-09-08 Asm Ip Holding B.V. Substrate lift mechanism and reactor including same
US11139191B2 (en) 2017-08-09 2021-10-05 Asm Ip Holding B.V. Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith
US10249524B2 (en) 2017-08-09 2019-04-02 Asm Ip Holding B.V. Cassette holder assembly for a substrate cassette and holding member for use in such assembly
US11769682B2 (en) 2017-08-09 2023-09-26 Asm Ip Holding B.V. Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith
US10236177B1 (en) 2017-08-22 2019-03-19 ASM IP Holding B.V.. Methods for depositing a doped germanium tin semiconductor and related semiconductor device structures
USD900036S1 (en) 2017-08-24 2020-10-27 Asm Ip Holding B.V. Heater electrical connector and adapter
US11830730B2 (en) 2017-08-29 2023-11-28 Asm Ip Holding B.V. Layer forming method and apparatus
US11295980B2 (en) 2017-08-30 2022-04-05 Asm Ip Holding B.V. Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures
US11056344B2 (en) 2017-08-30 2021-07-06 Asm Ip Holding B.V. Layer forming method
KR102491945B1 (ko) 2017-08-30 2023-01-26 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
US10607895B2 (en) 2017-09-18 2020-03-31 Asm Ip Holdings B.V. Method for forming a semiconductor device structure comprising a gate fill metal
KR102630301B1 (ko) 2017-09-21 2024-01-29 에이에스엠 아이피 홀딩 비.브이. 침투성 재료의 순차 침투 합성 방법 처리 및 이를 이용하여 형성된 구조물 및 장치
US10844484B2 (en) 2017-09-22 2020-11-24 Asm Ip Holding B.V. Apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods
US10658205B2 (en) 2017-09-28 2020-05-19 Asm Ip Holdings B.V. Chemical dispensing apparatus and methods for dispensing a chemical to a reaction chamber
US10403504B2 (en) 2017-10-05 2019-09-03 Asm Ip Holding B.V. Method for selectively depositing a metallic film on a substrate
US10319588B2 (en) 2017-10-10 2019-06-11 Asm Ip Holding B.V. Method for depositing a metal chalcogenide on a substrate by cyclical deposition
US10923344B2 (en) 2017-10-30 2021-02-16 Asm Ip Holding B.V. Methods for forming a semiconductor structure and related semiconductor structures
US10910262B2 (en) 2017-11-16 2021-02-02 Asm Ip Holding B.V. Method of selectively depositing a capping layer structure on a semiconductor device structure
KR102443047B1 (ko) 2017-11-16 2022-09-14 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치 방법 및 그에 의해 제조된 장치
US11022879B2 (en) 2017-11-24 2021-06-01 Asm Ip Holding B.V. Method of forming an enhanced unexposed photoresist layer
JP7206265B2 (ja) 2017-11-27 2023-01-17 エーエスエム アイピー ホールディング ビー．ブイ． クリーン・ミニエンバイロメントを備える装置
JP7214724B2 (ja) 2017-11-27 2023-01-30 エーエスエム アイピー ホールディング ビー．ブイ． バッチ炉で利用されるウェハカセットを収納するための収納装置
TWI761636B (zh) 2017-12-04 2022-04-21 荷蘭商Ａｓｍ Ｉｐ控股公司 電漿增強型原子層沉積製程及沉積碳氧化矽薄膜的方法
US10290508B1 (en) 2017-12-05 2019-05-14 Asm Ip Holding B.V. Method for forming vertical spacers for spacer-defined patterning
KR20190072266A (ko) * 2017-12-15 2019-06-25 삼성전자주식회사 소스 가스 공급 장치 및 이를 구비하는 증착 장치
US10872771B2 (en) 2018-01-16 2020-12-22 Asm Ip Holding B. V. Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structures
TW202325889A (zh) 2018-01-19 2023-07-01 荷蘭商Ａｓｍ 智慧財產控股公司 沈積方法
KR20200108016A (ko) 2018-01-19 2020-09-16 에이에스엠 아이피 홀딩 비.브이. 플라즈마 보조 증착에 의해 갭 충진 층을 증착하는 방법
USD903477S1 (en) 2018-01-24 2020-12-01 Asm Ip Holdings B.V. Metal clamp
US11018047B2 (en) 2018-01-25 2021-05-25 Asm Ip Holding B.V. Hybrid lift pin
USD880437S1 (en) 2018-02-01 2020-04-07 Asm Ip Holding B.V. Gas supply plate for semiconductor manufacturing apparatus
US10535516B2 (en) 2018-02-01 2020-01-14 Asm Ip Holdings B.V. Method for depositing a semiconductor structure on a surface of a substrate and related semiconductor structures
US11081345B2 (en) 2018-02-06 2021-08-03 Asm Ip Holding B.V. Method of post-deposition treatment for silicon oxide film
US10896820B2 (en) 2018-02-14 2021-01-19 Asm Ip Holding B.V. Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process
EP3737779A1 (en) 2018-02-14 2020-11-18 ASM IP Holding B.V. A method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process
US10731249B2 (en) 2018-02-15 2020-08-04 Asm Ip Holding B.V. Method of forming a transition metal containing film on a substrate by a cyclical deposition process, a method for supplying a transition metal halide compound to a reaction chamber, and related vapor deposition apparatus
US10658181B2 (en) 2018-02-20 2020-05-19 Asm Ip Holding B.V. Method of spacer-defined direct patterning in semiconductor fabrication
KR102636427B1 (ko) 2018-02-20 2024-02-13 에이에스엠 아이피 홀딩 비.브이. 기판 처리 방법 및 장치
US10975470B2 (en) 2018-02-23 2021-04-13 Asm Ip Holding B.V. Apparatus for detecting or monitoring for a chemical precursor in a high temperature environment
US11473195B2 (en) 2018-03-01 2022-10-18 Asm Ip Holding B.V. Semiconductor processing apparatus and a method for processing a substrate
US11629406B2 (en) 2018-03-09 2023-04-18 Asm Ip Holding B.V. Semiconductor processing apparatus comprising one or more pyrometers for measuring a temperature of a substrate during transfer of the substrate
US11114283B2 (en) 2018-03-16 2021-09-07 Asm Ip Holding B.V. Reactor, system including the reactor, and methods of manufacturing and using same
KR102646467B1 (ko) 2018-03-27 2024-03-11 에이에스엠 아이피 홀딩 비.브이. 기판 상에 전극을 형성하는 방법 및 전극을 포함하는 반도체 소자 구조
US11230766B2 (en) 2018-03-29 2022-01-25 Asm Ip Holding B.V. Substrate processing apparatus and method
US10510536B2 (en) 2018-03-29 2019-12-17 Asm Ip Holding B.V. Method of depositing a co-doped polysilicon film on a surface of a substrate within a reaction chamber
US11088002B2 (en) 2018-03-29 2021-08-10 Asm Ip Holding B.V. Substrate rack and a substrate processing system and method
KR102501472B1 (ko) 2018-03-30 2023-02-20 에이에스엠 아이피 홀딩 비.브이. 기판 처리 방법
TW202344708A (zh) 2018-05-08 2023-11-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 藉由循環沉積製程於基板上沉積氧化物膜之方法及相關裝置結構
TWI816783B (zh) 2018-05-11 2023-10-01 荷蘭商Ａｓｍ 智慧財產控股公司 用於基板上形成摻雜金屬碳化物薄膜之方法及相關半導體元件結構
KR102596988B1 (ko) 2018-05-28 2023-10-31 에이에스엠 아이피 홀딩 비.브이. 기판 처리 방법 및 그에 의해 제조된 장치
US11270899B2 (en) 2018-06-04 2022-03-08 Asm Ip Holding B.V. Wafer handling chamber with moisture reduction
US11718913B2 (en) 2018-06-04 2023-08-08 Asm Ip Holding B.V. Gas distribution system and reactor system including same
US11286562B2 (en) 2018-06-08 2022-03-29 Asm Ip Holding B.V. Gas-phase chemical reactor and method of using same
US10797133B2 (en) 2018-06-21 2020-10-06 Asm Ip Holding B.V. Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures
KR102568797B1 (ko) 2018-06-21 2023-08-21 에이에스엠 아이피 홀딩 비.브이. 기판 처리 시스템
TWI819010B (zh) 2018-06-27 2023-10-21 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於形成含金屬材料及包含含金屬材料的膜及結構之循環沉積方法
US11499222B2 (en) 2018-06-27 2022-11-15 Asm Ip Holding B.V. Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material
US10612136B2 (en) 2018-06-29 2020-04-07 ASM IP Holding, B.V. Temperature-controlled flange and reactor system including same
KR20200002519A (ko) 2018-06-29 2020-01-08 에이에스엠 아이피 홀딩 비.브이. 박막 증착 방법 및 반도체 장치의 제조 방법
US10755922B2 (en) 2018-07-03 2020-08-25 Asm Ip Holding B.V. Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
US10388513B1 (en) 2018-07-03 2019-08-20 Asm Ip Holding B.V. Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
US10767789B2 (en) 2018-07-16 2020-09-08 Asm Ip Holding B.V. Diaphragm valves, valve components, and methods for forming valve components
US10483099B1 (en) 2018-07-26 2019-11-19 Asm Ip Holding B.V. Method for forming thermally stable organosilicon polymer film
US11053591B2 (en) 2018-08-06 2021-07-06 Asm Ip Holding B.V. Multi-port gas injection system and reactor system including same
US10883175B2 (en) 2018-08-09 2021-01-05 Asm Ip Holding B.V. Vertical furnace for processing substrates and a liner for use therein
US10829852B2 (en) 2018-08-16 2020-11-10 Asm Ip Holding B.V. Gas distribution device for a wafer processing apparatus
US11430674B2 (en) 2018-08-22 2022-08-30 Asm Ip Holding B.V. Sensor array, apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods
US11024523B2 (en) 2018-09-11 2021-06-01 Asm Ip Holding B.V. Substrate processing apparatus and method
KR20200030162A (ko) 2018-09-11 2020-03-20 에이에스엠 아이피 홀딩 비.브이. 박막 증착 방법
US11049751B2 (en) 2018-09-14 2021-06-29 Asm Ip Holding B.V. Cassette supply system to store and handle cassettes and processing apparatus equipped therewith
CN110970344A (zh) 2018-10-01 2020-04-07 Asm Ip控股有限公司 衬底保持设备、包含所述设备的系统及其使用方法
US11232963B2 (en) 2018-10-03 2022-01-25 Asm Ip Holding B.V. Substrate processing apparatus and method
KR102592699B1 (ko) 2018-10-08 2023-10-23 에이에스엠 아이피 홀딩 비.브이. 기판 지지 유닛 및 이를 포함하는 박막 증착 장치와 기판 처리 장치
US10847365B2 (en) 2018-10-11 2020-11-24 Asm Ip Holding B.V. Method of forming conformal silicon carbide film by cyclic CVD
US10811256B2 (en) 2018-10-16 2020-10-20 Asm Ip Holding B.V. Method for etching a carbon-containing feature
KR102546322B1 (ko) 2018-10-19 2023-06-21 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치 및 기판 처리 방법
KR102605121B1 (ko) 2018-10-19 2023-11-23 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치 및 기판 처리 방법
USD948463S1 (en) 2018-10-24 2022-04-12 Asm Ip Holding B.V. Susceptor for semiconductor substrate supporting apparatus
US10381219B1 (en) 2018-10-25 2019-08-13 Asm Ip Holding B.V. Methods for forming a silicon nitride film
US11087997B2 (en) 2018-10-31 2021-08-10 Asm Ip Holding B.V. Substrate processing apparatus for processing substrates
KR20200051105A (ko) 2018-11-02 2020-05-13 에이에스엠 아이피 홀딩 비.브이. 기판 지지 유닛 및 이를 포함하는 기판 처리 장치
US11572620B2 (en) 2018-11-06 2023-02-07 Asm Ip Holding B.V. Methods for selectively depositing an amorphous silicon film on a substrate
US11031242B2 (en) 2018-11-07 2021-06-08 Asm Ip Holding B.V. Methods for depositing a boron doped silicon germanium film
US10847366B2 (en) 2018-11-16 2020-11-24 Asm Ip Holding B.V. Methods for depositing a transition metal chalcogenide film on a substrate by a cyclical deposition process
US10818758B2 (en) 2018-11-16 2020-10-27 Asm Ip Holding B.V. Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures
US10559458B1 (en) 2018-11-26 2020-02-11 Asm Ip Holding B.V. Method of forming oxynitride film
US11217444B2 (en) 2018-11-30 2022-01-04 Asm Ip Holding B.V. Method for forming an ultraviolet radiation responsive metal oxide-containing film
KR102636428B1 (ko) 2018-12-04 2024-02-13 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치를 세정하는 방법
US11158513B2 (en) 2018-12-13 2021-10-26 Asm Ip Holding B.V. Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures
JP2020096183A (ja) 2018-12-14 2020-06-18 エーエスエム・アイピー・ホールディング・ベー・フェー 窒化ガリウムの選択的堆積を用いてデバイス構造体を形成する方法及びそのためのシステム
TWI819180B (zh) 2019-01-17 2023-10-21 荷蘭商Ａｓｍ 智慧財產控股公司 藉由循環沈積製程於基板上形成含過渡金屬膜之方法
KR20200091543A (ko) 2019-01-22 2020-07-31 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
CN111524788B (zh) 2019-02-01 2023-11-24 Asm Ip私人控股有限公司 氧化硅的拓扑选择性膜形成的方法
JP2020136677A (ja) 2019-02-20 2020-08-31 エーエスエム・アイピー・ホールディング・ベー・フェー 基材表面内に形成された凹部を充填するための周期的堆積方法および装置
JP2020136678A (ja) 2019-02-20 2020-08-31 エーエスエム・アイピー・ホールディング・ベー・フェー 基材表面内に形成された凹部を充填するための方法および装置
KR20200102357A (ko) 2019-02-20 2020-08-31 에이에스엠 아이피 홀딩 비.브이. 3-d nand 응용의 플러그 충진체 증착용 장치 및 방법
KR102626263B1 (ko) 2019-02-20 2024-01-16 에이에스엠 아이피 홀딩 비.브이. 처리 단계를 포함하는 주기적 증착 방법 및 이를 위한 장치
TW202100794A (zh) 2019-02-22 2021-01-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 基材處理設備及處理基材之方法
KR20200108242A (ko) 2019-03-08 2020-09-17 에이에스엠 아이피 홀딩 비.브이. 실리콘 질화물 층을 선택적으로 증착하는 방법, 및 선택적으로 증착된 실리콘 질화물 층을 포함하는 구조체
KR20200108243A (ko) 2019-03-08 2020-09-17 에이에스엠 아이피 홀딩 비.브이. SiOC 층을 포함한 구조체 및 이의 형성 방법
KR20200108248A (ko) 2019-03-08 2020-09-17 에이에스엠 아이피 홀딩 비.브이. SiOCN 층을 포함한 구조체 및 이의 형성 방법
KR20200116033A (ko) 2019-03-28 2020-10-08 에이에스엠 아이피 홀딩 비.브이. 도어 개방기 및 이를 구비한 기판 처리 장치
KR20200116855A (ko) 2019-04-01 2020-10-13 에이에스엠 아이피 홀딩 비.브이. 반도체 소자를 제조하는 방법
US11447864B2 (en) 2019-04-19 2022-09-20 Asm Ip Holding B.V. Layer forming method and apparatus
KR20200125453A (ko) 2019-04-24 2020-11-04 에이에스엠 아이피 홀딩 비.브이. 기상 반응기 시스템 및 이를 사용하는 방법
KR20200130118A (ko) 2019-05-07 2020-11-18 에이에스엠 아이피 홀딩 비.브이. 비정질 탄소 중합체 막을 개질하는 방법
KR20200130121A (ko) 2019-05-07 2020-11-18 에이에스엠 아이피 홀딩 비.브이. 딥 튜브가 있는 화학물질 공급원 용기
KR20200130652A (ko) 2019-05-10 2020-11-19 에이에스엠 아이피 홀딩 비.브이. 표면 상에 재료를 증착하는 방법 및 본 방법에 따라 형성된 구조
JP2020188255A (ja) 2019-05-16 2020-11-19 エーエスエム アイピー ホールディング ビー．ブイ． ウェハボートハンドリング装置、縦型バッチ炉および方法
USD975665S1 (en) 2019-05-17 2023-01-17 Asm Ip Holding B.V. Susceptor shaft
USD947913S1 (en) 2019-05-17 2022-04-05 Asm Ip Holding B.V. Susceptor shaft
USD935572S1 (en) 2019-05-24 2021-11-09 Asm Ip Holding B.V. Gas channel plate
USD922229S1 (en) 2019-06-05 2021-06-15 Asm Ip Holding B.V. Device for controlling a temperature of a gas supply unit
KR20200141003A (ko) 2019-06-06 2020-12-17 에이에스엠 아이피 홀딩 비.브이. 가스 감지기를 포함하는 기상 반응기 시스템
KR20200143254A (ko) 2019-06-11 2020-12-23 에이에스엠 아이피 홀딩 비.브이. 개질 가스를 사용하여 전자 구조를 형성하는 방법, 상기 방법을 수행하기 위한 시스템, 및 상기 방법을 사용하여 형성되는 구조
USD944946S1 (en) 2019-06-14 2022-03-01 Asm Ip Holding B.V. Shower plate
USD931978S1 (en) 2019-06-27 2021-09-28 Asm Ip Holding B.V. Showerhead vacuum transport
KR20210005515A (ko) 2019-07-03 2021-01-14 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치용 온도 제어 조립체 및 이를 사용하는 방법
JP2021015791A (ja) 2019-07-09 2021-02-12 エーエスエム アイピー ホールディング ビー．ブイ． 同軸導波管を用いたプラズマ装置、基板処理方法
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KR20210010820A (ko) 2019-07-17 2021-01-28 에이에스엠 아이피 홀딩 비.브이. 실리콘 게르마늄 구조를 형성하는 방법
KR20210010816A (ko) 2019-07-17 2021-01-28 에이에스엠 아이피 홀딩 비.브이. 라디칼 보조 점화 플라즈마 시스템 및 방법
US11643724B2 (en) 2019-07-18 2023-05-09 Asm Ip Holding B.V. Method of forming structures using a neutral beam
JP2021019198A (ja) 2019-07-19 2021-02-15 エーエスエム・アイピー・ホールディング・ベー・フェー トポロジー制御されたアモルファスカーボンポリマー膜の形成方法
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US11227782B2 (en) 2019-07-31 2022-01-18 Asm Ip Holding B.V. Vertical batch furnace assembly
US11587814B2 (en) 2019-07-31 2023-02-21 Asm Ip Holding B.V. Vertical batch furnace assembly
US11587815B2 (en) 2019-07-31 2023-02-21 Asm Ip Holding B.V. Vertical batch furnace assembly
KR20210018759A (ko) 2019-08-05 2021-02-18 에이에스엠 아이피 홀딩 비.브이. 화학물질 공급원 용기를 위한 액체 레벨 센서
USD965524S1 (en) 2019-08-19 2022-10-04 Asm Ip Holding B.V. Susceptor support
USD965044S1 (en) 2019-08-19 2022-09-27 Asm Ip Holding B.V. Susceptor shaft
JP2021031769A (ja) 2019-08-21 2021-03-01 エーエスエム アイピー ホールディング ビー．ブイ． 成膜原料混合ガス生成装置及び成膜装置
USD949319S1 (en) 2019-08-22 2022-04-19 Asm Ip Holding B.V. Exhaust duct
USD940837S1 (en) 2019-08-22 2022-01-11 Asm Ip Holding B.V. Electrode
USD930782S1 (en) 2019-08-22 2021-09-14 Asm Ip Holding B.V. Gas distributor
KR20210024423A (ko) 2019-08-22 2021-03-05 에이에스엠 아이피 홀딩 비.브이. 홀을 구비한 구조체를 형성하기 위한 방법
USD979506S1 (en) 2019-08-22 2023-02-28 Asm Ip Holding B.V. Insulator
KR20210024420A (ko) 2019-08-23 2021-03-05 에이에스엠 아이피 홀딩 비.브이. 비스(디에틸아미노)실란을 사용하여 peald에 의해 개선된 품질을 갖는 실리콘 산화물 막을 증착하기 위한 방법
US11286558B2 (en) 2019-08-23 2022-03-29 Asm Ip Holding B.V. Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film
KR20210029090A (ko) 2019-09-04 2021-03-15 에이에스엠 아이피 홀딩 비.브이. 희생 캡핑 층을 이용한 선택적 증착 방법
KR20210029663A (ko) 2019-09-05 2021-03-16 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
US11562901B2 (en) 2019-09-25 2023-01-24 Asm Ip Holding B.V. Substrate processing method
CN112593212B (zh) 2019-10-02 2023-12-22 Asm Ip私人控股有限公司 通过循环等离子体增强沉积工艺形成拓扑选择性氧化硅膜的方法
TW202129060A (zh) 2019-10-08 2021-08-01 荷蘭商Ａｓｍ Ｉｐ控股公司 基板處理裝置、及基板處理方法
KR20210043460A (ko) 2019-10-10 2021-04-21 에이에스엠 아이피 홀딩 비.브이. 포토레지스트 하부층을 형성하기 위한 방법 및 이를 포함한 구조체
KR20210045930A (ko) 2019-10-16 2021-04-27 에이에스엠 아이피 홀딩 비.브이. 실리콘 산화물의 토폴로지-선택적 막의 형성 방법
US11637014B2 (en) 2019-10-17 2023-04-25 Asm Ip Holding B.V. Methods for selective deposition of doped semiconductor material
KR20210047808A (ko) 2019-10-21 2021-04-30 에이에스엠 아이피 홀딩 비.브이. 막을 선택적으로 에칭하기 위한 장치 및 방법
US11646205B2 (en) 2019-10-29 2023-05-09 Asm Ip Holding B.V. Methods of selectively forming n-type doped material on a surface, systems for selectively forming n-type doped material, and structures formed using same
KR20210054983A (ko) 2019-11-05 2021-05-14 에이에스엠 아이피 홀딩 비.브이. 도핑된 반도체 층을 갖는 구조체 및 이를 형성하기 위한 방법 및 시스템
WO2021097143A2 (en) 2019-11-12 2021-05-20 Forge Nano Inc. Coatings on particles of high energy materials and methods of forming same
US11501968B2 (en) 2019-11-15 2022-11-15 Asm Ip Holding B.V. Method for providing a semiconductor device with silicon filled gaps
KR20210062561A (ko) 2019-11-20 2021-05-31 에이에스엠 아이피 홀딩 비.브이. 기판의 표면 상에 탄소 함유 물질을 증착하는 방법, 상기 방법을 사용하여 형성된 구조물, 및 상기 구조물을 형성하기 위한 시스템
KR20210065848A (ko) 2019-11-26 2021-06-04 에이에스엠 아이피 홀딩 비.브이. 제1 유전체 표면과 제2 금속성 표면을 포함한 기판 상에 타겟 막을 선택적으로 형성하기 위한 방법
CN112951697A (zh) 2019-11-26 2021-06-11 Asm Ip私人控股有限公司 基板处理设备
CN112885692A (zh) 2019-11-29 2021-06-01 Asm Ip私人控股有限公司 基板处理设备
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JP2021090042A (ja) 2019-12-02 2021-06-10 エーエスエム アイピー ホールディング ビー．ブイ． 基板処理装置、基板処理方法
KR20210070898A (ko) 2019-12-04 2021-06-15 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
CN112992667A (zh) 2019-12-17 2021-06-18 Asm Ip私人控股有限公司 形成氮化钒层的方法和包括氮化钒层的结构
US11527403B2 (en) 2019-12-19 2022-12-13 Asm Ip Holding B.V. Methods for filling a gap feature on a substrate surface and related semiconductor structures
KR20210095050A (ko) 2020-01-20 2021-07-30 에이에스엠 아이피 홀딩 비.브이. 박막 형성 방법 및 박막 표면 개질 방법
TW202130846A (zh) 2020-02-03 2021-08-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 形成包括釩或銦層的結構之方法
KR20210100010A (ko) 2020-02-04 2021-08-13 에이에스엠 아이피 홀딩 비.브이. 대형 물품의 투과율 측정을 위한 방법 및 장치
US11776846B2 (en) 2020-02-07 2023-10-03 Asm Ip Holding B.V. Methods for depositing gap filling fluids and related systems and devices
US11781243B2 (en) 2020-02-17 2023-10-10 Asm Ip Holding B.V. Method for depositing low temperature phosphorous-doped silicon
US11876356B2 (en) 2020-03-11 2024-01-16 Asm Ip Holding B.V. Lockout tagout assembly and system and method of using same
KR20210116240A (ko) 2020-03-11 2021-09-27 에이에스엠 아이피 홀딩 비.브이. 조절성 접합부를 갖는 기판 핸들링 장치
CN113394086A (zh) 2020-03-12 2021-09-14 Asm Ip私人控股有限公司 用于制造具有目标拓扑轮廓的层结构的方法
KR20210124042A (ko) 2020-04-02 2021-10-14 에이에스엠 아이피 홀딩 비.브이. 박막 형성 방법
TW202146689A (zh) 2020-04-03 2021-12-16 荷蘭商Ａｓｍ Ｉｐ控股公司 阻障層形成方法及半導體裝置的製造方法
TW202145344A (zh) 2020-04-08 2021-12-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於選擇性蝕刻氧化矽膜之設備及方法
US11821078B2 (en) 2020-04-15 2023-11-21 Asm Ip Holding B.V. Method for forming precoat film and method for forming silicon-containing film
US11898243B2 (en) 2020-04-24 2024-02-13 Asm Ip Holding B.V. Method of forming vanadium nitride-containing layer
KR20210132600A (ko) 2020-04-24 2021-11-04 에이에스엠 아이피 홀딩 비.브이. 바나듐, 질소 및 추가 원소를 포함한 층을 증착하기 위한 방법 및 시스템
KR20210132605A (ko) 2020-04-24 2021-11-04 에이에스엠 아이피 홀딩 비.브이. 냉각 가스 공급부를 포함한 수직형 배치 퍼니스 어셈블리
KR20210134226A (ko) 2020-04-29 2021-11-09 에이에스엠 아이피 홀딩 비.브이. 고체 소스 전구체 용기
KR20210134869A (ko) 2020-05-01 2021-11-11 에이에스엠 아이피 홀딩 비.브이. Foup 핸들러를 이용한 foup의 빠른 교환
KR20210141379A (ko) 2020-05-13 2021-11-23 에이에스엠 아이피 홀딩 비.브이. 반응기 시스템용 레이저 정렬 고정구
KR20210143653A (ko) 2020-05-19 2021-11-29 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
KR20210145078A (ko) 2020-05-21 2021-12-01 에이에스엠 아이피 홀딩 비.브이. 다수의 탄소 층을 포함한 구조체 및 이를 형성하고 사용하는 방법
TW202201602A (zh) 2020-05-29 2022-01-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 基板處理方法
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TW202217953A (zh) 2020-06-30 2022-05-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 基板處理方法
KR20220010438A (ko) 2020-07-17 2022-01-25 에이에스엠 아이피 홀딩 비.브이. 포토리소그래피에 사용하기 위한 구조체 및 방법
TW202204662A (zh) 2020-07-20 2022-02-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於沉積鉬層之方法及系統
TW202212623A (zh) 2020-08-26 2022-04-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 形成金屬氧化矽層及金屬氮氧化矽層的方法、半導體結構、及系統
USD990534S1 (en) 2020-09-11 2023-06-27 Asm Ip Holding B.V. Weighted lift pin
USD1012873S1 (en) 2020-09-24 2024-01-30 Asm Ip Holding B.V. Electrode for semiconductor processing apparatus
TW202229613A (zh) 2020-10-14 2022-08-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 於階梯式結構上沉積材料的方法
TW202217037A (zh) 2020-10-22 2022-05-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 沉積釩金屬的方法、結構、裝置及沉積總成
TW202223136A (zh) 2020-10-28 2022-06-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於在基板上形成層之方法、及半導體處理系統
FR3116837B1 (fr) 2020-11-30 2023-03-10 Centre Nat Rech Scient Catalyseur, électrode, et leurs méthodes de fabrication
KR20220076343A (ko) 2020-11-30 2022-06-08 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치의 반응 챔버 내에 배열되도록 구성된 인젝터
CN114639631A (zh) 2020-12-16 2022-06-17 Asm Ip私人控股有限公司 跳动和摆动测量固定装置
TW202231903A (zh) * 2020-12-22 2022-08-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 過渡金屬沉積方法、過渡金屬層、用於沉積過渡金屬於基板上的沉積總成
USD980813S1 (en) 2021-05-11 2023-03-14 Asm Ip Holding B.V. Gas flow control plate for substrate processing apparatus
USD980814S1 (en) 2021-05-11 2023-03-14 Asm Ip Holding B.V. Gas distributor for substrate processing apparatus
USD981973S1 (en) 2021-05-11 2023-03-28 Asm Ip Holding B.V. Reactor wall for substrate processing apparatus
USD1023959S1 (en) 2021-05-11 2024-04-23 Asm Ip Holding B.V. Electrode for substrate processing apparatus
DE102021206168A1 (de) 2021-06-16 2022-12-22 Carl Zeiss Smt Gmbh Verfahren zum Abscheiden einer Deckschicht, reflektives optisches Element für den EUV-Wellenlängenbereich und EUV-Lithographiesystem
DE102021121240A1 (de) 2021-08-16 2023-02-16 Vishay Electronic Gmbh Elektrisches Widerstandsbauelement
USD990441S1 (en) 2021-09-07 2023-06-27 Asm Ip Holding B.V. Gas flow control plate
DE102021214362A1 (de) 2021-12-15 2023-06-15 Carl Zeiss Smt Gmbh Verfahren zur Herstellung einer Schutzabdeckung und EUV-Lithographiesystem

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1051401A (nl) *
NL224894A (nl) * 1957-06-08
FR1227508A (fr) * 1959-04-17 1960-08-22 Shockley Transistor Corp Transistor à jonctions
AT247915B (de) * 1962-08-27 1966-07-11 Siemens Ag Verfahren zum Herstellen kristalliner Schichten aus hochreinem spröden Material
US3316386A (en) * 1964-05-20 1967-04-25 Bendix Corp Multiple evaporation rate monitor and control
US3392051A (en) * 1964-06-08 1968-07-09 Ibm Method for forming thin film electrical circuit elements by preferential nucleation techniques
FR1465435A (fr) * 1965-08-27 1967-01-13 Procédé de fabrication de composants électroniques à couches minces et de circuits intégrés par vaporisation au moyen de laser et appareil correspondant
DE1519892A1 (de) * 1966-06-02 1969-02-20 Siemens Ag Verfahren zum Herstellen von hochreinen kristallinen,insbesondere einkristallinen Materialien
US3493430A (en) * 1967-10-02 1970-02-03 North American Rockwell Single crystal molybdenum on insulating substrates
US3556837A (en) * 1967-11-22 1971-01-19 Gulf Energy & Environ Systems Composite and method of making same
US3608519A (en) * 1968-12-31 1971-09-28 Texas Instruments Inc Deposition reactor
US3576670A (en) * 1969-02-19 1971-04-27 Gulf Energy & Environ Systems Method for making a superconducting material
DE1917406A1 (de) * 1969-04-03 1970-10-15 Isofilm International Chatswor Verfahren und Geraet zur Materialbedampfung
US3623712A (en) * 1969-10-15 1971-11-30 Applied Materials Tech Epitaxial radiation heated reactor and process
DE1963207C3 (de) * 1969-12-17 1973-10-25 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Vorrichtung zum epitaktischen Ab scheiden von Halbleitermaterial auf einem Substrat
JPS4942351B1 (nl) * 1970-08-12 1974-11-14
DE2166427C3 (de) * 1970-12-31 1978-08-24 Western Electric Co. Inc., New York, N.Y. (V.St.A.) Verfahren zum epitaktischen Aufwachsen einer dotierten GaAs-Dünnschicht
JPS513632B2 (nl) * 1971-10-26 1976-02-04
US3862859A (en) * 1972-01-10 1975-01-28 Rca Corp Method of making a semiconductor device
US3839084A (en) * 1972-11-29 1974-10-01 Bell Telephone Labor Inc Molecular beam epitaxy method for fabricating magnesium doped thin films of group iii(a)-v(a) compounds
DE2314672A1 (de) * 1973-03-23 1974-10-03 Siemens Ag Verfahren zum heteroepitaktischen aufwachsen von iii-v-verbindungs-halbleitermaterial

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