FR2245403A1 - Epitaxial deposition from the liquid phase - on a series of semiconductor substrates - Google Patents

Epitaxial deposition from the liquid phase - on a series of semiconductor substrates

Info

Publication number
FR2245403A1
FR2245403A1 FR7334695A FR7334695A FR2245403A1 FR 2245403 A1 FR2245403 A1 FR 2245403A1 FR 7334695 A FR7334695 A FR 7334695A FR 7334695 A FR7334695 A FR 7334695A FR 2245403 A1 FR2245403 A1 FR 2245403A1
Authority
FR
France
Prior art keywords
substrate
phase
epitaxial deposition
liquid phase
liq
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7334695A
Other languages
French (fr)
Other versions
FR2245403B1 (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Radiotechnique Compelec RTC SA
Original Assignee
Radiotechnique Compelec RTC SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Radiotechnique Compelec RTC SA filed Critical Radiotechnique Compelec RTC SA
Priority to FR7334695A priority Critical patent/FR2245403A1/en
Publication of FR2245403A1 publication Critical patent/FR2245403A1/en
Application granted granted Critical
Publication of FR2245403B1 publication Critical patent/FR2245403B1/fr
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
    • C30B19/063—Sliding boat system

Abstract

Epitaxial deposition on a semiconductor substrate of a semiconductor layer from a material in the liq. phase, partic. for the industrial prodn. of Ga-As epitaxial layers on a GaAs substrate, by the known technique in which the substrate is placed in a crucible situated in an enclosure subjected to thermal radiation from a furnace and is divided into at least two chambers by a mobile partition by displacement of which the substrate can be brought into contact with the liquid phase material, (a) the substrate is placed in a recess in a mobile situated below the mobile partition and can be withdrawn from the crucible, (b) the substrate is brought into contact with the whole of the material in the liquid phase and after completion of the epitaxial deposition, the excess liq. phase is isolated from the substrate by displacement of the mobile partition, the substrate then being withdrawn from the crucible by displacement of the mobile support, leaving the excess liq. phase material for a subsequent epitaxial deposition. Possible contamination of the liq. phase and the complicated manipulations are avoided.
FR7334695A 1973-09-27 1973-09-27 Epitaxial deposition from the liquid phase - on a series of semiconductor substrates Granted FR2245403A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR7334695A FR2245403A1 (en) 1973-09-27 1973-09-27 Epitaxial deposition from the liquid phase - on a series of semiconductor substrates

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7334695A FR2245403A1 (en) 1973-09-27 1973-09-27 Epitaxial deposition from the liquid phase - on a series of semiconductor substrates

Publications (2)

Publication Number Publication Date
FR2245403A1 true FR2245403A1 (en) 1975-04-25
FR2245403B1 FR2245403B1 (en) 1977-05-27

Family

ID=9125651

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7334695A Granted FR2245403A1 (en) 1973-09-27 1973-09-27 Epitaxial deposition from the liquid phase - on a series of semiconductor substrates

Country Status (1)

Country Link
FR (1) FR2245403A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004012257A1 (en) * 2002-07-31 2004-02-05 Astropower, Inc. Method and apparatus for manufacturing net shape semiconductor wafers

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004012257A1 (en) * 2002-07-31 2004-02-05 Astropower, Inc. Method and apparatus for manufacturing net shape semiconductor wafers
US7456084B2 (en) 2002-07-31 2008-11-25 Heritage Power Llc Method of using a setter having a recess in manufacturing a net-shape semiconductor wafer

Also Published As

Publication number Publication date
FR2245403B1 (en) 1977-05-27

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Legal Events

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