GB1423594A - Manufacture of semiconductor single crystals - Google Patents

Abstract

1423594 Epitaxial growth NIPPON ELECTRIC CO Ltd 23 March 1973 [24 March 1972 8 May 1972] 14148/73 Heading BIS Epitaxial layers are grown on single crystal substrates by liquid phases epitaxy in apparatus comprising a substrate holder for holding a number of single crystal seed substrates at angularly spaced locations about an axis of rotation and for accommodating a growth solution beside the substrates, means for rotating the substrate holder in order to cause the growth solution to move under the influence of centrifugal forces exerted by rotation of the holder and thus to come into contact with the surfaces of the substrates, a reaction vessel for isolating the substrates and the growth solution from the external atmosphere and means for heating the substrates to a predetermined temperature. Various configuration for the holder for the substrates and the growth solution are described and as an example in Fig. I a number of GaP semiconductor substrates 1 are placed in a recess on the inner wall of a carbon receptacle 4 so that the substrates are arranged in a circle about a rotating shaft 5. A reaction vessel 8 encloses the reaction system which is heated by heaters 9, 10 and 12. The growth solution 6 is placed near the centre of the receptacle 4 and contains excess by a GaP crystals 7. When the temperature of the substrates 1 and the growth solution 6 reach the required value the rotational speed of the receptacle is increased bringing the growth solution 6 into contact with the substrates 1. Reduction thereafter of the rotational speed removes the residual growth solution from the substrates and subsequently if required from the reaction vessel 8 by way of valve 15. Further growth solution can be added via opening 13.