FR2252871A1 - Epitaxial deposition from a liq. - on a series of monocrystalline substrates e.g. gallium phosphide - Google Patents

Epitaxial deposition from a liq. - on a series of monocrystalline substrates e.g. gallium phosphide

Info

Publication number
FR2252871A1
FR2252871A1 FR7342526A FR7342526A FR2252871A1 FR 2252871 A1 FR2252871 A1 FR 2252871A1 FR 7342526 A FR7342526 A FR 7342526A FR 7342526 A FR7342526 A FR 7342526A FR 2252871 A1 FR2252871 A1 FR 2252871A1
Authority
FR
France
Prior art keywords
liq
substrates
epitaxial deposition
series
gallium phosphide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
FR7342526A
Other languages
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Radiotechnique Compelec RTC SA
Original Assignee
Radiotechnique Compelec RTC SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Radiotechnique Compelec RTC SA filed Critical Radiotechnique Compelec RTC SA
Priority to FR7342526A priority Critical patent/FR2252871A1/en
Publication of FR2252871A1 publication Critical patent/FR2252871A1/en
Withdrawn legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
    • C30B19/066—Injection or centrifugal force system

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

High temp. epitaxial deposition on semiconductor substrates starting from a material in the liq. phase, by arranging the substrates in an enclosure subjected to thermal radiation from a furnace, injecting the liq. phase material previously placed in a reservoir into the enclosure via an interconnecting channel and after filling the enclosure, proceeding to the conventional operations of epitaxy and cooling. Enables a large number of substrates to be treated simultaneously in an appts. in which there is no relative motion between the reservoir and the substrate and which is well adapted for industrial use.
FR7342526A 1973-11-29 1973-11-29 Epitaxial deposition from a liq. - on a series of monocrystalline substrates e.g. gallium phosphide Withdrawn FR2252871A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR7342526A FR2252871A1 (en) 1973-11-29 1973-11-29 Epitaxial deposition from a liq. - on a series of monocrystalline substrates e.g. gallium phosphide

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7342526A FR2252871A1 (en) 1973-11-29 1973-11-29 Epitaxial deposition from a liq. - on a series of monocrystalline substrates e.g. gallium phosphide

Publications (1)

Publication Number Publication Date
FR2252871A1 true FR2252871A1 (en) 1975-06-27

Family

ID=9128445

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7342526A Withdrawn FR2252871A1 (en) 1973-11-29 1973-11-29 Epitaxial deposition from a liq. - on a series of monocrystalline substrates e.g. gallium phosphide

Country Status (1)

Country Link
FR (1) FR2252871A1 (en)

Similar Documents

Publication Publication Date Title
IL40925A0 (en) Semiconductor epitaxial growth from solution
GB1414254A (en) Epitaxial growth of semiconductor material from the liquid phase
FR2252871A1 (en) Epitaxial deposition from a liq. - on a series of monocrystalline substrates e.g. gallium phosphide
ES389761A1 (en) Liquid solution method of epitaxially depositing a semiconductor compound
GB1123890A (en) Method for manufacturing electroluminescent gallium phosphide diodes
JPS51111476A (en) Method of liquid phase epitaxial crystal growth
GB1468106A (en) Method and apparatus for crystal growth
JPS5236468A (en) Shallow diffusion method
JPS53139970A (en) Liquid phase epitaxial growth method of gaas crystal
JPS51121257A (en) Liquid phase epitaxial growth method for compound semiconductor crysta ls
JPS5344170A (en) Production of semiconductor device
JPS5252899A (en) Apparatus for liquid phase epitaxial crystal growth
JPS5262698A (en) Working method of garnet crystal
JPS524782A (en) Liquid phase epitaxial growth method
JPS5249766A (en) Apparatus for producing semiconductor crystal
FR2137160A1 (en) Monocrystalline semiconductor substrate prodn - with low specific resistance
JPS5649519A (en) Vapor growth of compound semiconductor
JPS5232688A (en) Manufacturing process of semiconductor device
FR2150756A1 (en) Epitaxial growth furnace - with push plate for liquid phase and cover plates
JPS52103952A (en) Liquid phase epitaxial crowth method of semiconductor crystal
JPS5252366A (en) Improvement of crystallinity of semiconductor crystals
JPS5326663A (en) Manu facture of semiconductor device
JPS5264271A (en) Semiconductor producing device
GB1037909A (en) Improvements relating to methods of growing semiconductor substances
JPS5232669A (en) Liquid-phase epitaxial growth method

Legal Events

Date Code Title Description
ST Notification of lapse