GB1210537A - Methods of and apparatus for supporting articles for treatment - Google Patents

Methods of and apparatus for supporting articles for treatment

Info

Publication number
GB1210537A
GB1210537A GB52825/67A GB5282567A GB1210537A GB 1210537 A GB1210537 A GB 1210537A GB 52825/67 A GB52825/67 A GB 52825/67A GB 5282567 A GB5282567 A GB 5282567A GB 1210537 A GB1210537 A GB 1210537A
Authority
GB
United Kingdom
Prior art keywords
drum
articles
axis
vapour
container
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB52825/67A
Inventor
Thomas Francis Briody
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of GB1210537A publication Critical patent/GB1210537A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/12—Substrate holders or susceptors
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4587—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially vertically
    • C23C16/4588—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially vertically the substrate being rotated
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68771—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting more than one semiconductor substrate

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

1,210,537. Deposition of silicon. WESTERN ELECTRIC CO. Inc. 21 Nov., 1967 [15 Dec., 1966], No. 52825/67. Heading C1A. [Also in Division H5] A plurality of articles 10 are treated at a given temperature by supporting them around the inside of a hollow rotatable drum shaped member 16, rotating this drum about its axis so that the articles are forced into close contact with the wall by centrifugal force and then heating the drum so that the articles are heated to the given temperature by conduction of heat from the drum wall. Preferably the rotation axis is vertical, and the articles, which may be wafers, are supported in pockets 17 recessed in the drum wall which pockets may be shaped so that a flat surface of each article e.g. wafer 10 abuts a flat surface 18 on the drum-shaped member, and the exposed surface of the waferisinclined at an angle of less that 15 degrees e.g. 3 degrees to the axis of rotation. A coating material may be deposited on the exposed surfaces of the heated articles from a vapour within the drum which vapour may be introduced via line 28 along the rotation axis of the drum. It is preferred that the wafers are of semi-conductor material e.g. Si, and the vapour is a heat decomposable compound of this semi-conductor material e.g. silicon tetrachloride in a carrier gas of hydrogen. The drum may be heated inductively e.g. by coil 41, and may be surrounded by a container 13 which may be evacuable e.g. by pump 31. The container is preferably surrounded by a fluid cooled Faraday shield 42 which prevents stray electrostatic interference and acts as a heat shield. The shield 42, the coil 41 and container 13 may be raised as a unit on guides 44 to load and unload the drum. The drum is preferably made of graphite and may comprise individual ring shaped sections 15 which when superimposed on each other via spacers 21 form a drum rotatable as a single unit by base-plate 14. The base-plate is driven through flange 24 on axis 26 which rotates in bearing 27, being driven from motor 38 via magnetic clutch 39 and gears 34, 36. The reactant gases are supplied via inlet 29.
GB52825/67A 1966-12-15 1967-11-21 Methods of and apparatus for supporting articles for treatment Expired GB1210537A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US60188566A 1966-12-15 1966-12-15

Publications (1)

Publication Number Publication Date
GB1210537A true GB1210537A (en) 1970-10-28

Family

ID=24409132

Family Applications (1)

Application Number Title Priority Date Filing Date
GB52825/67A Expired GB1210537A (en) 1966-12-15 1967-11-21 Methods of and apparatus for supporting articles for treatment

Country Status (9)

Country Link
US (1) US3659552A (en)
BE (1) BE707980A (en)
DE (1) DE1621394A1 (en)
ES (1) ES348706A1 (en)
FR (1) FR1561186A (en)
GB (1) GB1210537A (en)
IL (1) IL29056A (en)
NL (1) NL6717117A (en)
SE (1) SE323353B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2135559A (en) * 1983-02-14 1984-08-30 Electricity Council Induction heaters

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4047496A (en) * 1974-05-31 1977-09-13 Applied Materials, Inc. Epitaxial radiation heated reactor
US4018184A (en) * 1975-07-28 1977-04-19 Mitsubishi Denki Kabushiki Kaisha Apparatus for treatment of semiconductor wafer
DE2943634C2 (en) * 1979-10-29 1983-09-29 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Epitaxial reactor
JPS60116778A (en) * 1983-11-23 1985-06-24 ジエミニ　リサーチ，インコーポレイテツド Chemical deposition and device
DE3485898D1 (en) * 1983-12-09 1992-10-01 Applied Materials Inc INDUCTIONALLY HEATED REACTOR FOR CHEMICAL DEPOSITION FROM THE STEAM PHASE.
FR2573325B1 (en) * 1984-11-16 1993-08-20 Sony Corp APPARATUS AND METHOD FOR MAKING VAPOR DEPOSITS ON WAFERS
US4653428A (en) * 1985-05-10 1987-03-31 General Electric Company Selective chemical vapor deposition apparatus
US4672210A (en) * 1985-09-03 1987-06-09 Eaton Corporation Ion implanter target chamber
US4838983A (en) * 1986-07-03 1989-06-13 Emcore, Inc. Gas treatment apparatus and method
US4772356A (en) * 1986-07-03 1988-09-20 Emcore, Inc. Gas treatment apparatus and method
US5438181A (en) * 1993-12-14 1995-08-01 Essex Specialty Products, Inc. Apparatus for heating substrate having electrically-conductive and non-electrically-conductive portions
US6217662B1 (en) * 1997-03-24 2001-04-17 Cree, Inc. Susceptor designs for silicon carbide thin films
IL125690A0 (en) * 1998-08-06 1999-04-11 Reiser Raphael Joshua Furnace for processing semiconductor wafers
DE10019070A1 (en) * 2000-04-18 2001-10-25 Moeller Gmbh Device for de-gassing and soldering pre-mounted vacuum switch tubes has base plate with solder point(s), opening for connecting suction pump, bell, stimulation coil, generator and susceptor
US8540818B2 (en) * 2009-04-28 2013-09-24 Mitsubishi Materials Corporation Polycrystalline silicon reactor
WO2013083196A1 (en) * 2011-12-08 2013-06-13 Applied Materials, Inc. Substrate holder for full area processing, carrier and method of processing substrates
US8807550B2 (en) * 2011-12-13 2014-08-19 Intermolecular, Inc. Method and apparatus for controlling force between reactor and substrate
US9076674B2 (en) * 2012-09-25 2015-07-07 Intermolecular, Inc. Method and apparatus for improving particle performance

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL111901C (en) * 1950-09-12 1900-01-01
US2767682A (en) * 1951-03-22 1956-10-23 Syntron Co Vaporizing apparatus for producing selenium rectifiers
US2828225A (en) * 1954-03-01 1958-03-25 Sintercast Corp America Methods of infiltrating high melting skeleton bodies
US2906236A (en) * 1954-05-11 1959-09-29 Syntron Co Revolving cylindrical frame for selenium depositors
US2885997A (en) * 1956-02-06 1959-05-12 Heraeus Gmbh W C Vacuum coating
US3019129A (en) * 1959-08-10 1962-01-30 Nat Res Corp Apparatus and process for coating
US3131098A (en) * 1960-10-26 1964-04-28 Merck & Co Inc Epitaxial deposition on a substrate placed in a socket of the carrier member
NL276676A (en) * 1961-04-13
US3301213A (en) * 1962-10-23 1967-01-31 Ibm Epitaxial reactor apparatus
US3329524A (en) * 1963-06-12 1967-07-04 Temescal Metallurgical Corp Centrifugal-type vapor source
US3424629A (en) * 1965-12-13 1969-01-28 Ibm High capacity epitaxial apparatus and method
US3408982A (en) * 1966-08-25 1968-11-05 Emil R. Capita Vapor plating apparatus including rotatable substrate support

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2135559A (en) * 1983-02-14 1984-08-30 Electricity Council Induction heaters

Also Published As

Publication number Publication date
US3659552A (en) 1972-05-02
SE323353B (en) 1970-05-04
ES348706A1 (en) 1969-07-01
BE707980A (en) 1968-04-16
DE1621394A1 (en) 1971-06-03
IL29056A (en) 1971-01-28
NL6717117A (en) 1968-06-17
FR1561186A (en) 1969-03-28

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PLNP Patent lapsed through nonpayment of renewal fees