IL29056A - Methods and apparatus for heating and/or coating articles - Google Patents
Methods and apparatus for heating and/or coating articlesInfo
- Publication number
- IL29056A IL29056A IL29056A IL2905667A IL29056A IL 29056 A IL29056 A IL 29056A IL 29056 A IL29056 A IL 29056A IL 2905667 A IL2905667 A IL 2905667A IL 29056 A IL29056 A IL 29056A
- Authority
- IL
- Israel
- Prior art keywords
- tha
- tho
- methods
- heating
- artioiaa
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/12—Substrate holders or susceptors
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4587—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially vertically
- C23C16/4588—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially vertically the substrate being rotated
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68771—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting more than one semiconductor substrate
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Vapour Deposition (AREA)
Description
This invention relates to methods and apparatus for heating coating articles in methods and apparatus for epitaxially depositing coatings of semiconductor material onto slices of such the general object of this invention is to provide new and improved methods and apparatus of such The production of epitaxially deposited ductor such as requires special techniques to insure uniformity of deposited For in British Patent methods and apparatus are described that teach the placing of silicon slices onto a circular heating plate and the rotation of the plate about its principal The plate is placed within a bell jar and heated inductively from within the bell jar by a adjacent to the A carrier gas saturated with of the semiconductor involved silicon is introduced from below and passes upwardly along the axis of the rotating heating plate through a central orifice Hartman et provide epitaxially deposited semiconductor slices of high quality and high the number of slices that can be uniformly treated by the Hartman et apparatus is for to the neighborhood of 20 one and inch diameter Other commercial capable of treating larger about 60 to 70 one and inch diameter generally suffer nonuniform epitaxial posits among the In S epitaxial it the a of of a it of this d n a a of a of t P to a and pp a iaX o of o oartain p hollow ioaX adapted to a of ita io of to aa a a a plurality of with fiat n rf at a o 3 with flat earn ia ia a opita of onto t a at of aiXioon t rotating tha a In with of as haa a t t of a that that tha h the with pri t that tho tha tha a the heated without haa tha jar is d a path an aaarato to the r articles articles to a ara d is a fo a the the tha jar la a ta affect tha of A will tha with tha a 1 is in e io o o la or ls in an a i n io of of 4 of f o with too of too a of of fito dataiX to too of an ifea al o of of olioa itn a of to oapaai g epitaxial so raa oaoa a 13 boll jar 13 o aoa s ao nail of holds a 1 of portiona of too ao a a flat at a of 21 ara 22 the of tha to tha aa a I la oaapor Plata 14 la to a p other of the to a fl 24 of a hollow that la rotate ait a aroa an tight quarto abaft from boloa of tha ahaft 26 to an to bo ball of pa p to the 12 in to air the gear 54 io tha hallow abaft aa to with to ahaft m from tba shaft e ar 59 to work or 16 4C era tba 12 tba l 14 out As o tha of boll Radio a to tha 41 tha 15 ara h o 10 within pa p o tha graphit oaa o to of 100 at of A a o the soil 41 tatia i radiation the to d 42 to t oa i o that 42 aaiX a 43 that oa A of is a flat at the p tha with a tha 18 to a of to a atoa la li is to hold tho at a a for A ha to a to in 1 ao with at ball tha and the shield the of tha tha 16 bo to oaay of or of a bottom ita 5 fits onto 21 to tha graphita fita onto opaoaro 21 that ara into 22 of its o lion of one of tha tho t a am tho onto tho baaa aan tn 10 into tha of tha ly tha ball jar 41 tha opioid 42 than ara into tha that tha hell r 13 tho 31 aa th tap air within tho ball in V n to Radio in than to tha indention 41 inda tha hydrogon into tha hall an oat s o to 10 t 200 1 a of so a of io vapor is ro to to to ta from 14 rats of is par 4 s of a toraod 50 is al io a i a of are o sf to of pi o Im fig oi of total of 120 slices for at a airodlsr pooko for he i ie in at email the principal three 10 o pXete that with a a arpple a a a tw op aide hr aide with apparatus the other loaded a While ral of the detail hereiBahove it he that a the witho t departing the spirit the the t epitaxial of heating ae aeed the the ie to to the aM the aa insufficientOCRQuality
Claims (1)
- a a artioiaa steps o tss raXioX to at a rotation a tho of artioiaa n Pita tho artioiaa aX too rotation of support to the ar for oo a a for to tho to hoat ar too aaii or lo a of witkin r rat tha la at a prada ari oontraX of rotation a that rotata in oon tho ar haataa aation tho to tha a parata or tho to x is ao format artialaa ara ta ta for mm of a far A pa of im f d ami im least or a a a of g to insufficientOCRQuality
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US60188566A | 1966-12-15 | 1966-12-15 |
Publications (1)
Publication Number | Publication Date |
---|---|
IL29056A true IL29056A (en) | 1971-01-28 |
Family
ID=24409132
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IL29056A IL29056A (en) | 1966-12-15 | 1967-12-03 | Methods and apparatus for heating and/or coating articles |
Country Status (9)
Country | Link |
---|---|
US (1) | US3659552A (en) |
BE (1) | BE707980A (en) |
DE (1) | DE1621394A1 (en) |
ES (1) | ES348706A1 (en) |
FR (1) | FR1561186A (en) |
GB (1) | GB1210537A (en) |
IL (1) | IL29056A (en) |
NL (1) | NL6717117A (en) |
SE (1) | SE323353B (en) |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4047496A (en) * | 1974-05-31 | 1977-09-13 | Applied Materials, Inc. | Epitaxial radiation heated reactor |
US4018184A (en) * | 1975-07-28 | 1977-04-19 | Mitsubishi Denki Kabushiki Kaisha | Apparatus for treatment of semiconductor wafer |
DE2943634C2 (en) * | 1979-10-29 | 1983-09-29 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Epitaxial reactor |
GB2135559B (en) * | 1983-02-14 | 1986-10-08 | Electricity Council | Induction heaters |
JPS60116778A (en) * | 1983-11-23 | 1985-06-24 | ジエミニ リサーチ,インコーポレイテツド | Chemical deposition and device |
DE3485898D1 (en) * | 1983-12-09 | 1992-10-01 | Applied Materials Inc | INDUCTIONALLY HEATED REACTOR FOR CHEMICAL DEPOSITION FROM THE STEAM PHASE. |
DE3540628C2 (en) * | 1984-11-16 | 1994-09-29 | Sony Corp | Making an epitaxial film by chemical vapor deposition |
US4653428A (en) * | 1985-05-10 | 1987-03-31 | General Electric Company | Selective chemical vapor deposition apparatus |
US4672210A (en) * | 1985-09-03 | 1987-06-09 | Eaton Corporation | Ion implanter target chamber |
US4838983A (en) * | 1986-07-03 | 1989-06-13 | Emcore, Inc. | Gas treatment apparatus and method |
US4772356A (en) * | 1986-07-03 | 1988-09-20 | Emcore, Inc. | Gas treatment apparatus and method |
US5438181A (en) * | 1993-12-14 | 1995-08-01 | Essex Specialty Products, Inc. | Apparatus for heating substrate having electrically-conductive and non-electrically-conductive portions |
US6217662B1 (en) * | 1997-03-24 | 2001-04-17 | Cree, Inc. | Susceptor designs for silicon carbide thin films |
IL125690A0 (en) * | 1998-08-06 | 1999-04-11 | Reiser Raphael Joshua | Furnace for processing semiconductor wafers |
DE10019070A1 (en) * | 2000-04-18 | 2001-10-25 | Moeller Gmbh | Device for de-gassing and soldering pre-mounted vacuum switch tubes has base plate with solder point(s), opening for connecting suction pump, bell, stimulation coil, generator and susceptor |
US8540818B2 (en) * | 2009-04-28 | 2013-09-24 | Mitsubishi Materials Corporation | Polycrystalline silicon reactor |
WO2013083196A1 (en) * | 2011-12-08 | 2013-06-13 | Applied Materials, Inc. | Substrate holder for full area processing, carrier and method of processing substrates |
US8807550B2 (en) * | 2011-12-13 | 2014-08-19 | Intermolecular, Inc. | Method and apparatus for controlling force between reactor and substrate |
US9076674B2 (en) * | 2012-09-25 | 2015-07-07 | Intermolecular, Inc. | Method and apparatus for improving particle performance |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL111901C (en) * | 1950-09-12 | 1900-01-01 | ||
US2767682A (en) * | 1951-03-22 | 1956-10-23 | Syntron Co | Vaporizing apparatus for producing selenium rectifiers |
US2828225A (en) * | 1954-03-01 | 1958-03-25 | Sintercast Corp America | Methods of infiltrating high melting skeleton bodies |
US2906236A (en) * | 1954-05-11 | 1959-09-29 | Syntron Co | Revolving cylindrical frame for selenium depositors |
US2885997A (en) * | 1956-02-06 | 1959-05-12 | Heraeus Gmbh W C | Vacuum coating |
US3019129A (en) * | 1959-08-10 | 1962-01-30 | Nat Res Corp | Apparatus and process for coating |
US3131098A (en) * | 1960-10-26 | 1964-04-28 | Merck & Co Inc | Epitaxial deposition on a substrate placed in a socket of the carrier member |
NL276676A (en) * | 1961-04-13 | |||
US3301213A (en) * | 1962-10-23 | 1967-01-31 | Ibm | Epitaxial reactor apparatus |
US3329524A (en) * | 1963-06-12 | 1967-07-04 | Temescal Metallurgical Corp | Centrifugal-type vapor source |
US3424629A (en) * | 1965-12-13 | 1969-01-28 | Ibm | High capacity epitaxial apparatus and method |
US3408982A (en) * | 1966-08-25 | 1968-11-05 | Emil R. Capita | Vapor plating apparatus including rotatable substrate support |
-
1966
- 1966-12-15 US US601885A patent/US3659552A/en not_active Expired - Lifetime
-
1967
- 1967-11-21 GB GB52825/67A patent/GB1210537A/en not_active Expired
- 1967-12-03 IL IL29056A patent/IL29056A/en unknown
- 1967-12-07 DE DE19671621394 patent/DE1621394A1/en active Pending
- 1967-12-14 BE BE707980D patent/BE707980A/xx unknown
- 1967-12-14 SE SE17175/67A patent/SE323353B/xx unknown
- 1967-12-14 FR FR1561186D patent/FR1561186A/fr not_active Expired
- 1967-12-15 ES ES348706A patent/ES348706A1/en not_active Expired
- 1967-12-15 NL NL6717117A patent/NL6717117A/xx unknown
Also Published As
Publication number | Publication date |
---|---|
US3659552A (en) | 1972-05-02 |
DE1621394A1 (en) | 1971-06-03 |
SE323353B (en) | 1970-05-04 |
BE707980A (en) | 1968-04-16 |
GB1210537A (en) | 1970-10-28 |
NL6717117A (en) | 1968-06-17 |
FR1561186A (en) | 1969-03-28 |
ES348706A1 (en) | 1969-07-01 |
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