GB1281539A - Semiconductor processing reactors - Google Patents

Semiconductor processing reactors

Info

Publication number
GB1281539A
GB1281539A GB48190/69A GB4819069A GB1281539A GB 1281539 A GB1281539 A GB 1281539A GB 48190/69 A GB48190/69 A GB 48190/69A GB 4819069 A GB4819069 A GB 4819069A GB 1281539 A GB1281539 A GB 1281539A
Authority
GB
United Kingdom
Prior art keywords
substrates
axis
susceptors
diffusers
silane
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB48190/69A
Inventor
Kenneth Elwood Bean
John Richard Campion
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Publication of GB1281539A publication Critical patent/GB1281539A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

1281539 Silica and silicon nitride TEXAS INSTRUMENTS Inc 1 Oct 1969 [31 Dec 1968] 48190/69 Heading C1A [Also in Division C7] A reactor 10 which may be used to deposit SiO 2 or Si 3 N 4 on substrates comprises, as shown in Figs. 1 and 2, a dome 12 and a base 16 in which a drive mechanism rotates causing supports, e.g. susceptors 32-37, to rotate about their own axis whilst they simultaneously move around the chamber about a common axis passing through the chamber, each support being arranged to carry in recessed portions therein the semi-conductor substrates, e.g. discs 56 58, being treated, which due to the rotation of the support about its own axis, roll around the rim 54 of the recess, any required reactant gas being admitted via the axis 24 (Fig. 2) or the diffusers 60, and being withdrawn through an exhaust outlet (not shown), the substrates being heated by any appropriate heating means. Preferably, the heating means is an R.F. coil 62 (Fig. 2) arranged behind the susceptors. In depositing silicon oxide a silane may be introduced through the shaft 24 and oxygen through the diffusers 60 whilst the semi-conductor substrates are maintained at a temp. in the range 200-500‹ C. A silicon nitride layer may be deposited at temps. from 550‹ to 1200‹ C. using silane and ammonia. Silicon may also be deposited.
GB48190/69A 1968-12-31 1969-10-01 Semiconductor processing reactors Expired GB1281539A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US78825068A 1968-12-31 1968-12-31

Publications (1)

Publication Number Publication Date
GB1281539A true GB1281539A (en) 1972-07-12

Family

ID=25143901

Family Applications (1)

Application Number Title Priority Date Filing Date
GB48190/69A Expired GB1281539A (en) 1968-12-31 1969-10-01 Semiconductor processing reactors

Country Status (6)

Country Link
US (1) US3608519A (en)
JP (1) JPS4931197B1 (en)
DE (1) DE1949767C3 (en)
FR (1) FR2027422A1 (en)
GB (1) GB1281539A (en)
NL (1) NL6919568A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4446817A (en) * 1980-12-20 1984-05-08 Cambridge Instruments Limited Apparatus for vapor deposition of a film on a substrate
US4501766A (en) * 1982-02-03 1985-02-26 Tokyo Shibaura Denki Kabushiki Kaisha Film depositing apparatus and a film depositing method
GB2212173A (en) * 1987-11-11 1989-07-19 Sumitomo Chemical Co Heated reactor for vapor-phase growth of films

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3783821A (en) * 1971-03-02 1974-01-08 K Willmott Planetary workholders
NL7103019A (en) * 1971-03-06 1972-09-08
US3783822A (en) * 1972-05-10 1974-01-08 J Wollam Apparatus for use in deposition of films from a vapor phase
US3850138A (en) * 1972-06-22 1974-11-26 Varian Spa Leini Substrate carrying apparatus for use in coating equipment
SE393967B (en) * 1974-11-29 1977-05-31 Sateko Oy PROCEDURE AND PERFORMANCE OF LAYING BETWEEN THE STORAGE IN A LABOR PACKAGE
US3939798A (en) * 1974-12-19 1976-02-24 Texas Instruments Incorporated Optical thin film coater
US4673799A (en) * 1985-03-01 1987-06-16 Focus Semiconductor Systems, Inc. Fluidized bed heater for semiconductor processing
JPH07122132B2 (en) * 1990-11-01 1995-12-25 松下電器産業株式会社 Thin film forming method and thin film forming apparatus
KR100333237B1 (en) * 1993-10-29 2002-09-12 어플라이드 머티어리얼스, 인코포레이티드 Contaminant reduction improvements for plasma etch chambers
US5558721A (en) * 1993-11-15 1996-09-24 The Furukawa Electric Co., Ltd. Vapor phase growth system and a gas-drive motor
AU7403694A (en) * 1994-07-19 1996-02-16 American Plating Systems, Inc. Electrolytic plating apparatus and method
CA2282771A1 (en) * 1999-09-17 2001-03-17 Dale William Mackenzie Method and apparatus for boronizing a metal workpiece
US6475284B1 (en) * 1999-09-20 2002-11-05 Moore Epitaxial, Inc. Gas dispersion head
US6578600B1 (en) * 2000-10-31 2003-06-17 International Business Machines Corporation Gas isolation box
US20030010775A1 (en) * 2001-06-21 2003-01-16 Hyoung June Kim Methods and apparatuses for heat treatment of semiconductor films upon thermally susceptible non-conducting substrates
US6632282B2 (en) * 2001-09-24 2003-10-14 Neocera, Inc. Planetary multi-substrate holder system for material deposition
DE10320597A1 (en) * 2003-04-30 2004-12-02 Aixtron Ag Method and device for depositing semiconductor layers with two process gases, one of which is preconditioned
US7794667B2 (en) * 2005-10-19 2010-09-14 Moore Epitaxial, Inc. Gas ring and method of processing substrates
US20080079220A1 (en) * 2006-08-29 2008-04-03 Aviza Technology, Inc. Rotary seal for diffusion furnance incorporating nonmetallic seals
WO2011019920A1 (en) 2009-08-12 2011-02-17 Georgia State University Research Foundation, Inc. High pressure chemical vapor deposition apparatuses, methods, and compositions produced therewith
JP5310512B2 (en) * 2009-12-02 2013-10-09 東京エレクトロン株式会社 Substrate processing equipment

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2260471A (en) * 1940-09-28 1941-10-28 Eastman Kodak Co Nonreflecting coating for glass
US2532971A (en) * 1947-04-12 1950-12-05 Pacific Universal Products Cor Method and apparatus for producing optical coatings
US2997979A (en) * 1958-09-15 1961-08-29 Tassara Luigi Apparatus for applying metallic film to electrical components and the like
US3128205A (en) * 1961-09-11 1964-04-07 Optical Coating Laboratory Inc Apparatus for vacuum coating
US3205087A (en) * 1961-12-15 1965-09-07 Martin Marietta Corp Selective vacuum deposition of thin film
US3442572A (en) * 1964-08-25 1969-05-06 Optical Coating Laboratory Inc Circular variable filter
US3424629A (en) * 1965-12-13 1969-01-28 Ibm High capacity epitaxial apparatus and method
US3408982A (en) * 1966-08-25 1968-11-05 Emil R. Capita Vapor plating apparatus including rotatable substrate support
US3486237A (en) * 1967-09-29 1969-12-30 Bausch & Lomb Positioning tool for vacuum chamber workholder
US3523517A (en) * 1968-09-04 1970-08-11 Sloan Instr Corp Rotating workpiece holder

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4446817A (en) * 1980-12-20 1984-05-08 Cambridge Instruments Limited Apparatus for vapor deposition of a film on a substrate
US4501766A (en) * 1982-02-03 1985-02-26 Tokyo Shibaura Denki Kabushiki Kaisha Film depositing apparatus and a film depositing method
GB2212173A (en) * 1987-11-11 1989-07-19 Sumitomo Chemical Co Heated reactor for vapor-phase growth of films
US4976216A (en) * 1987-11-11 1990-12-11 Sumitomo Chemical Co., Ltd. Apparatus for vapor-phase growth
GB2212173B (en) * 1987-11-11 1991-10-16 Sumitomo Chemical Co Heated reactor fo vapor-phase growth of films

Also Published As

Publication number Publication date
JPS4931197B1 (en) 1974-08-20
FR2027422A1 (en) 1970-09-25
DE1949767C3 (en) 1974-08-15
DE1949767A1 (en) 1970-10-15
US3608519A (en) 1971-09-28
NL6919568A (en) 1970-07-02
DE1949767B2 (en) 1974-01-10

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PLNP Patent lapsed through nonpayment of renewal fees