GB1416824A - Crystal growing - Google Patents
Crystal growingInfo
- Publication number
- GB1416824A GB1416824A GB827273A GB827273A GB1416824A GB 1416824 A GB1416824 A GB 1416824A GB 827273 A GB827273 A GB 827273A GB 827273 A GB827273 A GB 827273A GB 1416824 A GB1416824 A GB 1416824A
- Authority
- GB
- United Kingdom
- Prior art keywords
- crucible
- solution
- crystal
- crystallization
- horizontal axis
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B9/00—Single-crystal growth from melt solutions using molten solvents
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/22—Complex oxides
- C30B29/28—Complex oxides with formula A3Me5O12 wherein A is a rare earth metal and Me is Fe, Ga, Sc, Cr, Co or Al, e.g. garnets
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Compounds Of Iron (AREA)
Abstract
1416824 Mixed single crystals PHILIPS ELECTRONIC & ASSOCIATED INDUSTRIES Ltd 20 Feb 1973 [23 Feb 1972] 8272/73 Headings BIS and BIG A mixed single crystal is made from a liquid solution of the components of the crystal in a crucible rotatable about a horizontal axis by heating the solution to a temperature above the point of spontaneous nucleation, cooling the solution until nucleation occurs, rotating the crucible about its horizontal axis so that the warmest zone of the solution is contacted with replenishment quantities of the components and optionally a seed crystal is introduced into the coolest zone of the solution, localizing the crystallization by local cooling and when crystallization is completed, separating the liquid solution from the crystal by rotation of the crucible about its horizontal axis. The crucible may also be rotated about a vertical axis. The mixed single crystal formed is preferably one in which part of the iron in a yittrium-irongarnet is replaced by gallium. The method is preferably carried out as shown in the Figures. Figure 1 shows generally the crucible 9 positioned in the furnace with air inlets 2 and exhaust device 3, and insulation layers 4, 5 and 6. The crucible is held in position by holder 10, and is rotatable and swingable about shafts 13 and 14. On the outside of the crucible a desaeration tube 15 is provided whereby no liquid can leave the crucible when it is rotated. In Figs. 2-4, the crucible 9 which contains solution 19 and seed crystal 16 is shown in the starting position. The additional materials 17, are present in a second crucible 18 which contains apertures 19. Upon rotation of the crucible, Figure 3, the additional material via the apertures 19 contacts the solution 12, and the local cooling is effected by cooling finger 20 extending through the furnace. Figure 4, shows the position of the crucible after termination of the crystallization,
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE2208380A DE2208380C3 (en) | 1972-02-23 | 1972-02-23 | Method and device for producing mixed single crystals |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1416824A true GB1416824A (en) | 1975-12-10 |
Family
ID=5836746
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB827273A Expired GB1416824A (en) | 1972-02-23 | 1973-02-20 | Crystal growing |
Country Status (4)
Country | Link |
---|---|
JP (1) | JPS5323779B2 (en) |
DE (1) | DE2208380C3 (en) |
FR (1) | FR2173169B1 (en) |
GB (1) | GB1416824A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111074333A (en) * | 2018-10-19 | 2020-04-28 | 中国电子科技集团公司第四十八研究所 | Single crystal growth equipment and use method thereof |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3644746A1 (en) * | 1986-12-30 | 1988-07-14 | Hagen Hans Dr Ing | Process and apparatus for growing crystals |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB952385A (en) * | 1961-08-30 | 1964-03-18 | Gen Electric Co Ltd | Improvements in or relating to the manufacture of single crystals |
DE1769659B1 (en) * | 1968-06-25 | 1971-04-08 | Philips Patentverwaltung | DEVICE FOR PROTECTING SINGLE CRYSTALS |
-
1972
- 1972-02-23 DE DE2208380A patent/DE2208380C3/en not_active Expired
-
1973
- 1973-02-20 GB GB827273A patent/GB1416824A/en not_active Expired
- 1973-02-20 JP JP2059973A patent/JPS5323779B2/ja not_active Expired
- 1973-02-22 FR FR7306268A patent/FR2173169B1/fr not_active Expired
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111074333A (en) * | 2018-10-19 | 2020-04-28 | 中国电子科技集团公司第四十八研究所 | Single crystal growth equipment and use method thereof |
Also Published As
Publication number | Publication date |
---|---|
JPS4899083A (en) | 1973-12-15 |
DE2208380A1 (en) | 1973-09-06 |
DE2208380C3 (en) | 1980-03-06 |
FR2173169B1 (en) | 1978-03-03 |
DE2208380B2 (en) | 1979-06-28 |
JPS5323779B2 (en) | 1978-07-17 |
FR2173169A1 (en) | 1973-10-05 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PS | Patent sealed | ||
PCNP | Patent ceased through non-payment of renewal fee |