GB1416824A - Crystal growing - Google Patents

Crystal growing

Info

Publication number
GB1416824A
GB1416824A GB827273A GB827273A GB1416824A GB 1416824 A GB1416824 A GB 1416824A GB 827273 A GB827273 A GB 827273A GB 827273 A GB827273 A GB 827273A GB 1416824 A GB1416824 A GB 1416824A
Authority
GB
United Kingdom
Prior art keywords
crucible
solution
crystal
crystallization
horizontal axis
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB827273A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Philips Electronics UK Ltd
Original Assignee
Philips Electronic and Associated Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Electronic and Associated Industries Ltd filed Critical Philips Electronic and Associated Industries Ltd
Publication of GB1416824A publication Critical patent/GB1416824A/en
Expired legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B9/00Single-crystal growth from melt solutions using molten solvents
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10Inorganic compounds or compositions
    • C30B29/16Oxides
    • C30B29/22Complex oxides
    • C30B29/28Complex oxides with formula A3Me5O12 wherein A is a rare earth metal and Me is Fe, Ga, Sc, Cr, Co or Al, e.g. garnets

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Compounds Of Iron (AREA)

Abstract

1416824 Mixed single crystals PHILIPS ELECTRONIC & ASSOCIATED INDUSTRIES Ltd 20 Feb 1973 [23 Feb 1972] 8272/73 Headings BIS and BIG A mixed single crystal is made from a liquid solution of the components of the crystal in a crucible rotatable about a horizontal axis by heating the solution to a temperature above the point of spontaneous nucleation, cooling the solution until nucleation occurs, rotating the crucible about its horizontal axis so that the warmest zone of the solution is contacted with replenishment quantities of the components and optionally a seed crystal is introduced into the coolest zone of the solution, localizing the crystallization by local cooling and when crystallization is completed, separating the liquid solution from the crystal by rotation of the crucible about its horizontal axis. The crucible may also be rotated about a vertical axis. The mixed single crystal formed is preferably one in which part of the iron in a yittrium-irongarnet is replaced by gallium. The method is preferably carried out as shown in the Figures. Figure 1 shows generally the crucible 9 positioned in the furnace with air inlets 2 and exhaust device 3, and insulation layers 4, 5 and 6. The crucible is held in position by holder 10, and is rotatable and swingable about shafts 13 and 14. On the outside of the crucible a desaeration tube 15 is provided whereby no liquid can leave the crucible when it is rotated. In Figs. 2-4, the crucible 9 which contains solution 19 and seed crystal 16 is shown in the starting position. The additional materials 17, are present in a second crucible 18 which contains apertures 19. Upon rotation of the crucible, Figure 3, the additional material via the apertures 19 contacts the solution 12, and the local cooling is effected by cooling finger 20 extending through the furnace. Figure 4, shows the position of the crucible after termination of the crystallization,
GB827273A 1972-02-23 1973-02-20 Crystal growing Expired GB1416824A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2208380A DE2208380C3 (en) 1972-02-23 1972-02-23 Method and device for producing mixed single crystals

Publications (1)

Publication Number Publication Date
GB1416824A true GB1416824A (en) 1975-12-10

Family

ID=5836746

Family Applications (1)

Application Number Title Priority Date Filing Date
GB827273A Expired GB1416824A (en) 1972-02-23 1973-02-20 Crystal growing

Country Status (4)

Country Link
JP (1) JPS5323779B2 (en)
DE (1) DE2208380C3 (en)
FR (1) FR2173169B1 (en)
GB (1) GB1416824A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111074333A (en) * 2018-10-19 2020-04-28 中国电子科技集团公司第四十八研究所 Single crystal growth equipment and use method thereof

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3644746A1 (en) * 1986-12-30 1988-07-14 Hagen Hans Dr Ing Process and apparatus for growing crystals

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB952385A (en) * 1961-08-30 1964-03-18 Gen Electric Co Ltd Improvements in or relating to the manufacture of single crystals
DE1769659B1 (en) * 1968-06-25 1971-04-08 Philips Patentverwaltung DEVICE FOR PROTECTING SINGLE CRYSTALS

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111074333A (en) * 2018-10-19 2020-04-28 中国电子科技集团公司第四十八研究所 Single crystal growth equipment and use method thereof

Also Published As

Publication number Publication date
JPS4899083A (en) 1973-12-15
DE2208380A1 (en) 1973-09-06
DE2208380C3 (en) 1980-03-06
FR2173169B1 (en) 1978-03-03
DE2208380B2 (en) 1979-06-28
JPS5323779B2 (en) 1978-07-17
FR2173169A1 (en) 1973-10-05

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Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee