GB1386856A - Growing epitaxial layers - Google Patents
Growing epitaxial layersInfo
- Publication number
- GB1386856A GB1386856A GB1661172A GB1661172A GB1386856A GB 1386856 A GB1386856 A GB 1386856A GB 1661172 A GB1661172 A GB 1661172A GB 1661172 A GB1661172 A GB 1661172A GB 1386856 A GB1386856 A GB 1386856A
- Authority
- GB
- United Kingdom
- Prior art keywords
- solution
- substrate
- flux
- nutrient
- contact
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
- H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
- H01F41/24—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates from liquids
- H01F41/28—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates from liquids by liquid phase epitaxy
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/26—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on ferrites
- C04B35/2675—Other ferrites containing rare earth metals, e.g. rare earth ferrite garnets
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B19/00—Liquid-phase epitaxial-layer growth
- C30B19/02—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B19/00—Liquid-phase epitaxial-layer growth
- C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
- C30B19/062—Vertical dipping system
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/20—Aluminium oxides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/22—Complex oxides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/22—Complex oxides
- C30B29/26—Complex oxides with formula BMe2O4, wherein B is Mg, Ni, Co, Al, Zn, or Cd and Me is Fe, Ga, Sc, Cr, Co, or Al
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/22—Complex oxides
- C30B29/28—Complex oxides with formula A3Me5O12 wherein A is a rare earth metal and Me is Fe, Ga, Sc, Cr, Co or Al, e.g. garnets
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
- G11C19/02—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements
- G11C19/08—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Metallurgy (AREA)
- Inorganic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Power Engineering (AREA)
- Structural Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
1386856 Epitaxial growth on a substrate WESTERN ELECTRIC CO INC 11 April 1972 [12 April 1971 16 July 1971] 16611/72 Heading B1S An epitaxial layer is grown on a substrate by contacting the latter with a liquid nutrientflux solution so that growth occurs on contact and wherein prior to contact the nutrient-flux solution is super-saturated and formed by cooling the solution to an initial nucleation temperature which is less than 950‹C and is at least 10‹C below the saturation temperature of the solution which remains in the liquid state. The lattice parameters between the epitaxial layer and the substrate may differ by not more than 1.0%. The specification includes an extensive list of substrates, nutrients and fluxes. The substrates and nutrients may be selected from garnets, spinels ferrites, orthoferrites, corundum, yttrium, rare earth orthoaluminates or lead niobate. The nutrient flux is preferably a boron oxide-, lead oxide mixture or a bismuth oxide-vanadium oxide mixture. Nutrient-flux solution is prepared in the usual manner from powdered ingredients with the desired layer. Following formation of the solution, the substrate is generally brought to the temperature of the solution e.g. by suspending the substrate over the surface of the solution. The layer is preferably grown in the apparatus shown wherein a platinium crucible 11 supported on a pedestal 13 is heated by a resistance furnace 12 and contains the desired flux-solution 17. The substrate 18 is supported in holder 14, and contact with the solution controlled by pulling means 15.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13336171A | 1971-04-12 | 1971-04-12 | |
US16339671A | 1971-07-16 | 1971-07-16 |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1386856A true GB1386856A (en) | 1975-03-12 |
Family
ID=26831310
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB1661172A Expired GB1386856A (en) | 1971-04-12 | 1972-04-11 | Growing epitaxial layers |
Country Status (8)
Country | Link |
---|---|
JP (1) | JPS5222955B1 (en) |
BE (1) | BE781919A (en) |
DE (1) | DE2217301C3 (en) |
FR (1) | FR2132849B1 (en) |
GB (1) | GB1386856A (en) |
IT (1) | IT954626B (en) |
NL (1) | NL155459B (en) |
SE (1) | SE385193B (en) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4293372A (en) * | 1980-07-15 | 1981-10-06 | Rockwell International Corporation | Growth of single-crystal magnetoplumbite |
FR2771107B1 (en) * | 1997-11-18 | 1999-12-10 | Commissariat Energie Atomique | LIQUID EPITAXY GROWTH PREPARATION PROCESS OF MONOCRYSTALLINE LAYERS OF LANTHANE MAGNESIUM ALUMINATE (LMA) AND OPTICAL COMPONENTS COMPRISING SUCH LAYERS |
JP3062603B1 (en) * | 1999-07-08 | 2000-07-12 | 東京大学長 | Manufacturing method of single crystal member |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3486937A (en) * | 1967-03-24 | 1969-12-30 | Perkin Elmer Corp | Method of growing a single crystal film of a ferrimagnetic material |
-
1972
- 1972-04-04 SE SE7204285A patent/SE385193B/en unknown
- 1972-04-07 IT IT68090/72A patent/IT954626B/en active
- 1972-04-11 BE BE781919A patent/BE781919A/en not_active IP Right Cessation
- 1972-04-11 GB GB1661172A patent/GB1386856A/en not_active Expired
- 1972-04-11 FR FR7212613A patent/FR2132849B1/fr not_active Expired
- 1972-04-11 NL NL7204826.A patent/NL155459B/en not_active IP Right Cessation
- 1972-04-11 DE DE2217301A patent/DE2217301C3/en not_active Expired
- 1972-04-12 JP JP47036151A patent/JPS5222955B1/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
JPS5222955B1 (en) | 1977-06-21 |
BE781919A (en) | 1972-07-31 |
SE385193B (en) | 1976-06-14 |
DE2217301A1 (en) | 1972-10-26 |
NL155459B (en) | 1978-01-16 |
FR2132849B1 (en) | 1974-12-13 |
FR2132849A1 (en) | 1972-11-24 |
NL7204826A (en) | 1972-10-16 |
DE2217301C3 (en) | 1975-10-16 |
IT954626B (en) | 1973-09-15 |
DE2217301B2 (en) | 1974-05-22 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PS | Patent sealed | ||
PE20 | Patent expired after termination of 20 years |