FR1227508A - Transistor à jonctions - Google Patents

Transistor à jonctions

Info

Publication number
FR1227508A
FR1227508A FR792402A FR792402A FR1227508A FR 1227508 A FR1227508 A FR 1227508A FR 792402 A FR792402 A FR 792402A FR 792402 A FR792402 A FR 792402A FR 1227508 A FR1227508 A FR 1227508A
Authority
FR
France
Prior art keywords
junction transistor
junction
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR792402A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shockley Transistor Corp
Original Assignee
Shockley Transistor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shockley Transistor Corp filed Critical Shockley Transistor Corp
Priority to FR792402A priority Critical patent/FR1227508A/fr
Application granted granted Critical
Publication of FR1227508A publication Critical patent/FR1227508A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
FR792402A 1959-04-17 1959-04-17 Transistor à jonctions Expired FR1227508A (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR792402A FR1227508A (fr) 1959-04-17 1959-04-17 Transistor à jonctions

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR792402A FR1227508A (fr) 1959-04-17 1959-04-17 Transistor à jonctions

Publications (1)

Publication Number Publication Date
FR1227508A true FR1227508A (fr) 1960-08-22

Family

ID=8713780

Family Applications (1)

Application Number Title Priority Date Filing Date
FR792402A Expired FR1227508A (fr) 1959-04-17 1959-04-17 Transistor à jonctions

Country Status (1)

Country Link
FR (1) FR1227508A (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1178947B (de) * 1959-09-25 1964-10-01 Intermetall Verfahren zum Herstellen von Halbleiter-bauelementen mit mindestens einer durch Diffusion dotierten duennen Halbleiterschicht
DE1246890B (de) * 1960-09-20 1967-08-10 Western Electric Co Diffusionsverfahren zum Herstellen eines Halbleiterbauelements
AT381122B (de) * 1974-11-29 1986-08-25 Lohja Ab Oy Verfahren zum zuechten von verbindungs -duennschichten

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1178947B (de) * 1959-09-25 1964-10-01 Intermetall Verfahren zum Herstellen von Halbleiter-bauelementen mit mindestens einer durch Diffusion dotierten duennen Halbleiterschicht
DE1246890B (de) * 1960-09-20 1967-08-10 Western Electric Co Diffusionsverfahren zum Herstellen eines Halbleiterbauelements
AT381122B (de) * 1974-11-29 1986-08-25 Lohja Ab Oy Verfahren zum zuechten von verbindungs -duennschichten

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