CN1505839A - 半导体器件 - Google Patents
半导体器件 Download PDFInfo
- Publication number
- CN1505839A CN1505839A CNA018202047A CN01820204A CN1505839A CN 1505839 A CN1505839 A CN 1505839A CN A018202047 A CNA018202047 A CN A018202047A CN 01820204 A CN01820204 A CN 01820204A CN 1505839 A CN1505839 A CN 1505839A
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- China
- Prior art keywords
- field effect
- effect transistors
- type field
- channel type
- stress
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 159
- 230000005669 field effect Effects 0.000 claims abstract description 560
- 230000006835 compression Effects 0.000 claims abstract description 49
- 238000007906 compression Methods 0.000 claims abstract description 49
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 70
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 70
- 239000000758 substrate Substances 0.000 claims description 63
- 239000012528 membrane Substances 0.000 claims description 53
- 238000004519 manufacturing process Methods 0.000 claims description 40
- 239000000463 material Substances 0.000 claims description 40
- 229910021332 silicide Inorganic materials 0.000 claims description 39
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical group [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 38
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 36
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 32
- 238000000034 method Methods 0.000 claims description 32
- 229910052710 silicon Inorganic materials 0.000 claims description 32
- 239000010703 silicon Substances 0.000 claims description 32
- 239000012535 impurity Substances 0.000 claims description 19
- 239000013078 crystal Substances 0.000 claims description 18
- 230000007797 corrosion Effects 0.000 claims description 15
- 238000005260 corrosion Methods 0.000 claims description 15
- 239000000377 silicon dioxide Substances 0.000 claims description 13
- 238000002955 isolation Methods 0.000 claims description 7
- 238000001069 Raman spectroscopy Methods 0.000 claims description 6
- 230000004888 barrier function Effects 0.000 claims description 6
- 239000010941 cobalt Substances 0.000 claims description 4
- 229910017052 cobalt Inorganic materials 0.000 claims description 4
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 4
- 230000001678 irradiating effect Effects 0.000 claims description 4
- 238000000926 separation method Methods 0.000 claims description 4
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 claims description 3
- 229910021334 nickel silicide Inorganic materials 0.000 claims description 3
- 229910021341 titanium silicide Inorganic materials 0.000 claims description 3
- 229910019001 CoSi Inorganic materials 0.000 claims description 2
- 229910008484 TiSi Inorganic materials 0.000 claims description 2
- 230000005611 electricity Effects 0.000 claims description 2
- 230000035882 stress Effects 0.000 description 494
- 239000010408 film Substances 0.000 description 406
- 230000014509 gene expression Effects 0.000 description 62
- 230000000694 effects Effects 0.000 description 54
- 230000015572 biosynthetic process Effects 0.000 description 32
- 238000005755 formation reaction Methods 0.000 description 32
- 208000005189 Embolism Diseases 0.000 description 21
- 239000010410 layer Substances 0.000 description 21
- 239000011229 interlayer Substances 0.000 description 20
- 238000004458 analytical method Methods 0.000 description 18
- 230000009471 action Effects 0.000 description 13
- 230000001419 dependent effect Effects 0.000 description 13
- 230000008859 change Effects 0.000 description 12
- 229910052814 silicon oxide Inorganic materials 0.000 description 10
- 238000010276 construction Methods 0.000 description 9
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 9
- 229920005591 polysilicon Polymers 0.000 description 9
- 238000012545 processing Methods 0.000 description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- 230000008676 import Effects 0.000 description 8
- 238000005266 casting Methods 0.000 description 6
- 230000008878 coupling Effects 0.000 description 6
- 238000010168 coupling process Methods 0.000 description 6
- 238000005859 coupling reaction Methods 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 6
- 238000010010 raising Methods 0.000 description 6
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 5
- 230000000295 complement effect Effects 0.000 description 5
- 238000002425 crystallisation Methods 0.000 description 5
- 230000008025 crystallization Effects 0.000 description 5
- 238000009826 distribution Methods 0.000 description 5
- 230000013011 mating Effects 0.000 description 5
- 230000003647 oxidation Effects 0.000 description 5
- 238000007254 oxidation reaction Methods 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- 239000010936 titanium Substances 0.000 description 5
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 229910052732 germanium Inorganic materials 0.000 description 4
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- 238000001947 vapour-phase growth Methods 0.000 description 4
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 238000001259 photo etching Methods 0.000 description 3
- 238000011160 research Methods 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 230000008719 thickening Effects 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 239000002800 charge carrier Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000008602 contraction Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 239000005022 packaging material Substances 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 229910052707 ruthenium Inorganic materials 0.000 description 2
- 102100031102 C-C motif chemokine 4 Human genes 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 102100026620 E3 ubiquitin ligase TRAF3IP2 Human genes 0.000 description 1
- 101710140859 E3 ubiquitin ligase TRAF3IP2 Proteins 0.000 description 1
- 101000777470 Mus musculus C-C motif chemokine 4 Proteins 0.000 description 1
- 206010042209 Stress Diseases 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(iv) oxide Chemical compound O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 1
- 238000007373 indentation Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000013081 microcrystal Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 229910052596 spinel Inorganic materials 0.000 description 1
- 239000011029 spinel Substances 0.000 description 1
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7842—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823807—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the channel structures, e.g. channel implants, halo or pocket implants, or channel materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823814—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the source or drain structures, e.g. specific source or drain implants or silicided source or drain structures or raised source or drain structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823828—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes
- H01L21/823842—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes gate conductors with different gate conductor materials or different gate conductor implants, e.g. dual gate structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7842—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate
- H01L29/7843—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate the means being an applied insulating layer
Abstract
Description
Claims (17)
Applications Claiming Priority (10)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP379785/00 | 2000-12-08 | ||
JP379785/2000 | 2000-12-08 | ||
JP2000379785 | 2000-12-08 | ||
JP191612/01 | 2001-06-25 | ||
JP191612/2001 | 2001-06-25 | ||
JP2001191612 | 2001-06-25 | ||
JP342667/01 | 2001-11-08 | ||
JP2001342667A JP2003086708A (ja) | 2000-12-08 | 2001-11-08 | 半導体装置及びその製造方法 |
JP342667/2001 | 2001-11-08 | ||
PCT/JP2001/010692 WO2002047167A1 (fr) | 2000-12-08 | 2001-12-06 | Dispositif a semi-conducteur |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1505839A true CN1505839A (zh) | 2004-06-16 |
CN100382315C CN100382315C (zh) | 2008-04-16 |
Family
ID=27345439
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB018202047A Expired - Lifetime CN100382315C (zh) | 2000-12-08 | 2001-12-06 | 半导体器件 |
Country Status (7)
Country | Link |
---|---|
US (1) | US6982465B2 (zh) |
JP (1) | JP2003086708A (zh) |
KR (1) | KR100562441B1 (zh) |
CN (1) | CN100382315C (zh) |
MY (1) | MY144640A (zh) |
TW (1) | TW518749B (zh) |
WO (1) | WO2002047167A1 (zh) |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100392830C (zh) * | 2005-04-08 | 2008-06-04 | 联华电子股份有限公司 | 制作金属氧化物半导体晶体管的方法 |
CN100411175C (zh) * | 2004-11-30 | 2008-08-13 | 国际商业机器公司 | 将应力施加到pfet和nfet晶体管沟道的结构和制造方法 |
CN100433276C (zh) * | 2004-12-15 | 2008-11-12 | 台湾积体电路制造股份有限公司 | 具有区域化应力结构的金属氧化物半导体的场效应晶体管 |
US7476579B2 (en) | 2005-11-15 | 2009-01-13 | International Business Machines Corporation | Method and structure for enhancing both nMOSFET and pMOSFET performance with a stressed film |
US7488690B2 (en) | 2004-07-06 | 2009-02-10 | Applied Materials, Inc. | Silicon nitride film with stress control |
CN101165918B (zh) * | 2006-10-20 | 2011-04-27 | 松下电器产业株式会社 | 半导体装置及其制造方法 |
US7952147B2 (en) * | 2006-05-22 | 2011-05-31 | Samsung Electronics Co., Ltd. | Semiconductor device having analog transistor with improved operating and flicker noise characteristics and method of making same |
CN102136429A (zh) * | 2007-03-20 | 2011-07-27 | 索尼株式会社 | 半导体器件及其制造方法 |
CN102184922A (zh) * | 2010-01-15 | 2011-09-14 | 英特赛尔美国股份有限公司 | 具有使用掩埋金属互连的垂直高端pmos和垂直低端nmos的单片输出级、结构和方法 |
Families Citing this family (160)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000183346A (ja) * | 1998-12-15 | 2000-06-30 | Toshiba Corp | 半導体装置及びその製造方法 |
KR100784603B1 (ko) * | 2000-11-22 | 2007-12-11 | 가부시키가이샤 히타치세이사쿠쇼 | 반도체 장치 및 그 제조 방법 |
JP2005057301A (ja) * | 2000-12-08 | 2005-03-03 | Renesas Technology Corp | 半導体装置及びその製造方法 |
US6703688B1 (en) * | 2001-03-02 | 2004-03-09 | Amberwave Systems Corporation | Relaxed silicon germanium platform for high speed CMOS electronics and high speed analog circuits |
US6830976B2 (en) * | 2001-03-02 | 2004-12-14 | Amberwave Systems Corproation | Relaxed silicon germanium platform for high speed CMOS electronics and high speed analog circuits |
JP4831885B2 (ja) | 2001-04-27 | 2011-12-07 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
JP2003060076A (ja) * | 2001-08-21 | 2003-02-28 | Nec Corp | 半導体装置及びその製造方法 |
JP2003179157A (ja) * | 2001-12-10 | 2003-06-27 | Nec Corp | Mos型半導体装置 |
US6982474B2 (en) * | 2002-06-25 | 2006-01-03 | Amberwave Systems Corporation | Reacted conductive gate electrodes |
JP4406200B2 (ja) * | 2002-12-06 | 2010-01-27 | 株式会社東芝 | 半導体装置 |
US6825529B2 (en) * | 2002-12-12 | 2004-11-30 | International Business Machines Corporation | Stress inducing spacers |
US7001837B2 (en) * | 2003-01-17 | 2006-02-21 | Advanced Micro Devices, Inc. | Semiconductor with tensile strained substrate and method of making the same |
US6870179B2 (en) * | 2003-03-31 | 2005-03-22 | Intel Corporation | Increasing stress-enhanced drive current in a MOS transistor |
JP4085891B2 (ja) * | 2003-05-30 | 2008-05-14 | ソニー株式会社 | 半導体装置およびその製造方法 |
US6982433B2 (en) | 2003-06-12 | 2006-01-03 | Intel Corporation | Gate-induced strain for MOS performance improvement |
JP4557508B2 (ja) | 2003-06-16 | 2010-10-06 | パナソニック株式会社 | 半導体装置 |
US7923785B2 (en) * | 2003-08-18 | 2011-04-12 | Globalfoundries Inc. | Field effect transistor having increased carrier mobility |
JP4176593B2 (ja) * | 2003-09-08 | 2008-11-05 | 株式会社東芝 | 半導体装置及びその設計方法 |
US7303949B2 (en) * | 2003-10-20 | 2007-12-04 | International Business Machines Corporation | High performance stress-enhanced MOSFETs using Si:C and SiGe epitaxial source/drain and method of manufacture |
US6939814B2 (en) * | 2003-10-30 | 2005-09-06 | International Business Machines Corporation | Increasing carrier mobility in NFET and PFET transistors on a common wafer |
US6977194B2 (en) * | 2003-10-30 | 2005-12-20 | International Business Machines Corporation | Structure and method to improve channel mobility by gate electrode stress modification |
US7015082B2 (en) * | 2003-11-06 | 2006-03-21 | International Business Machines Corporation | High mobility CMOS circuits |
US7122849B2 (en) * | 2003-11-14 | 2006-10-17 | International Business Machines Corporation | Stressed semiconductor device structures having granular semiconductor material |
US20050136583A1 (en) * | 2003-12-23 | 2005-06-23 | Taiwan Semiconductor Manufacturing Co. | Advanced strained-channel technique to improve CMOS performance |
WO2005064680A1 (ja) | 2003-12-25 | 2005-07-14 | Fujitsu Limited | 半導体装置および半導体集積回路装置 |
US7064396B2 (en) * | 2004-03-01 | 2006-06-20 | Freescale Semiconductor, Inc. | Integrated circuit with multiple spacer insulating region widths |
US6995456B2 (en) | 2004-03-12 | 2006-02-07 | International Business Machines Corporation | High-performance CMOS SOI devices on hybrid crystal-oriented substrates |
JP2005286341A (ja) | 2004-03-30 | 2005-10-13 | Samsung Electronics Co Ltd | 低ノイズ及び高性能のlsi素子、レイアウト及びその製造方法 |
KR101025761B1 (ko) * | 2004-03-30 | 2011-04-04 | 삼성전자주식회사 | 디지탈 회로 및 아날로그 회로를 가지는 반도체 집적회로및 그 제조 방법 |
JP4504727B2 (ja) * | 2004-04-21 | 2010-07-14 | ローム株式会社 | 半導体装置及びその製造方法 |
US7053400B2 (en) * | 2004-05-05 | 2006-05-30 | Advanced Micro Devices, Inc. | Semiconductor device based on Si-Ge with high stress liner for enhanced channel carrier mobility |
DE102005005327A1 (de) * | 2004-05-17 | 2005-12-15 | Infineon Technologies Ag | Feldefekttansistor, Transistoranordnung sowie Verfahren zur Herstellung eines halbleitenden einkristallinen Substrats und einer Transistoranordnung |
WO2005119760A1 (en) * | 2004-05-28 | 2005-12-15 | Advanced Micro Devices, Inc. | Technique for creating different mechanical stress in different channel regions by forming an etch stop layer having differently modified intrinsic stress |
KR101134157B1 (ko) * | 2004-05-28 | 2012-04-09 | 어드밴스드 마이크로 디바이시즈, 인코포레이티드 | 차등적으로 변형된 진성 응력을 가지는 식각 정지층을 형성함으로써 차등 채널 영역들 내에 차등적인 기계적 응력을 생성하는 기술 |
DE102004026149B4 (de) * | 2004-05-28 | 2008-06-26 | Advanced Micro Devices, Inc., Sunnyvale | Verfahren zum Erzeugen eines Halbleiterbauelements mit Transistorelementen mit spannungsinduzierenden Ätzstoppschichten |
JP4700295B2 (ja) | 2004-06-08 | 2011-06-15 | 富士通セミコンダクター株式会社 | 半導体装置とその製造方法 |
JP4994581B2 (ja) | 2004-06-29 | 2012-08-08 | 富士通セミコンダクター株式会社 | 半導体装置 |
DE102004031710B4 (de) * | 2004-06-30 | 2007-12-27 | Advanced Micro Devices, Inc., Sunnyvale | Verfahren zum Herstellen unterschiedlich verformter Halbleitergebiete und Transistorpaar in unterschiedlich verformten Halbleitergebieten |
US8669145B2 (en) * | 2004-06-30 | 2014-03-11 | International Business Machines Corporation | Method and structure for strained FinFET devices |
JP4876375B2 (ja) * | 2004-07-06 | 2012-02-15 | ソニー株式会社 | 半導体装置およびその製造方法 |
JP4444027B2 (ja) * | 2004-07-08 | 2010-03-31 | 富士通マイクロエレクトロニクス株式会社 | nチャネルMOSトランジスタおよびCMOS集積回路装置 |
JP4590979B2 (ja) * | 2004-08-24 | 2010-12-01 | パナソニック株式会社 | 半導体装置及びその製造方法 |
JP5122818B2 (ja) * | 2004-09-17 | 2013-01-16 | シャープ株式会社 | 薄膜半導体装置の製造方法 |
US7371630B2 (en) * | 2004-09-24 | 2008-05-13 | Intel Corporation | Patterned backside stress engineering for transistor performance optimization |
US7098536B2 (en) * | 2004-10-21 | 2006-08-29 | International Business Machines Corporation | Structure for strained channel field effect transistor pair having a member and a contact via |
DE102004052578B4 (de) * | 2004-10-29 | 2009-11-26 | Advanced Micro Devices, Inc., Sunnyvale | Verfahren zum Erzeugen einer unterschiedlichen mechanischen Verformung in unterschiedlichen Kanalgebieten durch Bilden eines Ätzstoppschichtstapels mit unterschiedlich modifizierter innerer Spannung |
WO2006049834A1 (en) * | 2004-10-29 | 2006-05-11 | Advanced Micro Devices, Inc. | A semiconductor device including semiconductor regions having differently strained channel regions and a method of manufacturing the same |
US7265425B2 (en) * | 2004-11-15 | 2007-09-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device employing an extension spacer and a method of forming the same |
US7348635B2 (en) * | 2004-12-10 | 2008-03-25 | International Business Machines Corporation | Device having enhanced stress state and related methods |
US7262087B2 (en) * | 2004-12-14 | 2007-08-28 | International Business Machines Corporation | Dual stressed SOI substrates |
JP4833544B2 (ja) * | 2004-12-17 | 2011-12-07 | パナソニック株式会社 | 半導体装置 |
KR100702006B1 (ko) * | 2005-01-03 | 2007-03-30 | 삼성전자주식회사 | 개선된 캐리어 이동도를 갖는 반도체 소자의 제조방법 |
US7271442B2 (en) * | 2005-01-12 | 2007-09-18 | International Business Machines Corporation | Transistor structure having stressed regions of opposite types underlying channel and source/drain regions |
US7432553B2 (en) * | 2005-01-19 | 2008-10-07 | International Business Machines Corporation | Structure and method to optimize strain in CMOSFETs |
JP4372024B2 (ja) * | 2005-02-14 | 2009-11-25 | 株式会社東芝 | Cmos半導体装置 |
JP4369379B2 (ja) | 2005-02-18 | 2009-11-18 | 富士通マイクロエレクトロニクス株式会社 | 半導体装置 |
US7164163B2 (en) * | 2005-02-22 | 2007-01-16 | Taiwan Semiconductor Manufacturing Company, Ltd. | Strained transistor with hybrid-strain inducing layer |
JP4361886B2 (ja) * | 2005-02-24 | 2009-11-11 | 富士通マイクロエレクトロニクス株式会社 | 半導体集積回路装置およびその製造方法 |
WO2006092848A1 (ja) * | 2005-03-01 | 2006-09-08 | Fujitsu Limited | 半導体装置及びその製造方法 |
JP4982958B2 (ja) * | 2005-03-24 | 2012-07-25 | 富士通セミコンダクター株式会社 | 半導体装置とその製造方法 |
US7282402B2 (en) * | 2005-03-30 | 2007-10-16 | Freescale Semiconductor, Inc. | Method of making a dual strained channel semiconductor device |
US7585704B2 (en) * | 2005-04-01 | 2009-09-08 | International Business Machines Corporation | Method of producing highly strained PECVD silicon nitride thin films at low temperature |
US7545004B2 (en) * | 2005-04-12 | 2009-06-09 | International Business Machines Corporation | Method and structure for forming strained devices |
US20060226453A1 (en) * | 2005-04-12 | 2006-10-12 | Wang Everett X | Methods of forming stress enhanced PMOS structures |
DE102005020133B4 (de) * | 2005-04-29 | 2012-03-29 | Advanced Micro Devices, Inc. | Verfahren zur Herstellung eines Transistorelements mit Technik zur Herstellung einer Kontaktisolationsschicht mit verbesserter Spannungsübertragungseffizienz |
US7442598B2 (en) * | 2005-06-09 | 2008-10-28 | Freescale Semiconductor, Inc. | Method of forming an interlayer dielectric |
US7528028B2 (en) * | 2005-06-17 | 2009-05-05 | Taiwan Semiconductor Manufacturing Company, Ltd. | Super anneal for process induced strain modulation |
WO2007005136A1 (en) * | 2005-06-30 | 2007-01-11 | Advanced Micro Devices, Inc. | Technique for forming contact insulation layers silicide regions with different characteristics |
DE102005030583B4 (de) * | 2005-06-30 | 2010-09-30 | Advanced Micro Devices, Inc., Sunnyvale | Verfahren zur Herstellung von Kontaktisolationsschichten und Silizidgebieten mit unterschiedlichen Eigenschaften eines Halbleiterbauelements und Halbleiterbauelement |
GB2442174B (en) * | 2005-06-30 | 2008-11-12 | Advanced Micro Devices Inc | Technique for forming contact insulation layers and silicide regions with different characteristics |
US20070023795A1 (en) * | 2005-07-15 | 2007-02-01 | Kabushiki Kaisha Toshiba | Semiconductor device and method of fabricating the same |
JP2007049092A (ja) * | 2005-08-12 | 2007-02-22 | Toshiba Corp | Mos型半導体装置 |
US7378318B2 (en) * | 2005-08-18 | 2008-05-27 | International Business Machines Corporation | System and method for ensuring migratability of circuits by masking portions of the circuits while improving performance of other portions of the circuits |
US7514752B2 (en) * | 2005-08-26 | 2009-04-07 | Toshiba America Electronic Components, Inc. | Reduction of short-circuiting between contacts at or near a tensile-compressive boundary |
JP2007073800A (ja) * | 2005-09-08 | 2007-03-22 | Seiko Epson Corp | 半導体装置 |
JP4880958B2 (ja) * | 2005-09-16 | 2012-02-22 | 株式会社東芝 | 半導体装置及びその製造方法 |
JP5109660B2 (ja) * | 2005-09-21 | 2012-12-26 | 日本電気株式会社 | 半導体装置 |
JP4618068B2 (ja) * | 2005-09-21 | 2011-01-26 | ソニー株式会社 | 半導体装置 |
TWI267926B (en) * | 2005-09-23 | 2006-12-01 | Ind Tech Res Inst | A new method for high mobility enhancement strained channel CMOS with single workfunction metal-gate |
US7651935B2 (en) * | 2005-09-27 | 2010-01-26 | Freescale Semiconductor, Inc. | Process of forming an electronic device including active regions and gate electrodes of different compositions overlying the active regions |
DE102005046974B3 (de) * | 2005-09-30 | 2007-04-05 | Advanced Micro Devices, Inc., Sunnyvale | Verfahren zum Erzeugen einer unterschiedlichen mechanischen Formung in unterschiedlichen Substratgebieten durch bilden einer Schicht mit verschieden modifizierter innerer Spannung und mit dem Verfahren hergestelltes Bauteil |
JP4787593B2 (ja) * | 2005-10-14 | 2011-10-05 | パナソニック株式会社 | 半導体装置 |
JP4829591B2 (ja) * | 2005-10-25 | 2011-12-07 | パナソニック株式会社 | 半導体装置及びその製造方法 |
US7504289B2 (en) * | 2005-10-26 | 2009-03-17 | Freescale Semiconductor, Inc. | Process for forming an electronic device including transistor structures with sidewall spacers |
US7615432B2 (en) * | 2005-11-02 | 2009-11-10 | Samsung Electronics Co., Ltd. | HDP/PECVD methods of fabricating stress nitride structures for field effect transistors |
US7420202B2 (en) * | 2005-11-08 | 2008-09-02 | Freescale Semiconductor, Inc. | Electronic device including a transistor structure having an active region adjacent to a stressor layer and a process for forming the electronic device |
JP2007134577A (ja) * | 2005-11-11 | 2007-05-31 | Toshiba Corp | 半導体装置 |
JP2007141903A (ja) * | 2005-11-15 | 2007-06-07 | Renesas Technology Corp | 半導体装置およびその製造方法 |
JP5032018B2 (ja) * | 2005-11-18 | 2012-09-26 | アプライド マテリアルズ インコーポレイテッド | 膜形成方法 |
JP4963175B2 (ja) * | 2005-11-21 | 2012-06-27 | 株式会社半導体エネルギー研究所 | 半導体装置の製造方法、半導体装置、及び電子機器 |
JP2007157924A (ja) * | 2005-12-02 | 2007-06-21 | Fujitsu Ltd | 半導体装置および半導体装置の製造方法 |
US20070141775A1 (en) * | 2005-12-15 | 2007-06-21 | Chartered Semiconductor Manufacturing, Ltd. | Modulation of stress in stress film through ion implantation and its application in stress memorization technique |
JP5091403B2 (ja) * | 2005-12-15 | 2012-12-05 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
US8153537B1 (en) | 2005-12-15 | 2012-04-10 | Globalfoundries Singapore Pte. Ltd. | Method for fabricating semiconductor devices using stress engineering |
JP4764160B2 (ja) * | 2005-12-21 | 2011-08-31 | 株式会社東芝 | 半導体装置 |
WO2007077748A1 (ja) * | 2005-12-27 | 2007-07-12 | Nec Corporation | 半導体装置および半導体装置の製造方法 |
US7579655B2 (en) * | 2006-01-09 | 2009-08-25 | International Business Machines Corporation | Transistor structure having interconnect to side of diffusion and related method |
JP2007200961A (ja) * | 2006-01-24 | 2007-08-09 | Sharp Corp | 半導体装置およびその製造方法 |
JP5092754B2 (ja) | 2006-02-08 | 2012-12-05 | 富士通セミコンダクター株式会社 | pチャネルMOSトランジスタおよび半導体装置 |
KR100714479B1 (ko) | 2006-02-13 | 2007-05-04 | 삼성전자주식회사 | 반도체 집적 회로 장치 및 그 제조 방법 |
WO2007122667A1 (ja) * | 2006-03-29 | 2007-11-01 | Fujitsu Limited | 半導体装置及びその製造方法 |
US20070249129A1 (en) * | 2006-04-21 | 2007-10-25 | Freescale Semiconductor, Inc. | STI stressor integration for minimal phosphoric exposure and divot-free topography |
US7528029B2 (en) | 2006-04-21 | 2009-05-05 | Freescale Semiconductor, Inc. | Stressor integration and method thereof |
US7521307B2 (en) * | 2006-04-28 | 2009-04-21 | International Business Machines Corporation | CMOS structures and methods using self-aligned dual stressed layers |
JP2007311491A (ja) * | 2006-05-17 | 2007-11-29 | Toshiba Corp | 半導体集積回路 |
US20070281405A1 (en) * | 2006-06-02 | 2007-12-06 | International Business Machines Corporation | Methods of stressing transistor channel with replaced gate and related structures |
JP5182703B2 (ja) | 2006-06-08 | 2013-04-17 | 日本電気株式会社 | 半導体装置 |
WO2008041301A1 (fr) * | 2006-09-29 | 2008-04-10 | Fujitsu Microelectronics Limited | DISPOSITIF SEMI-CONDUCTEUR ET Son procÉDÉ de FABRICATION |
US20080083955A1 (en) * | 2006-10-04 | 2008-04-10 | Kanarsky Thomas S | Intrinsically stressed liner and fabrication methods thereof |
JP5092340B2 (ja) * | 2006-10-12 | 2012-12-05 | 富士通セミコンダクター株式会社 | 半導体装置及びその製造方法 |
US7585773B2 (en) * | 2006-11-03 | 2009-09-08 | International Business Machines Corporation | Non-conformal stress liner for enhanced MOSFET performance |
US20080142897A1 (en) * | 2006-12-19 | 2008-06-19 | Chartered Semiconductor Manufacturing Ltd. | Integrated circuit system having strained transistor |
US8569858B2 (en) | 2006-12-20 | 2013-10-29 | Freescale Semiconductor, Inc. | Semiconductor device including an active region and two layers having different stress characteristics |
US20080169510A1 (en) * | 2007-01-17 | 2008-07-17 | International Business Machines Corporation | Performance enhancement on both nmosfet and pmosfet using self-aligned dual stressed films |
US7843011B2 (en) * | 2007-01-31 | 2010-11-30 | Freescale Semiconductor, Inc. | Electronic device including insulating layers having different strains |
US20100019325A1 (en) * | 2007-03-05 | 2010-01-28 | Hidetatsu Nakamura | Semiconductor device |
US20080217700A1 (en) * | 2007-03-11 | 2008-09-11 | Doris Bruce B | Mobility Enhanced FET Devices |
WO2008114392A1 (ja) * | 2007-03-19 | 2008-09-25 | Fujitsu Microelectronics Limited | 半導体装置及びその製造方法 |
JPWO2008117430A1 (ja) * | 2007-03-27 | 2010-07-08 | 富士通マイクロエレクトロニクス株式会社 | 半導体装置の製造方法、半導体装置 |
JP5310543B2 (ja) * | 2007-03-27 | 2013-10-09 | 富士通セミコンダクター株式会社 | 半導体装置の製造方法 |
JP5206668B2 (ja) * | 2007-03-28 | 2013-06-12 | 富士通セミコンダクター株式会社 | 半導体装置の製造方法 |
US20110241212A1 (en) * | 2007-04-03 | 2011-10-06 | United Microelectronics Corp. | Stress layer structure |
US20080246061A1 (en) * | 2007-04-03 | 2008-10-09 | United Microelectronics Corp. | Stress layer structure |
JP5168274B2 (ja) | 2007-05-14 | 2013-03-21 | 富士通セミコンダクター株式会社 | 半導体装置の製造方法 |
DE102007030058B3 (de) * | 2007-06-29 | 2008-12-24 | Advanced Micro Devices, Inc., Sunnyvale | Technik zur Herstellung eines dielektrischen Zwischenschichtmaterials mit erhöhter Zuverlässigkeit über einer Struktur, die dichtliegende Leitungen aufweist |
JP2009038103A (ja) * | 2007-07-31 | 2009-02-19 | Fujitsu Microelectronics Ltd | 半導体装置の製造方法と半導体装置 |
US7880243B2 (en) * | 2007-08-07 | 2011-02-01 | International Business Machines Corporation | Simple low power circuit structure with metal gate and high-k dielectric |
JP5347250B2 (ja) * | 2007-08-20 | 2013-11-20 | 富士通セミコンダクター株式会社 | 半導体装置及びその製造方法 |
JP2009088069A (ja) * | 2007-09-28 | 2009-04-23 | Panasonic Corp | 半導体装置及びその製造方法 |
JP5194743B2 (ja) * | 2007-11-27 | 2013-05-08 | 富士通セミコンダクター株式会社 | 半導体装置の製造方法 |
JP2009164217A (ja) * | 2007-12-28 | 2009-07-23 | Seiko Epson Corp | 半導体装置の製造方法及び半導体装置 |
JP5285287B2 (ja) * | 2008-02-01 | 2013-09-11 | ローム株式会社 | 半導体装置の製造方法 |
JP5268385B2 (ja) * | 2008-02-13 | 2013-08-21 | パナソニック株式会社 | 半導体装置 |
US7727834B2 (en) * | 2008-02-14 | 2010-06-01 | Toshiba America Electronic Components, Inc. | Contact configuration and method in dual-stress liner semiconductor device |
JP2009200155A (ja) * | 2008-02-20 | 2009-09-03 | Nec Electronics Corp | 半導体装置及びその製造方法 |
US20090215277A1 (en) * | 2008-02-26 | 2009-08-27 | Tung-Hsing Lee | Dual contact etch stop layer process |
JP5310722B2 (ja) | 2008-06-26 | 2013-10-09 | 富士通セミコンダクター株式会社 | 半導体装置の製造方法 |
JP5163311B2 (ja) | 2008-06-26 | 2013-03-13 | 富士通セミコンダクター株式会社 | 半導体装置及びその製造方法 |
JP2010073985A (ja) * | 2008-09-19 | 2010-04-02 | Toshiba Corp | 半導体装置 |
US20100090256A1 (en) * | 2008-10-10 | 2010-04-15 | Hung-Wei Chen | Semiconductor structure with stress regions |
DE102008059498B4 (de) * | 2008-11-28 | 2012-12-06 | Globalfoundries Dresden Module One Limited Liability Company & Co. Kg | Verfahren zur Beschränkung von Verspannungsschichten, die in der Kontaktebene eines Halbleiterbauelements gebildet sind |
JP5465907B2 (ja) | 2009-03-27 | 2014-04-09 | ラピスセミコンダクタ株式会社 | 半導体装置 |
US8298876B2 (en) | 2009-03-27 | 2012-10-30 | International Business Machines Corporation | Methods for normalizing strain in semiconductor devices and strain normalized semiconductor devices |
JP4540735B2 (ja) * | 2009-03-31 | 2010-09-08 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
US8035166B2 (en) * | 2009-04-08 | 2011-10-11 | Xilinx, Inc. | Integrated circuit device with stress reduction layer |
US8236709B2 (en) * | 2009-07-29 | 2012-08-07 | International Business Machines Corporation | Method of fabricating a device using low temperature anneal processes, a device and design structure |
US8159009B2 (en) * | 2009-11-19 | 2012-04-17 | Qualcomm Incorporated | Semiconductor device having strain material |
JP5268962B2 (ja) * | 2010-02-09 | 2013-08-21 | パナソニック株式会社 | 半導体装置 |
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US9202913B2 (en) * | 2010-09-30 | 2015-12-01 | Institute of Microelectronics, Chinese Academy of Sciences | Method for manufacturing semiconductor structure |
US9041082B2 (en) * | 2010-10-07 | 2015-05-26 | International Business Machines Corporation | Engineering multiple threshold voltages in an integrated circuit |
US8426265B2 (en) * | 2010-11-03 | 2013-04-23 | International Business Machines Corporation | Method for growing strain-inducing materials in CMOS circuits in a gate first flow |
JP5448268B2 (ja) * | 2011-07-04 | 2014-03-19 | 株式会社半導体エネルギー研究所 | 半導体装置 |
US8921944B2 (en) * | 2011-07-19 | 2014-12-30 | United Microelectronics Corp. | Semiconductor device |
CN102544106B (zh) * | 2012-02-20 | 2016-01-27 | 电子科技大学 | 引入了局部应力的ldmos器件 |
JP5712984B2 (ja) * | 2012-08-27 | 2015-05-07 | ソニー株式会社 | 半導体装置 |
JP2014078547A (ja) * | 2012-10-09 | 2014-05-01 | Denso Corp | 半導体装置 |
US10043892B2 (en) * | 2016-06-13 | 2018-08-07 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for manufacturing a semiconductor device |
US9934977B1 (en) * | 2017-01-27 | 2018-04-03 | International Business Machines Corporation | Salicide bottom contacts |
JP6412181B2 (ja) * | 2017-02-22 | 2018-10-24 | 株式会社半導体エネルギー研究所 | 半導体装置 |
Family Cites Families (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0682837B2 (ja) * | 1982-09-16 | 1994-10-19 | 財団法人半導体研究振興会 | 半導体集積回路 |
JPS6052052A (ja) | 1983-08-31 | 1985-03-23 | Fujitsu Ltd | 相補型mis半導体装置 |
JP2658057B2 (ja) * | 1987-06-23 | 1997-09-30 | セイコーエプソン株式会社 | 半導体装置 |
US5234850A (en) * | 1990-09-04 | 1993-08-10 | Industrial Technology Research Institute | Method of fabricating a nitride capped MOSFET for integrated circuits |
JPH06232170A (ja) | 1993-01-29 | 1994-08-19 | Mitsubishi Electric Corp | 電界効果トランジスタ及びその製造方法 |
JPH0732122A (ja) | 1993-07-20 | 1995-02-03 | Toyota Central Res & Dev Lab Inc | 差圧鋳造方法および差圧鋳造装置 |
JPH0738103A (ja) * | 1993-07-21 | 1995-02-07 | Matsushita Electric Ind Co Ltd | 半導体装置およびその製造方法 |
JPH0766296A (ja) * | 1993-08-31 | 1995-03-10 | Toshiba Corp | Mis型半導体装置及びその製造方法 |
KR0138959B1 (ko) * | 1994-11-08 | 1998-04-30 | 김주용 | 상보형 모스 소자의 게이트 전극 형성 방법 |
JPH08288280A (ja) * | 1995-04-20 | 1996-11-01 | Mitsubishi Materials Corp | トランジスタ構造 |
TW333671B (en) * | 1996-03-25 | 1998-06-11 | Sanyo Electric Co | The semiconductor device and its producing method |
JP3469738B2 (ja) * | 1996-03-25 | 2003-11-25 | 三洋電機株式会社 | 半導体装置 |
JP3311940B2 (ja) | 1996-09-17 | 2002-08-05 | 株式会社東芝 | 半導体装置及びその製造方法 |
JP3050193B2 (ja) * | 1997-11-12 | 2000-06-12 | 日本電気株式会社 | 半導体装置及びその製造方法 |
JP4258034B2 (ja) * | 1998-05-27 | 2009-04-30 | ソニー株式会社 | 半導体装置及び半導体装置の製造方法 |
JPH11345947A (ja) * | 1998-06-02 | 1999-12-14 | Hitachi Ltd | 半導体集積回路装置およびその製造方法 |
KR100296130B1 (ko) * | 1998-06-29 | 2001-08-07 | 박종섭 | 이중막 실리콘웨이퍼를 이용한 금속-산화막-반도체 전계효과트랜지스터 제조방법 |
KR100265350B1 (ko) * | 1998-06-30 | 2000-09-15 | 김영환 | 매립절연층을 갖는 실리콘 기판에서의 반도체소자 제조방법 |
JP2000031478A (ja) * | 1998-07-13 | 2000-01-28 | Ricoh Co Ltd | 半導体装置及びその製造方法 |
JP4245692B2 (ja) * | 1998-08-11 | 2009-03-25 | シャープ株式会社 | デュアルゲートcmos型半導体装置およびその製造方法 |
JP3262090B2 (ja) * | 1998-12-08 | 2002-03-04 | 日本電気株式会社 | 相補型mos半導体装置および製造方法 |
JP3262162B2 (ja) * | 1998-12-14 | 2002-03-04 | 日本電気株式会社 | 半導体装置 |
JP2000216377A (ja) * | 1999-01-20 | 2000-08-04 | Nec Corp | 半導体装置の製造方法 |
JP2000243854A (ja) | 1999-02-22 | 2000-09-08 | Toshiba Corp | 半導体装置及びその製造方法 |
JP2001024468A (ja) | 1999-07-09 | 2001-01-26 | Toyo Commun Equip Co Ltd | 圧電振動子の電極膜構造 |
US6876053B1 (en) * | 1999-08-13 | 2005-04-05 | Intel Corporation | Isolation structure configurations for modifying stresses in semiconductor devices |
JP2001160594A (ja) | 1999-09-20 | 2001-06-12 | Toshiba Corp | 半導体装置 |
-
2001
- 2001-11-08 JP JP2001342667A patent/JP2003086708A/ja active Pending
- 2001-12-06 CN CNB018202047A patent/CN100382315C/zh not_active Expired - Lifetime
- 2001-12-06 KR KR1020037007569A patent/KR100562441B1/ko active IP Right Grant
- 2001-12-06 MY MYPI20015565A patent/MY144640A/en unknown
- 2001-12-06 WO PCT/JP2001/010692 patent/WO2002047167A1/ja active IP Right Grant
- 2001-12-06 US US10/433,786 patent/US6982465B2/en not_active Expired - Lifetime
- 2001-12-06 TW TW090130244A patent/TW518749B/zh not_active IP Right Cessation
Cited By (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7488690B2 (en) | 2004-07-06 | 2009-02-10 | Applied Materials, Inc. | Silicon nitride film with stress control |
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US7476579B2 (en) | 2005-11-15 | 2009-01-13 | International Business Machines Corporation | Method and structure for enhancing both nMOSFET and pMOSFET performance with a stressed film |
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US9449974B2 (en) | 2007-03-20 | 2016-09-20 | Sony Corporation | Semiconductor device and method of manufacturing the same |
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US11664376B2 (en) | 2007-03-20 | 2023-05-30 | Sony Group Corporation | Semiconductor device and method of manufacturing the same |
CN102184922A (zh) * | 2010-01-15 | 2011-09-14 | 英特赛尔美国股份有限公司 | 具有使用掩埋金属互连的垂直高端pmos和垂直低端nmos的单片输出级、结构和方法 |
Also Published As
Publication number | Publication date |
---|---|
KR20030082934A (ko) | 2003-10-23 |
JP2003086708A (ja) | 2003-03-20 |
WO2002047167A1 (fr) | 2002-06-13 |
KR100562441B1 (ko) | 2006-03-17 |
US20040075148A1 (en) | 2004-04-22 |
MY144640A (en) | 2011-10-31 |
CN100382315C (zh) | 2008-04-16 |
US6982465B2 (en) | 2006-01-03 |
TW518749B (en) | 2003-01-21 |
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