CN1508846A - 半导体器件及其制作方法 - Google Patents
半导体器件及其制作方法 Download PDFInfo
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- CN1508846A CN1508846A CNA2003101223935A CN200310122393A CN1508846A CN 1508846 A CN1508846 A CN 1508846A CN A2003101223935 A CNA2003101223935 A CN A2003101223935A CN 200310122393 A CN200310122393 A CN 200310122393A CN 1508846 A CN1508846 A CN 1508846A
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7842—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate
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- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
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- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66575—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate
- H01L29/6659—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate with both lightly doped source and drain extensions and source and drain self-aligned to the sides of the gate, e.g. lightly doped drain [LDD] MOSFET, double diffused drain [DDD] MOSFET
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- High Energy & Nuclear Physics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Ceramic Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Electrodes Of Semiconductors (AREA)
- Semiconductor Memories (AREA)
Abstract
Description
Claims (32)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002368298 | 2002-12-19 | ||
JP368298/2002 | 2002-12-19 | ||
JP2003306388A JP2004214607A (ja) | 2002-12-19 | 2003-08-29 | 半導体装置及びその製造方法 |
JP306388/2003 | 2003-08-29 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN 200710110127 Division CN101075582A (zh) | 2002-12-19 | 2003-12-19 | 半导体器件及其制作方法 |
Publications (2)
Publication Number | Publication Date |
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CN1508846A true CN1508846A (zh) | 2004-06-30 |
CN100365769C CN100365769C (zh) | 2008-01-30 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CNB2003101223935A Expired - Lifetime CN100365769C (zh) | 2002-12-19 | 2003-12-19 | 半导体器件及其制作方法 |
Country Status (5)
Country | Link |
---|---|
US (3) | US7087474B2 (zh) |
JP (1) | JP2004214607A (zh) |
KR (1) | KR20040054556A (zh) |
CN (1) | CN100365769C (zh) |
TW (1) | TW200419657A (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105355597A (zh) * | 2014-08-19 | 2016-02-24 | 中芯国际集成电路制造(上海)有限公司 | 利用应力记忆效应的cmos器件的制作方法 |
CN106158643A (zh) * | 2015-04-08 | 2016-11-23 | 中芯国际集成电路制造(上海)有限公司 | 晶体管的形成方法 |
CN116247007A (zh) * | 2023-05-09 | 2023-06-09 | 合肥晶合集成电路股份有限公司 | 一种半导体装置的制造方法 |
Families Citing this family (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8389370B2 (en) * | 1999-08-02 | 2013-03-05 | Schilmass Co. L.L.C. | Radiation-tolerant integrated circuit device and method for fabricating |
JP3975099B2 (ja) * | 2002-03-26 | 2007-09-12 | 富士通株式会社 | 半導体装置の製造方法 |
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-
2003
- 2003-08-29 JP JP2003306388A patent/JP2004214607A/ja active Pending
- 2003-12-16 TW TW092135542A patent/TW200419657A/zh unknown
- 2003-12-18 KR KR1020030092876A patent/KR20040054556A/ko not_active Application Discontinuation
- 2003-12-19 US US10/739,319 patent/US7087474B2/en not_active Expired - Lifetime
- 2003-12-19 CN CNB2003101223935A patent/CN100365769C/zh not_active Expired - Lifetime
-
2006
- 2006-04-27 US US11/411,892 patent/US7384834B2/en not_active Expired - Lifetime
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2008
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Cited By (6)
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CN105355597A (zh) * | 2014-08-19 | 2016-02-24 | 中芯国际集成电路制造(上海)有限公司 | 利用应力记忆效应的cmos器件的制作方法 |
CN105355597B (zh) * | 2014-08-19 | 2018-10-23 | 中芯国际集成电路制造(上海)有限公司 | 利用应力记忆效应的cmos器件的制作方法 |
CN106158643A (zh) * | 2015-04-08 | 2016-11-23 | 中芯国际集成电路制造(上海)有限公司 | 晶体管的形成方法 |
CN106158643B (zh) * | 2015-04-08 | 2019-05-28 | 中芯国际集成电路制造(上海)有限公司 | 晶体管的形成方法 |
CN116247007A (zh) * | 2023-05-09 | 2023-06-09 | 合肥晶合集成电路股份有限公司 | 一种半导体装置的制造方法 |
CN116247007B (zh) * | 2023-05-09 | 2023-09-12 | 合肥晶合集成电路股份有限公司 | 一种半导体装置的制造方法 |
Also Published As
Publication number | Publication date |
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TW200419657A (en) | 2004-10-01 |
US20060199323A1 (en) | 2006-09-07 |
KR20040054556A (ko) | 2004-06-25 |
CN100365769C (zh) | 2008-01-30 |
US7384834B2 (en) | 2008-06-10 |
US7087474B2 (en) | 2006-08-08 |
US20080242013A1 (en) | 2008-10-02 |
JP2004214607A (ja) | 2004-07-29 |
US20040132249A1 (en) | 2004-07-08 |
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