CN1132228C - 半导体集成电路装置及其制造方法 - Google Patents
半导体集成电路装置及其制造方法 Download PDFInfo
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- CN1132228C CN1132228C CN988049465A CN98804946A CN1132228C CN 1132228 C CN1132228 C CN 1132228C CN 988049465 A CN988049465 A CN 988049465A CN 98804946 A CN98804946 A CN 98804946A CN 1132228 C CN1132228 C CN 1132228C
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Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
- H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/09—Manufacture or treatment with simultaneous manufacture of the peripheral circuit region and memory cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
- H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
- H10B12/0335—Making a connection between the transistor and the capacitor, e.g. plug
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/05—Making the transistor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
- H10B12/315—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor with the capacitor higher than a bit line
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/48—Data lines or contacts therefor
- H10B12/485—Bit line contacts
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
- Y10S257/90—MOSFET type gate sidewall insulating spacer
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Non-Volatile Memory (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Description
Claims (48)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP92607/1997 | 1997-04-10 | ||
JP9260897 | 1997-04-10 | ||
JP9260797 | 1997-04-10 | ||
JP92608/1997 | 1997-04-10 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1255236A CN1255236A (zh) | 2000-05-31 |
CN1132228C true CN1132228C (zh) | 2003-12-24 |
Family
ID=26434005
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN988049465A Expired - Fee Related CN1132228C (zh) | 1997-04-10 | 1998-04-10 | 半导体集成电路装置及其制造方法 |
Country Status (6)
Country | Link |
---|---|
US (4) | US6503794B1 (zh) |
JP (2) | JP4151992B2 (zh) |
KR (1) | KR100755911B1 (zh) |
CN (1) | CN1132228C (zh) |
TW (1) | TW468273B (zh) |
WO (1) | WO1998045876A1 (zh) |
Families Citing this family (77)
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US8018058B2 (en) * | 2004-06-21 | 2011-09-13 | Besang Inc. | Semiconductor memory device |
US20050280155A1 (en) * | 2004-06-21 | 2005-12-22 | Sang-Yun Lee | Semiconductor bonding and layer transfer method |
US7633162B2 (en) * | 2004-06-21 | 2009-12-15 | Sang-Yun Lee | Electronic circuit with embedded memory |
US8058142B2 (en) * | 1996-11-04 | 2011-11-15 | Besang Inc. | Bonded semiconductor structure and method of making the same |
TW378345B (en) * | 1997-01-22 | 2000-01-01 | Hitachi Ltd | Resin package type semiconductor device and manufacturing method thereof |
TW468273B (en) | 1997-04-10 | 2001-12-11 | Hitachi Ltd | Semiconductor integrated circuit device and method for manufacturing the same |
US6838320B2 (en) * | 2000-08-02 | 2005-01-04 | Renesas Technology Corp. | Method for manufacturing a semiconductor integrated circuit device |
JP2001085625A (ja) * | 1999-09-13 | 2001-03-30 | Hitachi Ltd | 半導体集積回路装置およびその製造方法 |
JP5775018B2 (ja) * | 1999-10-13 | 2015-09-09 | ソニー株式会社 | 半導体装置 |
US6410437B1 (en) * | 2000-06-30 | 2002-06-25 | Lam Research Corporation | Method for etching dual damascene structures in organosilicate glass |
US6455363B1 (en) * | 2000-07-03 | 2002-09-24 | Lsi Logic Corporation | System to improve ser immunity and punchthrough |
US6545310B2 (en) * | 2001-04-30 | 2003-04-08 | Motorola, Inc. | Non-volatile memory with a serial transistor structure with isolated well and method of operation |
JP2003031684A (ja) * | 2001-07-11 | 2003-01-31 | Hitachi Ltd | 半導体集積回路装置およびその製造方法 |
US7294567B2 (en) * | 2002-03-11 | 2007-11-13 | Micron Technology, Inc. | Semiconductor contact device and method |
US20100133695A1 (en) * | 2003-01-12 | 2010-06-03 | Sang-Yun Lee | Electronic circuit with embedded memory |
KR100527668B1 (ko) * | 2003-03-07 | 2005-11-28 | 삼성전자주식회사 | 캐패시터-언더-비트라인 구조를 갖는 반도체 장치 및 그제조방법 |
US8071438B2 (en) * | 2003-06-24 | 2011-12-06 | Besang Inc. | Semiconductor circuit |
JP4176593B2 (ja) * | 2003-09-08 | 2008-11-05 | 株式会社東芝 | 半導体装置及びその設計方法 |
JP2005142484A (ja) * | 2003-11-10 | 2005-06-02 | Hitachi Ltd | 半導体装置および半導体装置の製造方法 |
US7957348B1 (en) * | 2004-04-21 | 2011-06-07 | Kineto Wireless, Inc. | Method and system for signaling traffic and media types within a communications network switching system |
US7158410B2 (en) * | 2004-08-27 | 2007-01-02 | Micron Technology, Inc. | Integrated DRAM-NVRAM multi-level memory |
JP2006165365A (ja) * | 2004-12-09 | 2006-06-22 | Renesas Technology Corp | 半導体装置および半導体装置の製造方法 |
US7183159B2 (en) * | 2005-01-14 | 2007-02-27 | Freescale Semiconductor, Inc. | Method of forming an integrated circuit having nanocluster devices and non-nanocluster devices |
US8367524B2 (en) * | 2005-03-29 | 2013-02-05 | Sang-Yun Lee | Three-dimensional integrated circuit structure |
US20110143506A1 (en) * | 2009-12-10 | 2011-06-16 | Sang-Yun Lee | Method for fabricating a semiconductor memory device |
KR100652793B1 (ko) * | 2005-03-31 | 2006-12-01 | 주식회사 하이닉스반도체 | 반도체 소자 제조 방법 |
JP4890838B2 (ja) * | 2005-11-17 | 2012-03-07 | ルネサスエレクトロニクス株式会社 | 半導体集積回路のレイアウト設計方法、及びレイアウト設計ツール |
JP2007329232A (ja) * | 2006-06-07 | 2007-12-20 | Matsushita Electric Ind Co Ltd | 誘電体メモリ及びその製造方法 |
US7514740B2 (en) * | 2006-07-10 | 2009-04-07 | Taiwan Semiconductor Manufacturing Company, Ltd. | Logic compatible storage device |
US7948021B2 (en) * | 2007-04-27 | 2011-05-24 | Kabushiki Kaisha Toshiba | Semiconductor memory device and method of fabricating the same |
JP2009135217A (ja) * | 2007-11-29 | 2009-06-18 | Nec Electronics Corp | 半導体装置の製造方法および半導体装置 |
US9174791B2 (en) * | 2007-12-11 | 2015-11-03 | Tokitae Llc | Temperature-stabilized storage systems |
JP2009272407A (ja) * | 2008-05-02 | 2009-11-19 | Renesas Technology Corp | 半導体装置の製造方法 |
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Also Published As
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WO1998045876A1 (fr) | 1998-10-15 |
US7081649B2 (en) | 2006-07-25 |
JP4151992B2 (ja) | 2008-09-17 |
US20020137281A1 (en) | 2002-09-26 |
TW468273B (en) | 2001-12-11 |
US6503794B1 (en) | 2003-01-07 |
KR20010005925A (ko) | 2001-01-15 |
CN1255236A (zh) | 2000-05-31 |
US6800888B2 (en) | 2004-10-05 |
US20040147077A1 (en) | 2004-07-29 |
KR100755911B1 (ko) | 2007-09-06 |
JP2008160129A (ja) | 2008-07-10 |
US6743673B2 (en) | 2004-06-01 |
US20050017274A1 (en) | 2005-01-27 |
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