JP5317483B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP5317483B2 JP5317483B2 JP2008017118A JP2008017118A JP5317483B2 JP 5317483 B2 JP5317483 B2 JP 5317483B2 JP 2008017118 A JP2008017118 A JP 2008017118A JP 2008017118 A JP2008017118 A JP 2008017118A JP 5317483 B2 JP5317483 B2 JP 5317483B2
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 123
- 239000000758 substrate Substances 0.000 claims abstract description 72
- 239000012535 impurity Substances 0.000 claims abstract description 44
- 229910052796 boron Inorganic materials 0.000 claims description 8
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 34
- 229910052717 sulfur Inorganic materials 0.000 abstract description 15
- 229910052711 selenium Inorganic materials 0.000 abstract description 8
- 229910052714 tellurium Inorganic materials 0.000 abstract description 7
- 239000012212 insulator Substances 0.000 abstract 2
- 238000005468 ion implantation Methods 0.000 description 32
- 238000000034 method Methods 0.000 description 20
- 230000007547 defect Effects 0.000 description 19
- 229910052751 metal Inorganic materials 0.000 description 11
- 239000002184 metal Substances 0.000 description 11
- 238000009792 diffusion process Methods 0.000 description 10
- 230000000694 effects Effects 0.000 description 10
- 238000010586 diagram Methods 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 238000002955 isolation Methods 0.000 description 8
- 239000011669 selenium Substances 0.000 description 8
- 229910052814 silicon oxide Inorganic materials 0.000 description 8
- 239000013078 crystal Substances 0.000 description 7
- 230000005465 channeling Effects 0.000 description 6
- 150000002500 ions Chemical class 0.000 description 6
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 5
- 229910052798 chalcogen Inorganic materials 0.000 description 5
- 239000002019 doping agent Substances 0.000 description 5
- 238000011156 evaluation Methods 0.000 description 5
- 230000002093 peripheral effect Effects 0.000 description 5
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 4
- 229910006501 ZrSiO Inorganic materials 0.000 description 4
- 230000001133 acceleration Effects 0.000 description 4
- 230000009471 action Effects 0.000 description 4
- 230000004913 activation Effects 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 238000002513 implantation Methods 0.000 description 4
- 238000001020 plasma etching Methods 0.000 description 4
- 238000004088 simulation Methods 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 239000011593 sulfur Substances 0.000 description 4
- 229910006137 NiGe Inorganic materials 0.000 description 3
- 238000000137 annealing Methods 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 229910052732 germanium Inorganic materials 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- GFQYVLUOOAAOGM-UHFFFAOYSA-N zirconium(iv) silicate Chemical compound [Zr+4].[O-][Si]([O-])([O-])[O-] GFQYVLUOOAAOGM-UHFFFAOYSA-N 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 238000000342 Monte Carlo simulation Methods 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 238000004364 calculation method Methods 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 239000000523 sample Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 240000006829 Ficus sundaica Species 0.000 description 1
- 229910021193 La 2 O 3 Inorganic materials 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- 229910008045 Si-Si Inorganic materials 0.000 description 1
- 229910006411 Si—Si Inorganic materials 0.000 description 1
- 229910002367 SrTiO Inorganic materials 0.000 description 1
- -1 Ta 2 O 5 Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
- 238000003949 trap density measurement Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/107—Substrate region of field-effect devices
- H01L29/1075—Substrate region of field-effect devices of field-effect transistors
- H01L29/1079—Substrate region of field-effect devices of field-effect transistors with insulated gate
- H01L29/1083—Substrate region of field-effect devices of field-effect transistors with insulated gate with an inactive supplementary region, e.g. for preventing punch-through, improving capacity effect or leakage current
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28255—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor belonging to Group IV and not being elemental silicon, e.g. Ge, SiGe, SiGeC
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
Description
K.Ikeda,Y.Yamashita,N.Sugiyama,N.Taoka and S.Takagi,Applied Physics Letters,88,152115 (2006)
本発明の第1の実施の形態の半導体装置は、Geを含有する半導体基板中に形成されたチャネル領域と、このチャネル領域表面に形成されたゲート絶縁膜と、ゲート絶縁膜上に形成されたゲート電極と、チャネル領域の両側に形成されたソース/ドレイン不純物層を備えるMISFETを有している。そして、ソース/ドレイン不純物層が、Geを含有する半導体基板中に形成されている。そして、ソース/ドレイン不純物層の接合深さよりも深い半導体領域に、S(硫黄)、Se(セレン)、Te(テルル)から選択される少なくとも一種の元素が含有されることを特徴とする。
本発明の第2の実施の形態の半導体装置は、ゲート絶縁膜直下のチャネル領域の一部において、S、Se、Teの濃度が、1×1019atoms/cm3以下であること以外は、基本的に第1の実施の形態の半導体装置と同様である。したがって、重複する内容については記述を省略する。
本発明の第3の実施の形態の半導体装置は、チャネル領域のゲート絶縁膜直下の、全領域において、S、Se、Teの濃度が、1×1019atoms/cm3以下であること以外は、基本的に第2の実施の形態の半導体装置と同様である。したがって、重複する内容については記述を省略する。
本発明の第4の実施の形態の半導体装置は、チャネル領域のゲート絶縁膜直下の、全領域において、S、Se、Teの濃度が、1×1019atoms/cm3以下であること以外は、基本的に第1の実施の形態の半導体装置と同様である。したがって、重複する内容については記述を省略する。
本発明の第5の実施の形態の半導体装置は、半導体基板がSi基板であり、チャネル領域がSiで、ソース/ドレイン領域のみにGeを含有する半導体領域が形成されていることを特徴とする。それ以外は、基本的に第3の実施の形態の半導体装置と同様であるので重複する記載を省略する。
本発明の第6の実施の形態の半導体装置は、pMISFETとnMISFETを備えるCMIS構造を有している。そして、pMISFETにのみ本発明が適用されることを特徴とする。
102 素子分離領域
104 チャネル領域
106 ゲート絶縁膜
108 ゲート電極
110 ゲート側壁絶縁膜
112 ソース/ドレイン不純物層
114 Sが含有される領域
150 Ge半導体領域
200 Si基板
300 pMISFET
400 nMISFET
Claims (1)
- 半導体基板中に形成されたチャネル領域と、
前記チャネル領域表面に形成されたゲート絶縁膜と、
前記ゲート絶縁膜上に形成されたゲート電極と、
前記チャネル領域の両側に形成されたボロン(B)を不純物として含有するソース/ドレイン不純物層を具備するpMISFETを有し、
前記ソース/ドレイン不純物層の両方の、少なくとも一部が、前記半導体基板中の、Geを含有するn型半導体領域に形成され、
前記ソース/ドレイン不純物層の両方の、接合深さよりも深い前記n型半導体領域に、Sが含有され、
前記ゲート絶縁膜直下の前記チャネル領域の、少なくとも一部領域において、Sの濃度が、1×1019atoms/cm3以下であり、
前記ソース/ドレイン不純物層の両方の、接合深さよりも深い前記n型半導体領域において、Sの濃度が、1×1016atoms/cm3以上であり、
前記チャネル領域が、Geを含有し、
前記n型半導体領域のGe濃度が87%以上であることを特徴とする半導体装置。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008017118A JP5317483B2 (ja) | 2008-01-29 | 2008-01-29 | 半導体装置 |
US12/353,330 US8575652B2 (en) | 2008-01-29 | 2009-01-14 | Semiconductor device and manufacturing method thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008017118A JP5317483B2 (ja) | 2008-01-29 | 2008-01-29 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
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JP2009181977A JP2009181977A (ja) | 2009-08-13 |
JP5317483B2 true JP5317483B2 (ja) | 2013-10-16 |
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JP2008017118A Expired - Fee Related JP5317483B2 (ja) | 2008-01-29 | 2008-01-29 | 半導体装置 |
Country Status (2)
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US (1) | US8575652B2 (ja) |
JP (1) | JP5317483B2 (ja) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2010098153A1 (ja) * | 2009-02-27 | 2010-09-02 | 富士通株式会社 | イオン注入分布発生方法及びシミュレータ |
JP2010267713A (ja) * | 2009-05-13 | 2010-11-25 | Panasonic Corp | 半導体装置及びその製造方法 |
US8901537B2 (en) | 2010-12-21 | 2014-12-02 | Intel Corporation | Transistors with high concentration of boron doped germanium |
US9484432B2 (en) | 2010-12-21 | 2016-11-01 | Intel Corporation | Contact resistance reduction employing germanium overlayer pre-contact metalization |
JP5330433B2 (ja) | 2011-03-11 | 2013-10-30 | 株式会社東芝 | 半導体装置および半導体装置の製造方法 |
JP2013143487A (ja) * | 2012-01-11 | 2013-07-22 | National Institute Of Advanced Industrial & Technology | 半導体装置及びその製造方法 |
US8710490B2 (en) * | 2012-09-27 | 2014-04-29 | Intel Corporation | Semiconductor device having germanium active layer with underlying parasitic leakage barrier layer |
US20150294868A1 (en) * | 2014-04-15 | 2015-10-15 | Infineon Technologies Ag | Method of Manufacturing Semiconductor Devices Containing Chalcogen Atoms |
US10833175B2 (en) * | 2015-06-04 | 2020-11-10 | International Business Machines Corporation | Formation of dislocation-free SiGe finFET using porous silicon |
JP2017139312A (ja) * | 2016-02-03 | 2017-08-10 | 株式会社Screenホールディングス | 接合形成方法 |
JP2018029128A (ja) * | 2016-08-18 | 2018-02-22 | 株式会社Screenホールディングス | ドーパント導入方法 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH01105548A (ja) * | 1987-10-19 | 1989-04-24 | Fujitsu Ltd | Mis型電界効果トランジスタ |
JPH08139198A (ja) * | 1994-11-11 | 1996-05-31 | Seiko Epson Corp | 半導体装置 |
JP3211773B2 (ja) * | 1998-06-26 | 2001-09-25 | 日本電気株式会社 | 半導体装置およびその製造方法 |
JP2004214607A (ja) * | 2002-12-19 | 2004-07-29 | Renesas Technology Corp | 半導体装置及びその製造方法 |
JP2004273551A (ja) * | 2003-03-05 | 2004-09-30 | Renesas Technology Corp | 半導体集積回路装置およびその製造方法 |
US20080121932A1 (en) * | 2006-09-18 | 2008-05-29 | Pushkar Ranade | Active regions with compatible dielectric layers |
JP4940682B2 (ja) * | 2005-09-09 | 2012-05-30 | 富士通セミコンダクター株式会社 | 電界効果トランジスタおよびその製造方法 |
-
2008
- 2008-01-29 JP JP2008017118A patent/JP5317483B2/ja not_active Expired - Fee Related
-
2009
- 2009-01-14 US US12/353,330 patent/US8575652B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
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US8575652B2 (en) | 2013-11-05 |
JP2009181977A (ja) | 2009-08-13 |
US20090189189A1 (en) | 2009-07-30 |
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