JP5475807B2 - 半導体装置及びその製造方法 - Google Patents
半導体装置及びその製造方法 Download PDFInfo
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- JP5475807B2 JP5475807B2 JP2011550716A JP2011550716A JP5475807B2 JP 5475807 B2 JP5475807 B2 JP 5475807B2 JP 2011550716 A JP2011550716 A JP 2011550716A JP 2011550716 A JP2011550716 A JP 2011550716A JP 5475807 B2 JP5475807 B2 JP 5475807B2
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- insulating film
- semiconductor substrate
- lanthanum aluminate
- gate electrode
- element selected
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- 239000004065 semiconductor Substances 0.000 title claims description 133
- 238000004519 manufacturing process Methods 0.000 title claims description 17
- 229910052746 lanthanum Inorganic materials 0.000 claims description 86
- -1 lanthanum aluminate Chemical class 0.000 claims description 79
- 239000000758 substrate Substances 0.000 claims description 68
- 229910052719 titanium Inorganic materials 0.000 claims description 53
- 229910052710 silicon Inorganic materials 0.000 claims description 48
- 229910052757 nitrogen Inorganic materials 0.000 claims description 43
- 229910052735 hafnium Inorganic materials 0.000 claims description 31
- 238000010438 heat treatment Methods 0.000 claims description 31
- 229910052726 zirconium Inorganic materials 0.000 claims description 29
- 229910052791 calcium Inorganic materials 0.000 claims description 25
- 229910052749 magnesium Inorganic materials 0.000 claims description 25
- 229910052712 strontium Inorganic materials 0.000 claims description 25
- 229910052732 germanium Inorganic materials 0.000 claims description 22
- 229910052788 barium Inorganic materials 0.000 claims description 20
- 229910052751 metal Inorganic materials 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 10
- 239000012299 nitrogen atmosphere Substances 0.000 claims description 7
- 238000009826 distribution Methods 0.000 claims description 4
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims description 3
- 150000004767 nitrides Chemical class 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 36
- 238000010586 diagram Methods 0.000 description 26
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 25
- 239000000370 acceptor Substances 0.000 description 21
- 229910052760 oxygen Inorganic materials 0.000 description 13
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 12
- 238000000034 method Methods 0.000 description 11
- 229910004298 SiO 2 Inorganic materials 0.000 description 10
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 10
- 229910052782 aluminium Inorganic materials 0.000 description 9
- 238000000682 scanning probe acoustic microscopy Methods 0.000 description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 239000003990 capacitor Substances 0.000 description 8
- 239000012535 impurity Substances 0.000 description 8
- 238000005259 measurement Methods 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 238000004544 sputter deposition Methods 0.000 description 8
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 7
- 230000006870 function Effects 0.000 description 7
- 239000001301 oxygen Substances 0.000 description 7
- 229910021193 La 2 O 3 Inorganic materials 0.000 description 6
- 230000007547 defect Effects 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 6
- 239000012212 insulator Substances 0.000 description 6
- 238000002955 isolation Methods 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 238000004458 analytical method Methods 0.000 description 4
- 238000004364 calculation method Methods 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 150000002603 lanthanum Chemical class 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 4
- 229910052706 scandium Inorganic materials 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 3
- 239000000654 additive Substances 0.000 description 3
- 238000002425 crystallisation Methods 0.000 description 3
- 230000008025 crystallization Effects 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 238000001228 spectrum Methods 0.000 description 3
- 229910052727 yttrium Inorganic materials 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 238000003917 TEM image Methods 0.000 description 2
- 229910011208 Ti—N Inorganic materials 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010292 electrical insulation Methods 0.000 description 2
- 229910021389 graphene Inorganic materials 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- 229920000620 organic polymer Polymers 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- 229910000673 Indium arsenide Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910010037 TiAlN Inorganic materials 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 238000003795 desorption Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 238000004599 local-density approximation Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- SLIUAWYAILUBJU-UHFFFAOYSA-N pentacene Chemical compound C1=CC=CC2=CC3=CC4=CC5=CC=CC=C5C=C4C=C3C=C21 SLIUAWYAILUBJU-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- 230000001502 supplementing effect Effects 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- 239000012224 working solution Substances 0.000 description 1
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- H—ELECTRICITY
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- H01L29/76—Unipolar devices, e.g. field effect transistors
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- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
- H01L21/02178—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing aluminium, e.g. Al2O3
-
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- H01L21/02107—Forming insulating materials on a substrate
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- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
- H01L21/02192—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing at least one rare earth metal element, e.g. oxides of lanthanides, scandium or yttrium
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- H01L21/02107—Forming insulating materials on a substrate
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- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
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- H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
- H01L21/02194—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing more than one metal element
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- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
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- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28158—Making the insulator
- H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
- H01L21/28194—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation by deposition, e.g. evaporation, ALD, CVD, sputtering, laser deposition
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- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823821—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of transistors with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
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- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823828—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes
- H01L21/823842—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes gate conductors with different gate conductor materials or different gate conductor implants, e.g. dual gate structures
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- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823857—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate insulating layers, e.g. different gate insulating layer thicknesses, particular gate insulator materials or particular gate insulator implants
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- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/517—Insulating materials associated therewith the insulating material comprising a metallic compound, e.g. metal oxide, metal silicate
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- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
- H01L29/7881—Programmable transistors with only two possible levels of programmation
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Description
本発明の第1の実施形態に係わる半導体装置10について説明する。本実施形態に係わる半導体装置10は、MISFET(Metal Insulator Semiconductor Field Effect Transistor)構造を想定している。
[M]=(元素Mの個数)×(元素Mを添加した後の絶縁膜30の電子状態の絶対値)…(式1)と定義する。
[Ti]+[Hf]+[Zr]=[Si]+[Ge]+[Mg]+[Ca]+[Sr]+[Ba]+[N]…(式2)
のような、式2の関係が成り立つと考えられる。式2では、左辺はドナーとして働く元素の総数、右辺はアクセプターとして働く元素の総数を示していることになる。
第1の実施形態で説明した半導体装置10を構成する絶縁膜30の特性を、AES(Auger Electron Spectroscopy)、TEM(Transmission Electron Microscope)像観察、C−V特性、リーク電流−ゲート電圧特性、C−V特性の温度依存性、及びXPSにより評価した。
図10Aに示すように、Siからなる半導体基板20上に、SiO2からなるトンネル絶縁膜100、ポリシリコンからなるフローティングゲート、LaAlO3を含む絶縁膜30、ポリシリコンからなるゲート電極40を順に形成し、高性能キャパシタを作製した。
図10Cに示すように、Siからなる半導体基板20上に、TiAlNバッファーからなる電極層120を介して、LaAlO3を含む絶縁膜30、TiNからなる電極層110を形成して、1050℃にて熱処理を行うことで、MIMキャパシタを作製した。
図10Bに示すように、Siからなる半導体基板20上に、SiO2からなるトンネル絶縁膜100、シリコンリッチなシリコン窒化物からなる電荷蓄積膜95、LaAlO3を含む絶縁膜30、TiNからなる40ゲート電極を順に形成し、メモリセルを作製した。
Claims (9)
- 半導体基板と、
前記半導体基板内に離間して形成されたソース・ドレイン領域と、
前記ソース領域と前記ドレイン領域との間であって、前記半導体基板上に形成された、Si、Ge、Mg、Ca、Sr、Ba、及びNから選択される少なくとも1つの元素、並びにTi、Hf、及びZrから選択される少なくとも1つの元素を含むランタンアルミネートを有する絶縁膜と、
前記絶縁膜上に形成されたゲート電極と、
を備え、前記絶縁膜に含まれる、Si、Ge、Mg、Ca、Sr、Ba、及びNと、Ti、Hf、及びZrとの差が0.32原子%以下である半導体装置。 - 半導体基板と、
前記半導体基板内に離間して形成されたソース・ドレイン領域と、
前記ソース領域と前記ドレイン領域との間であって、前記半導体基板上に形成された、Si、Ge、Mg、Ca、Sr、Ba、及びNから選択される少なくとも1つの元素、並びにTi、Hf、及びZrから選択される少なくとも1つの元素を含むランタンアルミネートを有する絶縁膜と、
前記絶縁膜上に形成されたゲート電極と、
を備え、前記絶縁膜に含まれるNの濃度分布が前記半導体基板側でピークを有する半導体装置。 - 半導体基板と、
前記半導体基板内に離間して形成されたソース・ドレイン領域と、
前記ソース領域と前記ドレイン領域との間であって、前記半導体基板上に形成された、Si、Ge、Mg、Ca、Sr、Ba、及びNから選択される少なくとも1つの元素、並びにTi、Hf、及びZrから選択される少なくとも1つの元素を含むランタンアルミネートを有する絶縁膜と、
前記絶縁膜上に形成されたゲート電極と、
を備え、前記絶縁膜に含まれるN濃度の極大値は5原子%以上25原子%以下であり、 前記絶縁膜がSi、Ge、Mg、Ca、Sr、Baの何れか1つを少なくとも含み、これらの元素の濃度の極大値は5原子%以上であり、かつLaの濃度以下である半導体装置。 - 半導体基板と、
前記半導体基板内に離間して形成されたソース・ドレイン領域と、
前記ソース領域と前記ドレイン領域との間であって、前記半導体基板上に形成された、Si、Ge、Mg、Ca、Sr、Ba、及びNから選択される少なくとも1つの元素、並びにTi、Hf、及びZrから選択される少なくとも1つの元素を含むランタンアルミネートを有する絶縁膜と、
前記絶縁膜上に形成されたゲート電極と、
を備え、前記絶縁膜に含まれるTi、Zr、及びHfの元素の濃度の極大値は5原子%以上であり、かつAlの濃度以下である半導体装置。 - 前記半導体基板と、前記絶縁膜との間に酸化物層が設けられている請求項1乃至4の何れか1項に記載の半導体装置。
- 前記半導体基板が、Si基板、Ge基板、又はSiGe基板であり、前記ゲート電極が、Ti、Hf、及びZrから選択される少なくとも1つの元素を含む金属の窒化物を有する請求項1乃至4の何れか1項に記載の半導体装置。
- 前記絶縁膜がアモルファスである請求項1乃至4の何れか1項に記載の半導体装置。
- 半導体基板上にSi、Ge、Mg、Ca、Sr、及びBaから選択される少なくとも1つの元素、並びにランタンアルミネートを含む絶縁膜を形成する工程と、
前記絶縁膜上にTi、Hf、及びZrから選択される少なくとも1つの元素、並びにNを含むゲート電極を形成する工程と、
前記半導体基板、前記絶縁膜、及び前記ゲート電極を965℃以上1410℃未満で熱処理を行う工程と、を備える半導体装置の製造方法。 - 前記熱処理は、窒素雰囲気中で行われる請求項8に記載の半導体装置の製造方法。
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JP6206012B2 (ja) * | 2013-09-06 | 2017-10-04 | 住友電気工業株式会社 | 炭化珪素半導体装置 |
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US9673315B2 (en) | 2015-03-24 | 2017-06-06 | Kabushiki Kaisha Toshiba | Semiconductor device, inverter circuit, driving device, vehicle, and elevator |
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