JP5206668B2 - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
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- JP5206668B2 JP5206668B2 JP2009507327A JP2009507327A JP5206668B2 JP 5206668 B2 JP5206668 B2 JP 5206668B2 JP 2009507327 A JP2009507327 A JP 2009507327A JP 2009507327 A JP2009507327 A JP 2009507327A JP 5206668 B2 JP5206668 B2 JP 5206668B2
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- 239000004065 semiconductor Substances 0.000 title claims description 58
- 238000004519 manufacturing process Methods 0.000 title claims description 30
- 125000006850 spacer group Chemical group 0.000 claims description 34
- 238000000034 method Methods 0.000 claims description 29
- 239000000758 substrate Substances 0.000 claims description 17
- 239000012535 impurity Substances 0.000 claims description 16
- 238000002513 implantation Methods 0.000 claims description 14
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 13
- 238000001039 wet etching Methods 0.000 claims description 12
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 6
- 150000001875 compounds Chemical class 0.000 claims description 4
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 2
- 230000008859 change Effects 0.000 claims description 2
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 2
- 229910052732 germanium Inorganic materials 0.000 claims 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims 1
- 229910052796 boron Inorganic materials 0.000 claims 1
- 239000010410 layer Substances 0.000 description 26
- 238000005530 etching Methods 0.000 description 14
- 230000000694 effects Effects 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 238000005468 ion implantation Methods 0.000 description 8
- 230000004048 modification Effects 0.000 description 8
- 238000012986 modification Methods 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 230000008569 process Effects 0.000 description 7
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 238000002347 injection Methods 0.000 description 5
- 239000007924 injection Substances 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 238000000137 annealing Methods 0.000 description 3
- 239000000969 carrier Substances 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 3
- 230000003071 parasitic effect Effects 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 230000001737 promoting effect Effects 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 230000004913 activation Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000011982 device technology Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000012615 high-resolution technique Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
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Description
(a)半導体基板上にゲート電極を形成し、
(b)前記ゲート電極の両側にサイドウォールスペーサを形成し、
(c)前記サイドウォールスペーサのうち、一方の側のサイドウォールに、不純物を注入して、前記他方の側のサイドウォールとの間で、エッチングレートを異ならせ、
(d)前記不純物注入後のサイドウォールスペーサを、エッチングする、
工程を含む。
11 半導体基板
12 ゲート絶縁膜
13 ゲート電極
14 ソース・ドレイン
17、27 サイドウォールスペーサ
17S、27S ソース側サイドウォール
17D、27D ドレイン側サイドウォール
21 コンタクトエッチングストップレイヤ(歪生成層)
24 歪SiGeソース・ドレイン(歪生成層)
34 歪SiCソース・ドレイン(歪生成層)
CH チャネル領域
A チャネル領域ソース端
Claims (4)
- 半導体基板上にゲート電極を形成し、
前記ゲート電極の側壁に第1サイドウォールスペーサ及び第2サイドウォールスペーサを形成し、
前記第1サイドウォールスペーサに不純物を注入して前記第2サイドウォールスペーサとの間でウェットエッチングレートを異ならせ、
前記不純物注入後の前記第1サイドウォールスペーサ及び前記第2サイドウォールスペーサをウェットエッチングして前記第1サイドウォールスペーサの幅を前記第2サイドウォールスペーサの幅よりも小さくし、
前記ゲート電極、前記第1サイドウォールスペーサ及び前記第2サイドウォールスペーサをマスクとして前記半導体基板に不純物注入をすることにより、前記第1サイドウォールスペーサ側の前記半導体基板にソース領域を形成し、前記第2サイドウォールスペーサ側の前記半導体基板にドレイン領域を形成し、
前記第1サイドウォールスペーサと第2サイドウォールスペーサの形成後に、歪みを蓄積して前記ゲート電極の下方のチャネル領域に応力を与える化合物半導体層を前記ソース領域及び前記ドレイン領域に埋め込むか、または、前記第1サイドウォールスペーサ、前記第2サイドウォールスペーサ、前記ソース領域及び前記ドレイン領域を覆い、歪みを蓄積して前記ゲート電極の下方の前記チャネル領域に応力を与える絶縁膜を形成する、工程を含み、
前記第1サイドウォールスペーサの幅と前記第2サイドウォールスペーサの幅との相違により、前記化合物半導体層又は前記絶縁膜から前記チャネル領域の前記ソース側の端部に印加される歪みの絶対値を、前記化合物半導体層又は前記絶縁膜から前記チャネル領域の前記ドレイン側の端部に印加される歪みの絶対値よりも大きくする、
ことを特徴とする半導体装置の製造方法。 - 前記不純物は、所定のチルト角で一方向から注入されることを特徴とする請求項1に記載の半導体装置の製造方法。
- 前記第1サイドウォールスペーサ及び第2サイドウォールスペーサを、シリコン酸化膜で形成し、
前記第1サイドウォールスペーサに、第1の方向からゲルマニウム(Ge)を注入し、
前記ゲルマニウム(Ge)注入後に前記第1サイドウォールスペーサ及び前記第2サイドウォールスペーサをフッ酸でウェットエッチングする、
ことを特徴とする請求項1又は2に記載の半導体装置の製造方法。 - 前記第2サイドウォールスペーサに、前記第1の方向と逆の第2の方向からホウ素(B)を注入して、リン酸またはフッ酸に対するウェットエッチングレートを遅くする、
ことを特徴とする請求項1〜3のいずれか1項に記載の半導体装置の製造方法。
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