JPWO2008120335A1 - 半導体装置およびその製造方法 - Google Patents
半導体装置およびその製造方法 Download PDFInfo
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- JPWO2008120335A1 JPWO2008120335A1 JP2009507327A JP2009507327A JPWO2008120335A1 JP WO2008120335 A1 JPWO2008120335 A1 JP WO2008120335A1 JP 2009507327 A JP2009507327 A JP 2009507327A JP 2009507327 A JP2009507327 A JP 2009507327A JP WO2008120335 A1 JPWO2008120335 A1 JP WO2008120335A1
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- 238000004519 manufacturing process Methods 0.000 title claims description 37
- 239000000758 substrate Substances 0.000 claims abstract description 21
- 125000006850 spacer group Chemical group 0.000 claims abstract description 20
- 238000000034 method Methods 0.000 claims description 33
- 238000005530 etching Methods 0.000 claims description 20
- 238000002513 implantation Methods 0.000 claims description 16
- 239000012535 impurity Substances 0.000 claims description 16
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 13
- 238000001039 wet etching Methods 0.000 claims description 12
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 8
- 230000008569 process Effects 0.000 claims description 8
- 150000002500 ions Chemical class 0.000 claims description 7
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical class O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 4
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 4
- 230000001737 promoting effect Effects 0.000 claims description 3
- 230000008859 change Effects 0.000 claims description 2
- 150000001875 compounds Chemical class 0.000 claims description 2
- 229910052732 germanium Inorganic materials 0.000 claims 3
- 229910052698 phosphorus Inorganic materials 0.000 claims 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims 2
- 239000011574 phosphorus Substances 0.000 claims 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims 1
- 230000015572 biosynthetic process Effects 0.000 claims 1
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- 239000010410 layer Substances 0.000 description 26
- 230000000694 effects Effects 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 238000005468 ion implantation Methods 0.000 description 8
- 230000004048 modification Effects 0.000 description 8
- 238000012986 modification Methods 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 238000002347 injection Methods 0.000 description 5
- 239000007924 injection Substances 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 238000000137 annealing Methods 0.000 description 3
- 239000000969 carrier Substances 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 3
- 230000003071 parasitic effect Effects 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
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- 238000004088 simulation Methods 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 230000004913 activation Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000011982 device technology Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000012615 high-resolution technique Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
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Abstract
Description
(a)半導体基板上にゲート電極を形成し、
(b)前記ゲート電極の両側にサイドウォールスペーサを形成し、
(c)前記サイドウォールスペーサのうち、一方の側のサイドウォールに、不純物を注入して、前記他方の側のサイドウォールとの間で、エッチングレートを異ならせ、
(d)前記不純物注入後のサイドウォールスペーサを、エッチングする、
工程を含む。
11 半導体基板
12 ゲート絶縁膜
13 ゲート電極
14 ソース・ドレイン
17、27 サイドウォールスペーサ
17S、27S ソース側サイドウォール
17D、27D ドレイン側サイドウォール
21 コンタクトエッチングストップレイヤ(歪生成層)
24 歪SiGeソース・ドレイン(歪生成層)
34 歪SiCソース・ドレイン(歪生成層)
CH チャネル領域
A チャネル領域ソース端
Claims (19)
- 半導体基板上のゲート電極と、
前記ゲート電極下方の半導体基板領域に設けられるチャネル領域と、
前記チャネル領域に応力を与える歪生成層と、
を有し、前記チャネル領域のソース端に印加される歪みの絶対値が、ドレイン端に印加される歪みの絶対値よりも大きい、
ことを特徴とする半導体装置。 - 前記ゲート電極の側壁に形成されるサイドウォールスペーサ、
をさらに有し、前記サイドウォールスペーサは、前記ゲート電極のソース側に形成されるサイドウウォール幅が、前記ゲート電極のドレイン側に形成されるサイドウォール幅よりも小さい、
ことを特徴とする請求項1に記載の半導体装置。 - 前記歪生成層は、前記ゲート電極の上方に位置するコンタクトエッチングストップレイヤであることを特徴とする請求項1又は2に記載の半導体装置。
- 前記歪生成層は、前記半導体基板のソース・ドレイン領域に埋め込まれる化合物半導体層であることを特徴とする請求項1又は2に記載の半導体装置。
- 前記半導体装置は、NMOS領域とPMOS領域を有し、
記歪生成層は、前記NMOS領域に引っ張り応力を与え、前記PMOS領域に圧縮応力を与える、ことを特徴とする請求項1又は2に記載の半導体装置。 - 前記ソース側サイドウォールとドレイン側サイドウォールの少なくとも一方に、所定のエッチャントに対するウェットエッチングレートを変化させるイオンが注入されていることを特徴とする請求項2に記載の半導体装置。
- 前記ソース側のサイドウォールには、PまたはGeがイオン注入されていることを特徴とする請求項2に記載の半導体装置。
- 前記ドレイン側のサイドウォールには、Bがイオン注入されていることを特徴とする請求項2に記載の半導体装置。
- 前記サイドウォールは、シリコン酸化膜とシリコン窒化膜の二重構造を有し、ソース側の前記シリコン窒化膜に、所定のエッチャントに対するエッチングレートを促進するイオンが注入され、および/または、ドレイン側の前記シリコン窒化膜に、前記所定のエッチャントに対するエッチングレートを遅くするイオンが注入されていることを特徴とする請求項2に記載の半導体装置。
- 半導体基板上にゲート電極を形成し、
前記ゲート電極の両側にサイドウォールスペーサを形成し、
前記サイドウォールスペーサのうち、一方の側のサイドウォールに不純物を注入して、前記他方の側のサイドウォールとの間で、ウェットエッチングレートを異ならせ、
前記不純物注入後のサイドウォールスペーサをエッチングする、
工程を含むことを特徴とする半導体装置の製造方法。 - 前記不純物は、所定のチルト角で一方向から注入されることを特徴とする請求項10に記載の半導体装置の製造方法。
- 前記エッチングは、ウェットエッチングであることを特徴とする請求項10又は11に記載の半導体装置の製造方法。
- 前記サイドウォールスペーサを、シリコン酸化膜とシリコン窒化膜の二重構造とし、
前記一方の側のサイドウォールに、前記一方向からリン(P)を注入し、
前記リン(P)注入後のサイドウォールスペーサをリン酸でウェットエッチングする、
ことを特徴とする請求項10〜12のいずれか1項に記載の半導体装置の製造方法。 - 前記サイドウォールスペーサを、シリコン酸化膜で形成し、
前記一方の側のサイドウォールに、前記一方向からゲルマニウム(Ge)を注入し、
前記ゲルマニウム(Ge)注入後のサイドウォールスペーサをフッ酸でウェットエッチングする、
ことを特徴とする請求項10〜13のいずれか1項に記載の半導体装置の製造方法。 - 前記一方の側のサイドウォールに、前記一方向からホウ素(B)を注入して、リン酸またはフッ酸に対するウェットエッチングレートを遅くする、
ことを特徴とする請求項10〜14のいずれか1項に記載の半導体装置の製造方法。 - 前記サイドウォールに対する一方向からの不純物注入は、前記ゲート電極に対して30〜60度のチルト角で行われることを特徴とする請求項10〜15のいずれか1項に記載の半導体装置の製造方法。
- 前記サイドウォール形成後に、前記ゲート電極下方の前記半導体基板領域に応力を与える歪生成層を形成する工程、
をさらに含むことを特徴とする請求項10〜16のいずれか1項に記載の半導体装置の製造方法。 - 前記歪生成層として、前記ゲート電極の上方にコンタクトエッチングストップレイヤを形成する工程、
をさらに含むことを特徴とする請求項17に記載の半導体装置の製造方法。 - 前記歪生成層として、前記ゲート電極の両側のソース・ドレイン領域に歪ソース・ドレイン層を形成する工程、
をさらに含むことを特徴とする請求項17に記載の半導体装置の製造方法。
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