JP5184831B2 - フィン型トランジスタの形成方法 - Google Patents
フィン型トランジスタの形成方法 Download PDFInfo
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- JP5184831B2 JP5184831B2 JP2007183841A JP2007183841A JP5184831B2 JP 5184831 B2 JP5184831 B2 JP 5184831B2 JP 2007183841 A JP2007183841 A JP 2007183841A JP 2007183841 A JP2007183841 A JP 2007183841A JP 5184831 B2 JP5184831 B2 JP 5184831B2
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- fin
- insulating film
- source
- gate electrode
- fet
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- 238000000034 method Methods 0.000 title claims description 53
- 239000012535 impurity Substances 0.000 claims description 64
- 238000002513 implantation Methods 0.000 claims description 29
- 239000004065 semiconductor Substances 0.000 claims description 17
- 230000008569 process Effects 0.000 description 21
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 15
- 229910052710 silicon Inorganic materials 0.000 description 15
- 239000010703 silicon Substances 0.000 description 15
- 239000000758 substrate Substances 0.000 description 15
- 238000005468 ion implantation Methods 0.000 description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 12
- 238000010586 diagram Methods 0.000 description 12
- 229910052814 silicon oxide Inorganic materials 0.000 description 12
- 238000009826 distribution Methods 0.000 description 9
- 125000004429 atom Chemical group 0.000 description 8
- 150000002500 ions Chemical class 0.000 description 7
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 7
- 229920005591 polysilicon Polymers 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 6
- 238000005530 etching Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 230000006870 function Effects 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 230000005465 channeling Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 125000005843 halogen group Chemical group 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66787—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel
- H01L29/66795—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
- H01L29/66803—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET with a step of doping the vertical sidewall, e.g. using tilted or multi-angled implants
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
- Thin Film Transistor (AREA)
Description
図1は、実施の形態1に係るフィン型トランジスタ(フィンFET)の断面斜視図である。同図においては、支持基板、埋込絶縁膜(BOX(Buried OXide)層)、半導体層(SOI(Silicon-On-Insulator)層)が積層して成るSOI基板を用いて形成したものを例として示すが、本発明はいわゆるバルクの半導体基板を用いたものに対しても適用可能である。また図2は、図1のフィンFETの上面図であり、図3は同じくその断面図である。図3(a),(b)はそれぞれ、図2のA−A線およびB−B線に沿った断面に対応している。なお簡単のため、図3(a)においては、フィン10を覆うサイドウォール21の図示を省略している。
実施の形態1ではソース/ドレイン領域13の形成をエクステンション領域12と同様にクラスタ注入により行ったが他の手法により形成してもよい。本実施の形態ではその一例を示す。
本実施の形態でも、ソース/ドレイン領域13の形成手法の一例を示す。図17は、実施の形態3に係るフィンTFTの断面斜視図である。同図においては、図1に示したものと同様の要素にはそれと同一符号を付してある。また図18は、図17のフィンFETの上面図であり、図19は同じくその断面図である。図19(a),(b)はそれぞれ、図18のA−A線およびB−B線に沿った断面に対応している。なお簡単のため、図19(a)においては、サイドウォール21の図示を省略している。
Claims (1)
- (a)上面に第1絶縁膜を有するフィン状の半導体である半導体フィンを形成する工程と、
(b)前記半導体フィンの側面の一部を覆うゲート電極、および当該ゲート電極と前記半導体フィンとの間に介在するゲート絶縁膜である第2絶縁膜を形成する工程と、
(c)前記第1絶縁膜および前記ゲート電極をマスクとするクラスタ注入により、前記半導体フィンの側面に不純物を導入することでソース/ドレイン・エクステンション領域を形成する工程と、
(d)前記ゲート電極の側面にサイドウォールを形成する工程と、
(e)前記サイドウォールよりも外側の前記半導体フィンを除去する工程と、
(f)前記工程(e)の後の前記半導体フィンの両端に、不純物が添加されたエピタキシャル層を形成する工程とを備える
ことを特徴とするフィン型トランジスタの形成方法。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007183841A JP5184831B2 (ja) | 2007-07-13 | 2007-07-13 | フィン型トランジスタの形成方法 |
Applications Claiming Priority (1)
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---|---|---|---|
JP2007183841A JP5184831B2 (ja) | 2007-07-13 | 2007-07-13 | フィン型トランジスタの形成方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2009021456A JP2009021456A (ja) | 2009-01-29 |
JP5184831B2 true JP5184831B2 (ja) | 2013-04-17 |
Family
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JP2007183841A Expired - Fee Related JP5184831B2 (ja) | 2007-07-13 | 2007-07-13 | フィン型トランジスタの形成方法 |
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JP (1) | JP5184831B2 (ja) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8320191B2 (en) | 2007-08-30 | 2012-11-27 | Infineon Technologies Ag | Memory cell arrangement, method for controlling a memory cell, memory array and electronic device |
US8716797B2 (en) * | 2009-11-03 | 2014-05-06 | International Business Machines Corporation | FinFET spacer formation by oriented implantation |
US8313999B2 (en) * | 2009-12-23 | 2012-11-20 | Intel Corporation | Multi-gate semiconductor device with self-aligned epitaxial source and drain |
JP5714831B2 (ja) * | 2010-03-18 | 2015-05-07 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
JP2012049286A (ja) * | 2010-08-26 | 2012-03-08 | Sen Corp | 半導体装置の製造方法 |
KR102018101B1 (ko) | 2013-02-04 | 2019-11-14 | 삼성전자 주식회사 | 반도체 소자 및 이의 제조 방법 |
KR102094535B1 (ko) | 2014-03-21 | 2020-03-30 | 삼성전자주식회사 | 트랜지스터 및 그 제조 방법 |
KR102287406B1 (ko) | 2015-02-06 | 2021-08-06 | 삼성전자주식회사 | 반도체 장치 |
JP6263240B2 (ja) * | 2016-08-10 | 2018-01-17 | 住友重機械イオンテクノロジー株式会社 | 半導体装置の製造方法 |
US11670675B2 (en) | 2020-12-04 | 2023-06-06 | United Semiconductor Japan Co., Ltd. | Semiconductor device |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005086024A (ja) * | 2003-09-09 | 2005-03-31 | Toshiba Corp | 半導体装置及びその製造方法 |
JP2007103455A (ja) * | 2005-09-30 | 2007-04-19 | Toshiba Corp | フィン構造の半導体装置及びその製造方法 |
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- 2007-07-13 JP JP2007183841A patent/JP5184831B2/ja not_active Expired - Fee Related
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