WO2008120335A1 - 半導体装置およびその製造方法 - Google Patents

半導体装置およびその製造方法 Download PDF

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Publication number
WO2008120335A1
WO2008120335A1 PCT/JP2007/056716 JP2007056716W WO2008120335A1 WO 2008120335 A1 WO2008120335 A1 WO 2008120335A1 JP 2007056716 W JP2007056716 W JP 2007056716W WO 2008120335 A1 WO2008120335 A1 WO 2008120335A1
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WIPO (PCT)
Prior art keywords
gate electrode
side wall
semiconductor device
strain
channel region
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PCT/JP2007/056716
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English (en)
French (fr)
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Toshihiko Miyashita
Keiji Ikeda
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Fujitsu Microelectronics Limited
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Application filed by Fujitsu Microelectronics Limited filed Critical Fujitsu Microelectronics Limited
Priority to JP2009507327A priority Critical patent/JP5206668B2/ja
Priority to PCT/JP2007/056716 priority patent/WO2008120335A1/ja
Priority to CN200780052401XA priority patent/CN101641770B/zh
Publication of WO2008120335A1 publication Critical patent/WO2008120335A1/ja
Priority to US12/561,841 priority patent/US20100025744A1/en
Priority to US13/440,625 priority patent/US20120190162A1/en

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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
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Abstract

　半導体装置は、半導体基板上のゲート電極（１３）と、前記ゲート電極下方の半導体基板領域に設けられるチャネル領域（ＣＨ）と、前記チャネル領域に応力を与える歪生成層（２１）と、を有し、前記チャネル領域のソース端（Ａ）に印加される歪みの絶対値は、ドレイン端に印加される歪みの絶対値よりも大きい。良好な構成例では、ゲート電極の側壁に形成されるサイドウォールスペーサ（１７）をさらに有し、前記ゲート電極のソース側に形成されるサイドウウォール幅（Ｗ１）が、前記ゲート電極のドレイン側に形成されるサイドウォール幅（Ｗ２）よりも小さい。
PCT/JP2007/056716 2007-03-28 2007-03-28 半導体装置およびその製造方法 WO2008120335A1 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2009507327A JP5206668B2 (ja) 2007-03-28 2007-03-28 半導体装置の製造方法
PCT/JP2007/056716 WO2008120335A1 (ja) 2007-03-28 2007-03-28 半導体装置およびその製造方法
CN200780052401XA CN101641770B (zh) 2007-03-28 2007-03-28 半导体器件及其制造方法
US12/561,841 US20100025744A1 (en) 2007-03-28 2009-09-17 Semiconductor device and method of manufacturing same
US13/440,625 US20120190162A1 (en) 2007-03-28 2012-04-05 Semiconductor device and method of manufacturing same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2007/056716 WO2008120335A1 (ja) 2007-03-28 2007-03-28 半導体装置およびその製造方法

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US12/561,841 Continuation US20100025744A1 (en) 2007-03-28 2009-09-17 Semiconductor device and method of manufacturing same

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WO2008120335A1 true WO2008120335A1 (ja) 2008-10-09

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JP (1) JP5206668B2 (ja)
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WO (1) WO2008120335A1 (ja)

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JP2010103495A (ja) * 2008-09-29 2010-05-06 Adeka Corp 半導体デバイス、その製造装置及び製造方法
JP2010118500A (ja) * 2008-11-13 2010-05-27 Toshiba Corp 半導体装置及びその製造方法
JP2011035393A (ja) * 2009-07-29 2011-02-17 Internatl Business Mach Corp <Ibm> 埋め込み拡張領域を有するｓｏｉトランジスタ、及びその形成方法
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