JP2011035393A - 埋め込み拡張領域を有するsoiトランジスタ、及びその形成方法 - Google Patents
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Abstract
【解決手段】 シリコン・オン・インシュレータ(SOI)トランジスタ・デバイスは、バルク基板の上に形成された埋め込み絶縁体層と、埋め込み絶縁体層上に形成されたSOI層と、トランジスタ・デバイスのソース及びドレイン領域に対応する、ゲート導体の対向する側に隣接して配置された一対のシリコン含有エピタキシャル領域とを含み、エピタキシャル領域の部分は、埋め込み絶縁体内に埋め込まれ、かつ、トランジスタ・デバイスのチャネル領域の対向する端部におけるソース及びドレイン拡張領域に対応するSOI層の垂直面及び底面の両方と接触している。
【選択図】 図13
Description
102:バルク基板
104:BOX層
106、906:SOI層
108、308、408:ソース/ドレイン領域
110、910:チャネル領域
112:浅いトレンチ分離(STI)領域
114:ゲート電極
116:ゲート誘電体層
118:ゲート側壁スペーサ
204:埋め込み窒化物層
502:スペーサ/ハードマスク層
504:犠牲酸化物ライナ層
506、906:フォトレジスト層
508、908:底面
510:エピタキシャル領域
512:ゲートスペーサ
602:犠牲層
702:犠牲窒化物ライナ
704:犠牲酸化物層
912、1012:埋め込みエピタキシャル領域
Claims (20)
- シリコン・オン・インシュレータ(SOI)トランジスタ・デバイスであって、
バルク基板の上に形成された埋め込み絶縁体層と、
前記埋め込み絶縁体層上に形成されたSOI層と、
前記トランジスタ・デバイスのソース及びドレイン領域に対応する、ゲート導体の対向する側に隣接して配置された、一対のシリコン含有エピタキシャル領域と、
を含み、
前記エピタキシャル領域の部分は前記埋め込み絶縁体内に埋め込まれ、かつ、前記トランジスタ・デバイスのチャネル領域の対向する端部におけるソース及びドレイン拡張領域に対応する前記SOI層の垂直面及び底面の両方と接触している、デバイス - 前記エピタキシャル領域は、前記ゲート導体に対して隆起型ソース/ドレイン領域を含む、請求項1に記載のデバイス。
- 前記エピタキシャル領域は、前記SOI層及び前記ゲート導体に対して埋め込み領域を含む、請求項1に記載のデバイス。
- 前記埋め込み絶縁体層の部分は内部に異なるエッチング速度をもたらすようにドープされ、これにより、ソース及びドレイン拡張領域に対応する前記SOI層の垂直面及び底面の両方と接触している前記エピタキシャル領域の前記部分の非対称のプロファイルがもたらされる、請求項1に記載のデバイス。
- 前記エピタキシャル領域の底面は、前記バルク基板と接触している、請求項3に記載のデバイス。
- 前記エピタキシャル領域は、シリコンゲルマニウム(SiGe)を含む、請求項1に記載のデバイス。
- 前記エピタキシャル領域は、炭化シリコン(SiC)を含む、請求項1に記載のデバイス。
- シリコン・オン・インシュレータ(SOI)トランジスタ・デバイスを形成する方法であって、前記方法は、
バルク基板の上に形成された埋め込み絶縁体層と、前記埋め込み絶縁体層上に形成されたSOI層と、前記SOI層の上に形成されたゲート導体及びゲート絶縁体層と、前記ゲート導体の側壁の上及び側壁上に形成された使い捨てスペーサ層とを含む、開始構造体の上に第1の犠牲層を形成することと、
前記使い捨てスペーサ層及び前記ゲート導体の対向する側に隣接して配置された前記第1の犠牲層の部分を除去することと、
前記使い捨てスペーサ層及び前記ゲート導体の対向する側に隣接して配置された前記SOI層の対応する露出部分を除去することと、
前記埋め込み絶縁体層を下方及び横方向にエッチングして、前記トランジスタ・デバイスのチャネル領域の対向する端部におけるソース及びドレイン拡張領域に対応する前記SOI層の垂直面及び底面の両方を露出させることと、
前記トランジスタ・デバイスのソース及びドレイン領域に対応する、前記ゲート導体の対向する側に隣接して配置された一対のシリコン含有エピタキシャル領域を成長させ、前記埋め込み絶縁体層の前記エッチングされた部分を充填することと、
を含み、
前記エピタキシャル領域の部分は、前記トランジスタ・デバイスの前記チャネル領域の前記対向する端部におけるソース及びドレイン拡張領域に対応する前記SOI層の垂直面及び底面と接触している、方法。 - 前記埋め込み絶縁体は埋め込み酸化物層(BOX)であり、
前記第1の犠牲層は酸化物ライナを含み、
前記BOXの前記下方及び横方向のエッチングは、酸化物材料の等方性エッチングを含む、請求項8に記載の方法。 - 前記使い捨てスペーサ層及び前記ゲート導体の対向する側に隣接して配置された前記第1の犠牲層の部分を除去することは、前記第1の犠牲層の上にフォトレジスト材料を塗布し、パターン形成することによって、前記ゲート導体に対して非自己整合式に実施される、請求項9に記載の方法。
- 前記使い捨てスペーサ層及び前記ゲート導体の対向する側に隣接して配置された前記第1の犠牲層の部分を除去することは、前記第1の犠牲層の上に第2の犠牲層を形成し、前記第2の犠牲層を平坦化し、陥凹して前記第1の犠牲層の垂直部分を露出させることによって、前記ゲート導体に対して自己整合式に実施される、請求項9に記載の方法。
- 前記第2の犠牲層は、酸化物及び窒化物の両方に対して異なるエッチング速度を有する材料を含む、請求項11に記載の方法。
- 前記使い捨てスペーサ層及び前記ゲート導体の対向する側に隣接して配置された前記第1の犠牲層の部分を除去することは、前記第1の犠牲層の上に第2の犠牲層を形成し、前記第2の犠牲層の上に第3の犠牲層を形成し、前記第3の犠牲層を平坦化し、陥凹して前記第2の犠牲層の垂直部分を露出させることによって、前記ゲート導体に対して自己整合式に実施される、請求項9に記載の方法。
- 前記第2の犠牲層は窒化物ライナを含み、前記第3の犠牲層は酸化物層を含む、請求項13に記載の方法。
- 内部に異なるエッチング速度をもたらすように、前記BOX層の部分にイオン注入し、これにより、ソース及びドレイン拡張領域に対応する前記SOI層の垂直面及び底面の両方と接触している前記エピタキシャル領域の前記部分の非対称のプロファイルをもたらすことをさらに含む、請求項9に記載の方法。
- 前記エピタキシャル領域は、前記ゲート導体に対して隆起型ソース/ドレイン領域を含む、請求項9に記載の方法。
- 前記エピタキシャル領域が前記SOI層及び前記ゲート導体に対して埋め込み領域を含むように、前記第1の犠牲層を形成する前に前記SOI層の部分を陥凹させることをさらに含む、請求項9に記載の方法。
- 前記BOX層の前記下方及び横方向のエッチングは、前記BOX層を完全に貫通して、前記バルク基板の前記上部に至るまでエッチングし、前記エピタキシャル領域の前記底面が前記バルク基板と接触するようにする、請求項17に記載の方法。
- 前記エピタキシャル領域はシリコンゲルマニウム(SiGe)を含む、請求項9に記載の方法。
- 前記エピタキシャル領域は炭化シリコン(SiC)を含む、請求項9に記載の方法。
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US12/511,440 US8106456B2 (en) | 2009-07-29 | 2009-07-29 | SOI transistors having an embedded extension region to improve extension resistance and channel strain characteristics |
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US8518758B2 (en) * | 2010-03-18 | 2013-08-27 | Globalfoundries Inc. | ETSOI with reduced extension resistance |
US8546228B2 (en) | 2010-06-16 | 2013-10-01 | International Business Machines Corporation | Strained thin body CMOS device having vertically raised source/drain stressors with single spacer |
US8778767B2 (en) * | 2010-11-18 | 2014-07-15 | Taiwan Semiconductor Manufacturing Company, Ltd. | Integrated circuits and fabrication methods thereof |
US8394712B2 (en) * | 2011-05-05 | 2013-03-12 | International Business Machines Corporation | Cavity-free interface between extension regions and embedded silicon-carbon alloy source/drain regions |
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US8106456B2 (en) | 2012-01-31 |
JP5869753B2 (ja) | 2016-02-24 |
US20110024840A1 (en) | 2011-02-03 |
KR20110013261A (ko) | 2011-02-09 |
KR101589765B1 (ko) | 2016-01-28 |
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