JP2009010111A - 半導体装置および半導体装置の製造方法 - Google Patents
半導体装置および半導体装置の製造方法 Download PDFInfo
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- JP2009010111A JP2009010111A JP2007169023A JP2007169023A JP2009010111A JP 2009010111 A JP2009010111 A JP 2009010111A JP 2007169023 A JP2007169023 A JP 2007169023A JP 2007169023 A JP2007169023 A JP 2007169023A JP 2009010111 A JP2009010111 A JP 2009010111A
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- H01L29/7834—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's with a non-planar structure, e.g. the gate or the source or the drain being non-planar
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- H01L29/7835—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's with asymmetrical source and drain regions, e.g. lateral high-voltage MISFETs with drain offset region, extended drain MISFETs
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- H01L29/78—Field effect transistors with field effect produced by an insulated gate
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Abstract
【解決手段】半導体基板3上に設けられたゲート電極9と、ゲート電極9両脇に不純物を導入して設けられたソース/ドレイン領域15とを備えた半導体装置1aにおいて、ソース/ドレイン領域15は、ゲート電極9脇における半導体基板3を掘り下げた位置に当該半導体基板3とは格子定数が異なる半導体材料をエピタキシャル成長させてなるエピタキシャル成長層11と、半導体基板3の表面層に設けた基板拡散層13とで構成されている。
【選択図】図1
Description
図1は第1実施形態の半導体装置の構成を示す概略断面図である。この図に示す半導体装置1aは、シリコン(Si)からなる半導体基板3の表面側が、素子分離5で分離され、分離されたアクティブ領域7上を横切る状態でゲート電極9を設けてなる。また、ゲート電極9の両側における半導体基板3の表面が掘り下げられている。この掘り下げたリセス部分には、半導体基板3とは格子定数が異なる半導体材料がエピタキシャル成長層11として設けられ、不純物が拡散されている。また、ゲート電極9に対してエピタキシャル成長層11の外側には、半導体層3の表面層に不純物を拡散してなる基板拡散層13が設けられている。
図6は、第2実施形態の半導体装置の構成を示す概略断面図である。この図に示す半導体装置1bが、図1を用いて説明した第1実施形態の半導体装置1aと異なるところは、ソース/ドレイン領域15を構成する基板拡散層13の深さが、エピタキシャル成長層11の深さよりも深いところにある。他の構成は第1実施形態と同様であることとする。
図7は、第3実施形態の半導体装置の構成を示す概略断面図である。この図に示す半導体装置1cが、図1を用いて説明した第1実施形態の半導体装置1aと異なるところは、ソース/ドレイン領域15を構成する基板拡散層13の表面高さが、ゲート電極9下の半導体基板3の表面高さよりも低いところにある。他の構成は第1実施形態と同様であることとする。
図8は、第4実施形態の半導体装置の構成を示す概略断面図である。この図に示す半導体装置61aは、特にp型のMOSトランジスタTrを備えた構成であることとする。そして、この半導体装置61aが、図1を用いて説明した第1実施形態の半導体装置1aと異なるところは、ソース/ドレイン領域15の一方のみがエピタキシャル成長層11を用いて構成されており、ソース/ドレイン領域15の他方は基板拡散層13のみを用いて構成されているところにある。また、基板拡散層13に隣接させて、ソース/ドレイン領域15とは逆導電型(n型)の拡散層(逆導電型拡散層63)が設けられている。以下、第1実施形態と同様の構成に付いての重複する説明は省略する。
図10は、第5実施形態の半導体装置の構成を示す概略断面図である。この図に示す半導体装置61bが、第4実施形態の半導体装置61aと異なるところは、ソース/ドレイン領域15の一方が、エピタキシャル成長層11と共に基板拡散層13を用いて構成されているところにあり、他の構成は同様であることとする。
Claims (10)
- 半導体基板上に設けられたゲート電極と、前記ゲート電極両脇に不純物を導入して設けられたソース/ドレイン領域とを備えた半導体装置において、
前記ソース/ドレイン領域は、
前記ゲート電極脇における前記半導体基板を掘り下げた位置に当該半導体基板とは格子定数が異なる半導体材料をエピタキシャル成長させてなるエピタキシャル成長層と、
前記半導体基板の表面層に設けた基板拡散層とで構成されている
ことを特徴とする半導体装置。 - 請求項1記載の半導体装置において、
前記エピタキシャル成長層は前記ゲート電極の両脇に設けられ、
前記基板拡散層は前記エピタキシャル成長層の外側に設けられた
ことを特徴とする半導体装置。 - 請求項2記載の半導体装置において、
前記エピタキシャル成長層は、チャネル長方向に所定幅で設けられている
ことを特徴とする半導体装置。 - 請求項2記載の半導体装置において、
前記基板拡散層の表面は、前記ゲート電極の直下における前記半導体基板の表面よりも低い
ことを特徴とする半導体装置。 - 請求項1記載の半導体装置において、
前記ソース/ドレイン領域のうちの一方が前記エピタキシャル成長層を用いて構成され、他方が前記基板拡散層のみで構成された
ことを特徴とする半導体装置。 - 請求項5記載の半導体装置において、
前記基板拡散層に隣接して当該基板拡散層とは異なる導電型の逆導電型拡散層が設けられ、
前記ソース/ドレイン領域と前記逆導電型拡散層との表面に設けられたシリサイド層によって、前記基板拡散層と当該逆導電型拡散層とが短絡している
ことを特徴とする半導体装置。 - 請求項6記載の半導体装置において、
前記半導体基板はシリコンからなり、
前記エピタキシャル成長層は、シリコンゲルマニウムからなる
ことを特徴とする半導体装置。 - 請求項5記載の半導体装置において、
前記ソース/ドレイン領域のうちの一方は、前記エピタキシャル成長層と、その外側に設けられた前記基板拡散層とで構成されている
ことを特徴とする半導体装置。 - 請求項8記載の半導体装置において、
前記基板拡散層の表面は、前記ゲート電極の直下における前記半導体基板の表面よりも低い
ことを特徴とする半導体装置。 - 半導体基板上にゲート電極を形成する第1工程と、
マスクパターン上からのエッチングにより、前記ゲート電極脇における前記半導体基板の表面層を掘り下げる第2工程と、
前記掘り下げられた半導体基板の表面に当該半導体基板とは格子定数が異なる半導体材料からなるエピタキシャル成長層を形成する第3工程と、
前記マスクパターンを除去して前記半導体基板の表面を露出させた後、前記エピタキシャル成長層と前記半導体基板の表面層とに不純物を拡散させることにより、不純物が拡散された当該エピタキシャル成長層と当該半導体基板の表面層に不純物を拡散させてなる基板拡散層とで構成されたソース/ドレイン領域を形成する第4工程とを行う
ことを特徴とする半導体装置の製造方法。
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JP2007169023A JP5286701B2 (ja) | 2007-06-27 | 2007-06-27 | 半導体装置および半導体装置の製造方法 |
TW097120490A TWI460859B (zh) | 2007-06-27 | 2008-06-02 | 半導體裝置及製造半導體裝置之方法 |
US12/137,112 US8039901B2 (en) | 2007-06-27 | 2008-06-11 | Epitaxial source/drain transistor |
KR1020080060865A KR101475364B1 (ko) | 2007-06-27 | 2008-06-26 | 반도체 장치 및 반도체 장치의 제조 방법 |
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US13/238,580 US8486793B2 (en) | 2007-06-27 | 2011-09-21 | Method for manufacturing semiconductor device with semiconductor materials with different lattice constants |
US13/913,012 US9070704B2 (en) | 2007-06-27 | 2013-06-07 | Method for manufacturing semiconductor device with recess, epitaxial growth and diffusion |
US14/662,351 US9356146B2 (en) | 2007-06-27 | 2015-03-19 | Semiconductor device with recess, epitaxial source/drain region and diffuson |
US15/136,091 US20160240674A1 (en) | 2007-06-27 | 2016-04-22 | Method for manufacturing semiconductor device with recess, epitaxial growth and diffusion |
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Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011035393A (ja) * | 2009-07-29 | 2011-02-17 | Internatl Business Mach Corp <Ibm> | 埋め込み拡張領域を有するsoiトランジスタ、及びその形成方法 |
JP2011054972A (ja) * | 2009-09-03 | 2011-03-17 | Internatl Business Mach Corp <Ibm> | 集積回路構造及びその製造方法 |
JP2011054740A (ja) * | 2009-09-01 | 2011-03-17 | Toshiba Corp | 半導体装置及びその製造方法 |
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EP2541793A1 (en) | 2011-06-27 | 2013-01-02 | Sony Corporation | Communication Apparatus and Communication System |
JP5141686B2 (ja) * | 2007-07-12 | 2013-02-13 | 富士通セミコンダクター株式会社 | 半導体デバイス及び半導体デバイスの製造方法 |
US8415224B2 (en) | 2010-08-25 | 2013-04-09 | Samsung Electronics Co., Ltd. | Method of fabricating a semiconductor device including forming trenches having particular structures |
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JP2016004963A (ja) * | 2014-06-19 | 2016-01-12 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5178103B2 (ja) * | 2007-09-12 | 2013-04-10 | 株式会社東芝 | 半導体装置およびその製造方法 |
TWI552230B (zh) * | 2010-07-15 | 2016-10-01 | 聯華電子股份有限公司 | 金氧半導體電晶體及其製作方法 |
US8816409B2 (en) | 2010-07-15 | 2014-08-26 | United Microelectronics Corp. | Metal-oxide semiconductor transistor |
KR101776926B1 (ko) * | 2010-09-07 | 2017-09-08 | 삼성전자주식회사 | 반도체 소자 및 그 제조 방법 |
CN102487008A (zh) * | 2010-12-01 | 2012-06-06 | 中芯国际集成电路制造(北京)有限公司 | 半导体器件及其形成方法 |
CN102646573B (zh) * | 2011-02-17 | 2014-10-22 | 中芯国际集成电路制造(上海)有限公司 | 半导体器件及其制作方法 |
US9218962B2 (en) | 2011-05-19 | 2015-12-22 | Globalfoundries Inc. | Low temperature epitaxy of a semiconductor alloy including silicon and germanium employing a high order silane precursor |
KR20130118103A (ko) * | 2012-04-19 | 2013-10-29 | 삼성전자주식회사 | 반도체 장치 및 그 제조 방법 |
CN103779216B (zh) * | 2012-10-18 | 2016-09-21 | 中芯国际集成电路制造(上海)有限公司 | 一种半导体器件的制备方法 |
CN103811420B (zh) * | 2012-11-08 | 2016-12-21 | 中芯国际集成电路制造(上海)有限公司 | 一种半导体器件的制备方法 |
KR20140106270A (ko) | 2013-02-26 | 2014-09-03 | 삼성전자주식회사 | 집적 회로 장치 및 그 제조 방법 |
US9093555B2 (en) * | 2013-07-25 | 2015-07-28 | Texas Instruments Incorporated | Method of CMOS manufacturing utilizing multi-layer epitaxial hardmask films for improved EPI profile |
US9224656B2 (en) * | 2013-07-25 | 2015-12-29 | Texas Instruments Incorporated | Method of CMOS manufacturing utilizing multi-layer epitaxial hardmask films for improved gate spacer control |
US9324841B2 (en) * | 2013-10-09 | 2016-04-26 | Globalfoundries Inc. | Methods for preventing oxidation damage during FinFET fabrication |
CN103972065A (zh) * | 2014-05-05 | 2014-08-06 | 清华大学 | SiGe层的形成方法 |
US9837499B2 (en) * | 2014-08-13 | 2017-12-05 | Intel Corporation | Self-aligned gate last III-N transistors |
US9595585B2 (en) * | 2014-09-19 | 2017-03-14 | Semiconductor Manufacturing International (Beijing) Corporation | Methods for high-k metal gate CMOS with SiC and SiGe source/drain regions |
CN106611787A (zh) * | 2015-10-26 | 2017-05-03 | 联华电子股份有限公司 | 半导体结构及其制作方法 |
KR102481427B1 (ko) | 2016-01-13 | 2022-12-27 | 삼성전자주식회사 | 반도체 장치 및 그 제조 방법 |
US11101360B2 (en) * | 2018-11-29 | 2021-08-24 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method of manufacturing a semiconductor device and a semiconductor device |
US20220028989A1 (en) * | 2020-07-27 | 2022-01-27 | The Boeing Company | Fabricating sub-micron contacts to buried well devices |
CN116546811B (zh) * | 2023-06-27 | 2023-09-12 | 合肥晶合集成电路股份有限公司 | 一种半导体集成器件及其制作方法 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0974188A (ja) * | 1995-09-05 | 1997-03-18 | Mitsubishi Electric Corp | 半導体装置及びその製造方法 |
WO2006006972A1 (en) * | 2004-06-24 | 2006-01-19 | International Business Machines Corporation | Improved strained-silicon cmos device and method |
WO2006023183A2 (en) * | 2004-08-24 | 2006-03-02 | Freescale Semiconductor, Inc. | Method and apparatus for performance enhancement in an asymmetrical semiconductor device |
JP2006229071A (ja) * | 2005-02-18 | 2006-08-31 | Fujitsu Ltd | 半導体装置 |
WO2007034553A1 (ja) * | 2005-09-22 | 2007-03-29 | Fujitsu Limited | 半導体装置およびその製造方法 |
JP2007110098A (ja) * | 2005-09-13 | 2007-04-26 | Infineon Technologies Ag | 応力変形させた半導体装置およびその製造方法 |
JP2008060408A (ja) * | 2006-08-31 | 2008-03-13 | Toshiba Corp | 半導体装置 |
Family Cites Families (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5744842A (en) * | 1996-08-15 | 1998-04-28 | Industrial Technology Research Institute | Area-efficient VDD-to-VSS ESD protection circuit |
JP2004039866A (ja) * | 2002-07-03 | 2004-02-05 | Toshiba Corp | 半導体装置及びその製造方法 |
US7078742B2 (en) * | 2003-07-25 | 2006-07-18 | Taiwan Semiconductor Manufacturing Co., Ltd. | Strained-channel semiconductor structure and method of fabricating the same |
US7112495B2 (en) * | 2003-08-15 | 2006-09-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Structure and method of a strained channel transistor and a second semiconductor component in an integrated circuit |
DE10345347A1 (de) * | 2003-09-19 | 2005-04-14 | Atmel Germany Gmbh | Verfahren zur Herstellung eines DMOS-Transistors mit lateralem Driftregionen-Dotierstoffprofil |
JP2006066691A (ja) * | 2004-08-27 | 2006-03-09 | Renesas Technology Corp | 半導体装置およびその製造方法 |
JP5172083B2 (ja) * | 2004-10-18 | 2013-03-27 | ルネサスエレクトロニクス株式会社 | 半導体装置及びその製造方法、並びにメモリ回路 |
US7256460B2 (en) * | 2004-11-30 | 2007-08-14 | Texas Instruments Incorporated | Body-biased pMOS protection against electrostatic discharge |
JP2006165012A (ja) | 2004-12-02 | 2006-06-22 | Renesas Technology Corp | 半導体装置及びその製造方法 |
US7422956B2 (en) * | 2004-12-08 | 2008-09-09 | Advanced Micro Devices, Inc. | Semiconductor device and method of making semiconductor device comprising multiple stacked hybrid orientation layers |
US7465972B2 (en) * | 2005-01-21 | 2008-12-16 | Taiwan Semiconductor Manufacturing Company, Ltd. | High performance CMOS device design |
JP4303209B2 (ja) * | 2005-02-04 | 2009-07-29 | 富士通株式会社 | 強誘電体素子及び強誘電体素子の製造方法 |
JP2006253317A (ja) * | 2005-03-09 | 2006-09-21 | Fujitsu Ltd | 半導体集積回路装置およびpチャネルMOSトランジスタ |
JP2006261227A (ja) * | 2005-03-15 | 2006-09-28 | Oki Electric Ind Co Ltd | 半導体装置及びその製造方法 |
JP4515305B2 (ja) * | 2005-03-29 | 2010-07-28 | 富士通セミコンダクター株式会社 | pチャネルMOSトランジスタおよびその製造方法、半導体集積回路装置の製造方法 |
KR100694470B1 (ko) * | 2005-07-11 | 2007-03-12 | 매그나칩 반도체 유한회사 | 이미지 센서 제조 방법 |
JP4984665B2 (ja) * | 2005-06-22 | 2012-07-25 | 富士通セミコンダクター株式会社 | 半導体装置およびその製造方法 |
CN100463143C (zh) * | 2005-07-07 | 2009-02-18 | 中芯国际集成电路制造(上海)有限公司 | 具有氧化物间隔层的应变源漏cmos的集成方法 |
US7348248B2 (en) * | 2005-07-12 | 2008-03-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | CMOS transistor with high drive current and low sheet resistance |
US7825473B2 (en) * | 2005-07-21 | 2010-11-02 | Industrial Technology Research Institute | Initial-on SCR device for on-chip ESD protection |
JP2007034553A (ja) | 2005-07-26 | 2007-02-08 | Sharp Corp | 情報処理装置 |
US8207523B2 (en) * | 2006-04-26 | 2012-06-26 | United Microelectronics Corp. | Metal oxide semiconductor field effect transistor with strained source/drain extension layer |
US7935590B2 (en) * | 2006-05-11 | 2011-05-03 | United Microelectronics Corp. | Method of manufacturing metal oxide semiconductor and complementary metal oxide semiconductor |
US8384138B2 (en) * | 2006-06-14 | 2013-02-26 | Texas Instruments Incorporated | Defect prevention on SRAM cells that incorporate selective epitaxial regions |
US7612364B2 (en) * | 2006-08-30 | 2009-11-03 | Taiwan Semiconductor Manufacturing Company, Ltd. | MOS devices with source/drain regions having stressed regions and non-stressed regions |
US7504301B2 (en) * | 2006-09-28 | 2009-03-17 | Advanced Micro Devices, Inc. | Stressed field effect transistor and methods for its fabrication |
US7709312B2 (en) * | 2006-09-29 | 2010-05-04 | Intel Corporation | Methods for inducing strain in non-planar transistor structures |
US7750338B2 (en) * | 2006-12-05 | 2010-07-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Dual-SiGe epitaxy for MOS devices |
US7381623B1 (en) * | 2007-01-17 | 2008-06-03 | International Business Machines Corporation | Pre-epitaxial disposable spacer integration scheme with very low temperature selective epitaxy for enhanced device performance |
US7691752B2 (en) * | 2007-03-30 | 2010-04-06 | Intel Corporation | Methods of forming improved EPI fill on narrow isolation bounded source/drain regions and structures formed thereby |
-
2007
- 2007-06-27 JP JP2007169023A patent/JP5286701B2/ja not_active Expired - Fee Related
-
2008
- 2008-06-02 TW TW097120490A patent/TWI460859B/zh active
- 2008-06-11 US US12/137,112 patent/US8039901B2/en active Active
- 2008-06-26 KR KR1020080060865A patent/KR101475364B1/ko active IP Right Grant
- 2008-06-27 CN CN2008101317526A patent/CN101335299B/zh active Active
-
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- 2011-09-21 US US13/238,580 patent/US8486793B2/en active Active
-
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- 2013-06-07 US US13/913,012 patent/US9070704B2/en active Active
-
2015
- 2015-03-19 US US14/662,351 patent/US9356146B2/en active Active
-
2016
- 2016-04-22 US US15/136,091 patent/US20160240674A1/en not_active Abandoned
-
2021
- 2021-10-04 US US17/493,392 patent/US20220029018A1/en active Pending
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0974188A (ja) * | 1995-09-05 | 1997-03-18 | Mitsubishi Electric Corp | 半導体装置及びその製造方法 |
WO2006006972A1 (en) * | 2004-06-24 | 2006-01-19 | International Business Machines Corporation | Improved strained-silicon cmos device and method |
JP2008504677A (ja) * | 2004-06-24 | 2008-02-14 | インターナショナル・ビジネス・マシーンズ・コーポレーション | 改良した歪みシリコンcmosデバイスおよび方法 |
WO2006023183A2 (en) * | 2004-08-24 | 2006-03-02 | Freescale Semiconductor, Inc. | Method and apparatus for performance enhancement in an asymmetrical semiconductor device |
JP2008511169A (ja) * | 2004-08-24 | 2008-04-10 | フリースケール セミコンダクター インコーポレイテッド | 非対称半導体装置の性能を向上させる方法及び装置 |
JP2006229071A (ja) * | 2005-02-18 | 2006-08-31 | Fujitsu Ltd | 半導体装置 |
JP2007110098A (ja) * | 2005-09-13 | 2007-04-26 | Infineon Technologies Ag | 応力変形させた半導体装置およびその製造方法 |
WO2007034553A1 (ja) * | 2005-09-22 | 2007-03-29 | Fujitsu Limited | 半導体装置およびその製造方法 |
JP2008060408A (ja) * | 2006-08-31 | 2008-03-13 | Toshiba Corp | 半導体装置 |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5141686B2 (ja) * | 2007-07-12 | 2013-02-13 | 富士通セミコンダクター株式会社 | 半導体デバイス及び半導体デバイスの製造方法 |
JP2011035393A (ja) * | 2009-07-29 | 2011-02-17 | Internatl Business Mach Corp <Ibm> | 埋め込み拡張領域を有するsoiトランジスタ、及びその形成方法 |
JP2011054740A (ja) * | 2009-09-01 | 2011-03-17 | Toshiba Corp | 半導体装置及びその製造方法 |
JP2011054972A (ja) * | 2009-09-03 | 2011-03-17 | Internatl Business Mach Corp <Ibm> | 集積回路構造及びその製造方法 |
JP2011066055A (ja) * | 2009-09-15 | 2011-03-31 | Fujitsu Semiconductor Ltd | 半導体装置とその製造方法 |
US8415224B2 (en) | 2010-08-25 | 2013-04-09 | Samsung Electronics Co., Ltd. | Method of fabricating a semiconductor device including forming trenches having particular structures |
US8604551B2 (en) | 2010-08-25 | 2013-12-10 | Samsung Electronics Co., Ltd. | Semiconductor device including trenches having particular structures |
EP2541793A1 (en) | 2011-06-27 | 2013-01-02 | Sony Corporation | Communication Apparatus and Communication System |
JP2013115113A (ja) * | 2011-11-25 | 2013-06-10 | Toshiba Corp | 半導体装置およびその製造方法 |
JP2016004963A (ja) * | 2014-06-19 | 2016-01-12 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
Also Published As
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US20130295741A1 (en) | 2013-11-07 |
US20150194526A1 (en) | 2015-07-09 |
CN101335299B (zh) | 2010-06-23 |
TW200908325A (en) | 2009-02-16 |
US20220029018A1 (en) | 2022-01-27 |
US8486793B2 (en) | 2013-07-16 |
KR20080114608A (ko) | 2008-12-31 |
CN101335299A (zh) | 2008-12-31 |
US8039901B2 (en) | 2011-10-18 |
US9070704B2 (en) | 2015-06-30 |
KR101475364B1 (ko) | 2014-12-22 |
US20120009753A1 (en) | 2012-01-12 |
TWI460859B (zh) | 2014-11-11 |
JP5286701B2 (ja) | 2013-09-11 |
US20160240674A1 (en) | 2016-08-18 |
US9356146B2 (en) | 2016-05-31 |
US20090001420A1 (en) | 2009-01-01 |
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