JP2016004963A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP2016004963A JP2016004963A JP2014126211A JP2014126211A JP2016004963A JP 2016004963 A JP2016004963 A JP 2016004963A JP 2014126211 A JP2014126211 A JP 2014126211A JP 2014126211 A JP2014126211 A JP 2014126211A JP 2016004963 A JP2016004963 A JP 2016004963A
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- 239000004065 semiconductor Substances 0.000 title claims description 74
- 238000009792 diffusion process Methods 0.000 claims abstract description 23
- 239000010410 layer Substances 0.000 claims description 225
- 239000000758 substrate Substances 0.000 claims description 58
- 125000006850 spacer group Chemical group 0.000 claims description 33
- 239000002344 surface layer Substances 0.000 claims description 25
- 239000012535 impurity Substances 0.000 claims description 13
- 230000003071 parasitic effect Effects 0.000 abstract description 14
- 238000009413 insulation Methods 0.000 abstract 3
- 239000003795 chemical substances by application Substances 0.000 description 59
- 238000005530 etching Methods 0.000 description 40
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- 238000004519 manufacturing process Methods 0.000 description 27
- 101100377797 Arabidopsis thaliana ABCC1 gene Proteins 0.000 description 24
- 101150025806 Est1 gene Proteins 0.000 description 24
- 239000013256 coordination polymer Substances 0.000 description 13
- 239000002184 metal Substances 0.000 description 11
- 229910052751 metal Inorganic materials 0.000 description 11
- 229910021332 silicide Inorganic materials 0.000 description 11
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 11
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 9
- 101150090425 SLD1 gene Proteins 0.000 description 9
- 239000000463 material Substances 0.000 description 9
- 230000004048 modification Effects 0.000 description 8
- 238000012986 modification Methods 0.000 description 8
- 229910004298 SiO 2 Inorganic materials 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 7
- 229920005591 polysilicon Polymers 0.000 description 7
- 229910052814 silicon oxide Inorganic materials 0.000 description 7
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 239000011229 interlayer Substances 0.000 description 4
- 238000005468 ion implantation Methods 0.000 description 4
- 238000002955 isolation Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 101100533625 Neurospora crassa (strain ATCC 24698 / 74-OR23-1A / CBS 708.71 / DSM 1257 / FGSC 987) drc-4 gene Proteins 0.000 description 3
- 101150033482 SLD2 gene Proteins 0.000 description 3
- 101100533627 Schizosaccharomyces pombe (strain 972 / ATCC 24843) drc1 gene Proteins 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- CEPICIBPGDWCRU-UHFFFAOYSA-N [Si].[Hf] Chemical compound [Si].[Hf] CEPICIBPGDWCRU-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
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Abstract
Description
図1は、第1の実施形態に係る半導体装置SDの構成を示す断面図である。半導体装置SDは、基板SUB上にメモリセル及びロジック回路が混載したものである。本図は、半導体装置SDのロジック回路を構成している部分を示している。なお、基板SUBは、半導体基板であり、具体的には、例えば、シリコン基板又はSOI(Silicon on Insulator)基板である。
図13は、第2の実施形態に係る半導体装置SDの構成を示す断面図であり、第1の実施形態の図2に対応する。図14は、図13のA−A´断面図であり、第1の実施形態の図3に対応する。本実施形態に係る半導体装置SDは、ソースSOC及びドレインDRNがエピタキシャル層EPI(半導体層)である点を除いて、第1の実施形態に係る半導体装置SDと同様の構成である。
図27は、第3の実施形態に係る半導体装置SDの構成を示す断面図であり、第2の実施形態の図13に対応する。図28は、図27のA−A´断面図であり、第2の実施形態の図14に対応する。本実施形態に係る半導体装置SDは、以下の点を除いて、第2の実施形態に係る半導体装置SDと同様の構成である。
CP キャップ絶縁膜
CP1 絶縁膜
CT コンタクト
DIF 拡散層
DL1 絶縁層
DL2 絶縁層
DRN ドレイン
EPI エピタキシャル層
EST1 エッチングストップ層
FOX フィールド酸化膜
GE ゲート電極
GI ゲート絶縁膜
GI1 絶縁膜
LDD LDD領域
OP 開口
PS ポリシリコン膜
REC 凹部
RF レジスト膜
SD 半導体装置
SLD1 シリサイド層
SLD2 シリサイド層
SOC ソース
SP1 絶縁膜
SP スペーサ膜
SUB 基板
SW サイドウォール
SW1 絶縁膜
TRE 溝
Claims (8)
- 基板と、
前記基板上に形成されたゲート電極と、
前記ゲート電極の側面に形成されたサイドウォールと、
前記基板に形成され、ソース及びドレインとなる不純物領域と、
前記ゲート電極、前記サイドウォール、及び前記不純物領域を覆う絶縁層と、
前記絶縁層を貫通して前記不純物領域に接続するコンタクトと、
前記サイドウォールと前記コンタクトの間に位置し、前記コンタクト側の側面が前記絶縁層を介して前記コンタクトと対向しているエアギャップと、
を備える半導体装置。 - 請求項1に記載の半導体装置において、
前記ゲート電極及び前記サイドウォールが平面視で第1方向に沿って延伸しており、
複数の前記コンタクトが平面視で前記第1方向に沿って配置され、
複数の前記エアギャップが、
前記サイドウォールと前記複数のコンタクトの間それぞれに設けられ、
前記第1方向に沿って互いに分離している半導体装置。 - 請求項1に記載の半導体装置において、
前記不純物領域は、前記基板の表面に開口を有する溝に埋め込まれた半導体層であり、
前記半導体層は、
表層が前記溝の前記開口に比して前記絶縁層の上面側に突出しており、
前記表層の上面側に行くにつれて前記表層の前記サイドウォール側の側面が前記サイドウォールから離れる半導体装置。 - 請求項1に記載の半導体装置において、
前記不純物領域は、前記基板の表層に形成された拡散層であり、
前記半導体装置は、前記ゲート電極の側面及び前記基板の表面に沿って形成されたスペーサ膜をさらに備え、
前記コンタクトは、
前記スペーサ膜を貫通して前記不純物領域に接続しており、
側面が前記コンタクトの底部において前記スペーサ膜と接している半導体装置。 - 基板と、
前記基板上に形成されたゲート電極と、
前記ゲート電極の側面に形成されたサイドウォールと、
前記基板に形成され、ソース及びドレインとなる不純物領域と、
前記ゲート電極、前記サイドウォール、及び前記不純物領域を覆う第1絶縁層と、
前記第1絶縁層を貫通して前記不純物領域に接続するコンタクトと、
前記第1絶縁層の表面に開口を有し、前記サイドウォールと前記コンタクトの間に位置する凹部と、
前記凹部に埋め込まれた第2絶縁層と、
前記第2絶縁層に形成され、前記サイドウォールと前記コンタクトの間に位置し、前記コンタクト側の側面が前記第2絶縁層を介して前記凹部の前記コンタクト側の内側面と対向するエアギャップと、
を備える半導体装置。 - 請求項5に記載の半導体装置において、
前記ゲート電極、前記サイドウォール、及び前記凹部が平面視で第1方向に沿って延伸しており、
複数の前記コンタクトが平面視で前記第1方向に沿って配置され、
平面視において、前記エアギャップは、前記コンタクトと前記サイドウォールによって前記第1方向と直交する第2方向に挟まれる領域から、他の前記コンタクトと前記サイドウォールによって前記第2方向に挟まれる領域まで、連続して形成されている半導体装置。 - 請求項5に記載の半導体装置において、
前記凹部は、前記ドレインと前記ソースの間で前記ゲート電極及び前記サイドウォールを跨って形成されており、
平面視において、前記エアギャップは、前記ソースと前記ゲート電極の間、及び前記ドレインと前記ゲート電極の間のそれぞれに位置している半導体装置。 - 請求項5に記載の半導体装置において、
前記不純物領域は、前記基板の表面に開口を有する溝に埋め込まれた半導体層であり、
前記半導体層は、
表層が前記溝の前記開口に比して前記第1絶縁層及び前記第2絶縁層の上面側に突出しており、
前記表層の上面側に行くにつれて前記表層の前記サイドウォール側の側面が前記サイドウォールから離れる半導体装置。
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