JP2009519610A - ソース領域とドレイン領域との間にボックス層を有する歪みシリコンmosデバイス - Google Patents
ソース領域とドレイン領域との間にボックス層を有する歪みシリコンmosデバイス Download PDFInfo
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- JP2009519610A JP2009519610A JP2008545707A JP2008545707A JP2009519610A JP 2009519610 A JP2009519610 A JP 2009519610A JP 2008545707 A JP2008545707 A JP 2008545707A JP 2008545707 A JP2008545707 A JP 2008545707A JP 2009519610 A JP2009519610 A JP 2009519610A
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- oxide
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- 239000010703 silicon Substances 0.000 title claims description 41
- 125000006850 spacer group Chemical group 0.000 claims abstract description 34
- 238000000034 method Methods 0.000 claims description 57
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- 229910000676 Si alloy Inorganic materials 0.000 claims description 28
- 238000005530 etching Methods 0.000 claims description 23
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- 239000000758 substrate Substances 0.000 claims description 15
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- 229910000577 Silicon-germanium Inorganic materials 0.000 claims description 7
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 6
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- 229910010271 silicon carbide Inorganic materials 0.000 claims description 5
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- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 4
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- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 4
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
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- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
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- H01—ELECTRIC ELEMENTS
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/107—Substrate region of field-effect devices
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
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- H01L29/165—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table including two or more of the elements provided for in group H01L29/16, e.g. alloys in different semiconductor regions, e.g. heterojunctions
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- H—ELECTRICITY
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L29/7848—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate the means being located in the source/drain region, e.g. SiGe source and drain
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L29/78639—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device with a drain or source connected to a bulk conducting substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78684—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising semiconductor materials of Group IV not being silicon, or alloys including an element of the group IV, e.g. Ge, SiN alloys, SiC alloys
- H01L29/78687—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising semiconductor materials of Group IV not being silicon, or alloys including an element of the group IV, e.g. Ge, SiN alloys, SiC alloys with a multilayer structure or superlattice structure
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- Computer Hardware Design (AREA)
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- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Thin Film Transistor (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
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Abstract
Description
ゲート誘電体上に配置されたゲート電極を有するゲートスタック;
ゲートスタックの両側面に形成された、第1のスペーサ及び第2のスペーサ;
第1のスペーサに近接するソース領域;
第2のスペーサに近接するドレイン領域;
ゲートスタックの下に位置し、且つソース領域及びドレイン領域の側面に位置するチャネル領域;及び
チャネル領域の下に位置し、且つソース領域及びドレイン領域の側面に位置する埋め込み酸化物領域;
を有する。
第1のシリコン層及び第2のシリコン層との間に配置された酸化物層を含むSOI基板を準備する工程;
第1のシリコン層上にトランジスタゲートスタックを形成する工程;
トランジスタゲートスタックの両側面に一対のスペーサを形成する工程;
一対のスペーサに隣接する第1のシリコン層の露出部分を、酸化物層が露出されるまで、等方性エッチングする工程であり、トランジスタゲートスタックの下にチャネル領域を形成する工程;
酸化物層の露出部分を、第2のシリコン層が露出されるまで、異方性エッチングする工程であり、チャネル領域の下に埋め込み酸化物領域を形成する工程;及び
ソース領域及びドレイン領域を形成するように、第2のシリコン層の露出部分上にシリコン合金を堆積する工程;
を有する。
Claims (21)
- ゲート誘電体上に配置されたゲート電極を有するゲートスタック;
前記ゲートスタックの両側面に形成された、第1のスペーサ及び第2のスペーサ;
前記第1のスペーサに近接するソース領域;
前記第2のスペーサに近接するドレイン領域;
前記ゲートスタックの下に位置し、且つ前記ソース領域及び前記ドレイン領域の側面に位置するチャネル領域;及び
前記チャネル領域の下に位置し、且つ前記ソース領域及び前記ドレイン領域の側面に位置する埋め込み酸化物領域;
を有する装置。 - 前記ゲート電極は、銅、ルテニウム、パラジウム、白金、コバルト、ニッケル、ルテニウム酸化物、タングステン、アルミニウム、チタン、タンタル、チタン窒化物、タンタル窒化物、ハフニウム、ジルコニウム、金属炭化物、及び導電性金属酸化物、の少なくとも1つを有する、請求項1に記載の装置。
- 前記ゲート誘電体は、ハフニウム酸化物、ハフニウムシリコン酸化物、ハフニウムシリコン酸窒化物、ランタン酸化物、ジルコニウム酸化物、ジルコニウムシリコン酸化物、タンタル酸化物、チタン酸化物、バリウムストロンチウムチタン酸化物、BST、バリウムチタン酸化物、ストロンチウムチタン酸化物、イットリウム酸化物、アルミニウム酸化物、鉛スカンジウムタンタル酸化物、鉛亜鉛ニオブ酸塩、及びPZT、から成るグループから選択されたhigh−k誘電体を有する、請求項2に記載の装置。
- 前記ソース領域及び前記ドレイン領域は、隆起ソース領域及び隆起ドレイン領域を有する、請求項1に記載の装置。
- 前記ソース領域及び前記ドレイン領域はシリコンゲルマニウムを有する、請求項1に記載の装置。
- 前記ソース領域及び前記ドレイン領域はシリコンカーバイドを有する、請求項1に記載の装置。
- 前記ソース領域及び前記ドレイン領域は、ボロン、アルミニウム、ヒ素、リン、及びアンチモンのうちの少なくとも1つでドープされている、請求項5又は6に記載の装置。
- 前記ソース領域及び前記ドレイン領域は、前記チャネル領域に圧縮歪みを与えることが可能なシリコン合金を有する、請求項1に記載の装置。
- 前記ソース領域及び前記ドレイン領域は、前記チャネル領域に引張歪みを与えることが可能なシリコン合金を有する、請求項1に記載の装置。
- 前記ソース領域は、前記第1のスペーサの下に位置し且つ横方向で前記ゲートスタックの側面に近接する第1のアンダーカット領域を含み、前記ドレイン領域は、前記第2のスペーサの下に位置し且つ横方向で前記ゲートスタックの側面に近接する第2のアンダーカット領域を含む、請求項1に記載の装置。
- 前記埋め込み酸化物領域は、二酸化シリコン、炭素ドープ酸化物、有機高分子、PFCB、オキシナイトライド、及びFSG、から成るグループから選択された酸化物を有する、請求項1に記載の装置。
- 前記埋め込み酸化物領域は窒素ドープされている、請求項11に記載の装置。
- 第1のシリコン層及び第2のシリコン層との間に配置された酸化物層を含むSOI基板を準備する工程;
前記第1のシリコン層上にトランジスタゲートスタックを形成する工程;
前記トランジスタゲートスタックの両側面に一対のスペーサを形成する工程;
前記一対のスペーサに隣接する前記第1のシリコン層の露出部分を、前記酸化物層が露出されるまで、等方性エッチングする工程であり、前記トランジスタゲートスタックの下にチャネル領域を形成する工程;
前記酸化物層の露出部分を、前記第2のシリコン層が露出されるまで、異方性エッチングする工程であり、前記チャネル領域の下に埋め込み酸化物領域を形成する工程;及び
ソース領域及びドレイン領域を形成するように、前記第2のシリコン層の露出部分上にシリコン合金を堆積する工程;
を有する方法。 - 前記等方性エッチングする工程は、前記一対のスペーサの下に位置し且つ横方向で前記トランジスタゲートスタックの側面に近接する一対のアンダーカット領域を形成する、請求項13に記載の方法。
- 前記酸化物層は、二酸化シリコン、炭素ドープ酸化物、有機高分子、PFCB、オキシナイトライド、及びFSG、から成るグループから選択された酸化物を有する、請求項13に記載の方法。
- 前記ソース領域及び前記ドレイン領域は、前記チャネル領域及び前記埋め込み酸化物領域によって隔てられる、請求項13に記載の方法。
- 前記シリコン合金を堆積する工程はシリコンゲルマニウムを堆積する工程を有する、請求項13に記載の方法。
- 前記シリコンゲルマニウムを堆積する工程は、シリコンゲルマニウムをボロン及びアルミニウムのうちの少なくとも1つでドープするその場ドーピングプロセスを含む、請求項17に記載の方法。
- 前記シリコン合金を堆積する工程はシリコンカーバイドを堆積する工程を有する、請求項13に記載の方法。
- 前記シリコンカーバイドを堆積する工程は、シリコンカーバイドをヒ素、リン、及びアンチモンのうちの少なくとも1つでドープするその場ドーピングプロセスを含む、請求項19に記載の方法。
- 前記シリコン合金は、隆起ソース領域及び隆起ドレイン領域を形成するように堆積される、請求項17又は19に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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US11/304,351 US7422950B2 (en) | 2005-12-14 | 2005-12-14 | Strained silicon MOS device with box layer between the source and drain regions |
US11/304,351 | 2005-12-14 | ||
PCT/US2006/047139 WO2007102870A2 (en) | 2005-12-14 | 2006-12-06 | Strained silicon mos device with box layer between the source and drain regions |
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JP2009519610A true JP2009519610A (ja) | 2009-05-14 |
JP5122476B2 JP5122476B2 (ja) | 2013-01-16 |
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US (1) | US7422950B2 (ja) |
JP (1) | JP5122476B2 (ja) |
KR (1) | KR101124920B1 (ja) |
CN (1) | CN101292334B (ja) |
DE (1) | DE112006003402B4 (ja) |
TW (1) | TWI327777B (ja) |
WO (1) | WO2007102870A2 (ja) |
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KR101124920B1 (ko) | 2012-03-27 |
CN101292334B (zh) | 2012-04-25 |
TWI327777B (en) | 2010-07-21 |
WO2007102870A3 (en) | 2007-12-06 |
JP5122476B2 (ja) | 2013-01-16 |
WO2007102870A2 (en) | 2007-09-13 |
US7422950B2 (en) | 2008-09-09 |
US20070134859A1 (en) | 2007-06-14 |
CN101292334A (zh) | 2008-10-22 |
KR20080069683A (ko) | 2008-07-28 |
DE112006003402T5 (de) | 2008-10-23 |
DE112006003402B4 (de) | 2010-01-28 |
TW200742073A (en) | 2007-11-01 |
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