JP2017037957A - 半導体装置およびその製造方法 - Google Patents
半導体装置およびその製造方法 Download PDFInfo
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- JP2017037957A JP2017037957A JP2015158206A JP2015158206A JP2017037957A JP 2017037957 A JP2017037957 A JP 2017037957A JP 2015158206 A JP2015158206 A JP 2015158206A JP 2015158206 A JP2015158206 A JP 2015158206A JP 2017037957 A JP2017037957 A JP 2017037957A
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- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78651—Silicon transistors
- H01L29/78654—Monocrystalline silicon transistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
- H01L27/1207—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI combined with devices in contact with the semiconductor body, i.e. bulk/SOI hybrid circuits
Abstract
Description
本明細書でいう「関連技術」は、新規に発明者が見出した課題を有する技術であって、公知である従来技術ではないが、新規な技術的思想の前提技術(未公知技術)を意図して記載された技術である。
図2は、本実施の形態における半導体装置のデバイス構造を示す断面図である。本実施の形態における半導体装置は、例えば、nチャネル型電界効果トランジスタとpチャネル型電界効果トランジスタとを含むが、特に、図2では、nチャネル型電界効果トランジスタQ1が形成されているトランジスタ形成領域ARと、p型ウェルPWLに給電を行なう給電領域BRとが図示されている。
次に、本実施の形態における特徴点について説明する。本実施の形態における特徴点は、例えば、図2に示すように、素子分離部STIにおいて、SOI基板の上面(シリコン層SILの表面)と略同一の高さから突出した突出部PJUを有している点にある。すなわち、本実施の形態における特徴点は、SOI基板から突出し、かつ、積み上げ層PULと接触する突出部PJUが素子分離部STIに形成されている点にある。
実施の形態における技術的思想は、以下に示す変形例1の構成としても具現化することができる。図4は、本変形例1において、素子分離部STIと活性領域との境界領域近傍の領域を拡大して示す模式的な断面図である。図4に示すように、シリコン層SILの表面を基準にして、素子分離部STIから上方に突出するように突出部PJUが設けられており、この突出部PJUの端面が垂直面となっている。このように構成されている本変形例1においても、積み上げ層PULの端部の膜厚を積み上げ層PULのその他の部分の膜厚と同程度にすることができる。すなわち、突出部PJUの高さh2を、積み上げ層PULの厚さh1と同程度とすることができる。これにより、本変形例1においても、積み上げ層PULの端部が「ファセット構造」をしていないため、埋め込み絶縁層BOXやp型ウェルPWL内への導電型不純物の注入が抑制される。この結果、本変形例1においても、半導体装置の信頼性向上および性能向上を図ることができる。
実施の形態における技術的思想は、以下に示す変形例2の構成としても具現化することができる。図5は、本変形例2において、素子分離部STIと活性領域との境界領域近傍の領域を拡大して示す模式的な断面図である。図5に示すように、シリコン層SILの表面を基準にして、素子分離部STIから上方に突出するように突出部PJUが設けられており、この突出部PJUの端面が垂直面となっている。ここで、本変形例2では、突出部PJUの端部が垂直形状をしていることを前提として、例えば、突出部PJUの高さh2が積み上げ層PULの高さh1よりも、埋め込み絶縁層BOXの膜厚の分だけ低くなっている。このように構成されている本変形例2においても、積み上げ層PULの端部の膜厚を積み上げ層PULのその他の部分の膜厚と同程度にすることができる。これにより、本変形例2においても、積み上げ層PULの端部が「ファセット構造」をしていないため、埋め込み絶縁層BOXやp型ウェルPWL内への導電型不純物の注入が抑制される。言い換えれば、積み上げ層PULは素子分離部STIの側面に沿って形成されている。そして、積み上げ層PULは、素子分離部STIの上面に達した後は、上方向であり、且つ、素子分離部STIと離れる方向に向かって連続的に傾斜するように形成されている。つまり、積み上げ層PULは、素子分離部STIの上面に達するまでの下部領域においては素子分離部STIの形状に沿って形成され、素子分離部STIの上面より高い位置である上部領域においては「ファセット構造」を構成している。この結果、本変形例2においても、半導体装置の信頼性向上および性能向上を図ることができる。
本実施の形態における半導体装置は、上記のように構成されており、以下に、その製造方法について、図面を参照しながら説明する。
AR トランジスタ形成領域
BOX 埋め込み絶縁層
BR 給電領域
CIL コンタクト層間絶縁膜
CNT コンタクトホール
EX エクステンション領域
GE ゲート電極
GOX ゲート絶縁膜
IL 層間絶縁膜
L1 配線
NR1 n型半導体領域
NR2 n型半導体領域
OXF 酸化シリコン膜
PJU 突出部
PLG プラグ
PR1 p型半導体領域
PR2 p型半導体領域
PUL 積み上げ層
Q1 nチャネル型電界効果トランジスタ
SF 金属シリサイド膜
SIL シリコン層
SNF 窒化シリコン膜
STI 素子分離部
SW1 サイドウォールスペーサ
SW2 サイドウォールスペーサ
Claims (18)
- 基板層と、前記基板層上に形成された絶縁層と、前記絶縁層上に形成されたシリコン層とからなるSOI基板と、
前記シリコン層と前記絶縁層とを貫通して前記基板層に達する素子分離部と、
前記素子分離部で区画された活性領域に形成された電界効果トランジスタと、
を備え、
前記電界効果トランジスタは、
前記シリコン層内のチャネル領域と、
前記チャネル領域上に形成されたゲート絶縁膜と、
前記ゲート絶縁膜上に形成されたゲート電極と、
前記シリコン層上に形成された積み上げ層と、
を有し、
前記素子分離部は、前記SOI基板から突出し、かつ、前記積み上げ層と接触する突出部を有し、
前記シリコン層の表面を基準として、前記突出部の上面の高さは、前記積み上げ層の上面の高さ以下で、かつ、前記積み上げ層の上面の高さの1/2以上である、半導体装置。 - 請求項1に記載の半導体装置において、
前記突出部の端部は、テーパ形状である、半導体装置。 - 請求項2に記載の半導体装置において、
前記テーパ形状のテーパ角は、45°以上である、半導体装置。 - 請求項1に記載の半導体装置において、
前記突出部の端面は、垂直面である、半導体装置。 - 請求項4に記載の半導体装置において、
前記シリコン層の表面を基準として、前記突出部の上面の高さは、前記積み上げ層の上面の高さよりも、前記絶縁層の厚さの分だけ低い、半導体装置。 - 請求項1に記載の半導体装置において、
前記積み上げ層は、前記電界効果トランジスタのソース領域の一部、あるいは、前記電界効果トランジスタのドレイン領域の一部を構成している、半導体装置。 - 請求項1に記載の半導体装置において、
前記積み上げ層には、導電型不純物が導入されている、半導体装置。 - 請求項7に記載の半導体装置において、
前記絶縁層には、前記導電型不純物が導入されていない、半導体装置。 - 請求項1に記載の半導体装置において、
前記積み上げ層の上面には、シリサイド膜が形成され、
前記積み上げ層は、前記シリサイド膜を介して、プラグと電気的に接続されている、半導体装置。 - 請求項1に記載の半導体装置において、
前記電界効果トランジスタは、完全空乏型トランジスタである、半導体装置。 - (a)基板層と、前記基板層上に形成された絶縁層と、前記絶縁層上に形成されたシリコン層とからなるSOI基板を用意する工程、
(b)前記シリコン層上に第1絶縁膜を形成する工程、
(c)前記(b)工程の後、前記第1絶縁膜と前記シリコン層と前記絶縁層とを貫通して前記基板層に達する素子分離部を前記SOI基板に形成する工程、
(d)前記(c)工程の後、前記第1絶縁膜に対してエッチングを施すことにより、前記素子分離部に前記SOI基板から突出した突出部を形成する工程、
(e)前記(d)工程の後、前記素子分離部で区画された活性領域内の前記シリコン層上にゲート絶縁膜を形成する工程、
(f)前記ゲート絶縁膜上にゲート電極を形成する工程、
(g)前記(f)工程の後、前記シリコン層上に積み上げ層を形成する工程、
(h)前記(g)工程の後、前記積み上げ層に導電型不純物を導入する工程、
を備え、
前記(g)工程において、
前記積み上げ層は、前記突出部と接触し、
前記シリコン層の表面を基準として、前記積み上げ層の上面の高さは、前記突出部の上面の高さよりも高く、かつ、2倍以下である、半導体装置の製造方法。 - 請求項11に記載の半導体装置の製造方法において、
前記(g)工程は、選択エピタキシャル法を使用することにより、前記シリコン層上に前記積み上げ層を形成する、半導体装置の製造方法。 - 請求項11に記載の半導体装置の製造方法において、
前記(d)工程は、前記第1絶縁膜に対してウェットエッチングを施すことにより、前記素子分離部に前記SOI基板から突出した前記突出部を形成する、半導体装置の製造方法。 - 請求項11に記載の半導体装置の製造方法において、
(i)前記(f)工程と前記(g)工程との間に、前記ゲート電極の側壁に第1サイドウォールを形成する工程を有し、
前記(h)工程は、
(h1)前記第1サイドウォールを除去する工程、
(h2)前記第1サイドウォールを除去することにより露出する前記シリコン層と、前記積み上げ層の一部とに第1ドーズ量で前記導電型不純物を導入する工程、
(h3)前記(h2)工程の後、前記ゲート電極の側壁に第2サイドウォールを形成する工程、
(h4)前記(h3)工程の後、前記積み上げ層と、前記積み上げ層の下層にある前記シリコン層とにわたって、前記第1ドーズ量よりも高い第2ドーズ量で前記導電型不純物を導入する工程、
を有する、半導体装置の製造方法。 - 基板、前記基板上に形成された絶縁層、及び、前記絶縁層上に形成されたシリコン層を有するSOI基板と、
前記シリコン層及び前記絶縁層を貫通して前記基板に達する素子分離部と、
前記素子分離部で区画された前記シリコン層に形成された電界効果トランジスタと、を備え、
前記電界効果トランジスタのゲート電極と前記素子分離部との間の前記シリコン層上には、シリコンを含む積み上げ層が形成されており、
前記素子分離部は、前記シリコン層の表面を基準として突出している突出部を有し、
前記突出部の端部には、上方向であって、且つ、前記素子分離部の中央に向かう方向に対して連続的に傾斜している傾斜面が形成されており、
前記積み上げ層は前記傾斜面に沿って形成されている、半導体装置。 - 請求項15に記載の半導体装置において、
前記積み上げ層は、前記素子分離部の上面より低い下部領域においては前記素子分離部に沿って形成されており、前記素子分離部の上面より高い上部領域においてはファセット構造を構成している、半導体装置。 - 請求項16に記載の半導体装置において、
前記ファセット構造は、上方向であり、且つ、前記素子分離部と離れる方向に向かって連続的に傾斜するように形成されている部分を有する、半導体装置。 - 請求項15に記載の半導体装置において、
前記積み上げ層、及び、前記積み上げ層下の前記シリコン層に不純物が導入されていることによって、前記電界効果トランジスタのソース領域の一部、または、前記電界効果トランジスタのドレイン領域の一部が構成されている、半導体装置。
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KR20150011070A (ko) | 2013-07-22 | 2015-01-30 | 동우 화인켐 주식회사 | 스페이서 형성용 감광성 수지 조성물 및 이를 이용한 스페이서 |
JP6355460B2 (ja) * | 2014-07-08 | 2018-07-11 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
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2015
- 2015-08-10 JP JP2015158206A patent/JP2017037957A/ja active Pending
-
2016
- 2016-06-07 US US15/176,146 patent/US20170047403A1/en not_active Abandoned
- 2016-06-16 TW TW105118960A patent/TW201707134A/zh unknown
- 2016-07-20 CN CN201610576209.1A patent/CN106449650A/zh active Pending
- 2016-08-02 EP EP16182298.6A patent/EP3131119A1/en not_active Withdrawn
- 2016-08-05 KR KR1020160100091A patent/KR20170018781A/ko unknown
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JP2007103456A (ja) * | 2005-09-30 | 2007-04-19 | Toshiba Corp | 半導体装置及びその製造方法 |
JP2014038878A (ja) * | 2012-08-10 | 2014-02-27 | Renesas Electronics Corp | 半導体装置およびその製造方法 |
US20140357039A1 (en) * | 2013-05-31 | 2014-12-04 | Stmicroelectronics, Inc. | Method for the formation of a protective dual liner for a shallow trench isolation structure |
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JP2018142575A (ja) * | 2017-02-27 | 2018-09-13 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法および半導体装置 |
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EP3131119A1 (en) | 2017-02-15 |
CN106449650A (zh) | 2017-02-22 |
KR20170018781A (ko) | 2017-02-20 |
US20170047403A1 (en) | 2017-02-16 |
TW201707134A (zh) | 2017-02-16 |
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