TWI672815B - 金氧半導體電晶體與形成閘極佈局圖的方法 - Google Patents

金氧半導體電晶體與形成閘極佈局圖的方法 Download PDF

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TWI672815B
TWI672815B TW104133652A TW104133652A TWI672815B TW I672815 B TWI672815 B TW I672815B TW 104133652 A TW104133652 A TW 104133652A TW 104133652 A TW104133652 A TW 104133652A TW I672815 B TWI672815 B TW I672815B
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gate
metal
semiconductor transistor
oxide
item
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TW201714306A (zh
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蕭世楹
楊慶忠
李文芳
李年中
王智充
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聯華電子股份有限公司
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Priority to US14/952,877 priority patent/US9761657B2/en
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Priority to US15/667,633 priority patent/US10290718B2/en
Priority to US15/668,708 priority patent/US10204996B2/en
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Abstract

本發明提供一種金氧半導體電晶體，其包含有一基底、一閘極絕緣層、一金屬閘極、至少一絕緣插塞元件以及二摻雜區。該閘極絕緣層設於該基底表面，該金屬閘極設於該閘極絕緣層上，其中該金屬閘極內具有至少一插塞孔洞，且該金屬閘極之操作電壓大於5伏特。該絕緣插塞元件係設於該插塞孔洞中，該側壁子係覆蓋該金屬閘極之側壁表面，而該等摻雜區設於該基底內並分別位於該金屬閘極之兩側。

Description

金氧半導體電晶體與形成閘極佈局圖的方法
本發明係關於一種金氧半導體電晶體之結構以及形成閘極佈局圖的方法，尤指一種能改善閘極碟形下陷(dishing)問題之形成閘極佈局圖的方法及相關的金氧半導體電晶體之結構。
隨著科技發展，半導體積體電路(integrated circuit，IC)相關產業與技術已快速成長。其中，由於高壓金氧半導體(high voltage metal-oxide-semiconductor，HVMOS)電晶體元件可同時承受一般電力系統所提供之高電壓以及具有開關的特性，故已被廣地應用在中央處理器電源供應系統(CPU power supply system)、電管理系統(power management system)、直流/交流轉換器(AC/DC converter)、LCD與電漿電視驅動器、車用電子、電腦週邊、小尺寸直流馬達控制器、以及消費性電子產品等領域。
另一方面，隨著元件尺寸不斷限縮，金屬閘極已逐漸取代了傳統多晶矽材料作為匹配高介電常數介電層的控制電極。當金屬閘極被應用至記憶體或高壓元件等特殊元件時，常會出現製程整合的問題。
本發明的目的之一在於提供一種金氧半導體電晶體以及形成閘極佈局圖的方法，其中本發明形成閘極佈局圖的方法係設計具有絕緣插塞元件之金氧半導體電晶體，以在金屬閘極的製作製程中不易產生碟形下陷問題。
本發明之實施例提供一種金氧半導體電晶體，其包含有一基底、一閘極絕緣層、一金屬閘極、至少一絕緣插塞元件以及二摻雜區。該閘極絕緣層設於該基底表面，而該金屬閘極設於該閘極絕緣層上，其中該金屬閘極內具有至少一插塞孔洞，且該金屬閘極之操作電壓大於5伏特(v)。該絕緣插塞元件係設於該插塞孔洞中，而該等摻雜區設於該基底內並分別位於該金屬閘極之兩側。
本發明之實施例另提供一種金氧半導體電晶體，其包含有一基底、一閘極絕緣層、一金屬閘極、至少一絕緣插塞元件以及二摻雜區。該閘極絕緣層設於該基底表面，而該金屬閘極設於該閘極絕緣層上，其中該金屬閘極之長與寬的至少其中一者大於等於約320奈米，且該金屬閘極內具有至少一插塞孔洞。該絕緣插塞元件係設於該插塞孔洞中，而該等摻雜區設於該基底內並分別位於該金屬閘極之兩側。
本發明之實施例還另提供一種形成閘極佈局圖的方法，該方法包含提供一閘極佈局設計圖，其中該閘極佈局設計圖包含至少一閘極圖案，且當該閘極圖案的長與寬之其中任一者大於等於一預定尺寸時，於該閘極圖案中設置至少一絕緣插塞元件圖案，以形成一修正閘 極佈局圖，其中該預定尺寸係由一製程能力極限所決定，該製程能力極限係指對閘極進行化學機械研磨時會使閘極發生碟形下陷之最小閘極尺寸，然後將該修正閘極佈局圖輸出製作於一光罩中。
由於本發明金氧半導體電晶體包含設置於閘極內的絕緣插塞元件，因此在對閘極進行CMP製程時，絕緣插塞元件可以當作研磨製程之停止層使用，以避免閘極發生碟形下陷，進而改善閘極結構與電晶體的電性表現。
100、1001、1002、1003‧‧‧金氧半導體電晶體
102‧‧‧基底
104、104’‧‧‧閘極絕緣層
105‧‧‧高介電常數層
106‧‧‧功函數層
108‧‧‧金屬層
110‧‧‧絕緣插塞元件
112‧‧‧側壁子
114‧‧‧CESL
116‧‧‧ILD層
118‧‧‧摻雜區
1181、1182‧‧‧N+型摻雜區
120‧‧‧STI元件
122‧‧‧漂移區
124‧‧‧閘極
126‧‧‧輕摻雜區
127‧‧‧P型摻雜區
128‧‧‧P型井
130‧‧‧鰭狀結構
132‧‧‧磊晶層
134‧‧‧金屬閘極結構
134a‧‧‧插塞孔洞
136‧‧‧P型井
200‧‧‧閘極佈局設計圖
200’‧‧‧修正閘極佈局圖
210、310‧‧‧絕緣插塞元件圖案
224、324‧‧‧閘極圖案
300‧‧‧光罩
L1、L2‧‧‧長度
L’‧‧‧長
M‧‧‧直行
S1~S3‧‧‧步驟
W1‧‧‧寬度
W’‧‧‧寬
第1圖為本發明金氧半導體電晶體之第一實施例的結構俯視示意圖。
第2圖為第1圖所示金氧半導體電晶體沿著剖面線2-2’的局部剖面示意圖。
第3圖為本發明金氧半導體電晶體第一實施例之第一變化形的結構俯視示意圖。
第4圖為第3圖所示金氧半導體電晶體沿著剖面線4-4’的局部剖面示意圖。
第5圖為本發明金氧半導體電晶體第一實施例之第二變化形的結構俯視示意圖。
第6圖為本發明金氧半導體電晶體第二實施例之局部剖面示意圖。
第7圖為本發明金氧半導體電晶體第三實施例之局部剖面示意圖。
第8圖為本發明金氧半導體電晶體第四實施例之局部剖面示意圖。
第9圖為本發明形成閘極佈局圖的方法的製程步驟圖。
第10圖至第12圖為閘極佈局圖案設計的示意圖。
為使熟習本發明所屬技術領域之一般技藝者能更進一步瞭解本發明，下文特列舉本發明之較佳實施例，並配合所附圖式，詳細說明本發明的構成內容及所欲達成之功效。
請參考第1圖與第2圖，第1圖為本發明金氧半導體電晶體之第一實施例的俯視示意圖，而第2圖為第1圖所示金氧半導體電晶體沿著剖面線2-2’的局部剖面示意圖。如第1圖所示，根據本發明之第一實施例，本發明金氧半導體電晶體100係為一高壓金氧半導體電晶體，舉例而言，其操作電壓為大於5伏特(v)例如數十伏特及/或其崩潰電壓(break down voltage)大於10伏特例如數十伏特甚至數百伏特。再者，本實施例之金氧半導體電晶體100係為具有金屬閘極結構134之電晶體，亦即閘極結構主要由金屬材料、合金或金屬化合物所構成。本發明之金氧半導體電晶體100包含一基底102、一閘極絕緣層104、一閘極124、至少二側壁子112、二摻雜區118以及至少一絕緣插塞元件110，其中為使圖式簡單易讀，第1圖省略了金氧半導體電晶體100之部分元件，僅繪示出部分基底102、閘極124、漂移區122、當作源極/汲極的摻雜區118和絕緣插塞元件110。以下將依序介紹金氧半導體電晶體100之各元件。基底102可以例如是一矽基底、一含矽基底(例如SiC)、一三五族基底(例如GaN)、一三五族覆矽基底(例如GaN-on-silicon)、一石墨烯覆矽基底(graphene-on-silicon)、一矽覆絕緣(silicon-on-insulator,SOI)基底、一含磊晶層之基底或其他合適的半導體基底等，但不限於 此。基底102表面可選擇性地設置淺溝絕緣(shallow trench isolation，STI)元件120，以在相鄰的STI元件120之間定義出通道區。基底102表面的通道區設置了閘極絕緣層104，本實施例HV金氧半導體電晶體100之閘極絕緣層104的厚度範圍為數百埃(angstrom)至一千多埃，其材料例如是二氧化矽，但不以此為限，並且，由於金氧半導體電晶體100包含金屬閘極結構134，因此金氧半導體電晶體100可選擇性地另包含一高介電常數(high dielectric constant，HK)層105，與閘極絕緣層104一同作用提供閘極介電之功能。金屬閘極結構134包含閘極124，設於閘極絕緣層104上，其中閘極124可包含複數層膜層，例如可包括金屬層108以及位於金屬層108與閘極絕緣層104之間的功函數層106。需注意的是，金屬閘極結構134還可包含其他未繪示於第2圖中的膜層，例如包含複數層阻障層、蝕刻停止層、介面調整層等。因應不同導電類型(如p或n型)的電晶體，功函數層106可選擇不同的材料或材料組合。再者，金氧半導體電晶體100的側壁子112至少設於閘極124之兩側並覆蓋閘極124之側壁表面，摻雜區118設於基底102內並分別位於閘極124之兩側，且本實施例中的摻雜區118位於STI元件120相反於閘極124之一側，用來當作金氧半導體電晶體100的源極與汲極。金氧半導體電晶體100可選擇性地另包含一或兩個經摻雜之漂移區(drifting reigon)122，位於閘極124兩側下方的基底102內，與閘極124部分重疊且包圍STI元件120的外圍，以提供電子漂移路徑。一般而言，摻雜區118與漂移區122具有相同的導電性，例如本實施例之摻雜區118為N+摻雜區，而漂移區122為N摻雜區。需注意的是，閘極124的尺寸具有長度L1與寬度W1，且本發明閘極124的長度L1與寬度W1之至少其中一者係大於等於約320奈米，例如本實施例之長度L1舉例為2500奈米，寬度W1舉 例為50000奈米，但不以此為限。此外，摻雜區118、漂移區122和STI元件120係設置於基底102的P型井136中，亦即閘極絕緣層104下側的通道區與摻雜區118有相反的導電性。
再者，金屬閘極結構134中另設置有至少一絕緣插塞元件110，位於閘極124內的至少一插塞孔洞134a內。由第1圖可知，本實施例的閘極124中具有複數個插塞孔洞134a，而金屬閘極結構134中包含了複數個絕緣插塞元件110分別設於一插塞孔洞134a，且本實施例的絕緣插塞元件110係呈魚骨狀排列於閘極124中。絕緣插塞元件110係由填入插塞孔洞134a中的絕緣材料層所構成，例如覆蓋在插塞孔洞134a表面的側壁子112材料。此外，金氧半導體電晶體100可選擇性地另包含一接觸洞蝕刻停止層(contact etch stop layer，CESL)114以及一層間介電(inter-layer dielectric，ILD)層116設於基底102表面。CESL 114係覆蓋於閘極124的側壁表面，且本實施例之CESL 114更進一步填入插塞孔洞134a中構成絕緣插塞元件110之一部分。換言之，本發明之絕緣插塞元件110可由側壁子112與CESL 114的一部分所構成。然而，在變化實施例中，若插塞孔洞134a有更大之尺寸，那麼ILD層116也可能會填入插塞孔洞134a中，此時絕緣插塞元件110則由側壁子112、CESL 114及ILD層116的一部分所構成。此外，ILD層116係設於金屬閘極結構134之外圍而使金屬閘極結構134與其他電子元件相隔離。再者，金氧半導體電晶體100還可選擇性地包含其他接觸元件(圖未示)，設置在金屬閘極結構134之上及/或鄰近，用來電連接於閘極124或摻雜區118，且上述接觸元件的設置位置較佳避開絕緣插塞元件110。
值得注意的是，本實施例在閘極124內設置絕緣插塞元件110 之設計係以避免閘極124在進行閘極CMP製程時發生碟形下陷為原則。例如，若現行CMP製程的製程能力極限的最大值是2微米不發生碟形下陷，那麼當金屬閘極124的長度L或寬度W任一者大於2微米時，若對金屬閘極124進行CMP製程便會在其表面造成碟形下陷，因此，根據本發明之精神，較佳設計使任兩個相鄰的絕緣插塞元件110的距離要小於等於製程能力極限2微米。另一方面，絕緣插塞元件110的尺寸(亦即插塞孔洞134a的直徑)係以避免因尺寸過大而產生邊緣(fringe)電壓為原則，因此可以設計具有較小的尺寸，例如絕緣插塞元件110的尺寸或直徑可以為約80至120奈米，但不以此為限。
本實施例製作金屬閘極結構134之方法係採用後閘極(gate-last)製程以及先HK層(HK-first)製程，亦即先在基底102表面形成高介電常數層與多晶矽層，然後以包含有閘極圖案與插塞孔洞圖案的光罩進行微影暨蝕刻製程以圖案化多晶矽層與高介電常數層，同時形成多晶矽虛置閘極與插塞孔洞134a。然而，在變化實施例中，閘極圖案與插塞孔洞圖案也可以不同微影製程分別定義。之後，再進行電晶體中其他元件的製程，例如，在虛置閘極側壁與插塞孔洞134a內形成側壁子112與CESL 114、形成ILD層116以及進行CMP製程等，接著再將多晶矽虛置閘極移除以形成閘極溝渠，沉積金屬材料而於閘極溝渠填入金屬層，再進行CMP製程而移除ILD層116之上的金屬材料。因此，如第2圖所示，本發明之絕緣插塞元件110、閘極124與ILD層116的頂面係實質上共平面。然而，本發明在閘極中設有絕緣插塞元件110之設計並不限於上述製程，例如也可應用於後HK層(HK-last)製程，亦即高介電常數層係在移除虛置閘極之後才製作。除此之外，本發明在閘極中設有絕緣插塞元件110之設計亦可用於非平面電晶體之製程如雙閘極鰭狀電晶體(Dual-gate FinFET)或三閘極鰭狀電晶體 (Tri-gate FinFET)之製程。
由上述可知，本發明同時提供了一種形成閘極佈局圖的方法，請參考第9圖至第12圖，其中第9圖為本發明形成閘極佈局圖之方法的製程步驟圖，而第10圖至第12圖為閘極佈局圖圖案設計的示意圖。本發明形成閘極佈局圖的方法包含以下步驟：
步驟S1：首先提供一閘極佈局設計圖200，其包含至少一閘極圖案224，如第10圖所示。
步驟S2：當閘極圖案224的長L’與寬W’之其中任一者大於等於一預定尺寸時，於閘極圖案224中設置至少一絕緣插塞元件圖案210，以形成一修正閘極佈局圖200’，其中該預定尺寸係由一製程能力極限所決定，該製程能力極限係指對閘極進行化學機械研磨時會使閘極發生碟形下陷(dishing)之最小閘極尺寸，如第11圖所示。本實施例係以預定尺寸為320奈米為例，但不以此為限。再者，本實施例係於閘極圖案224中設置複數個絕緣插塞元件圖案210，並且使任兩相鄰之絕緣插塞元件圖案210的距離小於等於該預定尺寸。
步驟S3：將修正閘極佈局圖200’的圖案輸出製作於一光罩300中，如第12圖所示，光罩300中包含閘極圖案324以及絕緣插塞元件圖案310，分別對應於修正閘極佈局圖200’中的閘極圖案224與絕緣插塞元件圖案210。
接著，可將光罩300應用於一微影製程中，使修正閘極佈局圖200’轉移至一材料層上，例如前述之多晶矽材料層。需注意的是，在設計絕緣插塞元件圖案210時，其尺寸可決定於微影製程之最小曝光極限尺 寸，亦即可設計使絕緣插塞元件圖案210的尺寸大於等於微影製程可以曝出之最小尺寸。然而，絕緣插塞元件圖案210也可依需要而設計成具有較大的尺寸，其尺寸與密度以不影響閘極電性表現為原則。此外，根據上述本發明設置絕緣插塞元件110之方法，絕緣插塞元件110之間的間距以及在長度L1的方向上設置絕緣插塞元件110的數量並不會對金氧半導體電晶體100有明顯的電性影響，例如金氧半導體電晶體100的實際操作電壓、飽和電流、漏電流、崩潰電壓等都不會因絕緣插塞元件110的數量與密度有太大影響與變化。
本發明之金氧半導體電晶體並不以上述實施例為限。下文將繼續揭示本發明之其它實施例或變化形，然為了簡化說明並突顯各實施例或變化形之間的差異，下文中使用相同標號標注相同元件，並不再對重覆部分作贅述。
請參考第3圖與第4圖，第3圖為本發明金氧半導體電晶體第一實施例之第一變化形的結構俯視示意圖，第4圖為第3圖所示金氧半導體電晶體沿著剖面線4-4’的局部剖面示意圖，其中第3圖仍省略了剖面結構中所示之部分元件，例如側壁子、STI元件、CESL層等，而第4圖的金屬閘極結構134中省略了功函數106，以下實施例與變化形亦同，不再贅述。本實施例與前一實施例的不同處主要在於絕緣插塞元件110係成棋盤格狀排列於閘極124中，各絕緣插塞元件110與其上、下或左、右兩側的相鄰絕緣插塞元件110之距離皆相同，例如皆為2微米，但不以此為限。第4圖所示之剖面結構中可看到一閘極124中由左至右依序設置了五個絕緣插塞元件110，且絕緣插塞元件110包含了側壁子112、CESL 114與ILD層116之一部分。
請參考第5圖，第5圖為本發明金氧半導體電晶體第一實施例之第二變化形的結構俯視示意圖。本實施例與第一實施例的差異處主要在於絕緣插塞元件110的排列方式，本實施例的絕緣插塞元件110係以菱形格狀的方式排列，也可以說絕緣插塞元件110排列成複數條直行M(第5圖中以虛線表示直行M)，且這些直行M不平行於閘極124圖案的長邊與短邊。
請參考第6圖，第6圖為本發明金氧半導體電晶體第二實施例之局部剖面示意圖。本實施例之金氧半導體電晶體1001係為標準電壓金氧半導體電晶體(normal voltage metal oxide semiconductor field effect transistor，NV MOSFET)，其長度L2小於第一實施例中閘極124的長度L1，但本實施例的閘極124之長度L2與寬度(未標示於圖中)之至少其中一者仍大於320奈米或是閘極124的操作電壓大於5伏特。金氧半導體電晶體1001包括閘極絕緣層104’設於基底102表面、閘極124設在STI元件120之間、摻雜區118設在閘極124兩側的基底102表面以當作源極與汲極、側壁子112設於閘極124的側壁表面與插塞孔洞134a的側壁表面、以及CESL 114覆蓋於側壁子112上。金氧半導體電晶體1001可另包括環狀包圍閘極124之ILD層116以及位於閘極124兩側的基底102的輕摻雜區126，且輕摻雜區126在基底102內包圍摻雜區118。
請參考第7圖，第7圖為本發明金氧半導體電晶體第三實施例之局部剖面示意圖。本實施例之金氧半導體電晶體1002係為橫向擴散金氧半導體(laterally diffused metal oxide semiconductor，LDMOS)電晶體，例如為一N型LDMOS電晶體。在本實施例中，金氧半導體電晶體 1002的閘極124之長度與寬度(未標示於圖中)之至少其中一者大於320奈米或是閘極124的操作電壓大於5伏特，且閘極124中設有複數個絕緣插塞元件110，絕緣插塞元件110由側壁子112與CESL 114所構成，但不以此為限。此外，金氧半導體電晶體1002可選擇性地包含一STI元件120設於閘極124之一側的基底102內，在第7圖中，STI元件120設於閘極結構124之右側，且與閘極124部分重疊，然而在其他變化形中，STI元件120可不與閘極124相重疊，或是金氧半導體電晶體1002不具有鄰近閘極124之STI元件120。金氧半導體電晶體1002另包含：二個N+型摻雜區1181、1182分別設於閘極124之兩側，其中作為源極之N+型摻雜區1181設於STI元件120相反於閘極124之一側；一N型漂移區122包圍STI元件120與N+型摻雜區1181；一選擇性的P型摻雜區127位於基底102中並包圍作為汲極之N+摻雜區1182；以及一P型井128包圍P型摻雜區127。
請參考第8圖，第8圖為本發明金氧半導體電晶體第四實施例之局部剖面示意圖。本實施例之金氧半導體電晶體1003係為一鰭式場效應電晶體(fin field effect transistor，finFET)，其基底102包含鰭狀結構130，而閘極124則設於鰭狀結構130上，且鰭狀結構130可選擇性地另包括磊晶層132，作為源極與汲極的摻雜區118分別位於閘極124兩側的磊晶層132表面。本實施例金氧半導體電晶體1003的閘極124之長度與寬度(未標示於圖中)之至少其中一者大於320奈米或是其操作電壓大於5伏特，且閘極124中仍設有複數個絕緣插塞元件110，第8圖係繪示出一個絕緣插塞元件110以作為示意。
習知常見的金屬閘極之製作方法係先製作多晶矽虛置閘極，在製作完電晶體的其他元件後，移除虛置閘極以形成閘極溝渠，再沉積金屬材料填於閘極溝渠中，進行化學機械研磨(chemical mechanical polishing，CMP)製程移除多餘的金屬材料以完成金屬閘極之製作。然而，為了提供較高之操作電壓，一般高壓金氧半導體的閘極結構具有較長的通道長度，亦即閘極結構尺寸較大，此情況會使得在CMP製程中造成閘極表面產生碟形下陷，影響到電晶體的電性表現。反觀本發明，由前述實施例可知，本發明之主要精神係在具有較大尺寸或較高操作電壓的電晶體閘極中設置一至數個絕緣插塞元件，例如當閘極尺寸大於製程能力極限時，在閘極中設置絕緣插塞元件，藉由絕緣插塞元件在後續的CMP製程中作為停止層，避免閘極因過度研磨而發生碟形下陷。本發明並未特別限定閘極中絕緣插塞元件之數量、尺寸、密度及排列方式，以不影響電晶體之電性表現為原則。此外，本發明金氧半導體電晶體可為具有各種結構之金氧半導體電晶體，包括可以是HVMOS電晶體、LDMOS電晶體、NVMOS電晶體或finFET，但不限於此。根據本發明，絕緣插塞元件的設置可以確實改善先前技術中閘極表面凹陷之問題，進而大幅改善電晶體的良率。
以上所述僅為本發明之較佳實施例，凡依本發明申請專利範圍所做之均等變化與修飾，皆應屬本發明之涵蓋範圍。

Claims (18)

  1. 一種金氧半導體電晶體，其包含有：一基底；一閘極絕緣層設於該基底表面；一金屬閘極設於該閘極絕緣層上，該金屬閘極內具有至少一插塞孔洞，且該金屬閘極之操作電壓大於5伏特(v)；至少一絕緣插塞元件，設於該插塞孔洞中；二摻雜區設於該基底內並分別位於該金屬閘極之兩側；以及至少一淺溝絕緣元件設於該金屬閘極與該基底之間，其中部分之該金屬閘極設於該淺溝絕緣元件上，並且部分之該閘極絕緣層低於該淺溝絕緣元件之一上表面。
  2. 如申請專利範圍第1項所述之金氧半導體電晶體，其中該絕緣插塞元件之頂面與該金屬閘極之頂面共平面。
  3. 如申請專利範圍第1項所述之金氧半導體電晶體，其另包含至少一側壁子，覆蓋該金屬閘極之側壁表面，該絕緣插塞元件包括該側壁子及/或一層間介電層之一部分。
  4. 如申請專利範圍第1項所述之金氧半導體電晶體，其中該絕緣插塞元件的尺寸為約80奈米至約120奈米。
  5. 如申請專利範圍第1項所述之金氧半導體電晶體，其中該金屬閘極包含複數個插塞孔洞，該金氧半導體電晶體包含複數個絕緣插 塞元件分別設於該等插塞孔洞之其中一者內。
  6. 如申請專利範圍第5項所述之金氧半導體電晶體，其中該等絕緣插塞元件係呈魚骨狀或棋盤格狀排列於該金屬閘極中。
  7. 如申請專利範圍第1項所述之金氧半導體電晶體，其中該金屬閘極包含功函數材料。
  8. 一種金氧半導體電晶體，其包含有：一基底；一閘極絕緣層設於該基底表面；一金屬閘極設於該閘極絕緣層上，該金屬閘極之長與寬的至少其中一者大於等於約320奈米，且該金屬閘極內具有至少一插塞孔洞；至少一絕緣插塞元件，設於該插塞孔洞中；二摻雜區設於該基底內並分別位於該金屬閘極之兩側；以及至少一淺溝絕緣元件設於該金屬閘極與該基底之間，其中部分之該金屬閘極設於該淺溝絕緣元件上，並且部分之該閘極絕緣層低於該淺溝絕緣元件之一上表面。
  9. 如申請專利範圍第8項所述之金氧半導體電晶體，其另包括一側壁子，覆蓋該金屬閘極之側壁表面，且該絕緣插塞元件包括該側壁子及/或一層間介電層之一部分。
  10. 如申請專利範圍第8項所述之金氧半導體電晶體，其中該絕 緣插塞元件的尺寸為約80奈米至約120奈米。
  11. 如申請專利範圍第8項所述之金氧半導體電晶體，其中該金屬閘極包含複數個插塞孔洞，該金氧半導體電晶體包含複數個絕緣插塞元件分別設於該等插塞孔洞之其中一者內。
  12. 如申請專利範圍第11項所述之金氧半導體電晶體，其中該等絕緣插塞元件係呈魚骨狀或棋盤格狀排列於該金屬閘極中。
  13. 如申請專利範圍第8項所述之金氧半導體電晶體，其中該金屬閘極包含功函數材料。
  14. 一種形成閘極佈局圖的方法，其包含：(a)提供一閘極佈局設計圖，其包含至少一閘極圖案；(b)當該閘極圖案的長與寬之其中任一者大於等於一預定尺寸時，於該閘極圖案中設置至少一絕緣插塞元件圖案，以形成一修正閘極佈局圖，其中該預定尺寸係由一製程能力極限所決定，該製程能力極限係指對閘極進行化學機械研磨時會使閘極發生碟形下陷(dishing)之最小閘極尺寸；以及(c)將該修正閘極佈局圖輸出製作於一光罩中。
  15. 如申請專利範圍第14項所述之形成閘極佈局圖的方法，其中該光罩係應用於一微影製程中，以使該修正閘極佈局圖轉移至一材料層上，而該絕緣插塞元件圖案的尺寸決定於該微影製程之最小曝光 極限尺寸。
  16. 如申請專利範圍第14項所述之形成閘極佈局圖的方法，其中該預定尺寸為約320奈米。
  17. 如申請專利範圍第14項所述之形成閘極佈局圖的方法，其中該絕緣插塞元件圖案的尺寸為約80奈米至約120奈米。
  18. 如申請專利範圍第14項所述之形成閘極佈局圖的方法，其中該步驟(b)係於該閘極圖案中設置複數個絕緣插塞元件圖案，且任兩相鄰之該等絕緣插塞元件圖案的距離小於等於該預定尺寸。
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