JP2014038878A - 半導体装置およびその製造方法 - Google Patents
半導体装置およびその製造方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 732
- 238000004519 manufacturing process Methods 0.000 title claims description 76
- 239000000758 substrate Substances 0.000 claims abstract description 123
- 229910052751 metal Inorganic materials 0.000 claims description 135
- 239000002184 metal Substances 0.000 claims description 135
- 238000002955 isolation Methods 0.000 claims description 98
- 238000000034 method Methods 0.000 claims description 65
- 238000005530 etching Methods 0.000 claims description 50
- 238000005468 ion implantation Methods 0.000 claims description 43
- 239000012535 impurity Substances 0.000 claims description 23
- 238000006243 chemical reaction Methods 0.000 claims description 6
- 150000001875 compounds Chemical class 0.000 claims description 6
- 230000000149 penetrating effect Effects 0.000 claims description 4
- 150000002500 ions Chemical class 0.000 claims description 3
- 125000006850 spacer group Chemical group 0.000 abstract description 230
- 238000009413 insulation Methods 0.000 abstract 3
- 239000010410 layer Substances 0.000 description 609
- 229910021332 silicide Inorganic materials 0.000 description 92
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 92
- 230000015572 biosynthetic process Effects 0.000 description 36
- 230000008569 process Effects 0.000 description 35
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 24
- 229910052814 silicon oxide Inorganic materials 0.000 description 24
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 22
- 229910052710 silicon Inorganic materials 0.000 description 22
- 239000010703 silicon Substances 0.000 description 22
- 229910052581 Si3N4 Inorganic materials 0.000 description 20
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 20
- 230000012447 hatching Effects 0.000 description 18
- 239000004020 conductor Substances 0.000 description 15
- 230000004888 barrier function Effects 0.000 description 11
- 239000000463 material Substances 0.000 description 8
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 8
- 238000001312 dry etching Methods 0.000 description 7
- 238000010438 heat treatment Methods 0.000 description 7
- 229920005591 polysilicon Polymers 0.000 description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 6
- 230000000903 blocking effect Effects 0.000 description 6
- 229910052802 copper Inorganic materials 0.000 description 6
- 239000010949 copper Substances 0.000 description 6
- 239000002356 single layer Substances 0.000 description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 5
- 230000002159 abnormal effect Effects 0.000 description 5
- 239000002019 doping agent Substances 0.000 description 5
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 239000010941 cobalt Substances 0.000 description 4
- 229910017052 cobalt Inorganic materials 0.000 description 4
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 4
- PCLURTMBFDTLSK-UHFFFAOYSA-N nickel platinum Chemical compound [Ni].[Pt] PCLURTMBFDTLSK-UHFFFAOYSA-N 0.000 description 4
- 238000000059 patterning Methods 0.000 description 4
- 238000007747 plating Methods 0.000 description 4
- 238000001039 wet etching Methods 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000002513 implantation Methods 0.000 description 3
- 239000012212 insulator Substances 0.000 description 3
- 239000011229 interlayer Substances 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 239000002344 surface layer Substances 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 2
- 229910001260 Pt alloy Inorganic materials 0.000 description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
- 230000001154 acute effect Effects 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 150000002736 metal compounds Chemical class 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910021334 nickel silicide Inorganic materials 0.000 description 2
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 229910021339 platinum silicide Inorganic materials 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- SCCCLDWUZODEKG-UHFFFAOYSA-N germanide Chemical compound [GeH3-] SCCCLDWUZODEKG-UHFFFAOYSA-N 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
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- H01L29/78621—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile
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- H01L29/665—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using self aligned silicidation, i.e. salicide
Abstract
【解決手段】基板SB1上の絶縁層BXと絶縁層BX上の半導体層SM1とを有するSOI基板SUBを用いて半導体装置が製造される。半導体装置は、半導体層SM1上にゲート絶縁膜を介して形成されたゲート電極と、ゲート電極の側壁上に形成されたサイドウォールスペーサと、半導体層SM1上にエピタキシャル成長された、ソース・ドレイン用の半導体層EPと、半導体層EPの側壁EP1上に形成されたサイドウォールスペーサSW3とを有している。
【選択図】図3
Description
<半導体装置の構造について>
図1〜図3は、本実施の形態の半導体装置の要部断面図であり、図4は、本実施の形態の半導体装置の要部平面図である。図1と図2とは、同じ領域の断面図が示されており、いずれも図4のA−A線の断面図に対応している。図3は、図1および図2とは異なる領域の断面図が示されており、図4のB−B線の断面図に対応している。
次に、本実施の形態の半導体装置の製造工程を、図面を参照して説明する。図5は、本実施の形態の半導体装置の製造工程を示す工程フロー図である。図6〜図37は、本実施の形態の半導体装置の製造工程中の要部断面図である。
本実施の形態の半導体装置は、支持基板である基板SB1と基板SB1上の絶縁層BXと絶縁層BX上の半導体層SM1とを有する基板(SOI基板SUB)を用いた半導体装置であり、半導体層SM1上にゲート絶縁膜GIを介して形成されたゲート電極GEを有している。そして、本実施の形態の半導体装置は、更に、ゲート電極GEの側壁上に形成されたサイドウォールスペーサ(側壁絶縁膜)SW2と、半導体層SM1上に形成された、ソース・ドレイン用の半導体層(エピタキシャル半導体層)EPと、半導体層EPの側壁(EP1)上に形成されたサイドウォールスペーサ(側壁絶縁膜)SW3とを有している。
SOI基板を用いて半導体装置を製造する場合、SOI基板の半導体層上に、ソース・ドレイン用の半導体層をエピタキシャル成長させる。これにより、例えば、ソース・ドレイン拡散層の深さを浅くしながら抵抗低減を図ることができ、また、サリサイドプロセスで金属シリサイド層を形成するのに適した半導体層の厚みを確保することができる。このような半導体装置について、検討した。
BX 絶縁層
CNT コンタクトホール
DT ディボット
EP 半導体層
EP1 側壁
EP2 側面
EX n−型半導体領域
GE ゲート電極
GI ゲート絶縁膜
IL1,IL2,IL3,IL4,IL5,IL6 絶縁膜
LM 積層膜
M1 配線
ME,ME101 金属膜
MS,MS101,MS201 金属シリサイド層
PG プラグ
RG1,RG2 領域
SB1 基板
SD n+型半導体領域
SM1 半導体層
SM1a 側面
SM2 半導体層
ST 素子分離領域
ST1 素子分離溝
SUB SOI基板
SW1,SW2,SW3 サイドウォールスペーサ
Claims (16)
- MISFETを備える半導体装置であって、
支持基板、前記支持基板上の絶縁層、および前記絶縁層上の第1半導体層を有する基板と、
前記第1半導体層上にゲート絶縁膜を介して形成された、前記MISFETのゲート電極と、
前記ゲート電極の側壁上に形成された第1側壁絶縁膜と、
前記第1半導体層上に形成された、前記MISFETのソース・ドレイン用のエピタキシャル半導体層と、
前記エピタキシャル半導体層の側壁上に形成された第2側壁絶縁膜と、
を有する、半導体装置。 - 請求項1記載の半導体装置において、
前記エピタキシャル半導体層の上部に、金属と前記エピタキシャル半導体層を構成する元素との化合物層が形成されている、半導体装置。 - 請求項2記載の半導体装置において、
前記基板に形成され、前記第1半導体層および前記絶縁層を貫通して底部が前記支持基板に達する素子分離領域を有し、
前記第2側壁絶縁膜は、前記エピタキシャル半導体層の側壁上に形成され、かつ前記素子分離領域上に位置している、半導体装置。 - 請求項3記載の半導体装置において、
前記第2側壁絶縁膜は、前記エピタキシャル半導体層の側壁上に形成され、かつ前記素子分離領域上に位置し、かつ前記第1半導体層の側面も覆っている、半導体装置。 - 請求項4記載の半導体装置において、
前記第1側壁絶縁膜の一部が、前記エピタキシャル半導体層上に位置している、半導体装置。 - (a)支持基板、前記支持基板上の絶縁層、および前記絶縁層上の第1半導体層を有する基板を準備する工程、
(b)前記第1半導体層上にゲート絶縁膜を介してゲート電極を形成する工程、
(c)前記ゲート電極の側壁上に、第1側壁絶縁膜を形成する工程、
(d)前記(c)工程後、前記ゲート電極および前記第1側壁絶縁膜で覆われずに露出する前記第1半導体層上に、エピタキシャル半導体層をエピタキシャル成長させる工程、
(e)前記(d)工程後、前記第1側壁絶縁膜の少なくとも一部を除去する工程、
(f)前記(e)工程後、前記ゲート電極の側壁上に第2側壁絶縁膜を、前記エピタキシャル半導体層の側壁上に第3側壁絶縁膜を、それぞれ形成する工程、
を有する、半導体装置の製造方法。 - 請求項6記載の半導体装置の製造方法において、
(g)前記(f)工程後、前記エピタキシャル半導体層上に、金属と前記エピタキシャル半導体層との反応層を形成する工程、
を有する、半導体装置の製造方法。 - 請求項7記載の半導体装置の製造方法において、
前記(a)工程後で、前記(b)工程前に、
(a1)前記基板に形成され、前記第1半導体層および前記絶縁層を貫通して底部が前記支持基板に達する素子分離領域を形成する工程、
を有し、
前記第3側壁絶縁膜は、前記エピタキシャル半導体層の側壁上に形成され、かつ前記素子分離領域上に位置している、半導体装置の製造方法。 - 請求項8記載の半導体装置の製造方法において、
前記エピタキシャル半導体層はソース・ドレイン用の半導体層である、半導体装置の製造方法。 - 請求項9記載の半導体装置の製造方法において、
前記第3側壁絶縁膜は、前記エピタキシャル半導体層の側壁上に形成され、かつ前記素子分離領域上に位置し、かつ前記第1半導体層の側面も覆っている、半導体装置の製造方法。 - 請求項10記載の半導体装置の製造方法において、
前記(f)工程で形成された前記第2側壁絶縁膜の一部が、前記エピタキシャル半導体層上に位置している、半導体装置の製造方法。 - 請求項9記載の半導体装置の製造方法において、
前記(e)工程後で、前記(f)工程前に、
前記(e1)前記ゲート電極をマスクとして前記第1半導体層および前記エピタキシャル半導体層にイオン注入を行うことにより、第1半導体領域を形成する工程、
を有する、半導体装置の製造方法。 - 請求項12記載の半導体装置の製造方法において、
前記(f)工程後で、前記(g)工程前に、
前記(f1)前記ゲート電極および前記第2側壁絶縁膜をマスクとして前記第1半導体層および前記エピタキシャル半導体層にイオン注入を行うことにより、前記第1半導体領域と同じ導電型でかつ前記第1半導体領域よりも高不純物濃度の第2半導体領域を形成する工程、
を有する、半導体装置の製造方法。 - 請求項9記載の半導体装置の製造方法において、
前記(c)工程は、
(c1)前記基板上に、前記ゲート電極を覆うように、第1絶縁膜および前記第1絶縁膜上の第2絶縁膜を有する積層膜を形成する工程、
(c2)前記(c1)工程後、前記積層膜をエッチバックして、前記ゲート電極の側壁上に前記積層膜からなる前記第1側壁絶縁膜を形成する工程、
を有し、
前記(e)工程では、前記第1側壁絶縁膜を構成する前記第2絶縁膜を除去する、半導体装置の製造方法。 - 請求項14記載の半導体装置の製造方法において、
前記(e)工程では、前記第2絶縁膜よりも前記第1絶縁膜がエッチングされにくい条件でエッチングを行い、前記第1側壁絶縁膜を構成する前記第2絶縁膜を除去し、前記第1側壁絶縁膜を構成する前記第1絶縁膜を層状に残存させる、半導体装置の製造方法。 - 請求項9記載の半導体装置の製造方法において、
前記(f)工程は、
(f2)前記基板上に、前記ゲート電極および前記エピタキシャル半導体層を覆うように、第3絶縁膜を形成する工程、
(f3)前記(f2)工程後、前記第3絶縁膜をエッチバックして、前記ゲート電極の側壁上に前記第3絶縁膜からなる前記第2側壁絶縁膜を、前記エピタキシャル半導体層の側壁上に前記第3絶縁膜からなる前記第3側壁絶縁膜を、それぞれ形成する工程、
を有する、半導体装置の製造方法。
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