JP2016018936A - 半導体装置およびその製造方法 - Google Patents
半導体装置およびその製造方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 152
- 238000004519 manufacturing process Methods 0.000 title claims description 35
- 239000012535 impurity Substances 0.000 claims abstract description 63
- 239000000758 substrate Substances 0.000 claims description 75
- 238000000034 method Methods 0.000 claims description 63
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 28
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 28
- 230000008569 process Effects 0.000 claims description 21
- 229910021332 silicide Inorganic materials 0.000 claims description 19
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 19
- 239000000463 material Substances 0.000 claims description 11
- 230000005669 field effect Effects 0.000 claims description 9
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 24
- 125000006850 spacer group Chemical group 0.000 description 21
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 20
- 239000011229 interlayer Substances 0.000 description 20
- 229910052710 silicon Inorganic materials 0.000 description 20
- 239000010703 silicon Substances 0.000 description 20
- 238000005468 ion implantation Methods 0.000 description 17
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 16
- 229920005591 polysilicon Polymers 0.000 description 16
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- 229910052796 boron Inorganic materials 0.000 description 8
- 229910052735 hafnium Inorganic materials 0.000 description 8
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 8
- 230000007423 decrease Effects 0.000 description 6
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 5
- 229910052785 arsenic Inorganic materials 0.000 description 5
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 5
- 238000001312 dry etching Methods 0.000 description 5
- 229910052698 phosphorus Inorganic materials 0.000 description 5
- 239000011574 phosphorus Substances 0.000 description 5
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
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- 238000005530 etching Methods 0.000 description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 3
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- 229910019001 CoSi Inorganic materials 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910004143 HfON Inorganic materials 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
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- 238000005498 polishing Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
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Abstract
【解決手段】NMOSQ1のゲート電極G1をP型の半導体膜により構成し、NMOSQ1のゲート絶縁膜GF内に高誘電率膜HKを設け、かつ、NMOSQ1のチャネル領域に不純物が導入されることを防ぐ。また、PMOSQ2のゲート絶縁膜GF内にも高誘電率膜HKを設ける。
【選択図】図1
Description
1B PMOS領域
BX BOX膜
CL 層間絶縁膜
CP コンタクトプラグ
D1、D2 拡散領域
EP エピタキシャル層
EX1、EX2 エクステンション領域
G1、G2、GN、GP ゲート電極
GF ゲート絶縁膜
HK 高誘電率膜
HM 絶縁膜
IF 絶縁膜
IL 層間絶縁膜
M1 配線
N1、N2 窒化シリコン膜
O1 酸化シリコン膜
OF オフセットスペーサ
PR1〜PR4 フォトレジスト膜
PS ポリシリコン膜
Q1 NMOS
Q2 PMOS
S1 シリサイド層
SB 半導体基板
SL SOI層
STI 素子分離領域
SW サイドウォール
Claims (8)
- 半導体基板と、
前記半導体基板上の第1絶縁膜と、
前記第1絶縁膜上の半導体層と、
前記半導体層上に第2絶縁膜を介して形成された、P型の第1半導体膜を含む第1ゲート電極と、
前記第1ゲート電極の横の前記半導体層内に、N型の不純物が導入されて形成された一対の第1ソース・ドレイン領域と、
を有し、
前記半導体基板、前記第1絶縁膜および前記半導体層は、SOI基板を構成し、
前記第1ゲート電極および一対の前記第1ソース・ドレイン領域は、Nチャネル型電界効果トランジスタを構成し、
前記第2絶縁膜は、酸化シリコンよりも高い誘電率を有する材料を含む、半導体装置。 - 請求項1記載の半導体装置において、
一対の前記第1ソース・ドレイン領域の相互間の前記半導体層は、真性半導体層である、半導体装置。 - 請求項1記載の半導体装置において
一対の前記第1ソース・ドレイン領域の相互間の前記半導体層内における、前記P型の不純物の濃度は、1×1017/cm3以下である、半導体装置。 - 請求項1記載の半導体装置において、
前記SOI基板の上面に沿う方向において並ぶ第1領域および第2領域のうち、前記第1領域には前記Nチャネル型電界効果トランジスタが形成され、前記第2領域にはPチャネル型電界効果トランジスタが形成されており、
前記Pチャネル型電界効果トランジスタは、
前記第2領域の前記半導体層上に第3絶縁膜を介して形成された、前記P型の第2半導体膜を含む第2ゲート電極と、
前記第2ゲート電極の横の前記半導体層内に、前記P型の不純物が導入されて形成された一対の第2ソース・ドレイン領域と、
を有し、
前記第3絶縁膜は、酸化シリコンよりも高い誘電率を有する材料を含む、半導体装置。 - (a1)半導体基板と、前記半導体基板上に形成された第1絶縁膜と、前記第1絶縁膜上に形成された半導体層とにより構成され、上面に第1領域を有するSOI基板を準備する工程、
(b1)前記第1領域の前記半導体層上に、酸化シリコンよりも高い誘電率を有する材料を含む第2絶縁膜と、P型の半導体膜を含む第1ゲート電極と、前記第1ゲート電極の上面を覆う第3絶縁膜とを順に積層した第1パターンを形成する工程、
(c1)前記第1ゲート電極の側壁を覆い、第4絶縁膜を含む第1サイドウォールを形成する工程、
(d1)前記第1ゲート電極の横において前記第1サイドウォールから露出する前記半導体層上に一対の第1エピタキシャル層を形成する工程、
(e1)前記第3絶縁膜をマスクとして用い、一対の前記第1エピタキシャル層にN型の不純物を打ち込むことで、一対の第1ソース・ドレイン領域を形成することにより、前記第1ゲート電極および一対の前記第1ソース・ドレイン領域を含むNチャネル型電界効果トランジスタを前記第1領域に形成する工程、
(f1)前記(e1)工程の後、前記第3絶縁膜および前記第1サイドウォールを除去することで、前記第1ゲート電極の上面を露出させる工程、
(g1)前記(f1)工程の後、前記第1ゲート電極の側壁を覆い、第5絶縁膜を含む第2サイドウォールを形成する工程、
(h1)前記(g1)工程の後、前記第1ゲート電極および一対の前記第1エピタキシャル層のそれぞれの上に複数のシリサイド層を形成する工程、
を有する、半導体装置の製造方法。 - 請求項5記載の半導体装置の製造方法において、
一対の前記第1ソース・ドレイン領域の相互間の前記半導体層は、真性半導体層である、半導体装置の製造方法。 - 請求項5記載の半導体装置の製造方法において、
前記SOI基板は、前記SOI基板の上面に沿って並ぶ前記第1領域および第2領域を有し、
前記(b1)工程では、前記第1領域に前記第2絶縁膜、前記第1ゲート電極および前記第3絶縁膜を形成し、
前記第2領域の前記半導体層上に、酸化シリコンよりも高い誘電率を有する材料を含む第6絶縁膜と、前記P型の半導体膜を含む第2ゲート電極と、前記第2ゲート電極の上面を覆う第7絶縁膜とを順に積層した第2パターンを形成し、
前記(c1)工程では、前記第1サイドウォールと、前記第2ゲート電極の側壁を覆い、第8絶縁膜を含む第3サイドウォールとを形成し、
前記(d1)工程では、一対の前記第1エピタキシャル層を形成し、前記第2ゲート電極の横において前記第3サイドウォールから露出する前記半導体層上に一対の第2エピタキシャル層を形成し、
(e2)前記第7絶縁膜をマスクとして用い、一対の前記第2エピタキシャル層に前記P型の不純物を打ち込むことで、一対の第2ソース・ドレイン領域を形成することにより、前記第1ゲート電極および一対の前記第2ソース・ドレイン領域を含むPチャネル型電界効果トランジスタを前記第2領域に形成する工程をさらに有し、
前記(f1)工程では、前記(e2)工程の後に、前記第3絶縁膜、前記第7絶縁膜、前記第1サイドウォールおよび前記第3サイドウォールを除去することで、前記第2ゲート電極の上面を露出させ、
前記(g1)工程では、前記第2サイドウォールと、前記第2ゲート電極の側壁を覆い、第9絶縁膜を含む第4サイドウォールとを形成し、
前記(h1)工程では、前記第1ゲート電極、前記第2ゲート電極、一対の前記第1エピタキシャル層および一対の前記第2エピタキシャル層のそれぞれの上に前記複数のシリサイド層を形成する、半導体装置の製造方法。 - 請求項5記載の半導体装置の製造方法において、
前記SOI基板は、前記SOI基板の上面に沿って並ぶ前記第1領域および第2領域を有し、
前記(b1)工程では、前記第1領域に前記第2絶縁膜、前記第1ゲート電極および前記第3絶縁膜を形成し、
前記第2領域の前記半導体層上に、酸化シリコンよりも高い誘電率を有する材料を含む第6絶縁膜と、前記P型の半導体膜を含む第2ゲート電極と、前記第2ゲート電極の上面を覆う第7絶縁膜とを順に積層した第2パターンを形成し、
前記(c1)工程では、前記第1サイドウォールと、前記第2ゲート電極の側壁を覆い、第8絶縁膜を含む第3サイドウォールとを形成し、
前記(d1)工程では、一対の前記第1エピタキシャル層を形成し、前記第2ゲート電極の横において前記第3サイドウォールから露出する前記半導体層上に一対の第2エピタキシャル層を形成し、
前記(f1)工程では、前記第3絶縁膜、前記第7絶縁膜、前記第1サイドウォールおよび前記第3サイドウォールを除去し、前記第2ゲート電極の上面を露出させ、
(f2)前記(f1)工程の後、一対の前記第2エピタキシャル層に前記P型の不純物を打ち込むことで、一対の第2ソース・ドレイン領域を形成することにより、前記第1ゲート電極および一対の前記第2ソース・ドレイン領域を含むPチャネル型電界効果トランジスタを前記第2領域に形成する工程をさらに有し、
前記(g1)工程では、前記(f2)工程の後に、前記第2サイドウォールと、前記第2ゲート電極の側壁を覆い、第9絶縁膜を含む第4サイドウォールとを形成し、
前記(h1)工程では、前記第1ゲート電極、前記第2ゲート電極、一対の前記第1エピタキシャル層および一対の前記第2エピタキシャル層のそれぞれの上に前記複数のシリサイド層を形成する、半導体装置の製造方法。
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US10886379B2 (en) | 2017-09-28 | 2021-01-05 | Renesas Electronics Corporation | Semiconductor device and method of manufacturing same |
KR20210043465A (ko) | 2019-10-10 | 2021-04-21 | 르네사스 일렉트로닉스 가부시키가이샤 | 반도체 장치 및 그 제조 방법 |
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US9748281B1 (en) * | 2016-09-15 | 2017-08-29 | International Business Machines Corporation | Integrated gate driver |
US10825931B2 (en) * | 2018-02-13 | 2020-11-03 | Nanya Technology Corporation | Semiconductor device with undercutted-gate and method of fabricating the same |
US11037832B2 (en) | 2019-05-29 | 2021-06-15 | International Business Machines Corporation | Threshold voltage adjustment by inner spacer material selection |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5649561A (en) * | 1979-09-28 | 1981-05-06 | Toshiba Corp | Complementary mos ic device and its process of preparation |
JPH04177873A (ja) * | 1990-11-13 | 1992-06-25 | Fujitsu Ltd | 相補型mis半導体装置 |
JP2004146550A (ja) * | 2002-10-24 | 2004-05-20 | Oki Electric Ind Co Ltd | 半導体装置及びその製造方法 |
JP2013191760A (ja) * | 2012-03-14 | 2013-09-26 | Renesas Electronics Corp | 半導体装置 |
JP2014038878A (ja) * | 2012-08-10 | 2014-02-27 | Renesas Electronics Corp | 半導体装置およびその製造方法 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4860183B2 (ja) * | 2005-05-24 | 2012-01-25 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
US8466473B2 (en) * | 2010-12-06 | 2013-06-18 | International Business Machines Corporation | Structure and method for Vt tuning and short channel control with high k/metal gate MOSFETs |
US8729637B2 (en) * | 2011-10-05 | 2014-05-20 | International Business Machines Corporation | Work function adjustment by carbon implant in semiconductor devices including gate structure |
-
2014
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Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5649561A (en) * | 1979-09-28 | 1981-05-06 | Toshiba Corp | Complementary mos ic device and its process of preparation |
JPH04177873A (ja) * | 1990-11-13 | 1992-06-25 | Fujitsu Ltd | 相補型mis半導体装置 |
JP2004146550A (ja) * | 2002-10-24 | 2004-05-20 | Oki Electric Ind Co Ltd | 半導体装置及びその製造方法 |
JP2013191760A (ja) * | 2012-03-14 | 2013-09-26 | Renesas Electronics Corp | 半導体装置 |
JP2014038878A (ja) * | 2012-08-10 | 2014-02-27 | Renesas Electronics Corp | 半導体装置およびその製造方法 |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10886379B2 (en) | 2017-09-28 | 2021-01-05 | Renesas Electronics Corporation | Semiconductor device and method of manufacturing same |
US11239337B2 (en) | 2017-09-28 | 2022-02-01 | Renesas Electronics Corporation | Semiconductor device and method of manufacturing same |
JP2019207971A (ja) * | 2018-05-30 | 2019-12-05 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
JP7034834B2 (ja) | 2018-05-30 | 2022-03-14 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
KR20210043465A (ko) | 2019-10-10 | 2021-04-21 | 르네사스 일렉트로닉스 가부시키가이샤 | 반도체 장치 및 그 제조 방법 |
US11217605B2 (en) | 2019-10-10 | 2022-01-04 | Renesas Electronics Corporation | Semiconductor device and method of manufacturing the same |
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