JP5968708B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP5968708B2 JP5968708B2 JP2012163907A JP2012163907A JP5968708B2 JP 5968708 B2 JP5968708 B2 JP 5968708B2 JP 2012163907 A JP2012163907 A JP 2012163907A JP 2012163907 A JP2012163907 A JP 2012163907A JP 5968708 B2 JP5968708 B2 JP 5968708B2
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Description
本実施の形態によるMOS型電界効果トランジスタ(以下単にMOSFETと呼ぶ)の製造工程を図面を参照して説明する。図1〜図7は、本実施の形態である半導体装置、例えばSOI基板上にnチャネル型MOSFETを有する半導体装置の製造工程中の断面図である。
前記実施の形態1では、ゲート電極を形成した後にソース・ドレイン領域を形成するゲートファーストプロセスによりMOSFETを形成する方法について説明したが、本実施の形態では、ソース・ドレイン領域を形成した後にゲート電極を形成するゲートラストプロセスにより形成されたMOSFETについて説明する。
本実施の形態では、前記実施の形態2と同様に、ゲートラストプロセスによりMOSFETを形成する場合について説明する。以下では、図13〜図17を用いて、オフセットスペーサを除去した領域に対してイオン注入を行い、ゲート電極の両端の直下のみにハロー領域を形成する、本実施の形態の半導体装置の製造工程について説明する。図13〜図17は、本実施の形態の半導体装置の製造工程を説明する断面図である。
(1)(a)第1方向において互いに隣接する第1領域および第2領域を上面に有する支持基板と、前記支持基板上に形成された第1絶縁膜と、前記第1絶縁膜上に形成された半導体層とにより構成される半導体基板を準備する工程と、
(b)前記半導体層上に第1膜を形成する工程と、
(c)前記第1膜を加工して、前記第1領域の直上に前記第1膜からなる犠牲パターンを形成する工程と、
(d)前記犠牲パターンから露出する前記半導体層上にエピタキシャル層を形成する工程と、
(e)前記エピタキシャル層に第1導電型の不純物を導入することで、前記第1方向において前記犠牲パターンを挟む一対のソース・ドレイン領域を形成する工程と、
(f)前記ソース・ドレイン領域および前記半導体層を覆うように、前記半導体層上に第2絶縁膜を形成する工程と、
(g)前記第2絶縁膜の上面を一部除去し、露出させた前記犠牲パターンを除去することで、前記半導体層の上面を露出する開口部を前記第2絶縁膜に形成する工程と、
(h)前記(g)工程の後、前記支持基板の上方から前記開口部の直下の前記第1領域に前記第1導電型または第2導電型の不純物を導入することにより、第1拡散層を形成する工程と、
(i)前記(h)工程の後、前記開口部の底部の前記半導体層上に、ゲート絶縁膜を介してゲート電極を形成する工程と、
を有する、半導体装置の製造方法。
(2)前記ソース・ドレイン領域は前記第2領域の直上に形成されており、
前記支持基板の上面に導入された前記第1導電型または前記第2導電型の不純物の濃度は、前記第2領域よりも前記第1領域の方が高い、(1)記載の半導体装置の製造方法。
(3)(a)第1方向において互いに隣接する第1領域および第2領域を上面に有する支持基板と、前記支持基板上に形成された第1絶縁膜と、前記第1絶縁膜上に形成された半導体層とにより構成される半導体基板を準備する工程と、
(b)前記第1領域の直上であって、前記半導体層上に第1膜を形成する工程と、
(c)前記第1膜を加工して、前記第1領域の直上に前記第1膜からなる犠牲パターンを形成する工程と、
(d)前記犠牲パターンの側壁を覆い、前記半導体層の上面に接する第3絶縁膜を形成する工程と、
(e)前記犠牲パターンおよび前記第3絶縁膜から露出する前記半導体層上にエピタキシャル層を形成する工程と、
(f)前記エピタキシャル層に第1導電型の不純物を導入することで、前記第1方向において前記犠牲パターンを挟む一対のソース・ドレイン領域を形成する工程と、
(g)前記ソース・ドレイン領域および前記半導体層を覆うように、前記半導体層上に第2絶縁膜を形成する工程と、
(h)前記第2絶縁膜の上面を一部除去し、露出させた前記第3絶縁膜を除去することで、前記半導体層の上面を露出する第1開口部を前記第2絶縁膜と前記犠牲パターンとの間に形成する工程と、
(i)前記(h)工程の後、前記支持基板の上方から前記第1開口部の直下の前記第2領域に前記第1導電型または第2導電型の不純物を導入することにより、第1拡散層を形成する工程と、
(j)前記(i)工程の後、前記犠牲パターンを除去することで、前記半導体層の上面を露出する第2開口部を前記第2絶縁膜に形成する工程と、
(k)前記第2開口部の底部の前記半導体層上に、ゲート絶縁膜を介してゲート電極を形成する工程と、
を有する、半導体装置の製造方法。
(4)前記支持基板の上面に導入された前記第1導電型または前記第2導電型の不純物の濃度は、前記第1領域よりも前記第2領域の方が高い、(3)記載の半導体装置の製造方法。
(5)前記ソース・ドレイン領域は、前記第1方向において前記第1領域および前記第2領域を挟むように前記支持基板の上面に形成された、第3領域の直上に形成されており、
前記支持基板の上面に導入された前記第1導電型または前記第2導電型の不純物の濃度は、前記第3領域よりも前記第2領域の方が高い、(3)記載の半導体装置の製造方法。
(6)前記(h)工程の後であって、前記(j)工程の前に、前記支持基板の上方から前記第1開口部の直下の前記半導体層に前記第1導電型の不純物を、前記エピタキシャル層よりも低い濃度で導入することにより、エクステンション領域を形成する工程を有する、(3)記載の半導体装置の製造方法。
2 BOX膜
3 シリコン層
4 ゲート絶縁膜
5 ゲート電極
6 窒化シリコン膜
7 酸化シリコン膜
8、8a、8b 窒化シリコン膜
9、9a〜9c エピタキシャル層
10、10a エクステンション領域
11、11a ハロー領域
12、12a 拡散層
13 シリサイド層
14 エッチングストッパ膜
15 層間絶縁膜
16 ハロー領域
17 ゲート絶縁膜
18 ゲート電極
19 ハロー領域
D5 ダミーゲート電極(犠牲パターン)
OP1 開口部
OP2 開口部
OSS オフセットスペーサ
Qa〜Qd MOSFET
SW サイドウォール
Claims (3)
- 第1方向において互いに隣接する第1領域および第2領域、並びに、前記第1方向において前記第1領域および前記第2領域を挟む第3領域を上面に有する支持基板と、
前記支持基板上に形成された第1絶縁膜と、
前記第1絶縁膜上に形成された半導体層と、
前記第1領域の直上であって、前記半導体層上にゲート絶縁膜を介して形成されたゲート電極と、
前記第1方向において前記ゲート電極を挟むように形成された第1導電型を有する一対のソース・ドレイン領域と、
前記第2領域に形成された第2導電型を有する拡散層と、
を有し、
前記ソース・ドレイン領域は、前記第2領域の直上の前記半導体層の上面に形成された第1導電型の不純物を含むエクステンション領域と、
前記第3領域の直上の前記半導体層上に形成され、前記第1導電型の不純物が前記エクステンション領域よりも高い濃度で導入されたエピタキシャル層と、
を有し、
前記支持基板の上面に導入された前記第2導電型の不純物の濃度は、前記第1領域および前記第3領域のいずれよりも前記第2領域の方が高い、半導体装置。 - 前記半導体層上には、前記ソース・ドレイン領域を覆う第2絶縁膜が形成されており、
前記ゲート電極は、前記第2絶縁膜の開口内に前記ゲート絶縁膜を介して形成されている、請求項1記載の半導体装置。 - 前記ゲート電極は金属膜からなり、
前記ゲート絶縁膜はハフニウムを含有する、請求項2記載の半導体装置。
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US13/747,537 US8941178B2 (en) | 2012-01-23 | 2013-01-23 | MOS field-effect transistor formed on the SOI substrate |
US14/579,242 US9196705B2 (en) | 2012-01-23 | 2014-12-22 | Method of manufacturing a misfet on an SOI substrate |
US14/929,646 US9484433B2 (en) | 2012-01-23 | 2015-11-02 | Method of manufacturing a MISFET on an SOI substrate |
US15/279,565 US9773872B2 (en) | 2012-01-23 | 2016-09-29 | Method of manufacturing a semiconductor device to prevent occurrence of short-channel characteristics and parasitic capacitance |
US15/628,925 US9978839B2 (en) | 2012-01-23 | 2017-06-21 | Method of manufacturing a MOSFET on an SOI substrate |
US15/925,850 US10263078B2 (en) | 2012-01-23 | 2018-03-20 | Method of manufacturing a MISFET on an SOI substrate |
US16/150,323 US10461158B2 (en) | 2012-01-23 | 2018-10-03 | Semiconductor device and manufacturing method of the same |
US16/575,836 US20200013857A1 (en) | 2012-01-23 | 2019-09-19 | Semiconductor device and manufacturing method of the same |
US17/224,743 US11658211B2 (en) | 2012-01-23 | 2021-04-07 | Semiconductor device and manufacturing method of the same |
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Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5968708B2 (ja) * | 2012-01-23 | 2016-08-10 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
FR3012258A1 (fr) * | 2013-10-23 | 2015-04-24 | St Microelectronics Crolles 2 | Procede de realisation de transistors nmos et pmos sur un substrat du type soi, en particulier fdsoi, et circuit integre correspondant |
JP6402017B2 (ja) * | 2013-12-26 | 2018-10-10 | 株式会社半導体エネルギー研究所 | 半導体装置 |
US9876110B2 (en) | 2014-01-31 | 2018-01-23 | Stmicroelectronics, Inc. | High dose implantation for ultrathin semiconductor-on-insulator substrates |
RU2643938C1 (ru) * | 2016-12-23 | 2018-02-06 | Акционерное общество "Научно-исследовательский институт молекулярной электроники" | Способ изготовления высокотемпературных КМОП КНИ интегральных схем |
US10475895B2 (en) * | 2017-05-25 | 2019-11-12 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device and method for manufacturing the same |
CN108470686B (zh) | 2017-06-30 | 2019-10-18 | 长鑫存储技术有限公司 | 一种半导体器件结构及其制备方法 |
FR3073669B1 (fr) * | 2017-11-10 | 2021-11-05 | Commissariat Energie Atomique | Procede de fabrication d'un dispositif optoelectronique comprenant une pluralite de diodes |
US11183514B2 (en) | 2019-09-05 | 2021-11-23 | Globalfoundries U.S. Inc. | Vertically stacked field effect transistors |
Family Cites Families (69)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0832040A (ja) * | 1994-07-14 | 1996-02-02 | Nec Corp | 半導体装置 |
JPH08153880A (ja) * | 1994-09-29 | 1996-06-11 | Toshiba Corp | 半導体装置及びその製造方法 |
JPH10189966A (ja) * | 1996-12-26 | 1998-07-21 | Toshiba Corp | 半導体装置及びその製造方法 |
JP3544833B2 (ja) * | 1997-09-18 | 2004-07-21 | 株式会社東芝 | 半導体装置及びその製造方法 |
JP2001015591A (ja) | 1999-06-30 | 2001-01-19 | Toshiba Corp | 半導体装置の製造方法・半導体装置 |
TW469648B (en) * | 1999-09-07 | 2001-12-21 | Sharp Kk | Semiconductor device and its manufacture method |
US6300201B1 (en) * | 2000-03-13 | 2001-10-09 | Chartered Semiconductor Manufacturing Ltd. | Method to form a high K dielectric gate insulator layer, a metal gate structure, and self-aligned channel regions, post source/drain formation |
JP3906005B2 (ja) * | 2000-03-27 | 2007-04-18 | 株式会社東芝 | 半導体装置の製造方法 |
JP2001326349A (ja) | 2000-05-16 | 2001-11-22 | Toshiba Corp | 半導体装置の製造方法 |
US6437404B1 (en) * | 2000-08-10 | 2002-08-20 | Advanced Micro Devices, Inc. | Semiconductor-on-insulator transistor with recessed source and drain |
US6479866B1 (en) * | 2000-11-14 | 2002-11-12 | Advanced Micro Devices, Inc. | SOI device with self-aligned selective damage implant, and method |
US6552389B2 (en) * | 2000-12-14 | 2003-04-22 | Kabushiki Kaisha Toshiba | Offset-gate-type semiconductor device |
US7187031B2 (en) | 2002-05-31 | 2007-03-06 | Sharp Kabushiki Kaisha | Semiconductor device having a low dielectric constant film and manufacturing method thereof |
JP3828511B2 (ja) * | 2003-06-26 | 2006-10-04 | 株式会社東芝 | 半導体装置の製造方法 |
US7125805B2 (en) | 2004-05-05 | 2006-10-24 | Freescale Semiconductor, Inc. | Method of semiconductor fabrication incorporating disposable spacer into elevated source/drain processing |
JP5172083B2 (ja) * | 2004-10-18 | 2013-03-27 | ルネサスエレクトロニクス株式会社 | 半導体装置及びその製造方法、並びにメモリ回路 |
JP2006196910A (ja) | 2005-01-14 | 2006-07-27 | Samsung Electronics Co Ltd | 半導体基板のインサイチュ洗浄方法及びこれを採用する半導体素子の製造方法 |
JP4851718B2 (ja) | 2005-01-28 | 2012-01-11 | 株式会社東芝 | 半導体装置 |
US7384853B2 (en) * | 2005-08-25 | 2008-06-10 | United Microelectronics Corp. | Method of performing salicide processes on MOS transistors |
US8053849B2 (en) * | 2005-11-09 | 2011-11-08 | Advanced Micro Devices, Inc. | Replacement metal gate transistors with reduced gate oxide leakage |
KR100724560B1 (ko) * | 2005-11-18 | 2007-06-04 | 삼성전자주식회사 | 결정질 반도체층을 갖는 반도체소자, 그의 제조방법 및그의 구동방법 |
US20070128820A1 (en) | 2005-12-05 | 2007-06-07 | Intel Corporation | Apparatus and method of fabricating a MOSFET transistor having a self-aligned implant |
JP2007188992A (ja) | 2006-01-12 | 2007-07-26 | Oki Electric Ind Co Ltd | 半導体装置およびその製造方法 |
US20070184600A1 (en) * | 2006-02-06 | 2007-08-09 | Freescale Semiconductor | Stressed-channel CMOS transistors |
US20080079051A1 (en) * | 2006-09-29 | 2008-04-03 | Luo Yuan | Varactor with halo implant regions of opposite polarity |
JP5380827B2 (ja) * | 2006-12-11 | 2014-01-08 | ソニー株式会社 | 半導体装置の製造方法 |
JP2009158677A (ja) | 2007-12-26 | 2009-07-16 | Renesas Technology Corp | 半導体装置の製造方法及び混成トランジスタ用半導体装置の製造方法 |
JP2009212413A (ja) * | 2008-03-06 | 2009-09-17 | Renesas Technology Corp | 半導体装置及び半導体装置の製造方法 |
JP5275056B2 (ja) | 2009-01-21 | 2013-08-28 | 株式会社東芝 | 半導体装置の製造方法及び半導体装置 |
US8273629B2 (en) * | 2009-03-19 | 2012-09-25 | International Business Machines Corporation | Through-gate implant for body dopant |
JP2010251344A (ja) | 2009-04-10 | 2010-11-04 | Hitachi Ltd | 半導体装置およびその製造方法 |
JP5668277B2 (ja) * | 2009-06-12 | 2015-02-12 | ソニー株式会社 | 半導体装置 |
JP2011086728A (ja) * | 2009-10-14 | 2011-04-28 | Renesas Electronics Corp | 半導体装置およびその製造方法 |
CN101840862B (zh) * | 2009-10-15 | 2013-02-20 | 中国科学院微电子研究所 | 高性能半导体器件的形成方法 |
US20110095379A1 (en) * | 2009-10-28 | 2011-04-28 | International Business Machines Corporation | Scaling of metal gate with aluminum containing metal layer for threshold voltage shift |
US9017387B2 (en) * | 2009-12-19 | 2015-04-28 | James H. Aldridge | Apparatus and system for vertebrae stabilization and curvature correction, and methods of making and using same |
JP2011222769A (ja) | 2010-04-09 | 2011-11-04 | Renesas Electronics Corp | 半導体装置 |
US8617956B2 (en) * | 2010-08-19 | 2013-12-31 | International Business Machines Corporation | Method and structure for forming high-K/metal gate extremely thin semiconductor on insulator device |
US8298884B2 (en) * | 2010-08-24 | 2012-10-30 | International Business Machines Corporation | Method to reduce threshold voltage variability with through gate well implant |
JP5559639B2 (ja) * | 2010-08-25 | 2014-07-23 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
JP5670669B2 (ja) * | 2010-08-30 | 2015-02-18 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
KR101716113B1 (ko) * | 2010-11-03 | 2017-03-15 | 삼성전자 주식회사 | 반도체 소자 및 이의 제조 방법 |
JP5661445B2 (ja) * | 2010-12-14 | 2015-01-28 | ルネサスエレクトロニクス株式会社 | 半導体集積回路装置およびその製造方法 |
DE102010063292B4 (de) * | 2010-12-16 | 2016-08-04 | Globalfoundries Dresden Module One Limited Liability Company & Co. Kg | Verfahren zur Herstellung gering diffundierter Drain- und Sourcegebiete in CMOS-Transistoren für Anwendungen mit hoher Leistungsfähigkeit und geringer Leistung |
US20120267724A1 (en) * | 2011-04-20 | 2012-10-25 | Globalfoundries Inc. | Mos semiconductor device and methods for its fabrication |
JP5325932B2 (ja) * | 2011-05-27 | 2013-10-23 | 株式会社東芝 | 半導体装置およびその製造方法 |
US8664103B2 (en) * | 2011-06-07 | 2014-03-04 | Globalfoundries Inc. | Metal gate stack formation for replacement gate technology |
US8536032B2 (en) * | 2011-06-08 | 2013-09-17 | International Business Machines Corporation | Formation of embedded stressor through ion implantation |
US8884341B2 (en) * | 2011-08-16 | 2014-11-11 | Taiwan Semiconductor Manufacturing Company, Ltd. | Integrated circuits |
US20130059434A1 (en) * | 2011-09-07 | 2013-03-07 | Tao Yang | Method for manufacturing electrodes and wires in gate last process |
US20130069123A1 (en) * | 2011-09-16 | 2013-03-21 | Globalfoundries Inc. | Cmos semiconductor devices having stressor regions and related fabrication methods |
US8435846B2 (en) * | 2011-10-03 | 2013-05-07 | International Business Machines Corporation | Semiconductor devices with raised extensions |
US8709890B2 (en) * | 2011-12-12 | 2014-04-29 | International Business Machines Corporation | Method and structure for forming ETSOI capacitors, diodes, resistors and back gate contacts |
US8748258B2 (en) * | 2011-12-12 | 2014-06-10 | International Business Machines Corporation | Method and structure for forming on-chip high quality capacitors with ETSOI transistors |
US8659066B2 (en) * | 2012-01-06 | 2014-02-25 | International Business Machines Corporation | Integrated circuit with a thin body field effect transistor and capacitor |
US20130175619A1 (en) * | 2012-01-06 | 2013-07-11 | International Business Machines Corporation | Silicon-on-insulator transistor with self-aligned borderless source/drain contacts |
US9012277B2 (en) * | 2012-01-09 | 2015-04-21 | Globalfoundries Inc. | In situ doping and diffusionless annealing of embedded stressor regions in PMOS and NMOS devices |
US20130175610A1 (en) * | 2012-01-10 | 2013-07-11 | Globalfoundries Inc. | Transistor with stress enhanced channel and methods for fabrication |
US8963247B2 (en) * | 2012-01-13 | 2015-02-24 | Newport Fab, Llc | Selective amorphization for electrical signal isolation and linearity in SOI structures |
JP5968708B2 (ja) * | 2012-01-23 | 2016-08-10 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
US9171925B2 (en) * | 2012-01-24 | 2015-10-27 | Taiwan Semiconductor Manufacturing Company, Ltd. | Multi-gate devices with replaced-channels and methods for forming the same |
US8664060B2 (en) * | 2012-02-07 | 2014-03-04 | United Microelectronics Corp. | Semiconductor structure and method of fabricating the same |
US8994097B2 (en) * | 2012-03-08 | 2015-03-31 | Taiwan Semiconductor Manufacturing Company, Ltd. | MOS devices having non-uniform stressor doping |
CN103378008B (zh) * | 2012-04-27 | 2015-10-14 | 中国科学院微电子研究所 | 双金属栅极cmos器件及其制造方法 |
US8754527B2 (en) * | 2012-07-31 | 2014-06-17 | International Business Machines Corporation | Self aligned borderless contact |
US9059044B2 (en) * | 2012-11-15 | 2015-06-16 | International Business Machines Corporation | On-chip diode with fully depleted semiconductor devices |
US8809139B2 (en) * | 2012-11-29 | 2014-08-19 | Taiwan Semiconductor Manufacturing Company, Ltd. | Fin-last FinFET and methods of forming same |
US9076759B2 (en) * | 2013-01-10 | 2015-07-07 | United Microelectronics Corp. | Semiconductor device and manufacturing method of the same |
JP6100535B2 (ja) * | 2013-01-18 | 2017-03-22 | ルネサスエレクトロニクス株式会社 | 半導体装置および半導体装置の製造方法 |
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US10461158B2 (en) | 2019-10-29 |
JP2013175700A (ja) | 2013-09-05 |
US9978839B2 (en) | 2018-05-22 |
US20200013857A1 (en) | 2020-01-09 |
US20230253456A1 (en) | 2023-08-10 |
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US11658211B2 (en) | 2023-05-23 |
US20170018611A1 (en) | 2017-01-19 |
US10263078B2 (en) | 2019-04-16 |
US9773872B2 (en) | 2017-09-26 |
US9484433B2 (en) | 2016-11-01 |
US20160056264A1 (en) | 2016-02-25 |
US9196705B2 (en) | 2015-11-24 |
US8941178B2 (en) | 2015-01-27 |
US20170294513A1 (en) | 2017-10-12 |
US20130187230A1 (en) | 2013-07-25 |
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