JP2018142575A - 半導体装置の製造方法および半導体装置 - Google Patents
半導体装置の製造方法および半導体装置 Download PDFInfo
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- JP2018142575A JP2018142575A JP2017034702A JP2017034702A JP2018142575A JP 2018142575 A JP2018142575 A JP 2018142575A JP 2017034702 A JP2017034702 A JP 2017034702A JP 2017034702 A JP2017034702 A JP 2017034702A JP 2018142575 A JP2018142575 A JP 2018142575A
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Abstract
【解決手段】SOI基板1Sに形成される半導体装置の製造工程において、ゲート幅方向の幅が第1の長さ以上の幅が広い活性領域の半導体層SLの外周端部上に部分的にエピタキシャル層EPI1を形成する。その後、ゲート幅方向の幅が第1の長さより短い幅が狭い活性領域および幅が広い活性領域の半導体層SL上にエピタキシャル層EPI2を形成する。これにより、幅が広い活性領域に半導体層SLとエピタキシャル層EPI1,EPI2との積層体で形成される半導体層SE1を形成し、幅が狭い活性領域に半導体層SLとエピタキシャル層EPI2との積層体で形成される半導体層SE1を形成する。
【選択図】図30
Description
半導体装置の高集積化を実現するために、電界効果トランジスタは、スケーリング則に基づいて微細化されてきている。ところが、微細化された電界効果トランジスタでは、短チャネル効果やしきい値電圧のばらつきが顕在化するため半導体装置の性能低下を招くことになる。この点に関し、SOI基板に形成された電界効果トランジスタは、半導体基板(バルク基板)に形成された電界効果トランジスタに比べて、短チャネル効果やしきい値電圧のばらつきが顕在化し難いため、半導体装置の性能が優れている。このため、例えば、回路線幅が90nm程度の世代以降の半導体装置においては、電界効果トランジスタをSOI基板上に形成している場合がある。
上記のようなSOI基板の問題を防止する構成例として、せり上げソースおよびドレイン構成がある。図3は、せり上げソースおよびドレイン構造を説明するためのSOI基板の要部断面図である。この構造においては、SOI基板1Sの半導体層SLにおいてソースおよびドレインの形成領域に、シリコンからなるエピタキシャル層EPIが積み上げられている。この場合、プラグPLGが接続される部分の半導体層の厚さが、半導体層SLとエピタキシャル層EPIとを合わせた厚さになるので、プラグPLG下の半導体層(エピタキシャル層EPI+半導体層SL)を、コンタクトホールCNTの形成時のエッチングストッパとして充分に機能させることができる。したがって、上記した半導体層SLと支持基板SUBとの導通不良を防止でき、電界効果トランジスタの動作不良を防止することができる。
ところで、上記図3に示したように、半導体層SL上だけにエピタキシャル層EPIを形成した構造では、以下に示す改善の余地が存在する。図4は、せり上げソースおよびドレイン構造におけるプラグの目外れに起因する問題点を説明するためのSOI基板の要部断面図である。ここでは、層間絶縁膜ILに形成されるプラグPLGの位置が、素子分離部STI側にずれる場合を考える。
上述したように、エピタキシャル層EPIを半導体層SL上だけでなく、素子分離部STIの一部上も覆うように形成するという構造(図5参照)を採用することによって、コンタクトホールCNTの形成位置が素子分離部STI側にずれる場合も含めて、プラグPLGの支持基板SUBへの突き抜けを防止できると考えられる。すなわち、プラグPLGを介した半導体層SLと支持基板SUBとの導通不良に起因する電界効果トランジスタの動作不良を防止することができると考えられる。
本発明者が見出した新たな知見は、素子分離部STIで囲まれた活性領域の幅(ゲート幅方向の幅)に依存して、活性領域の半導体層SL上に形成されるエピタキシャル層EPIの端部形状が異なるというものである。定性的に、本発明者が見出した新たな知見は、活性領域の幅が小さい場合、エピタキシャル層EPIの端部形状は、「ファセット構造」となる一方、活性領域の幅が大きい場合、エピタキシャル層EPIの端部形状は、「裾引き構造」となるというものである。
図9は、エピタキシャル成長法を使用してSOI基板の半導体層上にエピタキシャル層を成長させる際の成長面を示す図である。半導体層SLの中央の上方では、図9の矢印A1で示すように、(100)面に沿ってエピタキシャル層が成長する。これは、エピタキシャル層の下地である半導体層SLの表面が(100)面であり、この半導体層SLの(100)面上にエピタキシャル層が成長するからである。
次に、本発明者は、上記した「裾引き構造」の新たな問題点を見出した。その問題点について図14〜図16を参照して説明する。
本実施の形態半導体装置の製造方法の一例について図17の工程図に沿って図18〜図33を参照しながら説明する。なお、以下の図においては図面を見易くするため平面図においても部分的にハッチングを付した。
次に、上記のようにして製造された半導体装置の一例について図34〜図39を参照して説明する。
ACTw 活性領域
ACTn 活性領域
BOX 埋め込み絶縁膜
DR,DR1,DR2 ドレイン領域
GOX ゲート絶縁膜
EPI,EPI1,EPI2 エピタキシャル層
G,G1,G2 ゲート電極
HM ハードマスク膜
HM1,HM2 ハードマスクパターン
IL 層間絶縁膜
WL,WL1,WL2 ウェル
PLG,PLGs,PLGd,PLGp プラグ
Q1 電界効果トランジスタ
Q2 電界効果トランジスタ
SL 半導体層
SE1 半導体層
SE2 半導体層
SF シリサイド層
SR,SR1,SR2 ソース領域
STI 素子分離部
SUB 支持基板
θ1,θ2 ファセット角度
Claims (18)
- (a)支持基板と、その上に形成された埋め込み絶縁膜と、その上に形成された半導体層とを備えるSOI基板において前記半導体層側に分離部を形成することにより、前記SOI基板に前記分離部で区分けされる活性領域を形成する工程、
(b)前記SOI基板に対して第1の選択エピタキシャル成長処理を施すことにより、前記活性領域内の前記半導体層の外周端部上に第1のエピタキシャル層を選択的に形成する工程、
(c)前記(b)工程後、前記SOI基板に対して第2の選択エピタキシャル成長処理を施すことにより、前記活性領域内の前記半導体層および前記第1のエピタキシャル層上に第2のエピタキシャル層を選択的に形成する工程、
を有する、半導体装置の製造方法。 - 請求項1記載の半導体装置の製造方法において、
前記活性領域は、
第1方向の幅が第1の長さ以上の長さを持つ第1の活性領域と、
前記第1方向の幅が前記第1の長さより短い第2の活性領域と、
を有しており、
前記第1の選択エピタキシャル成長処理は、前記第1の活性領域に施し、
前記第2の選択エピタキシャル成長処理は、前記第1の活性領域および前記第2の活性領域に施す、半導体装置の製造方法。 - 請求項2記載の半導体装置の製造方法において、
前記第1の選択エピタキシャル成長処理は、前記第1の活性領域の前記半導体層において前記第1方向の両端部に施す、半導体装置の製造方法。 - 請求項2記載の半導体装置の製造方法において、
前記(a)工程は、さらに、
(a1)前記分離部の形成後、前記第1の活性領域および前記第2の活性領域にゲート電極を形成する工程、
(a2)前記(a1)工程後、前記ゲート電極の側面にサイドウォールスペーサを形成する工程、
を有し、
前記第1方向が前記ゲート電極のゲート幅方向である、半導体装置の製造方法。 - 請求項4記載の半導体装置の製造方法において、
前記(b)工程において、
(b1)前記SOI基板上に、前記第1の活性領域内の前記半導体層の外周端部が部分的に露出されるマスキング層を形成する工程、
(b2)前記(b1)工程後、前記第1の選択エピタキシャル成長処理を施す工程、
(b3)前記(b2)工程後、前記マスキング層を除去する工程、
(b4)前記(b3)工程後、前記第2の選択エピタキシャル成長処理を施す工程、
を有する、半導体装置の製造方法。 - 請求項5記載の半導体装置の製造方法において、
前記サイドウォールスペーサを窒化シリコン膜で形成し、前記マスキング層を酸化シリコン膜で形成する、半導体装置の製造方法。 - 請求項5記載の半導体装置の製造方法において、
前記サイドウォールスペーサを酸化シリコン膜で形成し、前記マスキング層を窒化シリコン膜で形成する、半導体装置の製造方法。 - 請求項2記載の半導体装置の製造方法において、
前記第1の長さが、250nmである、半導体装置の製造方法。 - 請求項2記載の半導体装置の製造方法において、
前記分離部の端部から90nm以内の箇所に前記第1のエピタキシャル層を形成する、半導体装置の製造方法。 - 請求項2記載の半導体装置の製造方法において、
前記第1の選択エピタキシャル成長処理および前記第2の選択エピタキシャル成長処理においては、ジクロルシランと塩化水素と水素とを含むガスを使用し、かつ、圧力が10Pa以上1000Pa以下であり、かつ、温度が700℃以上、800℃以下の成膜条件が使用される、半導体装置の製造方法。 - 請求項2記載の半導体装置の製造方法において、
前記第1の選択エピタキシャル成長処理および前記第2の選択エピタキシャル成長処理においては、シランと塩素と水素とを含むガスを使用し、かつ、圧力が10Pa以上1000Pa以下であり、かつ、温度が500℃以上、700℃以下の成膜条件が使用される、半導体装置の製造方法。 - 請求項1記載の半導体装置の製造方法において、
(d)前記(c)工程後、前記SOI基板上に絶縁膜を堆積する工程、
(e)前記絶縁膜に前記第2のエピタキシャル層に接続されるプラグを形成する工程、
を有する、半導体装置の製造方法。 - 支持基板と、
前記支持基板上に設けられた埋め込み絶縁膜と、
前記埋め込み絶縁膜上に設けられた半導体層と、
を備えるSOI基板に、
前記半導体層側に形成された分離部と、
前記分離部で区分けされた複数の活性領域と、
を備え、
前記複数の活性領域は、
第1方向の幅が第1の長さ以上の長さを持つ第1の活性領域と、
前記第1方向の幅が前記第1の長さよりも短い第2の活性領域と、
を有しており、
前記第1の活性領域および前記第2の活性領域内の前記半導体層上に形成されたエピタキシャル層の外周端部において、前記埋め込み絶縁膜と前記半導体層との境界面と、前記エピタキシャル層の外周端部の傾斜面との成す角度が30°以上である、半導体装置。 - 請求項13記載の半導体装置において、
前記半導体層とその上に積層された前記エピタキシャル層との積層体において、前記分離部の端部と前記半導体層との境界から60nmまでの範囲内における厚さが、前記積層体の中央の厚さの50%以上である、半導体装置。 - 請求項13記載の半導体装置において、
前記分離部において、前記第1の活性領域および前記第2の活性領域の外周に隣接する部分に、前記第1の活性領域および前記第2の活性領域の各々の前記半導体層の側面の一部が露出する窪みが形成されており、
前記第1の活性領域および前記第2の活性領域の前記エピタキシャル層の外周端部が前記窪みに張り出し、かつ、前記窪みから露出する前記半導体層の側面を覆うように形成されている、半導体装置。 - 請求項13記載の半導体装置において、
前記SOI基板上に設けられた絶縁膜と、
前記絶縁膜に設けられ、前記エピタキシャル層に接続されるプラグと、
を備える、半導体装置。 - 請求項13記載の半導体装置において、
前記第1の活性領域および前記第2の活性領域に電界効果トランジスタが形成されており、前記第1方向が前記電界効果トランジスタのゲート電極のゲート幅方向である、半導体装置。 - 請求項13記載の半導体装置において、
前記第1の長さが、250nmである、半導体装置。
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WO2023136003A1 (ja) * | 2022-01-12 | 2023-07-20 | 信越半導体株式会社 | マイクロled構造体を有するウェーハ、マイクロled構造体を有するウェーハの製造方法およびマイクロled構造体を有する接合型半導体ウェーハの製造方法 |
JP2023102639A (ja) * | 2022-01-12 | 2023-07-25 | 信越半導体株式会社 | マイクロled構造体を有するウェーハ、マイクロled構造体を有するウェーハの製造方法およびマイクロled構造体を有する接合型半導体ウェーハの製造方法 |
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CN108511393A (zh) | 2018-09-07 |
TW201841255A (zh) | 2018-11-16 |
JP6867188B2 (ja) | 2021-04-28 |
US10366914B2 (en) | 2019-07-30 |
US20180247861A1 (en) | 2018-08-30 |
CN108511393B (zh) | 2023-09-19 |
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