JP5614184B2 - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
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- JP5614184B2 JP5614184B2 JP2010199226A JP2010199226A JP5614184B2 JP 5614184 B2 JP5614184 B2 JP 5614184B2 JP 2010199226 A JP2010199226 A JP 2010199226A JP 2010199226 A JP2010199226 A JP 2010199226A JP 5614184 B2 JP5614184 B2 JP 5614184B2
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- 239000004065 semiconductor Substances 0.000 title claims description 53
- 238000004519 manufacturing process Methods 0.000 title claims description 27
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims description 36
- 238000000034 method Methods 0.000 claims description 36
- 239000000758 substrate Substances 0.000 claims description 33
- 230000015572 biosynthetic process Effects 0.000 claims description 29
- 239000002019 doping agent Substances 0.000 claims description 29
- 238000005530 etching Methods 0.000 claims description 24
- 238000002513 implantation Methods 0.000 claims description 18
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 11
- 229910052710 silicon Inorganic materials 0.000 claims description 11
- 239000010703 silicon Substances 0.000 claims description 11
- 229910052785 arsenic Inorganic materials 0.000 claims description 8
- 238000005516 engineering process Methods 0.000 claims description 7
- 229910052698 phosphorus Inorganic materials 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 6
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical group [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 2
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 claims description 2
- 239000011574 phosphorus Substances 0.000 claims description 2
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 claims 1
- 108091006146 Channels Proteins 0.000 description 28
- 239000010410 layer Substances 0.000 description 24
- 230000008569 process Effects 0.000 description 15
- 239000000460 chlorine Substances 0.000 description 8
- 238000009792 diffusion process Methods 0.000 description 8
- 238000005468 ion implantation Methods 0.000 description 7
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 6
- 230000005669 field effect Effects 0.000 description 5
- 230000003071 parasitic effect Effects 0.000 description 5
- 230000009467 reduction Effects 0.000 description 5
- 238000013459 approach Methods 0.000 description 4
- 229910052796 boron Inorganic materials 0.000 description 4
- 238000001020 plasma etching Methods 0.000 description 4
- 230000001681 protective effect Effects 0.000 description 4
- 108010075750 P-Type Calcium Channels Proteins 0.000 description 3
- 229910021332 silicide Inorganic materials 0.000 description 3
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 3
- 108090000699 N-Type Calcium Channels Proteins 0.000 description 2
- 102000004129 N-Type Calcium Channels Human genes 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
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- 238000011065 in-situ storage Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- CGRVKSPUKAFTBN-UHFFFAOYSA-N N-silylbutan-1-amine Chemical compound CCCCN[SiH3] CGRVKSPUKAFTBN-UHFFFAOYSA-N 0.000 description 1
- 229910005883 NiSi Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
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- 239000012535 impurity Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
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- 238000012986 modification Methods 0.000 description 1
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- 238000000206 photolithography Methods 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823814—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the source or drain structures, e.g. specific source or drain implants or silicided source or drain structures or raised source or drain structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823807—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the channel structures, e.g. channel implants, halo or pocket implants, or channel materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7842—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate
- H01L29/7848—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate the means being located in the source/drain region, e.g. SiGe source and drain
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Recrystallisation Techniques (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Description
111、211 半導体基板
112 チャネル領域
121、221 ゲート絶縁膜
122、222 ゲート電極
124、224 サイドウォール
130、230 階段状ソース/ドレイン・エピタキシャル領域(ストレッサ)
131、231 エピタキシャル領域の第1領域
132、232 エピタキシャル領域の第2領域
230’ 階段状リセス
231’ 第1のリセス(深いリセス)
232’ 第2のリセス(浅いリセス)
242 Siキャップ層
243 シリサイド層
251 ドーパント注入領域(犠牲領域)
252 保護マスク
Claims (7)
- 歪みシリコン技術を用いたP型トランジスタと、歪みシリコン技術を用いないN型トランジスタとを含む半導体装置の製造方法であって、
半導体基板上にゲート電極を形成する工程と、
前記ゲート電極をマスクとして前記半導体基板にドーパントを注入し、前記半導体基板内にドーパント注入領域を形成する工程であり、前記半導体基板のP型トランジスタ形成領域及びN型トランジスタ形成領域の双方に同じドーパントを注入することを含む工程と、
前記ゲート電極の側壁にサイドウォールを形成する工程と、
前記P型トランジスタ形成領域において、前記ゲート電極及び前記サイドウォールをマスクとして前記半導体基板をエッチングして第1のリセスを形成する工程と、
前記P型トランジスタ形成領域において、前記サイドウォールの下方に位置する前記ドーパント注入領域を除去し、第2のリセスを形成する工程と、
前記P型トランジスタ形成領域において、前記第1のリセス及び前記第2のリセス内に半導体材料を成長させてソース/ドレイン領域を形成する工程と、
を有する半導体装置の製造方法。 - 前記第2のリセスを形成する工程及び前記ソース/ドレイン領域を形成する工程は、同一のエピタキシャル成長装置にて行われる、請求項1に記載の半導体装置の製造方法。
- 前記半導体基板はシリコン基板であり、前記ドーパントはヒ素又はリンである、請求項1又は2に記載の半導体装置の製造方法。
- 前記第2のリセスを形成する工程は、塩素ガスを含むガスを用いて、前記ドーパント注入領域を前記半導体基板に対して選択的にエッチングすることを含む、請求項3に記載の半導体装置の製造方法。
- 前記ドーパント注入領域を形成する工程は、前記ドーパントとしてヒ素を、1×1014cm−2から1×1016cm−2の範囲内のドーズ量で注入する、請求項3又は4に記載の半導体装置の製造方法。
- 前記ソース/ドレイン領域はシリコンゲルマニウムを有する、請求項3乃至5の何れか一項に記載の半導体装置の製造方法。
- 前記ソース/ドレイン領域上にシリコン層を形成する工程、を更に有する請求項3乃至6の何れか一項に記載の半導体装置の製造方法。
Priority Applications (2)
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JP2010199226A JP5614184B2 (ja) | 2010-09-06 | 2010-09-06 | 半導体装置の製造方法 |
US13/190,696 US8409958B2 (en) | 2010-09-06 | 2011-07-26 | Method of manufacturing semiconductor device |
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JP2010199226A JP5614184B2 (ja) | 2010-09-06 | 2010-09-06 | 半導体装置の製造方法 |
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JP2012059783A JP2012059783A (ja) | 2012-03-22 |
JP5614184B2 true JP5614184B2 (ja) | 2014-10-29 |
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JP2010199226A Expired - Fee Related JP5614184B2 (ja) | 2010-09-06 | 2010-09-06 | 半導体装置の製造方法 |
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US (1) | US8409958B2 (ja) |
JP (1) | JP5614184B2 (ja) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10163724B2 (en) * | 2012-03-01 | 2018-12-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Integrated circuit device and method of manufacturing same |
US9018065B2 (en) * | 2012-05-08 | 2015-04-28 | Globalfoundries Inc. | Horizontal epitaxy furnace for channel SiGe formation |
US8703578B2 (en) * | 2012-05-29 | 2014-04-22 | Globalfoundries Singapore Pte. Ltd. | Middle in-situ doped SiGe junctions for PMOS devices on 28 nm low power/high performance technologies using a silicon oxide encapsulation, early halo and extension implantations |
TWI605592B (zh) | 2012-11-22 | 2017-11-11 | 三星電子股份有限公司 | 在凹處包括一應力件的半導體裝置及其形成方法(二) |
KR102059526B1 (ko) | 2012-11-22 | 2019-12-26 | 삼성전자주식회사 | 내장 스트레서를 갖는 반도체 소자 형성 방법 및 관련된 소자 |
US9691898B2 (en) | 2013-12-19 | 2017-06-27 | Taiwan Semiconductor Manufacturing Co., Ltd. | Germanium profile for channel strain |
US9379214B2 (en) * | 2014-02-14 | 2016-06-28 | Semi Solutions Llc | Reduced variation MOSFET using a drain-extension-last process |
US11049939B2 (en) | 2015-08-03 | 2021-06-29 | Semiwise Limited | Reduced local threshold voltage variation MOSFET using multiple layers of epi for improved device operation |
US10304957B2 (en) | 2016-09-13 | 2019-05-28 | Qualcomm Incorporated | FinFET with reduced series total resistance |
US11373696B1 (en) | 2021-02-19 | 2022-06-28 | Nif/T, Llc | FFT-dram |
Family Cites Families (13)
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JP2003109969A (ja) * | 2001-09-28 | 2003-04-11 | Toshiba Corp | 半導体装置及びその製造方法 |
US6921913B2 (en) * | 2003-03-04 | 2005-07-26 | Taiwan Semiconductor Manufacturing Co., Ltd. | Strained-channel transistor structure with lattice-mismatched zone |
US7033437B2 (en) * | 2003-06-26 | 2006-04-25 | Rj Mears, Llc | Method for making semiconductor device including band-engineered superlattice |
JP4837902B2 (ja) * | 2004-06-24 | 2011-12-14 | 富士通セミコンダクター株式会社 | 半導体装置 |
KR100882930B1 (ko) * | 2004-12-17 | 2009-02-10 | 삼성전자주식회사 | 소오스 및 드레인 영역들을 갖는 씨모스 반도체 소자들 및 그 제조방법들 |
US7195985B2 (en) * | 2005-01-04 | 2007-03-27 | Intel Corporation | CMOS transistor junction regions formed by a CVD etching and deposition sequence |
JP4984665B2 (ja) * | 2005-06-22 | 2012-07-25 | 富士通セミコンダクター株式会社 | 半導体装置およびその製造方法 |
US7470943B2 (en) * | 2005-08-22 | 2008-12-30 | International Business Machines Corporation | High performance MOSFET comprising a stressed gate metal silicide layer and method of fabricating the same |
US8138053B2 (en) * | 2007-01-09 | 2012-03-20 | International Business Machines Corporation | Method of forming source and drain of field-effect-transistor and structure thereof |
US7732285B2 (en) * | 2007-03-28 | 2010-06-08 | Intel Corporation | Semiconductor device having self-aligned epitaxial source and drain extensions |
US7736957B2 (en) * | 2007-05-31 | 2010-06-15 | Freescale Semiconductor, Inc. | Method of making a semiconductor device with embedded stressor |
JP2009182109A (ja) * | 2008-01-30 | 2009-08-13 | Toshiba Corp | 半導体装置 |
JP5278022B2 (ja) * | 2009-02-17 | 2013-09-04 | 富士通セミコンダクター株式会社 | 半導体装置の製造方法 |
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US20120058610A1 (en) | 2012-03-08 |
US8409958B2 (en) | 2013-04-02 |
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