CN109844934B - 用于低温接合的结构和方法 - Google Patents

用于低温接合的结构和方法 Download PDF

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Publication number
CN109844934B
CN109844934B CN201780064766.8A CN201780064766A CN109844934B CN 109844934 B CN109844934 B CN 109844934B CN 201780064766 A CN201780064766 A CN 201780064766A CN 109844934 B CN109844934 B CN 109844934B
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electrically conductive
nanoparticles
layer
conductive
substrate
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CN109844934A (zh
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塞普里昂·艾米卡·乌卓
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Edya Semiconductor Technology Co ltd
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Edya Semiconductor Technology Co ltd
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Priority claimed from US15/336,192 external-priority patent/US10886250B2/en
Application filed by Edya Semiconductor Technology Co ltd filed Critical Edya Semiconductor Technology Co ltd
Priority to CN202310944897.2A priority Critical patent/CN116825750A/zh
Priority to CN202310942827.3A priority patent/CN116825749A/zh
Priority to CN202310947688.3A priority patent/CN116960098A/zh
Publication of CN109844934A publication Critical patent/CN109844934A/zh
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Abstract

一种制造组件的方法，其可包含将在第一基板的第一表面处的第一电性传导元件的顶表面与在第二基板的主要表面处的第二电性传导元件的顶表面并置。其中为下列中之一者：所述第一传导元件的所述顶表面可下凹至所述第一表面之下，或所述第二基板的所述顶表面可下凹至所述主要表面之下。电性传导纳米粒子是被设置在所述第一传导元件和所述第二传导元件的所述顶表面之间。所述传导纳米粒子具有的长度尺寸是小于100纳米。所述方法亦可包含至少在所述经并置的第一传导元件和第二传导元件的界面处提高温度到一结合温度，在所述结合温度时所述传导纳米粒子可造成冶金结合形成于所述经并置的第一传导元件和第二传导元件之间。

Description

用于低温接合的结构和方法
相关申请案的交叉引用
本申请案为2015年7月10日申请的美国申请案第14/796,381号的部分接续申请案，所有该申请案的揭示内容在此以引用的方式并入本文中。
背景技术
本发明关于微电子封装、关于用于制造微电子封装的构件以及关于制造所述封装和构件的方法。
微电子装置通常包括半导体材料的薄片，例如通常称为晶粒或半导体晶片的硅或砷化镓。半导体晶片通常作为单独的预包装单元而被提供。在一些单元设计中，所述半导体晶片被安装到基板或晶片载体，所述基板或晶片载体又被安装在例如印刷电路板的电路面板上。
在半导体晶片的一面制作主动电路。为了便于与主动电路的电连接，所述晶片在同一面上设有接合衬垫。所述接合衬垫通常以规则的阵列或者围绕晶粒的边缘而放置，或者对于许多记忆体装置则是放置于晶粒中心。所述接合衬垫通常由0.5μm厚的传导金属例如铜、金或铝所制成。所述接合衬垫的尺寸将随着装置类型而改变，但通常在一侧上测量几十到几百微米。
覆晶互连是用于将半导体晶片上的接合衬垫传导性地连接到基板上的接触衬垫或一个或多个其他半导体晶片的常用方式。在覆晶互连中，通常将金属块放置或形成在每个接合衬垫上。然后倒置晶粒，使得金属块提供接合衬垫和基板之间的电通路以及晶粒与基板的机械连接。
覆晶制程有许多变化，但是一种常见的配置是使用作为金属块的焊料以及焊料的熔化以将其焊接到接合衬垫和基板的方法。当金属块熔化时，焊料流动形成截断的球体。
以覆晶方式封装半导体晶片变得越来越困难，其中晶片的接触点朝向封装基板的相应接触点。晶片接触点的密度增加导致接触点之间的间距减小。因此，可用于将每个晶片接触点结合到相应封装接触点的焊料的体积减小。使用相对小体积的焊料进行接触点连接的风险在于，整个焊料体积可能会与接触点的金属转换成脆性的金属间化合物(inter-metallic compound)，这可能会损害焊接点的可靠性。
再者，较小的焊接点使得接触承载晶片表面与封装基板的相邻表面之间的隔离高度(stand-off height)降低。然而，当接触密度非常高时，为了在晶片和封装基板的相邻表面之间形成适当的底部填充，隔离高度可能需要大于简单焊接点的高度。此外，为了使封装基板的接触点相对于晶片的接触点稍微移动，以便补偿晶片和基板之间的不同的热膨胀，可能有必要要求最小的隔离高度。
已经提出的解决这些问题的一种方法涉及借由使用覆盖在晶片前表面上的光阻遮罩直接在晶片接触点上电镀金属(例如铜)来形成金属柱，以定义柱的位置和高度。然后可以将具有从其上的接合衬垫延伸的柱的晶片接合到封装基板的对应接触点。或者，可以采取类似的方法在基板的曝露衬垫上形成金属柱。然后可以将具有从其上的接触点延伸的柱的所述基板连接到晶片的相应接触点。
然而，当在大面积上同时执行时，借由电镀形成柱的过程可能是有问题的，所述大面积例如晶圆的整个区域(具有约200毫米到约300毫米的直径)或在基板面板的整个区域(通常具有约500平方毫米的尺寸)。很难在整个基板上实现高度、尺寸和形状均匀的金属柱。当柱的尺寸和高度非常小时，例如柱直径约75微米或更小，柱高约50微米或更小时，所有这些都很难实现。光阻遮罩厚度的变化、图案布局的均匀性、衬垫密度的局部变化、电解质的质量传输的局部变化、电镀电流分布的局部变化或者图案的形状尺寸的变化诸如晶片或基板面板的区域可能对于获得具有统一高度、尺寸和形状的柱有影响。
在另一种方法中，可以将焊膏或其他金属填充的焊膏的凸块模印到基板面板的曝露表面上的传导衬垫上。然后可以借由随后的压印使凸起变平，以提高平面度。然而，可能需要严格的制程控制来形成具有均匀焊料体积的凸块，特别是当间距非常小时，例如约50微米或更小时。当间距非常小，例如大约50微米或更小时，消除凸块之间焊料桥接的可能性也是非常困难的。
尽管覆晶互连有了进展，但仍需要进一步改进。
发明内容
一种制造组件的方法，其包含形成第一传导元件在第一构件的基板的第一表面，所述第一传导元件在远离所述第一表面的方向上延伸，以及借由曝露于无电电镀槽而形成传导纳米粒子在所述传导元件的表面，所述传导纳米粒子具有的长度尺寸是小于100纳米。所述方法亦可包含将第一传导元件的所述表面与第二传导元件的对应表面并置于第二构件的基板的主要表面处，且所述传导纳米粒子被设置在所述第一传导元件和所述第二传导元件的该些表面之间。所述方法可进一步包含在所述经并置的第一传导元件和第二传导元件的界面处提高温度到一结合温度，在所述结合温度时，所述些传导纳米粒子造成冶金结合形成于所述经并置的第一传导元件和第二传导元件之间。
在一个实施例中，所述第一传导元件可为位在所述第一表面处的多个第一传导元件中的一个，且所述第二传导元件可为位在所述主要表面处的多个第二传导元件中的一个，所述第一传导元件和所述第二传导元件的对应表面是彼此并置。所述方法亦可包含，在所述并置期间中，借由在经并置的所述第一传导元件以及所述第二传导元件中的不同者之间的不同距离挤压所述接合区域的所述厚度，所述接合区域的所述厚度在经并置的所述第一传导元件和所述第二传导元件中不同的传导元件之间变化高达3微米，以迁就至少一些第一传导元件的顶表面的非共平面性。
在特别的实施例中，所述第一传导元件可为实质上刚性杆，并且所述实质上刚性杆的表面可为顶表面，所述顶表面突出高于所述第一构件的所述第一表面一高度，使得所述顶表面是远离所述第一表面，所述杆具有远离所述顶表面以大角度(substantialangle)延伸的边缘表面。所述传导纳米粒子的形成可以沉积所述传导纳米粒子于所述杆的所述边缘表面上，所述传导纳米粒子实质上完全覆盖所述杆的顶表面和边缘表面。
在一实施例中，在提高温度步骤之后，经并置的所述第一传导元件和第二传导元件的界面可包含微通孔，每个微通孔具有小于0.5微米的最大宽度。在一特定实施例中，所述第一构件和所述第二构件中的至少一个可以是包含主动半导体装置的微电子元件，并且所述结合温度可以不高于150℃。在一范例性实施例中，所述第一传导元件和所述第二传导元件中的至少一个可包含电性传导衬垫、电性传导迹线或电性传导的实质上刚性杆。
制造组件之另外的方法可包含形成传导纳米粒子于第一构件的基板的第一表面处的第一传导元件的表面，其借由在大于所述电解槽的质量传输限制电流密度的一电流密度的情况之下，将所述第一传导元件曝露于电解槽，所述传导纳米粒子具有的长度尺寸是小于100纳米。所述方法亦可包含将所述第一传导元件的表面与在第二构件的基板的主要表面处的第二传导元件的对应表面并置，且具有所述传导纳米粒子被设置在所述第一传导元件和所述第二传导元件的该些表面之间。所述方法可进一步包含至少在经并置的所述第一传导元件和第二传导元件的界面处提高温度到一结合温度，在所述结合温度时，所述些传导纳米粒子造成冶金结合形成于经并置的所述第一传导元件和第二传导元件之间。
在一范例中，所述方法亦可包含，在形成所述传导纳米粒子之前，借由沉积一种子层于所述第一构件的所述基板的所述第一表面上以形成多个第一传导元件并且从所述种子层延伸形成所述第一传导元件。在特定实施例中，所述方法也可以包含在形成所述传导纳米粒子之后，形成介电质遮罩来覆盖所述传导纳米粒子并且从相邻于所述第一传导元件的所述第一表面移除所述种子层的一部分。在一实施例中，所述方法也可以包含，在形成所述传导纳米粒子之前，将所述第一传导元件形成在所述第一构件的基板的所述第一表面上，所述第一传导元件从所述第一表面朝远离的方向延伸。
在特定的范例中，所述第一传导元件可以是实质上刚性杆，并且所述第一传导元件的所述表面可以是一顶表面，所述顶表面突出超过所述第一构件的所述第一表面一高度，使得所述顶表面是远离所述第一表面，所述杆具有以大角度从其之顶表面向外延伸的边缘表面。在一范例性实施例中，所述第二传导元件可以是实质上刚性杆，并且所述第二传导元件的所述表面可以是一顶表面，所述顶表面突出超过所述第二构件的所述主要表面一高度，使得所述顶表面是远离所述主要表面，所述第二构件的所述杆具有以大角度从其之顶表面向外延伸的边缘表面。在一范例中，所述第一传导元件和所述第二传导元件中的至少一个可以包含电性传导衬垫、电性传导迹线或电性传导的实质上刚性杆。
一种组件，其可包含第一构件，所述第一构件包含具有第一表面的基板以及在所述第一表面处的多个实质上刚性的第一杆，所述第一杆在第一方向上从所述第一表面向外延伸，每个第一杆具有顶表面，所述顶表面通常面向所述第一方向，每个所述第一杆的顶表面突出超过所述第一表面一高度，使得所述顶表面从所述第一表面远离，每个第一杆具有以大角度从其之顶表面向外延伸的边缘表面。所述组件也可以包含第二构件，所述第二构件包含具有主要表面的基板以及在所述主要表面处的多个第二传导元件，每个第二传导元件具有顶表面，所述顶表面通常面向第二方向。
所述第一杆可以与所述第二传导元件结合，使得所述第一杆的顶表面至少部分地面对所述第二传导元件的顶表面。至少一些所述第一杆的顶表面可以互相之间不共平面。每个第一杆可借由包含杂质的接合区域而被电性互连至所述第二传导元件中对应的一个，所述杂质显示在接合制程中使用长度小于100纳米的金属纳米颗粒的结构证据。每个接合区域可至少部分地渗透到所述第一杆和所述第二传导元件中。每个接合区域可包含多个微通孔。每个微通孔可具有小于0.5微米的最大宽度。不同的所述接合区域的厚度变化高达3微米，如此以迁就至少一些所述第一杆的不共平面的该些顶表面。
在一范例中，所述组件也可包含阻障层，所述阻障层实质上完全地覆盖每个第一杆的所述顶表面和所述边缘表面，每个接合区域是位于个别的第一杆的所述阻障层和对应的所述第二传导元件的顶表面之间。在特定实施例中，所述多个第二传导元件可以是实质上刚性的第二杆，所述第二杆从所述主要表面在所述第二方向上向外延伸，并且每个所述第二杆的所述顶表面可突出超过所述第二构件的所述主要表面一高度，使得所述顶表面是远离所述主要表面，每个第二杆具有以大角度从其之顶表面向外延伸的边缘表面。在一实施例中，每个所述第一杆和第二杆的所述边缘表面可具有至少3纳米的表面粗糙度。在特定的范例中，所述第一或第二构件中的至少一个可以是包含主动半导体装置的微电子元件。
在一范例性实施例中，所述第一杆和所述第二传导元件可各自由实质上相同的材料所组成，并且所述接合区域可包含从下列群组中选择的至少一个金属：铜、金、银、镍、锡、铝、含有银的合金、含有铟的合金、含有锡的合金。在一范例中，所述第一杆和第二传导元件中的至少一者可包含电性传导衬垫、电性传导迹线或电性传导的实质上刚性杆。在特定实施例中，所述第一构件可以是微电子元件晶圆，其包含多个微电子元件部份，每个微电子元件部份包含在所述第一表面处的所述第一杆的相应子集，并且所述第二构件可以是基板面板的至少一部份，所述基板面板包含多个基板部分，每个基板部份包含在所述主要表面处的所述第二传导元件的相应子集。
另一种制造组件的方法包含将在第一基板的第一表面处的第一传导元件的顶表面与在第二基板的主要表面处的第二传导元件的顶表面并置。其中为下列中之一者：所述第一传导元件的所述顶表面可以是下凹至所述第一基板的所述第一表面之下，或所述第二传导元件的所述顶表面可以是下凹至所述第二基板的主要表面之下。电性传导纳米粒子可以被设置在所述第一传导元件和所述第二传导元件的所述顶表面之间。所述传导纳米粒子可具有的长度尺寸是小于100纳米。所述方法也可以包含在经并置的第一和第二传导元件的界面处提高温度到一结合温度，在所述结合温度时，所述传导纳米粒子可造成冶金结合形成于所述经并置的第一传导元件和第二传导元件之间。
在特定实施例中，所述方法也可以包含形成所述电性传导纳米粒子，其包含将至少一个接收表面以一电流密度曝露于无电电镀槽或电解槽，其中所述电流密度大于所述电解槽的所述质量传输限制电流密度，且所述至少一个接收表面是所述第一和第二传导元件的所述顶表面中的至少一个。在一范例中，所述第一传导元件和所述第二传导元件中的至少一个可以包含电性传导衬垫、电性传导迹线或电性传导的实质上刚性杆。在一范例性实施例中，所述第一传导元件可以是实质上刚性杆。所述实质上刚性杆的所述顶表面可以是远离所述第一构件的所述第一表面并且可以突出超过所述第一表面一高度。所述实质上刚性杆可具有以大角度从其之顶表面向外延伸的边缘表面。所述第二传导元件的顶表面可被设置在凹槽中，所述凹槽延伸于所述主要表面之下。
在一范例中，所述第一传导元件可以是实质上刚性杆。所述实质上刚性杆的所述顶表面可以是远离所述第一构件的所述第一表面并且可突出超过所述第一表面一高度。所述实质上刚性杆具有以大角度从其之顶表面向外延伸的边缘表面。在所述并置之后，所述实质上刚性杆的所述顶表面可被设置在凹槽中，所述凹槽延伸于所述第二基板的所述主要表面之下。
在特定的范例中，所述方法也可以包含蚀刻所述第二构件的所述基板的主要表面以形成所述凹槽并且曝露在所述凹槽之中的所述第二传导元件的顶表面。在一实施例中，在所述第一电性传导元件和所述第二电性传导元件的顶表面的并置之前，所述电性传导纳米粒子可被设置在所述第一电性传导元件和所述第二电性传导元件两者的顶表面上。在一范例中，在所述第一电性传导元件和所述第二电性传导元件的顶表面的并置之前，所述电性传导纳米粒子可被设置在所述第一或第二传导元件中的一者的顶表面上。在特定实施例中，在所述第一电性传导元件和所述第二电性传导元件的顶表面的并置之前，所述传导纳米粒子可包含覆盖于每个顶表面的第一层传导纳米粒子和第二层传导纳米粒子。
所述第一层传导纳米粒子可被设置在个别的顶表面上并且所述第二层传导纳米粒子可被设置在所述第一层传导纳米粒子上。所述第二层传导纳米粒子可包含至少一种材料，其不同于所述第一层传导纳米粒子所包含的至少一种材料。在一范例中，在所述第一传导元件和所述第二传导元件的顶表面的并置之前，在每个顶表面上的所述传导纳米粒子可包含第三层电性传导纳米粒子，所述第三层电性传导纳米粒子被形成在个别的第二层电性传导纳米粒子上。所述第三层电性传导纳米粒子可包含至少一种材料，其不同于所述第二层电性传导纳米粒子所包含的至少一种材料。所述第二层传导纳米粒子可包含阻障金属，其经配置以避免所述第三层传导纳米粒子的金属渗透到所述第一层传导纳米粒子之中。
在一范例性实施例中，所述方法也可以包含在所述温度被升高之前，将焊料沉积于在所述第一传导元件和所述第二传导元件的顶表面中的至少一个上的所述传导纳米粒子之上。在所述温度的升高过程中，所述焊料可经由毛细作用而填充在至少一些所述传导纳米粒子之间的间隙。在特定的范例中，所述第一构件的所述基板的所述第一表面以及所述第二构件的所述基板的所述主要表面可各个包含介电材料。在所述温度的升高过程中，所述第一表面的介电材料可直接地与所述主要表面的介电材料接合。在一实施例中，在所述第一表面以及所述主要表面处的介电材料可各自包含B阶段材料(B-stage material)层，所述B阶段材料层是不会被完全地固化。在所述温度的升高过程中，所述B阶段材料层可被完全地固化。
另外的组件可包含第一构件，其包含具有第一表面的基板和在所述第一表面处的多个金属的实质上刚性的第一杆。所述第一杆可在第一方向上从所述第一表面向外延伸。每个第一杆可具有一顶表面，其通常面向所述第一方向。每个所述第一杆的顶表面可突出超过所述第一表面一高度，使得所述顶表面远离所述第一表面。每个第一杆可具有以大角度从其之顶表面向外延伸的边缘表面。所述组件也可以包含第二构件，其包含具有主要表面的基板以及曝露于所述主要表面处的多个第二传导元件。每个第二传导元件可具有顶表面，其通常面向第二方向。
每个第二传导元件的所述顶表面可被曝露在凹槽中，所述凹槽延伸于所述主要表面之下。所述第一杆可与所述第二传导元件结合，使得所述第一杆的顶表面至少部分地面对所述第二传导元件的顶表面，并且使得至少一些所述第一杆至少部分地延伸到所述第二构件的对应的所述凹槽之中。每个第一杆可借由一接合区域而电性地互连到所述第二传导元件中对应的一者，所述接合区域包含杂质，所述杂质显示在接合制程中使用长度小于100纳米的传导纳米颗粒的结构证据。每个接合区域可至少部分地渗透到所述第一杆和所述第二传导元件之中。
在特定实施例中，每个接合区域可包含杂质，所述杂质显示第一层、第二层、第三层电性传导纳米粒子的结构证据。所述第二层电性传导纳米粒子可被设置在所述第一层电性传导纳米粒子和所述第三层电性传导纳米粒子之间并且可包含至少一种材料，其不同于所述第一层电性传导纳米粒子包含的至少一种材料并且不同于所述第三层电性传导纳米粒子包含的至少一种材料。在一范例中，每个接合区域可包含杂质，所述杂质显示第一层、第二层、第三层、第四层、第五层电性传导纳米粒子的结构证据。所述第一层电性传导纳米粒子和所述第五层电性传导纳米粒子可至少部分地分别渗透到所述第一杆和所述第二传导元件之中。
所述第二层电性传导纳米粒子和所述第四层电性传导纳米粒子可各自包含至少一种材料，其分别不同于所述第一层电性传导纳米粒子和所述第五层电性传导纳米粒子包含的至少一种材料。所述第二层电性传导纳米粒子和所述第四层电性传导纳米粒子中的每一个可包含阻障金属，所述阻障金属经配置以避免所述第三层电性传导纳米粒子的金属渗透到所述第一层电性传导纳米粒子和所述第五层电性传导纳米粒子之中。在一范例性实施例中，每个接合区域可包含焊料，所述焊料延伸到位在至少一些所述电性传导纳米粒子之间的微通孔之中，每个微通孔具有小于0.5微米的最大宽度。
在特定的范例中，所述第一构件的所述基板的所述第一表面以及所述第二构件的所述基板的所述主要表面可各自包含介电材料，并且所述第一表面的所述介电材料可直接地与所述主要表面的所述介电材料接合。在一实施例中，所述第一构件和所述第二构件的所述基板中的至少一个可以具有金属元件，所述金属元件在各别的基板中的在第一和第二横向方向上的各自的平面中延伸。所述金属元件可经配置以提供电磁屏蔽来减少传输于所述第一传导元件和所述第二传导元件之间的讯号的杂讯。
在特定实施例中，所述第一构件和所述第二构件的所述基板中的两者具有所述金属元件，所述金属元件在各别的基板中以第一和第二横向方向于各自的平面中延伸。所述第一构件的所述金属元件可包含延伸在所述第一方向上的迹线，并且所述第二构件的所述金属元件可包含延伸在所述第二方向上的迹线。在一范例中，所述金属元件可以是连续的金属片，所述连续的金属片具有在所述第一和第二方向上与所述第一传导元件和所述第二传导元件对准而延伸穿过所述连续的金属片的开口。在一范例性实施例中，所述第一构件或第二构件中之至少一者可以是包含主动半导体装置的微电子元件。
在一实施例中，一种系统可包含如上文中所述的组件以及连接到所述组件的一个或多个其他电子构件。在特定的范例中，所述系统也可以包含壳体，所述组件和其它电子构件是被安装在所述壳体。本发明的其他态样可提供系统，所述系统合并了根据本发明前述态样的组件、根据本发明前述态样的复合晶片或是其上有其他电子组件电连接的两者。举例来说，所述系统可被设置在单一壳体中及/或安装在单一壳体，所述单一壳体可以是携带型壳体。根据本发明的此态样中的较佳实施例的系统可以比现有系统更为紧凑。
附图说明
图1是根据本发明的一实施例的组件的概略侧面截面图。
图2A至2F是根据描绘于图1的实施例的制造步骤说明的侧面截面图。
图3根据显示于图1中的组件的另一实施例的概略侧面截面图。
图4A至4C是根据描绘于图3的实施例的制造步骤说明的侧面截面图。
图5是根据显示于图1中的组件的另一实施例的概略侧面截面图。
图6A至6D是根据描绘于图5的实施例的制造步骤说明的侧面截面图。
图7是根据显示于图5中的组件的另一实施例的概略侧面截面图。
图8A和8B是根据描绘于图7的实施例的制造步骤说明的侧面截面图。
图9是根据本发明的一实施例的组件的概略侧面截面图。
图10A至10C是根据描绘于图9的实施例的制造步骤说明的侧面截面图。
图11是根据本发明的一实施例的组件的概略侧面截面图。
图12A和12B是根据描绘于图11的实施例的制造步骤说明的侧面截面图。
图13是根据显示于图11中的组件的另一实施例的概略侧面截面图。
图14A和14B是根据描绘于图13的实施例的制造步骤说明的侧面截面图。
图15是根据本发明的一实施例的组件的概略侧面截面图。
图16是根据显示于图15中的组件的另一实施例的概略侧面截面图。
图17是根据本发明的一实施例的系统的示意图。
具体实施方式
如在本公开中参考基板所使用的，有一叙述为电性传导元件“在”基板的表面处，当基板未与任何其他元件组装时，所述电性传导元件可用于以垂直于基板表面的方向上从基板外面向基板表面移动而与理论点接触。因此，位于基板的表面处的终端或其他传导元件可从该表面突出；可能与此表面齐平；或者可以相对于该表面下凹于所述基板中的孔或凹陷中。在一些实施例中，传导元件可以附接到表面上或者可以设置在所述表面上的一层或多层介电涂层中。
如图1中所示，组件100可包含第一基板110，其具有在第一方向D1和横向于所述第一方向的第二方向上延伸的主要表面112；第二基板120，其具有在所述第一和第二方向上延伸的主要表面122；以及传导柱130，其在横向于所述第一和第二方向的第三方向D3上延伸，所述柱提供分别在主要表面112和主要表面122处的传导元件131和133之间的电性连接。虽然在图1中只有显示与描述单一柱130，应可以理解的是所述第一和第二基板110、120可借由m×n阵列的传导柱而被结合，n和m中的两者或是一者是大于1。柱130(以及描述于下文中的其他传导柱)可例如被用于携载在所述第一基板110和所述第二基板120之间的讯号或是资讯、功率、热或是参考电位。
在图1中，平行于主要表面112和主要表面122的所述第一和第二方向在本文中被称为“水平”或“侧向”方向，而垂直于所述主要表面的这些方向，例如所述第三方向D3，则在本文中被称为向上或向下方向并且在本文中也可以被称为“垂直”方向。参照本文的该些方向是在所参考的结构的框架之中。因此，这些方向可以位于参考的正常或重力框架中的任何指向。有一叙述为一个特征是被设置成与另一特征相比在“超过一表面”的一较高高度处，这是指所述一个特征在离开该表面的相同的正交方向上比另一个特征有更远的距离。相反地，一叙述为一个特征是被设置成与另一特征相比在“超过一表面”的一较矮高度处，这是指所述一个特征在离开该表面的相同的正交方向上比另一个特征相对于该表面有较短的距离。
在某些实施例中，该些基板110和120中的一个或两个(或是关于本说明书中所揭示的任何实施例中的所述基板)可以是半导体晶片、晶圆、玻璃、陶瓷、玻璃-陶瓷、聚合物、复合材料、基板、微电子封装、平面面板或是相似物以及前述材料之组合物。该些基板110和120中的一个或两个可以基本上由例如硅的无机材料、或基板或制程中的微电子封装所组成。该些基板110和120中的一个或两个在它的主要表面和相对于所述主要表面的各自第二表面114或124之间的厚度可以小于500μm，并且可以明显地更小，例如是130μm、70μm或是甚至更小。该些基板110和120中的一个或两个可以是一中介物，所述中介物提供主要表面和其第二表面之间的电性互连，及/或该些基板110和120中的一个或两个可以是微电子封装，其具有主动半导体装置于其中并且具有终端在其之所述第二表面处经配置以与所述微电子封装之外的构件结合。
该些基板110和120中的一个或两个(或是关于本说明书中所揭示的任何实施例中的所述基板)可以在所述基板的平面中具有小于10ppm/℃(百万分之一/度C)的热膨胀系数(coefficient of thermal expansion，CTE)。在特定实施例中，该些基板110和120中的一个或两个可具有小于7ppm/℃的CTE。在其它实施例中，该些基板110和120中的一个或两个的所述CTE可以是小于20ppm/℃。在一范例中，该些基板110和120中的一个或两个的所述CTE可以是大于22ppm/℃。
在某些实施例中，该些基板110和120中的一个或两个(或是关于本说明书中所揭示的任何实施例中的所述基板)可以由一材料所制成，例如半导体材料、陶瓷、玻璃、液晶材料、像是玻璃-环氧树脂或纤维增强复合物的复合材料、层压结构或是前述材料的组合物。在某些实施例中，该些基板110和120中的一个或两个可以是支撑介电质元件，例如用于卷带式自动接合(tape automatedbonding，TAB)中的卷带。在一范例中，该些基板110和120中的一个或两个可以基本上由介电质元件所制成，所述介电质元件在所述基板的平面中具有小于10ppm/℃的热膨胀系数。在特定实施例中，所述基板102可以基本上由介电质元件所制成，所述介电质元件在所述基板的平面中具有在约10到约20ppm/℃之间的热膨胀系数。在一特定实施例中，该些基板110和120中的一个或两个可以基本上由介电质元件所制成，所述介电质元件具有在所述基板的平面中在约10到约20ppm/℃之间的热膨胀系数并且具有在约15到约60ppm/℃之间的平面外(out-of-plane)的热膨胀系数。在一范例中，该些基板110和120中的一个或两个可以具有小于4GPa的杨氏模数(Young’s modulus)。在一范例性实施例中，该些基板110和120中的一个或两个可以具有小于100GPa的杨氏模数。
该些基板110和120中的一个或两个(或是关于本说明书中所揭示的任何实施例中的所述基板)可进一步包含绝缘介电层(未显示)，其覆盖在个别的主要表面112或122及/或个别的第二表面114或124。当所述基板包含电性传导材料或是半导体材料时，此介电层可电性绝缘传导元件(例如柱130)与所述基板。这些介电层可被称为所述基板的“钝化层”。此介电层可包含无机或有机介电材料或是两者。此介电层可包含电沉积的保形涂层或是其他介电材料，例如显像(photoimageable)聚合物材料，例如焊料遮罩材料。
该些基板110和120中的一个或两个(或是关于本说明书中所揭示的任何实施例中的所述基板)可进一步包含传导结构116或126于其中。此传导结构可包含沿着所述主要表面和第二表面中的一或两者所延伸的迹线、延伸于各自的主要表面112或122及/或各自的第二表面114或124之间或者是延伸在各自的主要表面112或122及/或各自的第二表面114或124之间的一方向上的传导互连或传导通孔、以及在各自的第二表面处用于电连接构件外部到组件100的终端118或128。
在实施例中，其中该些基板110和120中的一个或两个包含半导体基板，例如由硅所制成，一个或多个半导体装置(例如电晶体、二极体等等)可被设置在其之主动装置区域中，所述主动装置区域位在各自主动表面112或122处及/或位在各自主动表面112或122之下。
传导柱130可包含第一电性传导元件或第一部分132以及第二电性传导元件或第二部分134。第一部分132可以在第一基板110的主要表面112处被电性地连接至并且与一个或多个传导元件131结合，并且第二部分134可以在第二基板120的主要表面122处被电性地连接至并且与一个或多个传导元件133结合。所述第一和第二部分132、134的每一个可以是一金属柱，其在所述第三方向上或是在相对于所述第三方向的一方向上从个别的主要表面112、122延伸，该些金属柱包含实质上刚性的元件，例如垂直延伸的金属部分。在一实施例中，在平行于主要表面112(例如，方向D1)的水平方向上的第一部分132的宽度可以小于对应的传导元件131的宽度。相似地，在特定的范例中，在平行于主要表面122(例如，方向D1)的水平方向上的第二部分134的宽度可以小于对应的传导元件133的宽度。
所述第一和第二部分132、134可各自包含一种传导材料，例如铜、铝、钨、焊料、金、镍、锡、铅、镓、铟、银、包括铜的合金、包含镍的合金、包含钨的合金或包含前述材料中的一种或多种的组合等等。在一范例中，所述第一和第二部分132、134中的每一个可实质上由铜所组成。所述第一和第二部分132、134可各自包含相同的材料或是第一部分可包含与第二部分不相同的材料。
传导柱130也可以包含在第一基板110的主要表面112处的第一传导元件131及/或在第二基板112的主要表面122处的第二传导元件133。则传导元件131及/或133可以是薄的、金属的平垫，例如铜、铝、镍或其他适合的材料。在某些实施例中，传导元件131及/或133可以是实质上厚的，并且垂直于主要表面112、122的垂直方向D3上的传导元件的组合高度可以高达传导柱130的高度的30％。在特定的范例中，在垂直方向D3上的传导元件的组合高度可以高达传导柱130的高度的70％。传导元件131或133可包含与所述第一和第二部分132、134中的一个或两个相同的材料，或是其可包含一材料，该材料是不同于所述第一和第二部分中的一个或两个的材料。在某些实施例中，所述第一传导元件131和所述第二传导元件133中的一个或两者可包含阻障层或阻障材料。在一范例中，所述第一传导元件131和所述第二传导元件133中的一个或两者可以与所述第一和第二部分132、134中的一个或两个整体地形成。
传导柱130可包含接合区域136，其可包含已经在先前的接合操作中被接合在一起的纳米粒子的结构证据。在本文中所使用的，所述用语"纳米粒子"包含任何形式的纳米材料，包含例如具有长度尺寸通常小于约100纳米的纳米粒子团、悬浮于液体中的纳米粒子或是悬浮于具有表面活性剂的膏状物中的纳米粒子。所述接合区域可以或是可以不包含任何残留的液体，例如表面活性剂或是溶剂。所述纳米粒子的实际尺寸可以明显更小，例如具有约1纳米和更大的尺寸。在一范例中，接合区域136可以至少部分地渗透到每个所述第一和第二部分132、134之中。纳米粒子也可以被布置成在金属杆的一个或多个表面处的树枝状沉积物，所述金属杆可包含传导柱130的所述第一和第二部分132、134。
在一范例中，接合区域136可包含纳米粒子层，其基本上由铜、金、镍、银、包括银的合金、镓、铟、包括镓或铟的合金、锡、铋、共晶金属合金、另一种金属或金属的组合中之至少一种材料所制成。所述纳米粒子可被涂覆有非常薄的保护或非保护层的材料(例如镓、铟、锡、镍、铜、金)，并且所述保护层可以是连续或是不连续的。保护或非保护层的材料可以低于所述纳米粒子的熔点。在一范例中，被沉积到所述第一部分132的纳米粒子可以被涂覆有镓，并且被沉积到所述第二部分134的纳米粒子可以被涂覆有铟，其可低于所述纳米粒子的熔点。保护或非保护层的材料可以例如具有5-10纳米的厚度。关于纳米粒子上的保护或非保护层的材料进一步细节可在美国专利第9,024,205号中找到，所述美国专利案以参考的方式而被全文并入本文中。
纳米粒子可以经历熔点下降，其中纳米级材料可以在比块状材料低得多的温度下熔化。在一范例中，纳米粒子的熔点可以比由纳米粒子所组成的相同材料的块状区域的熔点低几百度C。当金属具有粒子直径小于50nm时，金属纳米粒子的熔点下降最为显著。具有基本上由纳米粒子所组成的接合区域136可以允许所述接合区域具有在室温或者是在室温之上的几百度C之内的熔点。
与现有的结合技术相比，在较低的温度下(例如低于200℃)将第一和第二基板110、120(以及本文中所述的其他第一基板310/510/710及第二基板320/520/720)连接在一起能够改善最终组件100的结构，并且可以有利于制作所述组件的制程，其可改善良率与效率，从而减少制造成本。通常，每个基板110、120的第一和第二部分132、134(例如以电性传导杆的形式)是在刚好低于所述结合温度的一温度下以对准彼此的方式并置在一起。接着，所述经对准的杆被移动以彼此接触，并且所述组件是被加热到所述结合温度，在此时，在各别第一和第二部分132、134上的所述纳米粒子接合，使得所述柱130形成。在某些实施例中，当所述配对区域接触时，在所述基板之间的所述纳米粒子区域可熔于室温。后续较高温的处理可用来改善所述室温结合的机械和电性的完整性。所述基板结合的周围环境可以是惰性的、还原的(reducing)或真空的。在某些应用中，在结合操作期间，金属氧化物还原流体可以在所述基板周围流动。在一实施例中，在所述结合腔室中的所述流体可包含化合物，其提高金属中的晶粒生长或晶粒生长速度，例如分散在氮等惰性气体中的醇。
与在大约250℃的温度下的现有焊料结合制程相反的，基板110与120(它们可以具有实质上不同的热膨胀系数)的降低温度的纳米粒子结合可导致最终组合的产品(例如组件100)的应变和翘曲显著更小。减少的基板翘曲在随后的组装制程中可以是有益的。这是因为结构结合的温度与组件储存或操作的温度之间的差异比现有制程小得多。以这种方式，组装的结构(例如，组件100)由于组装过程而具有较小的翘曲倾向。
再者，在较低的结合温度下形成的每个柱130的各个部分132、134之间的连接不需要像传统结构那样强壮，因为在较低温度下进行组装制程可以由于在连接温度和产品使用或储存的温度之间较小的温度差而对每个连接施加较小的应力。使用较低热预算制程进行组装的组装封装可以在较低的温度下使封装硬化。所述较坚硬的封装可以减少翘曲。而且，降低结合温度可以使得更容易将较大的基板对准并结合在一起，从而提高效率。描述于上文中的所有益处可应用到描述于本文中的所有实施例的组件100/300/500/700/900/1100/1300/1500/1600。
借由以各种形式的纳米粒子或纳米材料将所述第一和第二部分132、134结合在一起之后，将所述第一部分和第二部分结合在一起的接合区域136可显示纳米粒子被用于结合所述第一和第二部分之结构证据。举例来说，在所述第一和第二部分132、134的结合过程中，纳米粒子可扩散到所述第一和第二部分之中。在结合之后，先前包含纳米粒子的金属不再处于具有通常小于约100纳米的长度尺寸的纳米粒子团的形式。
将所述第一和第二部分132、134结合在一起的所述接合区域136可显示纳米粒子被用来结合所述第一和第二部分的其他结构证据，包含所述接合区域的表面的轮廓。如图1中所示，接合区域136可具有齿痕状或锯齿状的表面137，其通常在相关于所述柱130的圆周方向上延伸。接合区域136的所述表面137相较于所述第一和第二部分132、134的表面粗糙度可具有较高程度的表面粗糙度。举例来说，所述表面137可具有大于30纳米的表面粗糙度。在一范例中，所述表面137可具有大于3.0纳米的表面粗糙度。
纳米粒子被用来结合所述第一和第二部分132、134的结构证据的另外范例可以是在所述接合区域136之中存在微通孔。举例来说，接合区域136可包含多个微通孔，该些多个微通孔中的每个都小于0.5微米，或是所述接合区域可包含微通孔，该些微通孔中的每个都小于0.2微米。此微通孔可例如由空气或介电材料所填充。在一实施例中，在所述接合区域之中的每个通孔的横截面可以小于接合区域的横截面的10％。在特定的范例中，在所述接合区域之中的每个通孔的横截面可以小于所述接合区域的横截面的5％或是小于1％。在一实施例中，在所述接合区域的一给定横截面之中的该些通孔的横截面总面积可以小于所述接合区域的横截面的10％。在特定的范例中，在所述接合区域的一给定横截面之中的该些通孔的横截面总面积可以小于所述接合区域的横截面的5％或是小于1％。
在实施例中，所述第一和第二基板110、120是借由传导柱130阵列而结合，在第三方向D3上的传导柱的阵列之中的接合区域136的厚度T变化高达3微米，或是例如在0.5微米到3微米之间。在传导柱130之中的接合区域136的厚度T变化可能是由于，在该些对应的第一和第二部分被彼此结合在一起之前，第一部分132阵列的该些顶表面之中的不平坦及/或对应的第二部分134阵列的该些顶表面之中的不平坦所造成，其将描述于下文之中。在一实施例中，所述第一和第二部分132、134中的一者可以是电性传导迹线或电性传导衬垫(例如，圆形、椭圆形、正方形或长方形的平坦金属片)。因此，纳米材料可被用来附接传导杆到在主要表面112或122处的传导迹线或传导垫。
下文将参照图2A到2F描述一种制造组件100(图1)的方法。参照图2A，如果所述基板包含电性传导材料或半导体材料，则连续金属种子层140(例如，铜)可被沉积到第一基板110的主要表面112上或是沉积到覆盖于所述主要表面的介电层上。种子层140可借由各种方法被沉积，其包含原子层沉积(ALD)、物理气相沉积(PVD)或是无电电镀或电解沉积法或前述方法的组合。所述种子层可例如包含铜。所述种子层也可以包含黏着层、阻障层或者是两者。
在所述种子层140被沉积到主要表面112之后，例如是光阻层142的显像层可被沉积并且图案化以仅覆盖主要表面112的部分。光阻层142可具有开口144在沿着主要表面112的多个位置处，在该些位置处希望形成柱130。
接着，如图2B所示，可借由沉积一或多种传导材料(例如，铜)到开口144之中与种子层140接触而形成柱130的第一部分132。在此实施例中，所述第一部分132是借由电解沉积而被沉积。第一部分132可在第三方向D3上从所述种子层140延伸。
接着，如图2C中所示，第一部分132可被部分地蚀刻，以界定所述第一部分的顶表面146面向所述第三方向D3，所述第一部分具有圆形的外围边缘148。此部分的或是和缓的蚀刻步骤可曝露高指数的金属平面以允许所述纳米粒子成核(nucleate)。第一部分132可以是单一的实质上刚性的金属杆，并且顶表面146可突出超过所述主要表面112一高度H，使得所述顶表面是远离所述主要表面。第一部分132可界定以大角度(substantial angle)从所述顶表面146向外延伸的边缘表面或侧壁154。
而如图2D中所示，纳米粒子150被沉积在第一部分132的顶表面146上。在此实施例中，纳米粒子150借由电解沉积而被沉积，其中所述第一部分132是以大于50mA/cm2的电流密度而被曝露于电解槽中，如此以在所述电镀过程中造成金属离子的局部消耗于顶表面146处。
在一实施例中，在电镀第一部分132于种子层140上之后，所述电镀电流密度或电压可被增加而瞬间地超过电镀槽配方的质量传输限制。高电流脉冲电镀可被使用来形成纳米粒子150。所述电镀条件可被选择以产生一层或一区域的纳米粒子150而没有并入不期望的杂质于所述层或区域之中。
举例来说，对于电镀第一部分132到种子层140上，可使用含有有机添加剂、抑制剂、增亮剂、均化剂或前述材料的各种组合的铜电镀槽且电流密度为10到40mA/cm2之间。较佳地，可在低于所述槽配方的质量传输限制的电流密度之下执行电镀维持一足够的时间以允许所述第一部分被电镀到如图2C中所示的高度H。
为了要开始所述纳米粒子150沉积到所述顶表面146上，所述电镀电流密度则可瞬间地增加超过所述电镀槽的质量传输限制。所述纳米粒子150可借由循环所述电镀电流密度超过及低于所述电镀槽化学的质量传输限制而被沉积到顶表面146上。在一范例中，沉积所述纳米粒子150于所述顶表面146上的制程可包含以超过所述质量传输限制持续电镀3到15毫秒以及以低于所述电镀槽的质量传输限制持续电镀20到50毫秒。
用于沉积所述纳米粒子150到第一部分132的顶表面146上的电解沉积槽可以相同或不同于将第一部分132的金属沉积到种子层140上的电解沉积槽。
在另外的实施例中，第一部分132可使用额外的金属电镀槽而被电镀到种子层140，而所述纳米粒子150可借由不含有机添加物的金属电镀槽而被电镀到所述第一部分的顶表面146上。在某些范例中，金属晶粒精制剂(metal grain refiners)可以包含在电镀槽中，提供所述晶粒精制剂不会在纳米粒子150的电镀层或区域中引入大量的不希望的杂质。
在某些实施例中，包含第一部分132的所述金属可以不同于包含纳米粒子150的金属。举例来说，第一部分132可包含使用铜、金或镍电镀槽所沉积的金属或合金，且纳米粒子150可包含较低熔点材料，例如镓、铟、锡及/或其之各自的合金。
在另外的实施例中，被沉积到所述第一和第二部分132、134的相对顶表面146和146’上的纳米粒子150可包含相同或是不同的金属。举例来说，含有锡或锡合金的纳米粒子150可被沉积或涂覆到第一部分132的顶表面146上，而含有铟、镓或是它们的各自合金的纳米粒子150可被沉积或涂覆到第二部分134的顶表面146’上。
在特定实施例中，在使用电解制程将第一部分132沉积到种子层140上之后，举例来说，第一基板110可被清洗并且传递到一无电电镀槽以沉积纳米粒子150到所述第一部分的顶表面146上。举例来说，在所述纳米粒子150的无电电镀过程中，所述纳米粒子的一初始沉积层或区域可以是平滑且无颗粒的，但是所述无电电镀的所述金属还原阶段可能被催化性地增加以开始将非平坦的纳米粒子层或区域沉积到所述初始沉积层或区域。所述非平面沉积的纳米粒子150可被持续一足够的时间以沉积所期望的纳米粒子的总厚度。
在某些应用中，所述无电电镀槽可被部分地分解以产生有益的金属的纳米粒子150。所产生的纳米粒子150可选择性地覆盖且黏着到第一部分132的顶表面146。不需要的颗粒可以被催化地或氧化地溶解在另一个溢出的处理腔室中，并且该槽可以被再循环以沉积更多的纳米粒子。
接着，如图2E中所示，光阻层142可被移除并且接着介电质保护遮罩152(例如，光阻层)可被选择性地设置在所述纳米粒子150以及第一部分132的侧壁154的至少一部分之上，以在种子层140的部分的移除期间保护所述纳米粒子以及所述第一部分。所述保护遮罩152也可以在种子层140的部分上延伸，所述种子层140的部分是期望具有沿着第一基板110的所述主要表面延伸的传导迹线。在某些实施例中，所述保护遮罩152可能不需要。举例来说，在一实施例中，所述纳米粒子150包含一材料，所述材料是不同于种子层140的材料，所述沉积的纳米粒子层可在所述种子层的移除过程中被用来作为所述第一部分132的保护遮罩。
接着，种子层140可在沿着所述第一基板110的所述主要表面112的多个位置处被移除，在该些位置处是不希望具有传导材料(例如在相邻的第一部分132之间)。在所述种子层140的多余部份被移除之后，所述保护遮罩152可被移除。在某些实施例中，种子层140的没有被移除的该些部份可形成延伸于所述主要表面112和122之间的传导柱130的部分。
接着，如图2F中所示，从所述第一基板110的所述主要表面112延伸的第一部分132可以与从所述第二基板120的所述主要表面122延伸的第二部分134结合。所述第二部分134可使用与如图2A到2E中所述以及所显示的相同方法步骤来形成，其包含施加所述纳米粒子150于其上或者是所述纳米粒子可只有被施加到所述第一和第二部分132、134中的一者而没有施加到另一部分。
为了将第一部分132和第二部分134彼此结合，至少所述组件100的并置的第一和第二部分的界面可被加热到一温度，所述温度接近于所述结合或烧结温度。接着，所述第一部分132和所述第二部分134被彼此并置并且所述第一和第二部分可在第一和第二侧向方向上被彼此对准。
接着，所述第一部分132和所述第二部分134可以互相接触，使得被施加到各自的第一和第二部分的表面146、146’中的一个或两个的纳米粒子150可接着被结合在一起以形成在第三方向D3上具有厚度T例如为高达3微米、或是在0.02微米到3微米之间、或在0.05微米到3微米之间的一层。因此，纳米粒子150可补偿在各别的第一和第二部分132、134的相对的对应表面146、146’之间的间隙或不平整。在一范例中，第一部分132的所述表面146可至少部分地面对第二部分134的所述表面146’、至少一些第一部分的表面相对于彼此不共平面及/或至少一些第二部分的表面相对于彼此不共平面。
在所述相对的对应的顶表面146、146’之间的间隙可能是由于多个或阵列式的第一部分132的该些顶表面中的不平坦及/或多个或阵列式的第二部分134的该些顶表面中的不平坦所造成。在一范例中，在此并置步骤的过程中，由于第一部分132和第二部分134的顶表面之间的不平坦，纳米粒子150的层可以在不同的并置的第一部分132和第二部分134之间被不同的距离挤压。在此范例中，所造成的接合区域136的厚度可变化高达3微米，如此以迁就第一部分132和第二部分134中的至少一些的顶表面146、146’的非共平面性。
接着，至少所述并置的第一和第二部分132、134的界面可在相对低压之下被加热至一结合温度或是烧结温度，其较佳是低于200℃，更佳地是低于180°C或是也较佳地是低于150℃。在并置的第一部分132和第二部分134的结合过程中，在更高的温度下进行进一步的热处理之前，初始结合温度可以低于100℃。在所述结合温度和充分的压力之下，纳米粒子150可扩散到第一部分132和第二部分134两者之中，从而形成冶金结合并且将所述第一和第二部分结合在一起成为传导柱130，如图1中所示。
尽管本文描述的结合方法使得第一部分132和第二部分134的顶表面146、146彼此结合，但不一定如此。在某些范例中，第一部分132和第二部分134的边缘表面或侧壁154可彼此结合，或是所述第一和第二部分中的一个的边缘表面可以与所述第一和第二部分中的另一个的顶表面结合。此外，虽然所述结合的顶表面146、146’或边缘表面154被显示为平面，但不一定如此。要被连接的第一和第二部分132、134中的一个或两个的顶表面146、146’或边缘表面154中的任何一个或全部可以是平面的或非平面的(例如，凸面、凹面、非线性、成角度的、多面的等等)。
在一范例中，所述第一和第二部分132、134中的一个或两个可被形成在位在主要表面112及/或122处的电性传导迹线或电性传导衬垫上。在特定实施例中，所述第一和第二基板110、120中的一个或两个其中可包含主动及/或被动装置(例如，电容器、电阻器等等)。在某些实施例中，机械或光学元件(例如，光学盖)可被设置在所述第一和第二基板110、120中的一个或两个之上。所述经形成的传导柱130可被用来执行电性功能(例如，携载讯号或是参考电位)、机械性功能(例如，吸收在所述第一和第二基板之间的机械性应力)及/或热相关功能(例如，传热目的)。
图3显示组件300，所述组件300是描述且显示于图1中的组件100的变型。组件300是相同于上文中所描述的组件100，除了传导柱330具有一个或多个齿痕状或锯齿状的侧壁表面337遍及所述柱的高度，其显示纳米粒子沉积于其上的结构证据，而不是具有齿痕状或锯齿状的侧壁表面仅位在接合区域336中或邻近合区域336。并且，下文的描述将参照图4B和4C，纳米粒子350借由无电电镀或电解沉积而被沉积在所述第一和第二部分332、334上。
在图3到图4C中所显示的实施例中，纳米粒子350是沿着所述第一和第二部分332、334的部分或是整个侧壁354而被沉积。再者，被形成在接合区域336处以及在侧壁354处的锯齿状的表面337可具有一表面粗糙度，其大于5纳米。
一种制造所述组件300(图3)的方法将参照图4A-4C而被描述。制造组件300的所述方法可以借由与以上参照图2A-2C描述的方法步骤相同的方式开始。接着，如图4A所示，在形成第一部分332之后，光阻层142(图2C)可以被移除。
然后，种子层340可以在沿着第一基板310的主要表面312的不希望具有电性传导材料(例如，在相邻的第一部分332之间)的位置处被移除。种子层340的未被移除的部分可以形成在主要表面312和322之间延伸的传导柱330的一部分。
接下来，如图4B所示，纳米粒子350沉积在第一部分332的顶表面346和侧壁354上。在一范例中，纳米粒子350可以完全或基本上完全覆盖第一部分332的顶表面346和边缘表面或侧壁354。在该实施例中，第一部分332可以是单一实质上刚性的金属杆或传导垫或传导迹线，并且顶表面346可以突出超过主要表面312一高度H(图4A)，使得所述顶表面从所述主要表面远离。第一部分332可以界定以大角度从顶表面346向外延伸的边缘表面或侧壁354。
在此实施例中，沉积纳米粒子350是借由无电电镀或电解沉积，其中所述第一部分332是曝露于无电电镀或无电电镀槽中以沉积纳米粒子350。用于沉积纳米粒子350于第一部分332的顶表面346和侧壁354上的所述无电沉积槽可以相同或是不同于用以沉积第一部分332的金属于种子层340上的沉积槽。
接着，如图4C中所示，从第一基板310的主要表面312延伸的第一部分332可以与从第二基板320的主要表面322延伸的第二部分334结合。第二部分334可以使用参照图4A和图4B所示和所描述的相同的方法步骤而被形成，包括在第二部分334上施加纳米粒子350，或者是所述纳米粒子可以仅施加到第一部分332和第二部分334中的一个而不施加到另一部分。
为了将第一部分332和第二部分334彼此结合，至少将组件300的并置的第一部分和第二部分的界面加热到接近结合温度或烧结温度的一温度。然后，第一部分332和第二部分334彼此并置，并且所述第一和第二部分可以在第一和第二侧向方向上彼此对齐。
接下来，可以使第一部分332和第二部分334彼此接触，使得施加到个别的第一和第二部分的顶表面346、346’中的一个或两个上的纳米粒子350接着可以接合一起以在第三方向D3上形成具有厚度T高达3微米、或者在0.02微米到3微米之间、或者在0.05到3微米之间的层。因此，纳米粒子350可以补偿个别的第一部分332和第二部分334的面对的相应顶表面346、346’之间的间隙。
然后，至少并置的第一部分332和第二部分334的界面可以在相对低的压力下被加热到结合温度或烧结温度，所述接合或烧结温度较佳地是低于200℃，更佳地是低于180℃，或还更佳地是低于150℃。在并置的第一部分332和第二部分334的结合过程中，在更高的温度下进行进一步的热处理之前，初始结合温度可以低于100℃。在结合温度和足够的压力下，纳米粒子350可以扩散到第一部分332和第二部分334两者中，从而形成冶金结合并且将所述第一和第二部分连接在一起成为传导柱330，如图3中所示。
在参照上面关于图4A和图4B所描述的制程中的一部分的变型中，在形成第一部分332之后，光阻层142(图2C)可以保持在原位而不是被去除。在这样的实施例中，第一部分332或光阻层142的部分可被略微蚀刻或去除以在第一部分的侧壁354与光阻层之间形成小间隙(例如，如图6A中所示的间隙G)。在间隙形成步骤之后，可以借由之前描述的无电电镀或电解方法将纳米粒子350沉积到第一部分332的顶表面346和侧壁354上。在沉积纳米粒子350之后，可以在纳米粒子上方沉积遮罩(例如，诸如光阻层的遮罩)，并且可以去除光阻层142和种子层340的部分，从而产生图4B中所示的结构。
在具有沉积到第一部分332和第二部分334的顶表面346、346’以及边缘表面或侧壁354上的纳米粒子350的该实施例中，可以更容易地将所述第一部分和第二部分的边缘表面彼此结合，或将第一部分和第二部分中的一个的边缘表面与第一部分和第二部分中的另一个的顶表面结合。因此，具有沉积到第一部分332和第二部分334的顶表面346、346’边缘表面或侧壁354上的纳米粒子350可以允许相应的第一部分和第二部分在结合过程中相较于没有纳米粒子沉积在第一和第二部分的侧壁上的实施例更为错位(misalign)，因为结合可以形成在第一和第二部分的边缘表面之间、或者第一和第二部分中的一个的边缘表面与第一和第二部分中的另一个的顶表面之间。
图5显示组件500，组件500是参考图1所示和描述的组件100的变型。组件500与上述组件100相同，除了在第一部分532和第二部分534的顶表面546、546’和侧壁554上方沉积黏着层和/或阻障层560，以及在沉积纳米粒子550之前，沉积接合层562和润湿层564以覆盖第一和第二部分的顶表面。例如，阻障层560可以具有小于100纳米的厚度。
在此实施例中，纳米粒子550可以包括焊料，使得第一部分532和第二部分534的接合可以在非常低的温度下(例如低于120℃)并且在相对低的压力下或者在大气压力下发生。使用焊料作为纳米粒子550可允许组件500的重工。例如，如果组件500被加热到120℃以上，则焊料可充分烧结以允许第一部分532和第二部分534彼此分离，而第一和第二部分的金属以及阻障层560和接合层562的金属可保持固态。然后可以将新纳米粒子550施加到第一部分532和第二部分534，并且可以重新结合所述第一部分和第二部分。
现在将参照图6A-6D描述制造组件500(图5)的方法。制造组件500的方法可以借由参考图2A和图2B描述于上文中的方法步骤相同的方式开始。接着，如图6A所示，第一部分532或所述遮罩或光阻层542的一部分可被部分蚀刻，以界定大致面向第三方向(图1)的顶表面546，其可具有圆形外围边缘548。
第一部分532的蚀刻也可以沿侧壁554从顶表面546进行到种子层540，其界定所述侧壁和光阻层542之间的间隙G。在一范例中，间隙G可以沿着侧壁554的高度延伸，露出间隙内的种子层540的一部分的。在另一个范例中，间隙G可以仅沿着侧壁554的高度的一部分延伸，而不向下延伸到种子层540。在又一范例中，间隙G可以沿着侧壁554的整个高度延伸并且部分地或完全穿过种子层540。在此实施例中，第一部分532可以是单一实质上刚性的金属杆或传导垫或传导迹线，并且顶表面546可以突出超过主要表面512一高度H，使得所述顶表面远离所述主要表面。第一部分532可以界定从顶表面546以大角度向外延伸的边缘表面或侧壁554。
然后，如图6B所示，阻障层560被沉积在光阻层542的开口544内，且在第一部分532的顶表面546和侧壁554上。在一范例中，阻障层560可以完全覆盖顶表面546以及第一部分532的边缘表面或侧壁554。
可适用于阻障层560的金属的实例可包括镍、钨、氮化钛、氮化钽、氮化硅钽(tantalum silicon nitride)、钽、氮化硅钨(tungsten silicon nitride)、包含镍的合金以及前述金属的组合。阻障层560可防止来自纳米粒子550(例如焊料)的金属扩散到第一部分532的金属材料(例如铜)中。
接着，参照图6C，接合层562和润湿层564可以被沉积覆盖第一部分532的顶表面546。接合层562可以沉积在阻障层560的表面上。接合层562可例如包括金。润湿层564可以沉积在接合层562上。所述润湿层可以例如包括焊料。在某些范例中，接合层562和润湿层564可以是相同的材料，或者可以包括类似的材料或类似材料的合金。
然后，将纳米粒子550沉积到润湿层564上。在此实施例中，借由电解沉积来沉积纳米粒子550，其中第一部分532以大于50mA/cm2的电流密度曝露于电解槽，如此以导致电镀槽的消耗。如上文所述，纳米粒子550可以包括焊料或者一种或多种接合金属，例如锡、铟、铋或者这些接合金属中的两种或更多种的组合。
接下来，可移除光阻层542，然后可将介电质保护遮罩选择性地沉积在第一部分532上方，以在去除部分种子层540期间保护所述纳米粒子和所述第一部分，如上文所述参考图2E。随后，种子层540可以在沿着第一基板510的主要表面512的不希望具有传导材料(例如，在相邻的第一部分532之间)的位置处被移除。在种子层540的多余部分被移除之后，可以移除保护遮罩。
然后，如图6D所示，从第一基板510的主要表面512延伸的第一部分532可以与从第二基板520的主要表面522延伸的第二部分534结合。第二部分534可以使用与参照图6A-6C所示及描述的相同的方法步骤而被形成，包括在其上施加纳米粒子550，或者可选地，所述纳米粒子可以仅施加到第一部分532和第二部分534中的一个而不施加到另一部分。
为了将第一部分532和第二部分534彼此结合，至少将组件500的并置的第一部分和第二部分的界面加热到接近结合温度或烧结温度的一温度。然后，第一部分532和第二部分534彼此并置，并且所述第一和第二部分可以在第一和第二侧向方向上彼此对齐。
接下来，可以使第一部分532和第二部分534彼此接触，使得施加到各自的第一和第二部分的顶表面546、546’中的一个或两个上的纳米粒子550可以接着结合在一起形成在第三方向D3上具有厚度T的层，例如所述厚度高达3微米、或者在0.5微米与3微米之间。因此，纳米粒子550可以补偿个别的第一部分532和第二部分534的面对的对应的顶部表面546、546’之间的间隙。
然后，至少将并置的第一部分532和第二部分534的界面在相对低的压力下加热到结合温度或烧结温度，所述结合温度或烧结温度较佳地是低于120℃。在所述结合温度和足够的压力下，纳米粒子550可以扩散到第一部分532和第二部分534两者的润湿层564中，从而由所述纳米粒子和润湿层形成接合区域536，以及形成冶金结合且将所述第一部分和第二部分结合在一起形成传导柱530，如图5中所示。在一个范例中，接合区域536可以位于第一部分532的阻障层560和对应的第二部分534的顶表面546'之间。
图7显示组件700，组件700是参考图5所示和描述的组件500的变型。除了所述接合层被省略并且在沉积纳米粒子750之前将润湿层764直接沉积到阻障层760上之外，组件700与上述组件500相同。在此实施例中，润湿层764和纳米粒子750可以各自例如包含金。
一种制造所述组件700(图7)的方法将参照图8A和8B而被描述。制造组件700的所述方法可以借由与以上参照图2A、2B、6A、6B所描述的方法步骤相同的方式开始。接着，参照图8A，沉积润湿层764覆盖第一部分732的顶表面746。润湿层564可被沉积覆盖接合层562。所述润湿层可包含例如金及/或钯。
然后，将纳米粒子750沉积在润湿层764上。在此实施例中，通过电解沉积来沉积纳米粒子750，其中第一部分732以大于50mA/cm2的电流密度曝露于电解槽，如此以导致电镀槽的消耗。如上所述，纳米粒子750可以包含金。
接下来，可以移除光阻层742，然后可以将介电质保护遮罩选择性地沉积在第一部分732上，如上所述参照图2E。随后，种子层740可以在沿着第一基板710的主要表面712的不希望具有传导材料(例如，在相邻的第一部分732之间)的位置处被移除。在种子层740的多余部分被移除之后，可以移除所述保护遮罩。
然后，如图8B所示，从第一基板710的主要表面712延伸的第一部分732可以与从第二基板720的主要表面722延伸的第二部分734结合。第二部分734可以使用参照图2A、2B、6A、6B和8A中所示及所描述的相同的方法步骤而被形成，包括在其上施加纳米粒子750，或者可替代地，纳米粒子可以仅施加到第一部分732和第二部分734中的一个而不施加到另一部分。
为了将第一部分732和第二部分734彼此结合，至少将组件700的并置的第一部分和第二部分的界面加热到接近结合温度或烧结温度的温度。然后，第一部分732和第二部分734彼此并置，并且所述第一和第二部分可以在第一和第二侧向方向上彼此对齐。
接下来，可以使第一部分732和第二部分734彼此接触，使得施加到各自的第一和第二部分的顶表面746、746’中的一个或两个上的纳米粒子750接着可以结合在一起形成在第三方向D3上具有厚度T的层，该厚度例如高达3微米，或者在0.5微米与3微米之间。因此，纳米粒子750可以补偿各自的第一部分732和第二部分734的面对的相应的顶表面746、746’之间的间隙。
然后，至少将并置的第一部分732和第二部分734的界面在相对低的压力下加热到结合温度或烧结温度，所述接合或烧结温度较佳地是低于200℃，更佳地是低于180℃，或还更佳地是低于150℃。在并置的第一部分732和第二部分734的结合过程中，在较高温度下的进一步热处理之前，初始结合温度可低于100℃。在结合温度和足够的压力下，纳米粒子750可以扩散到第一部分732和第二部分734两者的润湿层764中，从而由所述纳米粒子和所述润湿层形成结合区域736，并且形成冶金结合且将第一部分和第二部分结合在一起成为传导柱730，如图7中所示。在一范例中，结合区域736可以位于第一部分732的阻障层760和对应的第二部分734的顶表面746’之间。
尽管图1、3、5和7被显示和描述为具有第一传导部分132/332/532/732和第二传导部分134/334/534/734，每个传导部分是单一实质上刚性的金属杆，其界定顶表面和以大角度从所述顶表面向外延伸之边缘表面或侧壁，但不一定是这种情况。
在某些范例中，在上述任何实施例中，第一传导部分132/332/532/732和第二传导部分和134/334/534/734中的任一个或两个可以是薄的、薄且平坦的金属垫或者包括诸如铜、铝、金、镍或钨的材料的金属迹线，所述金属迹线的底部表面被沉积以面向各自的第一或第二基板的主要表面。举例来说，参照图1所示，第一传导部分132可以是第一传导元件131的形式，并且纳米粒子150可以直接沉积在所述第一传导元件的顶表面上，及/或第二传导部分134的形式可以是第二传导元件133，并且纳米粒子可以直接沉积在所述第二传导元件的顶表面上。具有包括不是刚性金属杆的一个或多个部分的第一传导部分和第二传导部分的多个范例可参考图9-16而被显示和描述于下文中。
在一些实施例中，第一部分132/332/532/732及/或第二部分134/334/534/734可以是共形地或非共形地沉积到在各自主要表面112/312/512/712及/或122/322/522/722下方延伸的凹槽中的传导层或区域，并且第一传导部分132/332/532/732和/或第二传导部分134/334/534/734可以填充或不填充其个别的凹槽。可以将纳米粒子150/350/550/750沉积到所沉积的层或区域的曝露表面上，并且可以将所述纳米粒子沉积到背离各自的所述主要表面的顶表面上。类似于图5至图6D所示的实施例，黏着层及/或阻障层可以被沉积在这样沉积的层或区域上，并且可以将所述纳米粒子150/350/550/750沉积在黏着层及/或阻障层上。具有沉积在凹槽中的第一及/或第二传导部分的实施例的范例在下文中参考图9-16而被显示和描述。
在第一部分132/332/532/732和第二部分134/334/534/734被沉积到延伸到个别的主要表面112/312/512/712及/或122/322/522/722下方的凹槽中之特定实施例中，所述第一部分和第二部分各自可以大约延伸至个别的主要表面的平面，并且纳米粒子150/350/550/750可以沉积到第一部分及/或第二部分的顶表面上。在这样的范例中，当第一基板110/310/510/710和第二基板120/320/520/720借由纳米粒子而结合在一起时，主要表面112/312/512/712和122/322/522/722可能彼此接触或几乎相互接触。具有第一和第二基板的主要表面彼此接触或几乎相互接触的实施例的范例在下文中参考参考图9-16而被显示和描述。
图9显示组件900，组件900是参照图1所示和描述的组件100的变型。组件900与上述组件100相同，不同之处在于，结合的传导结构930延伸到凹槽中，而不是包括两个传导杆。而且，基板910和920的介电质材料沿着所述第一表面和主要表面彼此融合，而不是间隔开。
如图9至图10C所示，组件900可以包括第一基板910、第二基板920以及传导结构930，第一基板910具有在第一方向D1上和在横向于第一方向的第二方向上延伸的主要表面912，第二基板920具有在所述第一和第二方向上延伸的主要表面922，以及传导结构930在横向于所述第一和第二方向的第三方向D3上延伸，所述结构分别包括在主要表面912处的传导元件932与主要表面912的传导元件934之间的电性连接。尽管参照图9仅显示和描述了单一结构930，可以理解的是，第一和第二基板910、920可以借由m×n个传导结构阵列结合，m和n中的一个或两个大于1。举例来说，可以使用结构930(以及本文描述的其他传导结构)来在第一基板910和第二基板920之间传送讯号或资讯、功率、热量或参考电位。
在一些实施例中，基板910和920中的一个或两个可以是半导体晶片、晶圆、玻璃、陶瓷、玻璃-陶瓷、聚合物、基板、微电子封装、复合材料、平面面板或是相似物及前述材料的组合。基板910和920中的一个或两个可以基本上由诸如硅的无机材料组成。在基板910和920中的一个或两个在其主要表面和与所述主要表面相对的个别的第二表面914或924之间的厚度可以小于500μm，并且可以明显更小，例如930μm、70μm甚至更小。
在一些实施例中，基板910和920中的一个或两个可以由诸如半导体材料、陶瓷、玻璃、液晶材料、诸如玻璃环氧树脂或纤维增强复合材料的复合材料、层压结构、或前述材料之组合而制成。在一些实施例中，基板910和920中的一个或两个可以是支撑介电元件，例如用于卷带式自动接合(“TAB”)中的卷带。在一个范例中，基板910和920中的一个或两个可以基本上由介电元件构成，所述介电元件在基板的平面内具有小于90ppm/℃的热膨胀系数。在特定实施例中，基板902可以基本上由介电元件构成，所述介电元件在基板的平面中具有约90到约20ppm/℃之间的热膨胀系数。在一个特定实施例中，基板910和920中的一个或两个可以基本上由介电元件构成，该介电元件具有在所述基板的平面中介于约90到约20ppm/℃之间的热膨胀系数并且具有约95至约60ppm/℃之间的平面外(out-of-plane)的热膨胀系数。在一个示例中，基板910和920中的一个或两个可以具有小于4GPa的杨氏模数。在示例性实施例中，基板910和920中的一个或两个可以具有小于100GPa的杨氏模数。
基板910和920中的一个或两个可以进一步包括覆盖个别的主要表面912或922和/或个别的第二表面914或924的绝缘介电层(未显示)。此介电层可以在当基板包括电性传导材料或半导体材料时电绝缘例如结构930的传导元件与所述基板。这些介电层可以被称为所述基板的“钝化层”。此介电层可包括无机或有机介电材料或两者。此介电层可以包括电沉积的保形涂层或其他介电材料，例如显像聚合物材料，例如焊料遮罩材料。
基板910和920中的一个或两个可以进一步包括传导结构于其中，诸如图1所示的传导结构116、126。此传导结构可以包括沿所述主要表面和第二表面中的一个或两个延伸的迹线、在个别的主要表面912或922及/或个别的第二表面914或924之间延伸或者在个别的主要表面912或922及/或个别的第二表面914或924之间的方向上延伸的传导互连或传导通孔、以及在个别的第二表面处的终端，像是图1中所示的终端118、128，用于电连接在组件900外部的组件。
在实施例中，基板910和920中的一个或两个包括例如由硅所制成的半导体基板，一个或多个半导体装置(例如电晶体、晶粒等等)可被设置在其之主动装置区域中，所述主动装置区域位于各自主动表面912或922处及/或位于各自主动表面912或922之下。在一范例中，基板910和920中的一个或两个的主动装置区域可以与对应的第一和第二传导元件932和934电连接。
传导结构930可以包括在第一基板910的主要表面912处的第一传导元件或部分932以及在第二基板920的主要表面922处的第二传导元件或部分934。每个第一部分932和第二部分934可以是设置于相应的凹槽902、904内的金属区域，其在相应的主要表面912或922下方在第三方向D3上或在与第三方向相反的方向上延伸。
第一部分932和第二部分934可以各自包括例如铜、铝、钨、焊料、铅、锡、镓、金、镍、铟、银、包括铜的合金、包括镍的合金、包括钨的合金、或上述材料中的一种或多种的组合等等。在一范例中，第一部分932和第二部分934中的每一个可以基本上由铜组成。第一部分932和第二部分934可以各自包括相同的金属，或者所述第一部分可以包括与所述第二部分不同的金属。在一些实施例中，第一部分932和第二部分934中的一者或两者可以包括阻障层或阻障材料。
传导结构930可以包括接合区域936，所述接合区域936可以包括纳米粒子已经在先前的接合操作中被结合在一起的结构证据。所述接合区域936可以或是可以不包含任何残留的液体，例如表面活性剂或是溶剂。在一范例中，接合区域936可以至少部分地渗透到每个所述第一和第二部分932、934之中。这些纳米粒子也可以被布置成在金属区域的一个或多个表面处的树枝状沉积物，所述金属区域可包含传导结构930的所述第一和第二部分932、934。
在一范例中，接合区域936可以包括基本上由铜、金、镍、银、包括银、镓、铟的合金、镓或铟的合金、锡、铋、共晶金属合金、其他的金属或是金属的组合。纳米粒子可以被涂覆有非常薄的保护层或非保护层的材料(例如，镓、铟、锡、镍)，并且所述保护层可以是连续的或不连续的。这种保护层或非保护层的材料可以降低纳米粒子的熔点。在一个范例中，沉积在第一部分932上的纳米粒子可以用镓涂覆，并且沉积在第二部分934上的纳米粒子可以用铟涂覆，这可以降低纳米粒子的熔点。这种保护层或非保护层的材料可以具有5-10纳米的厚度。关于纳米粒子上的这种保护性或非保护性材料层的进一步细节可以在美国专利第9,024,205号中找到，其在此通过引用将其并入本文。
与现有的结合技术相比，在较低的温度下(例如低于200℃)将第一和第二基板910、920结合在一起能够改善最终组件900的结构，并且可以有利于制作所述组件的制程，其可改善良率与效率，从而减少制造成本。通常，每个基板910、920的第一部分932和第二部分934(例如，以电性传导金属区域的形式)在刚好低于结合温度的温度下彼此对齐地并置。然后，使对齐的杆移动成彼此接触，并且将组件加热至结合温度，此时相应的第一部分932和第二部分934上的纳米粒子接合，使得结构930形成。在一些实施例中，当配对区域接触时，基板之间的纳米粒子区域可以在室温下融合。随后的较高温度处理可用于改善室温结合的机械和电性完整性。所述基板结合的周围环境可以是惰性的、还原的或真空的。在某些应用中，在结合操作期间，金属氧化物还原流体可以在所述基板周围流动。在一实施例中，在所述结合腔室中的所述流体可包含化合物，其提高金属中的晶粒生长或晶粒生长速度，例如分散在氮等惰性气体中的醇。
在第一部分932和第二部分934通过任何形式的纳米粒子或纳米材料结合在一起之后，将所述第一部分和第二部分结合在一起的接合区域936可以显示纳米粒子被用于结合所述第一部分和第二部分的结构证据。例如，在结合第一部分932和第二部分934期间，纳米粒子可以扩散到所述第一部分和第二部分中。在结合之后，先前包含纳米粒子的金属不再处于具有通常小于约100纳米的长度尺寸的纳米粒子团的形式。
将第一和第二部分932、934结合在一起的接合区域936可以显示纳米粒子被用于结合所述第一和第二部分之其他结构性证据，包括所述接合区域表面的轮廓。接合区域936可具有齿痕状或锯齿状的表面937，其通常在相关于所结构930的圆周方向上延伸。接合区域936的所述表面937相较于所述第一和第二部分的表面粗糙度可具有较高程度的表面粗糙度。举例来说，所述表面937可具有大于30纳米的表面粗糙度。在一范例中，所述表面937可具有大于3.0纳米的表面粗糙度。使用纳米粒子来结合第一部分932和第二部分934的结构证据的另一范例可以是接合区域936内存在微通孔。这种微通孔的结构证据可以与上述参照组件100所描述的叙述相同。
在实施例中，第一基板910和第二基板920借由传导结构930的阵列而结合，接合区域936在第三方向D3上的厚度T2在传导结构阵列之间变化可以高达3微米、或者例如在0.5微米到3微米之间。在传导结构930之中的接合区域936的厚度变化可能是由于，在该些对应的第一和第二部分被彼此结合在一起之前，第一部分932阵列中的该些顶表面之中的不平坦及/或对应的第二部分934阵列的该些顶表面之中的不平坦所造成，其将描述于下文之中。在一实施例中，所述第一和第二部分932、934中的一者可以是电性传导迹线或电性传导衬垫(例如，圆形、椭圆形、正方形或长方形的平坦金属片)。因此，纳米材料可被用来附接传导杆到在主要表面912或922的传导迹线或传导垫。
下文将参照图10A到10C描述一种制造组件900(图9)的方法。如图10A所示，一个或多个凹槽902可形成为沿着与第三方向D3相反的方向在主要表面912下方延伸。凹槽902可以使用在本技术领域中已知的任何其他方法来蚀刻或形成。为了控制一个或多个凹槽902的位置，可以沉积和图案化诸如光阻层的显像层，以仅覆盖主要表面912的一部分。所述光阻层可以在沿着主要表面912的位置处具有开口，此位置处是期望形成有结构930。
在形成凹槽902之后，如果所述基板包含电性传导材料或半导体，则连续金属种子层(例如，铜)可被沉积到所述凹陷中或是沉积到覆盖于所述凹陷的内表面903的介电层上。种子层可借由各种方法被沉积，其包含原子层沉积(ALD)、物理气相沉积(PVD)或是无电电镀或电解沉积法。所述种子层可例如包含铜。所述种子层也可以包含黏着层、阻障层或者是两者。
在所述种子层被形成之后，例如是光阻层的相同或不同的显像层可被沉积并且图案化以仅覆盖主要表面912的部分。所述光阻层可具有开口在沿着主要表面912的多个位置处，在该位置处希望形成结构930。
接着，如图10A所示，可借由沉积一或多种传导材料(例如，铜)到所述凹槽902之中与所述种子层接触而形成结构930的第一部分932。在此实施例中，所述第一部分932是借由电解沉积而被沉积。第一部分932可在第三方向D3上从所述种子层延伸。
接着，第一部分932可被部分地蚀刻，以界定面向所述第三方向D3的所述第一部分的顶表面946，所述第一部分具有圆形的外围边缘(相似于图2C中所显示的圆形的外围边缘148)。此部分的或是和缓的蚀刻步骤可曝露高指数的金属平面以允许所述纳米粒子成核。第一部分932可以是单一的实质上刚性的金属区域，并且顶表面946可凹陷一距离D于所述主要表面912之下。第一部分132可界定以大角度从所述顶表面946向外延伸的边缘表面或侧壁954。
接着，纳米粒子950被沉积在第一部分932的顶表面946上。在此实施例中，纳米粒子950借由电解沉积而被沉积，其中所述第一部分932是以大于50mA/cm2的电流密度而被曝露于电解槽中，如此以在所述电镀步骤中造成金属离子的局部消耗于顶表面946处。
在一实施例中，在电镀第一部分932于所述种子层上之后，所述电镀电流密度或电压可被增加而瞬间地超过电镀槽配方的质量传输限制。高电流脉冲电镀可被使用来形成纳米粒子950。所述电镀条件可被选择以产生一层或一区域的纳米粒子950而没有并入不期望的杂质于所述层或区域之中。
举例来说，对于电镀第一部分932到所述种子层上，可使用含有有机添加剂、抑制剂、增亮剂、均化剂或前述材料的各种组合的铜电镀槽且电流密度为10到40mA/cm2之间。较佳地，可在低于所述槽配方的质量传输限制的电流密度之下执行电镀维持一足够的时间以允许所述第一部分被电镀到如图10A中所示的高度。
为了要开始将所述纳米粒子950沉积到所述顶表面946上，所述电镀电流密度则可瞬间地增加超过所述电镀槽的质量传输限制。所述纳米粒子950可借由循环所述电镀电流密度超过及低于所述电镀槽化学的质量传输限制而被沉积到顶表面946上。在一范例中，沉积所述纳米粒子950于所述顶表面946上的制程可包含以超过所述质量传输限制持续电镀3到15毫秒以及以低于所述电镀槽的质量传输限制持续电镀20到50毫秒。用于将纳米粒子950沉积到第一部分932的顶表面946上的电解沉积槽可以相同或不同于用来将所述第一部分的金属沉积到所述种子层上的沉积槽。
在另外的实施例中，第一部分932可使用额外的金属电镀槽而被电镀到所述种子层上，而所述纳米粒子950可借由不含有机添加物的金属电镀槽而被电镀到所述第一部分的顶表面946上。在某些范例中，金属晶粒精制剂可以包含在电镀槽中，提供所述晶粒精制剂不会在纳米粒子950的电镀层或区域中引入大量的不希望的杂质。
在某些实施例中，包含第一部分932的所述金属可以不同于包含纳米粒子950的金属。举例来说，第一部分932可包含使用铜、金或镍电镀槽所沉积的金属或合金，且纳米粒子9150可包含较低熔点材料，例如镓、铟、锡及/或其之各自的合金。
在另外的实施例中，被沉积到第一和第二部分932、934的相对顶表面946和946’上的纳米粒子950可包含相同或是不同的金属。举例来说，含有锡或锡合金的纳米粒子950可被沉积或涂覆到第一部分932的顶表面946上，而含有铟、镓或是它们的各自合金的纳米粒子950可被沉积或涂覆到第二部分934的顶表面946’上。
在特定实施例中，在使用电解制程将第一部分932沉积到所述凹槽902中之后，举例来说，第一基板910可被清洗并且传递到一无电电镀槽以沉积纳米粒子950到所述第一部分的顶表面146上。举例来说，在所述纳米粒子950的无电电镀过程中，所述纳米粒子的一初始沉积层或区域可以是平滑且无颗粒的，但是所述无电电镀的所述金属还原阶段可能被催化性地增加以开始将非平坦的纳米粒子层或区域沉积到所述初始沉积层或区域。所述非平面沉积的纳米粒子950可被持续一足够的时间以沉积所期望的纳米粒子的总厚度。
在某些应用中，所述无电电镀槽可被部分地分解以产生有益的金属的纳米粒子950。所产生的纳米粒子950可选择性地覆盖且黏着到第一部分932的顶表面946。不需要的颗粒可以被催化地或氧化地溶解在另一个溢出的处理腔室中，并且该槽可以被再循环以沉积更多的纳米粒子。
接下来，可以移除任何剩余的光阻层，并且可以使用与上文中参照图2E所描述的方法类似的方法移除主要表面912上剩余的所述种子层。在移除种子层的部分的期间，可以使用介电质遮罩来覆盖所述种子层中期望具有沿着主要表面912延伸的传导迹线的部分。
接着，如图10B和10C所示，在第一基板910的凹槽902内延伸的第一部分932可以与在第二基板920的凹槽904内延伸的第二部分934结合。第二部分934可以使用参照形成第一部分932描述的相同方法步骤而形成在凹槽904内延伸于第二基板920的主要表面922之下，包括在其上施加纳米粒子950，或者可选地，所述纳米粒子可以仅施加到第一和第二部分932、934中的一个而没有施加到另一部分。
为了将第一部分932和第二部分934彼此结合，至少将组件900的并置的第一部分和第二部分的界面加热到接近结合温度或烧结温度的温度。然后，第一部分932和第二部分934彼此并置，并且第一和第二部分可以在第一和第二侧向方向上彼此对齐。
接下来，可以使第一部分932和第二部分934彼此接触，使得施加到个别的第一和第二部分的表面946、946’中的一个或两个上的纳米粒子950可以然后结合在一起以在第三方向D3上形成具有厚度T1的层，所述层例如高达3微米、或者在0.02微米到3微米之间、或者在0.05微米到3微米之间。因此，纳米粒子350可以补偿个别的第一部分932和第二部分934的相对应的表面946、946’之间的间隙和/或非平面性。在一范例中，第一部分932的表面946可以至少部分地面对第二部分934的表面946’，至少一些第一部分的表面相对于彼此不共平面，及/或至少一些第二部分的表面相对于彼此不共平面。第一部分932和第二部分934中的一个或两个的待结合的任何或全部的顶表面946、946’可以是平面的或非平面的(例如，凸面、凹面、非线性、成角度的、多面的等等)。
在一范例中，在该并置步骤期间，由于所述第一和第二部分的顶表面之间的非平面性，纳米粒子950的层可以在不同的并列的第一和第二部分932、934之间被不同的距离挤压。在这样的范例中，所得到的结合区域936的厚度可以变化高达3微米，以迁就第一部分932和第二部分934中的至少一些的顶表面946、946’的非共平面性。
然后，至少并置的第一部分932和第二部分934的界面可以在相对低的压力下被加热到结合温度或烧结温度，所述结合温度或烧结温度较佳低于200℃，更较佳低于180℃，或还更较佳低于150℃。在并置的第一部分932和第二部分934的结合过程中，在较高温度下的进一步热处理之前，初始结合温度可低于100℃。在接合温度和足够的压力下，纳米粒子950可以扩散到第一部分932和第二部分934两者中，从而形成冶金结合并将所述第一部分和第二部分结合在一起成为传导结构930，如图10C中所示。
在一范例中，在装置的温度升高到第一和第二部分932、934结合的温度之前，主要表面912和922可以彼此并置。主要表面912和922可以包括介电质黏着材料及/或部分固化的B阶段聚合物材料，使得在加热组件900之前或在加热组件900期间，所述主要表面彼此直接接合。在特定实施例中，第一基板910和第二基板920彼此并置，使得主要表面912、922彼此直接接合，并且使得第一部分932面对第二部分934。所述并置动作可以在初始温度下执行，所述初始温度可以是室温或相对较低的温度。在一范例中，在主要表面912、922处的介电材料可各自包括未完全固化的B阶段材料层，并且当组件900的温度升高时，B阶段材料层可完全固化从而将主要表面彼此直接接合。
然后，在主要表面912、922被彼此接合之后，组件900可被升高到更高的结合温度，使得纳米粒子950可扩散到第一部分932和第二部分934两者中，从而形成冶金结合并且将所述第一部分和第二部分结合在一起形成传导结构930。在主要表面912、922的结合期间及/或在第一部分932和第二部分934的结合过程中，组件900也可以承受增大的压力。
在主要表面912、922彼此接合并且第一部分932和第二部分934彼此接合之后，接合区域936在第三方向D3上的厚度可以从T1(图10C)减小到T2(图9)，从而使个别的第一部分932和第二部分934的面对的表面946、946’彼此接近，如图9所示。在第三方向D3上的接合区域936的厚度的减小可以由主要表面912、922之间的聚合物在主要表面接合在一起和/或完全固化在一起时的交联(cross-linking)作用所引起。
在一范例中，第一部分932和第二部分934中的一个或两个可以形成在设置在个别的凹槽902、904内的电性传导迹线或电性传导迹线的部分上。在示例性实施例中，第一部分932和第二部分934中的一个或两个可以是电性传导垫或设置在个别的主要表面912、922处的电性传导迹线的部分。在特定实施例中，第一基板910和第二基板920中的一个或两个可以包含主动装置和/或被动装置于其中(例如，电容器、电阻器等等)。在一些实施例中，机械或光学元件(例如，光学盖)可以设置在第一和第二基板910、920中的一个或两个之上。所形成的传导柱930可以用于执行电性功能(例如，携带信号或参考电位)、机械功能(例如，吸收第一和第二基板之间的机械应力)及/或热功能(例如传热目的)。
图11显示组件1100，所述组件1100是描述且显示于图9中的组件900的变型。除了传导结构1130具有第二部分1134(其是从设置在主要表面1122下方的传导元件1133延伸的金属杆)以及该组件具有直接接合到主要表面1112和1122的介电质区域1170(例如，黏着剂或底部填充物)之外，组件1100与上述组件900相同。第一基板1110可以与上述第一基板910相同。
第二部分1134可以在与第三方向D3相反的方向上在主要表面1122上方延伸，并且可以包括实质上刚性的元件，例如金属的垂直延伸部分。第二部分1134可以具有突出超过主要表面1122一高度H1(图12A)的顶表面1146'，使得所述顶表面远离所述主要表面。第二部分1134可以界定以大角度从顶表面1146向外延伸的边缘表面或侧壁1154。
在一个示例中，传导元件1133可以是包括平行于主要表面1122延伸的电性传导迹线、垂直于主要表面延伸的电性传导通孔及/或电性传导衬垫的层。在特定实施例中，基板1120可以包括第一区域1121和第二区域1123，并且传导元件1133可以在所述第一区域和第二区域之间延伸。在一个实施例中，第一区域1121可以包括半导体材料，并且第二区域1123可以包括介电质层，例如钝化层，诸如二氧化硅。第一区域1121可以在传导元件1133处或下方具有主动半导体装置。在实施例中，第一区域1121包括半导体材料，而传导元件1133可以借由在所述半导体材料之间延伸的介电层与所述半导体材料电绝缘(未示出)。如图11所示，第二部分1134的顶表面1146'不延伸到凹槽1102中。然而，在其它实施例中(例如，图13-14B)，所述第二部分的顶表面可以从所述第二基板延伸到在所述第一基板的所述主要表面下方的所述凹槽之中。
一种制造所述组件1100(图11)的方法将参照图12A和12B而被描述。第一部分1132可以借由与上述第一部分932相同的方式而形成。第二部分1134可以借由与上述第二部分134/334/534/734中的任何一个类似的方式形成。在一范例中，可以借由在沿着基板1120的主要表面1122的一个或多个位置处蚀刻来形成凹槽1104，直到传导元件1133的顶表面曝露在所述凹槽内。
接下来，可以将纳米粒子1150沉积到第一部分1132和第二部分1134上，或者可选地，纳米粒子可以仅施加到第一部分和第二部分中的一个而不施加到另一部分。例如，如图12A所示，可以将纳米粒子1150沉积到在主要表面1122上方延伸的顶表面1146’和第二部分1134的侧壁1154的部分上。在一范例中，纳米粒子1150可以完全或基本上完全覆盖顶表面1146以及第二部分1132的边缘表面或侧壁1154。纳米粒子1150也可以沉积到凹槽1102内的第一部分1132的顶表面1146上。可以使用上文所述关于沉积纳米粒子150/350/550/750/950的任何方法来沉积纳米粒子1150。
然后，如图12B所示，设置在第一基板1110的主要表面1112下方的第一部分1132可以与从第二基板1120的主要表面1122延伸的第二部分1134结合。为了将第一部分1132和第二部分1134彼此结合，至少组件1100的并置的所述第一部分和所述第二部分的界面可以被加热到接近结合或烧结温度的温度。然后，第一部分1132和第二部分1134彼此并置，并且所述第一和第二部分可以在第一和第二侧向方向上彼此对齐。
接下来，可以使第一部分1132和第二部分1134彼此接触，使得施加到个别的第一和第二部分的顶表面1146、1146’中的一个或两个上的纳米粒子1150然后可以被结合在一起而形成在第三方向D3上具有最多3微米、或者0.02微米至3微米、或者0.05至3微米的厚度T1的层。因此，纳米粒子1150可以补偿个别的第一部分1132和第二部分1134的面对的相应顶表面1146、1146’之间的间隙。
然后，至少将并置的第一部分1132和第二部分1134的界面在相对低的压力下加热到结合或烧结温度，所述结合或烧结温度较佳地低于200℃，更较佳地低于180℃，或还更较佳地低于150℃。在并置的第一部分1132和第二部分1134的结合期间，在更高温度的进一步热处理之前，初始接合温度可以低于100℃。在结合温度和足够的压力下，纳米粒子1150可以扩散到第一部分1132和第二部分1134两者中，从而形成冶金结合并且将第一部分和第二部分结合在一起成为传导结构1130，如图11中所示。
接下来，如图11所示，可以在主要表面1112和1122之间沉积介电质区域1170(例如，黏着剂或底部填充物)。介电质区域1170可以直接接合到主要表面1112和1122。介电质区域1170可以填充分隔开主要表面1112和1122的间隙G1，因此所述介电质区域可以具有厚度G1。介电质区域1170可以使传导结构1130彼此电绝缘，并且所述介电质区域可以保护电性传导结构免受湿气和/或其他污染物的影响。
图13显示组件1300，所述组件1300是描述且显示于图11中的组件1100的变型。除了第二部分1334的顶表面1346'延伸到凹槽1302中并且主要表面1312可以直接与主要表面1322结合而没有使用底部填充物之外，组件1300与上述组件1100相同。
第一基板1310可以类似于上述第一基板1110，但是如图13中所示，第一部分1332的顶表面1346可以在所述主要表面下方凹陷距离A2，所述距离可以大于第一部分1132的顶表面在图11所示的主要表面1112下方凹陷的距离A1。
第二部分1334可以在与第三方向D3相反的方向上在主要表面1322上方延伸，并且可以包括实质上刚性的元件，例如金属的垂直延伸部分。第二部分1334可以具有顶表面1346’，所述顶表面具有能够超过主要表面1322一高度H2(图14A)，使得所述顶表面远离所述主要表面。第二部分1334可以界定以大角度从顶表面1346向外延伸的边缘表面或侧壁1354。
第二部分1334的顶表面1346’在主要表面1322上方突出的高度H2可以近似等于或小于第一部分1332的顶表面1346在主要表面1312下方凹陷的距离A2，使得当顶表面1346、1346’彼此结合时，主要表面1312可以直接与主要表面1322接合而不使用底部填充物。
一种制造所述组件1300(图13)的方法将参照图12A-12B而被描述。第一部分1332可以借由与上述形成第一部分1132相同的方式被形成。第二部分1334可以借由与上述形成第二部分134/334/534/734相同的方式被形成。
接下来，可以将纳米粒子1350沉积到第一部分1332和第二部分1334上，或者可选地，纳米粒子可以仅施加到所述第一部分和第二部分中的一个而不施加到另一部分。举例来说，如图14A所示，纳米粒子1350可以沉积到在主要表面1322上方延伸的顶表面1346'和第二部分1334的侧壁1354的部分上。在一范例中，纳米粒子1350可以完全或基本上完全覆盖第二部分1332的顶表面1346以及边缘表面或侧壁1354。纳米粒子1350也可以被沉积在凹槽1302内的第一部分1332的顶表面1346上。可以使用上面关于沉积纳米粒子150/350/550/750/950的方法来沉积纳米粒子1350。
接着，如图14B所示，设置在第一基板1310的主要表面1312下方的第一部分1332可以与从第二基板1320的主要表面1322延伸的第二部分1334结合。为了将第一部分1332和第二部分1334彼此结合，至少组件1300的并置的第一部分和第二部分的界面可被加热到接近结合或烧结温度的温度。然后，第一部分1332和第二部分1334彼此并置，并且第一和第二部分可以在第一和第二侧向方向上彼此对齐。
接下来，第一部分1332和第二部分1334可以彼此接触，使得被施加到个别的第一和第二部分的顶表面1346、1346’中的一个或两个的纳米粒子1350可以然后结合在一起以在第三方向D3上形成具有厚度T1的层，所述厚度例如高达3微米、或者在0.02微米到3微米之间、或者在0.05到3微米之间。因此，纳米粒子1350可以补偿个别的第一部分1332和第二部分1334的面对的对应顶表面1346、1346’之间的间隙。
然后，至少将并置的第一部分1332和第二部分1334的界面在相对低的压力之下加热至结合或烧结温度，所述结合或烧结温度较佳地低于200℃，更佳地低于180℃，或还更较佳地低于150℃。在并置的第一部分1332和第二部分1334的结合过程中，在更高的温度下进一步热处理之前，初始接合温度可以低于100℃。在结合温度和足够的压力下，纳米粒子1350可以扩散到第一部分1332和第二部分1334两者中，从而形成冶金结合并且将所述第一和第二部分结合在一起成为传导结构1330，如图13中所示。
在一范例中，在装置的温度升高到第一部分1332和第二部分1334结合的温度之前，主要表面1312和1322可以彼此并置。主要表面1312和1322可以包括介电质黏着材料和/或部分固化的B阶段聚合物材料，使得在加热组件1300之前或在组件1300的加热期间，主要表面彼此直接接合。在特定实施例中，第一基板1310和第二基板1320彼此并置，使得主要表面1312、1322彼此直接接合，并且使得第一部分1332面对第二部分1334。可以在初始温度下执行该并置动作，所述初始温度可以是室温或相对低的温度。
然后，在主要表面1312、1322被彼此接合之后，组件1300可被升高到更高的结合温度，使得纳米粒子1350可以扩散到第一部分1332和第二部分1334中，从而形成冶金结合并且将第一部分和第二部分结合在一起形成传导结构1330。在主要表面1312、1322的结合过程中及/或在结合第一部分1332和第二部分1334期间，组件1300也可以承受增大的压力。
在主要表面1312、1322彼此接合并且第一部分1332和第二部分1334彼此接合之后，接合区域1336在第三方向D3上的厚度可以从T1减小(图14B)到T2(图13)，从而使个别的第一部分1332和第二部分1334的对向的表面1346、1346’彼此靠近，如图13所示。在特定的范例中，即使在接合区域1336的厚度减小之后，主要表面1312、1322可以由间隙G2分开，间隙G2可以可选择性地填充有介电质区域，例如黏着剂或底部填充物。
图15显示组件1500，所述组件1500是描述且显示于图9中的组件900的变型。虽然组件900的变型如图15所示，然而组件1500的特征可以被添加到上述任何组件100/300/500/700/900/1100/1300中。
组件1500与上述组件900相同，除了组件1500包括金属元件1582和1584，金属元件1582和1584被配置以为沿着传导结构1530行进的信号提供电性屏蔽。
图15显示延伸到个别的主要表面1512、1522下方的凹槽中的第一和第二部分1532、1534。可以借由与上文中参照组件900所描述的相同方式借由纳米粒子1550来结合第一和第二部分1532、1534。
第一基板1510具有多个金属元件，其可以呈第一迹线1582的形式而延伸平行于主要表面1512的第二水平方向D2上。如图15所示，可以在主要表面下方的距离T3处设置第一迹线1582在平行于主要表面1512的平面中。第一迹线1582可以在横跨第一基板1510的平面中延伸，迹线的所述图案中断以允许第一部分1532在所述第一迹线之间延伸，而所述第一迹线和所述第一部分之间不接触。
第二基板1520具有多个金属元件，所述多个金属元件可以呈第二迹线1584的形式而延伸平行于主要表面1522的第一水平方向D1上。第二迹线1584可以设置在平行于主要表面1522且在所述主要表面下方距离T4处的一平面中。第二迹线1584可以在横跨第二基板1520的平面中延伸，迹线的图案中断以允许第二迹线1534在第二迹线之间延伸，而所述第二迹线与所述第二部分之间不接触。
有第一和第二迹线1582、1584在其中延伸的水平方向D2和D1可以彼此横向的。在一范例中，水平方向D2和D1可以彼此正交。具有在个别的第一基板1510和第二基板1520中以相互横向或正交的方向延伸的第一迹线1582和第二迹线1584可以为沿着传导结构1530行进的信号提供电屏蔽，从而潜在地减少不同的传导结构1530之间的串扰。在特定实施例中，第一迹线1582和第二迹线1584中的一者或两者可连接到参考电位(即电性接地)。
图16显示组件1600，组件1600是描述且显示于图15中的组件1500的变型。组件1600的特征可以被添加到上述任何组件100/300/500/700/900/1100/1300中。
组件1600与上述组件1500相同，除了组件1600包括金属元件1690，金属元件1690被配置以为了沿着传导结构1630传播的信号提供电性屏蔽。图16显示第一部分1632和第二部分1634延伸到个别的主要表面1612、1622下方的凹槽中。可以借由上文中参考组件900所描述的相同方式通过纳米粒子1650结合第一部分1632和第二部分1634。
第一基板1610具有金属元件，所述金属元件可以呈金属片1690的形式沿着平行于主要表面1612的第一和第二水平横向方向D1、D2延伸。如图16所示，金属片1690可以设置在主要表面下方的距离T5处且与主要表面1612平行的平面中。金属片1690可以在横跨第一基板1610的平面中延伸，且具有在垂直于水平方向D1、D2的垂直方向D3上延伸穿过所述金属片的开口，以允许第一部分1632延伸穿过所述金属片而所述金属片和所述第一部分之间不接触。
在特定实施例中，金属片1690可选择性地设置在与主要表面1622平行且在所述主要表面下方的一定距离处的第二基板1620内的一平面中。在这样的实施例中，金属片1690可以在横跨第二基板1620的平面中延伸，且具有沿垂直方向D3延伸穿过金属片的开口，以允许第二部分1634延伸穿过所述金属片，而所述金属片和所述第二部分之间不接触。
具有在个别的第一基板1610和第二基板1620中的一个中延伸平行于个别的主要表面1612、1622的一平面中的金属片1690可以为沿着传导结构1630行进的信号提供电性屏蔽，从而潜在地减小不同的传导结构1630之间的串扰。在特定实施例中，金属片1690可以连接到参考电位(即电性接地)。
虽然组件1500和1600显示为具有圆形横截面的第一和第二传导部分1532/1632和1534/1634，但情况不一定如此。对于在此描述的任何组件，第一和第二传导部分可以具有任何形状的横截面。例如，第一和第二传导部分中的一个或两个可以具有圆形、椭圆形、正方形、矩形或任何其他形状。在一范例中，第一传导部分和第二传导部分中的一个或两个可以设置在各个主要表面处所曝露的细长凹槽或线中，及/或第一传导部分和第二传导部分中的一个或两个可以是固体金属杆在平行于个别主要表面的水平方向上伸长。在特定范例中，第一传导部分和第二传导部分中的一个或两个可以设置在曝露于个别的主要表面处的环形凹槽中，并且/或者第一传导部分和第二传导部分中的一个或两个可以是实心金属结构，所述实心金属结构在与个别的主要表面平行的水平方向上形成环形。在一范例中，第一传导部分和第二传导部分可以被结合以形成用于MEMS隔室或其他空腔的金属隔离物。
本文描述的组件100、300、500、700、900、1100、1300、1500和1600中的任一个可以被修改以包括下面描述的纳米粒子的变型。沉积在第一传导部分和第二传导部分中的一个或两个的顶表面上的传导纳米粒子可以由一种材料或多于一种材料制成。在实例中，沉积到第一和第二传导部分中的一个或两个的顶表面上的传导纳米粒子由多种材料所制成，所述传导纳米粒子可以包括覆盖所述顶表面中的一个或两个的多个传导粒子层。
在一范例中，可将两层传导纳米粒子沉积到第一和第二传导部分中的一者或两者上。两层传导纳米粒子可以包括直接设置在个别的顶表面上的第一层传导纳米粒子以及设置在第一层传导纳米粒子上的第二层传导纳米粒子。这样的第二层传导纳米粒子可以包含至少一种不同于所述第一层传导纳米粒子所包含的至少一种材料。在一范例中，第一层传导纳米粒子可以包括诸如镍或包括镍的合金的阻障材料，并且第二层传导纳米粒子可以包括锡或包括锡的合金(例如焊料)。在这样的范例中，第一层传导纳米粒子可以是一阻障层，所述阻障层被配置为防止第二层传导纳米粒子与传导柱或结构的所述第一及/或第二部分的金属形成金属间化合物。
在这样的实施例中，在第一和第二传导部分结合以形成传导柱或元件之后，每个接合区域可以包括显示第一、第二和第三层传导纳米粒子的结构证据的杂质。这种结合结构的第一和第三层会是沉积到个别的第一和第二传导部分上的第一层传导纳米粒子，并且第一和第三层中的每一个可以包括阻障材料，例如镍或含有镍的合金。这样的结合结构的第二层会是沉积在个别的第一和第二传导部分上的第二层传导纳米粒子，并且这样的第二层中的每一个可以包括锡或含有锡的合金(例如焊料)。
在具体实例中，沉积到所述第一和第二传导部分中的一者或两者的顶表面上的传导纳米粒子是由多于一种材料所制成，所述传导纳米粒子可包括覆盖在所述顶表面中的一者或两者的三层传导粒子。所述三层传导纳米粒子可以包括直接设置在各个顶表面上的第一层传导纳米粒子、设置在第一层传导纳米粒子上的第二层传导纳米粒子以及设置在第二层传导纳米粒子上的第三层传导纳米粒子。
这种第三层传导纳米粒子可以包括与第二层传导纳米粒子所包含的至少一种材料不同的至少一种材料，及/或这种第三层传导纳米粒子可以包含至少一种材料，其不同于第一层传导纳米粒子所包括的至少一种材料。在一范例中，第一层传导纳米粒子可以包括诸如铜的种子材料，第二层传导纳米粒子可以包括诸如镍或含有镍的合金的阻障材料，并且第三层传导纳米粒子可以包括锡或包括锡(例如焊料)的合金。在这样的范例中，第二层传导纳米粒子可以是阻障层，其被配置为防止第三层传导纳米粒子与第一层传导纳米粒子的材料及/或与所述电性传导柱或结构的所述第一及/或第二传导纳米粒子的金属形成金属间化合物。
在这样的实施例中，在第一传导部分和第二传导部分连接以形成传导柱或元件之后，每个接合区域可以包括杂质，其显示第一、第二、第三、第四和第五层传导纳米粒子的结构证据。这样的结合结构的第一和第五层将是沉积到个别的第一和第二传导部分上的所述第一层传导纳米粒子，并且第一和第五层中的每一个可以包括诸如铜的种子材料。这样的结合结构的第二和第四层将是沉积在个别的第一和第二传导部分上的所述第二层传导纳米粒子，并且这样的第二层可以包括阻障材料，例如镍或包含镍的合金。这样的结合结构的第三层将是沉积在个别的第一和第二传导部分上的第三层传导纳米粒子，并且这种第三层可以包括锡或包含锡的合金(例如焊料)。
在上述实施例的变型中，第一和第二传导部分中的一个或两个可以具有设置在个别的传导部分的顶表面上的两层或三层结合结构。在这样的变型中，结合结构中的至少一个金属层可以包括纳米粒子。例如，可以在第一传导部分和第二传导部分中的一者或两者的顶表面上设置第一金属层(例如，铜或另一种金属)，可以将第二金属层(例如，镍或另一种阻障金属)设置于第一金属层上，并且可以在第二金属层上设置第三金属层(例如，锡或焊料)。第一、第二和第三金属层中的一个、两个或全部三个可以包括纳米粒子。
在特定实施例中，在升高组件的温度以结合第一和第二基板之前，可以将传导纳米粒子沉积到第一和第二传导部分中的一个或两个上，并且少量的焊料可以是设置在第一传导部分和第二传导部分中的一个或两个上的传导纳米粒子上。在这样的示例中，当组件的温度升高以连接第一传导部分和第二传导部分时，焊料可以通过毛细作用填充至少一些传导纳米粒子之间的间隙。除了传导纳米粒子之外，以这种方式使用焊料可以更好地填充面对的第一和第二传导部分之间的间隙，特别是如果第一和第二传导部分中的一个或两个的顶表面是非平面的。
与现有组件相比，本文所述的组件100、300、500、700、900、1100、1300、1500和1600可以具有一些潜在的优点。本文描述的纳米粒子层可以补偿个别的第一和第二基板的第一和第二传导部分的面对的顶表面的显著程度的非平面性。例如，如上所述，由于第一和第二部分的顶表面之间的非平面性，纳米粒子150的层可以在不同的并列的第一和第二部分之间被不同的距离挤压，所得到的接合区域136的宽度可以变化高达3微米，以迁就第一和第二部分132、134中的至少一些的并置的顶表面的非共平面性。这种补偿面对的顶表面的非共平面性的能力可以允许使用具有较大程度的第一和第二传导部分的不平坦的较便宜的传导元件的形成制程。
本文所述的组件100、300、500、700、900、1100、1300、1500和1600与现有组件相比的另一个潜在优点可以在于，当将第一和第二基板结合为如上所述的较低的翘曲度，在此描述的具有低结合或烧结温度(例如低于200℃)的纳米粒子可允许使用具有较小顶表面面积的第一和第二传导部分。因此，具有较小顶表面面积的第一传导部分与第二传导部分可形成更薄且更具弹性的传导柱，因此具有较薄传导柱的组件在长时间使用组件所造成的许多重复的热循环之后，可具有较佳的第一基板与第二基板之间的电连接的长期可靠性。
与现有组件相比，本文所述的组件100、300、500、700、900、1100、1300、1500和1600的另一个潜在优点可以是相邻的传导柱或结构130、330、530、730、930、1130或1330之间的最小间距可以减小。举例来说，传导柱或结构130、330、530、730、930、1130或1330的相邻传导柱之间的所述最小间距可以是3-5微米，而现有组件中的最小间距是20微米。
尽管描述于上文中的图2A-2F、4A-4C、6A-6D、8A-8B、图10A-10C、图12A-12B和图14A-14B中的方法步骤是参考由单一第一部分132/332/532/732/932/1132/1332和单一第二部分134/334/534/734/934/1134/1334来形成单一传导柱或结构130/330/530/730/930/1130/1330，但是应该理解，上述方法步骤也可以被用来借由从单一第一基板110/310/510/710/910/1110/1310延伸的多个第一部分或第一部分阵列以及从单一第二基板120/320/520/720/920/1120/1320延伸的多个第二部分或第二部分阵列来形成多个传导柱或m x n的传导柱阵列，m和n中的一个或两个大于1。
描述于上文中的图2A-2F、4A-4C、6A-6D、8A-8B、图10A-10C、图12A-12B和图14A-14B中的方法步骤也可被用来形成多个或阵列式的传导柱或结构130/330/530/730/930/1130/1330于多组个别的第一基板110/310/510/710/910/1110/1310和第二基板120/320/520/720/920/1120/1320上，其中第一基板最初是单个第一晶圆的一部分，并且第二基板最初是单个第二晶圆的一部分，并且在相应的第一部分132/332/532/732/932/1132/1332和第二部分134/334/534/734/934/1134/1334结合之后，结合的第一和第二晶圆可以被切割成单独的组件100/300/500/700/900/1100/1300。
举例来说，在一实施例中，多个第一基板最初是包括多个微电子元件部分的单个微电子元件晶圆的一部分，每个微电子元件部分在各个主要表面处包括第一传导部分的个别的子集，并且多个第二基板最初是包括多个基板部分的单个基板面板的一部分，每个基板部分在各个主要表面处包括第二传导部分的个别的子集。
在本文公开的一些实施例中，给定所述第一和第二基板的所述主要表面彼此间的紧密间隔，可能无法在相邻的经结合的传导柱或结构之间沉积底部填充物。在这样的例子中可能不需要底部填充，因为结合的第一和第二传导部分以及第一和第二基板的相对的主要表面可能相互接触，则可以提供结合组件的充分的结构完整性而不使用底部填充物。
在结合的传导柱或结构的局部面积密度至少为30％的区域中可能不需要底部填充，这意味着在延伸穿过传导柱或结构并平行于所述第一和第二基板的所述主要表面的给定平面中，所述平面的面积的至少30％被传导柱所占据。如果传导柱的局部面积密度至少为30％，则传导柱或结构可以为结合的组件提供足够的结构完整性，从而不需要底部填充。在一范例中，在传导柱的局部面积密度至少为50％的情况下，可能不需要底部填充。
在这样的实施例中，在相邻的传导柱或结构之间没有底部填充物的情况下，所述第一和第二基板可以与包覆成型的化合物密封在一起，及/或具有结合的传导柱或结构的所述区域的外围边界可以用诸如聚对二甲苯或二氧化硅之类的介电材料的密封剂或者用底部填充物来密封，以将湿气从具有结合的电性传导柱或结构的所述区域中排除。然而，这样的密封剂可能只需要施加在具有结合的电性传导柱或结构的区域的外围边界周围，使得密封剂不会在相邻的传导柱或结构之间延伸。
在相邻电性传导柱或结构之间没有底部填充的情况下将所述第一和第二基板结合在一起的这种组件可以比使用底部填充物时更耐翘曲。与第一和第二基板的材料相比，底部填充物可以具有相对较高的CTE(例如15-25ppm/℃)，因此当由于温度变化而经受不同的热膨胀时，底部填充物的使用可能使基板翘曲。在相邻的电性传导柱或结构之间不使用底部填充物的情况下，结合的组件可以更平坦并且由于不同的热膨胀而具有较低的翘曲风险。举例来说，这种没有底部填充物的结合结构可以用于晶片-晶圆间或晶圆-晶圆间的接合。
上文中参考图1-16所描述的组件可以用于构建各种电子系统，例如图17所示的系统1700。举例来说，根据本发明的另一实施例的系统1700包括多个模组或构件1706，诸如上文中所述的组件，与其他电子构件1708、1710和1711连接。
在所示的范例性系统1700中，所述系统可以包括电路板、主机板或竖式面板(riser panel)1702(例如可挠性印刷电路板)，并且所述电路面板可以包括多个导体1704，在图17中仅示出了其中一个，将模组或构件1706、1708、1710彼此互连。这样的电路面板1702可以将信号来回传输于包含在系统1700中的微电子封装及/或微电子组件中的每一个。然而，这仅仅是范例性的；可以使用任何合适的结构以用于在模组或构件1706之间进行电性连接。
在特定实施例中，系统1700还可以包括诸如半导体晶片1708的处理器，使得每个模组或构件1706可以被配置以在一时脉周期(clock cycle)中并行地传输N个数据位元，并且所述处理器可以被配置以在一时脉周期中并行地传送M个数据位元，M大于或等于N。
在图17所示的范例中，组件1708是半导体晶片，构件1710是显示屏幕，但是系统1700中可以使用任何其他构件。当然，尽管在图17中为了清楚地说明仅显示出了两个附加构件1708和1711，系统1700可以包括任何数量的这种构件。
模组或构件1706和构件1708和1711可以安装在公共壳体1701中，以虚线示意性地示出，并且可以根据需要彼此电性互连以形成期望的电路。壳体1701被描述为可用于例如蜂窝电话或个人数位助理的类型的便携式壳体，并且屏幕1710可以暴露在壳体的表面处。在实施例中，其中结构1706包括诸如成像晶片之类的光敏元件，也可以提供透镜1711或其它光学装置用于将光路由到所述结构。再次地，图17中所示的简化系统仅仅是示例性的；其他系统，包括通常被认为是固定结构的系统，诸如桌上型电脑、路由器等可以使用上面讨论的结构来制造。
尽管已经参照特定实施例描述了本发明，但是应当理解的是，这些实施例仅仅是对本发明的原理和应用的说明。因此可以理解的是，可以对这些说明性的实施例作出许多修改，并且可以设计出其它布置而不脱离由所权利要求所限定的本发明的精神和范畴。
将意识到，各种附属项和其中阐述的特征可以以与在最初的权利要求中所提出的方式不同的方式进行组合。还将意识到的是，与各个实施例有关的所描述的特征可以与所描述的实施例中的其他实施例共享。

Claims (22)

1.一种制造微电子组件的方法，其包含：
将在第一基板的第一表面处的第一电性传导元件的顶表面与在第二基板的主要表面处的第二电性传导元件的顶表面并置，所述第一基板的所述第一表面和所述第二基板的所述主要表面每个包含介电材料，其中所述第一电性传导元件的所述顶表面是下凹至所述第一基板的所述第一表面之下，且所述第二电性传导元件的所述顶表面是下凹至所述第二基板的主要表面之下，且电性传导纳米粒子是被设置在所述第一电性传导元件和所述第二电性传导元件的所述顶表面之间，所述电性传导纳米粒子具有的长度尺寸是小于100纳米；
所述第一表面的所述介电材料与所述主要表面的所述介电材料直接接合；并且
至少在经并置的所述第一电性传导元件和所述第二电性传导元件的界面处提高温度到一结合温度，在所述结合温度时，所述电性传导纳米粒子造成冶金结合形成于经并置的所述第一电性传导元件和所述第二电性传导元件之间。
2.如权利要求1的方法，其进一步包含形成所述电性传导纳米粒子，其包含将至少一个接收表面以一电流密度曝露于无电电镀槽或电解槽，所述至少一个接收表面是所述第一电性传导元件和所述第二电性传导元件的所述顶表面中的至少一者，并且所述电流密度大于所述电解槽的质量传输限制电流密度。
3.如权利要求1的方法，其中所述第一电性传导元件和所述第二电性传导元件中的至少一者包含电性传导衬垫或电性传导迹线。
4.如权利要求1的方法，其进一步包括在所述第一电性传导元件的所述顶表面和所述电性传导纳米粒子之间形成阻障材料。
5.如权利要求1的方法，其进一步包含蚀刻所述第二基板的所述主要表面以形成凹槽并且曝露所述第二电性传导元件的所述顶表面于所述凹槽之中。
6.如权利要求1的方法，其中在所述第一电性传导元件和所述第二电性传导元件的所述顶表面的所述并置之前，所述电性传导纳米粒子被放置在所述第一电性传导元件和所述第二电性传导元件两者的所述顶表面上。
7.如权利要求6的方法，其中在所述第一电性传导元件和所述第二电性传导元件的所述顶表面的所述并置之前，所述电性传导纳米粒子包含覆盖在每个顶表面的第一层电性传导纳米粒子和第二层电性传导纳米粒子，所述第一层电性传导纳米粒子被放置在各别顶表面上并且所述第二层电性传导纳米粒子被放置在所述第一层电性传导纳米粒子上，所述第二层电性传导纳米粒子包含至少一种材料，所述至少一种材料是不同于所述第一层电性传导纳米粒子所包含的至少一种材料。
8.如权利要求7的方法，其中在所述第一电性传导元件和所述第二电性传导元件的所述顶表面的所述并置之前，在每个顶表面上的所述电性传导纳米粒子包含形成在各别的第二层电性传导纳米粒子上的第三层电性传导纳米粒子，所述第三层电性传导纳米粒子包含至少一种材料，所述至少一种材料是不同于所述第二层电性传导纳米粒子所包含的至少一种材料，所述第二层电性传导纳米粒子包含阻障金属，所述阻障金属经配置以避免所述第三层电性传导纳米粒子的金属渗透到所述第一层电性传导纳米粒子之中。
9.如权利要求1的方法，其中在所述第一电性传导元件和所述第二电性传导元件的所述顶表面的所述并置之前，所述传导纳米粒子被设置在所述第一电性传导元件或第二电性传导元件中的一个的所述顶表面上。
10.如权利要求1的方法，其进一步包含在所述温度提高之前，沉积焊料于所述第一电性传导元件和所述第二电性传导元件的所述顶表面中的至少一者上的所述电性传导纳米粒子之上，其中在所述温度的提高过程中，所述焊料经由毛细作用而填入至少一些所述电性传导纳米粒子之间的间隙。
11.如权利要求1的方法，其中在所述第一表面和所述主要表面处的介电材料每个都包含未完全固化的B阶段材料(B-stage material)层，并且在所述温度的提高过程中，所述B阶段材料才被完全地固化。
12.一种微电子组件，其包含：
第一构件，其包含具有第一表面的基板和在所述第一表面处的多个实质上刚性的金属的第一杆，所述第一杆从所述第一表面在第一方向上向外延伸，每个第一杆具有顶表面，所述顶表面通常面向所述第一方向，每个所述第一杆的所述顶表面突出超过所述第一表面一高度，使得所述顶表面是远离所述第一表面，每个第一杆具有从其之所述顶表面以大角度延伸的边缘表面；以及
第二构件，其包含具有主要表面的基板以及曝露在所述主要表面处的多个第二电性传导元件，每个第二电性传导元件具有通常面向第二方向的顶表面，每个第二电性传导元件的所述顶表面曝露在延伸于所述主要表面之下的凹槽中，
所述第一杆与所述第二电性传导元件结合，使得所述第一杆的所述顶表面至少部分地面对所述第二电性传导元件的所述顶表面，并且使得至少一些所述第一杆至少部分地延伸进入所述第二构件的对应的所述凹槽之中，
每个第一杆是借由接合区域电性地互连至对应的所述第二电性传导元件，所述接合区域包括杂质，所述杂质显示在接合制程中使用具有小于100纳米的长度尺寸的电性传导纳米粒子的结构证据，每个接合区域包括将所述接合区域的剩余部分与对应的所述第一杆和对应的所述第二电性传导元件分开的阻障材料。
13.如权利要求12的微电子组件，其中每个接合区域包含杂质，所述杂质显示第一层电性传导纳米粒子、第二层电性传导纳米粒子和第三层电性传导纳米粒子的结构证据，所述第二层电性传导纳米粒子设置在所述第一层电性传导纳米粒子和所述第三层电性传导纳米粒子之间并且包含至少一种材料，所述至少一种材料不同于所述第一层电性传导纳米粒子所包含的至少一种材料以及不同于所述第三层电性传导纳米粒子所包含的至少一种材料，所述第一层电性传导纳米粒子和所述第三层电性传导纳米粒子包含所述阻障材料。
14.如权利要求12的微电子组件，其中每个接合区域包含杂质，所述杂质显示第一层电性传导纳米粒子、第二层电性传导纳米粒子、第三层电性传导纳米粒子、第四层电性传导纳米粒子和第五层电性传导纳米粒子的结构证据，所述第一层电性传导纳米粒子和所述第五层电性传导纳米粒子至少部分地分别渗透到所述第一杆和所述第二电性传导元件之中，所述第二层电性传导纳米粒子和所述第四层电性传导纳米粒子每个包含至少一种材料，所述至少一种材料分别不同于所述第一层电性传导纳米粒子和所述第五层电性传导纳米粒子所包含的至少一种材料，所述第二层电性传导纳米粒子和所述第四层电性传导纳米粒子的每个提供所述阻障材料，所述阻障材料经配置以避免所述第三层电性传导纳米粒子的金属渗透到所述第一层电性传导纳米粒子和所述第五层电性传导纳米粒子之中。
15.如权利要求12的微电子组件，其中每个接合区域包含延伸到微通孔之中的焊料，所述微通孔位在至少一些所述电性传导纳米粒子之间，每个微通孔具有小于0.5微米的最大宽度。
16.如权利要求12的微电子组件，其中所述第一构件的所述基板的所述第一表面以及所述第二构件的所述基板的所述主要表面每个包含介电材料，并且所述第一表面的所述介电材料是与所述主要表面的所述介电材料直接地接合。
17.如权利要求12的微电子组件，其中所述第一构件和所述第二构件的所述基板中的至少一者具有金属元件，所述金属元件在各别的基板中以第一和第二横向方向在各自的平面中延伸，所述金属元件经配置以提供电磁屏蔽来减少传输于所述第一杆和所述第二电性传导元件之间的讯号的杂讯。
18.如权利要求17的微电子组件，其中所述第一构件的所述基板和所述第二构件的所述基板都具有所述金属元件，所述金属元件在各别的基板中以第一和第二横向方向在各自的平面中延伸，所述第一构件的所述金属元件包含在所述第一方向上延伸的迹线，并且所述第二构件的所述金属元件包含在所述第二方向上延伸的迹线。
19.如权利要求17的微电子组件，其中所述金属元件是连续的金属片，所述连续的金属片具有在所述第一方向和所述第二方向上与所述第一杆和所述第二电性传导元件对准而延伸穿过所述连续的金属片的开口。
20.如权利要求12的微电子组件，其中所述第一构件或所述第二构件中的至少一者是包含主动半导体装置的微电子元件。
21.一种微电子系统，其包含根据权利要求12的微电子组件以及电性连接至所述组件的一个或多个其他电子构件。
22.如权利要求21的微电子系统，其进一步包含壳体，所述组件和所述其他电子构件是安装于所述壳体。
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