JP2011076079A - 表示装置、および電子機器 - Google Patents
表示装置、および電子機器 Download PDFInfo
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- JP2011076079A JP2011076079A JP2010195925A JP2010195925A JP2011076079A JP 2011076079 A JP2011076079 A JP 2011076079A JP 2010195925 A JP2010195925 A JP 2010195925A JP 2010195925 A JP2010195925 A JP 2010195925A JP 2011076079 A JP2011076079 A JP 2011076079A
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- H01L29/78693—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate the semiconducting oxide being amorphous
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- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
- G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
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- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
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- H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
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- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1255—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs integrated with passive devices, e.g. auxiliary capacitors
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
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Abstract
【解決手段】画素に、少なくとも、表示素子、容量素子、インバータおよびスイッチを設ける。容量素子に保持された信号と、インバータから出力される信号とを用いて、スイッチを制御することにより、表示素子に電圧が供給されるようにする。インバータおよびスイッチを同じ極性を持つトランジスタで構成することができる。また、画素を構成する半導体層を透光性を有する材料で形成してもよい。また、ゲート電極、ドレイン電極および容量電極を透光性を有する導電層を用いて形成してもよい。このように透光性材料で画素を形成することで、メモリが配置された画素を有していながら、その表示装置を透過型にすることができる。
【選択図】図16
Description
本実施の形態では表示装置について説明する。
本実施の形態では表示装置について説明する。
本実施の形態では、表示装置について説明する。本実施の形態に係る表示装置は、映像信号の入力を制御する機能を有する第1の回路と、映像信号を保持する機能を有する第2の回路と、液晶素子等の表示素子に供給される電圧の極性を制御する機能を有する第3の回路と、表示素子とを含む表示装置である。本実施の形態の表示装置は、画素に情報を記憶するメモリ機能を備えている。
本実施の形態では、表示装置(半導体装置)が有する回路について、図面を参照して説明する。
本実施の形態では、表示装置(半導体装置)が有する回路について、図面を参照して説明する。
本実施の形態では、表示装置(半導体装置)が有する回路について、図面を参照して説明する。
図37A1乃至図39を用いて、表示装置(半導体装置)の作製方法の一形態を説明する。本実施の形態では、異なる構造の2つの薄膜トランジスタを同一基板上に作製する方法の一例を説明する。
本実施の形態では、表示装置を備えた電子機器の例について説明する。
本実施の形態では、本明細書に開示されている発明に係る半導体装置、および表示装置などについて説明をする。
102 回路
103 回路
104 回路
105 絶縁層
106 導電層
107 媒質
108 基板
109 導電層
202 絶縁層
203 半導体層
205 絶縁層
206 導電層
207 トランジスタ
208 容量素子
209 容量素子
201a、201aa、201ab、201b、201ba、201bb、201c、2
01ca、201cb、201da、201db、201eb、201fb 導電層
203a 半導体層
204a、204aa、204ab、204b、204ba、204bb、204c、2
04ca、204cb、204d、204da、204db、204e、204ea、2
04eb、204fb、204gb、204hb 導電層
206a 導電層
Claims (6)
- 画素電極を有する表示素子と、
映像信号の入力を制御する機能を有する第1の回路と、
前記映像信号を保持する機能を有する第2の回路と、
前記画素電極に供給される電圧の極性を制御する機能を有する第3の回路と、
を含み、
前記第1乃至第3の回路は、透光性を有する材料で形成され、
前記画素電極は、前記第1乃至第3の回路の上方に配置されていることを特徴とする表示装置。 - 第1のスイッチを有する第1の回路と、
前記第1のスイッチを介して信号が入力される第1の容量素子、および第2の容量素子、ならびに、入力端子が前記第1の容量素子に電気的に接続され、かつ出力端子が前記第2の容量素子に電気的に接続されているインバータを有する第2の回路と、
制御端子が前記第1の容量素子に電気的に接続されている第2のスイッチ、および制御端子が前記第2の容量素子に電気的に接続されている第3のスイッチを有する第3の回路と、
前記第2のスイッチおよび前記第3のスイッチに電気的に接続されている画素電極を含む表示素子と、
を含むことを特徴とする表示装置。 - 請求項2において、
前記第1のスイッチを介して、前記第1の容量素子に電気的に接続されている第1の配線と、
第2の配線と、
前記第2のスイッチおよび前記第3のスイッチを介して前記第2の配線に電気的に接続されている第3の配線と、
を含むことを特徴とする表示装置。 - 請求項3において、
前記第1の配線には映像信号が入力されることを特徴とする表示装置。 - 請求項2乃至4のいずれか1項において、
前記画素電極、前記第1乃至第3のスイッチ、前記第1乃至第2の容量素子、ならびに、前記インバータは、透光性を有する層で形成され、
前記画素電極は、前記第1乃至第3のスイッチ、第1乃至第2の容量素子、およびインバータの上方に配置されていることを特徴とする表示装置。 - 請求項1乃至請求項5に記載の表示装置と、操作スイッチとを具備する電子機器。
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JP2019185242A Withdrawn JP2020017755A (ja) | 2009-09-04 | 2019-10-08 | 半導体装置 |
JP2020119941A Active JP7213848B2 (ja) | 2009-09-04 | 2020-07-13 | 半導体装置 |
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WO2011148537A1 (ja) * | 2010-05-24 | 2011-12-01 | シャープ株式会社 | 薄膜トランジスタ基板及びその製造方法 |
JP2012256857A (ja) * | 2011-04-22 | 2012-12-27 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
JP2013009310A (ja) * | 2011-05-20 | 2013-01-10 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
JP2013084887A (ja) * | 2011-09-27 | 2013-05-09 | Toppan Printing Co Ltd | 薄膜トランジスタ、薄膜トランジスタの製造方法及び画像表示装置 |
KR20130099850A (ko) * | 2012-02-29 | 2013-09-06 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
JP2013206919A (ja) * | 2012-03-27 | 2013-10-07 | Sony Corp | 薄膜トランジスタおよびその製造方法ならびに表示装置 |
JP2013219348A (ja) * | 2012-03-14 | 2013-10-24 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
JP2014002827A (ja) * | 2012-05-25 | 2014-01-09 | Semiconductor Energy Lab Co Ltd | 記憶素子の駆動方法 |
JP2014007386A (ja) * | 2012-05-11 | 2014-01-16 | Semiconductor Energy Lab Co Ltd | 半導体装置及び電子機器 |
JP2014067867A (ja) * | 2012-09-26 | 2014-04-17 | Toppan Printing Co Ltd | 薄膜トランジスタ及びディスプレイパネル |
WO2014104265A1 (en) * | 2012-12-28 | 2014-07-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
WO2014103900A1 (en) * | 2012-12-25 | 2014-07-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
JP2015128163A (ja) * | 2012-12-28 | 2015-07-09 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP2015191038A (ja) * | 2014-03-27 | 2015-11-02 | ソニー株式会社 | 表示装置、電子機器および基板 |
JP2016157856A (ja) * | 2015-02-25 | 2016-09-01 | エルジー ディスプレイ カンパニー リミテッド | シリコン系薄膜半導体装置、およびシリコン系薄膜半導体装置の製造方法 |
JP2016177284A (ja) * | 2015-03-19 | 2016-10-06 | 株式会社半導体エネルギー研究所 | 液晶表示装置及び該液晶表示装置を用いた電子機器 |
JP2016201539A (ja) * | 2015-04-13 | 2016-12-01 | 株式会社半導体エネルギー研究所 | 半導体装置およびタッチパネル |
JP2016220251A (ja) * | 2011-05-16 | 2016-12-22 | 株式会社半導体エネルギー研究所 | プログラマブルロジックデバイス |
JP2017054899A (ja) * | 2015-09-09 | 2017-03-16 | 株式会社半導体エネルギー研究所 | 半導体装置、表示装置及び該表示装置を用いた電子機器 |
JP2017120893A (ja) * | 2015-12-28 | 2017-07-06 | エルジー ディスプレイ カンパニー リミテッド | 薄膜トランジスタ基板 |
JP2017212326A (ja) * | 2016-05-25 | 2017-11-30 | 凸版印刷株式会社 | 薄膜トランジスタアレイ基板、そのパターン形成方法及び画像表示装置 |
JP2018026551A (ja) * | 2016-07-27 | 2018-02-15 | 株式会社半導体エネルギー研究所 | トランジスタ、半導体装置及び電子機器 |
WO2018159389A1 (ja) * | 2017-02-28 | 2018-09-07 | シャープ株式会社 | Tft基板、tft基板を備えた走査アンテナ、およびtft基板の製造方法 |
JP2019024124A (ja) * | 2013-06-21 | 2019-02-14 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP2019050405A (ja) * | 2013-10-31 | 2019-03-28 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP2019114809A (ja) * | 2013-05-10 | 2019-07-11 | 株式会社半導体エネルギー研究所 | 表示装置 |
KR20190119680A (ko) * | 2013-12-27 | 2019-10-22 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
JP2019195064A (ja) * | 2013-04-04 | 2019-11-07 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
JP2020004981A (ja) * | 2014-04-18 | 2020-01-09 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP2020053688A (ja) * | 2012-08-02 | 2020-04-02 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP2020074406A (ja) * | 2019-12-19 | 2020-05-14 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP2020115580A (ja) * | 2012-08-10 | 2020-07-30 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP2021005722A (ja) * | 2011-05-05 | 2021-01-14 | 株式会社半導体エネルギー研究所 | 表示装置 |
JP2021082823A (ja) * | 2014-12-02 | 2021-05-27 | 株式会社半導体エネルギー研究所 | 表示装置 |
JP2021106274A (ja) * | 2013-12-27 | 2021-07-26 | 株式会社半導体エネルギー研究所 | 表示装置 |
US11075255B2 (en) | 2016-12-27 | 2021-07-27 | Semiconductor Energy Laboratory Co., Ltd. | Display panel, display device, input/output device, and data processing device |
KR20210145310A (ko) * | 2012-04-13 | 2021-12-01 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
JP2022103303A (ja) * | 2016-11-23 | 2022-07-07 | 株式会社半導体エネルギー研究所 | 表示装置、電子機器 |
JP2022119801A (ja) * | 2014-09-05 | 2022-08-17 | 株式会社半導体エネルギー研究所 | 発光装置 |
US11935959B2 (en) | 2012-07-20 | 2024-03-19 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device comprising oxide semiconductor film comprising nanocrystal |
Families Citing this family (69)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101812683B1 (ko) * | 2009-10-21 | 2017-12-27 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 제작방법 |
JP2012151453A (ja) * | 2010-12-28 | 2012-08-09 | Semiconductor Energy Lab Co Ltd | 半導体装置および半導体装置の駆動方法 |
TWI536502B (zh) * | 2011-05-13 | 2016-06-01 | 半導體能源研究所股份有限公司 | 記憶體電路及電子裝置 |
US8804344B2 (en) | 2011-06-10 | 2014-08-12 | Scott Moncrieff | Injection molded control panel with in-molded decorated plastic film |
US8878589B2 (en) | 2011-06-30 | 2014-11-04 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and driving method thereof |
CN103765306B (zh) * | 2011-08-10 | 2016-08-31 | 夏普株式会社 | 液晶显示装置和液晶显示装置的制造方法 |
US8736315B2 (en) | 2011-09-30 | 2014-05-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
JP6099372B2 (ja) | 2011-12-05 | 2017-03-22 | 株式会社半導体エネルギー研究所 | 半導体装置及び電子機器 |
US9419146B2 (en) | 2012-01-26 | 2016-08-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
US20150048360A1 (en) * | 2012-03-21 | 2015-02-19 | Sharp Kabushiki Kaisha | Semiconductor device and semiconductor device manufacturing method |
US20130265069A1 (en) * | 2012-04-10 | 2013-10-10 | Shenzhen China Star Optoelectronics Technology Co. Ltd. | Liquid Crystal Panel, Liquid Crystal Module, and Method Of Determining Reason Behind Bad Display |
CN102790012A (zh) * | 2012-07-20 | 2012-11-21 | 京东方科技集团股份有限公司 | 阵列基板的制造方法及阵列基板、显示装置 |
JP2014038911A (ja) * | 2012-08-13 | 2014-02-27 | Sony Corp | 薄膜トランジスタおよびその製造方法、並びに表示装置および電子機器 |
KR102241249B1 (ko) | 2012-12-25 | 2021-04-15 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 저항 소자, 표시 장치, 및 전자기기 |
KR102109166B1 (ko) * | 2013-01-15 | 2020-05-12 | 삼성디스플레이 주식회사 | 박막 트랜지스터 및 이를 구비하는 표시 기판 |
JP6186757B2 (ja) * | 2013-03-06 | 2017-08-30 | セイコーエプソン株式会社 | 電気光学装置及び電子機器 |
JP6406926B2 (ja) | 2013-09-04 | 2018-10-17 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP6345544B2 (ja) * | 2013-09-05 | 2018-06-20 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
TWI550332B (zh) * | 2013-10-07 | 2016-09-21 | 電子墨水加利福尼亞有限責任公司 | 用於彩色顯示裝置的驅動方法 |
CN103560110B (zh) * | 2013-11-22 | 2016-02-17 | 京东方科技集团股份有限公司 | 一种阵列基板及其制备方法、显示装置 |
KR20150116942A (ko) * | 2014-04-08 | 2015-10-19 | 삼성디스플레이 주식회사 | 용기 덮개 겸용 표시 장치 |
JP6368139B2 (ja) * | 2014-05-07 | 2018-08-01 | 株式会社半導体エネルギー研究所 | タッチセンサ |
JP6609764B2 (ja) * | 2014-05-16 | 2019-11-27 | 国立大学法人 名古屋工業大学 | p型酸化亜鉛膜の製造方法 |
CN203983289U (zh) | 2014-06-17 | 2014-12-03 | 京东方科技集团股份有限公司 | 薄膜晶体管、阵列基板及显示装置 |
JP6436660B2 (ja) | 2014-07-07 | 2018-12-12 | 三菱電機株式会社 | 薄膜トランジスタ基板およびその製造方法 |
JP6196387B2 (ja) * | 2014-08-07 | 2017-09-13 | シャープ株式会社 | アクティブマトリクス基板 |
US9766517B2 (en) * | 2014-09-05 | 2017-09-19 | Semiconductor Energy Laboratory Co., Ltd. | Display device and display module |
CN111933668A (zh) * | 2014-12-29 | 2020-11-13 | 株式会社半导体能源研究所 | 半导体装置 |
US9633710B2 (en) | 2015-01-23 | 2017-04-25 | Semiconductor Energy Laboratory Co., Ltd. | Method for operating semiconductor device |
JP6630720B2 (ja) | 2015-03-03 | 2020-01-15 | 株式会社半導体エネルギー研究所 | 表示装置 |
US10008609B2 (en) * | 2015-03-17 | 2018-06-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, method for manufacturing the same, or display device including the same |
CN104820514B (zh) * | 2015-04-01 | 2017-05-10 | 上海中航光电子有限公司 | 触控显示面板及其驱动方法 |
US10671204B2 (en) | 2015-05-04 | 2020-06-02 | Semiconductor Energy Laboratory Co., Ltd. | Touch panel and data processor |
EP3125296B1 (en) * | 2015-07-30 | 2020-06-10 | Ricoh Company, Ltd. | Field-effect transistor, display element, image display device, and system |
KR102568632B1 (ko) * | 2016-04-07 | 2023-08-21 | 삼성디스플레이 주식회사 | 트랜지스터 표시판, 그 제조 방법 및 이를 포함하는 표시 장치 |
KR102587229B1 (ko) | 2016-04-22 | 2023-10-12 | 삼성디스플레이 주식회사 | 표시 장치 |
CN106057141A (zh) * | 2016-05-04 | 2016-10-26 | 深圳市华星光电技术有限公司 | 伽马参考电压产生电路以及显示器 |
KR102623624B1 (ko) * | 2016-05-18 | 2024-01-10 | 삼성디스플레이 주식회사 | 트랜지스터 표시판 및 그 제조 방법 |
KR102457244B1 (ko) * | 2016-05-19 | 2022-10-21 | 삼성디스플레이 주식회사 | 표시 장치 |
TWI575732B (zh) * | 2016-05-25 | 2017-03-21 | 友達光電股份有限公司 | 畫素結構及其顯示面板 |
KR102626961B1 (ko) * | 2016-07-27 | 2024-01-17 | 엘지디스플레이 주식회사 | 하이브리드 타입의 박막 트랜지스터 및 이를 이용한 유기발광 표시장치 |
EP3506337A4 (en) * | 2016-08-23 | 2019-08-28 | Toppan Printing Co., Ltd. | ORGANIC THIN FILM TRANSISTOR, METHOD FOR MANUFACTURING THEREOF, AND IMAGE DISPLAY DEVICE |
JP2018074076A (ja) * | 2016-11-02 | 2018-05-10 | 株式会社ジャパンディスプレイ | 表示装置 |
KR20180070367A (ko) | 2016-12-16 | 2018-06-26 | 엘지디스플레이 주식회사 | 전계발광 표시장치 |
US10811443B2 (en) * | 2017-04-06 | 2020-10-20 | Sharp Kabushiki Kaisha | TFT substrate, and scanning antenna provided with TFT substrate |
KR20240015740A (ko) | 2017-06-02 | 2024-02-05 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치, 전자 부품, 및 전자 기기 |
US10665604B2 (en) | 2017-07-21 | 2020-05-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, semiconductor wafer, memory device, and electronic device |
KR102341412B1 (ko) * | 2017-08-29 | 2021-12-22 | 삼성디스플레이 주식회사 | 표시 장치 |
JP6558420B2 (ja) * | 2017-09-27 | 2019-08-14 | セイコーエプソン株式会社 | 電気光学装置及び電子機器 |
US10573254B2 (en) * | 2017-10-05 | 2020-02-25 | Innolux Corporation | Memory in pixel display device with low power consumption |
JP6853770B2 (ja) * | 2017-11-30 | 2021-03-31 | 株式会社Joled | 半導体装置および表示装置 |
JP7362486B2 (ja) | 2017-12-22 | 2023-10-17 | 株式会社半導体エネルギー研究所 | 表示パネル、表示装置、入出力装置、情報処理装置 |
CN107958656B (zh) * | 2018-01-08 | 2019-07-02 | 武汉华星光电技术有限公司 | Goa电路 |
US11127582B2 (en) * | 2018-01-11 | 2021-09-21 | Cymer, Llc | Electrode for a discharge chamber |
KR102637791B1 (ko) * | 2018-02-13 | 2024-02-19 | 삼성디스플레이 주식회사 | 디스플레이 장치 |
TWI650748B (zh) * | 2018-03-02 | 2019-02-11 | 友達光電股份有限公司 | 顯示面板及顯示面板的驅動方法 |
US20190280051A1 (en) * | 2018-03-09 | 2019-09-12 | Int Tech Co., Ltd. | Electroluminescent display integrated with touch sensor and method of forming the same |
JP6888581B2 (ja) | 2018-04-11 | 2021-06-16 | 株式会社デンソー | 半導体装置およびその製造方法 |
WO2020039291A1 (ja) * | 2018-08-21 | 2020-02-27 | 株式会社半導体エネルギー研究所 | 表示装置および電子機器 |
JP2020052217A (ja) * | 2018-09-26 | 2020-04-02 | 株式会社ジャパンディスプレイ | 表示装置及び電子看板 |
CN109336047B (zh) * | 2018-10-08 | 2020-07-28 | 东北大学 | 一种基于mems工艺的多层结构离子源芯片及质谱分析进样系统 |
KR20200052592A (ko) * | 2018-11-07 | 2020-05-15 | 엘지디스플레이 주식회사 | 박막 트랜지스터를 포함하는 표시장치 및 그 제조방법 |
KR20190051917A (ko) | 2019-04-26 | 2019-05-15 | 변상범 | 삼각형 구조를 갖는 리액터 제작 방법 |
CN110189639B (zh) * | 2019-06-28 | 2020-12-04 | 昆山国显光电有限公司 | 显示基板、显示面板及显示装置 |
GB2587793B (en) * | 2019-08-21 | 2023-03-22 | Pragmatic Printing Ltd | Electronic circuit comprising transistor and resistor |
US11379231B2 (en) | 2019-10-25 | 2022-07-05 | Semiconductor Energy Laboratory Co., Ltd. | Data processing system and operation method of data processing system |
CN111293178A (zh) * | 2020-02-21 | 2020-06-16 | 合肥鑫晟光电科技有限公司 | 一种薄膜晶体管及其制备方法 |
CN113570844B (zh) * | 2020-04-28 | 2022-09-09 | 清华大学 | 激光遥控开关系统 |
CN112258987B (zh) * | 2020-10-23 | 2022-06-21 | 合肥维信诺科技有限公司 | 透光显示面板和显示装置 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58198084A (ja) * | 1982-05-14 | 1983-11-17 | セイコーインスツルメンツ株式会社 | 表示素子 |
JPH07253764A (ja) * | 1994-03-15 | 1995-10-03 | Sharp Corp | 液晶表示装置 |
JP2006165532A (ja) * | 2004-11-10 | 2006-06-22 | Canon Inc | 非晶質酸化物を利用した半導体デバイス |
JP2007298602A (ja) * | 2006-04-28 | 2007-11-15 | Toppan Printing Co Ltd | 構造体、透過型液晶表示装置、半導体回路の製造方法および透過型液晶表示装置の製造方法 |
JP2010085817A (ja) * | 2008-10-01 | 2010-04-15 | Seiko Epson Corp | 電気泳動表示装置および電子機器、電気泳動表示装置の駆動方法 |
Family Cites Families (208)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60198861A (ja) | 1984-03-23 | 1985-10-08 | Fujitsu Ltd | 薄膜トランジスタ |
JPH0244256B2 (ja) | 1987-01-28 | 1990-10-03 | Kagaku Gijutsucho Mukizaishitsu Kenkyushocho | Ingazn2o5deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho |
JPH0244258B2 (ja) | 1987-02-24 | 1990-10-03 | Kagaku Gijutsucho Mukizaishitsu Kenkyushocho | Ingazn3o6deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho |
JPH0244260B2 (ja) | 1987-02-24 | 1990-10-03 | Kagaku Gijutsucho Mukizaishitsu Kenkyushocho | Ingazn5o8deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho |
JPS63210023A (ja) | 1987-02-24 | 1988-08-31 | Natl Inst For Res In Inorg Mater | InGaZn↓4O↓7で示される六方晶系の層状構造を有する化合物およびその製造法 |
JPH0244262B2 (ja) | 1987-02-27 | 1990-10-03 | Kagaku Gijutsucho Mukizaishitsu Kenkyushocho | Ingazn6o9deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho |
JPH0244263B2 (ja) | 1987-04-22 | 1990-10-03 | Kagaku Gijutsucho Mukizaishitsu Kenkyushocho | Ingazn7o10deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho |
JPH0282221A (ja) | 1988-09-20 | 1990-03-22 | Seiko Epson Corp | 電気光学素子の配線方法 |
US5162901A (en) | 1989-05-26 | 1992-11-10 | Sharp Kabushiki Kaisha | Active-matrix display device with added capacitance electrode wire and secondary wire connected thereto |
JPH07113728B2 (ja) | 1989-05-26 | 1995-12-06 | シャープ株式会社 | アクティブマトリクス基板 |
JPH05251705A (ja) | 1992-03-04 | 1993-09-28 | Fuji Xerox Co Ltd | 薄膜トランジスタ |
JPH06202156A (ja) * | 1992-12-28 | 1994-07-22 | Sharp Corp | ドライバーモノリシック駆動素子 |
JPH06326310A (ja) | 1993-05-14 | 1994-11-25 | Toshiba Corp | アクティブマトリクス型表示装置 |
JP3630489B2 (ja) | 1995-02-16 | 2005-03-16 | 株式会社東芝 | 液晶表示装置 |
JP3479375B2 (ja) | 1995-03-27 | 2003-12-15 | 科学技術振興事業団 | 亜酸化銅等の金属酸化物半導体による薄膜トランジスタとpn接合を形成した金属酸化物半導体装置およびそれらの製造方法 |
EP0820644B1 (en) | 1995-08-03 | 2005-08-24 | Koninklijke Philips Electronics N.V. | Semiconductor device provided with transparent switching element |
US5945972A (en) | 1995-11-30 | 1999-08-31 | Kabushiki Kaisha Toshiba | Display device |
JP3625598B2 (ja) | 1995-12-30 | 2005-03-02 | 三星電子株式会社 | 液晶表示装置の製造方法 |
JP3533074B2 (ja) | 1997-10-20 | 2004-05-31 | 日本電気株式会社 | Vram機能内蔵のledパネル |
JP4663829B2 (ja) | 1998-03-31 | 2011-04-06 | 三菱電機株式会社 | 薄膜トランジスタおよび該薄膜トランジスタを用いた液晶表示装置 |
JP2006237624A (ja) | 1998-06-12 | 2006-09-07 | Semiconductor Energy Lab Co Ltd | 半導体装置及びインバータ回路 |
JP2001051292A (ja) | 1998-06-12 | 2001-02-23 | Semiconductor Energy Lab Co Ltd | 半導体装置および半導体表示装置 |
JP4170454B2 (ja) | 1998-07-24 | 2008-10-22 | Hoya株式会社 | 透明導電性酸化物薄膜を有する物品及びその製造方法 |
JP2000150861A (ja) | 1998-11-16 | 2000-05-30 | Tdk Corp | 酸化物薄膜 |
JP3276930B2 (ja) | 1998-11-17 | 2002-04-22 | 科学技術振興事業団 | トランジスタ及び半導体装置 |
JP2000235355A (ja) | 1999-02-15 | 2000-08-29 | Sony Corp | 電気光学装置、電気光学装置用の駆動基板、及びこれらの製造方法 |
JP4583540B2 (ja) | 1999-03-04 | 2010-11-17 | 株式会社半導体エネルギー研究所 | 半導体装置およびその作製方法 |
US6674136B1 (en) | 1999-03-04 | 2004-01-06 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having driver circuit and pixel section provided over same substrate |
TW515109B (en) * | 1999-06-28 | 2002-12-21 | Semiconductor Energy Lab | EL display device and electronic device |
TW460731B (en) | 1999-09-03 | 2001-10-21 | Ind Tech Res Inst | Electrode structure and production method of wide viewing angle LCD |
TW484117B (en) | 1999-11-08 | 2002-04-21 | Semiconductor Energy Lab | Electronic device |
TW573165B (en) | 1999-12-24 | 2004-01-21 | Sanyo Electric Co | Display device |
JP3838332B2 (ja) * | 2000-01-24 | 2006-10-25 | 日本電気株式会社 | 透過型液晶表示装置及び液晶プロジェクタ装置 |
TW494382B (en) | 2000-03-22 | 2002-07-11 | Toshiba Corp | Display apparatus and driving method of display apparatus |
JP4537526B2 (ja) | 2000-03-22 | 2010-09-01 | 東芝モバイルディスプレイ株式会社 | 液晶表示装置及びその駆動方法 |
JP3809573B2 (ja) | 2000-06-09 | 2006-08-16 | 株式会社日立製作所 | 表示装置 |
GB0014961D0 (en) | 2000-06-20 | 2000-08-09 | Koninkl Philips Electronics Nv | Light-emitting matrix array display devices with light sensing elements |
US6992652B2 (en) | 2000-08-08 | 2006-01-31 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device and driving method thereof |
JP3988368B2 (ja) * | 2000-08-24 | 2007-10-10 | カシオ計算機株式会社 | Tftパネルの製造方法 |
JP4089858B2 (ja) | 2000-09-01 | 2008-05-28 | 国立大学法人東北大学 | 半導体デバイス |
TW594329B (en) | 2000-09-18 | 2004-06-21 | Sanyo Electric Co | Active matrix type display device |
US7184014B2 (en) * | 2000-10-05 | 2007-02-27 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device |
JP4678933B2 (ja) | 2000-11-07 | 2011-04-27 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
KR20020038482A (ko) | 2000-11-15 | 2002-05-23 | 모리시타 요이찌 | 박막 트랜지스터 어레이, 그 제조방법 및 그것을 이용한표시패널 |
JP4552069B2 (ja) | 2001-01-04 | 2010-09-29 | 株式会社日立製作所 | 画像表示装置およびその駆動方法 |
JP3997731B2 (ja) | 2001-03-19 | 2007-10-24 | 富士ゼロックス株式会社 | 基材上に結晶性半導体薄膜を形成する方法 |
JP2002289859A (ja) | 2001-03-23 | 2002-10-04 | Minolta Co Ltd | 薄膜トランジスタ |
TWI242085B (en) | 2001-03-29 | 2005-10-21 | Sanyo Electric Co | Display device |
JP4204204B2 (ja) | 2001-04-13 | 2009-01-07 | 三洋電機株式会社 | アクティブマトリクス型表示装置 |
JP2002311911A (ja) | 2001-04-13 | 2002-10-25 | Sanyo Electric Co Ltd | アクティブマトリクス型表示装置 |
TWI236558B (en) | 2001-04-13 | 2005-07-21 | Sanyo Electric Co | Active matrix type display device |
US7009590B2 (en) | 2001-05-15 | 2006-03-07 | Sharp Kabushiki Kaisha | Display apparatus and display method |
JP4472216B2 (ja) * | 2001-08-01 | 2010-06-02 | Nec液晶テクノロジー株式会社 | アクティブマトリクス基板の製造方法 |
JP2003076343A (ja) | 2001-09-05 | 2003-03-14 | Toshiba Corp | 液晶表示装置及びその駆動方法 |
JP4090716B2 (ja) | 2001-09-10 | 2008-05-28 | 雅司 川崎 | 薄膜トランジスタおよびマトリクス表示装置 |
JP3925839B2 (ja) | 2001-09-10 | 2007-06-06 | シャープ株式会社 | 半導体記憶装置およびその試験方法 |
JP4361104B2 (ja) * | 2001-09-18 | 2009-11-11 | シャープ株式会社 | 液晶表示装置 |
JP4111785B2 (ja) | 2001-09-18 | 2008-07-02 | シャープ株式会社 | 液晶表示装置 |
JP4798907B2 (ja) | 2001-09-26 | 2011-10-19 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP3603832B2 (ja) | 2001-10-19 | 2004-12-22 | ソニー株式会社 | 液晶表示装置およびこれを用いた携帯端末装置 |
JP4164562B2 (ja) | 2002-09-11 | 2008-10-15 | 独立行政法人科学技術振興機構 | ホモロガス薄膜を活性層として用いる透明薄膜電界効果型トランジスタ |
EP1443130B1 (en) | 2001-11-05 | 2011-09-28 | Japan Science and Technology Agency | Natural superlattice homologous single crystal thin film, method for preparation thereof, and device using said single crystal thin film |
GB0128419D0 (en) | 2001-11-28 | 2002-01-16 | Koninkl Philips Electronics Nv | Electroluminescent display device |
US7054041B2 (en) | 2001-12-06 | 2006-05-30 | General Motors Corporation | Image sensor method and apparatus having addressable pixels and non-destructive readout |
JP4091301B2 (ja) | 2001-12-28 | 2008-05-28 | 富士通株式会社 | 半導体集積回路および半導体メモリ |
JP4083486B2 (ja) | 2002-02-21 | 2008-04-30 | 独立行政法人科学技術振興機構 | LnCuO(S,Se,Te)単結晶薄膜の製造方法 |
JP4209619B2 (ja) | 2002-02-28 | 2009-01-14 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
JP3980910B2 (ja) | 2002-03-12 | 2007-09-26 | 東芝松下ディスプレイテクノロジー株式会社 | 液晶表示装置 |
US7049190B2 (en) | 2002-03-15 | 2006-05-23 | Sanyo Electric Co., Ltd. | Method for forming ZnO film, method for forming ZnO semiconductor layer, method for fabricating semiconductor device, and semiconductor device |
JP3933591B2 (ja) | 2002-03-26 | 2007-06-20 | 淳二 城戸 | 有機エレクトロルミネッセント素子 |
US7339187B2 (en) | 2002-05-21 | 2008-03-04 | State Of Oregon Acting By And Through The Oregon State Board Of Higher Education On Behalf Of Oregon State University | Transistor structures |
JP2004022625A (ja) | 2002-06-13 | 2004-01-22 | Murata Mfg Co Ltd | 半導体デバイス及び該半導体デバイスの製造方法 |
JP4114409B2 (ja) | 2002-06-13 | 2008-07-09 | カシオ計算機株式会社 | 表示装置 |
US7105868B2 (en) | 2002-06-24 | 2006-09-12 | Cermet, Inc. | High-electron mobility transistor with zinc oxide |
US7067843B2 (en) | 2002-10-11 | 2006-06-27 | E. I. Du Pont De Nemours And Company | Transparent oxide semiconductor thin film transistors |
JP4166105B2 (ja) | 2003-03-06 | 2008-10-15 | シャープ株式会社 | 半導体装置およびその製造方法 |
JP2004273732A (ja) | 2003-03-07 | 2004-09-30 | Sharp Corp | アクティブマトリクス基板およびその製造方法 |
JP4370806B2 (ja) | 2003-05-15 | 2009-11-25 | カシオ計算機株式会社 | 薄膜トランジスタパネルおよびその製造方法 |
JP2004363300A (ja) | 2003-06-04 | 2004-12-24 | Sharp Corp | 液晶表示装置 |
JP4108633B2 (ja) | 2003-06-20 | 2008-06-25 | シャープ株式会社 | 薄膜トランジスタおよびその製造方法ならびに電子デバイス |
US7262463B2 (en) | 2003-07-25 | 2007-08-28 | Hewlett-Packard Development Company, L.P. | Transistor including a deposited channel region having a doped portion |
CN100407031C (zh) | 2004-01-05 | 2008-07-30 | 统宝香港控股有限公司 | 具有esd保护电路的液晶显示装置及其制造方法 |
US7282782B2 (en) | 2004-03-12 | 2007-10-16 | Hewlett-Packard Development Company, L.P. | Combined binary oxide semiconductor device |
US7145174B2 (en) | 2004-03-12 | 2006-12-05 | Hewlett-Packard Development Company, Lp. | Semiconductor device |
EP2246894B2 (en) | 2004-03-12 | 2018-10-10 | Japan Science and Technology Agency | Method for fabricating a thin film transistor having an amorphous oxide as a channel layer |
US7297977B2 (en) | 2004-03-12 | 2007-11-20 | Hewlett-Packard Development Company, L.P. | Semiconductor device |
JP2005300579A (ja) | 2004-04-06 | 2005-10-27 | Sony Corp | 表示装置および表示装置におけるレイアウト方法 |
US7211825B2 (en) | 2004-06-14 | 2007-05-01 | Yi-Chi Shih | Indium oxide-based thin film transistors and circuits |
JP2006100760A (ja) | 2004-09-02 | 2006-04-13 | Casio Comput Co Ltd | 薄膜トランジスタおよびその製造方法 |
US7285501B2 (en) | 2004-09-17 | 2007-10-23 | Hewlett-Packard Development Company, L.P. | Method of forming a solution processed device |
US7298084B2 (en) | 2004-11-02 | 2007-11-20 | 3M Innovative Properties Company | Methods and displays utilizing integrated zinc oxide row and column drivers in conjunction with organic light emitting diodes |
KR20070085879A (ko) | 2004-11-10 | 2007-08-27 | 캐논 가부시끼가이샤 | 발광 장치 |
US7453065B2 (en) | 2004-11-10 | 2008-11-18 | Canon Kabushiki Kaisha | Sensor and image pickup device |
RU2402106C2 (ru) | 2004-11-10 | 2010-10-20 | Кэнон Кабусики Кайся | Аморфный оксид и полевой транзистор с его использованием |
US7868326B2 (en) | 2004-11-10 | 2011-01-11 | Canon Kabushiki Kaisha | Field effect transistor |
US7829444B2 (en) | 2004-11-10 | 2010-11-09 | Canon Kabushiki Kaisha | Field effect transistor manufacturing method |
US7863611B2 (en) | 2004-11-10 | 2011-01-04 | Canon Kabushiki Kaisha | Integrated circuits utilizing amorphous oxides |
US7791072B2 (en) | 2004-11-10 | 2010-09-07 | Canon Kabushiki Kaisha | Display |
EP2246836A1 (en) | 2004-12-16 | 2010-11-03 | Sharp Kabushiki Kaisha | Active Matrix Substrate, Method For Fabricating Active Matrix Substrate, Display Device, Liquid Cyrstal Display Device, And Television Device |
KR20060073374A (ko) | 2004-12-24 | 2006-06-28 | 엘지.필립스 엘시디 주식회사 | 반투과형 박막 트랜지스터 기판 및 그 제조 방법 |
US7579224B2 (en) | 2005-01-21 | 2009-08-25 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing a thin film semiconductor device |
TWI445178B (zh) | 2005-01-28 | 2014-07-11 | Semiconductor Energy Lab | 半導體裝置,電子裝置,和半導體裝置的製造方法 |
TWI412138B (zh) | 2005-01-28 | 2013-10-11 | Semiconductor Energy Lab | 半導體裝置,電子裝置,和半導體裝置的製造方法 |
US7858451B2 (en) | 2005-02-03 | 2010-12-28 | Semiconductor Energy Laboratory Co., Ltd. | Electronic device, semiconductor device and manufacturing method thereof |
US7948171B2 (en) | 2005-02-18 | 2011-05-24 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
US20060197092A1 (en) | 2005-03-03 | 2006-09-07 | Randy Hoffman | System and method for forming conductive material on a substrate |
US8681077B2 (en) | 2005-03-18 | 2014-03-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, and display device, driving method and electronic apparatus thereof |
WO2006105077A2 (en) | 2005-03-28 | 2006-10-05 | Massachusetts Institute Of Technology | Low voltage thin film transistor with high-k dielectric material |
US7645478B2 (en) | 2005-03-31 | 2010-01-12 | 3M Innovative Properties Company | Methods of making displays |
KR101112556B1 (ko) * | 2005-04-04 | 2012-03-13 | 재단법인서울대학교산학협력재단 | 표시 장치 및 그 구동 방법 |
US8300031B2 (en) | 2005-04-20 | 2012-10-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device comprising transistor having gate and drain connected through a current-voltage conversion element |
KR101136165B1 (ko) | 2005-05-31 | 2012-04-17 | 엘지디스플레이 주식회사 | 박막 트랜지스터 및 그 제조 방법 |
JP2006344849A (ja) | 2005-06-10 | 2006-12-21 | Casio Comput Co Ltd | 薄膜トランジスタ |
JP4687259B2 (ja) | 2005-06-10 | 2011-05-25 | カシオ計算機株式会社 | 液晶表示装置 |
US7691666B2 (en) | 2005-06-16 | 2010-04-06 | Eastman Kodak Company | Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby |
US7402506B2 (en) | 2005-06-16 | 2008-07-22 | Eastman Kodak Company | Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby |
US7507618B2 (en) | 2005-06-27 | 2009-03-24 | 3M Innovative Properties Company | Method for making electronic devices using metal oxide nanoparticles |
TWI429327B (zh) | 2005-06-30 | 2014-03-01 | Semiconductor Energy Lab | 半導體裝置、顯示裝置、及電子設備 |
KR100711890B1 (ko) | 2005-07-28 | 2007-04-25 | 삼성에스디아이 주식회사 | 유기 발광표시장치 및 그의 제조방법 |
JP2007059128A (ja) | 2005-08-23 | 2007-03-08 | Canon Inc | 有機el表示装置およびその製造方法 |
JP4850457B2 (ja) | 2005-09-06 | 2012-01-11 | キヤノン株式会社 | 薄膜トランジスタ及び薄膜ダイオード |
JP5116225B2 (ja) | 2005-09-06 | 2013-01-09 | キヤノン株式会社 | 酸化物半導体デバイスの製造方法 |
JP4280736B2 (ja) | 2005-09-06 | 2009-06-17 | キヤノン株式会社 | 半導体素子 |
JP2007073705A (ja) | 2005-09-06 | 2007-03-22 | Canon Inc | 酸化物半導体チャネル薄膜トランジスタおよびその製造方法 |
KR100729043B1 (ko) | 2005-09-14 | 2007-06-14 | 삼성에스디아이 주식회사 | 투명 박막 트랜지스터 및 그의 제조방법 |
EP1998375A3 (en) | 2005-09-29 | 2012-01-18 | Semiconductor Energy Laboratory Co, Ltd. | Semiconductor device having oxide semiconductor layer and manufacturing method |
JP5064747B2 (ja) * | 2005-09-29 | 2012-10-31 | 株式会社半導体エネルギー研究所 | 半導体装置、電気泳動表示装置、表示モジュール、電子機器、及び半導体装置の作製方法 |
JP2007109918A (ja) | 2005-10-14 | 2007-04-26 | Toppan Printing Co Ltd | トランジスタおよびその製造方法 |
JP2007115807A (ja) | 2005-10-19 | 2007-05-10 | Toppan Printing Co Ltd | トランジスタ |
JP5037808B2 (ja) | 2005-10-20 | 2012-10-03 | キヤノン株式会社 | アモルファス酸化物を用いた電界効果型トランジスタ、及び該トランジスタを用いた表示装置 |
JPWO2007052393A1 (ja) * | 2005-11-02 | 2009-04-30 | シャープ株式会社 | 半導体装置及びその製造方法 |
KR20090115222A (ko) | 2005-11-15 | 2009-11-04 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체장치 제조방법 |
US7745798B2 (en) | 2005-11-15 | 2010-06-29 | Fujifilm Corporation | Dual-phosphor flat panel radiation detector |
JP5121136B2 (ja) | 2005-11-28 | 2013-01-16 | 株式会社ジャパンディスプレイウェスト | 画像表示装置、電子機器、携帯機器及び画像表示方法 |
JP4492528B2 (ja) | 2005-12-02 | 2010-06-30 | カシオ計算機株式会社 | 液晶表示装置 |
KR100732849B1 (ko) | 2005-12-21 | 2007-06-27 | 삼성에스디아이 주식회사 | 유기 발광 표시장치 |
US7821613B2 (en) | 2005-12-28 | 2010-10-26 | Semiconductor Energy Laboratory Co., Ltd. | Display device and manufacturing method thereof |
JP2007199708A (ja) | 2005-12-28 | 2007-08-09 | Semiconductor Energy Lab Co Ltd | 表示装置及びその作製方法 |
TWI292281B (en) | 2005-12-29 | 2008-01-01 | Ind Tech Res Inst | Pixel structure of active organic light emitting diode and method of fabricating the same |
US7867636B2 (en) | 2006-01-11 | 2011-01-11 | Murata Manufacturing Co., Ltd. | Transparent conductive film and method for manufacturing the same |
JP4977478B2 (ja) | 2006-01-21 | 2012-07-18 | 三星電子株式会社 | ZnOフィルム及びこれを用いたTFTの製造方法 |
US8395746B2 (en) * | 2006-01-31 | 2013-03-12 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
US7576394B2 (en) | 2006-02-02 | 2009-08-18 | Kochi Industrial Promotion Center | Thin film transistor including low resistance conductive thin films and manufacturing method thereof |
US7977169B2 (en) | 2006-02-15 | 2011-07-12 | Kochi Industrial Promotion Center | Semiconductor device including active layer made of zinc oxide with controlled orientations and manufacturing method thereof |
KR20070101033A (ko) * | 2006-04-10 | 2007-10-16 | 삼성전자주식회사 | 신호 구동 소자 및 이를 포함하는 표시 장치 |
KR20070101595A (ko) | 2006-04-11 | 2007-10-17 | 삼성전자주식회사 | ZnO TFT |
KR101206033B1 (ko) | 2006-04-18 | 2012-11-28 | 삼성전자주식회사 | ZnO 반도체 박막의 제조방법 및 이를 이용한박막트랜지스터 및 그 제조방법 |
US20070252928A1 (en) | 2006-04-28 | 2007-11-01 | Toppan Printing Co., Ltd. | Structure, transmission type liquid crystal display, reflection type display and manufacturing method thereof |
JP5028033B2 (ja) | 2006-06-13 | 2012-09-19 | キヤノン株式会社 | 酸化物半導体膜のドライエッチング方法 |
KR100846974B1 (ko) | 2006-06-23 | 2008-07-17 | 베이징 보에 옵토일렉트로닉스 테크놀로지 컴퍼니 리미티드 | Tft lcd 어레이 기판 및 그 제조 방법 |
US7643512B2 (en) * | 2006-06-29 | 2010-01-05 | Provigent Ltd. | Cascaded links with adaptive coding and modulation |
JP4999400B2 (ja) | 2006-08-09 | 2012-08-15 | キヤノン株式会社 | 酸化物半導体膜のドライエッチング方法 |
JP4609797B2 (ja) | 2006-08-09 | 2011-01-12 | Nec液晶テクノロジー株式会社 | 薄膜デバイス及びその製造方法 |
JP4332545B2 (ja) | 2006-09-15 | 2009-09-16 | キヤノン株式会社 | 電界効果型トランジスタ及びその製造方法 |
JP5164357B2 (ja) | 2006-09-27 | 2013-03-21 | キヤノン株式会社 | 半導体装置及び半導体装置の製造方法 |
JP4885968B2 (ja) | 2006-09-27 | 2012-02-29 | シャープ株式会社 | アクティブマトリクス基板およびそれを備えた液晶表示装置 |
JP4274219B2 (ja) | 2006-09-27 | 2009-06-03 | セイコーエプソン株式会社 | 電子デバイス、有機エレクトロルミネッセンス装置、有機薄膜半導体装置 |
US7622371B2 (en) | 2006-10-10 | 2009-11-24 | Hewlett-Packard Development Company, L.P. | Fused nanocrystal thin film semiconductor and method |
US7772021B2 (en) | 2006-11-29 | 2010-08-10 | Samsung Electronics Co., Ltd. | Flat panel displays comprising a thin-film transistor having a semiconductive oxide in its channel and methods of fabricating the same for use in flat panel displays |
JP2008140684A (ja) | 2006-12-04 | 2008-06-19 | Toppan Printing Co Ltd | カラーelディスプレイおよびその製造方法 |
WO2008069255A1 (en) | 2006-12-05 | 2008-06-12 | Canon Kabushiki Kaisha | Method for manufacturing thin film transistor using oxide semiconductor and display apparatus |
US8143115B2 (en) | 2006-12-05 | 2012-03-27 | Canon Kabushiki Kaisha | Method for manufacturing thin film transistor using oxide semiconductor and display apparatus |
JP5305630B2 (ja) | 2006-12-05 | 2013-10-02 | キヤノン株式会社 | ボトムゲート型薄膜トランジスタの製造方法及び表示装置の製造方法 |
JP2008181109A (ja) * | 2006-12-27 | 2008-08-07 | Semiconductor Energy Lab Co Ltd | 液晶表示装置及びそれを用いた電子機器 |
KR101303578B1 (ko) | 2007-01-05 | 2013-09-09 | 삼성전자주식회사 | 박막 식각 방법 |
JP4591451B2 (ja) | 2007-01-10 | 2010-12-01 | ソニー株式会社 | 半導体装置および表示装置 |
JP5111867B2 (ja) | 2007-01-16 | 2013-01-09 | 株式会社ジャパンディスプレイイースト | 表示装置 |
TWI323513B (en) * | 2007-01-24 | 2010-04-11 | Chi Mei Optoelectronics Corp | Display panel and method for manufacturing thin film transistor substrate thereof |
JP4408903B2 (ja) * | 2007-01-24 | 2010-02-03 | セイコーエプソン株式会社 | トランジスタ、トランジスタ回路、電気光学装置および電子機器 |
US8207063B2 (en) | 2007-01-26 | 2012-06-26 | Eastman Kodak Company | Process for atomic layer deposition |
JP2008197583A (ja) | 2007-02-15 | 2008-08-28 | Sharp Corp | 表示パネルおよび表示装置ならびに表示パネルの製造方法 |
KR100851215B1 (ko) | 2007-03-14 | 2008-08-07 | 삼성에스디아이 주식회사 | 박막 트랜지스터 및 이를 이용한 유기 전계 발광표시장치 |
JP5244331B2 (ja) | 2007-03-26 | 2013-07-24 | 出光興産株式会社 | 非晶質酸化物半導体薄膜、その製造方法、薄膜トランジスタの製造方法、電界効果型トランジスタ、発光装置、表示装置及びスパッタリングターゲット |
US7795613B2 (en) | 2007-04-17 | 2010-09-14 | Toppan Printing Co., Ltd. | Structure with transistor |
KR101325053B1 (ko) | 2007-04-18 | 2013-11-05 | 삼성디스플레이 주식회사 | 박막 트랜지스터 기판 및 이의 제조 방법 |
KR20080094300A (ko) | 2007-04-19 | 2008-10-23 | 삼성전자주식회사 | 박막 트랜지스터 및 그 제조 방법과 박막 트랜지스터를포함하는 평판 디스플레이 |
KR101334181B1 (ko) | 2007-04-20 | 2013-11-28 | 삼성전자주식회사 | 선택적으로 결정화된 채널층을 갖는 박막 트랜지스터 및 그제조 방법 |
CN101663762B (zh) | 2007-04-25 | 2011-09-21 | 佳能株式会社 | 氧氮化物半导体 |
JP5261979B2 (ja) | 2007-05-16 | 2013-08-14 | 凸版印刷株式会社 | 画像表示装置 |
JP5542297B2 (ja) | 2007-05-17 | 2014-07-09 | 株式会社半導体エネルギー研究所 | 液晶表示装置、表示モジュール及び電子機器 |
KR101345376B1 (ko) | 2007-05-29 | 2013-12-24 | 삼성전자주식회사 | ZnO 계 박막 트랜지스터 및 그 제조방법 |
JP5406449B2 (ja) * | 2007-05-30 | 2014-02-05 | キヤノン株式会社 | 酸化物半導体を用いた薄膜トランジスタの製造方法および表示装置 |
US8354674B2 (en) | 2007-06-29 | 2013-01-15 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device wherein a property of a first semiconductor layer is different from a property of a second semiconductor layer |
JP4994975B2 (ja) * | 2007-07-03 | 2012-08-08 | 臼井国際産業株式会社 | 軸流ファン |
KR101446251B1 (ko) | 2007-08-07 | 2014-10-01 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치, 이 표시 장치를 구비한 전자기기 및 그 제조 방법 |
JP2009047967A (ja) | 2007-08-21 | 2009-03-05 | Seiko Epson Corp | 電気光学装置及び電子機器 |
US7982250B2 (en) | 2007-09-21 | 2011-07-19 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
JP2009080199A (ja) * | 2007-09-25 | 2009-04-16 | Toshiba Corp | 表示装置およびその駆動方法 |
JP5354999B2 (ja) * | 2007-09-26 | 2013-11-27 | キヤノン株式会社 | 電界効果型トランジスタの製造方法 |
US7940343B2 (en) | 2007-10-15 | 2011-05-10 | Sony Corporation | Liquid crystal display device and image displaying method of liquid crystal display device |
JP5106977B2 (ja) | 2007-10-15 | 2012-12-26 | 株式会社ジャパンディスプレイウェスト | 液晶表示装置 |
JP4524699B2 (ja) | 2007-10-17 | 2010-08-18 | ソニー株式会社 | 表示装置 |
CN101821797A (zh) | 2007-10-19 | 2010-09-01 | 株式会社半导体能源研究所 | 显示器件及其驱动方法 |
JP2009122253A (ja) | 2007-11-13 | 2009-06-04 | Seiko Epson Corp | 電気光学装置及び電子機器 |
JP5213422B2 (ja) | 2007-12-04 | 2013-06-19 | キヤノン株式会社 | 絶縁層を有する酸化物半導体素子およびそれを用いた表示装置 |
TWI408812B (zh) * | 2007-12-10 | 2013-09-11 | Au Optronics Corp | 畫素結構的製作方法 |
US8202365B2 (en) | 2007-12-17 | 2012-06-19 | Fujifilm Corporation | Process for producing oriented inorganic crystalline film, and semiconductor device using the oriented inorganic crystalline film |
KR100936874B1 (ko) * | 2007-12-18 | 2010-01-14 | 삼성모바일디스플레이주식회사 | 박막 트랜지스터의 제조 방법 및 박막 트랜지스터를구비하는 유기전계발광 표시 장치의 제조 방법 |
JP5178492B2 (ja) | 2007-12-27 | 2013-04-10 | 株式会社半導体エネルギー研究所 | 表示装置および当該表示装置を具備する電子機器 |
TW200928534A (en) * | 2007-12-31 | 2009-07-01 | Innolux Display Corp | Thin film transistor and method of manufacturing the same |
KR100914929B1 (ko) | 2008-03-12 | 2009-09-01 | 한국과학기술원 | 화소회로 및 그 구동방법 |
US8487898B2 (en) * | 2008-04-25 | 2013-07-16 | Apple Inc. | Ground guard for capacitive sensing |
US9041202B2 (en) | 2008-05-16 | 2015-05-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method of the same |
JP4727702B2 (ja) * | 2008-09-11 | 2011-07-20 | 株式会社 日立ディスプレイズ | 液晶表示装置、及びその製造方法 |
JP4623179B2 (ja) | 2008-09-18 | 2011-02-02 | ソニー株式会社 | 薄膜トランジスタおよびその製造方法 |
JP5451280B2 (ja) | 2008-10-09 | 2014-03-26 | キヤノン株式会社 | ウルツ鉱型結晶成長用基板およびその製造方法ならびに半導体装置 |
JP5491833B2 (ja) * | 2008-12-05 | 2014-05-14 | 株式会社半導体エネルギー研究所 | 半導体装置 |
WO2011010542A1 (en) | 2009-07-23 | 2011-01-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
-
2010
- 2010-08-26 KR KR1020100082763A patent/KR101746198B1/ko active IP Right Grant
- 2010-08-31 US US12/872,861 patent/US9257082B2/en not_active Expired - Fee Related
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- 2010-09-02 TW TW111131346A patent/TWI803414B/zh active
- 2010-09-02 TW TW107120809A patent/TW201901647A/zh unknown
- 2010-09-02 TW TW105101715A patent/TWI541792B/zh active
- 2010-09-02 TW TW099129686A patent/TWI529688B/zh not_active IP Right Cessation
- 2010-09-02 TW TW110110682A patent/TWI764644B/zh active
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- 2010-09-02 TW TW105112626A patent/TWI605441B/zh active
- 2010-09-02 TW TW109129921A patent/TWI726805B/zh active
- 2010-09-03 CN CN2010102739170A patent/CN102013228A/zh active Pending
- 2010-09-03 CN CN201610156289.5A patent/CN105590611B/zh active Active
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- 2013-02-07 JP JP2013022235A patent/JP5531127B2/ja active Active
- 2013-05-30 JP JP2013114088A patent/JP5600771B2/ja active Active
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- 2016-01-07 JP JP2016001508A patent/JP6227020B2/ja active Active
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- 2017-10-10 JP JP2017196876A patent/JP6453416B2/ja active Active
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- 2021-09-30 KR KR1020210129607A patent/KR102372179B1/ko active IP Right Grant
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- 2023-09-27 KR KR1020230130664A patent/KR20230144506A/ko not_active Application Discontinuation
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58198084A (ja) * | 1982-05-14 | 1983-11-17 | セイコーインスツルメンツ株式会社 | 表示素子 |
JPH07253764A (ja) * | 1994-03-15 | 1995-10-03 | Sharp Corp | 液晶表示装置 |
JP2006165532A (ja) * | 2004-11-10 | 2006-06-22 | Canon Inc | 非晶質酸化物を利用した半導体デバイス |
JP2007298602A (ja) * | 2006-04-28 | 2007-11-15 | Toppan Printing Co Ltd | 構造体、透過型液晶表示装置、半導体回路の製造方法および透過型液晶表示装置の製造方法 |
JP2010085817A (ja) * | 2008-10-01 | 2010-04-15 | Seiko Epson Corp | 電気泳動表示装置および電子機器、電気泳動表示装置の駆動方法 |
Cited By (97)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
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US9142573B1 (en) | 2010-05-24 | 2015-09-22 | Sharp Kabushiki Kaisha | Thin film transistor substrate and method for producing same |
WO2011148537A1 (ja) * | 2010-05-24 | 2011-12-01 | シャープ株式会社 | 薄膜トランジスタ基板及びその製造方法 |
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KR102358423B1 (ko) | 2013-12-27 | 2022-02-08 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 |
KR20220019840A (ko) * | 2013-12-27 | 2022-02-17 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
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KR20190119680A (ko) * | 2013-12-27 | 2019-10-22 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
US10818795B2 (en) | 2013-12-27 | 2020-10-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
KR102433044B1 (ko) | 2013-12-27 | 2022-08-18 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
JP2015191038A (ja) * | 2014-03-27 | 2015-11-02 | ソニー株式会社 | 表示装置、電子機器および基板 |
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JP2021082823A (ja) * | 2014-12-02 | 2021-05-27 | 株式会社半導体エネルギー研究所 | 表示装置 |
JP2016157856A (ja) * | 2015-02-25 | 2016-09-01 | エルジー ディスプレイ カンパニー リミテッド | シリコン系薄膜半導体装置、およびシリコン系薄膜半導体装置の製造方法 |
JP2016177284A (ja) * | 2015-03-19 | 2016-10-06 | 株式会社半導体エネルギー研究所 | 液晶表示装置及び該液晶表示装置を用いた電子機器 |
US11954276B2 (en) | 2015-04-13 | 2024-04-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and touch panel |
JP2016201539A (ja) * | 2015-04-13 | 2016-12-01 | 株式会社半導体エネルギー研究所 | 半導体装置およびタッチパネル |
US11036324B2 (en) | 2015-04-13 | 2021-06-15 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and touch panel |
JP2017054899A (ja) * | 2015-09-09 | 2017-03-16 | 株式会社半導体エネルギー研究所 | 半導体装置、表示装置及び該表示装置を用いた電子機器 |
US9954014B2 (en) | 2015-12-28 | 2018-04-24 | Lg Display Co., Ltd. | Thin film transistor substrate and display using the same |
JP2017120893A (ja) * | 2015-12-28 | 2017-07-06 | エルジー ディスプレイ カンパニー リミテッド | 薄膜トランジスタ基板 |
JP2017212326A (ja) * | 2016-05-25 | 2017-11-30 | 凸版印刷株式会社 | 薄膜トランジスタアレイ基板、そのパターン形成方法及び画像表示装置 |
JP2018026551A (ja) * | 2016-07-27 | 2018-02-15 | 株式会社半導体エネルギー研究所 | トランジスタ、半導体装置及び電子機器 |
JP7032071B2 (ja) | 2016-07-27 | 2022-03-08 | 株式会社半導体エネルギー研究所 | トランジスタ |
JP7216855B2 (ja) | 2016-11-23 | 2023-02-01 | 株式会社半導体エネルギー研究所 | 表示装置、電子機器 |
JP2022103303A (ja) * | 2016-11-23 | 2022-07-07 | 株式会社半導体エネルギー研究所 | 表示装置、電子機器 |
US11075255B2 (en) | 2016-12-27 | 2021-07-27 | Semiconductor Energy Laboratory Co., Ltd. | Display panel, display device, input/output device, and data processing device |
WO2018159389A1 (ja) * | 2017-02-28 | 2018-09-07 | シャープ株式会社 | Tft基板、tft基板を備えた走査アンテナ、およびtft基板の製造方法 |
JP7066672B2 (ja) | 2019-12-19 | 2022-05-13 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP2020074406A (ja) * | 2019-12-19 | 2020-05-14 | 株式会社半導体エネルギー研究所 | 半導体装置 |
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