JP6630720B2 - 表示装置 - Google Patents
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- JP6630720B2 JP6630720B2 JP2017503201A JP2017503201A JP6630720B2 JP 6630720 B2 JP6630720 B2 JP 6630720B2 JP 2017503201 A JP2017503201 A JP 2017503201A JP 2017503201 A JP2017503201 A JP 2017503201A JP 6630720 B2 JP6630720 B2 JP 6630720B2
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- Prior art keywords
- transistor
- film
- electrode
- electrically connected
- insulating film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
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Landscapes
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Description
第1のモードが選択された場合は、視覚刺激が低減されるように、次に表示する画像情報を以下の方法を用いて表示する。
第2のモードが選択された場合は、以下の方法を用いて画像情報を表示する。例えば、画素回路に設けられた第1の機能を抑制するように、反転駆動を行わない駆動方式を設定する。または、画素回路の一部をバイパスする信号経路を用いて表示を行う。
図38および図39を参照しながら、側抑制の影響を避ける表示方法について説明する。
刺激を受けた視神経の神経単位は、隣接する他の神経単位の活動を抑制する能力を備える。これにより、パルス状の視覚刺激に対する応答が変形する場合がある。
図40および図41を参照しながら、本発明の一態様を、本発明の一態様のプログラムを用いて説明する。
様々な命令に様々なイベントを関連付けることができる。
画像情報を表示する位置を、さまざまな速度で移動するスクロール命令の例を、図42を参照しながら説明する。なお、例えば、タッチパネルをスワイプする速度を用いて、スクロール命令の表示位置を移動する速度などを与えることができる。
時刻T1から時刻T2にかけて、画像情報を表示する位置を移動する速度を、0からV1まで加速するスクロール命令の例を説明する(図42(A−1)および図42(A−2)参照)。
時刻T3から時刻T4にかけて、画像情報を表示する位置を移動する速度を、V1から0まで減速するスクロール命令の例を説明する(図42(B−1)および図42(B−2)参照)。
時刻T6から時刻T7にかけて、画像情報を表示する位置を移動する速度を0からV1まで加速しながら移動し、時刻T7から時刻T8まで速度V1で移動する。また、時刻T8から時刻T9にかけて、画像情報を表示する位置を速度V1からV2まで減速しながら移動し、時刻T9以降は速度V2で移動するロール命令の例を説明する(図42(C−1)および図42(C−2)参照)。
次に表示する画像情報の特性をモードを選択する条件に用いる方法を、図43を参照しながら説明する。
例えば、次に表示する画像情報のコントラストが所定の値を超えるか否かを、第1のモードを選択する条件に用いることができる。
また、例えば、次に表示する画像情報に占める暗部の面積の割合を、モードを選択する条件に用いることができる。
本実施の形態では、本発明の一態様の表示装置について、図面を参照して説明する。本発明の一態様の表示装置は、図1(A)に示すように画素部30、回路40および回路60を有する構成とすることができる。または、図1(B)に示すように、画素部30、回路40、回路60および回路65を有する構成とすることもできる。
本実施の形態では、本発明の一態様の表示装置の具体的な構成について、図面を参照して説明する。
次に、表示装置200に含まれる画素の具体的な構成について説明する。まず、FFSモードによって駆動する表示装置200が有する複数の画素270a、270b、270cの上面図を図10に示す。
次に、表示装置200が有する、図10に示す画素とは異なる構成の複数の画素270d、270e、270fの上面図を図15に示す。
基板211の材質などに大きな制限はないが、少なくとも、後の熱処理に耐えうる程度の耐熱性を有している必要がある。例えば、ガラス基板、セラミック基板、石英基板、サファイア基板等を、基板211として用いてもよい。また、シリコンや炭化シリコンからなる単結晶半導体基板、多結晶半導体基板、シリコンゲルマニウム等の化合物半導体基板、SOI基板等を適用することも可能であり、これらの基板上に半導体素子が設けられたものを、基板211として用いてもよい。なお、基板211として、ガラス基板を用いる場合、第6世代(1500mm×1850mm)、第7世代(1870mm×2200mm)、第8世代(2200mm×2400mm)、第9世代(2400mm×2800mm)、第10世代(2950mm×3400mm)等の大面積基板を用いることで、大型の表示装置を作製することができる。また、基板211として、可撓性基板を用い、可撓性基板上に直接、トランジスタや容量素子等を形成してもよい。
トランジスタ252のゲート絶縁膜として機能する絶縁膜215、217としては、プラズマCVD(CVD:Chemical Vapor Deposition)法、スパッタリング法等により、酸化シリコン膜、酸化窒化シリコン膜、窒化酸化シリコン膜、窒化シリコン膜、酸化アルミニウム膜、酸化ハフニウム膜、酸化イットリウム膜、酸化ジルコニウム膜、酸化ガリウム膜、酸化タンタル膜、酸化マグネシウム膜、酸化ランタン膜、酸化セリウム膜および酸化ネオジム膜を一種以上含む絶縁膜を、それぞれ用いることができる。なお、絶縁膜215、217の積層構造とせずに、上述の材料から選択された単層の絶縁膜を用いてもよい。
ゲート電極として機能する導電膜213、ソース電極またはドレイン電極として機能する導電膜221a、221bに用いることのできる材料としては、アルミニウム、チタン、クロム、ニッケル、銅、イットリウム、ジルコニウム、モリブデン、銀、タンタル、またはタングステンからなる金属、またはこれを主成分とする合金を単層構造または積層構造として用いることができる。例えば、アルミニウム膜上にチタン膜を積層する二層構造、タングステン膜上にチタン膜を積層する二層構造、モリブデン膜上に銅膜を積層した二層構造、モリブデンとタングステンを含む合金膜上に銅膜を積層した二層構造、銅−マグネシウム−アルミニウム合金膜上に銅膜を積層する二層構造、チタン膜または窒化チタン膜と、そのチタン膜または窒化チタン膜上に重ねてアルミニウム膜または銅膜を積層し、さらにその上にチタン膜または窒化チタン膜を形成する三層構造、モリブデン膜または窒化モリブデン膜と、そのモリブデン膜または窒化モリブデン膜上に重ねてアルミニウム膜または銅膜を積層し、さらにその上にモリブデン膜または窒化モリブデン膜を形成する三層構造等がある。また、ソース電極またはドレイン電極として機能する導電膜221a、221bを三層構造とする場合、一層目及び三層目には、チタン、窒化チタン、モリブデン、タングステン、モリブデンとタングステンを含む合金、モリブデンとジルコニウムを含む合金、又は窒化モリブデンでなる膜を形成し、2層目には、銅、アルミニウム、金又は銀、或いは銅とマンガンの合金等の低抵抗材料でなる膜を形成することが好ましい。なお、インジウム錫酸化物、酸化タングステンを含むインジウム酸化物、酸化タングステンを含むインジウム亜鉛酸化物、酸化チタンを含むインジウム酸化物、酸化チタンを含むインジウム錫酸化物、インジウム亜鉛酸化物、酸化シリコンを添加したインジウム錫酸化物等の透光性を有する導電性材料を用いてもよい。また、導電膜213、ソース電極またはドレイン電極として機能する導電膜221a、221bに用いることのできる材料は、例えば、スパッタリング法を用いて形成することができる。
コモン電極229として機能する導電膜としては、例えば、可視光において、透光性を有する材料を用いればよい。具体的には、インジウム(In)、亜鉛(Zn)、錫(Sn)の中から選ばれた一種を含む材料を用いるとよい。また、当該導電膜としては、例えば、酸化タングステンを含むインジウム酸化物、酸化タングステンを含むインジウム亜鉛酸化物、酸化チタンを含むインジウム酸化物、酸化チタンを含むインジウム錫酸化物、インジウム錫酸化物(ITO:Indium Tin Oxide)、インジウム亜鉛酸化物、酸化ケイ素を添加したインジウム錫酸化物などの透光性を有する導電性材料を用いることができる。また、当該導電膜としては、例えば、スパッタリング法を用いて形成することができる。
半導体膜219及び導電膜220に用いることのできる酸化物半導体膜は、膜中の酸素欠損及び/又は膜中の水素、水等の不純物濃度によって、抵抗率を制御することができる半導体材料である。そのため、半導体膜219及び導電膜220へ酸素欠損及び/又は不純物濃度が増加する処理、または酸素欠損及び/又は不純物濃度が低減する処理を選択することによって、それぞれの酸化物半導体膜の抵抗率を制御することができる。
トランジスタ252の保護絶縁膜として機能する絶縁膜223、225、227としては、プラズマCVD法、スパッタリング法等により、酸化シリコン膜、酸化窒化シリコン膜、窒化酸化シリコン膜、窒化シリコン膜、酸化アルミニウム膜、酸化ハフニウム膜、酸化イットリウム膜、酸化ジルコニウム膜、酸化ガリウム膜、酸化タンタル膜、酸化マグネシウム膜、酸化ランタン膜、酸化セリウム膜および酸化ネオジム膜を一種以上含む絶縁膜を、それぞれ用いることができる。
本実施の形態では、上記実施の形態で例示した表示システムに適用可能な表示装置の他の構成例について説明する。
本実施の形態では、本発明の一態様の入力装置、または入出力装置の駆動方法の例について、図面を参照して説明する。
図29(A)は、相互容量方式のタッチセンサの構成を示すブロック図である。図29(A)では、パルス電圧出力回路601、電流検出回路602を示している。なお図29(A)では、パルス電圧が与えられる電極621、電流の変化を検知する電極622をそれぞれ、X1−X6、Y1−Y6のそれぞれ6本の配線として示している。また図29(A)は、電極621および電極622が重畳することで形成される容量603を図示している。なお、電極621と電極622とはその機能を互いに置き換えてもよい。
上記では、タッチセンサを構成する電極を、表示素子等が設けられる基板とは異なる基板上に形成した場合を示したが、表示素子等が設けられる基板上に、タッチセンサを構成する一対の電極のいずれか一方、または両方を設ける構成としてもよい。
本実施の形態では、本発明の一態様の表示装置を有する表示モジュール及び電子機器について、図33及び図34を用いて説明を行う。
スクロールの速度が遅い場合、スクロールの速度が速い場合に比べて、同じ期間に生じる輝度の変化が少なく、視覚刺激が抑制されることが分かった(図35(A)、図35(C)、図36(A)および図36(C)参照)。
40 回路
50 画素回路
60 回路
65 回路
70 液晶素子
81 容量素子
90 画素回路
91 画素回路
92 画素回路
93 画素回路
94 画素回路
95 画素回路
100 直径
200 表示装置
211 基板
213 導電膜
215 絶縁膜
217 絶縁膜
219 半導体膜
219a 半導体膜
220 導電膜
221a 導電膜
221b 導電膜
223 絶縁膜
225 絶縁膜
227 絶縁膜
228 絶縁膜
229 コモン電極
243 導電膜
245 絶縁膜
247 導電膜
250 液晶層
251 基板
252 トランジスタ
255 容量素子
258 抵抗素子
261 遮光膜
262 着色膜
270 画素
270a 画素
270b 画素
270c 画素
270d 画素
270e 画素
270f 画素
271 画素部
274 走査線駆動回路
275 コモン線
276 信号線駆動回路
277 走査線
279 信号線
300 表示装置
301 基板
302 表示部
303 信号線駆動回路
304 走査線駆動回路
305 外部接続端子
311 トランジスタ
312 トランジスタ
314 液晶素子
321 基板
327 カラーフィルタ
328 遮光層
332 絶縁層
333 ゲート電極
334 絶縁層
335 半導体層
336 電極
338 絶縁層
339 絶縁層
341 絶縁層
342 絶縁層
343 電極
352 電極
353 液晶
510 トランジスタ
520 トランジスタ
530 トランジスタ
550 容量素子
560 容量素子
570 液晶素子
580 抵抗素子
601 パルス電圧出力回路
602 電流検出回路
603 容量
610 信号線
611 トランジスタ
612 トランジスタ
613 トランジスタ
620 走査線
621 電極
622 電極
630 走査線
640 配線
650 配線
660 配線
670 配線
810 基板
830 半導体層
831 抵抗層
840 導電層
850 導電層
855 導電層
860 絶縁層
870 保護膜
875 導電層
880 保護膜
920 走査線
3501 配線
3502 配線
3503 トランジスタ
3504 液晶素子
3510 配線
3510_1 配線
3510_2 配線
3511 配線
3515_1 ブロック
3515_2 ブロック
3516 ブロック
5000 筐体
5001 表示部
5002 表示部
5003 スピーカ
5004 LEDランプ
5005 操作キー
5006 接続端子
5007 センサ
5008 マイクロフォン
5009 スイッチ
5010 赤外線ポート
5011 記録媒体読込部
5012 支持部
5013 イヤホン
5014 アンテナ
5015 シャッターボタン
5016 受像部
5017 充電器
8000 表示モジュール
8001 上部カバー
8002 下部カバー
8003 FPC
8004 タッチパネル
8005 FPC
8006 表示パネル
8007 バックライト
8008 光源
8009 フレーム
8010 プリント基板
8011 バッテリ
Claims (7)
- トランジスタと、抵抗素子と、第1の容量素子と、第2の容量素子と、液晶素子と、を有する表示装置であって、
前記トランジスタのソースまたはドレインの一方は、前記抵抗素子の一方の電極と電気的に接続され、
前記トランジスタのソースまたはドレインの一方は、前記第1の容量素子の一方の電極と電気的に接続され、
前記抵抗素子の他方の電極は、画像信号を供給する機能を有する配線と電気的に接続され、
前記トランジスタのソースまたはドレインの他方は、前記液晶素子の一方の電極と電気的に接続され、
前記トランジスタのソースまたはドレインの他方は、前記第2の容量素子の一方の電極と電気的に接続され、
前記トランジスタのゲートは、走査線に電気的に接続される表示装置。 - 請求項1において、
前記トランジスタは、チャネルが形成される領域に酸化物半導体を有する表示装置。 - 第1のトランジスタと、第2のトランジスタと、抵抗素子と、第1の容量素子と、第2の容量素子と、液晶素子と、を有する表示装置であって、
前記第1のトランジスタのソースまたはドレインの一方は、前記抵抗素子の一方の電極と電気的に接続され、
前記第1のトランジスタのソースまたはドレインの一方は、前記第1の容量素子の一方の電極と電気的に接続され、
前記抵抗素子の他方の電極は、画像信号を供給する機能を有する配線と電気的に接続され、
前記第1のトランジスタのソースまたはドレインの他方は、前記液晶素子の一方の電極と電気的に接続され、
前記第1のトランジスタのソースまたはドレインの他方は、前記第2の容量素子の一方の電極と電気的に接続され、
前記第1のトランジスタのゲートは、第1の走査線に電気的に接続され、
前記第2のトランジスタのソースまたはドレインの一方は、前記抵抗素子の他方の電極と電気的に接続され、
前記第2のトランジスタのソースまたはドレインの他方は、前記第1のトランジスタのソースまたはドレインの他方と電気的に接続され、
前記第2のトランジスタのゲートは、第2の走査線に電気的に接続される表示装置。 - 第1のトランジスタと、第2のトランジスタと、抵抗素子と、第1の容量素子と、第2の容量素子と、液晶素子と、を有する表示装置であって、
前記第1のトランジスタのソースまたはドレインの一方は、画像信号を供給する機能を有する配線に電気的に接続され、
前記第1のトランジスタのソースまたはドレインの他方は、前記第1の容量素子の一方の電極と電気的に接続され、
前記第1のトランジスタのソースまたはドレインの他方は、前記抵抗素子の一方の電極と電気的に接続され、
前記抵抗素子の他方の電極は、前記第2の容量素子の一方の電極と電気的に接続され、
前記抵抗素子の他方の電極は、前記液晶素子の一方の電極と電気的に接続され、
前記第1のトランジスタのゲートは、第1の走査線と電気的に接続され、
前記第2のトランジスタのソースまたはドレインの一方は、前記抵抗素子の一方の電極と電気的に接続され、
前記第2のトランジスタのソースまたはドレインの他方は、前記抵抗素子の他方の電極と電気的に接続され、
前記第2のトランジスタのゲートは、第2の走査線と電気的に接続される表示装置。 - 請求項3または4において、
前記第1のトランジスタおよび前記第2のトランジスタは、チャネルが形成される領域に酸化物半導体を有する表示装置。 - 請求項3または4において、
前記抵抗素子の抵抗層は、酸化物である表示装置。 - 請求項3または4において、
前記液晶素子にて表示される画像を第1の速度以上でスクロールしたときには、前記第2のトランジスタを介さずに前記液晶素子に画像信号が供給され、
前記液晶素子にて表示される画像を前記第1の速度より小さい第2の速度でスクロールしたときには、前記第2のトランジスタを介して前記液晶素子に画像信号が供給される表示装置。
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US10483285B2 (en) * | 2016-06-01 | 2019-11-19 | Innolux Corporation | Element substrate and display device |
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JPWO2016139549A1 (ja) | 2018-01-11 |
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