JP2007506279A5 - - Google Patents

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Publication number
JP2007506279A5
JP2007506279A5 JP2006526964A JP2006526964A JP2007506279A5 JP 2007506279 A5 JP2007506279 A5 JP 2007506279A5 JP 2006526964 A JP2006526964 A JP 2006526964A JP 2006526964 A JP2006526964 A JP 2006526964A JP 2007506279 A5 JP2007506279 A5 JP 2007506279A5
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JP
Japan
Prior art keywords
coating material
forming cavity
block support
semiconductor devices
mold
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JP2006526964A
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English (en)
Japanese (ja)
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JP5431646B2 (ja
JP2007506279A (ja
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Priority claimed from US10/666,399 external-priority patent/US7915085B2/en
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Publication of JP2007506279A publication Critical patent/JP2007506279A/ja
Publication of JP2007506279A5 publication Critical patent/JP2007506279A5/ja
Application granted granted Critical
Publication of JP5431646B2 publication Critical patent/JP5431646B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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JP2006526964A 2003-09-18 2004-09-13 成形チップの製造方法および装置 Expired - Lifetime JP5431646B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/666,399 2003-09-18
US10/666,399 US7915085B2 (en) 2003-09-18 2003-09-18 Molded chip fabrication method
PCT/US2004/029916 WO2005029580A2 (en) 2003-09-18 2004-09-13 Connector

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP2012026327A Division JP6058894B2 (ja) 2003-09-18 2012-02-09 成形チップの製造方法および装置
JP2012026326A Division JP2012138587A (ja) 2003-09-18 2012-02-09 成形チップの製造方法および装置

Publications (3)

Publication Number Publication Date
JP2007506279A JP2007506279A (ja) 2007-03-15
JP2007506279A5 true JP2007506279A5 (https=) 2007-11-08
JP5431646B2 JP5431646B2 (ja) 2014-03-05

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JP2006526964A Expired - Lifetime JP5431646B2 (ja) 2003-09-18 2004-09-13 成形チップの製造方法および装置
JP2012026326A Pending JP2012138587A (ja) 2003-09-18 2012-02-09 成形チップの製造方法および装置
JP2012026327A Expired - Lifetime JP6058894B2 (ja) 2003-09-18 2012-02-09 成形チップの製造方法および装置

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JP2012026326A Pending JP2012138587A (ja) 2003-09-18 2012-02-09 成形チップの製造方法および装置
JP2012026327A Expired - Lifetime JP6058894B2 (ja) 2003-09-18 2012-02-09 成形チップの製造方法および装置

Country Status (5)

Country Link
US (6) US7915085B2 (https=)
EP (2) EP3667708A1 (https=)
JP (3) JP5431646B2 (https=)
TW (1) TWI358837B (https=)
WO (1) WO2005029580A2 (https=)

Families Citing this family (60)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7915085B2 (en) 2003-09-18 2011-03-29 Cree, Inc. Molded chip fabrication method
TWI275189B (en) * 2003-12-30 2007-03-01 Osram Opto Semiconductors Gmbh Radiation-emitting and/or radiation-receiving semiconductor component and method for producing such component
US7355284B2 (en) 2004-03-29 2008-04-08 Cree, Inc. Semiconductor light emitting devices including flexible film having therein an optical element
US7553683B2 (en) * 2004-06-09 2009-06-30 Philips Lumiled Lighting Co., Llc Method of forming pre-fabricated wavelength converting elements for semiconductor light emitting devices
US8563339B2 (en) * 2005-08-25 2013-10-22 Cree, Inc. System for and method for closed loop electrophoretic deposition of phosphor materials on semiconductor devices
US20070045643A1 (en) * 2005-08-29 2007-03-01 Shih-Lung Liu Substrate-based white light diode
JP5308618B2 (ja) * 2006-04-26 2013-10-09 日亜化学工業株式会社 半導体発光装置
CN100472828C (zh) * 2006-04-28 2009-03-25 佰鸿工业股份有限公司 白光发光二极管的制作方法
DE202006007482U1 (de) * 2006-05-10 2006-07-20 Sentner, Thomas Leuchtmöbel
EP2027602A4 (en) * 2006-05-23 2012-11-28 Cree Inc LIGHTING DEVICE AND METHOD OF MAKING
CN101174058A (zh) * 2006-10-30 2008-05-07 鸿富锦精密工业(深圳)有限公司 背光模组及其制备方法
US7521862B2 (en) * 2006-11-20 2009-04-21 Philips Lumileds Lighting Co., Llc Light emitting device including luminescent ceramic and light-scattering material
US9024349B2 (en) 2007-01-22 2015-05-05 Cree, Inc. Wafer level phosphor coating method and devices fabricated utilizing method
US9159888B2 (en) * 2007-01-22 2015-10-13 Cree, Inc. Wafer level phosphor coating method and devices fabricated utilizing method
JP5431320B2 (ja) * 2007-07-17 2014-03-05 クリー インコーポレイテッド 内部光学機能を備えた光学素子およびその製造方法
KR101524012B1 (ko) * 2007-12-11 2015-05-29 코닌클리케 필립스 엔.브이. 하이브리드 상부 반사기를 갖는 측면 발광 장치
US9041285B2 (en) 2007-12-14 2015-05-26 Cree, Inc. Phosphor distribution in LED lamps using centrifugal force
US8878219B2 (en) * 2008-01-11 2014-11-04 Cree, Inc. Flip-chip phosphor coating method and devices fabricated utilizing method
DE102008010512A1 (de) * 2008-02-22 2009-08-27 Osram Opto Semiconductors Gmbh Optoelektronisches Bauteil und Verfahren zur Herstellung eines optoelektronischen Bauteils
US10147843B2 (en) 2008-07-24 2018-12-04 Lumileds Llc Semiconductor light emitting device including a window layer and a light-directing structure
US20100279437A1 (en) * 2009-05-01 2010-11-04 Koninklijke Philips Electronics N.V. Controlling edge emission in package-free led die
US8236582B2 (en) * 2008-07-24 2012-08-07 Philips Lumileds Lighting Company, Llc Controlling edge emission in package-free LED die
KR101639793B1 (ko) * 2008-09-25 2016-07-15 코닌클리케 필립스 엔.브이. 코팅된 발광 장치 및 그 코팅 방법
US8075165B2 (en) * 2008-10-14 2011-12-13 Ledengin, Inc. Total internal reflection lens and mechanical retention and locating device
US8507300B2 (en) * 2008-12-24 2013-08-13 Ledengin, Inc. Light-emitting diode with light-conversion layer
TWI381556B (zh) * 2009-03-20 2013-01-01 億光電子工業股份有限公司 發光二極體封裝結構及其製作方法
US7985000B2 (en) * 2009-04-08 2011-07-26 Ledengin, Inc. Lighting apparatus having multiple light-emitting diodes with individual light-conversion layers
DE102009035100A1 (de) * 2009-07-29 2011-02-03 Osram Opto Semiconductors Gmbh Leuchtdiode und Konversionselement für eine Leuchtdiode
TWI385782B (zh) * 2009-09-10 2013-02-11 隆達電子股份有限公司 白光發光元件
JP5468349B2 (ja) * 2009-10-22 2014-04-09 シチズンホールディングス株式会社 Led光源装置の製造方法
US8303141B2 (en) * 2009-12-17 2012-11-06 Ledengin, Inc. Total internal reflection lens with integrated lamp cover
US10546846B2 (en) 2010-07-23 2020-01-28 Cree, Inc. Light transmission control for masking appearance of solid state light sources
US8937324B2 (en) * 2010-08-30 2015-01-20 Bridgelux, Inc. Light-emitting device array with individual cells
US9373606B2 (en) 2010-08-30 2016-06-21 Bridgelux, Inc. Light-emitting device array with individual cells
US9515229B2 (en) * 2010-09-21 2016-12-06 Cree, Inc. Semiconductor light emitting devices with optical coatings and methods of making same
CN102487110A (zh) * 2010-12-03 2012-06-06 展晶科技(深圳)有限公司 发光二极管封装方法
KR101725220B1 (ko) 2010-12-22 2017-04-10 삼성전자 주식회사 형광체 도포 방법 및 형광체 도포 장치
EP2666193B1 (en) * 2011-01-17 2020-07-29 Lumileds Holding B.V. Led package comprising encapsulation
US9166126B2 (en) 2011-01-31 2015-10-20 Cree, Inc. Conformally coated light emitting devices and methods for providing the same
US8513900B2 (en) 2011-05-12 2013-08-20 Ledengin, Inc. Apparatus for tuning of emitter with multiple LEDs to a single color bin
DE102011102590A1 (de) * 2011-05-27 2012-11-29 Osram Opto Semiconductors Gmbh Verfahren zum Herstellen von Leuchtdioden-Bauelementen
SG189315A1 (en) * 2011-06-07 2013-05-31 Toray Industries Resin sheet laminated body, method for producing same, and method for producing led chip with phosphor-containing resin sheet using same
KR20130083207A (ko) * 2012-01-12 2013-07-22 삼성전자주식회사 웨이퍼 레벨 몰드를 이용한 발광소자 칩 웨이퍼의 형광층 형성방법
JP6322581B2 (ja) * 2012-01-19 2018-05-09 ナノコ テクノロジーズ リミテッド 発光用途用成形ナノ粒子蛍光体
US9343383B2 (en) * 2012-03-02 2016-05-17 Cree, Inc. High voltage semiconductor devices including electric arc suppression material and methods of forming the same
US9897284B2 (en) 2012-03-28 2018-02-20 Ledengin, Inc. LED-based MR16 replacement lamp
US8921994B2 (en) 2012-09-14 2014-12-30 Freescale Semiconductor, Inc. Thermally enhanced package with lid heat spreader
US9159643B2 (en) * 2012-09-14 2015-10-13 Freescale Semiconductor, Inc. Matrix lid heatspreader for flip chip package
KR101968637B1 (ko) * 2012-12-07 2019-04-12 삼성전자주식회사 유연성 반도체소자 및 그 제조방법
KR102860367B1 (ko) * 2014-09-19 2025-09-16 가부시키가이샤 한도오따이 에네루기 켄큐쇼 이차 전지
US9530943B2 (en) 2015-02-27 2016-12-27 Ledengin, Inc. LED emitter packages with high CRI
CN106328008B (zh) * 2015-06-30 2019-03-22 光宝光电(常州)有限公司 胶体填充至壳体的制法、发光二极管的数字显示器及制法
DE102015114849B4 (de) * 2015-09-04 2022-01-13 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung von Leuchtdiodenfilamenten und Leuchtdiodenfilament
WO2018068174A1 (zh) * 2016-10-10 2018-04-19 深圳市汇顶科技股份有限公司 一种芯片封装结构及芯片封装方法
US10219345B2 (en) 2016-11-10 2019-02-26 Ledengin, Inc. Tunable LED emitter with continuous spectrum
CN106449945B (zh) * 2016-12-07 2019-03-26 湘能华磊光电股份有限公司 制作csp芯片的模注方法
DE102017215797B4 (de) * 2017-09-07 2023-09-21 Infineon Technologies Ag Verfahren zur Herstellung von gehäusten Halbleitervorrichtungen
US10170304B1 (en) 2017-10-25 2019-01-01 Globalfoundries Inc. Self-aligned nanotube structures
KR101977261B1 (ko) * 2017-11-03 2019-05-13 엘지전자 주식회사 형광체 모듈
CN112234070B (zh) * 2019-06-27 2022-12-13 成都辰显光电有限公司 显示面板、显示装置及显示面板的制造方法

Family Cites Families (367)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US257737A (en) * 1882-05-09 Gate-holder
US468832A (en) * 1892-02-16 Corn-harvester
US333522A (en) * 1886-01-05 Feanklin e
US566639A (en) * 1896-08-25 werner
US66861A (en) * 1867-07-16 Impeoyed lasd-eqllee and marieb
US720259A (en) * 1902-07-29 1903-02-10 Christopher Kuenzel Stem winding and setting watch.
US813753A (en) * 1905-05-24 1906-02-27 Sieber & Trussell Mnfg Co Loose-leaf binder.
US959316A (en) * 1908-01-02 1910-05-24 Edmund Dawes Spinning and twisting machine.
US924233A (en) * 1908-06-16 1909-06-08 Aage Jensen Apparatus for heating and cooling liquids.
US3780357A (en) 1973-02-16 1973-12-18 Hewlett Packard Co Electroluminescent semiconductor display apparatus and method of fabricating the same
NL162469C (nl) * 1975-01-23 1980-05-16 Schelde Nv Werkwijze voor het lassen van een pijp aan een pijpplaat.
JPS5479985A (en) 1977-12-09 1979-06-26 Tokyo Shibaura Electric Co Ultrasonic scanning device
JPS5927559Y2 (ja) 1979-06-08 1984-08-09 才市 岡本 防振装置
JPS5752072A (en) * 1980-09-16 1982-03-27 Tokyo Shibaura Electric Co Display unit
US4527179A (en) * 1981-02-09 1985-07-02 Semiconductor Energy Laboratory Co., Ltd. Non-single-crystal light emitting semiconductor device
JPS5927559A (ja) 1982-08-07 1984-02-14 Mitsubishi Electric Corp 半導体装置パツケ−ジ
JPS5939124A (ja) 1982-08-27 1984-03-03 Toshiba Corp Cmos論理回路
US4587729A (en) * 1982-09-17 1986-05-13 The Gillette Company Safety razor
US4576796A (en) 1984-01-18 1986-03-18 Pelam, Inc. Centrifugal tissue processor
JPS6148951A (ja) 1984-08-16 1986-03-10 Toshiba Corp 半導体装置
US4853010A (en) * 1984-09-12 1989-08-01 Spence Billy F Multi stage gas scrubber
US4733335A (en) * 1984-12-28 1988-03-22 Koito Manufacturing Co., Ltd. Vehicular lamp
JPS6227559A (ja) 1985-07-29 1987-02-05 Hitachi Cable Ltd 溶融錫メツキ銅線の製造方法
US4866005A (en) 1987-10-26 1989-09-12 North Carolina State University Sublimation of silicon carbide to produce large, device quality single crystals of silicon carbide
US4935665A (en) * 1987-12-24 1990-06-19 Mitsubishi Cable Industries Ltd. Light emitting diode lamp
US5132045A (en) 1988-03-16 1992-07-21 Mitsubishi Rayon Co., Ltd. Acrylic phosphor paste compositions and phosphor coatings obtained therefrom
JPH0261821A (ja) 1988-08-25 1990-03-01 Victor Co Of Japan Ltd 磁気記録媒体
JP2558840B2 (ja) * 1988-09-22 1996-11-27 関西日本電気株式会社 モールドダイオードおよびその製造方法
US4918497A (en) 1988-12-14 1990-04-17 Cree Research, Inc. Blue light emitting diode formed in silicon carbide
US5027168A (en) 1988-12-14 1991-06-25 Cree Research, Inc. Blue light emitting diode formed in silicon carbide
JPH0286150U (https=) 1988-12-22 1990-07-09
US4966862A (en) 1989-08-28 1990-10-30 Cree Research, Inc. Method of production of light emitting diodes
US4946547A (en) 1989-10-13 1990-08-07 Cree Research, Inc. Method of preparing silicon carbide surfaces for crystal growth
US5210051A (en) 1990-03-27 1993-05-11 Cree Research, Inc. High efficiency light emitting diodes from bipolar gallium nitride
FR2666147B1 (fr) 1990-08-27 1992-10-16 Inst Francais Du Petrole Mesure de la repartition des concentrations de constituants d'un syteme en centrifugation par emission/reception de signaux mecaniques.
US5200022A (en) 1990-10-03 1993-04-06 Cree Research, Inc. Method of improving mechanically prepared substrate surfaces of alpha silicon carbide for deposition of beta silicon carbide thereon and resulting product
US5265792A (en) * 1992-08-20 1993-11-30 Hewlett-Packard Company Light source and technique for mounting light emitting diodes
FR2704690B1 (fr) 1993-04-27 1995-06-23 Thomson Csf Procédé d'encapsulation de pastilles semi-conductrices, dispositif obtenu par ce procédé et application à l'interconnexion de pastilles en trois dimensions.
US5414342A (en) * 1993-04-29 1995-05-09 Unitrode Corporation Voltage mode pulse width modulation controller
US5416342A (en) 1993-06-23 1995-05-16 Cree Research, Inc. Blue light-emitting diode with high external quantum efficiency
US5338944A (en) 1993-09-22 1994-08-16 Cree Research, Inc. Blue light-emitting diode with degenerate junction structure
US5393993A (en) 1993-12-13 1995-02-28 Cree Research, Inc. Buffer structure between silicon carbide and gallium nitride and resulting semiconductor devices
US5604135A (en) 1994-08-12 1997-02-18 Cree Research, Inc. Method of forming green light emitting diode in silicon carbide
US5523589A (en) 1994-09-20 1996-06-04 Cree Research, Inc. Vertical geometry light emitting diode with group III nitride active layer and extended lifetime
US5631190A (en) 1994-10-07 1997-05-20 Cree Research, Inc. Method for producing high efficiency light-emitting diodes and resulting diode structures
DE19509262C2 (de) 1995-03-15 2001-11-29 Siemens Ag Halbleiterbauelement mit Kunststoffumhüllung und Verfahren zu dessen Herstellung
US5614131A (en) * 1995-05-01 1997-03-25 Motorola, Inc. Method of making an optoelectronic device
US5739554A (en) 1995-05-08 1998-04-14 Cree Research, Inc. Double heterojunction light emitting diode with gallium nitride active layer
US6056421A (en) 1995-08-25 2000-05-02 Michael Brian Johnson Architectural lighting devices with photosensitive lens
US5766987A (en) * 1995-09-22 1998-06-16 Tessera, Inc. Microelectronic encapsulation methods and equipment
DE19536438A1 (de) * 1995-09-29 1997-04-03 Siemens Ag Halbleiterbauelement und Herstellverfahren
TW412744B (en) 1996-02-13 2000-11-21 Dainippon Printing Co Ltd Device with display portion capable of rewriting
JP2947156B2 (ja) 1996-02-29 1999-09-13 双葉電子工業株式会社 蛍光体の製造方法
US5926359A (en) * 1996-04-01 1999-07-20 International Business Machines Corporation Metal-insulator-metal capacitor
US6001671A (en) * 1996-04-18 1999-12-14 Tessera, Inc. Methods for manufacturing a semiconductor package having a sacrificial layer
JP3350354B2 (ja) 1996-06-03 2002-11-25 松下電器産業株式会社 モノクロームブラウン管蛍光面形成方法
US5803579A (en) * 1996-06-13 1998-09-08 Gentex Corporation Illuminator assembly incorporating light emitting diodes
DE19638667C2 (de) 1996-09-20 2001-05-17 Osram Opto Semiconductors Gmbh Mischfarbiges Licht abstrahlendes Halbleiterbauelement mit Lumineszenzkonversionselement
DE59713024D1 (de) 1996-06-26 2010-01-28 Osram Opto Semiconductors Gmbh Lichtabstrahlender Halbleiterchip und Lichtabstrahlendes Halbleiterbauelement und Verfahren zu dessen Herstellung
JP3751587B2 (ja) * 1996-07-12 2006-03-01 富士通株式会社 半導体装置の製造方法
TW383508B (en) 1996-07-29 2000-03-01 Nichia Kagaku Kogyo Kk Light emitting device and display
JP3065258B2 (ja) 1996-09-30 2000-07-17 日亜化学工業株式会社 発光装置及びそれを用いた表示装置
JPH10150223A (ja) * 1996-11-15 1998-06-02 Rohm Co Ltd チップ型発光素子
JP3448441B2 (ja) 1996-11-29 2003-09-22 三洋電機株式会社 発光装置
US5833903A (en) * 1996-12-10 1998-11-10 Great American Gumball Corporation Injection molding encapsulation for an electronic device directly onto a substrate
JP3492178B2 (ja) 1997-01-15 2004-02-03 株式会社東芝 半導体発光装置及びその製造方法
US6274890B1 (en) 1997-01-15 2001-08-14 Kabushiki Kaisha Toshiba Semiconductor light emitting device and its manufacturing method
WO1998034285A1 (fr) 1997-01-31 1998-08-06 Matsushita Electronics Corporation Element electroluminescent, dispositif electroluminescent a semiconducteur, et leur procede de production
US6583444B2 (en) 1997-02-18 2003-06-24 Tessera, Inc. Semiconductor packages having light-sensitive chips
JP3246386B2 (ja) 1997-03-05 2002-01-15 日亜化学工業株式会社 発光ダイオード及び発光ダイオード用の色変換モールド部材
JP3351706B2 (ja) 1997-05-14 2002-12-03 株式会社東芝 半導体装置およびその製造方法
US5813753A (en) * 1997-05-27 1998-09-29 Philips Electronics North America Corporation UV/blue led-phosphor device with efficient conversion of UV/blues light to visible light
FR2764111A1 (fr) 1997-06-03 1998-12-04 Sgs Thomson Microelectronics Procede de fabrication de boitiers semi-conducteurs comprenant un circuit integre
JP3617587B2 (ja) 1997-07-17 2005-02-09 日亜化学工業株式会社 発光ダイオード及びその形成方法
US6340824B1 (en) 1997-09-01 2002-01-22 Kabushiki Kaisha Toshiba Semiconductor light emitting device including a fluorescent material
JPH1187778A (ja) 1997-09-02 1999-03-30 Toshiba Corp 半導体発光素子、半導体発光装置およびその製造方法
CN2310925Y (zh) 1997-09-26 1999-03-17 陈兴 发光二极管的新结构
US6201262B1 (en) 1997-10-07 2001-03-13 Cree, Inc. Group III nitride photonic devices on silicon carbide substrates with conductive buffer interlay structure
US6350704B1 (en) * 1997-10-14 2002-02-26 Micron Technology Inc. Porous silicon oxycarbide integrated circuit insulator
US6495083B2 (en) 1997-10-29 2002-12-17 Hestia Technologies, Inc. Method of underfilling an integrated circuit chip
TW408497B (en) * 1997-11-25 2000-10-11 Matsushita Electric Works Ltd LED illuminating apparatus
EP0926744B8 (en) 1997-12-15 2008-05-21 Philips Lumileds Lighting Company, LLC. Light emitting device
US6580097B1 (en) 1998-02-06 2003-06-17 General Electric Company Light emitting device with phosphor composition
US6252254B1 (en) 1998-02-06 2001-06-26 General Electric Company Light emitting device with phosphor composition
JPH11276932A (ja) 1998-03-30 1999-10-12 Japan Tobacco Inc 遠心分離機
US6329224B1 (en) * 1998-04-28 2001-12-11 Tessera, Inc. Encapsulation of microelectronic assemblies
US6504180B1 (en) 1998-07-28 2003-01-07 Imec Vzw And Vrije Universiteit Method of manufacturing surface textured high-efficiency radiating devices and devices obtained therefrom
JP2000053532A (ja) * 1998-08-04 2000-02-22 Shiseido Co Ltd 美容法
US5959316A (en) * 1998-09-01 1999-09-28 Hewlett-Packard Company Multiple encapsulation of phosphor-LED devices
JP3724620B2 (ja) 1998-09-29 2005-12-07 シャープ株式会社 発光ダイオードの製造方法
US6366018B1 (en) 1998-10-21 2002-04-02 Sarnoff Corporation Apparatus for performing wavelength-conversion using phosphors with light emitting diodes
US6404125B1 (en) * 1998-10-21 2002-06-11 Sarnoff Corporation Method and apparatus for performing wavelength-conversion using phosphors with light emitting diodes
US5988925A (en) * 1998-10-26 1999-11-23 Baggett; R. Sherman Stacked paper fastener
US6184465B1 (en) * 1998-11-12 2001-02-06 Micron Technology, Inc. Semiconductor package
US6307218B1 (en) 1998-11-20 2001-10-23 Lumileds Lighting, U.S., Llc Electrode structures for light emitting devices
JP3775081B2 (ja) 1998-11-27 2006-05-17 松下電器産業株式会社 半導体発光装置
US6429583B1 (en) 1998-11-30 2002-08-06 General Electric Company Light emitting device with ba2mgsi2o7:eu2+, ba2sio4:eu2+, or (srxcay ba1-x-y)(a1zga1-z)2sr:eu2+phosphors
US6339304B1 (en) * 1998-12-18 2002-01-15 Graco Children's Products Inc. Swing control for altering power to drive motor after each swing cycle
JP2000208822A (ja) 1999-01-11 2000-07-28 Matsushita Electronics Industry Corp 半導体発光装置
JP4256968B2 (ja) 1999-01-14 2009-04-22 スタンレー電気株式会社 発光ダイオードの製造方法
JP3033576B1 (ja) 1999-02-18 2000-04-17 日本電気株式会社 半導体装置及び半導体装置の製造方法
JP4078033B2 (ja) 1999-03-26 2008-04-23 株式会社ルネサステクノロジ 半導体モジュールの実装方法
JP3494586B2 (ja) 1999-03-26 2004-02-09 アピックヤマダ株式会社 樹脂封止装置及び樹脂封止方法
US6784541B2 (en) * 2000-01-27 2004-08-31 Hitachi, Ltd. Semiconductor module and mounting method for same
US6699492B2 (en) 1999-03-31 2004-03-02 Insite Vision Incorporated Quinolone carboxylic acid compositions and related methods of treatment
JP2000299334A (ja) * 1999-04-14 2000-10-24 Apic Yamada Corp 樹脂封止装置
DE19918370B4 (de) 1999-04-22 2006-06-08 Osram Opto Semiconductors Gmbh LED-Weißlichtquelle mit Linse
US6257737B1 (en) 1999-05-20 2001-07-10 Philips Electronics Na Low-profile luminaire having a reflector for mixing light from a multi-color linear array of LEDs
JP3337000B2 (ja) 1999-06-07 2002-10-21 サンケン電気株式会社 半導体発光装置
EP1059668A3 (en) 1999-06-09 2007-07-18 Sanyo Electric Co., Ltd. Hybrid integrated circuit device
JP3675234B2 (ja) 1999-06-28 2005-07-27 豊田合成株式会社 半導体発光素子の製造方法
US6274690B1 (en) 1999-08-11 2001-08-14 Shin-Etsu Chemical Co., Ltd. Preparation of vinyl chloride polymer
JP2001064937A (ja) 1999-08-31 2001-03-13 Seni Doboku Kaihatsu Kk 土木工事用ふとんかごとこれを用いた保護工および中詰材の充填方法。
US6696703B2 (en) 1999-09-27 2004-02-24 Lumileds Lighting U.S., Llc Thin film phosphor-converted light emitting diode device
US6338813B1 (en) 1999-10-15 2002-01-15 Advanced Semiconductor Engineering, Inc. Molding method for BGA semiconductor chip package
KR20010044907A (ko) 1999-11-01 2001-06-05 김순택 저전압 구동용 고휘도 형광체막 및 그 제조 방법
DE19955747A1 (de) 1999-11-19 2001-05-23 Osram Opto Semiconductors Gmbh Optische Halbleitervorrichtung mit Mehrfach-Quantentopf-Struktur
US6410942B1 (en) * 1999-12-03 2002-06-25 Cree Lighting Company Enhanced light extraction through the use of micro-LED arrays
US6666567B1 (en) * 1999-12-28 2003-12-23 Honeywell International Inc. Methods and apparatus for a light source with a raised LED structure
US6406991B2 (en) 1999-12-27 2002-06-18 Hoya Corporation Method of manufacturing a contact element and a multi-layered wiring substrate, and wafer batch contact board
DE19963806C2 (de) * 1999-12-30 2002-02-07 Osram Opto Semiconductors Gmbh Verfahren zum Herstellen einer Leuchtdioden-Weißlichtquelle, Verwendung einer Kunststoff-Preßmasse zum Herstellen einer Leuchtioden-Weißlichtquelle und oberflächenmontierbare Leuchtdioden-Weißlichtquelle
US6541367B1 (en) * 2000-01-18 2003-04-01 Applied Materials, Inc. Very low dielectric constant plasma-enhanced CVD films
DE10010638A1 (de) 2000-03-03 2001-09-13 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines lichtabstrahlenden Halbleiterkörpers mit Lumineszenzkonversionselement
US6793371B2 (en) * 2000-03-09 2004-09-21 Mongo Light Co. Inc. LED lamp assembly
US6522065B1 (en) 2000-03-27 2003-02-18 General Electric Company Single phosphor for creating white light with high luminosity and high CRI in a UV led device
TW200529308A (en) 2000-03-31 2005-09-01 Toyoda Gosei Kk Method for dicing semiconductor wafer into chips
JP4810746B2 (ja) 2000-03-31 2011-11-09 豊田合成株式会社 Iii族窒化物系化合物半導体素子
US6653765B1 (en) 2000-04-17 2003-11-25 General Electric Company Uniform angular light distribution from LEDs
JP4403631B2 (ja) 2000-04-24 2010-01-27 ソニー株式会社 チップ状電子部品の製造方法、並びにその製造に用いる擬似ウエーハの製造方法
EP2270875B1 (de) 2000-04-26 2018-01-10 OSRAM Opto Semiconductors GmbH Strahlungsmittierendes Halbleiterbauelement und dessen Herstellungsverfahren
JP2001319928A (ja) * 2000-05-08 2001-11-16 Hitachi Ltd 半導体集積回路装置およびその製造方法
US6621211B1 (en) 2000-05-15 2003-09-16 General Electric Company White light emitting phosphor blends for LED devices
US6501100B1 (en) 2000-05-15 2002-12-31 General Electric Company White light emitting phosphor blend for LED devices
GB0013394D0 (en) * 2000-06-01 2000-07-26 Microemissive Displays Ltd A method of creating a color optoelectronic device
JP2002009097A (ja) 2000-06-22 2002-01-11 Oki Electric Ind Co Ltd 半導体装置とその製造方法
JP2002018293A (ja) 2000-07-06 2002-01-22 Nippon Steel Chem Co Ltd 陽イオン交換樹脂
DE10033502A1 (de) * 2000-07-10 2002-01-31 Osram Opto Semiconductors Gmbh Optoelektronisches Modul, Verfahren zu dessen Herstellung und dessen Verwendung
US6468832B1 (en) 2000-07-19 2002-10-22 National Semiconductor Corporation Method to encapsulate bumped integrated circuit to create chip scale package
JP3589187B2 (ja) 2000-07-31 2004-11-17 日亜化学工業株式会社 発光装置の形成方法
US20020033486A1 (en) * 2000-08-04 2002-03-21 Samsung Electronics Co., Ltd. Method for forming an interconnection line using a hydrosilsesquioxane (HSQ) layer as an interlayer insulating layer
JP2002050799A (ja) 2000-08-04 2002-02-15 Stanley Electric Co Ltd Ledランプおよびその製造方法
US20020024299A1 (en) * 2000-08-09 2002-02-28 Tadahiro Okazaki Chip-type light-emitting device
JP2002076196A (ja) * 2000-08-25 2002-03-15 Nec Kansai Ltd チップ型半導体装置及びその製造方法
US6537912B1 (en) * 2000-08-25 2003-03-25 Micron Technology Inc. Method of forming an encapsulated conductive pillar
AU8404701A (en) 2000-08-31 2002-03-13 Basf Ag Butinol I esterase
US6614103B1 (en) * 2000-09-01 2003-09-02 General Electric Company Plastic packaging of LED arrays
JP2002076445A (ja) 2000-09-01 2002-03-15 Sanken Electric Co Ltd 半導体発光装置
JP2002093830A (ja) * 2000-09-14 2002-03-29 Sony Corp チップ状電子部品の製造方法、及びその製造に用いる疑似ウェーハの製造方法
JP2002101147A (ja) 2000-09-26 2002-04-05 Hitachi Kokusai Electric Inc 通信システム
WO2002029892A2 (en) * 2000-10-03 2002-04-11 Broadcom Corporation High-density metal capacitor using dual-damascene copper interconnect
US6650044B1 (en) 2000-10-13 2003-11-18 Lumileds Lighting U.S., Llc Stenciling phosphor layers on light emitting diodes
DE10051242A1 (de) 2000-10-17 2002-04-25 Philips Corp Intellectual Pty Lichtemittierende Vorrichtung mit beschichtetem Leuchtstoff
JP2002161325A (ja) 2000-11-20 2002-06-04 Ulvac Japan Ltd アルミニウム合金、水素ガス発生方法、水素ガス発生器及び発電機
US6889088B2 (en) * 2000-11-20 2005-05-03 Bassem M. Demian Bunion treating device
US20020063520A1 (en) 2000-11-29 2002-05-30 Huei-Che Yu Pre-formed fluorescent plate - LED device
JP3614776B2 (ja) 2000-12-19 2005-01-26 シャープ株式会社 チップ部品型ledとその製造方法
JP5110744B2 (ja) * 2000-12-21 2012-12-26 フィリップス ルミレッズ ライティング カンパニー リミテッド ライアビリティ カンパニー 発光装置及びその製造方法
JP2002208822A (ja) 2000-12-28 2002-07-26 Tamura Seisakusho Co Ltd 電子回路および音響出力装置
JP2002280607A (ja) 2001-01-10 2002-09-27 Toyoda Gosei Co Ltd 発光装置
AUPR245601A0 (en) * 2001-01-10 2001-02-01 Silverbrook Research Pty Ltd An apparatus (WSM09)
US6734571B2 (en) 2001-01-23 2004-05-11 Micron Technology, Inc. Semiconductor assembly encapsulation mold
MY131962A (en) 2001-01-24 2007-09-28 Nichia Corp Light emitting diode, optical semiconductor device, epoxy resin composition suited for optical semiconductor device, and method for manufacturing the same
US6891200B2 (en) 2001-01-25 2005-05-10 Matsushita Electric Industrial Co., Ltd. Light-emitting unit, light-emitting unit assembly, and lighting apparatus produced using a plurality of light-emitting units
US6791119B2 (en) 2001-02-01 2004-09-14 Cree, Inc. Light emitting diodes including modifications for light extraction
TW516247B (en) 2001-02-26 2003-01-01 Arima Optoelectronics Corp Light emitting diode with light conversion using scattering optical media
JP4081985B2 (ja) * 2001-03-02 2008-04-30 日亜化学工業株式会社 発光装置およびその製造方法
US6661167B2 (en) 2001-03-14 2003-12-09 Gelcore Llc LED devices
US20020132471A1 (en) * 2001-03-16 2002-09-19 International Business Machines Corporation High modulus film structure for enhanced electromigration resistance
US6486059B2 (en) * 2001-04-19 2002-11-26 Silicon Intergrated Systems Corp. Dual damascene process using an oxide liner for a dielectric barrier layer
CN1220283C (zh) 2001-04-23 2005-09-21 松下电工株式会社 使用led芯片的发光装置
JP2002319704A (ja) 2001-04-23 2002-10-31 Matsushita Electric Works Ltd Ledチップ
US6686676B2 (en) 2001-04-30 2004-02-03 General Electric Company UV reflectors and UV-based light sources having reduced UV radiation leakage incorporating the same
US6531358B1 (en) * 2001-05-09 2003-03-11 Taiwan Semiconductor Manufacturing Company Method of fabricating capacitor-under-bit line (CUB) DRAM
US6861347B2 (en) * 2001-05-17 2005-03-01 Samsung Electronics Co., Ltd. Method for forming metal wiring layer of semiconductor device
US6958497B2 (en) 2001-05-30 2005-10-25 Cree, Inc. Group III nitride based light emitting diode structures with a quantum well and superlattice, group III nitride based quantum well structures and group III nitride based superlattice structures
US6642652B2 (en) 2001-06-11 2003-11-04 Lumileds Lighting U.S., Llc Phosphor-converted light emitting device
US6576488B2 (en) 2001-06-11 2003-06-10 Lumileds Lighting U.S., Llc Using electrophoresis to produce a conformally coated phosphor-converted light emitting semiconductor
EP2034530B1 (en) 2001-06-15 2015-01-21 Cree, Inc. GaN based LED formed on a SiC substrate
JP4114331B2 (ja) 2001-06-15 2008-07-09 豊田合成株式会社 発光装置
WO2003001612A1 (fr) 2001-06-20 2003-01-03 Nichia Corporation Dispositif a semi-conducteurs et procede de fabrication
JP4529319B2 (ja) 2001-06-27 2010-08-25 日亜化学工業株式会社 半導体チップとその製造方法
KR20040014969A (ko) * 2001-06-28 2004-02-18 도레이 가부시끼가이샤 내후성이 우수한 에폭시 수지 조성물 및 섬유 강화 복합재료
DE10131698A1 (de) 2001-06-29 2003-01-30 Osram Opto Semiconductors Gmbh Oberflächenmontierbares strahlungsemittierendes Bauelement und Verfahren zu dessen Herstellung
US20030008490A1 (en) * 2001-07-09 2003-01-09 Guoqiang Xing Dual hardmask process for the formation of copper/low-k interconnects
US6696222B2 (en) * 2001-07-24 2004-02-24 Silicon Integrated Systems Corp. Dual damascene process using metal hard mask
JP4147755B2 (ja) 2001-07-31 2008-09-10 日亜化学工業株式会社 発光装置とその製造方法
TW511303B (en) 2001-08-21 2002-11-21 Wen-Jr He A light mixing layer and method
JPWO2003021668A1 (ja) * 2001-08-31 2004-12-24 日立化成工業株式会社 配線基板、半導体装置及びそれらの製造方法
WO2004020704A1 (en) 2001-08-31 2004-03-11 Semitool, Inc. Apparatus and method for deposition of an electrophoretic emulsion
JP2006080565A (ja) 2001-09-03 2006-03-23 Matsushita Electric Ind Co Ltd 半導体発光デバイスの製造方法
KR100923804B1 (ko) 2001-09-03 2009-10-27 파나소닉 주식회사 반도체발광소자, 발광장치 및 반도체발광소자의 제조방법
US6759266B1 (en) * 2001-09-04 2004-07-06 Amkor Technology, Inc. Quick sealing glass-lidded package fabrication method
JP3925137B2 (ja) 2001-10-03 2007-06-06 日亜化学工業株式会社 発光装置の製造方法
TW517356B (en) * 2001-10-09 2003-01-11 Delta Optoelectronics Inc Package structure of display device and its packaging method
JP3948650B2 (ja) 2001-10-09 2007-07-25 アバゴ・テクノロジーズ・イーシービーユー・アイピー(シンガポール)プライベート・リミテッド 発光ダイオード及びその製造方法
US6531328B1 (en) * 2001-10-11 2003-03-11 Solidlite Corporation Packaging of light-emitting diode
WO2003034508A1 (fr) 2001-10-12 2003-04-24 Nichia Corporation Dispositif d'emission de lumiere et procede de fabrication de celui-ci
ES2262874T3 (es) 2001-11-27 2006-12-01 Basell Poliolefine Italia S.R.L. Composiciones de polimero de propileno claras y flexibles.
JP4055405B2 (ja) 2001-12-03 2008-03-05 ソニー株式会社 電子部品及びその製造方法
JP2003170465A (ja) * 2001-12-04 2003-06-17 Matsushita Electric Ind Co Ltd 半導体パッケージの製造方法およびそのための封止金型
US7066335B2 (en) 2001-12-19 2006-06-27 Pretech As Apparatus for receiving and distributing cash
AU2003205508A1 (en) 2002-01-07 2003-07-24 Patent - Treuhand - Gesellschaft Fur Elektrische Gluhlampen Mbh Lamp
TW518775B (en) * 2002-01-29 2003-01-21 Chi-Hsing Hsu Immersion cooling type light emitting diode and its packaging method
JP2003234511A (ja) 2002-02-06 2003-08-22 Toshiba Corp 半導体発光素子およびその製造方法
JP4269709B2 (ja) 2002-02-19 2009-05-27 日亜化学工業株式会社 発光装置およびその製造方法
US6924514B2 (en) 2002-02-19 2005-08-02 Nichia Corporation Light-emitting device and process for producing thereof
JP3801931B2 (ja) 2002-03-05 2006-07-26 ローム株式会社 Ledチップを使用した発光装置の構造及び製造方法
JP3972183B2 (ja) * 2002-03-07 2007-09-05 セイコーエプソン株式会社 半導体装置及びその製造方法、回路基板並びに電子機器
US6756186B2 (en) 2002-03-22 2004-06-29 Lumileds Lighting U.S., Llc Producing self-aligned and self-exposed photoresist patterns on light emitting devices
US20030189215A1 (en) 2002-04-09 2003-10-09 Jong-Lam Lee Method of fabricating vertical structure leds
US6949389B2 (en) * 2002-05-02 2005-09-27 Osram Opto Semiconductors Gmbh Encapsulation for organic light emitting diodes devices
CA2427559A1 (en) * 2002-05-15 2003-11-15 Sumitomo Electric Industries, Ltd. White color light emitting device
JP2004014841A (ja) * 2002-06-07 2004-01-15 Fujitsu Ltd 半導体装置及びその製造方法
US6841802B2 (en) * 2002-06-26 2005-01-11 Oriol, Inc. Thin film light emitting diode
JP2004031856A (ja) 2002-06-28 2004-01-29 Sumitomo Electric Ind Ltd ZnSe系発光装置およびその製造方法
KR101030068B1 (ko) 2002-07-08 2011-04-19 니치아 카가쿠 고교 가부시키가이샤 질화물 반도체 소자의 제조방법 및 질화물 반도체 소자
DE10237084A1 (de) * 2002-08-05 2004-02-19 Osram Opto Semiconductors Gmbh Verfahren zum Herstellen eines elektrischen Leiterrahmens und Verfahren zum Herstellen eines oberflächenmontierbaren Halbleiterbauelements
KR20040017926A (ko) 2002-08-22 2004-03-02 웬-치 호 광-혼합 층 및 광-혼합 방법
JP2004083653A (ja) 2002-08-23 2004-03-18 Sharp Corp 発光装置ならびに蛍光体およびその製造方法
US20040038442A1 (en) * 2002-08-26 2004-02-26 Kinsman Larry D. Optically interactive device packages and methods of assembly
EP1892764B1 (en) 2002-08-29 2016-03-09 Seoul Semiconductor Co., Ltd. Light-emitting device having light-emitting diodes
JP2004095765A (ja) 2002-08-30 2004-03-25 Nichia Chem Ind Ltd 発光装置およびその製造方法
US7078737B2 (en) 2002-09-02 2006-07-18 Matsushita Electric Industrial Co., Ltd. Light-emitting device
US7264378B2 (en) 2002-09-04 2007-09-04 Cree, Inc. Power surface mount light emitting die package
KR101182041B1 (ko) 2002-09-19 2012-09-11 크리 인코포레이티드 경사 측벽을 포함하고 인광물질이 코팅된 발광 다이오드,및 그의 제조방법
JP2004134699A (ja) 2002-10-15 2004-04-30 Toyoda Gosei Co Ltd 発光装置
WO2004040661A2 (de) 2002-10-30 2004-05-13 Osram Opto Semiconductors Gmbh Verfahren zum herstellen einer leuchtdioden-lichtquelle mit lumineszenz-konversionselement
JP4072632B2 (ja) 2002-11-29 2008-04-09 豊田合成株式会社 発光装置及び発光方法
JP4292794B2 (ja) 2002-12-04 2009-07-08 日亜化学工業株式会社 発光装置、発光装置の製造方法および発光装置の色度調整方法
DE10258193B4 (de) 2002-12-12 2014-04-10 Osram Opto Semiconductors Gmbh Verfahren zum Herstellen von Leuchtdioden-Lichtquellen mit Lumineszenz-Konversionselement
US6917057B2 (en) 2002-12-31 2005-07-12 Gelcore Llc Layered phosphor coatings for LED devices
JP4411841B2 (ja) 2003-01-10 2010-02-10 三菱化学株式会社 発光装置及びそれを用いた照明装置並びにディスプレイ
JP3858829B2 (ja) 2003-02-06 2006-12-20 日亜化学工業株式会社 発光ダイオードの形成方法
US7042020B2 (en) 2003-02-14 2006-05-09 Cree, Inc. Light emitting device incorporating a luminescent material
JP4254266B2 (ja) 2003-02-20 2009-04-15 豊田合成株式会社 発光装置及び発光装置の製造方法
US7423296B2 (en) 2003-02-26 2008-09-09 Avago Technologies Ecbu Ip Pte Ltd Apparatus for producing a spectrally-shifted light output from a light emitting device utilizing thin-film luminescent layers
JP4131178B2 (ja) 2003-02-28 2008-08-13 豊田合成株式会社 発光装置
JP4303550B2 (ja) 2003-09-30 2009-07-29 豊田合成株式会社 発光装置
JP3900093B2 (ja) 2003-03-11 2007-04-04 日立電線株式会社 モールド金型及びそれを用いた半導体装置の製造方法
US7038370B2 (en) 2003-03-17 2006-05-02 Lumileds Lighting, U.S., Llc Phosphor converted light emitting device
JP4550386B2 (ja) 2003-03-27 2010-09-22 三菱電機株式会社 光半導体素子用パッケージ
WO2004099342A1 (en) 2003-05-12 2004-11-18 Luxpia Co., Ltd. Tb,b-based yellow phosphor, its preparation method, and white semiconductor light emitting device incorporating the same
JP2004363380A (ja) 2003-06-05 2004-12-24 Sanyo Electric Co Ltd 光半導体装置およびその製造方法
JP4415572B2 (ja) 2003-06-05 2010-02-17 日亜化学工業株式会社 半導体発光素子およびその製造方法
JP3813599B2 (ja) 2003-06-13 2006-08-23 ローム株式会社 白色発光の発光ダイオード素子を製造する方法
US7075225B2 (en) 2003-06-27 2006-07-11 Tajul Arosh Baroky White light emitting device
JP4034241B2 (ja) 2003-06-27 2008-01-16 日本ライツ株式会社 光源装置および光源装置の製造方法
US6921929B2 (en) 2003-06-27 2005-07-26 Lockheed Martin Corporation Light-emitting diode (LED) with amorphous fluoropolymer encapsulant and lens
US7200009B2 (en) * 2003-07-01 2007-04-03 Nokia Corporation Integrated electromechanical arrangement and method of production
US20080106893A1 (en) 2004-07-02 2008-05-08 S. C. Johnson & Son, Inc. Lamp and bulb for illumination and ambiance lighting
JP4503950B2 (ja) 2003-07-11 2010-07-14 スタンレー電気株式会社 蛍光体一体型ledランプの製造方法
JP2005030369A (ja) 2003-07-11 2005-02-03 Denso Corp 環境保全貢献システム、車載装置、回生電力活用システム、および回生発電の価値還元方法
DE102004034166B4 (de) 2003-07-17 2015-08-20 Toyoda Gosei Co., Ltd. Lichtemittierende Vorrichtung
JP4277617B2 (ja) 2003-08-08 2009-06-10 日立電線株式会社 半導体発光素子の製造方法
US7675075B2 (en) 2003-08-28 2010-03-09 Panasonic Corporation Semiconductor light emitting device, light emitting module, lighting apparatus, display element and manufacturing method of semiconductor light emitting device
US7183587B2 (en) 2003-09-09 2007-02-27 Cree, Inc. Solid metal block mounting substrates for semiconductor light emitting devices
US7029935B2 (en) 2003-09-09 2006-04-18 Cree, Inc. Transmissive optical elements including transparent plastic shell having a phosphor dispersed therein, and methods of fabricating same
US7915085B2 (en) 2003-09-18 2011-03-29 Cree, Inc. Molded chip fabrication method
US8610145B2 (en) 2003-09-30 2013-12-17 Kabushiki Kaisha Toshiba Light emitting device
EP1670832A4 (en) 2003-10-08 2006-12-20 Avery Dennison Corp ADHESIVE ATTENUATING NOISE
KR100587328B1 (ko) 2003-10-16 2006-06-08 엘지전자 주식회사 Led 면광원
WO2005050748A1 (ja) 2003-11-19 2005-06-02 Nichia Corporation 半導体素子及びその製造方法
JP2005167079A (ja) 2003-12-04 2005-06-23 Toyoda Gosei Co Ltd 発光装置
CN1317775C (zh) 2003-12-10 2007-05-23 玄基光电半导体股份有限公司 发光二极管封装结构及其封装方法
JP2005197369A (ja) 2004-01-05 2005-07-21 Toshiba Corp 光半導体装置
JP4231417B2 (ja) 2004-01-07 2009-02-25 パナソニック株式会社 基板処理装置及びそのクリーニング方法
JP2005252222A (ja) 2004-02-03 2005-09-15 Matsushita Electric Ind Co Ltd 半導体発光装置、照明モジュール、照明装置、表示素子、および半導体発光装置の製造方法
JP4357311B2 (ja) 2004-02-04 2009-11-04 シチズン電子株式会社 発光ダイオードチップ
US7246923B2 (en) 2004-02-11 2007-07-24 3M Innovative Properties Company Reshaping light source modules and illumination systems using the same
US20070018573A1 (en) 2004-02-18 2007-01-25 Showa Denko K,K. Phosphor, production method thereof and light-emitting device using the phosphor
US7569863B2 (en) 2004-02-19 2009-08-04 Panasonic Corporation Semiconductor light emitting device
US7250715B2 (en) 2004-02-23 2007-07-31 Philips Lumileds Lighting Company, Llc Wavelength converted semiconductor light emitting devices
US6924233B1 (en) 2004-03-19 2005-08-02 Agilent Technologies, Inc. Phosphor deposition methods
JP4516337B2 (ja) 2004-03-25 2010-08-04 シチズン電子株式会社 半導体発光装置
KR100486177B1 (ko) 2004-03-25 2005-05-06 에피밸리 주식회사 Ⅲ-질화물 반도체 발광소자
US20050211991A1 (en) 2004-03-26 2005-09-29 Kyocera Corporation Light-emitting apparatus and illuminating apparatus
US20050211910A1 (en) 2004-03-29 2005-09-29 Jmar Research, Inc. Morphology and Spectroscopy of Nanoscale Regions using X-Rays Generated by Laser Produced Plasma
US7517728B2 (en) 2004-03-31 2009-04-14 Cree, Inc. Semiconductor light emitting devices including a luminescent conversion element
US7419912B2 (en) 2004-04-01 2008-09-02 Cree, Inc. Laser patterning of light emitting devices
US20060007207A1 (en) 2004-04-01 2006-01-12 Toshiba Matsushita Display Technology Co., Ltd. Liquid crystal display device and method of driving liquid crystal display device
US20050280894A1 (en) 2004-04-02 2005-12-22 David Hartkop Apparatus for creating a scanning-column backlight in a scanning aperture display device
US7868343B2 (en) 2004-04-06 2011-01-11 Cree, Inc. Light-emitting devices having multiple encapsulation layers with at least one of the encapsulation layers including nanoparticles and methods of forming the same
WO2005101445A1 (en) 2004-04-15 2005-10-27 Koninklijke Philips Electronics N.V. Electrically controllable color conversion cell
WO2005103562A2 (en) 2004-04-23 2005-11-03 Light Prescriptions Innovators, Llc Optical manifold for light-emitting diodes
KR101157313B1 (ko) 2004-04-27 2012-06-18 파나소닉 주식회사 형광체 조성물과 그 제조방법, 및 그 형광체 조성물을 이용한 발광 장치
JP4471729B2 (ja) 2004-04-30 2010-06-02 シチズン電子株式会社 液晶レンズ付き発光装置
TWI241034B (en) 2004-05-20 2005-10-01 Lighthouse Technology Co Ltd Light emitting diode package
EP1601030B1 (en) 2004-05-24 2019-04-03 OSRAM OLED GmbH Light-emitting electronic component
US7278760B2 (en) 2004-05-24 2007-10-09 Osram Opto Semiconductor Gmbh Light-emitting electronic component
WO2005116521A1 (en) 2004-05-28 2005-12-08 Tir Systems Ltd. Luminance enhancement apparatus and method
WO2005121641A1 (en) 2004-06-11 2005-12-22 Koninklijke Philips Electronics N.V. Illumination system
DE102004031603B4 (de) 2004-06-30 2008-04-17 Eads Deutschland Gmbh Verfahren zur Formung von Signalspektren und Schaltung zur Durchführung des Verfahrens
US7534633B2 (en) 2004-07-02 2009-05-19 Cree, Inc. LED with substrate modifications for enhanced light extraction and method of making same
US7271420B2 (en) 2004-07-07 2007-09-18 Cao Group, Inc. Monolitholic LED chip to emit multiple colors
JP4932144B2 (ja) 2004-07-12 2012-05-16 株式会社朝日ラバー Ledランプ
JP4613546B2 (ja) 2004-08-04 2011-01-19 日亜化学工業株式会社 発光装置
JP2006049533A (ja) 2004-08-04 2006-02-16 Wacker Asahikasei Silicone Co Ltd 樹脂封止発光ダイオード装置及び封止方法
JP4747726B2 (ja) 2004-09-09 2011-08-17 豊田合成株式会社 発光装置
JP3802911B2 (ja) 2004-09-13 2006-08-02 ローム株式会社 半導体発光装置
US7217583B2 (en) 2004-09-21 2007-05-15 Cree, Inc. Methods of coating semiconductor light emitting elements by evaporating solvent from a suspension
US8174037B2 (en) 2004-09-22 2012-05-08 Cree, Inc. High efficiency group III nitride LED with lenticular surface
US8513686B2 (en) 2004-09-22 2013-08-20 Cree, Inc. High output small area group III nitride LEDs
US7737459B2 (en) 2004-09-22 2010-06-15 Cree, Inc. High output group III nitride light emitting diodes
US7259402B2 (en) 2004-09-22 2007-08-21 Cree, Inc. High efficiency group III nitride-silicon carbide light emitting diode
US7372198B2 (en) 2004-09-23 2008-05-13 Cree, Inc. Semiconductor light emitting devices including patternable films comprising transparent silicone and phosphor
JP4756841B2 (ja) 2004-09-29 2011-08-24 スタンレー電気株式会社 半導体発光装置の製造方法
DE102004060358A1 (de) 2004-09-30 2006-04-13 Osram Opto Semiconductors Gmbh Verfahren zum Herstellen von Lumineszenzdiodenchips und Lumineszenzdiodenchip
JP2006114637A (ja) 2004-10-13 2006-04-27 Toshiba Corp 半導体発光装置
US8134292B2 (en) 2004-10-29 2012-03-13 Ledengin, Inc. Light emitting device with a thermal insulating and refractive index matching material
JP4802533B2 (ja) 2004-11-12 2011-10-26 日亜化学工業株式会社 半導体装置
JP2006165416A (ja) 2004-12-10 2006-06-22 Stanley Electric Co Ltd 白色表示器とその製造方法
US7671529B2 (en) 2004-12-10 2010-03-02 Philips Lumileds Lighting Company, Llc Phosphor converted light emitting device
KR100646093B1 (ko) 2004-12-17 2006-11-15 엘지이노텍 주식회사 발광소자 패키지
US8288942B2 (en) 2004-12-28 2012-10-16 Cree, Inc. High efficacy white LED
KR100638666B1 (ko) 2005-01-03 2006-10-30 삼성전기주식회사 질화물 반도체 발광소자
US7195944B2 (en) 2005-01-11 2007-03-27 Semileds Corporation Systems and methods for producing white-light emitting diodes
US7221044B2 (en) 2005-01-21 2007-05-22 Ac Led Lighting, L.L.C. Heterogeneous integrated high voltage DC/AC light emitter
US7932111B2 (en) 2005-02-23 2011-04-26 Cree, Inc. Substrate removal process for high light extraction LEDs
JP2006245020A (ja) 2005-02-28 2006-09-14 Sharp Corp 発光ダイオード素子とその製造方法
JP4601464B2 (ja) 2005-03-10 2010-12-22 株式会社沖データ 半導体装置、プリントヘッド、及びそれを用いた画像形成装置
US7341878B2 (en) 2005-03-14 2008-03-11 Philips Lumileds Lighting Company, Llc Wavelength-converted semiconductor light emitting device
JP4961799B2 (ja) 2005-04-08 2012-06-27 日亜化学工業株式会社 スクリーン印刷で形成したシリコーン樹脂層を有する発光装置
KR101047683B1 (ko) 2005-05-17 2011-07-08 엘지이노텍 주식회사 와이어 본딩이 불필요한 발광소자 패키징 방법
US8669572B2 (en) 2005-06-10 2014-03-11 Cree, Inc. Power lamp package
KR100665219B1 (ko) 2005-07-14 2007-01-09 삼성전기주식회사 파장변환형 발광다이오드 패키지
JP2007063538A (ja) 2005-08-03 2007-03-15 Shin Etsu Chem Co Ltd 発光ダイオード用付加硬化型シリコーン樹脂組成物
US7365371B2 (en) 2005-08-04 2008-04-29 Cree, Inc. Packages for semiconductor light emitting devices utilizing dispensed encapsulants
US8563339B2 (en) 2005-08-25 2013-10-22 Cree, Inc. System for and method for closed loop electrophoretic deposition of phosphor materials on semiconductor devices
JP2007087973A (ja) 2005-09-16 2007-04-05 Rohm Co Ltd 窒化物半導体素子の製法およびその方法により得られる窒化物半導体発光素子
DE102005062514A1 (de) 2005-09-28 2007-03-29 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement
JP5127455B2 (ja) 2005-09-29 2013-01-23 株式会社東芝 白色発光装置とその製造方法、およびそれを用いたバックライト並びに液晶表示装置
US7391558B2 (en) * 2005-10-19 2008-06-24 Raytheon Company Laser amplifier power extraction enhancement system and method
EP1949459A4 (en) 2005-10-24 2014-04-30 3M Innovative Properties Co METHOD FOR PRODUCING AN ILLUMINATING ELEMENT WITH A FORM CAPACITANT
US7344952B2 (en) 2005-10-28 2008-03-18 Philips Lumileds Lighting Company, Llc Laminating encapsulant film containing phosphor over LEDs
US7564070B2 (en) 2005-11-23 2009-07-21 Visteon Global Technologies, Inc. Light emitting diode device having a shield and/or filter
DE102005058127A1 (de) 2005-11-30 2007-06-06 Schefenacker Vision Systems Germany Gmbh Fahrzeugleuchte
KR100732849B1 (ko) 2005-12-21 2007-06-27 삼성에스디아이 주식회사 유기 발광 표시장치
JP4828226B2 (ja) 2005-12-28 2011-11-30 新光電気工業株式会社 発光装置及びその製造方法
KR100723247B1 (ko) 2006-01-10 2007-05-29 삼성전기주식회사 칩코팅형 led 패키지 및 그 제조방법
WO2007080541A1 (en) 2006-01-16 2007-07-19 Philips Intellectual Property & Standards Gmbh Light emitting device with a eu-comprising phosphor material
KR200412776Y1 (ko) 2006-01-19 2006-03-31 주식회사 닥터코리아 약쑥이 함유된 침구류용 솜
US7682850B2 (en) 2006-03-17 2010-03-23 Philips Lumileds Lighting Company, Llc White LED for backlight with phosphor plates
KR200417926Y1 (ko) 2006-03-21 2006-06-02 황성민 차량 진입 방지용 경계석
WO2007107903A1 (en) 2006-03-23 2007-09-27 Koninklijke Philips Electronics N.V. Led-based lighting device with colour control
US20070269586A1 (en) 2006-05-17 2007-11-22 3M Innovative Properties Company Method of making light emitting device with silicon-containing composition
TWI308401B (en) 2006-07-04 2009-04-01 Epistar Corp High efficient phosphor-converted light emitting diode
JP5178714B2 (ja) 2006-07-06 2013-04-10 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 照明装置パッケージ
KR200429313Y1 (ko) 2006-08-03 2006-10-20 (주)에코청진 계단 적층식 식생 옹벽블록
JP2008129043A (ja) 2006-11-16 2008-06-05 Toyoda Gosei Co Ltd Led発光表示装置
EP1935452A1 (en) 2006-12-19 2008-06-25 Koninklijke Philips Electronics N.V. Electrochromic device and photodynamic treatment device comprising such an electrochromic device
US8704254B2 (en) 2006-12-22 2014-04-22 Philips Lumileds Lighting Company, Llc Light emitting device including a filter
US9024349B2 (en) 2007-01-22 2015-05-05 Cree, Inc. Wafer level phosphor coating method and devices fabricated utilizing method
US8232564B2 (en) 2007-01-22 2012-07-31 Cree, Inc. Wafer level phosphor coating technique for warm light emitting diodes
JP2008218511A (ja) 2007-02-28 2008-09-18 Toyoda Gosei Co Ltd 半導体発光装置及びその製造方法
DE102007022090A1 (de) 2007-05-11 2008-11-13 Osram Opto Semiconductors Gmbh Lichtemittierendes Bauelement
US7588351B2 (en) 2007-09-27 2009-09-15 Osram Sylvania Inc. LED lamp with heat sink optic
US8439528B2 (en) 2007-10-03 2013-05-14 Switch Bulb Company, Inc. Glass LED light bulbs
US7915627B2 (en) 2007-10-17 2011-03-29 Intematix Corporation Light emitting device with phosphor wavelength conversion
TW200921934A (en) 2007-11-06 2009-05-16 Prodisc Technology Inc Discrete light-emitting diode light source device of wavelength conversion unit
ES2370758T3 (es) 2007-11-09 2011-12-22 Koninklijke Philips Electronics N.V. Dispositivo de salida de luz.
US20100328925A1 (en) 2008-01-22 2010-12-30 Koninklijke Philips Electronics N.V. Illumination device with led and a transmissive support comprising a luminescent material
JP5279329B2 (ja) 2008-04-24 2013-09-04 パナソニック株式会社 レンズ付発光ユニット
US20090268461A1 (en) 2008-04-28 2009-10-29 Deak David G Photon energy conversion structure
US8159131B2 (en) 2008-06-30 2012-04-17 Bridgelux, Inc. Light emitting device having a transparent thermally conductive layer
CN102159881B (zh) 2008-09-23 2014-08-13 皇家飞利浦电子股份有限公司 具有热致可变反射元件的发光器件
US8089085B2 (en) 2009-02-26 2012-01-03 Bridgelux, Inc. Heat sink base for LEDS
US20120043886A1 (en) 2010-08-18 2012-02-23 Hua Ji Integrated Heat Conductive Light Emitting Diode (LED) White Light Source Module

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