JP6322581B2 - 発光用途用成形ナノ粒子蛍光体 - Google Patents
発光用途用成形ナノ粒子蛍光体 Download PDFInfo
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- JP6322581B2 JP6322581B2 JP2014552711A JP2014552711A JP6322581B2 JP 6322581 B2 JP6322581 B2 JP 6322581B2 JP 2014552711 A JP2014552711 A JP 2014552711A JP 2014552711 A JP2014552711 A JP 2014552711A JP 6322581 B2 JP6322581 B2 JP 6322581B2
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y10S977/00—Nanotechnology
- Y10S977/70—Nanostructure
- Y10S977/773—Nanoparticle, i.e. structure having three dimensions of 100 nm or less
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Description
本出願は、2012年1月19日に出願された米国仮出願第61/588,377号の利益を主張し、その内容の全ては、引用を以って、本明細書の一部となる。
一般的な20mwLEDパッケージのサイズの成形ナノ粒子蛍光体を、モールドとして、実際のLEDパッケージを用いて作製した。トルエンのCFQD溶液(例えば、20mg無機)を、真空下で乾燥して、QD残留物を残した。残留物について、ラウリルメタクリレート(1.85ml、6.6mmol)を、架橋剤トリメチロールプロパントリメタクリレート(1.06ml、3.3mmol)に溶解した光開始剤(イルガキュア 819、9mg)の溶液に加えた。モノマー混合物のアリコート(1.5乃至3ul)を用いて、LEDのカップを満した。次に、充填されたLEDに光を照射した(HamamatsuUV―LEDランプLC―L2、365nm、7500mW/cm2、3分)。そして、凝固した成形ナノ粒子蛍光体を、単純に叩いてLEDから取り除いて、次に、(例えば、原子層堆積―ALDなどのコーティング方法、又はPVOH等の高遮断材料を用いて)気体遮断フィルムでコーティングした。次に、コーティングされたディスクを、適当な封入用樹脂で満たされた新たなLEDパッケージに装着した。
Claims (10)
- 成形ナノ粒子蛍光体を作製する方法であって、
マトリックス材料前駆体に懸濁したナノ粒子の懸濁液を、モールドに準備する工程と、
前記ナノ粒子が分散したマトリックス材料へと前記マトリックス材料前駆体を転化する工程と、
前記マトリックス材料を前記モールドから取り出す工程と、
前記マトリックス材料の各面を気体遮断材料でコーティングして、成形ナノ粒子蛍光体を形成する工程と、
を含んでいる、方法。 - 前記マトリックス材料は、ポリマーである、請求項1に記載の方法。
- 前記マトリックス材料は、エポキシ、シリコーン、又はアクリレートである、請求項1に記載の方法。
- 前記気体遮断材料は、ポリマー、金属酸化物、金属窒化物、又はガラスである、請求項1に記載の方法。
- 前記気体遮断材料は、エポキシ、シリコーン、又はアクリレートである、請求項1に記載の方法。
- 前記マトリックス材料前駆体は、モノマー配合物を含む、請求項1に記載の方法。
- 前記マトリックス材料前駆体は、更に、触媒、架橋剤、又は開始剤を含む、請求項7に記載の方法。
- 前記マトリックス材料前駆体を前記マトリックス材料に転化する工程は、重合成形、接触成形、鋳造成形、押出成形又は射出成形を含む、請求項1に記載の方法。
- 前記マトリックス材料の各面を気体遮断材でコーティングする工程は、原子層堆積、ブラシコーティング、蒸着コーティング、又はスプレーコーティングを含む、請求項1に記載の方法。
- 請求項1乃至9の何れかによる成形ナノ粒子蛍光体を製造する工程と、
前記成形されたナノ粒子蛍光体を光放出ダイオードパッケージに組込む工程と、
を含む、ナノ粒子ベースの発光デバイスの製造方法。
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US201261588377P | 2012-01-19 | 2012-01-19 | |
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PCT/IB2013/000408 WO2013108125A2 (en) | 2012-01-19 | 2013-01-17 | Molded nanoparticle phosphor for light emitting applications |
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US10066158B2 (en) | 2018-09-04 |
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WO2013108125A3 (en) | 2013-10-24 |
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