JP6481015B2 - 発光用途用成形ナノ粒子蛍光体 - Google Patents
発光用途用成形ナノ粒子蛍光体 Download PDFInfo
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- JP6481015B2 JP6481015B2 JP2017233026A JP2017233026A JP6481015B2 JP 6481015 B2 JP6481015 B2 JP 6481015B2 JP 2017233026 A JP2017233026 A JP 2017233026A JP 2017233026 A JP2017233026 A JP 2017233026A JP 6481015 B2 JP6481015 B2 JP 6481015B2
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- C08G2261/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
- C08G2261/90—Applications
- C08G2261/95—Use in organic luminescent diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H—ELECTRICITY
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- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y10S977/70—Nanostructure
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Description
本出願は、2012年1月19日に出願された米国仮出願第61/588,377号の利益を主張し、その内容の全ては、引用を以って、本明細書の一部となる。
一般的な20mwLEDパッケージのサイズの成形ナノ粒子蛍光体を、モールドとして、実際のLEDパッケージを用いて作製した。トルエンのCFQD溶液(例えば、20mg無機)を、真空下で乾燥して、QD残留物を残した。残留物について、ラウリルメタクリレート(1.85ml、6.6mmol)を、架橋剤トリメチロールプロパントリメタクリレート(1.06ml、3.3mmol)に溶解した光開始剤(イルガキュア 819、9mg)の溶液に加えた。モノマー混合物のアリコート(1.5乃至3ul)を用いて、LEDのカップを満した。次に、充填されたLEDに光を照射した(HamamatsuUV―LEDランプLC―L2、365nm、7500mW/cm2、3分)。そして、凝固した成形ナノ粒子蛍光体を、単純に叩いてLEDから取り除いて、次に、(例えば、原子層堆積―ALDなどのコーティング方法、又はPVOH等の高遮断材料を用いて)気体遮断フィルムでコーティングした。次に、コーティングされたディスクを、適当な封入用樹脂で満たされた新たなLEDパッケージに装着した。
Claims (10)
- LEDパッケージに組み込むために構成された構造であって、
前記LEDパッケージの内側表面に適合する形状を有しているモールド成形ナノ粒子蛍光体であって、マトリックス材料と、前記マトリックス材料に分散した複数のナノ粒子とを含むモールド成形ナノ粒子蛍光体と、
前記モールド成形ナノ粒子蛍光体の表面にコーティングされた気体遮断材料と、
を含む構造。 - 前記マトリックス材料は、ポリマーである、請求項1に記載の構造。
- 前記マトリックス材料は、エポキシ、シリコーン、又はアクリレートの何れかである、請求項1に記載の構造。
- 前記気体遮断材料は、ポリマー、金属酸化物、金属窒化物、又はガラスの何れかである、請求項1に記載の構造。
- 前記金属酸化物は、Al2O3、B2O3、Co2O3、Cr2O3、CuO、Fe2O3、Ga2O3、HfO2、In2O3、MgO、Nb2O5、NiO、SiO2、SnO2、Ta2O5、TiO2、ZrO2、Sc2O3、Y2O3、GeO2、La2O3、CeO2、Nd2O3、Sm2O3、EuO4、Gd2O3、Dy2O3、Ho2O3、Er2O3、Tm2O3、Yb2O3、Lu2O3、SrTiO3、BaTiO3、PbTiO3、PbZrO3、SrTa2O6、SrBi2Ta2O9、YScO3、LaAlO3、NdAlO3、GdScO3、LaScO3、LaLuO3、Er3Ga5O13、BiaSibO、BimTinO、PrOx、及びEuOyからなる群から選択され、ここで、a、b、m、n、x、及びyは適切な整数である、請求項4に記載の構造。
- 前記金属窒化物は、BN、AlN、GaN、InN、Zr3N4、Cu2N、Hf3N4、TiN、Ta3N5、TiSiN、TiAlN、TaN、NbN、MoN、SiNc、WNd、及びWNeCfからなる群から選択され、ここで、c、d、e、及びfは適切な整数である、請求項4に記載の構造。
- 前記気体遮断材料は、エポキシ、シリコーン、又はアクリレートの何れかである、請求項1に記載の構造。
- 気体遮断層の厚さが、1乃至500nmである、請求項1に記載の構造。
- 前記複数のナノ粒子は、カドミウムを含まない、請求項1に記載の構造。
- 請求項1に記載の構造を備えるLEDパッケージ。
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Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |