US20190198725A1 - Molded chip fabrication method and apparatus - Google Patents

Molded chip fabrication method and apparatus Download PDF

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Publication number
US20190198725A1
US20190198725A1 US16/293,267 US201916293267A US2019198725A1 US 20190198725 A1 US20190198725 A1 US 20190198725A1 US 201916293267 A US201916293267 A US 201916293267A US 2019198725 A1 US2019198725 A1 US 2019198725A1
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led
matrix material
leds
semiconductor devices
formation cavity
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Michael S. Leung
Eric J. Tarsa
James Ibbetson
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Cree Inc
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Cree Inc
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Priority to US10/666,399 priority Critical patent/US7915085B2/en
Priority to US12/506,989 priority patent/US20090278156A1/en
Application filed by Cree Inc filed Critical Cree Inc
Priority to US16/293,267 priority patent/US20190198725A1/en
Publication of US20190198725A1 publication Critical patent/US20190198725A1/en
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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50Wavelength conversion elements
    • H01L33/501Wavelength conversion elements characterised by the materials, e.g. binder
    • H01L33/502Wavelength conversion materials
    • H01L33/504Elements with two or more wavelength conversion materials
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/565Moulds
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93Batch processes
    • H01L24/95Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/96Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being encapsulated in a common layer, e.g. neo-wafer or pseudo-wafer, said common layer being separable into individual assemblies after connecting
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50Wavelength conversion elements
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/18High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H01L2224/23Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
    • H01L2224/25Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of a plurality of high density interconnect connectors
    • H01L2224/251Disposition
    • H01L2224/2518Disposition being disposed on at least two different sides of the body, e.g. dual array
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/12Passive devices, e.g. 2 terminal devices
    • H01L2924/1204Optical Diode
    • H01L2924/12041LED
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation
    • H01L2924/1815Shape
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2933/00Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008Processes
    • H01L2933/0041Processes relating to wavelength conversion elements

Abstract

A method and apparatus for coating a plurality of semiconductor devices that is particularly adapted to coating LEDs with a coating material containing conversion particles. One method according to the invention comprises providing a mold with a formation cavity. A plurality of semiconductor devices are mounted within the mold formation cavity and a curable coating material is injected or otherwise introduced into the mold to fill the mold formation cavity and at least partially cover the semiconductor devices. The coating material is cured so that the semiconductor devices are at least partially embedded in the cured coating material. The cured coating material with the embedded semiconductor devices is removed from the formation cavity. The semiconductor devices are separated so that each is at least partially covered by a layer of the cured coating material. One embodiment of an apparatus according to the invention for coating a plurality of semiconductor devices comprises a mold housing having a formation cavity arranged to hold semiconductor devices. The formation cavity is also arranged so that a curable coating material can be injected into and fills the formation cavity to at least partially covering the semiconductor devices.

Description

  • This application is a continuation of and claims the benefit of U.S. patent application Ser. No. 12/506,989, to Leung et al., filed on Jul. 21, 2009, which claims the benefit of U.S. patent application Ser. No. 10/666,399 to Leung et al., filed on Sep. 18, 2003, now U.S. Pat. No. 7,915,085, issued on Mar. 29, 2011.
  • BACKGROUND OF THE INVENTION Field of the Invention
  • This invention relates to coating of semiconductor devices and more particularly to a method and apparatus for coating light emitting diodes (LEDs) with a matrix material containing one or more light conversion materials.
  • Description of the Related Art
  • LEDs are solid-state devices that convert electric energy to light and they generally comprise an active layer of semiconductor material sandwiched between two oppositely doped layers. When a bias is applied across the doped layers, holes and electrons are injected into the active layer where they recombine to generate light that is emitted omnidirectionally from the active layer and from all surfaces of the LED. Recent advances in LEDs (such as Group III nitride based LEDs) have resulted in highly efficient light sources that surpass the efficiency of filament-based light sources, providing light with equal or greater brightness in relation to input power.
  • One disadvantage of conventional LEDs used for lighting applications is that they cannot generate white light from their active layers. One way to produce white light from conventional LEDs is to combine different wavelengths of light from different LEDs. For example, white light can be produced by combining the light from red, green and blue emitting LEDs, or combining the light from blue and yellow LEDs.
  • One disadvantage of this approach is that it requires the use of multiple LEDs to produce a single color of light, increasing the overall cost and complexity. The different colors of light are also generated from different types of LEDs fabricated from different material systems. Combining different LED types to form a white lamp can require costly fabrication techniques and can require complex control circuitry since each device may have different electrical requirements and may behave differently under varied operating conditions (e.g. with temperature, current or time).
  • More recently, the light from a single blue emitting LED has been converted to white light by coating the LED with a yellow phosphor, polymer or dye, with a typical phosphor being cerium-doped yttrium aluminum garnet (Ce:YAG). [See Nichia Corp. white LED, Part No. NSPW300BS, NSPW312BS, etc.; See also U.S. Pat. No. 5,959,316 to Hayden, “Multiple Encapsulation of Phosphor-LED Devices”]. The surrounding phosphor material “downconverts” the wavelength of some of the LED's blue light, changing its color to yellow. For example, if a nitride-based blue emitting LED is surrounded by a yellow phosphor, some of the blue light passes through the phosphor without being changed while a substantial portion of the light is downconverted to yellow. The LED emits both blue and yellow light, which combine to provide a white light.
  • One conventional method for coating an LED with a phosphor layer utilizes a syringe or nozzle for injecting a phosphor containing epoxy over the LED. One disadvantage of this method is that it is often difficult to control the phosphor layer's geometry and thickness. As a result, light emitting from the LED at different angles can pass through different amounts of conversion material, which can result in an LED with non-uniform color temperature as a function of viewing angle. Another disadvantage of the syringe method is that because the geometry and thickness is hard to control, it is difficult to consistently reproduce LEDs with the same or similar emission characteristics.
  • Another conventional method for coating an LED is by stencil printing, which is described in European Patent Application EP 1198016 A2 to Lowery. Multiple light emitting semiconductor devices are arranged on a substrate with a desired distance between adjacent LEDs. The stencil is provided having openings that align with the LEDs, with the holes being slightly larger than the LEDs and the stencil being thicker than the LEDs. A stencil is positioned on the substrate with each of the LEDs located within a respective opening in the stencil. A composition is then deposited in the stencil openings, covering the LEDs, with a typical composition being a phosphor in a silicone polymer that can be cured by heat or light. After the holes are filled, the stencil is removed from the substrate and the stenciling composition is cured to a solid state.
  • One disadvantage of this method is that, like the syringe method above, it can be difficult to control the geometry and layer thickness of the phosphor containing polymer. The stenciling composition may not fully fill the stencil opening such that the resulting layer is not uniform. The phosphor containing composition can also stick to the stencil opening which reduces the amount of composition remaining on the LED. These problems can result in LEDs having non-uniform color temperature and LEDs that are difficult to consistently reproduce with the same or similar emission characteristics.
  • Another conventional method for coating LEDs with a phosphor utilizes electrophoretic deposition. The conversion material particles are suspended in an electrolyte based solution. A plurality of LEDs are arranged on a conductive substrate that is then almost completely immersed in the electrolyte solution. One electrode from a power source is coupled to the conductive substrate at a location that is not immersed in the solution, and the other electrode is arranged in the electrolyte solution. The bias from the power source is applied across the electrodes, which causes current to pass through the solution to the substrate and its LEDs. This creates an electric field that causes the conversion material to be drawn to the LEDs, covering the LEDs with the conversion material.
  • One of the disadvantages of this method is that after the LEDs are covered by the conversion material, the substrate is removed from the electrolyte solution so that LEDs and their conversion material can be covered by a protective epoxy. This adds an additional step to the process and the conversion material (phosphor particles) can be disturbed prior to the application of the epoxy. Another disadvantage of this process is that the electric field in the electrolyte solution can vary such that different concentrations of conversion material can be deposited across the LEDs. The conversion particles can also settle in the solution which can also result in different conversion material concentrations across the LEDs. The electrolyte solution can be stirred to prevent settling, but this presents the danger of disturbing the particles already on the LEDs.
  • SUMMARY OF THE INVENTION
  • The present invention seeks to provide a method and apparatus for coating semiconductor devices wherein the geometry and thickness of the coating layer can be controlled. The methods and apparatus according to the present invention are particularly adapted to coating light emitting diodes (LEDs) with a controlled layer of “matrix material” having conversion particles. The methods and apparatus are simple and easy to use, and allow for the reproduction of coated semiconductor devices having coating layer geometry and thickness that are substantially the same.
  • One embodiment of a method for coating a plurality of semiconductor devices according to the present invention comprises providing a mold with a formation cavity. A plurality of semiconductor devices are mounted within the mold formation cavity and a coating material is injected into the mold to fill the mold formation cavity and at least partially cover the semiconductor devices. The coating material is cured or otherwise treated so that the semiconductor devices are at least partially embedded in the coating material. The cured coating material with the embedded semiconductor devices is removed from the formation cavity. The semiconductor devices are separated so that each is at least partially covered by a layer of the coating material.
  • Another embodiment of a method according to the present invention is particularly adapted to coating a plurality of light emitting diodes (LEDs) and comprises providing a mold with a formation cavity. A plurality of LEDs are mounted within the mold formation cavity and a matrix material is injected or otherwise introduced into the mold to fill the formation cavity and at least partially cover the LEDs. The matrix material is then cured or otherwise treated so that the LEDs are at least partially embedded in the matrix material. The matrix material with the embedded LEDs is removed from the formation cavity and the embedded LEDs are separated so that each is at least partially covered by a layer of the matrix material.
  • One embodiment of an apparatus for coating a plurality of semiconductor devices comprises a mold housing having a formation cavity arranged to hold semiconductor devices. The formation cavity is also arranged so that a coating material can be injected or otherwise introduced into and fills the formation cavity to at least partially cover the semiconductor devices.
  • Another embodiment of apparatus according to the present invention is particularly adapted to coating LEDs and comprises a mold housing having a formation cavity arranged to hold a plurality of LEDs. The formation cavity comprising at least a top and bottom surface with the LEDs arranged on the bottom or top surface. The mold housing is also arranged so that a matrix material can be injected into its formation cavity covering the LEDs and filling the formation cavity.
  • After the coated LEDs are separated according to the present invention, a bias can be applied to each causing light to be emitted omnidirectionally. LED light passes through the layer of matrix material where at least some of it is converted to a different wavelength of light by the conversion particles. The arrangement of the formation cavity and the location of cuts between adjacent LEDs allows for the geometry and thickness of the layer of matrix material on each of the separated LEDs to be controlled such that the light emitting from the LED at different points on its surface passes through essentially the same amount of conversion material. This results in an LED with a more uniform color temperature as a function of viewing angle.
  • These and other further features and advantages of the invention will be apparent to those skilled in the art from the following detailed description, taken together with the accompanying drawings, in which:
  • BRIEF DESCRIPTION OF THE DRAWINGS
  • FIG. 1 is a flow diagram of one embodiment of a method for coating semiconductor devices according to the present invention;
  • FIG. 2 is a flow diagram of another embodiment of a method for coating semiconductor devices according to the present invention that is particularly adapted to coating light emitting diodes (LEDs);
  • FIG. 3 is a sectional view of one embodiment of a coating apparatus according to the present invention;
  • FIG. 4 is a sectional view of the coating apparatus in FIG. 3, with a matrix material injected into the formation cavity;
  • FIG. 5 is a sectional view of a sheet of LEDs and matrix material according to the present invention;
  • FIG. 6 is a sectional view of one embodiment of two coated LEDs according to the present invention separated from the sheet in FIG. 5;
  • FIG. 7 is a sectional view another embodiment of two coated LEDs according to the present invention separated from the sheet in FIG. 5;
  • FIG. 8 is a perspective view of one the LEDs shown in FIG. 7;
  • FIG. 9 is a sectional view of another embodiment of a coating apparatus according to the present invention for coating square devices;
  • FIG. 10 is a sectional view of the coating apparatus in FIG. 9, with a matrix material injected into the formation cavity;
  • FIG. 11 is a sectional view of a sheet of LEDs and matrix material according to the present invention;
  • FIG. 12 is a sectional view of one embodiment of two coated LEDs according to the present invention separated from the sheet in FIG. 11;
  • FIG. 13 is a sectional view of another coating apparatus according to the present invention;
  • FIG. 14 is a sectional view of the coating apparatus of FIG. 13 with a matrix material injected into the formation cavity;
  • FIG. 15 is a sectional view of a sheet of LEDs and matrix material according to the present invention;
  • FIG. 16 is a sectional view of one embodiment of two coated LEDs according to the present invention separated from the sheet in FIG. 11;
  • FIG. 17 is a sectional view of another embodiment of two coated LEDs according to the present invention separated from the sheet in FIG. 11;
  • FIG. 18 is a perspective view of one of the LEDs shown in FIG. 13.
  • FIG. 19 is a sectional view of another coating apparatus according to the present invention for coating square devices;
  • FIG. 20 is a sectional view of the coating apparatus of FIG. 19 with a matrix material injected into the formation cavity;
  • FIG. 21 is a sectional view of a sheet of LEDs and matrix material according to the present invention; and
  • FIG. 22 is a sectional view of one embodiment of two coated LEDs according to the present invention separated from the sheet in FIG. 11;
  • DETAILED DESCRIPTION OF THE INVENTION Coating Methods
  • FIG. 1 shows one embodiment of a method 10 for coating semiconductor devices according to the present invention and comprises a first step 12 of providing a mold. A preferred mold comprises a formation cavity that is arranged so that semiconductor devices can be held within it and a coating material can be injected or otherwise introduced into it to cover the devices. The cavity can have many different shapes and is preferably defined by at least upper and lower parallel surfaces. In other embodiments the cavity can be further defined by side surfaces running between the upper and lower surfaces. The different shapes of the formation cavity including, but are not limited to, disk, box or lens shaped. The side surfaces can run around the entire edge of the upper and lower surfaces or can be intermittent.
  • In step 14, semiconductor devices are arranged within the formation cavity and in the preferred method 10, the devices are precisely arranged in a predetermined pattern. The devices can be arranged in many different ways within the formation cavity using many different methods. In a preferred arrangement method the devices are placed on the lower surface by separating the upper surface from the lower and placing the devices using a precision pick and place system. Alternatively, the devices can be placed on the lower surface using a template such as a thin metal foil having a size and shape similar to the lower surface and openings corresponding to desired locations of the semiconductor devices. The foil can be placed on the lower surface and the semiconductor devices can be arranged within the foil openings. After the devices are placed, the foil can be removed. In both methods the upper surface can then be returned over the lower surface after the devices are placed. As further described below, the lateral space between adjacent devices and the space between the upper and lower surfaces provides the desired coating thickness over the semiconductor devices.
  • In step 16 a coating material is injected or otherwise introduced into the mold's formation cavity, filling the cavity and covering the semiconductor devices. In step 18 the coating material is processed and stabilized resulting in the hardening of the coating material and the semiconductors becoming at least partially embedded in the coating material. A sheet of semiconductor devices and coating material is formed. In a preferred method 10, the coating material is as an epoxy, silicone or other polymer and the preferred processing and stabilizing step 18 includes curing using conventional methods dictated by the coating material's curing schedule. This can include heat curing, optical curing or curing in room temperature. Alternatively, the matrix or coating material may comprise any variety of thermoset, thermoplast, injection molding, or other polymers or related materials.
  • In step 20, the sheet of semiconductor devices and coating material is removed from the mold's formation cavity for further processing. In step 22 the individual semiconductor devices are separated by cutting through the coating material between devices. This can be accomplished using many different methods such as conventional sawing or dicing, or by using a scribe and break.
  • As described above, in the preferred step 14 the semiconductor devices are placed on the lower surface with a uniform lateral distance between adjacent devices. The upper and lower surfaces of the formation cavity are also preferably parallel. If similar semiconductor devices having the same height are placed on the lower surface of the formation cavity, the distance between the top of each of the devices and the upper surface should be the same. This results in the thickness of the layer of coating material on the top of each of the devices that is substantially the same. When the devices are separated, the cut is preferably located such that the resulting layer covering the sides of each of the devices has the same thickness. In one embodiment of a method according to the present invention, the cut is equal distance between adjacent devices. This process produces devices that have a nearly uniform layer of coating material and the process can be repeated to produce similar devices. In other embodiments different types of cuts can be made at different angles to change the coating material thickness at different locations over the semiconductor devices.
  • The method 10 can be used to coat many different types of semiconductor devices, with a preferred device being a solid state light emitter such as a light emitting diode (LED). The preferred coating material in the method for covering LEDs is a “matrix material” that comprises a curable material and one or more light conversion materials (further described below).
  • FIG. 2 shows a flow diagram for a method 30 according to the present invention that is similar to the method 10, but is used to coat a plurality of LEDs. In step 32 a mold is provided having a formation cavity having at least upper and lower surfaces that are parallel, although the formation cavity can have many different shapes. The mold surfaces are preferably flat and comprise a material which does not adhere strongly to matrix materials or the LED during processing steps such as curing. By not adhering the upper and lower surfaces can be removed from the matrix material and LEDs without damage that could result in a non-uniform layer of matrix material over the LEDs. The upper and lower surfaces can be made of by many different materials and can be provided by sheet metal or glass slides.
  • To further reduce the danger that the upper and lower surfaces would adhere to the matrix material or LEDs, the surfaces of the formation cavity can also be covered with a coating or film layer that resists adhering to the matrix material and can also withstand heat from processing and curing. The film should be tacky enough on both sides to stick to glass or metal that forms the upper and lower surfaces and to stick to semiconductor materials that form the LEDs. The film should not bond to these materials or the matrix material which allows the semiconductor devices and cured matrix material to be easily separated from the mold surfaces without damage. Many different films can be used with a preferred film being a commercially available tape referred to as Gel-Pak®, provided by Gel-Pak, LLC.
  • In step 34 the LEDs are placed in a predefined array or pattern within the mold's formation cavity and in a preferred embodiment the film layer is arranged between the LEDs and the cavity's surface. The LEDs are preferably arranged on the lower surface of the formation cavity and can be placed using the same methods as used in step 14 of the method 10 described above.
  • It is desirable to have sufficient adhesion between the LEDs and the surface of the formation cavity such that underflow of the matrix materials is avoided between the LEDs and surface. Lateral LEDs have contacts on one surface and this surface is typically adjacent to a formation cavity surface (or film layer). Vertical LEDs typically have contacts on opposite surfaces, both of which can be adjacent to a formation cavity surface. It is desirable to avoid matrix material underflow that can cover the contacts so that after processing the LED can be electrically contacted. If underflow occurs, the matrix material must be removed from the contact surface, typically by etching, which can damage the LED and the contacts. One method to improve adhesion and reduce underflow is to apply a small amount of low tack adhesive such as silicone between the LED and the mold surface or film. This additional layer prevents underflow and can also serve as surface protection for the contacts during heat processing steps such as curing. Silicone can be removed by using convention cleaning processes that do not damage the LED or contacts.
  • In step 36 the matrix material is injected or otherwise introduced into and fills the mold's cavity, covering the LEDs. The matrix material can be made of many different compounds but preferably contains one or more light sensitive conversion materials such as phosphors distributed in an epoxy or silicone binder that can be thermally or optically curable, or cured at room temperature. To achieve uniform LED light emission, the conversion material should be distributed uniformly throughout the epoxy or silicone. For embodiments where it is desirable to emit non-uniform light, the conversion material can be non-uniform in the matrix material such that LED light emitting at different angles passes through different amounts of matrix material. Alternatively, the matrix material may exhibit or contain materials which exhibit a variety of useful properties such as high index of refraction to increase light extraction from the LED.
  • The following is a list of only some of the phosphors and that can be used alone or in combination as the conversion material, grouped by the re-emitted color that each emits following excitation.
  • Red
    • Y2O2S :Eu3+, Bi3+
    • YVO4:Eu3+, Bi3+
    • SrS:Eu2+
    • SrY2S4:Eu2+
    • CaLa2S4:Ce3+
    • (Ca, Sr) S:Eu2+
    • Y2O3:Eu3+, Bi3+
    • Lu2O3:Eu3+
    • (Sr2-xLax) (Ce1−xEux)O4
    • Sr2Ce1−xEuxO4
    • Sr2-xEuxCeO4
    • Sr2CeO4
    • SrTiO3:Pr3+, Ga3+
    Orange
    • SrSiO3:Eu,Bi
    Yellow/green
    • YBO3:Ce3+, Tb3+
    • BaMgAl10O17:Eu2+,Mn2+
    • (Sr, Ca, Ba) (Al, Ga)2S4:Eu2+
    • ZnS:Cu+, Al3+
    • LaPO4:Ce,Tb
    • Ca8Mg (SiO4)4Cl2:Eu2+, Mn2+
    • ((Gd,Y,Lu,Se,La,Sm)3(Al,Ga,In)5O12:Ce3+
    • ((Gd,Y)1-xSmx)3(Al1-yGay)5O12:Ce3+
    • (Y1-p-q-rGdpCeqSmr)3(Al1-yGay)5O12
    • Y3(Al1-sGas)5O12:Ce3+
    • (Y,Ga,La)3Al5O12:Ce3+
    • Gd3In5O12:Ce3+
    • (Gd,Y)3Al5O12:Ce3+, Pr3+
    • Ba2(Mg,Zn) Si2O7:Eu2+
    • (Y,Ca,Sr)3(Al,Ga,Si)5(O,S)12
    • Gd0.46Sr0.31Al1.23OxF1.38:E2+ 0.06
    • (Ba1-x-ySrxCay)SiO4:Eu
    • Ba2SiO4:Eu2+
    Blue
    • ZnS:Ag,Al
    Combined Yellow/Red
    • Y3Al5O12:Ce3+,Pr3+
    White
    • SrS:Eu2−,Ce3+,K+
  • It should be understood that many other phosphors and other materials can be used as the conversion material according to the present invention.
  • From the list above, the following phosphors are preferred for use as the conversion material based on certain desirable characteristic. Each is excited in the blue and/or UV emission spectrum, provides a desirable peak emission, has efficient light conversion, and has acceptable Stokes shift.
  • Red
    • Lu2O3:Eu3+
    • (Sr2-xLax)(Ce1-xEux)O4
    • Sr2Ce1-xEuxO4
    • Sr2-xEuxCeO4
    • SrTiO3:Pr3+, Ga3+
    Yellow/Green
    • (Sr,Ca,Ba)(A1,Ga)2S4:Eu2+
    • Ba2(Mg,Zn)Si2O7:Eu2+
    • Gd0.46Sr0.31Al1.23OxF1.38:E2+Eu2+ 2.06
    • (Ba1-x-ySrxCay)SiO4:Eu
    • Ba2SiO4 :Eu2+
      To further improve the uniformity of light emission from the covered LED, the matrix material can also include scattering particles to randomly refract the light as it passes through the matrix material. To effectively scatter light, the diameter of the scattering particles should be approximately one half of the wavelength of the light being scattered. Light from the LEDs pass through the particles and is refracted to mix and spread the light. Preferred scattering particles do not substantially absorb LED light and have a substantially different index of refraction than the material in which it is embedded (for example, epoxy). The scattering particles should have as high of an index of refraction as possible. Suitable scattering particles can be made of titanium oxide (TiO2) which has a high index of refraction (n=2.6 to 2.9). Other elements such as small voids or pores could also be used as to scatter the light.
  • In step 38, the matrix material is cured such that the LEDs are at least partially embedded in the matrix material. In the embodiment where the formation cavity comprises parallel upper and lower surfaces, LEDs and matrix material form a sheet with the LEDs at least partially embedded in the matrix material. The matrix material is allowed to cure by the material's curing schedule either in room temperature, under light for optical curing, or at an elevated temperature for heat curing. In a preferred embodiment of the method 30, all surfaces of the LEDs are covered except for their bottom surface. In step 40 the sheet of LEDs and matrix material is removed from the molds formation cavity, with one method being separating the upper and lower surfaces of the mold to release the sheet, although many other methods can also be used. In step 42, each LED can be singulated, preferably by separating the LEDs in the sheet into individual devices each of which has a similar thickness of matrix material around it. The methods described under step 20 of method 10 can be used, including sawing or dicing or scribe-and-break.
  • The mold is designed such that the distance between the formation cavity's upper and lower surfaces and the lateral separation between adjacent LEDs results in the desired uniform matrix material thickness on each of the separated LEDs. This results in coated LEDs that emit uniform color temperature and LEDs that can be consistently reproduced with the same or similar emission characteristics.
  • As more fully described below, depending on the type of LED being coated, the mold can be arranged differently. For lateral devices, where both the positive and negative terminals are on the same LED surface, the LEDs can be arranged with the contacts adjacent to the cavity's lower surface. Spacers can be included between the upper and lower surfaces to maintain the desired distance between the two such that there is a space between the top of the LEDs and the upper surface of the formation cavity. When the cavity is filled with the matrix material, that top surface of each of the LEDs is covered by a layer of matrix material having a similar thickness.
  • For LEDs having vertical contact geometry, one contact can be on each LED's top surface and the other contact can be on the LED's bottom surface. The top contact terminal should be protected during injection of the matrix material so that it is not covered by the matrix material. In one embodiment, the cavity's upper surface rests on the top surface contacts of the LEDs, with the contact point between the two preventing the top contacts from being fully covered by the injected matrix material.
  • For each of the above methods, the mold's formation cavity can be provided without a top surface. In those embodiments the matrix should be applied carefully and in a more controlled fashion to provide the desired thickness for the top layer in lateral LEDs and to prevent covering the top contact surface in vertical LEDs.
  • Coating Apparatus
  • FIGS. 3 and 4 show one embodiment of a compact coating apparatus 50 according to the present invention that can be used to compact coat many different semiconductor devices, but is particularly adapted to compact coating lateral LEDs with a matrix material. The apparatus 50 includes a mold housing 51 comprising a lower section 52 that includes a bottom rigid support block 54 having LEDs 55 arranged on its top surface. The top surface 56 the bottom support block 54 is preferably flat and the block 54 can be made of many different materials with many different thicknesses. The block material should not adhere to the LED or matrix material during the curing process. Suitable materials include aluminum, glass and stainless steel, and the bottom support block 54 should be thick enough that it does not flex during the layer formation process.
  • The LEDs 55 can be placed on the support block using the precision placement methods described above. A double sided adhesive film 58 can also be included between the LEDs 55 and the bottom block's flat surface 56. As described above, the film 58 sticks to the block surface 56 and also provides a tacky surface that holds the LEDs 55. The film 58 also withstands processing and curing steps while not adhering to the matrix material, with a suitable material for film 58 being Gel-Pak® (described above in the method 10 of FIG. 1). The film 58 helps to reduce the amount of matrix material that sticks to the surface of the bottom support block 54. In the embodiment shown with lateral LEDs 55, the positive and negative terminals 59, 60 for each of the LEDs 55 are on the surface of each LED that is adjacent to the first film 58 so that when the matrix material is injected into the mold 50, the positive and negative terminals are not covered by the matrix material.
  • The mold housing 50 also includes an upper section 61 arranged over the lower section 52. The upper section 61 comprises a top rigid support block 62 that provides a flat top surface 64 and can be made of the same material with the same or different thickness as the bottom rigid support block 54. A second layer of adhesive film 63 can also be included on the flat top surface 64 to provide a surface that does resists adhesion to the matrix material, and withstands the processing and curing steps.
  • The upper section 61 is arranged over the lower section 52 with the space between the two at least partially defining the mold's formation cavity 68. The space between the two should be large enough to provide a space between the top of the LEDs 55 and the second adhesive film 63. Referring to FIG. 4, a matrix material 70 can be injected or otherwise introduced into the formation cavity 68 such that it fills the space between the upper and lower section 52 and 61 and each of the LEDs is covered by the matrix material 70. The positive and negative terminals 59, 60 are protected from being covered by the matrix material and after the individual LEDs are separated (singulated) the terminals 59, 60 are available for contacting.
  • During the injection of the matrix material 70 and subsequent processing/curing steps, the distance between the lower and upper sections 52 and 61 should be maintained. The lower and upper sections 52 and 61 can have first and second vertical spacers 65, 66 (shown in FIGS. 2 and 4) running between them. The spacers 65, 66 are arranged to maintain the distance between the lower and upper sections 52 and 61 so that the desired matrix material layer thickness is achieved on the top surface of the LEDs 54. The spacers 65, 66 can be arranged in many different ways and can be formed as a single spacer around the edge of the entire formation cavity 68, or multiple spacers can be used.
  • The inside surfaces of the spacers 65, 66 further define the formation cavity 68 into which the matrix material 70 is injected. The matrix material 70 can be injected or introduced into the cavity 68 by many different methods according to the present invention. One such method comprises removing the upper section 61, injecting the material 70 into the cavity using a syringe, and replacing the upper section 61. Alternatively, the mold 50 can have an access opening through one of its rigid blocks 54, 62 or through one its spacers 65, 66 so that the matrix material 70 can be injected into the cavity without removing either the lower and upper sections 52, 61 or one of the spacers 65, 66. The matrix material 70 can be made of the same material as described in step 36 of the method 30 above and preferably comprises phosphor conversion particles of one or more different type distributed uniformly throughout a curable epoxy, silicone or other polymer.
  • After the matrix material 70 is injected into the formation cavity 68, the matrix material 70 is cured using a process dictated by the type of epoxy or silicone such as heat curing, light curing or room temperature cooling. After the curing process is complete the matrix material 70 and LEDs 55 form a sheet that can be removed from the mold's formation cavity 68 by removing one or both of the lower and upper sections 52, 61, and/or one or both of the spacers 65, 66.
  • FIG. 5 shows a sheet 72 of matrix material 70 and LEDs 55 after it is removed from the formation cavity 68 of the mold apparatus 50. The sheet can now be separated into individual coated LEDs by sawing, dicing or using a scribe and break.
  • FIG. 6 shows two coated LEDs 76 separated from the sheet 72 shown in FIG. 5. In the embodiment shown, each of the coated LEDs 76 is separated by making vertical cuts through the matrix material between adjacent LEDs 55. The matrix material can be cut in many different ways such that the layer has different thickness over the LEDs 55 or different LEDs 55 cut from the same sheets can have layers with different thicknesses. The coated LEDs 76 shown in FIG. 6 are cube shaped and the matrix material cut is preferably made at a midpoint between adjacent LEDs 55 so that the side thickness of the matrix material on each coated LED 76 is the same. In other embodiments the cut can be made off midpoint or two cuts can be made, each of which is off midpoint but closer to one of the adjacent LEDs 55 such that the side thickness of the matrix material is still the same for each LED. This type of cubed shaped arrangement is particularly applicable to LEDs that are square, although it can also be used with LEDs having angled surfaces as shown.
  • For different shaped LEDs, the matrix material can also be cut so that the matrix material layer conforms to the shape of the LED. FIGS. 7 and 8 show individually coated angled side surface coated LEDs 79 that have a layer of matrix material 80 that more closely conforms to the shape of each LED 55. Angled side surfaces are typically included to increase the LEDs light extraction. The shape of the matrix layer 80 can be obtained using different methods, with a preferred method being cutting through the matrix material to a depth 84 using a wider sawing (dicing) blade having an angled point. The remainder of the matrix material can then be cut using a standard narrow sawing (dicing) blade. The layer 80 conforms more closely to the shape of the LED such that light emitting from the LED 55 passes through substantially the same amount of matrix material. Accordingly, light emitted from the coated LED 79 is more uniform and total internal reflection is reduced. Each of the coated LEDs 79 have both contacts on the bottom, uncoated surface 86 and FIG. 8 also shows first and second conductors 88, 89 that can be used to apply a bias across the contacts, causing the LED 55 to emit light.
  • FIGS. 9 and 10 show another embodiment of a compact coating apparatus 90 according to the present invention that comprises many of the same features as the apparatus 50 shown in FIGS. 3 and 4, with the apparatus 90 used to coat square LEDs 92. The features of the apparatus 90 that are the same as those in the apparatus 50 use the same reference numerals in FIGS. 9 and 10. Accordingly, the reference numerals and many of the corresponding features are not introduced or described again in the referring to FIGS. 9 and 10.
  • Like the LEDs 55 in FIGS. 3 and 4, the square LEDs 92 are arranged on either the top surface 56 of the support block 54, or in the embodiment shown with a first film 58, on the top surface of the adhesive film 58 such that portions of the film are sandwiched between the LEDs and the support block 54. The LEDs 92 have bottom contacts 93 whose top surface is protected by the block 54 or film 58 from being covered by the matrix material. Referring to FIG. 10, a matrix material 94 can be injected into the formation cavity 68 covering the LEDs 92 and the matrix material 94 can be cured such that the LEDs 92 become embedded in the matrix material 94.
  • FIG. 11 shows the sheet 96 of LEDs 92 and matrix material 94 after being removed from the formation cavity by the methods described during the discussion of FIGS. 4 and 5 above. FIG. 12 shows the individual coated LEDs 98 after being separated from the sheet 96 using the separation methods described above, with each of the square LEDs 92 having a nearly uniform layer of matrix material 94 so that the coated LEDs 98 emit similar light.
  • FIG. 13 shows another embodiment of a mold apparatus 100 that can also be used to compact coat different semiconductor devices, but is particularly adapted to coating semiconductor devices that have a contact on their top surface. One such device is a vertical LED 102 having a first contact 103 on its bottom surface and a second contact 104 on its top surface. The apparatus 100 comprises a mold housing 101 including a lower section 106 that is similar to the lower section 54 described in FIG. 3, and comprises a bottom support block 108 and a first double sided adhesive film 110 (e.g. Gel-Pak®). Vertical LEDs 102 are arranged on the layer 110 with their first contact 103 adjacent to the layer 110.
  • The apparatus 100 also comprises an upper section 112 that is similar to the upper section 61 described in FIGS. 3 and 4, and comprises a top rigid block 114 and a second double sided adhesive film 116. However, in apparatus 100 there are no spacers. Instead, the second adhesive film 116 rests on the second contacts 104 of the LEDs 102, which maintains the appropriate distance between the lower and upper sections 106, 112 and also protects the top of the contacts 94 from being covered by the matrix material. If desired, the apparatus 100 can include side surfaces (not shown) to further define the formation cavity 119.
  • FIG. 14 shows the apparatus 100 with the matrix material 118 injected or otherwise introduced between the lower and upper sections 106, 112, that at least partially define a formation cavity 119. The matrix material 118 can then be cured using the processes described above, so that the LEDs 102 and matrix material 118 form a sheet 120. The first contact 103 of each LED 102 is protected from being covered by the matrix material 118 by the first adhesive film 110 and second contact 104 is protected from being fully covered by the matrix material by the second adhesive film 116. Accordingly, both the first and second contacts 103, 104 are available for electrical contact without further processing or etching.
  • FIG. 15 shows the sheet 120 after it has been removed from the apparatus 100. FIG. 16 shows individual coated LEDs 122 after they have been separated, with the preferred separation method being vertical cuts through the matrix material between adjacent LEDs 102 to form cube shaped devices. FIGS. 17 and 16 show LEDs 123 after being cut to match the angled sides of the LEDs 92. This can be accomplished using the two cut method described above wherein a wider saw with and angled blade is used to cut the matrix material to a first depth 124 and a standard narrower blade is used to cut through the remainder of the matrix material. FIG. 18 shows the second contact 104 available for contacting with a first conductor 128 coupled to the second contact 104. A bottom conductor 129 is coupled to the LED's first contact 103 (shown in FIG. 17). A bias applied across conductors 128 and 129 causes the coated LED 102 to emit light.
  • FIGS. 19 and 20 show another embodiment of a compact coating apparatus 130 according to the present invention that comprises many of the same features as the apparatus 100 shown in FIGS. 13 and 14, with the apparatus 130 used to coat square LEDs 132. The features of the apparatus 130 in FIGS. 19 and 20 that are the same as those in the apparatus 100 in FIGS. 13 and 14 use the same reference numerals for the same features. Accordingly, the reference numerals and many of the corresponding features are not introduced or described again in the referring to FIGS. 19 and 20.
  • Like the LEDs 102 in FIGS. 13 and 14, the square LEDs 132 have a first contact 133 and a second contact 134 and the LEDs 132 are arranged on either the top surface of the block 108, or in the embodiment shown with a first film 110, on the top surface of the adhesive film 110. Portions of the film 110 are sandwiched between the LEDs 132 and the block 108, with their first contacts 133 protected. The upper section 112 is arranged on the LEDs second contacts 134 such that they are also protected.
  • Referring to FIG. 20, a matrix material 136 can be injected or otherwise introduced into the formation cavity covering the LEDs 123 and the matrix material 136 can be cured such that the LEDs 132 become embedded in the matrix material 136.
  • FIG. 21 shows the sheet 138 of LEDs 132 and matrix material 136 after being removed from the formation cavity by the methods described in the discussion of FIGS. 4 and 5 above. FIG. 22 shows the individual coated LEDs 139 after being separated from the sheet 138 using the methods described above in the discussion of FIGS. 6, 7 and 8. Each of the square LEDs 132 has a similar layer of matrix material 136 so that the LEDs 132 emit similar light.
  • Each of the apparatus described above can include a small amount of low tack adhesive such as silicone between the LED contacts and the mold surface or film as described in the method 10 of FIG. 1. As described above, this additional layer prevents underflow and can also serve as surface protection for the contacts during heat processing steps such as curing. Silicone can then be removed by using convention cleaning processes that do not damage the LED or contacts.
  • Although the present invention has been described in considerable detail with reference to certain preferred configurations thereof, other versions are possible. Different curable materials and light conversion particles can be used. The molds can take different shapes, can have different components and the semiconductor devices can be arranged differently in the mold's formation cavity. The individual LEDs can be separated from the sheet using many different sawing or dicing methods, with the cuts being straight or angled through the matrix material. The different coating apparatus described above can be provided without an upper section and in those embodiments the matrix material should be introduced in a careful and controlled manner to provide the desired layer of matrix material. Therefore, the spirit and scope of the appended claims should not be limited to their preferred versions contained therein.

Claims (20)

We claim:
1. A light emitting diode (LED) device, comprising:
a LED at least partially embedded in a matrix material, wherein the outer surface of said matrix material comprises a plurality of planar surfaces and wherein at least one surface of said LED is uncovered by said matrix material.
2. The LED device of claim 1, wherein said matrix material comprises an encapsulant.
3. The LED device of claim 1, wherein said matrix material comprises epoxy or silicone.
4. The LED device of claim 1, wherein said matrix material comprises a conversion material.
5. The LED device of claim 1, wherein said matrix material is substantially cube-shaped.
6. The LED device of claim 1, wherein said LED is substantially square shaped.
7. The LED device of claim 1, wherein said LED has angled surfaces.
8. A light emitting diode (LED) device, comprising:
a LED comprising positive and negative terminals arranged on one surface of said LED, wherein said LED is partially covered by a substantially cube-shaped matrix material, wherein said positive and negative terminals are not covered by said matrix material.
9. The LED device of claim 8, wherein said LED is substantially square shaped.
10. The LED device of claim 8, wherein said LED has angled surfaces.
11. The LED device of claim 8, wherein said matrix material comprises an encapsulant.
12. The LED device of claim 8, wherein said matrix material comprises epoxy or silicone.
13. The LED device of claim 8, wherein said matrix material comprises a conversion material.
14. A light emitting diode (LED), comprising:
a LED comprising positive and negative terminals on the same surface of said semiconductor layers and coplanar with each other, said LED emitting light in response to an electrical signal applied to said terminals; and
a matrix material covering surfaces of said LED wherein the outer surfaces of said matrix material comprises a plurality of planar surfaces, with an exposed portion of each of said terminals being uncovered by said matrix material.
15. The LED of claim 14, wherein the outer surface of said. matrix material is substantially cube-shaped.
16. The LED of claim 14, wherein said LED is substantially square shaped.
17. The LED of claim 14, wherein said. LED has angled surfaces.
18. The LED of claim 14, wherein said matrix material comprises an encapsulant.
19. The LED of claim 14, wherein said matrix material comprises epoxy or silicone.
20. The LED of claim 14, wherein said matrix material comprises a conversion material.
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Families Citing this family (54)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7915085B2 (en) * 2003-09-18 2011-03-29 Cree, Inc. Molded chip fabrication method
TWI275189B (en) * 2003-12-30 2007-03-01 Osram Opto Semiconductors Gmbh Radiation-emitting and/or radiation-receiving semiconductor component and method for producing such component
US7355284B2 (en) 2004-03-29 2008-04-08 Cree, Inc. Semiconductor light emitting devices including flexible film having therein an optical element
US7553683B2 (en) * 2004-06-09 2009-06-30 Philips Lumiled Lighting Co., Llc Method of forming pre-fabricated wavelength converting elements for semiconductor light emitting devices
US8563339B2 (en) * 2005-08-25 2013-10-22 Cree, Inc. System for and method for closed loop electrophoretic deposition of phosphor materials on semiconductor devices
US20070045643A1 (en) * 2005-08-29 2007-03-01 Shih-Lung Liu Substrate-based white light diode
JP5308618B2 (en) * 2006-04-26 2013-10-09 日亜化学工業株式会社 Semiconductor light emitting device
DE202006007482U1 (en) * 2006-05-10 2006-07-20 Sentner, Thomas light furniture
JP2009538531A (en) * 2006-05-23 2009-11-05 クリー エル イー ディー ライティング ソリューションズ インコーポレイテッド Illumination device, and a method
CN101174058A (en) * 2006-10-30 2008-05-07 鸿富锦精密工业(深圳)有限公司;鸿海精密工业股份有限公司 Back light module unit and method for producing the same
US7521862B2 (en) * 2006-11-20 2009-04-21 Philips Lumileds Lighting Co., Llc Light emitting device including luminescent ceramic and light-scattering material
US9159888B2 (en) * 2007-01-22 2015-10-13 Cree, Inc. Wafer level phosphor coating method and devices fabricated utilizing method
US9024349B2 (en) 2007-01-22 2015-05-05 Cree, Inc. Wafer level phosphor coating method and devices fabricated utilizing method
JP5431320B2 (en) * 2007-07-17 2014-03-05 クリー インコーポレイテッドCree Inc. Optical element having internal optical function and method for manufacturing the same
WO2009074919A1 (en) * 2007-12-11 2009-06-18 Koninklijke Philips Electronics N.V. Side emitting device with hybrid top reflector
US9041285B2 (en) 2007-12-14 2015-05-26 Cree, Inc. Phosphor distribution in LED lamps using centrifugal force
US8878219B2 (en) * 2008-01-11 2014-11-04 Cree, Inc. Flip-chip phosphor coating method and devices fabricated utilizing method
DE102008010512A1 (en) * 2008-02-22 2009-08-27 Osram Opto Semiconductors Gmbh Optoelectronic component, particularly light emitting diode or photodiode, has semiconductor chip with chip lower side, and two electrical bondings with contact lower sides
US8236582B2 (en) * 2008-07-24 2012-08-07 Philips Lumileds Lighting Company, Llc Controlling edge emission in package-free LED die
US10147843B2 (en) 2008-07-24 2018-12-04 Lumileds Llc Semiconductor light emitting device including a window layer and a light-directing structure
CN102165611B (en) * 2008-09-25 2014-04-23 皇家飞利浦电子股份有限公司 Coated light emitting device and method for coating thereof
US8075165B2 (en) * 2008-10-14 2011-12-13 Ledengin, Inc. Total internal reflection lens and mechanical retention and locating device
US8507300B2 (en) * 2008-12-24 2013-08-13 Ledengin, Inc. Light-emitting diode with light-conversion layer
TWI381556B (en) * 2009-03-20 2013-01-01 Everlight Electronics Co Ltd Light emitting diode package structure and manufacturing method thereof
US7985000B2 (en) * 2009-04-08 2011-07-26 Ledengin, Inc. Lighting apparatus having multiple light-emitting diodes with individual light-conversion layers
US20100279437A1 (en) * 2009-05-01 2010-11-04 Koninklijke Philips Electronics N.V. Controlling edge emission in package-free led die
DE102009035100A1 (en) * 2009-07-29 2011-02-03 Osram Opto Semiconductors Gmbh LED and conversion element for a light emitting diode
TWI385782B (en) * 2009-09-10 2013-02-11 Lextar Electronics Corp White light illuminating device
JP5468349B2 (en) * 2009-10-22 2014-04-09 シチズンホールディングス株式会社 Manufacturing method of LED light source device
US8303141B2 (en) * 2009-12-17 2012-11-06 Ledengin, Inc. Total internal reflection lens with integrated lamp cover
US9373606B2 (en) * 2010-08-30 2016-06-21 Bridgelux, Inc. Light-emitting device array with individual cells
US8937324B2 (en) * 2010-08-30 2015-01-20 Bridgelux, Inc. Light-emitting device array with individual cells
US9515229B2 (en) * 2010-09-21 2016-12-06 Cree, Inc. Semiconductor light emitting devices with optical coatings and methods of making same
CN102487110A (en) * 2010-12-03 2012-06-06 展晶科技(深圳)有限公司 Light-emitting diode (LED) packaging method
KR101725220B1 (en) 2010-12-22 2017-04-10 삼성전자 주식회사 Method of depositing phosphor on semiconductor light emitting device and an apparatus for depositing phosphor on semiconductor light emitting device
KR101897308B1 (en) * 2011-01-17 2018-09-10 루미리즈 홀딩 비.브이. A method for producing a light emitting device and a structure comprising the same
US9166126B2 (en) * 2011-01-31 2015-10-20 Cree, Inc. Conformally coated light emitting devices and methods for providing the same
US8513900B2 (en) 2011-05-12 2013-08-20 Ledengin, Inc. Apparatus for tuning of emitter with multiple LEDs to a single color bin
DE102011102590A1 (en) * 2011-05-27 2012-11-29 Osram Opto Semiconductors Gmbh A method of producing light emitting devices
KR101330592B1 (en) * 2011-06-07 2013-11-18 도레이 카부시키가이샤 Resin sheet laminated body, method for producing same, and method for producing led chip with phosphor-containing resin sheet using same
KR20130083207A (en) * 2012-01-12 2013-07-22 삼성전자주식회사 Method of forming phosphor layer on light emitting device chip wafer using wafer lavel mold
EP2804925B1 (en) * 2012-01-19 2016-12-28 Nanoco Technologies Ltd Molded nanoparticle phosphor for light emitting applications
US9343383B2 (en) * 2012-03-02 2016-05-17 Cree, Inc. High voltage semiconductor devices including electric arc suppression material and methods of forming the same
US9897284B2 (en) 2012-03-28 2018-02-20 Ledengin, Inc. LED-based MR16 replacement lamp
US8921994B2 (en) 2012-09-14 2014-12-30 Freescale Semiconductor, Inc. Thermally enhanced package with lid heat spreader
US9159643B2 (en) * 2012-09-14 2015-10-13 Freescale Semiconductor, Inc. Matrix lid heatspreader for flip chip package
KR101968637B1 (en) * 2012-12-07 2019-04-12 삼성전자주식회사 Flexible semiconductor device and method of manufacturing the same
US9530943B2 (en) 2015-02-27 2016-12-27 Ledengin, Inc. LED emitter packages with high CRI
CN106328008B (en) * 2015-06-30 2019-03-22 光宝光电(常州)有限公司 Colloid is filled to the preparation method of shell, the digital display of light emitting diode and preparation method
DE102015114849A1 (en) * 2015-09-04 2017-03-09 Osram Opto Semiconductors Gmbh Method for producing light-emitting diode filaments and light-emitting filament
KR20180062971A (en) * 2016-10-10 2018-06-11 선전 구딕스 테크놀로지 컴퍼니, 리미티드 Chip packaging structure and chip packaging method
US10219345B2 (en) 2016-11-10 2019-02-26 Ledengin, Inc. Tunable LED emitter with continuous spectrum
CN106449945B (en) * 2016-12-07 2019-03-26 湘能华磊光电股份有限公司 Make the method for injection molding of CSP chip
US10170304B1 (en) 2017-10-25 2019-01-01 Globalfoundries Inc. Self-aligned nanotube structures

Family Cites Families (361)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US257737A (en) * 1882-05-09 Gate-holder
US468832A (en) * 1892-02-16 Corn-harvester
US66861A (en) * 1867-07-16 Impeoyed lasd-eqllee and marieb
US566639A (en) * 1896-08-25 werner
US333522A (en) * 1886-01-05 Feanklin e
US720259A (en) * 1902-07-29 1903-02-10 Christopher Kuenzel Stem winding and setting watch.
US813753A (en) * 1905-05-24 1906-02-27 Sieber & Trussell Mnfg Co Loose-leaf binder.
US959316A (en) * 1908-01-02 1910-05-24 Edmund Dawes Spinning and twisting machine.
US924233A (en) * 1908-06-16 1909-06-08 Aage Jensen Apparatus for heating and cooling liquids.
US3780357A (en) 1973-02-16 1973-12-18 Hewlett Packard Co Electroluminescent semiconductor display apparatus and method of fabricating the same
NL162469C (en) * 1975-01-23 1980-05-16 Schelde Nv A method for the welding of a pipe to a pipe plate.
JPS6148951B2 (en) 1977-12-09 1986-10-27 Tokyo Shibaura Electric Co
JPS5927559Y2 (en) 1979-06-08 1984-08-09
JPS5927559B2 (en) 1980-05-14 1984-07-06 Murata Manufacturing Co
JPS5752072A (en) * 1980-09-16 1982-03-27 Tokyo Shibaura Electric Co Display unit
US4527179A (en) * 1981-02-09 1985-07-02 Semiconductor Energy Laboratory Co., Ltd. Non-single-crystal light emitting semiconductor device
JPH0261821B2 (en) 1982-08-27 1990-12-21 Tokyo Shibaura Electric Co
US4587729A (en) * 1982-09-17 1986-05-13 The Gillette Company Safety razor
US4576796A (en) * 1984-01-18 1986-03-18 Pelam, Inc. Centrifugal tissue processor
JPS6148951A (en) 1984-08-16 1986-03-10 Toshiba Corp Semiconductor device
JPS6148951U (en) 1984-08-29 1986-04-02
US4853010A (en) * 1984-09-12 1989-08-01 Spence Billy F Multi stage gas scrubber
US4733335A (en) * 1984-12-28 1988-03-22 Koito Manufacturing Co., Ltd. Vehicular lamp
JPS6227559A (en) 1985-07-29 1987-02-05 Hitachi Cable Ltd Manufacture of hot dip tin coated copper wire
US4866005A (en) 1987-10-26 1989-09-12 North Carolina State University Sublimation of silicon carbide to produce large, device quality single crystals of silicon carbide
US4935665A (en) * 1987-12-24 1990-06-19 Mitsubishi Cable Industries Ltd. Light emitting diode lamp
DE68916070T2 (en) 1988-03-16 1994-10-13 Mitsubishi Rayon Co Phosphor paste compositions and thus obtained coatings.
JPH0261821A (en) 1988-08-25 1990-03-01 Victor Co Of Japan Ltd Magnetic recording medium
JP2558840B2 (en) * 1988-09-22 1996-11-27 関西日本電気株式会社 Mold diode and its manufacturing method
JPH065290Y2 (en) 1988-10-28 1994-02-09 日立造船エンジニアリング株式会社 Work information reading apparatus
US5027168A (en) 1988-12-14 1991-06-25 Cree Research, Inc. Blue light emitting diode formed in silicon carbide
US4918497A (en) 1988-12-14 1990-04-17 Cree Research, Inc. Blue light emitting diode formed in silicon carbide
US4966862A (en) 1989-08-28 1990-10-30 Cree Research, Inc. Method of production of light emitting diodes
US4946547A (en) 1989-10-13 1990-08-07 Cree Research, Inc. Method of preparing silicon carbide surfaces for crystal growth
US5210051A (en) 1990-03-27 1993-05-11 Cree Research, Inc. High efficiency light emitting diodes from bipolar gallium nitride
FR2666147B1 (en) 1990-08-27 1992-10-16 Inst Francais Du Petrole Measuring the distribution of concentrations of constituents of a sytem centrifugation by transmission / reception of mechanical signals.
US5200022A (en) 1990-10-03 1993-04-06 Cree Research, Inc. Method of improving mechanically prepared substrate surfaces of alpha silicon carbide for deposition of beta silicon carbide thereon and resulting product
FR2704690B1 (en) 1993-04-27 1995-06-23 Thomson Csf A method of encapsulating semiconductor chips, device obtained by this method and application to the interconnection of pellets in three dimensions.
US5414342A (en) * 1993-04-29 1995-05-09 Unitrode Corporation Voltage mode pulse width modulation controller
US5416342A (en) 1993-06-23 1995-05-16 Cree Research, Inc. Blue light-emitting diode with high external quantum efficiency
US5338944A (en) 1993-09-22 1994-08-16 Cree Research, Inc. Blue light-emitting diode with degenerate junction structure
US5393993A (en) 1993-12-13 1995-02-28 Cree Research, Inc. Buffer structure between silicon carbide and gallium nitride and resulting semiconductor devices
US5604135A (en) 1994-08-12 1997-02-18 Cree Research, Inc. Method of forming green light emitting diode in silicon carbide
US5523589A (en) 1994-09-20 1996-06-04 Cree Research, Inc. Vertical geometry light emitting diode with group III nitride active layer and extended lifetime
US5631190A (en) 1994-10-07 1997-05-20 Cree Research, Inc. Method for producing high efficiency light-emitting diodes and resulting diode structures
DE19509262C2 (en) 1995-03-15 2001-11-29 Siemens Ag A semiconductor device with plastic wrap and process for its preparation
US5614131A (en) * 1995-05-01 1997-03-25 Motorola, Inc. Method of making an optoelectronic device
US5739554A (en) 1995-05-08 1998-04-14 Cree Research, Inc. Double heterojunction light emitting diode with gallium nitride active layer
US6056421A (en) * 1995-08-25 2000-05-02 Michael Brian Johnson Architectural lighting devices with photosensitive lens
US5766987A (en) * 1995-09-22 1998-06-16 Tessera, Inc. Microelectronic encapsulation methods and equipment
DE19536438A1 (en) * 1995-09-29 1997-04-03 Siemens Ag Semiconductor device and manufacturing method
TW412744B (en) * 1996-02-13 2000-11-21 Dainippon Printing Co Ltd Device with display portion capable of rewriting
JP2947156B2 (en) 1996-02-29 1999-09-13 双葉電子工業株式会社 Manufacturing method of the phosphor
US5926359A (en) * 1996-04-01 1999-07-20 International Business Machines Corporation Metal-insulator-metal capacitor
US6001671A (en) * 1996-04-18 1999-12-14 Tessera, Inc. Methods for manufacturing a semiconductor package having a sacrificial layer
JP3350354B2 (en) 1996-06-03 2002-11-25 松下電器産業株式会社 Monochrome cathode-ray tube phosphor screen forming method
US5803579A (en) * 1996-06-13 1998-09-08 Gentex Corporation Illuminator assembly incorporating light emitting diodes
DE29724543U1 (en) 1996-06-26 2002-02-28 Osram Opto Semiconductors Gmbh Light emitting semiconductor component having luminescence
JP3751587B2 (en) * 1996-07-12 2006-03-01 富士通オートメーション株式会社 A method of manufacturing a semiconductor device
TW383508B (en) * 1996-07-29 2000-03-01 Nichia Kagaku Kogyo Kk Light emitting device and display
DE19638667C2 (en) 1996-09-20 2001-05-17 Osram Opto Semiconductors Gmbh Mixed-color light-emitting semiconductor component having luminescence
JP3065258B2 (en) 1996-09-30 2000-07-17 日亜化学工業株式会社 Emitting device and display device using the same
JPH10150223A (en) * 1996-11-15 1998-06-02 Rohm Co Ltd Chip-type light emitting device
JP3448441B2 (en) 1996-11-29 2003-09-22 三洋電機株式会社 The light-emitting device
US5833903A (en) * 1996-12-10 1998-11-10 Great American Gumball Corporation Injection molding encapsulation for an electronic device directly onto a substrate
JP3492178B2 (en) 1997-01-15 2004-02-03 株式会社東芝 The semiconductor light emitting device and manufacturing method thereof
US6274890B1 (en) 1997-01-15 2001-08-14 Kabushiki Kaisha Toshiba Semiconductor light emitting device and its manufacturing method
CN1300859C (en) 1997-01-31 2007-02-14 松下电器产业株式会社 The light emitting element
US6583444B2 (en) 1997-02-18 2003-06-24 Tessera, Inc. Semiconductor packages having light-sensitive chips
JP3246386B2 (en) 1997-03-05 2002-01-15 日亜化学工業株式会社 Color conversion mold member for light-emitting diodes and light emitting diodes
JP3351706B2 (en) 1997-05-14 2002-12-03 株式会社東芝 Semiconductor device and manufacturing method thereof
US5813753A (en) * 1997-05-27 1998-09-29 Philips Electronics North America Corporation UV/blue led-phosphor device with efficient conversion of UV/blues light to visible light
FR2764111A1 (en) 1997-06-03 1998-12-04 Sgs Thomson Microelectronics Process for manufacturing semiconductor packages comprising an integrated circuit
JP3617587B2 (en) 1997-07-17 2005-02-09 日亜化学工業株式会社 Emitting diode and a method of forming
US6340824B1 (en) 1997-09-01 2002-01-22 Kabushiki Kaisha Toshiba Semiconductor light emitting device including a fluorescent material
JPH1187778A (en) 1997-09-02 1999-03-30 Toshiba Corp Semiconductor light emitting element, semiconductor light emitting device and manufacture thereof
CN2310925Y (en) 1997-09-26 1999-03-17 陈兴 Structure of light emitting diode
US6201262B1 (en) 1997-10-07 2001-03-13 Cree, Inc. Group III nitride photonic devices on silicon carbide substrates with conductive buffer interlay structure
US6350704B1 (en) * 1997-10-14 2002-02-26 Micron Technology Inc. Porous silicon oxycarbide integrated circuit insulator
US6495083B2 (en) * 1997-10-29 2002-12-17 Hestia Technologies, Inc. Method of underfilling an integrated circuit chip
TW408497B (en) * 1997-11-25 2000-10-11 Matsushita Electric Works Ltd LED illuminating apparatus
EP1928034A3 (en) 1997-12-15 2008-06-18 Philips Lumileds Lighting Company LLC Light emitting device
US7538086B2 (en) * 1998-09-01 2009-05-26 Genentech, Inc. PRO1303 polypeptides
US6252254B1 (en) 1998-02-06 2001-06-26 General Electric Company Light emitting device with phosphor composition
US6580097B1 (en) * 1998-02-06 2003-06-17 General Electric Company Light emitting device with phosphor composition
JPH11276932A (en) 1998-03-30 1999-10-12 Japan Tobacco Inc Centrifugal separator
US6329224B1 (en) * 1998-04-28 2001-12-11 Tessera, Inc. Encapsulation of microelectronic assemblies
US6504180B1 (en) * 1998-07-28 2003-01-07 Imec Vzw And Vrije Universiteit Method of manufacturing surface textured high-efficiency radiating devices and devices obtained therefrom
JP2000053532A (en) * 1998-08-04 2000-02-22 Shiseido Co Ltd Beatifying
US5959316A (en) * 1998-09-01 1999-09-28 Hewlett-Packard Company Multiple encapsulation of phosphor-LED devices
JP3724620B2 (en) 1998-09-29 2005-12-07 シャープ株式会社 Method of manufacturing a light emitting diode
US6404125B1 (en) * 1998-10-21 2002-06-11 Sarnoff Corporation Method and apparatus for performing wavelength-conversion using phosphors with light emitting diodes
US6366018B1 (en) * 1998-10-21 2002-04-02 Sarnoff Corporation Apparatus for performing wavelength-conversion using phosphors with light emitting diodes
US5988925A (en) * 1998-10-26 1999-11-23 Baggett; R. Sherman Stacked paper fastener
US6184465B1 (en) * 1998-11-12 2001-02-06 Micron Technology, Inc. Semiconductor package
US6307218B1 (en) 1998-11-20 2001-10-23 Lumileds Lighting, U.S., Llc Electrode structures for light emitting devices
JP3775081B2 (en) 1998-11-27 2006-05-17 松下電器産業株式会社 Semiconductor light-emitting device
US6429583B1 (en) * 1998-11-30 2002-08-06 General Electric Company Light emitting device with ba2mgsi2o7:eu2+, ba2sio4:eu2+, or (srxcay ba1-x-y)(a1zga1-z)2sr:eu2+phosphors
US6339304B1 (en) * 1998-12-18 2002-01-15 Graco Children's Products Inc. Swing control for altering power to drive motor after each swing cycle
JP2000208822A (en) * 1999-01-11 2000-07-28 Matsushita Electronics Industry Corp Semiconductor light-emitting device
JP4256968B2 (en) 1999-01-14 2009-04-22 スタンレー電気株式会社 Method of manufacturing a light emitting diode
JP3033576B1 (en) 1999-02-18 2000-04-17 日本電気株式会社 The method of manufacturing a semiconductor device and a semiconductor device
JP3494586B2 (en) 1999-03-26 2004-02-09 アピックヤマダ株式会社 Resin sealing apparatus and a resin sealing method
WO2000059036A1 (en) 1999-03-26 2000-10-05 Hitachi, Ltd. Semiconductor module and method of mounting
US6784541B2 (en) * 2000-01-27 2004-08-31 Hitachi, Ltd. Semiconductor module and mounting method for same
JP2000299334A (en) * 1999-04-14 2000-10-24 Apic Yamada Corp Resin-sealing apparatus
DE19918370B4 (en) 1999-04-22 2006-06-08 Osram Opto Semiconductors Gmbh LED white light source with lens
US6257737B1 (en) 1999-05-20 2001-07-10 Philips Electronics Na Low-profile luminaire having a reflector for mixing light from a multi-color linear array of LEDs
JP3337000B2 (en) 1999-06-07 2002-10-21 サンケン電気株式会社 Semiconductor light-emitting device
EP1059667A3 (en) 1999-06-09 2007-07-04 Sanyo Electric Co., Ltd. Hybrid integrated circuit device
JP3675234B2 (en) * 1999-06-28 2005-07-27 豊田合成株式会社 The method of manufacturing a semiconductor light emitting element
US6274690B1 (en) 1999-08-11 2001-08-14 Shin-Etsu Chemical Co., Ltd. Preparation of vinyl chloride polymer
JP2001064937A (en) 1999-08-31 2001-03-13 Daika Sangyo Kk Gabion work for civil engineering work, protection work using the same, and filling method for filler
US6696703B2 (en) 1999-09-27 2004-02-24 Lumileds Lighting U.S., Llc Thin film phosphor-converted light emitting diode device
US6338813B1 (en) 1999-10-15 2002-01-15 Advanced Semiconductor Engineering, Inc. Molding method for BGA semiconductor chip package
KR20010044907A (en) 1999-11-01 2001-06-05 김순택 Phosphor screen representing high brightness in a low voltage and manufacturing method thereof
DE19955747A1 (en) 1999-11-19 2001-05-23 Osram Opto Semiconductors Gmbh Optical semiconductor device with multiple quantum well structure, e.g. LED, has alternate well layers and barrier layers forming super-lattices
US6410942B1 (en) * 1999-12-03 2002-06-25 Cree Lighting Company Enhanced light extraction through the use of micro-LED arrays
US6406991B2 (en) 1999-12-27 2002-06-18 Hoya Corporation Method of manufacturing a contact element and a multi-layered wiring substrate, and wafer batch contact board
DE19964252A1 (en) 1999-12-30 2002-06-06 Osram Opto Semiconductors Gmbh Surface mount device for an LED white light source
US6541367B1 (en) * 2000-01-18 2003-04-01 Applied Materials, Inc. Very low dielectric constant plasma-enhanced CVD films
DE10010638A1 (en) 2000-03-03 2001-09-13 Osram Opto Semiconductors Gmbh Making light emitting semiconducting body with luminescence conversion element involves applying suspension with solvent, adhesive, luminescent material
US6793371B2 (en) * 2000-03-09 2004-09-21 Mongo Light Co. Inc. LED lamp assembly
US6522065B1 (en) 2000-03-27 2003-02-18 General Electric Company Single phosphor for creating white light with high luminosity and high CRI in a UV led device
TWI295075B (en) 2000-03-31 2008-03-21 Toyoda Gosei Kk
JP4810746B2 (en) 2000-03-31 2011-11-09 豊田合成株式会社 Group III nitride compound semiconductor device
US6653765B1 (en) 2000-04-17 2003-11-25 General Electric Company Uniform angular light distribution from LEDs
JP4403631B2 (en) 2000-04-24 2010-01-27 ソニー株式会社 The method of manufacturing the chip-like electronic component, and manufacturing method of a pseudo wafer used in the manufacture
JP2003532298A (en) 2000-04-26 2003-10-28 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング Light-emitting semiconductor element
JP2001319928A (en) * 2000-05-08 2001-11-16 Hitachi Ltd Semiconductor integrated circuit device and manufacturing method therefor
US6621211B1 (en) 2000-05-15 2003-09-16 General Electric Company White light emitting phosphor blends for LED devices
US6501100B1 (en) 2000-05-15 2002-12-31 General Electric Company White light emitting phosphor blend for LED devices
GB0013394D0 (en) * 2000-06-01 2000-07-26 Microemissive Displays Ltd A method of creating a color optoelectronic device
JP2002009097A (en) 2000-06-22 2002-01-11 Oki Electric Ind Co Ltd Semiconductor device and method of manufacturing the same
JP2002018293A (en) 2000-07-06 2002-01-22 Nippon Steel Chem Co Ltd Cation exchange resin
DE10033502A1 (en) * 2000-07-10 2002-01-31 Osram Opto Semiconductors Gmbh An optoelectronic module, process for its preparation and its use
US6468832B1 (en) * 2000-07-19 2002-10-22 National Semiconductor Corporation Method to encapsulate bumped integrated circuit to create chip scale package
JP3589187B2 (en) 2000-07-31 2004-11-17 日亜化学工業株式会社 Forming a light emitting device METHOD
US20020033486A1 (en) * 2000-08-04 2002-03-21 Samsung Electronics Co., Ltd. Method for forming an interconnection line using a hydrosilsesquioxane (HSQ) layer as an interlayer insulating layer
JP2002050799A (en) 2000-08-04 2002-02-15 Stanley Electric Co Ltd Led lamp and manufacturing method therefor
US20020024299A1 (en) * 2000-08-09 2002-02-28 Tadahiro Okazaki Chip-type light-emitting device
US6537912B1 (en) * 2000-08-25 2003-03-25 Micron Technology Inc. Method of forming an encapsulated conductive pillar
JP2002076196A (en) * 2000-08-25 2002-03-15 Nec Kansai Ltd Chip type semiconductor device and its manufacturing method
CA2419275A1 (en) 2000-08-31 2002-03-07 Basf Aktiengesellschaft Butinol i esterase
US6614103B1 (en) * 2000-09-01 2003-09-02 General Electric Company Plastic packaging of LED arrays
JP2002076445A (en) 2000-09-01 2002-03-15 Sanken Electric Co Ltd Semiconductor light emitting device
JP2002093830A (en) * 2000-09-14 2002-03-29 Sony Corp Manufacturing method of chip-like electronic component, and manufacturing method of pseudo-wafer used for the manufacturing method
JP2002101147A (en) 2000-09-26 2002-04-05 Hitachi Kokusai Electric Inc Communication system
US6833604B2 (en) * 2000-10-03 2004-12-21 Broadcom Corporation High density metal capacitor using dual-damascene copper interconnect
US6650044B1 (en) 2000-10-13 2003-11-18 Lumileds Lighting U.S., Llc Stenciling phosphor layers on light emitting diodes
DE10051242A1 (en) 2000-10-17 2002-04-25 Philips Corp Intellectual Pty A light emitting device with a coated phosphor
US6889088B2 (en) * 2000-11-20 2005-05-03 Bassem M. Demian Bunion treating device
US20020063520A1 (en) 2000-11-29 2002-05-30 Huei-Che Yu Pre-formed fluorescent plate - LED device
JP3614776B2 (en) 2000-12-19 2005-01-26 シャープ株式会社 Chip-type led and a manufacturing method thereof
JP5110744B2 (en) * 2000-12-21 2012-12-26 フィリップス ルミレッズ ライティング カンパニー リミテッド ライアビリティ カンパニー Light emitting device and manufacturing method thereof
JP2002208822A (en) 2000-12-28 2002-07-26 Tamura Seisakusho Co Ltd Electronic circuit and sound output device
TW516247B (en) 2001-02-26 2003-01-01 Arima Optoelectronics Corp Light emitting diode with light conversion using scattering optical media
AUPR245601A0 (en) * 2001-01-10 2001-02-01 Silverbrook Research Pty Ltd An apparatus (WSM09)
JP2002280607A (en) 2001-01-10 2002-09-27 Toyoda Gosei Co Ltd Light emitting device
US6734571B2 (en) 2001-01-23 2004-05-11 Micron Technology, Inc. Semiconductor assembly encapsulation mold
MY131962A (en) 2001-01-24 2007-09-28 Nichia Corp Light emitting diode, optical semiconductor device, epoxy resin composition suited for optical semiconductor device, and method for manufacturing the same
US6891200B2 (en) 2001-01-25 2005-05-10 Matsushita Electric Industrial Co., Ltd. Light-emitting unit, light-emitting unit assembly, and lighting apparatus produced using a plurality of light-emitting units
US6791119B2 (en) 2001-02-01 2004-09-14 Cree, Inc. Light emitting diodes including modifications for light extraction
JP4081985B2 (en) 2001-03-02 2008-04-30 日亜化学工業株式会社 Emitting device and manufacturing method thereof
US6661167B2 (en) 2001-03-14 2003-12-09 Gelcore Llc LED devices
US20020132471A1 (en) * 2001-03-16 2002-09-19 International Business Machines Corporation High modulus film structure for enhanced electromigration resistance
US6486059B2 (en) * 2001-04-19 2002-11-26 Silicon Intergrated Systems Corp. Dual damascene process using an oxide liner for a dielectric barrier layer
JP2002319704A (en) 2001-04-23 2002-10-31 Matsushita Electric Works Ltd Led chip
AT551731T (en) 2001-04-23 2012-04-15 Panasonic Corp A light emitting device with a light emitting diode chip
US6686676B2 (en) 2001-04-30 2004-02-03 General Electric Company UV reflectors and UV-based light sources having reduced UV radiation leakage incorporating the same
US6531358B1 (en) * 2001-05-09 2003-03-11 Taiwan Semiconductor Manufacturing Company Method of fabricating capacitor-under-bit line (CUB) DRAM
US6861347B2 (en) * 2001-05-17 2005-03-01 Samsung Electronics Co., Ltd. Method for forming metal wiring layer of semiconductor device
US6958497B2 (en) 2001-05-30 2005-10-25 Cree, Inc. Group III nitride based light emitting diode structures with a quantum well and superlattice, group III nitride based quantum well structures and group III nitride based superlattice structures
US6642652B2 (en) * 2001-06-11 2003-11-04 Lumileds Lighting U.S., Llc Phosphor-converted light emitting device
US6576488B2 (en) 2001-06-11 2003-06-10 Lumileds Lighting U.S., Llc Using electrophoresis to produce a conformally coated phosphor-converted light emitting semiconductor
JP4114331B2 (en) 2001-06-15 2008-07-09 豊田合成株式会社 The light-emitting device
WO2002103814A1 (en) 2001-06-15 2002-12-27 Cree, Inc. Gan based led formed on a sic substrate
WO2003001859A1 (en) * 2001-06-20 2003-01-03 Heatron, Inc. Method and device for testing electronic devices
JP4010299B2 (en) 2001-06-20 2007-11-21 日亜化学工業株式会社 The semiconductor light emitting device and a method of forming the
JP4529319B2 (en) 2001-06-27 2010-08-25 日亜化学工業株式会社 Semiconductor chip and a method of manufacturing the same
JPWO2003002661A1 (en) * 2001-06-28 2004-10-21 東レ株式会社 Epoxy resin composition excellent in weathering resistance and a fiber reinforced composite material
DE10131698A1 (en) * 2001-06-29 2003-01-30 Osram Opto Semiconductors Gmbh Surface mount radiation-emitting component and process for its preparation
US20030008490A1 (en) * 2001-07-09 2003-01-09 Guoqiang Xing Dual hardmask process for the formation of copper/low-k interconnects
US6696222B2 (en) * 2001-07-24 2004-02-24 Silicon Integrated Systems Corp. Dual damascene process using metal hard mask
JP4147755B2 (en) 2001-07-31 2008-09-10 日亜化学工業株式会社 Emitting device and manufacturing method thereof
TW511303B (en) 2001-08-21 2002-11-21 Wen-Jr He A light mixing layer and method
JPWO2003021668A1 (en) * 2001-08-31 2004-12-24 日立化成工業株式会社 Wiring board, a semiconductor device and a method for their preparation
US7150816B2 (en) 2001-08-31 2006-12-19 Semitool, Inc. Apparatus and method for deposition of an electrophoretic emulsion
JP3749243B2 (en) 2001-09-03 2006-02-22 松下電器産業株式会社 The semiconductor light emitting device, method of manufacturing the light emitting device and a semiconductor light emitting device
JP2006080565A (en) 2001-09-03 2006-03-23 Matsushita Electric Ind Co Ltd Method of manufacturing semiconductor light emitting device
US6759266B1 (en) * 2001-09-04 2004-07-06 Amkor Technology, Inc. Quick sealing glass-lidded package fabrication method
JP3925137B2 (en) 2001-10-03 2007-06-06 日亜化学工業株式会社 Method for manufacturing a light emitting device
TW517356B (en) * 2001-10-09 2003-01-11 Delta Optoelectronics Inc Package structure of display device and its packaging method
JP3948650B2 (en) 2001-10-09 2007-07-25 アバゴ・テクノロジーズ・イーシービーユー・アイピー(シンガポール)プライベート・リミテッド Light emitting diode and a manufacturing method thereof
US6531328B1 (en) * 2001-10-11 2003-03-11 Solidlite Corporation Packaging of light-emitting diode
WO2003034508A1 (en) 2001-10-12 2003-04-24 Nichia Corporation Light emitting device and method for manufacture thereof
AT324387T (en) 2001-11-27 2006-05-15 Basell Poliolefine Srl Transparent and flexible polypropenzusammensetzungen
JP4055405B2 (en) * 2001-12-03 2008-03-05 ソニー株式会社 Electronic components and a method of manufacturing the same
US7009220B2 (en) 2001-12-03 2006-03-07 Sony Corporation Transferring semiconductor crystal from a substrate to a resin
JP2003170465A (en) * 2001-12-04 2003-06-17 Matsushita Electric Ind Co Ltd Method for manufacturing semiconductor package and sealing mold therefor
US7066335B2 (en) * 2001-12-19 2006-06-27 Pretech As Apparatus for receiving and distributing cash
EP1461979B1 (en) 2002-01-07 2008-12-31 Paten Treuhand Gesellschaft für Elektrische Glühlampen MBH. Lamp
TW518775B (en) * 2002-01-29 2003-01-21 Chi-Hsing Hsu Immersion cooling type light emitting diode and its packaging method
JP2003234511A (en) 2002-02-06 2003-08-22 Toshiba Corp Semiconductor light-emitting device and manufacturing method thereof
US6924514B2 (en) 2002-02-19 2005-08-02 Nichia Corporation Light-emitting device and process for producing thereof
JP4269709B2 (en) 2002-02-19 2009-05-27 日亜化学工業株式会社 Emitting device and manufacturing method thereof
JP3801931B2 (en) * 2002-03-05 2006-07-26 ローム株式会社 Structure and manufacturing method of the light-emitting device using a Led chip
JP3972183B2 (en) * 2002-03-07 2007-09-05 セイコーエプソン株式会社 Semiconductor device and manufacturing method thereof, the circuit board and electronic equipment
US6756186B2 (en) 2002-03-22 2004-06-29 Lumileds Lighting U.S., Llc Producing self-aligned and self-exposed photoresist patterns on light emitting devices
US20030189215A1 (en) 2002-04-09 2003-10-09 Jong-Lam Lee Method of fabricating vertical structure leds
KR100697803B1 (en) 2002-08-29 2007-03-20 나이트라이드 세마이컨덕터스 코포레이션, 리미티드 Light-emitting device having light-emitting elements
US6949389B2 (en) * 2002-05-02 2005-09-27 Osram Opto Semiconductors Gmbh Encapsulation for organic light emitting diodes devices
JP2004014841A (en) * 2002-06-07 2004-01-15 Fujitsu Ltd Semiconductor device and its manufacturing method
US6841802B2 (en) 2002-06-26 2005-01-11 Oriol, Inc. Thin film light emitting diode
JP2004031856A (en) 2002-06-28 2004-01-29 Sumitomo Electric Ind Ltd ZnSe-BASED LIGHT EMITTING DEVICE AND ITS MANUFACTURING METHOD
KR101030068B1 (en) 2002-07-08 2011-04-19 니치아 카가쿠 고교 가부시키가이샤 Method of Manufacturing Nitride Semiconductor Device and Nitride Semiconductor Device
DE10237084A1 (en) * 2002-08-05 2004-02-19 Osram Opto Semiconductors Gmbh Electrically conductive frame with a semiconductor light diode, to illuminate a mobile telephone keypad, has a layered structure with the electrical connections and an encapsulated diode chip in very small dimensions
KR20040017926A (en) 2002-08-22 2004-03-02 웬-치 호 Light-mixing layer and method
JP2004083653A (en) 2002-08-23 2004-03-18 Shigeo Fujita Light emitting device, phosphor and method for producing the same
US20040038442A1 (en) * 2002-08-26 2004-02-26 Kinsman Larry D. Optically interactive device packages and methods of assembly
JP2004095765A (en) 2002-08-30 2004-03-25 Nichia Chem Ind Ltd Light emitting device and method for manufacturing the same
US7078737B2 (en) * 2002-09-02 2006-07-18 Matsushita Electric Industrial Co., Ltd. Light-emitting device
US7264378B2 (en) 2002-09-04 2007-09-04 Cree, Inc. Power surface mount light emitting die package
EP1540747B1 (en) 2002-09-19 2012-01-25 Cree, Inc. Phosphor-coated light emitting diodes including tapered sidewalls, and fabrication methods therefor
JP2004134699A (en) 2002-10-15 2004-04-30 Sanken Electric Co Ltd Light emitting device
EP1556904B1 (en) * 2002-10-30 2018-12-05 OSRAM Opto Semiconductors GmbH Method for producing a light source provided with electroluminescent diodes and comprising a luminescence conversion element
JP4072632B2 (en) 2002-11-29 2008-04-09 独立行政法人物質・材料研究機構 Emitting device and a light-emitting METHOD
JP4292794B2 (en) 2002-12-04 2009-07-08 日亜化学工業株式会社 Emitting device, chromaticity adjustment method of the manufacturing method and a light-emitting device of the light emitting device
DE10258193B4 (en) 2002-12-12 2014-04-10 Osram Opto Semiconductors Gmbh Method for producing light-emitting diode light sources with luminescence conversion element
US6917057B2 (en) 2002-12-31 2005-07-12 Gelcore Llc Layered phosphor coatings for LED devices
JP4411841B2 (en) 2003-01-10 2010-02-10 三菱化学株式会社 Emitting device and a lighting device and a display using the same
JP3858829B2 (en) 2003-02-06 2006-12-20 日亜化学工業株式会社 Method of forming a light emitting diode
US7042020B2 (en) 2003-02-14 2006-05-09 Cree, Inc. Light emitting device incorporating a luminescent material
JP4254266B2 (en) 2003-02-20 2009-04-15 豊田合成株式会社 Method of manufacturing a light emitting device and a light-emitting device
US7423296B2 (en) * 2003-02-26 2008-09-09 Avago Technologies Ecbu Ip Pte Ltd Apparatus for producing a spectrally-shifted light output from a light emitting device utilizing thin-film luminescent layers
JP4131178B2 (en) 2003-02-28 2008-08-13 豊田合成株式会社 The light-emitting device
JP3900093B2 (en) * 2003-03-11 2007-04-04 日立電線株式会社 Method of manufacturing a mold and a semiconductor device using the same
US7038370B2 (en) 2003-03-17 2006-05-02 Lumileds Lighting, U.S., Llc Phosphor converted light emitting device
JP4550386B2 (en) 2003-03-27 2010-09-22 三菱電機株式会社 Package for an optical semiconductor element
US7176501B2 (en) 2003-05-12 2007-02-13 Luxpia Co, Ltd Tb,B-based yellow phosphor, its preparation method, and white semiconductor light emitting device incorporating the same
JP2004363380A (en) * 2003-06-05 2004-12-24 Kanto Sanyo Semiconductors Co Ltd Optical semiconductor device and its fabricating process
JP4415572B2 (en) 2003-06-05 2010-02-17 日亜化学工業株式会社 The semiconductor light emitting device and a manufacturing method thereof
JP3813599B2 (en) * 2003-06-13 2006-08-23 ローム株式会社 Method of manufacturing a light emitting diode element emitting white light
US7075225B2 (en) 2003-06-27 2006-07-11 Tajul Arosh Baroky White light emitting device
US6921929B2 (en) 2003-06-27 2005-07-26 Lockheed Martin Corporation Light-emitting diode (LED) with amorphous fluoropolymer encapsulant and lens
JP4034241B2 (en) 2003-06-27 2008-01-16 日本ライツ株式会社 Manufacturing method of the light source device and a light source device
US7200009B2 (en) * 2003-07-01 2007-04-03 Nokia Corporation Integrated electromechanical arrangement and method of production
US20080106893A1 (en) 2004-07-02 2008-05-08 S. C. Johnson & Son, Inc. Lamp and bulb for illumination and ambiance lighting
JP4503950B2 (en) 2003-07-11 2010-07-14 スタンレー電気株式会社 Manufacturing method of the phosphor integrated led lamp
US7391153B2 (en) 2003-07-17 2008-06-24 Toyoda Gosei Co., Ltd. Light emitting device provided with a submount assembly for improved thermal dissipation
JP4277617B2 (en) 2003-08-08 2009-06-10 日立電線株式会社 The method of manufacturing a semiconductor light emitting element
EP1658642B1 (en) 2003-08-28 2014-02-26 Panasonic Corporation Semiconductor light emitting device, light emitting module, lighting apparatus, display element and manufacturing method of semiconductor light emitting device
US7183587B2 (en) 2003-09-09 2007-02-27 Cree, Inc. Solid metal block mounting substrates for semiconductor light emitting devices
US7029935B2 (en) 2003-09-09 2006-04-18 Cree, Inc. Transmissive optical elements including transparent plastic shell having a phosphor dispersed therein, and methods of fabricating same
US7915085B2 (en) 2003-09-18 2011-03-29 Cree, Inc. Molded chip fabrication method
CN100442551C (en) 2003-09-30 2008-12-10 株式会社东芝;东芝高新材料公司 Light emitting device
JP4303550B2 (en) 2003-09-30 2009-07-29 豊田合成株式会社 The light-emitting device
CN1863828A (en) * 2003-10-08 2006-11-15 艾利丹尼森公司 Sound damping adhesive
KR100587328B1 (en) 2003-10-16 2006-06-08 엘지전자 주식회사 Light Emitting Diode a front optical source
KR101127314B1 (en) * 2003-11-19 2012-03-29 니치아 카가쿠 고교 가부시키가이샤 Semiconductor device
JP2005167079A (en) 2003-12-04 2005-06-23 Toyoda Gosei Co Ltd Light emitting device
CN1317775C (en) 2003-12-10 2007-05-23 玄基光电半导体股份有限公司 Packaging structure of LED and packaging method thereof
JP2005197369A (en) 2004-01-05 2005-07-21 Toshiba Corp Optical semiconductor device
JP4231417B2 (en) 2004-01-07 2009-02-25 パナソニック株式会社 Substrate processing apparatus and cleaning method
JP2005252222A (en) 2004-02-03 2005-09-15 Matsushita Electric Ind Co Ltd Semiconductor light-emitting device, lighting module, lighting device, display device, and method of manufacturing semiconductor light-emitting device
JP4357311B2 (en) 2004-02-04 2009-11-04 シチズン電子株式会社 Light-emitting diode chip
US7246923B2 (en) 2004-02-11 2007-07-24 3M Innovative Properties Company Reshaping light source modules and illumination systems using the same
TWI280265B (en) 2004-02-18 2007-05-01 Showa Denko Kk Phosphor, production method thereof and light-emitting device using the phosphor
US7569863B2 (en) * 2004-02-19 2009-08-04 Panasonic Corporation Semiconductor light emitting device
US7250715B2 (en) 2004-02-23 2007-07-31 Philips Lumileds Lighting Company, Llc Wavelength converted semiconductor light emitting devices
US6924233B1 (en) 2004-03-19 2005-08-02 Agilent Technologies, Inc. Phosphor deposition methods
JP4516337B2 (en) 2004-03-25 2010-08-04 シチズン電子株式会社 Semiconductor light-emitting device
KR100486177B1 (en) 2004-03-25 2005-04-21 에피밸리 주식회사 Ⅲ-Nitride Compound Semiconductor Light Emitting Device
US20050211991A1 (en) 2004-03-26 2005-09-29 Kyocera Corporation Light-emitting apparatus and illuminating apparatus
WO2005094318A2 (en) 2004-03-29 2005-10-13 Jmar Research, Inc. Morphology and spectroscopy of nanoscale regions using x-rays generated by laser produced plasma
US7517728B2 (en) 2004-03-31 2009-04-14 Cree, Inc. Semiconductor light emitting devices including a luminescent conversion element
US20060007207A1 (en) 2004-04-01 2006-01-12 Toshiba Matsushita Display Technology Co., Ltd. Liquid crystal display device and method of driving liquid crystal display device
US7419912B2 (en) 2004-04-01 2008-09-02 Cree, Inc. Laser patterning of light emitting devices
US20050280894A1 (en) 2004-04-02 2005-12-22 David Hartkop Apparatus for creating a scanning-column backlight in a scanning aperture display device
US7868343B2 (en) 2004-04-06 2011-01-11 Cree, Inc. Light-emitting devices having multiple encapsulation layers with at least one of the encapsulation layers including nanoparticles and methods of forming the same
CN1942997B (en) 2004-04-15 2011-03-23 皇家飞利浦电子股份有限公司 Electrically controllable color conversion cell
KR20070058380A (en) 2004-04-23 2007-06-08 라이트 프리스크립션즈 이노베이터즈, 엘엘씨 Optical manifold for light-emitting diodes
KR100900372B1 (en) 2004-04-27 2009-06-02 파나소닉 주식회사 Phosphor composition and method for producing the same, and light-emitting device using the same
JP4471729B2 (en) 2004-04-30 2010-06-02 シチズン電子株式会社 Liquid crystal lens with the light emitting device
TWI241034B (en) 2004-05-20 2005-10-01 Lighthouse Technology Co Ltd Light emitting diode package
EP1601030B1 (en) 2004-05-24 2019-04-03 OSRAM OLED GmbH Light-emitting electronic component
US7278760B2 (en) 2004-05-24 2007-10-09 Osram Opto Semiconductor Gmbh Light-emitting electronic component
WO2005116521A1 (en) 2004-05-28 2005-12-08 Tir Systems Ltd. Luminance enhancement apparatus and method
WO2005121641A1 (en) 2004-06-11 2005-12-22 Koninklijke Philips Electronics N.V. Illumination system
DE102004031603B4 (en) * 2004-06-30 2008-04-17 Eads Deutschland Gmbh A method of forming of signal spectra and circuit for carrying out the method
US7534633B2 (en) 2004-07-02 2009-05-19 Cree, Inc. LED with substrate modifications for enhanced light extraction and method of making same
US7271420B2 (en) 2004-07-07 2007-09-18 Cao Group, Inc. Monolitholic LED chip to emit multiple colors
JP4932144B2 (en) 2004-07-12 2012-05-16 株式会社朝日ラバー LED lamp
JP2006049533A (en) 2004-08-04 2006-02-16 Wacker Asahikasei Silicone Co Ltd Resin sealing light emitting diode device and sealing method
JP4747726B2 (en) 2004-09-09 2011-08-17 豊田合成株式会社 Light emitting device
JP3802911B2 (en) 2004-09-13 2006-08-02 ローム株式会社 Semiconductor light-emitting device
US7217583B2 (en) 2004-09-21 2007-05-15 Cree, Inc. Methods of coating semiconductor light emitting elements by evaporating solvent from a suspension
US8174037B2 (en) 2004-09-22 2012-05-08 Cree, Inc. High efficiency group III nitride LED with lenticular surface
US8513686B2 (en) 2004-09-22 2013-08-20 Cree, Inc. High output small area group III nitride LEDs
US7259402B2 (en) 2004-09-22 2007-08-21 Cree, Inc. High efficiency group III nitride-silicon carbide light emitting diode
US7737459B2 (en) 2004-09-22 2010-06-15 Cree, Inc. High output group III nitride light emitting diodes
US7372198B2 (en) 2004-09-23 2008-05-13 Cree, Inc. Semiconductor light emitting devices including patternable films comprising transparent silicone and phosphor
JP4756841B2 (en) 2004-09-29 2011-08-24 スタンレー電気株式会社 Manufacturing method of semiconductor light emitting device
DE102004060358A1 (en) 2004-09-30 2006-04-13 Osram Opto Semiconductors Gmbh A method of manufacturing of LED chips and LED chip
JP2006114637A (en) 2004-10-13 2006-04-27 Toshiba Corp Semiconductor light-emitting device
US8134292B2 (en) 2004-10-29 2012-03-13 Ledengin, Inc. Light emitting device with a thermal insulating and refractive index matching material
JP4802533B2 (en) 2004-11-12 2011-10-26 日亜化学工業株式会社 Semiconductor device
JP2006165416A (en) 2004-12-10 2006-06-22 Stanley Electric Co Ltd White-color displaying device, and manufacturing method thereof
US7671529B2 (en) 2004-12-10 2010-03-02 Philips Lumileds Lighting Company, Llc Phosphor converted light emitting device
KR100646093B1 (en) 2004-12-17 2006-11-15 엘지이노텍 주식회사 Light emitting device package
US8288942B2 (en) 2004-12-28 2012-10-16 Cree, Inc. High efficacy white LED
KR100638666B1 (en) * 2005-01-03 2006-10-30 삼성전기주식회사 Nitride based semiconductor light emitting device
US7195944B2 (en) 2005-01-11 2007-03-27 Semileds Corporation Systems and methods for producing white-light emitting diodes
US7221044B2 (en) 2005-01-21 2007-05-22 Ac Led Lighting, L.L.C. Heterogeneous integrated high voltage DC/AC light emitter
US7932111B2 (en) 2005-02-23 2011-04-26 Cree, Inc. Substrate removal process for high light extraction LEDs
JP2006245020A (en) 2005-02-28 2006-09-14 Sharp Corp Light emitting diode element and manufacturing method thereof
JP4601464B2 (en) 2005-03-10 2010-12-22 株式会社沖データ Semiconductor device, the print head, and an image forming apparatus using the same
US7341878B2 (en) 2005-03-14 2008-03-11 Philips Lumileds Lighting Company, Llc Wavelength-converted semiconductor light emitting device
JP4961799B2 (en) 2005-04-08 2012-06-27 日亜化学工業株式会社 Light emitting device having a silicone resin layer formed by screen printing
KR101047683B1 (en) 2005-05-17 2011-07-08 엘지이노텍 주식회사 Light emitting device packaging method that does not require wire bonding
US8669572B2 (en) 2005-06-10 2014-03-11 Cree, Inc. Power lamp package
KR100665219B1 (en) 2005-07-14 2007-01-09 삼성전기주식회사 Wavelengt-converted light emitting diode package
JP2007063538A (en) 2005-08-03 2007-03-15 Shin Etsu Chem Co Ltd Addition curing-type silicone resin composition for light emitting diode
US7365371B2 (en) 2005-08-04 2008-04-29 Cree, Inc. Packages for semiconductor light emitting devices utilizing dispensed encapsulants
US8563339B2 (en) * 2005-08-25 2013-10-22 Cree, Inc. System for and method for closed loop electrophoretic deposition of phosphor materials on semiconductor devices
JP2007087973A (en) 2005-09-16 2007-04-05 Rohm Co Ltd Manufacture of nitride semiconductor device, method for manufacturing nitride semiconductor device, and nitride semiconductor light-emitting device obtained by the same
DE102005062514A1 (en) 2005-09-28 2007-03-29 Osram Opto Semiconductors Gmbh Multi-purpose light emitting diode incorporates selective wavelength trap
JP5127455B2 (en) 2005-09-29 2013-01-23 株式会社東芝 White light emitting device and method for manufacturing the same, backlight using the same, and liquid crystal display device
US7391558B2 (en) * 2005-10-19 2008-06-24 Raytheon Company Laser amplifier power extraction enhancement system and method
US20070092636A1 (en) 2005-10-24 2007-04-26 3M Innovative Properties Company Method of making light emitting device having a molded encapsulant
US7344952B2 (en) 2005-10-28 2008-03-18 Philips Lumileds Lighting Company, Llc Laminating encapsulant film containing phosphor over LEDs
US7564070B2 (en) * 2005-11-23 2009-07-21 Visteon Global Technologies, Inc. Light emitting diode device having a shield and/or filter
DE102005058127A1 (en) 2005-11-30 2007-06-06 Schefenacker Vision Systems Germany Gmbh Vehicle lamp e.g. motor vehicle rear lamp, has translucent mediums that are nontransparent in radiating direction of light which is transmitted from illuminants in translucent manner and in opposite direction of light
KR100732849B1 (en) * 2005-12-21 2007-06-20 삼성에스디아이 주식회사 Organic light emitting display device
JP4828226B2 (en) 2005-12-28 2011-11-30 新光電気工業株式会社 Light emitting device and manufacturing method thereof
KR100723247B1 (en) 2006-01-10 2007-05-22 삼성전기주식회사 Chip coating type light emitting diode package and fabrication method thereof
CN101370907A (en) 2006-01-16 2009-02-18 皇家飞利浦电子股份有限公司 Light emitting device with a Eu-comprising phosphor material
KR200412776Y1 (en) 2006-01-19 2006-03-31 주식회사 닥터코리아 Cotton for Bedclothes Containing Wormwood
US7682850B2 (en) 2006-03-17 2010-03-23 Philips Lumileds Lighting Company, Llc White LED for backlight with phosphor plates
KR200417926Y1 (en) 2006-03-21 2006-06-02 황성민 a boundary stone for No entering
WO2007107903A1 (en) 2006-03-23 2007-09-27 Koninklijke Philips Electronics N.V. Led-based lighting device with colour control
US20070269586A1 (en) 2006-05-17 2007-11-22 3M Innovative Properties Company Method of making light emitting device with silicon-containing composition
TWI308401B (en) 2006-07-04 2009-04-01 Epistar Corp High efficient phosphor-converted light emitting diode
JP5178714B2 (en) 2006-07-06 2013-04-10 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ Lighting device package
KR200429313Y1 (en) 2006-08-03 2006-10-20 (주)에코청진 A revetment block for staircase type
JP2008129043A (en) 2006-11-16 2008-06-05 Toyoda Gosei Co Ltd Led light emission display device
EP1935452A1 (en) 2006-12-19 2008-06-25 Philips Electronics N.V. Electrochromic device and photodynamic treatment device comprising such an electrochromic device
US8704254B2 (en) 2006-12-22 2014-04-22 Philips Lumileds Lighting Company, Llc Light emitting device including a filter
US9024349B2 (en) * 2007-01-22 2015-05-05 Cree, Inc. Wafer level phosphor coating method and devices fabricated utilizing method
US8232564B2 (en) 2007-01-22 2012-07-31 Cree, Inc. Wafer level phosphor coating technique for warm light emitting diodes
JP2008218511A (en) 2007-02-28 2008-09-18 Toyoda Gosei Co Ltd Semiconductor light emitting device and method formanufacturing the same
DE102007022090A1 (en) 2007-05-11 2008-11-13 Osram Opto Semiconductors Gmbh Light emitting component for lamp, has light source e.g. organic LED, emitting electromagnetic radiation of specific wavelength range, and adjustable transparent element arranged between light source and conversion unit
US7588351B2 (en) * 2007-09-27 2009-09-15 Osram Sylvania Inc. LED lamp with heat sink optic
US7915627B2 (en) * 2007-10-17 2011-03-29 Intematix Corporation Light emitting device with phosphor wavelength conversion
US8382339B2 (en) 2007-11-09 2013-02-26 Koninklijke Philips Electronics N.V. Light output device
US20100328925A1 (en) 2008-01-22 2010-12-30 Koninklijke Philips Electronics N.V. Illumination device with led and a transmissive support comprising a luminescent material
JP5279329B2 (en) 2008-04-24 2013-09-04 パナソニック株式会社 Light-emitting unit with lens
US20090268461A1 (en) 2008-04-28 2009-10-29 Deak David G Photon energy conversion structure
US8159131B2 (en) 2008-06-30 2012-04-17 Bridgelux, Inc. Light emitting device having a transparent thermally conductive layer
CN102159881B (en) 2008-09-23 2014-08-13 皇家飞利浦电子股份有限公司 Lighting device with thermally variable reflecting element
US20120043886A1 (en) * 2010-08-18 2012-02-23 Hua Ji Integrated Heat Conductive Light Emitting Diode (LED) White Light Source Module

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